JP2000317761A - Electrostatic chuck and attracting method - Google Patents
Electrostatic chuck and attracting methodInfo
- Publication number
- JP2000317761A JP2000317761A JP11142322A JP14232299A JP2000317761A JP 2000317761 A JP2000317761 A JP 2000317761A JP 11142322 A JP11142322 A JP 11142322A JP 14232299 A JP14232299 A JP 14232299A JP 2000317761 A JP2000317761 A JP 2000317761A
- Authority
- JP
- Japan
- Prior art keywords
- electrostatic chuck
- processed
- gas
- internal electrode
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はプラズマＣＶＤ等の
半導体製造装置に使用される静電チャックならびに、静
電チャックによる絶縁体の処理方法に関するものであ
る。[0001] 1. Field of the Invention [0002] The present invention relates to an electrostatic chuck used in a semiconductor manufacturing apparatus such as a plasma CVD, and a method of treating an insulator by the electrostatic chuck.
【０００２】[0002]
【従来の技術】半導体製造装置において、静電チャック
に求められる性能として最も重要なものは、被処理体の
処理中の温度を所定の温度に保つことである。しかし例
えばプラズマに曝された際の被処理体への入射熱エネル
ギー、目標処理温度などは装置毎に異なるため、静電チ
ャックに求められる加熱、冷却性能も各種装置により異
なる。2. Description of the Related Art In a semiconductor manufacturing apparatus, the most important performance required for an electrostatic chuck is to maintain a temperature during processing of an object to be processed at a predetermined temperature. However, for example, the thermal energy incident on the object to be processed when exposed to plasma, the target processing temperature, and the like differ from one apparatus to another, so that the heating and cooling performance required for the electrostatic chuck also differs among various apparatuses.
【０００３】このため、従来は静電チャックが取り付け
られた金属のプレート内に流路を設け、該流路内に加
熱、冷却の媒体となる流体を流し、該流体を所定の温度
に制御することで被処理体の温度を所定の温度に保つ方
法が一般的に行われている。For this reason, conventionally, a flow path is provided in a metal plate to which an electrostatic chuck is attached, a fluid serving as a medium for heating and cooling is flowed in the flow path, and the fluid is controlled to a predetermined temperature. Thus, a method of keeping the temperature of the object to be processed at a predetermined temperature is generally performed.
【０００４】また真空中における絶縁体の処理に関して
は、静電チャックは絶縁体の吸着が困難であるため使わ
れていない。[0004] Regarding the treatment of an insulator in a vacuum, an electrostatic chuck is not used because it is difficult to adsorb the insulator.
【０００５】[0005]
【発明が解決しようとする課題】金属プレート内を流れ
る流体の最適温度は、「被処理体の目標処理温度」、
「処理中の被処理体へ入射する熱エネルギー」、「被処
理体と静電チャック間の伝熱特性」を正確に知る必要が
ある。しかしながら、これまでは、最後にあげた「被処
理体と静電チャック間の伝熱特性」が未知の項目であっ
たため、上記流体の温度を変化させ、それに応じて処理
性能がどのように変化するかを繰り返し実験にて確認
し、流体の最適温度を決定していた。即ち、装置の使用
条件の中でも重要な項目である上記流体の温度を決定す
るには、かなりのコストと時間をかけて実験を行う必要
があった。The optimum temperature of the fluid flowing in the metal plate is "target processing temperature of the object to be processed",
It is necessary to accurately know "thermal energy incident on the object to be processed during processing" and "heat transfer characteristics between the object to be processed and the electrostatic chuck". However, until now, the last item, “The heat transfer characteristic between the object to be processed and the electrostatic chuck” was an unknown item, so the temperature of the fluid was changed and the processing performance changed accordingly. It was repeatedly confirmed through experiments that the optimum temperature of the fluid was determined. That is, in order to determine the temperature of the fluid, which is an important item in the use conditions of the apparatus, it was necessary to perform an experiment with considerable cost and time.
【０００６】そして、静電チャックで吸着する被処理体
においてはシリコンウェハなどの半導体に限られ、ガラ
ス基板などの絶縁体には向かなかった。The object to be processed which is attracted by the electrostatic chuck is limited to a semiconductor such as a silicon wafer, and is not suitable for an insulator such as a glass substrate.
【０００７】本発明は、上記課題を解決するためになさ
れたもので、本発明の目的は、目標の処理温度と被処理
体への入射熱量、そしてあらかじめ仮設定された金属プ
レート内の流体温度に応じて静電チャックの最適設計を
行うことで、装置使用条件を求めるための実験に要する
コスト、期間を大幅に短縮することが可能な静電チャッ
クを提供すること、および該静電チャックを用いて絶縁
体を吸着し加熱、冷却処理する方法を提供することであ
る。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a target processing temperature, an amount of heat incident on an object to be processed, and a fluid temperature in a metal plate temporarily set in advance. By providing an optimal design of the electrostatic chuck in accordance with the above, to provide an electrostatic chuck capable of significantly reducing the cost and period required for experiments to determine the conditions of use of the device, and It is to provide a method of adsorbing an insulator, heating and cooling using the same.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
に請求項１は、誘電体中に内部電極を有し、該内部電極
に電圧を印可することで被処理体との間に吸着力を発生
させ、被処理体の吸着、保持を行う静電チャックにおい
て、静電チャックの吸着面に溝と、凸状のドットと、外
周シールリングを有することを特徴とする。被処理体を
静電チャックに吸着させた際に、被処理体と静電チャッ
クの間に隙間空間であるガス封入部ができる。静電チャ
ックの吸着面に溝と、凸状のドットを有することにより
封入されたガスの圧力は、素早く均一になる。また、静
電チャックの吸着面の外周シールリングにより、封入さ
れたガスが外部に漏れることのない静電チャックが提供
できる。In order to achieve the above object, a first aspect of the present invention has an internal electrode in a dielectric, and a voltage is applied to the internal electrode so that an attractive force is applied between the internal electrode and the object to be processed. The electrostatic chuck for generating and holding the object to be processed is characterized by having a groove, a convex dot, and an outer peripheral seal ring on the suction surface of the electrostatic chuck. When the object to be processed is attracted to the electrostatic chuck, a gas filling portion, which is a gap space, is formed between the object to be processed and the electrostatic chuck. By having the grooves and the convex dots on the suction surface of the electrostatic chuck, the pressure of the enclosed gas quickly becomes uniform. Further, an electrostatic chuck in which the sealed gas does not leak outside can be provided by the outer peripheral seal ring on the suction surface of the electrostatic chuck.
【０００９】また、封入されたガスの熱伝達率はその圧
力により変化し、かつ熱伝達率と圧力の関係は定量的に
求められているため、被処理体に入射する熱エネルギ
ー、被処理体の目標処理温度、金属プレートを流れる流
体の温度に応じたガス圧力の調整により自在に被処理体
の温度を変化させることができる。Further, since the heat transfer coefficient of the sealed gas changes depending on the pressure, and the relationship between the heat transfer coefficient and the pressure is quantitatively determined, the heat energy incident on the object to be processed and the heat By adjusting the gas pressure according to the target processing temperature and the temperature of the fluid flowing through the metal plate, the temperature of the object to be processed can be freely changed.
【００１０】このとき、ガスの熱伝達が圧力に比例させ
るには、請求項２に示したようにガスの圧力が低圧で分
子流の領域である必要がある。例えば封入するガスとし
てヘリウムを使用し、その圧力を０〜２０Torrの範囲で
可変としたい場合は、ドットの高さを２５μｍにすれば
よい。At this time, in order for the heat transfer of the gas to be proportional to the pressure, it is necessary that the pressure of the gas is low and in a molecular flow region. For example, when helium is used as the gas to be sealed and the pressure is desired to be variable in the range of 0 to 20 Torr, the height of the dots may be 25 μm.
【００１１】また、被処理体と静電チャックとの間の熱
流は、封入ガスを通じる流れの他に固体接触部分を通じ
ての流れももちろん存在する。後者による伝熱特性は、
静電チャックの素材の熱伝導率、静電チャックの被処理
体との接触部分の表面粗さ、静電チャックの吸着力によ
り決まる。これらを要素実験により求めておくことで、
固体接触部分の伝熱特性を定量的に算出することが可能
となり、請求項３に示したように固体接触部の表面粗さ
を最適化した設計を行うことができる。Further, the heat flow between the object to be processed and the electrostatic chuck includes, of course, a flow through the solid contact portion in addition to a flow through the sealing gas. The heat transfer characteristics of the latter are
It is determined by the thermal conductivity of the material of the electrostatic chuck, the surface roughness of the contact portion of the electrostatic chuck with the workpiece, and the attraction force of the electrostatic chuck. By obtaining these through elementary experiments,
The heat transfer characteristic of the solid contact portion can be calculated quantitatively, and a design can be performed in which the surface roughness of the solid contact portion is optimized as described in claim 3.
【００１２】請求項４では、以上のように被処理体の温
度を決定する封入ガスの伝熱特性と、固体接触部の伝熱
特性の両方が定量的に求められたため、後は処理温度に
応じて、両者の面積比を決定することで、最適な被処理
体と静電チャック間の伝熱特性を得ることができる。被
処理体と静電チャック間の伝熱性能は、両者の間に封入
されるガスの圧力を変化させることによって調整可能で
あるが、その調整可能範囲は上記面積比によって決定さ
れる。このことは次の実施例において詳しく説明する。In the fourth aspect, since both the heat transfer characteristics of the sealed gas for determining the temperature of the object to be processed and the heat transfer characteristics of the solid contact portion are determined quantitatively as described above, the processing temperature is thereafter set to a lower value. Accordingly, by determining the area ratio between the two, an optimal heat transfer characteristic between the object to be processed and the electrostatic chuck can be obtained. The heat transfer performance between the object to be processed and the electrostatic chuck can be adjusted by changing the pressure of the gas sealed between them, and the adjustable range is determined by the area ratio. This will be described in detail in the following examples.
【００１３】被処理体への入射熱量が比較的大きく、か
つ被処理体の目標処理温度が比較的低い場合には固体接
触による冷却部分を増やす必要があるが、上記温度調整
可能範囲が大きくできること、また被処理体の物理的な
接触による汚染を軽減できることから、被処理体と静電
チャックの固体接触部はできるだけ小さい方が望まし
い。このため請求項５では、理想的な接触面積比率を５
％よりも小さいこととした。When the amount of heat incident on the object to be processed is relatively large and the target processing temperature of the object to be processed is relatively low, it is necessary to increase the cooling portion due to solid contact, but the above temperature adjustable range can be increased. In addition, the solid contact portion between the object to be processed and the electrostatic chuck is desirably as small as possible because contamination due to physical contact of the object to be processed can be reduced. Therefore, in claim 5, the ideal contact area ratio is 5
%.
【００１４】被処理体が絶縁体である場合、そのままで
は静電チャックによる吸着は困難であるため、請求項７
は、絶縁体の被吸着面に導電性薄膜を設け吸着可能とな
したことを特徴とする。導電性薄膜は絶縁体に比べて抵
抗率が小さいため、被吸着面に導電性薄膜を設けること
で被処理体を静電チャックで吸着することが可能とな
る。したがって、被処理体が半導体である場合と同様に
加熱、冷却処理を行うことができる。In the case where the object to be processed is an insulator, it is difficult for the object to be chucked by the electrostatic chuck as it is.
Is characterized in that a conductive thin film is provided on a surface to be adsorbed of an insulator so that it can be adsorbed. Since the conductive thin film has a lower resistivity than the insulator, providing the conductive thin film on the surface to be attracted allows the object to be treated to be attracted by the electrostatic chuck. Therefore, heating and cooling can be performed in the same manner as when the object to be processed is a semiconductor.
【００１５】[0015]
【発明の実施の形態】図１は本発明に係る静電チャック
の一例を示す平面図であり、図２はその断面図である。FIG. 1 is a plan view showing an example of an electrostatic chuck according to the present invention, and FIG. 2 is a sectional view thereof.
【００１６】図３は静電チャック１に被処理体１０を吸
着した状態を示す断面図である。同図において電圧印可
用導線１２を通じて内部電極７に電圧を印可すること
で、被処理体１０と静電チャック１との間に吸着力を発
生させ、ドット２及び外周シールリング３（以下、まと
めて固体接触部と記す）において被処理体１０を吸着す
る。また静電チャック１は接合部１１を通じて金属プレ
ート６と接合されており、金属プレート６内部に設けら
れた冷媒流路８に冷媒を流すことで静電チャック１の冷
却を行う。FIG. 3 is a sectional view showing a state in which the object to be processed 10 is attracted to the electrostatic chuck 1. In the figure, by applying a voltage to the internal electrode 7 through the voltage application lead wire 12, an attraction force is generated between the object to be processed 10 and the electrostatic chuck 1, and the dot 2 and the outer peripheral seal ring 3 (hereinafter collectively referred to as a collective). The object to be processed 10 is adsorbed at the solid contact portion. Further, the electrostatic chuck 1 is joined to the metal plate 6 through the joining portion 11, and cools the electrostatic chuck 1 by flowing a coolant through a coolant channel 8 provided inside the metal plate 6.
【００１７】ガス供給配管１３を通じてガス供給口５か
らガスが供給され、ガス封入部９に封入される。このと
きにガスを素早く均一に封入するために静電チャック１
の表面に溝４が設けられている。このガス封入部９及び
固体接触部を通じて被処理体１０と静電チャック１の間
の熱伝達が行われる。A gas is supplied from a gas supply port 5 through a gas supply pipe 13 and sealed in a gas sealing section 9. At this time, an electrostatic chuck 1 is used to quickly and uniformly fill the gas.
The groove 4 is provided on the surface of the. Heat transfer between the object to be processed 10 and the electrostatic chuck 1 is performed through the gas sealing portion 9 and the solid contact portion.
【００１８】図４は絶縁体である被処理体の一例を示す
断面図である。被処理体１０の被吸着面には導電性薄膜
１６が付いている。FIG. 4 is a cross-sectional view showing an example of an object to be processed which is an insulator. A conductive thin film 16 is provided on the surface of the object 10 to be adsorbed.
【００１９】図５〜図８は、本発明に係る静電チャック
の各種熱特性の実験データを示すグラフであり、各グラ
フの説明を以下に示す。被処理体１０は、シリコンウェ
ハを用いた。FIGS. 5 to 8 are graphs showing experimental data of various thermal characteristics of the electrostatic chuck according to the present invention, and the description of each graph is shown below. The object to be processed 10 was a silicon wafer.
【００２０】図５は、被処理体１０と静電チャック１と
の間に封入されたガスの圧力と、被処理体１０の温度の
関係を示すグラフであり、図６は上記ガスの圧力とガス
の熱伝達率を示すグラフである。図５及び図６に示した
実験に用いた静電チャック１のドット２の高さは２５μ
ｍであり、先に示したとおり、この空間内で分子流領域
となる０〜２０Torrの領域においてはガスの圧力とガス
の熱伝達率が正比例していることがわかる。このため、
この圧力範囲においてはガス圧によるウェハ温度の調節
を容易に行うことが可能となる。FIG. 5 is a graph showing the relationship between the pressure of the gas sealed between the object 10 and the electrostatic chuck 1 and the temperature of the object 10, and FIG. It is a graph which shows the heat transfer coefficient of gas. The height of the dot 2 of the electrostatic chuck 1 used in the experiment shown in FIGS.
m, and as described above, it can be seen that the pressure of the gas and the heat transfer coefficient of the gas are directly proportional in the region of 0 to 20 Torr which is the molecular flow region in this space. For this reason,
In this pressure range, the wafer temperature can be easily adjusted by the gas pressure.
【００２１】より高い圧力まで分子流領域とするために
は、ドット２の高さを低く設定する必要がある。例えば
上記ガスにおいて０〜１００Torrまで分子流領域とする
にはドット２の高さを５μｍ以下にすればよい。したが
って、分子流領域とする圧力の下限を０で、上限を２０
Torr〜１００Torrの間に設定したい場合には、ドット２
の高さを５μｍ〜２５μｍの範囲で、設定したい上限圧
力に合わせて高さを決定すればよい。また、圧力の上限
を１００Torrより大きい値に設定したい場合は、ドット
２の高さを５μｍ未満で、設定したい圧力に合わせて高
さを決定すればよい。In order to make the molecular flow region up to a higher pressure, the height of the dots 2 must be set low. For example, in order to set the molecular flow region from 0 to 100 Torr in the above gas, the height of the dots 2 may be set to 5 μm or less. Therefore, the lower limit of the pressure in the molecular flow region is 0, and the upper limit is 20.
If you want to set between Torr and 100 Torr, use dot 2
The height may be determined in the range of 5 μm to 25 μm according to the upper limit pressure to be set. If it is desired to set the upper limit of the pressure to a value larger than 100 Torr, the height of the dot 2 may be less than 5 μm and the height may be determined according to the desired pressure.
【００２２】このとき上記ガスを素早く均一に封入する
ためにドット２と同時に溝４の形成が重要となる。静電
チャック表面に凸状のドットのみが設けられた場合は、
ドットの高さによっては隙間空間内の圧力が均一になる
までに時間がかかる。そこでガス供給口から溝を掘るこ
とによって隙間空間内の圧力が均一になるまでの時間を
低減させている。溝の形状、パターンはガス供給口から
放射状であり巾１ｍｍ以上、深さは５０μｍ以上で効果
を奏する。好ましくは巾１．５ｍｍ以上、深さ２５０μ
ｍ以上でありこの場合隙間の圧力分布が均一になるまで
５秒以下となる。溝のパターンは放射状と同心円状を組
み合わせることにより更に効果が増加する。At this time, it is important to form the grooves 4 simultaneously with the dots 2 in order to quickly and uniformly fill the gas. When only convex dots are provided on the surface of the electrostatic chuck,
Depending on the height of the dot, it takes time until the pressure in the gap space becomes uniform. Therefore, by digging a groove from the gas supply port, the time until the pressure in the gap space becomes uniform is reduced. The shape and pattern of the groove are radial from the gas supply port, and are effective when the width is 1 mm or more and the depth is 50 μm or more. Preferably 1.5 mm or more in width and 250 μ in depth
m or more, and in this case, 5 seconds or less until the pressure distribution in the gap becomes uniform. The effect of the groove pattern is further increased by combining the radial pattern and the concentric pattern.
【００２３】図７は静電チャック１の印可電圧すなわち
吸着力を変化させ、被処理体１０の温度がどう変化する
かを示したグラフである。印可電圧を高く、即ち吸着力
を増加させると、静電チャック１と被処理体１０との固
体接触部における熱伝導率が大きくなるため、被処理体
１０は冷却され温度が小さくなる様子が示されている。
また、静電チャックの表面粗さを粗くすると、上記熱伝
導率が小さくなり、結果被処理体の温度が高くなる様子
が示されている。図７に示された実験結果により、固体
接触部の熱伝導率の振舞いが明らかになるため、図５、
図６の結果によって明らかになるガスの熱伝達特性との
組み合わせにより、求められる熱特性に応じた静電チャ
ック１の形状設計を行うことが可能となる。FIG. 7 is a graph showing how the temperature of the object 10 changes by changing the applied voltage of the electrostatic chuck 1, that is, the attraction force. When the applied voltage is increased, that is, when the suction force is increased, the thermal conductivity at the solid contact portion between the electrostatic chuck 1 and the object to be processed 10 increases, so that the object to be processed 10 is cooled and the temperature is reduced. Have been.
In addition, it is shown that when the surface roughness of the electrostatic chuck is increased, the thermal conductivity decreases, and as a result, the temperature of the object increases. The behavior of the thermal conductivity at the solid contact is clarified by the experimental results shown in FIG.
The shape design of the electrostatic chuck 1 according to the required thermal characteristics can be performed by the combination with the heat transfer characteristics of the gas which becomes clear from the results of FIG.
【００２４】固体接触部とガス封入部９の面積の比率が
変化することは、図６において圧力が０の時の熱伝達率
が変化即ち同図の切片が変化することに等しい。例えば
面積比率を小さく即ち固体接触部を小さくすると、ガス
の圧力が０のときの熱伝導は小さく即ち切片の値が小さ
くなるため、図６に示したグラフは下に平行移動するこ
ととなる。このことは、先述のとおり被処理体１０と静
電チャック１間の熱伝達特性がガスの圧力によって調整
可能だが、その調整可能範囲も静電チャック１の形状に
より自由に設定可能となることを示している。A change in the ratio of the area of the solid contact portion to the area of the gas filling portion 9 is equivalent to a change in the heat transfer coefficient when the pressure is 0 in FIG. 6, that is, a change in the intercept in FIG. For example, when the area ratio is made small, that is, the solid contact portion is made small, the heat conduction when the gas pressure is 0 becomes small, that is, the value of the intercept becomes small, so that the graph shown in FIG. This means that the heat transfer characteristic between the object to be processed 10 and the electrostatic chuck 1 can be adjusted by the gas pressure as described above, but the adjustable range can also be freely set by the shape of the electrostatic chuck 1. Is shown.
【００２５】印可電圧を変化させると被処理体１０の温
度を変化させられる。このとき静電チャックの表面粗さ
を変化させることによって図７のように被処理体温度を
調節できる。表面粗さは０．０５μｍＲａ〜２μｍＲａ
の範囲が望ましい。By changing the applied voltage, the temperature of the object 10 can be changed. At this time, the temperature of the object to be processed can be adjusted as shown in FIG. 7 by changing the surface roughness of the electrostatic chuck. Surface roughness is 0.05 μmRa to 2 μmRa
Is desirable.
【００２６】更に、接触面積比率を変えることで被処理
体１０の温度が変化することを確認した実験結果を図８
に示した。接触面積比率をかえるにはドットの数及びド
ットの直径をかえる必要がある。本実施例に用いたドッ
トの直径は０．５ｍｍから５ｍｍで、シールリング巾は
０．５ｍｍ〜５ｍｍであった。ドットの数は接触面積比
率から換算した。ドットは静電チャック表面上に概略等
分散に配置した。FIG. 8 shows the results of an experiment in which it was confirmed that the temperature of the object 10 was changed by changing the contact area ratio.
It was shown to. To change the contact area ratio, it is necessary to change the number of dots and the diameter of the dots. The diameter of the dots used in this example was 0.5 mm to 5 mm, and the width of the seal ring was 0.5 mm to 5 mm. The number of dots was calculated from the contact area ratio. The dots were approximately evenly distributed on the surface of the electrostatic chuck.
【００２７】本実施例により、ガス封入部９に５０Torr
という高いガス圧力を封入することで被処理体１０に対
する大きな冷却効果を得られることがわかったが、その
ためには強い吸着力を発生する静電チャックが必要であ
る。例えば、接触面積比率を２０％にして５０Torrのガ
ス圧力を封入するには、理論上、６６５g/cm2の吸着
力、５％の接触面積比率で理論上２２６０g/cm2が最低
限必要である。よって吸着力が非常に大きい静電チャッ
クが必要となる。ここでは静電チャックの絶縁層の材料
としてＡｌ2Ｏ3を主成分とし、Ｃｒ2Ｏ3、ＴｉＯ2を適
量添加したセラミック焼結体を用いた。この材料の吸着
力は１０００Ｖ印可で約６０００g/cm2である。According to the present embodiment, 50 Torr
It has been found that a large cooling effect on the object 10 can be obtained by enclosing such a high gas pressure, but for that purpose, an electrostatic chuck that generates a strong suction force is required. For example, to encapsulate the gas pressure 50Torr by the contact area ratio 20%, theoretically, the suction force of 665g / cm 2, 5% should be a minimum is theoretically 2260g / cm 2 in contact area ratio of . Therefore, an electrostatic chuck having a very large suction force is required. Here, a ceramic sintered body containing Al 2 O 3 as a main component as a material of the insulating layer of the electrostatic chuck and adding appropriate amounts of Cr 2 O 3 and TiO 2 was used. The adsorbing power of this material is about 6000 g / cm 2 at 1000 V applied.
【００２８】また、吸着力が上記の値を越えるものであ
ればＳｉＣやＢａＴｉＯ3などの高誘電体材料であって
もよい。Further, a high dielectric material such as SiC or BaTiO 3 may be used as long as the attraction force exceeds the above value.
【００２９】本実施例では、被処理体１０として、シリ
コンウェハを用いたが、本発明の静電チャックは、熱適
性能を有しているためガラスなどにも適用できる。In the present embodiment, a silicon wafer is used as the object to be processed 10, but the electrostatic chuck of the present invention can be applied to glass or the like because it has a thermo-optimizing performance.
【００３０】図９は本発明に係る静電チャックを用い
て、絶縁体である被処理体を吸着したときの熱特性の実
験データを示すグラフである。被処理体１０はガラス基
板を、導電性薄膜１６はＩＴＯ（インジウム・スズ・オ
キサイド）膜をスパッタリング法により用いた。ガス封
入部９に封入されるガスとしてヘリウムを用いた。ガス
はＡｒやＮ2等の他の不活性ガスであってもよく、導電
性薄膜１６はＣｒのスパッタリング法による膜であって
も同様な効果を奏する。FIG. 9 is a graph showing experimental data of thermal characteristics when an object to be processed, which is an insulator, is adsorbed using the electrostatic chuck according to the present invention. The object 10 was a glass substrate, and the conductive thin film 16 was an ITO (indium tin oxide) film by a sputtering method. Helium was used as the gas sealed in the gas sealing section 9. The gas may be another inert gas such as Ar or N 2, and the same effect can be obtained even if the conductive thin film 16 is a film formed by sputtering of Cr.
【００３１】被処理体１０の上面から２W/cm2の熱流を
与えたときの熱特性を、横軸に上記ガスの圧力、縦軸に
被処理体１０の表面温度として表す。被処理体１０にシ
リコンウェハを用いた場合と同様に、ガス封入部９のガ
ス圧力を変化させることで被処理体１０の温度を制御で
きる様子が確認できる。The thermal characteristics when a heat flow of 2 W / cm 2 is applied from the upper surface of the object 10 are expressed as the pressure of the gas on the horizontal axis and the surface temperature of the object 10 on the vertical axis. As in the case where a silicon wafer is used for the object to be processed 10, it can be confirmed that the temperature of the object to be processed 10 can be controlled by changing the gas pressure of the gas sealing portion 9.
【００３２】[0032]
【発明の効果】以上に説明した如く本発明によれば、静
電チャックの設計時において被処理体との間の熱伝達特
性がすべて把握され、求められる加熱、冷却性能を有す
る静電チャックを設計することができる。即ち静電チャ
ックが搭載される装置の使用条件を求める実験に要する
コスト、期間を大幅に短縮することが可能な静電チャッ
クを提供することが可能となる。また、被処理体が絶縁
体である場合も、絶縁体の吸着面に導電性薄膜を設ける
ことで、静電チャックに吸着することができ、さらに本
発明の静電チャックの加熱、冷却処理により被処理体を
所定の温度に制御することが可能となる。As described above, according to the present invention, at the time of designing the electrostatic chuck, all the heat transfer characteristics with the object to be processed are grasped, and the electrostatic chuck having the required heating and cooling performance is obtained. Can be designed. That is, it is possible to provide an electrostatic chuck that can significantly reduce the cost and period required for an experiment for determining the use conditions of the device on which the electrostatic chuck is mounted. Further, even when the object to be processed is an insulator, it can be attracted to the electrostatic chuck by providing a conductive thin film on the attracting surface of the insulator, and further, by heating and cooling the electrostatic chuck of the present invention. The target object can be controlled at a predetermined temperature.
【図１】静電チャックの一例を示す平面図である。FIG. 1 is a plan view showing an example of an electrostatic chuck.
【図２】Ａ−Ａに沿った図１の断面図である。FIG. 2 is a cross-sectional view of FIG. 1 along AA.
【図３】静電チャックにより被処理体を吸着した実施例
の断面図である。FIG. 3 is a cross-sectional view of an embodiment in which an object to be processed is sucked by an electrostatic chuck.
【図４】絶縁体である被処理体の一例を示す断面図であ
る。FIG. 4 is a cross-sectional view illustrating an example of an object to be processed which is an insulator.
【図５】ガス封入部に封入されたガス圧力と、被処理体
の温度との関係を示すグラフである。FIG. 5 is a graph showing a relationship between a gas pressure sealed in a gas sealing portion and a temperature of an object to be processed.
【図６】封入ガスの圧力とガス熱伝達との関係を示すグ
ラフである。FIG. 6 is a graph showing the relationship between the pressure of the filled gas and the heat transfer of the gas.
【図７】静電チャックの印可電圧と被処理体の温度との
関係を示すグラフである。FIG. 7 is a graph showing a relationship between an applied voltage of an electrostatic chuck and a temperature of a target object.
【図８】静電チャックの固体接触部の面積比率と被処理
体の温度との関係を示すグラフである。FIG. 8 is a graph showing a relationship between an area ratio of a solid contact portion of the electrostatic chuck and a temperature of a target object.
【図９】静電チャックを用いて絶縁体である被処理体を
吸着したときの、ガス封入部に封入されたガス圧力と被
処理体の温度との関係を示すグラフである。FIG. 9 is a graph showing the relationship between the pressure of the gas sealed in the gas sealing portion and the temperature of the object when the object to be processed, which is an insulator, is adsorbed using the electrostatic chuck.
１ 静電チャック ２ ドット ３ 外周シールリング ４ 溝 ５ ガス供給口 ６ 金属プレート ７ 内部電極 ８ 冷媒流路 ９ ガス封入部 １０ 被処理体 １１ 金属プレート接合部 １２ 電圧印可用導線 １３ ガス供給配管 １４ 冷媒供給口 １５ 冷媒排出口 １６ 導電性薄膜 DESCRIPTION OF SYMBOLS 1 Electrostatic chuck 2 Dot 3 Perimeter seal ring 4 Groove 5 Gas supply port 6 Metal plate 7 Internal electrode 8 Refrigerant flow path 9 Gas enclosure 10 Object to be processed 11 Metal plate joint 12 Voltage application lead 13 Gas supply pipe 14 Refrigerant Supply port 15 Refrigerant discharge port 16 Conductive thin film
───────────────────────────────────────────────────── フロントページの続き (72)発明者 北林 徹夫 福岡県北九州市小倉北区中島２丁目１番１ 号 東陶機器株式会社内 (72)発明者 堀 裕明 福岡県北九州市小倉北区中島２丁目１番１ 号 東陶機器株式会社内 Ｆターム(参考） 3C016 GA10 ────────────────────────────────────────────────── ─── Continuing from the front page (72) Inventor Tetsuo Kitabayashi 2-1-1 Nakajima, Kokurakita-ku, Kitakyushu-shi, Fukuoka Prefecture Totoki Equipment Co., Ltd. (72) Inventor Hiroaki Hori 2 Nakajima, Kokurakita-ku, Kitakyushu-shi, Fukuoka Prefecture F-term (reference) 3C016 GA10
Claims (10)
に電圧を印可することで被処理体との間に吸着力を発生
させ、被処理体の吸着、保持を行う静電チャックにおい
て、静電チャックの吸着面に溝と、凸状のドットと、外
周シールリングを有することを特徴とする静電チャッ
ク。An electrostatic chuck that has an internal electrode in a dielectric and applies a voltage to the internal electrode to generate an attractive force between the internal electrode and the object to be suctioned and to hold the object to be processed. 3. The electrostatic chuck according to claim 1, further comprising a groove, a convex dot, and an outer peripheral seal ring on a suction surface of the electrostatic chuck.
電チャック吸着面との間に形成された隙間空間内に、被
処理体の加熱・冷却を行うガスを封入し、該ガスの圧力
領域が、分子流領域であることを特徴とする請求項１記
載の静電チャック。2. A gas for heating and cooling an object to be processed is enclosed in a gap formed between the object to be processed and an electrostatic chuck chucking surface when the object to be processed is adsorbed. The electrostatic chuck according to claim 1, wherein the pressure region is a molecular flow region.
との固体接触部の表面粗さを目標の処理温度に応じて所
定の粗さに加工しておくことで、被処理体と静電チャッ
ク間の固体熱伝導を最適なものとしたことを特徴とする
請求項１または２に記載の静電チャック。3. The object to be processed and the object to be processed are electrostatically chucked by processing the surface roughness of a solid contact portion with the object to be processed to a predetermined roughness in accordance with a target processing temperature. 3. The electrostatic chuck according to claim 1, wherein solid heat conduction between the chucks is optimized.
との固体接触部の面積と、ガスが封入される部分の面積
との比率が、処理中の被処理体の温度を所定の温度付近
で制御可能となるための最適な比率となるように設計さ
れていることを特徴とする請求項１〜３いずれか１項に
記載の静電チャック。4. A ratio of an area of a solid contact portion with an object to be processed and an area of a portion in which gas is sealed on the electrostatic chuck attraction surface is such that the temperature of the object to be processed during processing is close to a predetermined temperature. The electrostatic chuck according to any one of claims 1 to 3, wherein the electrostatic chuck is designed so as to have an optimal ratio for controllable by the control.
が封入される部分の面積との比率が５％よりも小さいこ
とを特徴とする請求項４記載の静電チャック。5. The electrostatic chuck according to claim 4, wherein the ratio of the area of the solid contact portion with the object to be processed and the area of the portion in which the gas is sealed is smaller than 5%.
形成される隙間空間内に封入されるガスとして、ヘリウ
ムを利用することを特徴とする請求項１〜５いずれか１
項に記載の静電チャック。6. The method according to claim 1, wherein helium is used as a gas sealed in a gap formed between the object to be processed and the electrostatic chuck suction surface.
Item 7. The electrostatic chuck according to item 1.
に電圧を印可することで被処理体との間に吸着力を発生
させ、被処理体の吸着、保持を行う静電チャックにおい
て、被処理体が絶縁体であって、該絶縁体の吸着面に導
電性薄膜を設けることで吸着可能となしたことを特徴と
する吸着方法。7. An electrostatic chuck having an internal electrode in a dielectric material, and applying a voltage to the internal electrode to generate an attraction force between the internal electrode and an object to be processed, thereby attracting and holding the object to be processed. 3. The adsorption method according to claim 1, wherein the object to be processed is an insulator, and the adsorption is performed by providing a conductive thin film on an adsorption surface of the insulator.
載の吸着方法。8. The adsorption method according to claim 7, wherein the object to be processed is a glass substrate.
スズ・オキサイド）膜を用いる請求項７記載の吸着方
法。9. An indium (ITO) film as a conductive thin film.
The adsorption method according to claim 7, wherein a tin (oxide) film is used.
求項７記載の吸着方法。10. The adsorption method according to claim 7, wherein a chromium film is used as the conductive thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11142322A JP2000317761A (en) | 1999-03-01 | 1999-05-21 | Electrostatic chuck and attracting method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5321399 | 1999-03-01 | ||
| JP11-53213 | 1999-03-01 | ||
| JP11142322A JP2000317761A (en) | 1999-03-01 | 1999-05-21 | Electrostatic chuck and attracting method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000317761A true JP2000317761A (en) | 2000-11-21 |
Family
ID=26393930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11142322A Pending JP2000317761A (en) | 1999-03-01 | 1999-05-21 | Electrostatic chuck and attracting method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000317761A (en) |
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| JP2002270681A (en) * | 2001-03-07 | 2002-09-20 | Anelva Corp | Electrostatic attraction mechanism for processing substrate |
| JP2006156938A (en) * | 2004-10-29 | 2006-06-15 | Tokyo Electron Ltd | Board placing table, board processing apparatus and method for controlling temperature of board |
| JP2009060011A (en) * | 2007-09-03 | 2009-03-19 | Tokyo Electron Ltd | Board placing table, board processing apparatus and temperature controlling method |
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1999
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|---|---|---|---|---|
| JP2002270681A (en) * | 2001-03-07 | 2002-09-20 | Anelva Corp | Electrostatic attraction mechanism for processing substrate |
| US7623334B2 (en) | 2002-06-18 | 2009-11-24 | Canon Anelva Corporation | Electrostatic chuck device |
| US7724493B2 (en) | 2002-06-18 | 2010-05-25 | Canon Anelva Corporation | Electrostatic chuck device |
| US7791857B2 (en) | 2002-06-18 | 2010-09-07 | Canon Anelva Corporation | Electrostatic chuck device |
| US7848077B2 (en) | 2002-06-18 | 2010-12-07 | Canon Anelva Corporation | Electrostatic chuck device |
| JP2006156938A (en) * | 2004-10-29 | 2006-06-15 | Tokyo Electron Ltd | Board placing table, board processing apparatus and method for controlling temperature of board |
| JP4642550B2 (en) * | 2004-10-29 | 2011-03-02 | 東京エレクトロン株式会社 | Substrate mounting table, substrate processing apparatus, and substrate temperature control method |
| JP2009060011A (en) * | 2007-09-03 | 2009-03-19 | Tokyo Electron Ltd | Board placing table, board processing apparatus and temperature controlling method |
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| US8696862B2 (en) | 2008-02-06 | 2014-04-15 | Tokyo Electron Limited | Substrate mounting table, substrate processing apparatus and substrate temperature control method |
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| US8068326B2 (en) | 2008-06-13 | 2011-11-29 | Shinko Electric Industries Co., Ltd. | Electrostatic chuck and substrate temperature control fixing apparatus |
| US8641825B2 (en) | 2008-06-13 | 2014-02-04 | Shinko Electric Industries Co., Ltd. | Substrate temperature regulation fixed apparatus |
| CN104835765A (en) * | 2015-04-27 | 2015-08-12 | 沈阳拓荆科技有限公司 | Temperature-controllable heating plate with boss surface structure arranged in polygon shape |
| KR20170048200A (en) * | 2015-10-26 | 2017-05-08 | 도쿄엘렉트론가부시키가이샤 | Substrate cooling method, substrate transfer method, and load-lock mechanism |
| JP2017084897A (en) * | 2015-10-26 | 2017-05-18 | 東京エレクトロン株式会社 | Substrate cooling method, substrate transfer method in load lock device, and load lock device |
| KR101898340B1 (en) * | 2015-10-26 | 2018-09-12 | 도쿄엘렉트론가부시키가이샤 | Substrate cooling method, substrate transfer method, and load-lock mechanism |
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| JP7308035B2 (en) | 2019-01-09 | 2023-07-13 | 日本特殊陶業株式会社 | electrostatic chuck |
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