CN100468619C - Temperature control device of etching equipment and its method for controlling wafer temperature - Google Patents
Temperature control device of etching equipment and its method for controlling wafer temperature Download PDFInfo
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- CN100468619C CN100468619C CNB2006101125688A CN200610112568A CN100468619C CN 100468619 C CN100468619 C CN 100468619C CN B2006101125688 A CNB2006101125688 A CN B2006101125688A CN 200610112568 A CN200610112568 A CN 200610112568A CN 100468619 C CN100468619 C CN 100468619C
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- cold air
- body cold
- edge
- air passage
- temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention discloses a temperature-controlling device of an etching device and method of controlling the wafer temperature, and includes electrostatic chuck on which the wafer can be placed. The unconnected central and side back-cool-gas channels are set on the electrostatic chuck; the central back-cool-gas channel partly intimately contacts with the wafer, and is well sealed; margin of the side back-cool-gas channel, which partly contacts the wafer, is a little rough, or a or several back-cool-gas leak holes are set on the margin of electrostatic chuck; the back-cool gas in the side back-cool-gas channel can leak along the rough surface or the leak holes; the central back-cool-gas channel connects a pressure controller; the side back-cool-gas channel connects a mass and flux controller. The present invention has simple structure and is easy to use; heat-dissipated effect of wafer margin can be changed, and temperature of wafer can also be controlled. The present invention is mainly applied to the temperature-controlling system in semiconductor processing.
Description
Technical field
The present invention relates to the temperature-controlling system in a kind of production process of semiconductor, relate in particular to a kind of temperature regulating device of chip etching equipment, and the control wafer method of temperature.
Background technology
Chuck is used to fixing and supporting wafers in production process of semiconductor, avoid wafer to occur moving or inconsistent phenomenon in processing procedure.Electrostatic chuck adopts electrostatic attraction to fix wafer, and mechanical chuck and vacuum chuck with respect to former employing have a lot of advantages.Electrostatic chuck has reduced the wafer breakage that causes owing to reasons such as pressure, collisions when using mechanical chuck; Increased the area that wafer can effectively be processed; Reduced the deposition of wafer surface corrosion composition granule; And can under the vacuum technology environment, work.
Typical electrostatic chuck is made of pedestal and static module fixed thereon.The static module comprises at least one electrode, and electrode is insulated layer parcel.When electrostatic chuck is worked, on the electrostatic chuck electrode, add Dc bias, produce the electric charge accumulation on the electrode thereby make.Under the situation of using single electrode to drive, under the effect of the plasma in the reaction chamber, make the electric charge accumulation to occur on the wafer, the opposite polarity on the charge polarity of accumulation and the electrostatic chuck electrode, thus between electrode and wafer, produce Coulomb attraction.Under the situation of using bipolar electrode to drive, two electrodes that accumulated the opposed polarity electric charge are used to wafer is produced gravitation.
Typical electrostatic chuck has the cooling liquid passage therein, crosses the temperature of cooling liquid wherein by cooler (Chiller) control flows, controls the temperature of electrostatic chuck.
The temperature control of wafer is to realize by the temperature of controlling electrostatic chuck, but because the contact-making surface between wafer and the electrostatic chuck can not be definitely level and smooth, therefore thermal conduction effect each other is bad.General way is used back of the body cold air usually for feed cold media gas between chip back surface and electrostatic chuck.
The temperature control method that traditional electrostatic chuck temperature-controlling system adopts is normally made a back of the body cold air passage on electrostatic chuck, back of the body cold air is imported by this passage.Made certain air guide groove system on the wafer support surface of electrostatic chuck, the groove system on wafer and electrostatic chuck surface has formed one near airtight chamber structure, and back of the body cold air just circulates in this chamber.When adopting this method, the leakage for fear of back of the body cold air requires gas directing system can not extend to the marginal portion of wafer support, generally need stay 10 to 20 mm distance between the edge of gas directing system and the Waffer edge.Promptly in the annular region of 10 to 20 millimeters of distance Waffer edges, the electrostatic chuck wafer is the plane.This just causes carrying on the back the marginal portion that cold air can not fully arrive wafer, causes Waffer edge part radiating effect relatively poor, and temperature is higher.
On the contrary, if gas directing system is too partly extended to Waffer edge, can strengthen the amount of leakage of back of the body cold air, this will reduce the control ability of system to chip temperature, particularly lip temperature, make appearance zone uneven in temperature on the wafer, cause the temperature of entire wafer to descend.
In addition, because fear in technical process, electrostatic chuck is subjected to the plasma injury, the card diameter of electrostatic chuck is typically designed to the diameter less than wafer, this just causes the Waffer edge part can not be placed on the electrostatic chuck, but be placed on other parts such as the focusing ring, these parts do not have function of temperature control.And do not carry on the back cold air in the Waffer edge part.These factors have all caused the non-uniform temperature of wafer in the technical process.
In etching technics, the inhomogeneous meeting of chip temperature causes the inhomogeneous of etching result, and some zone has very high etching section angle value after the etching, and other regional etching section angles are then very poor.The temperature lower than predetermined process parameters can cause too much polymer deposition, because the sedimentation coefficient of polymer is higher at low temperatures, this has just formed relatively poor etching section angle value in some zone of wafer, has the sidewall of taper.This etching effect ought be eliminated as far as possible, and these polymer depositions are difficult to remove from wafer.
The method that solves has two kinds at present:
A kind ofly be, allow back of the body cold air leak in the electrostatic chuck marginal portion, to improve the heat dispersion of Waffer edge part, but in this method, the gas that leak the marginal portion is communicated with the gas of center wafer and other part, and therefore the amount of the gas that leaks is uncontrollable and measure, and if the gas flow of leakage excessive, must influence the back of the body cold air pressure of other parts, make the difficult control of temperature of wafer.
Another kind is, lateral layout back of the body cold air leak at electrostatic chuck, but the effect of this back of the body cold air leak mainly is to make that the pressure of back of the body cold air is stable, therefore those back of the body cold air body openings are communicated with the electrostatic chuck surface, the amount of leaking is very little, just, can not play cooling effect to the Waffer edge part for stable back of the body cold-scarce cold air pressure.
Summary of the invention
The temperature regulating device that the purpose of this invention is to provide a kind of etching apparatus simple in structure, easy to use, and use this device control wafer method of temperature both can change the radiating effect of Waffer edge part, again the effective temperature of control wafer.
The objective of the invention is to be achieved through the following technical solutions:
The temperature regulating device of etching apparatus of the present invention, be located at the electrostatic chuck place of etching apparatus, be used to control the temperature of electrostatic chuck, can place wafer on the electrostatic chuck, described electrostatic chuck is provided with center back of the body cold air passage and edge back of the body cold air passage, and described center back of the body cold air passage is not communicated with edge back of the body cold air passage; Described center back of the body cold air passage is connected with source of the gas respectively with edge back of the body cold air passage.
The part that described center back of the body cold air passage contacts with wafer is contact and good seal closely.
The part contact-making surface that the edge of described edge back of the body cold air passage contacts with wafer is coarse slightly, and back of the body cold air can partly be leaked along matsurface.
The edge of described electrostatic chuck is provided with one or more back of the body cold air leaks, described back of the body cold air leak and edge back of the body cold air channel connection.
Described center back of the body cold air passage is connected with the center gas circuit, and described edge back of the body cold air passage is connected with the edge gas circuit; Described center gas circuit is provided with pressure controller, and described edge gas circuit is provided with mass flow controller; Described center gas circuit is connected with source of the gas respectively with the edge gas circuit.
Described center back of the body cold air passage and edge back of the body cold air passage are respectively equipped with many groups, are not communicated with mutually each other; Described center gas circuit and edge gas circuit are respectively equipped with one or more.
Described source of the gas has one or more.
The temperature regulating device control wafer method of temperature of utilizing above-mentioned etching apparatus of the present invention may further comprise the steps:
A, feed back of the body cold air to center back of the body cold air passage and edge back of the body cold air passage, and the back of the body cold air in the edge back of the body cold air passage is partly leaked by source of the gas;
The temperature at B, the pressure control wafer middle part by back of the body cold air in the control centre back of the body cold air passage; And by carrying on the back the temperature of the flow control Waffer edge part of cold air in the control edge back of the body cold air passage.
In the described steps A:
Back of the body cold air in the edge back of the body cold air passage is partly leaked by the matsurface or the back of the body cold air leak of electrostatic chuck edge;
Among the described step B:
Carry on the back the pressure of back of the body cold air in the cold air passage by the pressure controller control centre that the center gas circuit is provided with; And control the edge by the mass flow controller that the edge gas circuit is provided with and carry on the back the flow of carrying on the back cold air in the cold air passage.
Described back of the body cold air is a helium.
As seen from the above technical solution provided by the invention, the temperature regulating device of etching apparatus of the present invention, because electrostatic chuck is provided with not disconnected mutually center back of the body cold air passage and edge back of the body cold air passage, the part that center back of the body cold air passage contacts with wafer is contact and good seal closely; The part contact-making surface that the edge of edge back of the body cold air passage contacts with wafer is coarse slightly, or is provided with one or more back of the body cold air leaks at the edge of electrostatic chuck, and the back of the body cold air in the edge back of the body cold air passage can partly be leaked along matsurface or leak.
Both can carry on the back the temperature at the pressure control wafer middle part of back of the body cold air in the cold air passage by control centre; Can improve the Waffer edge radiating effect, the temperature of control wafer marginal portion by the flow of back of the body cold air in the control edge back of the body cold air passage again.
Because the center gas circuit is provided with pressure controller, and the edge gas circuit is provided with mass flow controller, can realize very easily that the pressure to back of the body cold air in the back of the body cold air passage of center controls and the edge is carried on the back the flow control of back of the body cold air in the cold air passage again.
Simple in structure, easy to use, both can change the radiating effect of Waffer edge part, again the effective temperature of control wafer.The present invention mainly is applicable to the temperature-controlling system in the production process of semiconductor, also is applicable to the temperature control of other occasion.
Description of drawings
Fig. 1 is the structural representation of the temperature regulating device of prior art one etching equipment;
Fig. 2 is the structural representation of the temperature regulating device of prior art two etching apparatuss;
Fig. 3 is the structure diagram of the temperature regulating device specific embodiment one of etching apparatus of the present invention;
Fig. 4 is the structure diagram of the temperature regulating device specific embodiment two of etching apparatus of the present invention.
Embodiment
The preferable embodiment of the present invention as shown in Figure 3, be located at electrostatic chuck 5 places of etching apparatus, be used to control the temperature of electrostatic chuck 5, can place wafer 1 on the electrostatic chuck 5, electrostatic chuck 5 is provided with center back of the body cold air passage 2 and edge back of the body cold air passage 4, and center back of the body cold air passage 2 is not communicated with edge back of the body cold air passage 4.Center back of the body cold air passage 2 is connected with source of the gas 10 respectively with edge back of the body cold air passage 4,
The part that center back of the body cold air passage 2 contacts with wafer 1 is contact and good seal closely.The pressure that helps back of the body cold air in control centre's back of the body cold air passage 2 is with the temperature of control wafer 1.
Because the radiating effect of wafer 1 edge is relatively poor, therefore, the back of the body cold air in the edge back of the body cold air passage 4 needs certain leakage, with the radiating effect of improvement wafer 1 edge.
For this reason, the preferable embodiment one that the present invention adopts, as shown in Figure 3:
Be provided with one or more back of the body cold air leaks 11 at the edge of electrostatic chuck 5, back of the body cold air leak 11 is communicated with edge back of the body cold air passage 4, and back of the body cold air can be carried on the back the leakage of cold air passage 4 parts along the edge.
The preferable embodiment one that the present invention adopts, as shown in Figure 4:
At the edge of electrostatic chuck 5, specifically the part contact-making surface 3 that contacts with wafer 1 at the edge of edge back of the body cold air passage 4 is coarse slightly, and back of the body cold air can be leaked along matsurface 3 parts.
Center back of the body cold air passage 2 is connected with center gas circuit 9, and edge back of the body cold air passage 4 is connected with edge gas circuit 7.Center gas circuit 9 is provided with pressure controller 8, and edge gas circuit 7 is provided with mass flow controller 6.Center gas circuit 9 is connected with source of the gas 10 respectively with edge gas circuit 7.
By the pressure of back of the body cold air in the pressure controller 8 control centres back of the body cold air passage 2, in order to the temperature of control wafer 1.
And by carrying on the back the flow of cold air in the mass flow controller 6 control edge back of the body cold air passages 4, in order to the radiating effect of improvement wafer 1 edge.
Described center back of the body cold air passage 2 can be respectively equipped with many groups with edge back of the body cold air passage 4, is not communicated with mutually each other.
Many group switching centre back of the body cold air passages 2 can also can have multichannel center gas circuit 9 air feed respectively by one tunnel center gas circuit, 9 unified air feed.
Many groups edge back of the body cold air passage 4 can also can have multichannel edge gas circuit 7 air feed respectively by a Road Edge gas circuit 7 unified air feed.
Used source of the gas 10 has a central gas supply, also can have two or more respectively to center back of the body cold air passage 2 and edge back of the body cold air passage 4 air feed.
The present invention utilizes the temperature regulating device control wafer method of temperature of above-mentioned etching apparatus, may further comprise the steps:
Step 1, feed back of the body cold air to center back of the body cold air passage and edge back of the body cold air passage, and the back of the body cold air in the edge back of the body cold air passage is partly leaked by source of the gas;
The temperature at step 2, the pressure control wafer middle part by back of the body cold air in the control centre back of the body cold air passage; And by carrying on the back the temperature of the flow control Waffer edge part of cold air in the control edge back of the body cold air passage.
In step 1: the back of the body cold air in the edge back of the body cold air passage is partly leaked by the matsurface or the back of the body cold air leak of electrostatic chuck edge;
In step 2: by the pressure of back of the body cold air in the pressure controller control centre back of the body cold air passage that is provided with on the gas circuit of center; And control the edge by the mass flow controller that the edge gas circuit is provided with and carry on the back the flow of carrying on the back cold air in the cold air passage.
In whole control process, because center back of the body cold air passage 2 is not communicated with edge back of the body cold air passage 4, the back of the body cold air in the edge back of the body cold air passage is partly leaked, reach the problem of improving the Waffer edge radiating effect; Carry on the back the pressure of cold air again in the not influence center back of the body cold air passage, help the temperature of control wafer.
Used back of the body cold air is helium, nitrogen or other gas in the system.
The above; only for the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (9)
1, a kind of temperature regulating device of etching apparatus, be located at the electrostatic chuck place of etching apparatus, be used to control the temperature of electrostatic chuck, can place wafer on the electrostatic chuck, it is characterized in that, described electrostatic chuck is provided with center back of the body cold air passage and edge back of the body cold air passage, and described center back of the body cold air passage is not communicated with edge back of the body cold air passage; Described center back of the body cold air passage is connected with source of the gas respectively with edge back of the body cold air passage;
The part that described center back of the body cold air passage contacts with wafer is contact and good seal closely; Back of the body cold air in the described edge back of the body cold air passage can be leaked along the edge part of described edge back of the body cold air passage.
2, the temperature regulating device of etching apparatus according to claim 1 is characterized in that, the part contact-making surface that the edge of described edge back of the body cold air passage contacts with wafer is coarse slightly.
3, the temperature regulating device of etching apparatus according to claim 1 is characterized in that, the edge of described edge back of the body cold air passage is provided with one or more back of the body cold air leaks, described back of the body cold air leak and described edge back of the body cold air channel connection.
According to the temperature regulating device of claim 1,2 or 3 described etching apparatuss, it is characterized in that 4, described center back of the body cold air passage is connected with the center gas circuit, described edge back of the body cold air passage is connected with the edge gas circuit; Described center gas circuit is provided with pressure controller, and described edge gas circuit is provided with mass flow controller; Described center gas circuit is connected with source of the gas respectively with the edge gas circuit.
5, the temperature regulating device of etching apparatus according to claim 4 is characterized in that, described center back of the body cold air passage and edge back of the body cold air passage are respectively equipped with many groups, are not communicated with mutually each other; Described center gas circuit and edge gas circuit are respectively equipped with one or more.
6, the temperature regulating device of etching apparatus according to claim 5 is characterized in that, described source of the gas has one or more.
7, a kind of temperature regulating device control wafer method of temperature of utilizing each described etching apparatus of claim 1 to 6 is characterized in that, may further comprise the steps:
A, feed back of the body cold air to center back of the body cold air passage and edge back of the body cold air passage, and the back of the body cold air in the edge back of the body cold air passage is partly leaked by source of the gas;
The temperature at B, the pressure control wafer middle part by back of the body cold air in the control centre back of the body cold air passage; And by carrying on the back the temperature of the flow control Waffer edge part of cold air in the control edge back of the body cold air passage.
8, control wafer method of temperature according to claim 7 is characterized in that, in the described steps A:
Back of the body cold air in the edge back of the body cold air passage is partly leaked by the matsurface or the back of the body cold air leak of electrostatic chuck edge;
Among the described step B:
Carry on the back the pressure of back of the body cold air in the cold air passage by the pressure controller control centre that the center gas circuit is provided with; And control the edge by the mass flow controller that the edge gas circuit is provided with and carry on the back the flow of carrying on the back cold air in the cold air passage.
9, control wafer method of temperature according to claim 8 is characterized in that, described back of the body cold air is a helium.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101125688A CN100468619C (en) | 2006-08-23 | 2006-08-23 | Temperature control device of etching equipment and its method for controlling wafer temperature |
| PCT/CN2006/003175 WO2008028352A1 (en) | 2006-08-23 | 2006-11-27 | An apparatus of controlling temperature and a method of controlling the temperature of wafer |
| KR1020097001508A KR20090033247A (en) | 2006-08-23 | 2006-11-27 | An apparatus of controlling temperature and a method of controlling the temperature of wafer |
| TW096129817A TW200908073A (en) | 2006-08-23 | 2007-08-13 | An apparatus of controlling temperature and a method of controlling the temperature of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101125688A CN100468619C (en) | 2006-08-23 | 2006-08-23 | Temperature control device of etching equipment and its method for controlling wafer temperature |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101131917A CN101131917A (en) | 2008-02-27 |
| CN100468619C true CN100468619C (en) | 2009-03-11 |
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ID=39129124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101125688A Active CN100468619C (en) | 2006-08-23 | 2006-08-23 | Temperature control device of etching equipment and its method for controlling wafer temperature |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR20090033247A (en) |
| CN (1) | CN100468619C (en) |
| TW (1) | TW200908073A (en) |
| WO (1) | WO2008028352A1 (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8960686B2 (en) * | 2011-09-30 | 2015-02-24 | Electro Scientific Industries, Inc. | Controlled surface roughness in vacuum retention |
| CN103137517B (en) * | 2011-11-25 | 2016-08-03 | 中芯国际集成电路制造(北京)有限公司 | For processing the reaction unit of wafer, electrostatic chuck and wafer temperature control method |
| US9916998B2 (en) * | 2012-12-04 | 2018-03-13 | Applied Materials, Inc. | Substrate support assembly having a plasma resistant protective layer |
| CN104134624B (en) * | 2013-05-02 | 2017-03-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pallet and plasma processing device |
| CN104241184B (en) * | 2013-06-19 | 2017-09-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Bogey and plasma processing device |
| CN104377105B (en) * | 2013-08-15 | 2017-02-08 | 中微半导体设备(上海)有限公司 | Plasma treatment device and helium gas pipe |
| CN104746008B (en) * | 2013-12-30 | 2017-06-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Go to gas chamber |
| KR101507548B1 (en) * | 2014-01-17 | 2015-04-07 | 피에스케이 주식회사 | Supporting unit and apparatus for treating substrate |
| US10020218B2 (en) | 2015-11-17 | 2018-07-10 | Applied Materials, Inc. | Substrate support assembly with deposited surface features |
| CN107768300B (en) * | 2016-08-16 | 2021-09-17 | 北京北方华创微电子装备有限公司 | Chuck, reaction chamber and semiconductor processing equipment |
| CN106373916A (en) * | 2016-10-24 | 2017-02-01 | 上海华力微电子有限公司 | Electroplating machine station alignment module and wafer suction disc thereof |
| CN111834247B (en) * | 2019-04-23 | 2023-09-08 | 北京北方华创微电子装备有限公司 | Cooling device and semiconductor processing equipment |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5883778A (en) * | 1994-02-28 | 1999-03-16 | Applied Materials, Inc. | Electrostatic chuck with fluid flow regulator |
| US5748435A (en) * | 1996-12-30 | 1998-05-05 | Applied Materials, Inc. | Apparatus for controlling backside gas pressure beneath a semiconductor wafer |
| JP4151749B2 (en) * | 1998-07-16 | 2008-09-17 | 東京エレクトロンＡｔ株式会社 | Plasma processing apparatus and method |
| KR100541447B1 (en) * | 2003-07-23 | 2006-01-11 | 삼성전자주식회사 | Electrostatic chuck for wafer |
-
2006
- 2006-08-23 CN CNB2006101125688A patent/CN100468619C/en active Active
- 2006-11-27 KR KR1020097001508A patent/KR20090033247A/en not_active Application Discontinuation
- 2006-11-27 WO PCT/CN2006/003175 patent/WO2008028352A1/en active Application Filing
-
2007
- 2007-08-13 TW TW096129817A patent/TW200908073A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW200908073A (en) | 2009-02-16 |
| KR20090033247A (en) | 2009-04-01 |
| CN101131917A (en) | 2008-02-27 |
| WO2008028352A1 (en) | 2008-03-13 |
| TWI340988B (en) | 2011-04-21 |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016, building 2, block M5, No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |