CN101345204A - Retaining device and temperature control method for processed body - Google Patents
Retaining device and temperature control method for processed body Download PDFInfo
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- CN101345204A CN101345204A CNA2007101191063A CN200710119106A CN101345204A CN 101345204 A CN101345204 A CN 101345204A CN A2007101191063 A CNA2007101191063 A CN A2007101191063A CN 200710119106 A CN200710119106 A CN 200710119106A CN 101345204 A CN101345204 A CN 101345204A
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- holding device
- electric heater
- handled object
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Abstract
The invention discloses a retaining device of a processed body and a temperature control method thereof, comprising an insulated layer and an aluminium base; wherein, an electric heater layer is arranged between the insulated layer and the aluminium base; the electric heater layer comprises a two-ring or multi-ring electric heater. The insulated layer is provided with two or more helium gas areas; each helium gas area is provided with an independent helium gas inlet. The temperature of the retaining device of the processed body is controlled by area by the multi-ring electric heater; furthermore, the temperature of the wafer on the retaining device of the processed body is controlled by area by a plurality of helium areas, thus effectively improving the etching uniformity of the plasma etching; the retaining device and the method of the invention are mainly applied to the semiconductor wafer processing technology such as etching and PVD process, etc.
Description
Technical field
The present invention relates to a kind of processing technology of semiconductor wafer, relate in particular to a kind of holding device and temperature-controlled process thereof of handled object of wafer process equipment.
Background technology
In integrated circuit (IC) process for making, particularly in etching, physical vapor deposition (PVD) and the chemical vapor deposition (CVD) process, the holding device (Electro Static Chuck is called for short ESC) of general use handled object fixes, supports and transmits wafer (Wafer), avoids wafer to occur moving or inconsistent phenomenon in technical process.The holding device of handled object adopts the mode of electrostatic attraction to fix wafer, relatively has lot of advantages with traditional mechanical chuck and vacuum cup.The holding device of handled object has reduced in the process of using traditional chuck, because the damage that does not conform to reparation that mechanical reasons such as pressure, collision cause wafer; Owing to adopt electrostatic attraction mechanical fixation useless, increased effective working (finishing) area of wafer; Reduced because the particle contamination that mechanical collision produces; Because the holding device of handled object contacts more effectively in carrying out heat conduction fully with wafer; And overcome the critical defect of vacuum cup, can in the high vacuum reaction chamber, use.
In semiconductor processes, plasma etch process is very responsive to temperature, and temperature control is very strict, needs accurately control temperature (± 1 ℃), and temperature homogeneity directly influences etching homogeneity.In plasma etch process, the temperature around the wafer is than center temperature height, and the temperature height is the major reason that causes the Waffer edge etch rate high all around.Therefore, need to the center of the holding device of handled object with adopt different temperature control all around.
As shown in Figure 1 and Figure 2, the holding device of handled object of the prior art comprises aluminium base 16, the top of aluminium base 16 is insulating barriers 14, the DC electrode layer is imbedded in the insulating barrier 14, and the holding device of handled object is exactly to utilize the electrostatic attraction that produces between DC electrode layer and the wafer to reach the purpose of fixed wafer.
In the above-mentioned prior art, the temperature control system of the holding device of handled object mainly comprises temperature control device (Chiller) and helium feed system, be distributed with Chiller import 3, Chiller outlet 4 and helium inlet 5 on the aluminium base 16, there is helium hole 2 uniform on helium raceway groove 1 and the helium raceway groove 1 insulating barrier 14 outer rings.Chiller carries out accurate temperature control to the holding device of handled object, and precision generally is controlled at ± and 1 ℃; Helium is an inert gas, is used for improving the heat conduction of the holding device of wafer and handled object, reaches the purpose of cooling wafer.Helium enters helium raceway groove 1 by helium hole 2, and equally distributed helium hole 2 evenly distributes helium in the helium raceway groove.
There is following shortcoming at least in above-mentioned prior art:
Temperature control device is single, can not and carry out temperature control all around respectively to the center of the holding device of handled object, more can not carry out subregion control to the holding device of handled object, cause the insulating barrier center and peripheral temperature of holding device of handled object approaching, can not reach satisfied etching homogeneity, the edge etch rate is higher.
Summary of the invention
The purpose of this invention is to provide a kind of holding device and temperature-controlled process thereof that can carry out temperature controlled handled object to the holding device subregion of handled object.
The objective of the invention is to be achieved through the following technical solutions:
The holding device of handled object of the present invention comprises insulating barrier, aluminium base, is provided with the electric heater layer between described insulating barrier and the aluminium base, and described electric heater layer comprises the multi-turn electric heater.
The temperature-controlled process of the holding device of handled object of the present invention, the multi-turn electric heater by described electric heater layer carries out subregion control to the temperature of the holding device of handled object.
As seen from the above technical solution provided by the invention, the holding device of handled object of the present invention and temperature-controlled process thereof, owing to be provided with the electric heater layer between insulating barrier and the aluminium base, the electric heater layer comprises the multi-turn electric heater.Can carry out subregion control to the temperature of the holding device of handled object by described multi-turn electric heater.Be mainly used in the semiconductor die machining process.
Description of drawings
Fig. 1 is the structural representation of the holding device of handled object in the prior art;
Fig. 2 is the vertical view of Fig. 1;
Fig. 3 is the structural representation of the holding device specific embodiment one of handled object of the present invention;
Fig. 4 is the vertical view of Fig. 3;
Fig. 5 is the structural representation of the electric heater layer in the holding device specific embodiment one of handled object of the present invention;
Fig. 6 is the layout schematic diagram of helium raceway groove of the holding device specific embodiment two of handled object of the present invention.
Embodiment
The holding device of handled object of the present invention, its preferable specific embodiment is just like Fig. 3, Fig. 4, shown in Figure 5, comprise insulating barrier 14, aluminium base 16, on the insulating barrier 14 wafer 17 can be set, be provided with electric heater layer 15 between described insulating barrier 14 and the aluminium base 16, described electric heater layer 15 comprises the multi-turn electric heater.
In the plasma etch process process, because the influence of factor in many ways, there is corvee in the temperature at center wafer and edge, has a strong impact on etch rate and etching homogeneity.Aluminium base 16 is by the mode of embedded water channel, links to each other with temperature control device (Chiller) by Chiller import 3 and Chiller outlet 4 and carries out temperature control, and still, Chiller generally can only carry out thermostatic control to the holding device of handled object.
The present invention increases electric heater layer 15 when implementing the temperature control device temperature control, the hot device layer 15 of electrode can be divided into outer ring electric heater 18 and inner ring electric heater 19, by respectively Internal and external cycle heater input power being controlled, thereby on the basis of Chiller temperature control, realize the subregion temperature control of the holding device of handled object, to satisfy the demand of etching technics to temperature to wafer 17.Wherein electric heater layer 15 can adopt dual mode processing, first kind: electric heater 15 and aluminium base 16 are adhesively fixed by silicon bonding, also are that the silicon bonding agent is bonding between ceramic insulating layer 14 and the electric heater layer 15, and two places must guarantee vacuum seal.Second kind: the electric heater layer forms with ceramic insulating layer 14 sintering, and it is bonding that last and aluminium base 16 passes through the silicon bonding agent, guarantees vacuum seal.
In the holding device of described handled object, electric heater layer 15 can comprise 2,3,4 circle electric heaters, or the multi-turn electric heater.
Described insulating barrier is provided with a plurality of helium zone, and each helium zone is provided with independent helium air inlet.Can establish 2,3,4 helium zones, or a plurality of helium zone.
Helium is inert gas commonly used, and the helium of feeding can effectively strengthen the heat conduction of the holding device of handled object to wafer 17, can regulate heat conducting efficient by the control to helium pressure.Can on described insulating barrier 14, be provided with helium zone, center and helium zone, edge, mounting center helium import 12 and edge helium import 13 on aluminium base 16 accordingly, helium enters center helium raceway groove 6 by center helium import 12, helium hole, center 7; Helium enters edge helium raceway groove 8 by edge helium import 13, helium hole, edge 9.Helium is full and uniform distribution in the helium raceway groove, realizes the zoned temperature control to wafer 17.
Each above-mentioned helium zone comprises at least one circle helium raceway groove, can be 2,3,4 circle helium raceway grooves, and the bottom of described helium raceway groove is provided with a plurality of helium hole, and the helium hole communicates with the helium import.
Specific embodiment two as shown in Figure 6, inner ring helium raceway groove 20 and outer ring helium raceway groove 21 can make two coil structures into, this kind mode has enlarged the area of subregion temperature control.Can change the helium channel structure according to the actual process situation, help improving etching homogeneity.
The temperature-controlled process of the holding device of above-mentioned handled object of the present invention, the multi-turn electric heater by described electric heater layer carries out subregion control to the temperature of the holding device of handled object.
Can also carry out subregion control to the temperature of the wafer on the holding device of handled object by a plurality of helium zone on the described insulating barrier.
The combination temperature control method of electric heater layer and subregion helium is applied to the holding device of handled object, can effectively improve the etching homogeneity of plasma etching, is mainly used in the semiconductor die machining process, as etching, PVD technology etc.
The above; only for the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (10)
1, a kind of holding device of handled object comprises insulating barrier, aluminium base, it is characterized in that, is provided with the electric heater layer between described insulating barrier and the aluminium base, and described electric heater layer comprises the multi-turn electric heater.
2, the holding device of handled object according to claim 1 is characterized in that, described electric heater layer comprises 2-4 circle electric heater.
3, the holding device of handled object according to claim 2 is characterized in that, described electric heater layer comprises 2 circle electric heaters.
4, the holding device of handled object according to claim 1 is characterized in that, described insulating barrier is provided with a plurality of helium zone, and each helium zone is provided with independent helium air inlet.
5, the holding device of handled object according to claim 4 is characterized in that, described insulating barrier is provided with 2-4 helium zone.
6, the holding device of handled object according to claim 5 is characterized in that, described insulating barrier is provided with 2 helium zones, is respectively helium zone, center and helium zone, edge.
According to the holding device of claim 4,5 or 6 described handled objects, it is characterized in that 7, described each helium zone comprises at least one circle helium raceway groove, the bottom of described helium raceway groove is provided with a plurality of helium hole.
8, the holding device of handled object according to claim 7 is characterized in that, described each helium zone comprises 2 circle helium raceway grooves.
9, the temperature-controlled process of the holding device of the described handled object of a kind of claim 7 is characterized in that, the multi-turn electric heater by described electric heater layer carries out subregion control to the temperature of the holding device of handled object.
10, the temperature-controlled process of the holding device of handled object according to claim 9 is characterized in that, by a plurality of helium zone on the described insulating barrier temperature of the wafer on the holding device of handled object is carried out subregion control.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101191063A CN101345204B (en) | 2007-07-13 | 2007-07-13 | Retaining device and temperature control method for processed body |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101191063A CN101345204B (en) | 2007-07-13 | 2007-07-13 | Retaining device and temperature control method for processed body |
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| Publication Number | Publication Date |
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| CN101345204A true CN101345204A (en) | 2009-01-14 |
| CN101345204B CN101345204B (en) | 2010-12-01 |
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| CN2007101191063A Active CN101345204B (en) | 2007-07-13 | 2007-07-13 | Retaining device and temperature control method for processed body |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101750427B (en) * | 2009-12-31 | 2011-11-16 | 中国科学院等离子体物理研究所 | Temperature controlling sample holder capable of adjusting incident ion energy and monitoring ion flux in real time |
| CN104269371A (en) * | 2014-09-01 | 2015-01-07 | 上海华力微电子有限公司 | Etching device and method |
| WO2020052598A1 (en) * | 2018-09-11 | 2020-03-19 | 上海引万光电科技有限公司 | Chemical vapor deposition apparatus |
| CN111276424A (en) * | 2018-12-04 | 2020-06-12 | 南亚科技股份有限公司 | Etching apparatus and method of operating the same |
| CN117219561A (en) * | 2023-11-09 | 2023-12-12 | 合肥晶合集成电路股份有限公司 | Method for reducing risk of crystal wafer in HARP (hybrid automatic repeat request) process |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1064983A (en) * | 1996-08-16 | 1998-03-06 | Sony Corp | Wafer stage |
| CN100382275C (en) * | 2004-10-29 | 2008-04-16 | 东京毅力科创株式会社 | Substrate mounting table, substrate processing apparatus and substrate temperature control method |
| CN100370592C (en) * | 2005-12-08 | 2008-02-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic chuck |
| CN100388458C (en) * | 2005-12-08 | 2008-05-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic chuck |
-
2007
- 2007-07-13 CN CN2007101191063A patent/CN101345204B/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101750427B (en) * | 2009-12-31 | 2011-11-16 | 中国科学院等离子体物理研究所 | Temperature controlling sample holder capable of adjusting incident ion energy and monitoring ion flux in real time |
| CN104269371A (en) * | 2014-09-01 | 2015-01-07 | 上海华力微电子有限公司 | Etching device and method |
| CN104269371B (en) * | 2014-09-01 | 2017-05-17 | 上海华力微电子有限公司 | Etching device and method |
| WO2020052598A1 (en) * | 2018-09-11 | 2020-03-19 | 上海引万光电科技有限公司 | Chemical vapor deposition apparatus |
| CN111276424A (en) * | 2018-12-04 | 2020-06-12 | 南亚科技股份有限公司 | Etching apparatus and method of operating the same |
| CN117219561A (en) * | 2023-11-09 | 2023-12-12 | 合肥晶合集成电路股份有限公司 | Method for reducing risk of crystal wafer in HARP (hybrid automatic repeat request) process |
| CN117219561B (en) * | 2023-11-09 | 2024-02-09 | 合肥晶合集成电路股份有限公司 | Method for reducing risk of crystal wafer in HARP (hybrid automatic repeat request) process |
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| Publication number | Publication date |
|---|---|
| CN101345204B (en) | 2010-12-01 |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016, building 2, block M5, No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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