CN105448776A - Pallet system used for plasma dry etching - Google Patents
Pallet system used for plasma dry etching Download PDFInfo
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- CN105448776A CN105448776A CN201410549580.XA CN201410549580A CN105448776A CN 105448776 A CN105448776 A CN 105448776A CN 201410549580 A CN201410549580 A CN 201410549580A CN 105448776 A CN105448776 A CN 105448776A
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- grapheme
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Abstract
The invention relates to the technical field of semiconductor processing and provides a pallet system used for plasma dry etching, which introduces a grapheme material or grapheme composite material layer to improve the surface heat dissipation capability and the temperature uniformity of a wafer. The pallet system comprises an aluminum pallet, helium hole, a sealing ring, a cover plate and the embedded grapheme material (or grapheme composite material) layer high in heat conductivity. The pallet system has the advantages and active effects that: the high-heat-conductivity grapheme material or grapheme composite material are used in the pallet system used for the r plasma dry etching, the instant heat dissipation capability of the wafer in the etching process is substantially improved, the temperature uniformity of the surface of the wafer is conveniently controlled, the qualified rate of etched products is improved, and the operation window of the etching process is enlarged.
Description
Technical field
The present invention relates to semiconductor processing technology field, particularly a kind of by introducing the Trayconcept of plasma dry etch that high heat conductive material improves wafer surface heat-sinking capability and improves temperature homogeneity.
Background technology
In semiconducter process process, particularly in dry plasma etch (ICP) process, the general Trayconcept that uses fixes, supports and transmit wafer (Wafer), avoids wafer in technical process, occur mobile or inconsistent phenomenon.In addition, wafer is in the whole process of etching, and pallet serves as the bottom electrode of electrode system, and by access radio frequency (RF) power supply, RF power supply can form direct current (DC) bias (DCBias) on wafer.Facilitate plasma to the etching reaction of wafer like this.Meanwhile, Trayconcept can realize temperature control, to control the uniformity of wafer engraving to wafer.
At present, prepare in graphical sapphire substrate (PSS) technique at employing ICP, the Trayconcept that etching Sapphire Substrate adopts is, metallic aluminium pallet 1 joining cover plate 4 system, as shown in figure (1).Wafer 5 to be etched is placed on aluminium pallet 1, and fixes with the cover plate 4 of aluminium or quartz material.Several airflow hole 2 is all had bottom aluminium pallet 1, in etching process, inert gas helium (He) fills the gap between Sapphire Substrate and pallet by airflow hole, tray surface has sealing ring 3, the effect of sealing ring 3 is to seal the He gas between wafer and pallet, in order to avoid He gas enters in ICP cavity and affects etch rate and uniformity.In addition, gap between chuck bearing system in pallet and ICP cavity is also filled by He gas, the effect of He gas be heat conduction that wafer surface is produced on aluminium pallet 1, and to leave in time, thus play the effect controlling wafer surface temperature and etching homogeneity.
At least there is following shortcoming in above-mentioned Trayconcept:
(1) He gas conductive coefficient is only 0.144W/m.K, the conductive coefficient of metallic aluminium is 237W/m.K, Problems existing is, when large substrate bias power etching operation, the temperature of wafer surface will continue to raise, when surface temperature exceedes glass transition temperature (Tg) of photoresist mask, it is even burnt that photoresist can produce deformation, thus cause etching abnormal phenomenon;
(2) in etching process, because of load link cause sealing effectiveness bad when, He gas leakage will cause wafer local temperature too high, thus causes wafer topography to distort, the aluminium Trayconcept of prior art to load link and sealing requirements very high, variable sector is young;
(3) clearance requirement of wafer and aluminium pallet is very narrow, and the finite volume of thus He gas filling, is unfavorable for that He gas carries out sufficient heat transfer to wafer, causes wafer surface temperature higher and skewness.
Summary of the invention
The object of the invention is to for above-mentioned the deficiencies in the prior art, a kind of Trayconcept of plasma dry etch by introducing high thermal conductivity coefficient Graphene or graphene composite material at tray surface and the back side and improve the instantaneous heat-sinking capability of wafer in etching process and improve temperature homogeneity is provided.
Graphene has high conductive coefficient, and its conductive coefficient is up to 6600W/m.K, and the conductive coefficient of argent (Ag) material more best than heat conductivility exceeds a most magnitude, exceeds more than 30 times than the conductive coefficient of aluminum metal.Graphene is introduced in the Trayconcept of dry plasma etch, to be conducive to greatly improving the instantaneous heat-sinking capability of wafer in etching process, be conducive to controlling the temperature homogeneity of wafer surface and improving the action pane of etching product qualified rate and expansion etching technics.
In order to achieve the above object, the technical solution used in the present invention is: on the basis of existing pallet processing technology compatibility, high thermal conductivity material layer is inlayed at tray upper surface and lower surface, described high thermal conductivity material layer can be Graphene or graphene composite material material layer 6, as shown in Figure 2.
As seen from the above technical solution provided by the invention, Trayconcept of the present invention, because Graphene has the high capacity of heat transmission, be conducive to the heat that wafer surface produces in etching process and left rapidly, and be conducive to the temperature homogeneity improving wafer surface.In addition, when He gas leakage or He gas are for quantity not sufficient, the high thermal conduction characteristic of Graphene also can maintain the lower temperature of wafer surface and temperature homogeneity well, is thus conducive to improving product quality and expanding production action pane.Especially, grapheme material Trayconcept of the present invention, is conducive to the gap that reduces further between wafer and pallet and improves wafer engraving speed, and then improves the production capacity of plasma etching equipment.
Accompanying drawing explanation
The structural representation that figure (1) is Trayconcept in prior art;
The structural representation that figure (2) is Trayconcept of the present invention;
The schematic diagram that figure (3) is holding tray surface structure of the present invention and graphene molecules structure.
In figure: 1. aluminium pallet; 2. airflow hole; 3. sealing ring; 4. cover plate; 5. wafer; 6. grapheme material (or graphene composite material) layer.
Embodiment
Below in conjunction with accompanying drawing, further describe the embodiment of Trayconcept of the present invention, but be not used for limiting the scope of the invention.
Reference diagram (2) and figure (3).The present invention is for improving wafer heat-sinking capability and the Trayconcept improving temperature homogeneity, and core innovation is that the upper and lower surface of aluminium pallet 1 introduces grapheme material (or graphene composite material) layer 6 of high thermal conductivity coefficient.Described grapheme material (or graphene composite material) layer 6 is the single-layer graphene (or graphene composite material) of multiple-layer stacked and embeds aluminium tray surface.Upper surface grapheme material (or graphene composite material) layer 6, its thickness range is between 0.1mm ~ 1mm, covering part overlaps with wafer placement area, and carry out perforate process on grapheme material (or graphene composite material) layer 6 surface, hole dimension is consistent with the perforate of aluminium pallet with position, object is to allow He gas enter the gap of wafer and grapheme material (or graphene composite material) layer 6 by airflow hole, arrange sealing ring 3 in grapheme material (or graphene composite material) layer 6 outmost turns, its effect enters to seal to He gas.The effect of He gas is transmitted to graphene layer with making the even heat of wafer surface generation in etching process, and the effect of grapheme material (or graphene composite material) layer 6 rapidly heat is delivered to aluminium pallet.Inlay grapheme material (or graphene composite material) layer 6 in aluminium pallet lower surface entirety, its thickness range is 0.1mm ~ 5mm, simultaneously by total pore demand number perforate.The effect of lower surface graphene layer, will be delivered to the transfer of heat of aluminium pallet to cools system rapidly, thus realize the instantaneous transfer of heat, the temperature of maximum maintenance wafer in etching process and uniformity thereof, particularly when there is He gas and revealing poor sealing, still can keep good heat-sinking capability, improve the uniformity of Temperature Distribution in etching process, thus improve the uniformity of product.
Consider grapheme material stability, durability in actual production, particularly improve the Acceptable life of this Trayconcept, it is also feasible for carrying out suitably processing process to grapheme material, and the ability adopting graphene composite material to improve anti-plasma bombardment and chemical erosion further is also part involved in the present invention.
The Trayconcept of a kind of plasma dry etch of the present invention, described cover plate 4, be made up of quartz material or metallic aluminum material, cover plate 4 and sealing ring 3 are under outside twisting force, to the sealing gap between wafer 5 and pallet 1, in order to avoid refrigerating gas He gas enters in ICP cavity and affects wafer engraving speed and uniformity.
The Trayconcept of a kind of plasma dry etch of the present invention, not only can be applied to sapphire material dry etch process, can also be applied in the dry etch process of such as gallium nitride material, silicon materials and carbofrax material.
The above; only in order to technical conceive of the present invention and feature are described; its object is to allow everybody understand content of the present invention and to be implemented; can not limit the scope of the invention with this; the equivalence change that any those skilled in the art of being familiar with do according to Spirit Essence of the present invention or modification aspect, be all encompassed in protection scope of the present invention.
Claims (4)
1. the Trayconcept of a plasma dry etch, comprise aluminium pallet (1), helium hole (2), sealing ring (3), cover plate (4), it is characterized in that the upper surface of aluminium pallet (1) and lower surface all inlay high thermal conductivity material layer (6).
2. the Trayconcept of a kind of plasma dry etch according to claim 1, is characterized in that described high thermal conductivity material (6) is grapheme material or graphene composite material.
3. the Trayconcept of a kind of plasma dry etch according to claim 1, it is characterized in that described upper surface grapheme material (or graphene composite material) layer thickness scope is 0.1mm ~ 1mm, lower surface grapheme material (or graphene composite material) layer thickness scope is 0.1mm ~ 5mm.
4. Trayconcept according to claim 1, is characterized in that this Trayconcept not only can be applied to sapphire material dry etch process, can also be applied in the dry etch process of such as gallium nitride material, silicon materials and carbofrax material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410549580.XA CN105448776A (en) | 2014-10-16 | 2014-10-16 | Pallet system used for plasma dry etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410549580.XA CN105448776A (en) | 2014-10-16 | 2014-10-16 | Pallet system used for plasma dry etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105448776A true CN105448776A (en) | 2016-03-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410549580.XA Pending CN105448776A (en) | 2014-10-16 | 2014-10-16 | Pallet system used for plasma dry etching |
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| CN (1) | CN105448776A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108231657A (en) * | 2017-12-22 | 2018-06-29 | 东莞市中图半导体科技有限公司 | A kind of pallet apparatus and stowage of graphical sapphire substrate etching |
| CN111312630A (en) * | 2020-03-05 | 2020-06-19 | 锐捷光电科技（江苏）有限公司 | Method for improving etching uniformity of single sealing leather ring |
| CN113594012A (en) * | 2021-07-28 | 2021-11-02 | 柯良节 | Plasma etching anode plate |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412176A (en) * | 2010-09-26 | 2012-04-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pallet and wafer processing equipment possessing the same |
| CN202434478U (en) * | 2011-12-28 | 2012-09-12 | 华南理工大学 | Tray for improving uniformity of film prepared by dry etching |
| CN103208445A (en) * | 2012-01-17 | 2013-07-17 | 游利 | Machining technology for tray for light emitting diode (LED) etching machine |
| CN104051316A (en) * | 2014-06-23 | 2014-09-17 | 厦门市三安光电科技有限公司 | Graphite bearing tray capable of regulating and controlling local temperature field |
-
2014
- 2014-10-16 CN CN201410549580.XA patent/CN105448776A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412176A (en) * | 2010-09-26 | 2012-04-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pallet and wafer processing equipment possessing the same |
| CN202434478U (en) * | 2011-12-28 | 2012-09-12 | 华南理工大学 | Tray for improving uniformity of film prepared by dry etching |
| CN103208445A (en) * | 2012-01-17 | 2013-07-17 | 游利 | Machining technology for tray for light emitting diode (LED) etching machine |
| CN104051316A (en) * | 2014-06-23 | 2014-09-17 | 厦门市三安光电科技有限公司 | Graphite bearing tray capable of regulating and controlling local temperature field |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108231657A (en) * | 2017-12-22 | 2018-06-29 | 东莞市中图半导体科技有限公司 | A kind of pallet apparatus and stowage of graphical sapphire substrate etching |
| CN108231657B (en) * | 2017-12-22 | 2023-08-18 | 广东中图半导体科技股份有限公司 | Pallet device for etching patterned sapphire substrate and loading method |
| CN111312630A (en) * | 2020-03-05 | 2020-06-19 | 锐捷光电科技（江苏）有限公司 | Method for improving etching uniformity of single sealing leather ring |
| CN113594012A (en) * | 2021-07-28 | 2021-11-02 | 柯良节 | Plasma etching anode plate |
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Application publication date: 20160330 |
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