TWI384622B - 自我保護之功率元件結構及製造方法 - Google Patents

自我保護之功率元件結構及製造方法 Download PDF

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TWI384622B
TWI384622B TW097100292A TW97100292A TWI384622B TW I384622 B TWI384622 B TW I384622B TW 097100292 A TW097100292 A TW 097100292A TW 97100292 A TW97100292 A TW 97100292A TW I384622 B TWI384622 B TW I384622B
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power device
semiconductor power
overcurrent protection
protection layer
layer
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TW097100292A
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TW200832708A (en
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Hebert Francois
Sun Ming
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Alpha & Omega Semiconductor
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Description

自我保護之功率元件結構及製造方法
本發明一般係有關於一種元件結構及保護元件的方法。更特別的是，本發明係有關於一種改良的電路結構，以及使用具有正溫度係數之導電材料來保護功率元件免於電性短路所引起的過電流之方法。
在高功率的情況下，功率元件常常會因為”短路”(short circuit)現象而導致失效，也會對於使用功率元件的系統中的其他元件造成損傷。因此，功率元件最好可以於開路(open circuit)狀態中失效。當然，如果可以完全避免失效的發生是更好的。而失效的防止，係可以藉由整合作為部份元件或元件外側之保護電路來達成。如第1A圖所繪示，一種運用於半導體元件中的特殊保護方法，係在連接墊(bond pads)接合之前，將可熔性連接裝置(fusible link)，如金屬熔線或多晶矽熔線，配置於內導線連接金屬圖案之中。然而，如第1B圖所繪示的結構卻在超高電流應用上具有限制，由於需要多條熔線與多個連接墊，使得晶粒尺寸增加，將會產生額外的費用，並對於製造與運作上皆造成衝擊。使用多條熔線與多個連接墊所伴隨著的另一種缺點，就是在於這種例子並不是所有的熔線都會在過電流情況的期間吹離(blow open)，而熔線沒有吹離的元件之主動區域就會遭受損害。再者，額外的保護電路，譬如金屬熔線、多晶矽熔線或其他的”故障旁路”(fail－open)的保護電路，經常會不利於元件或系統的運作。這種熔線保護也具有一種缺點，就是這樣的保護並非為可復式(re－settable)，一旦熔線損壞，熔線的連接也會遭受破壞，甚而會導致過電流情況跟著消失。
為了克服這些限制，於是可以利用正溫度係數(PTC)的材料作為可復式過電流保護元件。各種習知的正溫度係數材料，譬如有高分子正溫度係數材料。而在市面上的已商業化產品則有”多晶矽熔線”(Polyfuse)、”多晶矽開關”(Polyswitch)以及”多開關”(Multiswitch)。這些產品可以用來作為一份內嵌有碳粒子的塑膠製品。當塑膠製品處於冷卻時，全部的碳粒子會彼此接觸，在元件中形成導電路徑。當塑膠製品加熱時，它會膨脹，促使碳粒子分開，並使得元件的電阻快速地提升。如同鈦酸鋇(BaTiO3 )電晶體，此種元件具有高度非線性電阻/溫度響應，並且可作為開關，而不是作為比例溫度測量器。正溫度係數的應用乃揭露於美國專利第4,238,812號，並且有各種資料表格幫助提供了可作為商業產品的正溫度係數材料。此外，正溫度係數材料的效用也已經被證實了，當溫度提升時，正溫度係數材料的電阻會提升到高達五倍大。
即使正溫度係數材料對於電子元件之過電流保護的應用是有名的，當正溫度係數材料實際使用時，仍然有許多技術上的限制與困難。正溫度係數保護電路通常可藉由如第1C圖所示連接至負載的保護電路元件來達成，此保護電路元件乃包含有正溫度係數材料，且正溫度係數材料具有隨著溫度而提高的電阻。然而，為了達成元件保護，通常需要利用自我加熱現象(self－heating)來提高溫度，而且，需要提供I2 R電壓降於元件之內，並透過特殊的安裝來避免散熱片可能會減低元件保護的效用。在此同時，較高的電阻可能會導致較高的自我加熱現象而達到較好的保護，然而，也會對於此功率系統產生負面的衝擊。同樣地，還可能會藉由增加越多的電路元件來提供額外的熱源以加熱正溫度係數材料，但是，這些增加的電路元件將會造成電流限制保護並佔據大量的體積。
因此，在電路設計與元件製作的領域中仍然存在著一種需求，有賴於提供一種新穎且改良的結構與製造方法，用以解決前述困難。特別的是，仍然有需要提供一種嶄新與改良的結構達成正溫度係數保護，使得前述的各種限制與困難得以解決。
因此，本發明一方面在於提供一種嶄新且改良的可復式正溫度係數(PTC)保護結構，電子元件內的溫度提升會自動加熱正溫度係數材料，再者，本發明是以讓寄生電阻的增加為最小的情況下來執行正溫度係數保護，藉以克服前述傳統正溫度係數保護所造成的諸多困難與限制。
更特別的是，本發明之另一方面在於提供一種嶄新且改良的正溫度係數保護結構，其正溫度係數保護係和在電子元件內的熱產生元件或區域具有大的熱耦合，同時，這樣的耦合乃是以讓耦合或寄生電阻的增加為最小的情況下來提供。
本發明之另一方面在於提供一種嶄新且改良的正溫度係數保護結構，其正溫度係數保護結構乃可以標準封裝技術而便利地執行，因而可以減少不受歡迎的製造費用所造成之衝擊。
本發明之另一方面在於提供一種嶄新的與改良的正溫度係數保護結構，其正溫度係數保護結構可以不用增加封裝尺寸來執行，因而可以減少潛在的不受歡迎的製造費用所造成之衝擊。
簡單來說，本發明之一個較佳實施例係揭露一種垂直式半導體功率元件，其包含一半導體基板，且半導體基板所具有的一上表面與一下表面係構成一垂直電流路徑，用以引導電流流通此垂直電流路徑。此半導體功率元件更包含一過電流保護層，是由構成部份的垂直電流路徑之材料所組成，用以限制電流通過過電流保護層。在一個範例中，過電流保護層是由可復式電流限制材料(resetable current limiting material)所組成。在另一個範例中，過電流保護層是由正溫度係數(positive temperature coefficient；PTC)電阻之材料所組成。在另一個範例中，過電流保護層是黏著於下表面。在另一個範例中，過電流保護層是黏著於上表面。在另一個範例中，過電流保護層則設置於半導體基板與導電板之間。在另一個範例中，過電流保護層設置於半導體基板與導電板之間，且導電板是作為半導體功率元件的一個導線架。在另一個範例中，過電流保護層是由正溫度係數(positive temperature coefficient；PTC)電阻之材料所組成，用來作為一可復式電流限制層。在另一個範例中，過電流保護層乃予以圖案化，用以使元件保護效果達到最佳化。在另一個範例中，垂直式半導體功率元件包含有一具有前述下表面之金氧半場效電晶體(MOSFET)晶片，此下表面是作為用以接觸過電流保護電路層的一個汲極。在另一個範例中，垂直式半導體功率元件包含有一具有前述下表面之底部源極型金氧半場效電晶體(bottom－source MOSFET)晶片，此下表面是作為用以接觸過電流保護層的一個源極。
本發明更揭露一種具有整合的過電流保護之電子元件的製造方法。此製造方法乃包含有設置一過電流保護層之步驟，過電流保護層是由電流限制材料所構成。此製造方法更包含連接一半導體晶片至過電流保護層之第一側之步驟，以及包含連接一導電板至過電流保護層之第二側之步驟。
以下將可透過閱讀本發明之較佳實施例的詳細描述與說明各個圖式，使本發明之技術思想更被突顯，以了解與獲得本發明之這些和其他目的。
請參照第2圖，係繪示一種嶄新及改良的半導體功率元件100之封裝結構之側面剖視圖。半導體功率元件100可譬如為一種標準的垂直式雙重擴散金氧半(DMOS)之功率金氧半場效電晶體(MOSFET)，其安裝在一印刷電路板(PCB)105上。印刷電路板105承載著一導線架135，並且，於導線架135的右邊則包含一閘極端110，用以連接到晶片120上之一閘極墊(沒有特別顯示出來)，於導線架135的左邊包含一源極端115，用以連接到晶片120上之一源極金屬(沒有特別顯示出來)。而閘極端110與源極端115到晶片120之間的連接是透過複數連接線(bond wires)125來達成。晶片120可譬如為功率金氧半場效電晶體(MOSFET)，具有設於底部之一汲極，並設置於一正溫度係數(positive temperature coefficient；PTC)層130上，來連接到位於導線架135中心以作為汲極導線的晶粒墊。然後，利用一封裝膠體(molding compound)140容納並保護整個封裝結構。
在金氧半場效電晶體晶片120、正溫度係數層130與晶粒墊之間的連接，係可以藉由焊接用錫膏(solder paste)、導電樹脂或其他導電材料的協助而達成。在一個實施例中，正溫度係數層130是一種正溫度係數薄膜，具有導電層形成於正溫度係數層之表面，以幫助晶粒黏著過程。此導電金屬層位於正溫度係數薄膜的頂部與上方，可以利用濺射、蒸鍍或電鍍方式形成於正溫度係數材料上，並可以為銅、金或者和晶粒黏著銲錫與樹脂相匹配之其他表面。在另一個實施例中，是使用正溫度係數層130於一金氧半場效電晶體晶圓的背面，於金氧半場效電晶體晶圓切割(dicing)為個別的晶片之前，金氧半場效電晶體晶圓乃包含複數金氧半場效電晶體晶片120。在另一個實施例中，是在晶粒黏著之前，使用正溫度係數層130於一個導線架135的晶粒墊上。在另一個實施例中，正溫度係數層130為一種具有正溫度係數電阻材料的導電樹脂，譬如，一種導電樹脂與正溫度係數材料之粉末的混合物。
當元件運作時，會在位於金氧半場效電晶體晶片120上表面與下表面的源極與汲極之間形成一垂直電流路徑。此垂直電流路徑更垂直地延伸透過正溫度係數層130，作為對於金氧半場效電晶體晶片120串聯之一可變電阻。由金氧半場效電晶體晶片120所產生的熱會使得正溫度係數層130的電阻產生變化。在正常運作下，金氧半場效電晶體晶片120所產生的熱會有特定量透過封裝膠體140與導線架135而逸散於周遭。元件是運作於熱平衡條件下並維持於正常作業溫度，並將正溫度係數層130的阻抗(impedance)設計成維持為低阻抗。當發生過電流情況時，金氧半場效電晶體晶片120則會產生額外的熱，而引起正溫度係數層130的溫度提升，導致電阻提高一直到會縮小電流的程度。在消除過電流情況之後，溫度將會回到正常操作溫度，並且正溫度係數層130的電阻會回到低電阻。因此，保護是可復性的。由於電阻會隨著增加的功率逸散程度而提高，否則，會隨著流經被保護元件的電流的增加而提高，而不是隨著流經自我加熱的正溫度係數層材料本身之電流，正溫度係數層材料可以於正常操作溫度下具有較低的電阻，並隨著來自被保護元件之熱的產生，來增加它的電阻。另外，當在自我保護的案例中，正溫度係數層材料並不需要具有高的初始電阻，即得以有效執行。再者，元件可以維持緊密的封裝結構，而不需要提高體積或增加複雜度。
如圖所示的正溫度係數層130可以使用包含摻雜譬如鈦酸鋇(barium titanate)之陶瓷的材料來製作。導電高分子則可以使用譬如具有特殊的填充物散佈於高分子內。這樣的正溫度係數材料已經成功使用於非常薄的薄膜應用中來製造熔線，譬如大約0.5微米的薄膜厚度之薄膜應用。元件保護的執行係可以使用正溫度係數材料佈線為基礎予以最佳化。前述所揭露的利用設置正溫度係數材料或薄膜作為部份電或熱傳導路徑的結構之應用，乃可以延伸到多種設備的技術。如第2圖所示之封裝用導線架，可以將正溫度係數層嵌入於晶粒與導線架晶粒－墊(die－pad)區域之間。對於晶片安裝基板封裝(Chip－On－Board；COB)裝置，則可以將正溫度係數層插入於晶粒與正溫度係數材料之間。在晶片尺寸封裝(chip－size package；CSP)的封裝結構中，可以將正溫度係數層插入於晶粒與晶片尺寸封裝之封裝結構的封裝部分之間。再者，其他種類的電流限制材料，譬如相變化(phase change)材料，當由高電流密度所支撐時，可以從電流傳導相改變為電流限制相，不需要任何結構改良，即可以容易地操作去取代晶片尺寸封裝。
第3圖係繪示一種具有正溫度係數圖案的功率半導體元件100’之側面剖視圖，用以使元件保護達到最佳化，並具有增加的電阻因此導致熱耦合與保護的提高。半導體功率元件100’封裝結構乃相似於第2圖所示的結構，而目前的半導體功率元件100’封裝結構除了將正溫度係數層130予以圖案化為三個區段130－1、130－2與131－3，而提高了在功率金氧半場效電晶體(MOSFET)晶片120底部的汲極與導線架135之間的連接之電阻。正溫度係數層130的電阻之增加會提高熱耦合，而隨著正溫度係數層130的溫度提高將快速地增加了電阻，當短路情況發生時可以更有效地達到限制電流，因此，提供了較佳的元件保護。正溫度係數層130也可以被圖案化為”甜甜圈(dount)”形狀、條紋或格子等等圖案。
藉由正溫度係數的設置作為具有特定電阻之部份電傳導路徑，可以使用正溫度係數層或正溫度係數材料於蕭特基二極體(Schottky diodes)，來保護蕭特基二極體，可以在一些應用上得以熱逃開(run－sway)。這些應用可包含顯示產品之升壓轉換器(boos converter)，當執行接腳對接腳(pin－to－pin)測試的時候可以避免火災。許多功率電路包含但不限制於升壓與降壓功率電路、同步與非同步降壓轉換器、調節器(regulators)、低壓差穩壓器(LDO)等等，也可以受益於實施本發明所揭露之一種具有正溫度係數層或熔線層設置於電或熱傳導路徑之結構所達到的保護效果。此正溫度係數層也可以被應用於標準的垂直式雙重擴散金氧半(DMOS)和垂直式蕭特基二極體、底部源極型橫向雙重擴散金氧半(LDMOS)、底部陽極型蕭特基元件、隔離柵雙極性電晶體(IGBT)等等。
第4A圖與第4B圖係繪示一種使用本發明所提供之正溫度係數保護結構來執行的降壓轉換器(buck converter)200之側面剖視圖與電路圖。降壓轉換器200乃安裝於一印刷電路板(PC board)205上。降壓轉換器200包含有一蕭特基二極體210，此蕭特基二極體210具有一底部陰極215與頂部陽極(圖中未特別繪示)，頂部陽極透過一陽極導線220連接至一導線架之一接地端。另外，降壓轉換器200更包含一高壓側場效電晶體(high－side FET)230，場效電晶體(FET)230具有一底部源極235與一頂部汲極(圖中未特別繪示)，頂部汲極透過多條連接導線240連接至一導線架之一Vcc/Vin端245。並且，場效電晶體(FET)230也包含有一閘極墊電性連接至一導線架(圖中未示)之一閘導線。在西元2006年7月28日所申請之美國專利申請號第11/495,803號中，係揭露場效電晶體(FET)230之詳細說明與製作方法，在此請一併參照。蕭特基二極體210的底部陰極215與高壓側場效電晶體(FET)230的底部源極235，乃透過一正溫度係數層250連接至由印刷電路板(PC board)205所直接承載之導線架之一輸出端260。由於正溫度係數層250是部份電和熱的傳導路徑，當傳導電流自動地增加將會導致溫度的提昇，因而造成正溫度係數層250之電阻的增加。因此，降壓轉換器200是以正溫度係數層250所保護，此正溫度係數層250限制了可以通過蕭特基二極體210與場效電晶體230的電流。
第5A圖與第5B圖係繪示一種使用本發明所提供之正溫度係數保護結構來執行的升壓轉換器(booster converter)之側面剖視圖與電路圖。升壓轉換器300乃安裝於一印刷電路板(PC board)305上。升壓轉換器300包含有一蕭特基二極體310，此蕭特基二極體310具有一底部陽極315與頂部陰極(圖中未特別繪示)，頂部陰極透過一陰極與源極/汲極導線320連接至一導線架之一Vcc端325。而且，升壓轉換器300更包含一低壓側場效電晶體(low－side FET)330，場效電晶體(FET)330具有一底部汲極335與一頂部源極與閘極(圖中未特別繪示)，頂部源極與閘極乃透過多條連接導線340連接至一導線架之一接地端345。場效電晶體(FET)330也包含有一閘極墊電性連接至一導線架(圖中未示)之一閘導線。在西元2006年7月28日所申請之美國專利申請號第11/495,803號中，係揭露場效電晶體(FET)330之詳細說明與製作方法，在此請一併參照。蕭特基二極體310的底部陽極315與低壓側場效電晶體(FET)330的底部汲極335，是透過一正溫度係數層350連接至直接安裝於印刷電路板(PC board)305之導線架之一輸出端360。由於正溫度係數層350是部份電和熱的傳導路徑，當傳導電流自動地增加將會導致溫度的提昇，於是造成正溫度係數層350之電阻的增加。因此，包含有蕭特基二極體與低壓側場效電晶體之升壓轉換器300是由正溫度係數層350所保護，此正溫度係數層350係限制了可以通過蕭特基二極體310與場效電晶體330的電流。
第6A－1圖與第6A－2圖係分別繪示一種使用本發明所提供之正溫度係數層350保護來執行的晶片級(CSP)封裝之第一種結構的剖視圖與底視圖。在此範例中，封裝結構400包含一晶片級熔線場效電晶體(CSP－fuse－FET)410，晶片級熔線場效電晶體410具有和一正溫度係數保護層420相接觸之一汲極，此正溫度係數保護層420乃插入於場效電晶體410之汲極與導電板425之間，而導電板425可譬如為印刷電路板(PCB)或金屬。晶片級熔線場效電晶體410具有數個焊錫凸塊(solder bumps)430連接至場效電晶體410之源極與閘極，且封裝結構400更包含由導電板425所承載之球閘陣列(ball grid array)440。如第6A－1圖與第6A－2圖所示，此結構為一種在封裝”外蓋(lid)”上的正溫度係數結構。第6B－1圖與第6B－2圖係分別繪示一種使用本發明所提供之正溫度係數保護來執行的晶片級(CSP)封裝之第二種結構的剖視圖與底視圖。在此範例中，封裝結構400’包含一晶片級熔線場效電晶體(CSP－fuse－FET)460，晶片級熔線場效電晶體460具有和正溫度係數保護層470相接觸之一汲極，此正溫度係數保護層470設置於場效電晶體460之汲極與印刷電路板(PC board)475之間。並且，晶片級熔線場效電晶體460具有數個焊錫凸塊(solder bumps)480連接至場效電晶體460之源極與閘極，且封裝結構400’更包含由導電板475所承載之球閘陣列(ball grid array)490。如第6B－1圖與第6B－2圖所示，此結構為一種提供在顧客印刷板外側(customer board side)上的正溫度係數結構。
正溫度係數保護的實施可以進一步延伸為設置於導電層的兩側之正溫度係數材料之結構。這樣的結構將幫助使用導電樹脂或焊錫貼附之設備。再者，譬如為金屬、銅、鋁、鈦－鎳－銀(Ti－Ni－Ag)等等之導電薄膜，可以利用濺鍍沉積、蒸鍍、或電鍍方式來形成。除了使用正溫度係數基板於晶粒上加以保護，正溫度係數材料可以被添加到晶粒貼附材料，譬如添加到樹脂，以簡化實施方式。另外，在晶圓切割之前，矽晶圓可以接合正溫度係數薄膜。這樣的步驟得以免除用以分割保護主動元件之正溫度係數材料的設備，如此將明顯簡化了製作程序。
根據上述說明與圖式，本發明更揭露了一種半導體功率元件，其包含有至少二個半導體晶片，半導體晶片乃具有多個表面，用以傳導於作為電流傳導路徑之至少二表面之間的電流。半導體功率元件更包含一過電流保護層，過電流保護層是由於至少一半導體晶片之部分電流傳導路徑所構成，其中電流保護層是由電流限制材料所組成。在一個範例中，多個半導體晶片是以內導線連接，以作為由過電流保護層所保護的一種多晶片模組(multiple－chip module；MCM)。在另一個範例中，多個半導體晶片包含一功率金氧半場效電晶體(MOSFET)晶片與一作為降壓轉換器(buck converter)之二極體，且二極體是由過電流保護層所保護。在另一個範例中，多個半導體晶片包含一功率金氧半場效電晶體(MOSFET)晶片與一作為升壓轉換器(booster converter)之二極體，且二極體是由過電流保護層所保護。在另一個範例中，過電流保護層是由可復式電流限制材料所組成。在另一個範例中，過電流保護層是由正溫度係數(PTC)之電阻材料所組成。在另一個範例中，過電流保護層是設置於半導體晶片與用以承載半導體功率元件之導電板之間。在另一個範例中，過電流保護層是設置於半導體基板與作為半導體功率元件之導線架的導電板之間。在另一個範例中，過電流保護層是設置於半導體晶片與用來被支撐於印刷電路板(PCB)上，以支撐並連接到半導體功率元件之導電板之間。
雖然本發明以前述之實施例揭露如上，然其並非用以限定本發明。在不脫離本發明之精神和範圍內，所為之更動與潤飾，均屬本發明之專利保護範圍。關於本發明所界定之保護範圍請參考所附之申請專利範圍。
100‧‧‧半導體功率元件
100’‧‧‧功率半導體元件
105‧‧‧印刷電路板
110‧‧‧閘極端
115‧‧‧源極端
120‧‧‧晶片
125‧‧‧連接線
130‧‧‧正溫度係數層
130-1‧‧‧區段
130-2‧‧‧區段
130-3‧‧‧區段
135‧‧‧導線架
140‧‧‧封裝膠體
200‧‧‧降壓轉換器
205‧‧‧印刷電路板
210‧‧‧蕭特基二極體
215‧‧‧底部陰極
220‧‧‧陽極導線
230‧‧‧高壓側場效電晶體
235‧‧‧底部源極
240‧‧‧連接導線
245‧‧‧Vcc/Vin端
250‧‧‧正溫度係數層
260‧‧‧輸出端
300‧‧‧升壓轉換器
305‧‧‧印刷電路板
310‧‧‧蕭特基二極體
315‧‧‧底部陽極
320‧‧‧陰極與源極/汲極導線
325‧‧‧Vcc端
330‧‧‧低壓側場效電晶體
335‧‧‧底部汲極
340‧‧‧連接導線
345‧‧‧接地端
350‧‧‧正溫度係數層
360‧‧‧輸出端
400‧‧‧封裝結構
400’‧‧‧封裝結構
410‧‧‧晶片級熔線場效電晶體
420‧‧‧正溫度係數保護層
425‧‧‧導電板
430‧‧‧焊錫凸塊
440‧‧‧球閘陣列
460‧‧‧晶片級熔線場效電晶體
470‧‧‧正溫度係數保護層
475‧‧‧印刷電路板
480‧‧‧焊錫凸塊
第1A圖~第1C圖係繪示先前技術中用以保護元件免於由於短路所造成之傷害之不同的過電流保護實施態樣之結構示意圖；第2圖係繪示一種使用本發明所提供之正溫度係數保護來執行的標準的垂直式雙重擴散金氧半(DMOS)之功率金氧半場效電晶體(MOSFET)之側面剖視圖；第3圖係繪示一種使用本發明所提供之可選擇的正溫度係數保護來執行的標準的垂直式雙重擴散金氧半(DMOS)之功率金氧半場效電晶體(MOSFET)之側面剖視圖，此正溫度係數保護具有經圖案化的正溫度係數層，用以提高電阻；第4A圖係繪示一種使用本發明所提供之正溫度係數保護來執行的降壓轉換器(buck converter)之側面剖視圖，以及第4B圖係繪示第4A圖之一種電路圖；第5A圖係繪示一種使用本發明所提供之正溫度係數保護來執行的升壓轉換器(booster converter)之側面剖視圖，以及第5B圖係繪示第5A圖之一種電路圖；第6A-1圖與第6A-2圖係分別繪示一種使用本發明所提供之設在封裝外蓋上的正溫度係數保護來執行的晶片級(CSP)封裝之剖視圖與底視圖；以及第6B-1圖與第6B-2圖係分別繪示一種使用本發明所提供之設在顧客 印刷板外側上的正溫度係數保護來執行的晶片級(CSP)封裝之剖視圖與底視圖。
100‧‧‧半導體功率元件
105‧‧‧印刷電路板
110‧‧‧閘極端
115‧‧‧源極端
120‧‧‧晶片
125‧‧‧連接線
130‧‧‧正溫度係數層
135‧‧‧導線架
140‧‧‧封裝膠體

Claims (27)

  1. 一種垂直式半導體功率元件，其包含：一半導體基板，具有一上表面與一下表面，該上表面與該下表面係構成一垂直電流路徑，用以引導一電流流通該垂直電流路徑；以及一過電流保護層，由構成部分該垂直電流路徑之一材料所組成，用以限制一電流通過該過電流保護層，該過電流保護層上具有一導電薄膜，可利用濺鍍沉積、蒸鍍、或電鍍方式形成於該過電流保護層上，以作為該垂直式半導體功率元件之電極。
  2. 如申請專利範圍第1項所述之垂直式半導體功率元件，其中該過電流保護層係由一可復式電流限制材料(resetable current limiting material)所組成。
  3. 如申請專利範圍第1項所述之垂直式半導體功率元件，其中該過電流保護層係由一正溫度係數(positive temperature coefficient；PTC)電阻之材料所組成。
  4. 如申請專利範圍第1項所述之垂直式半導體功率元件，其中該過電流保護層係黏著於該下表面。
  5. 如申請專利範圍第1項所述之垂直式半導體功率元件，其中該過電流保護層黏著於該上表面。
  6. 如申請專利範圍第1項所述之垂直式半導體功率元件，其中該過電流保護層係設置於該半導體基板與一導電板之間。
  7. 如申請專利範圍第1項所述之垂直式半導體功率元件，其中該過電流保護層係設置於該半導體基板與一導電板之間，該導電板係作為該半導體功率元件之一導線架。
  8. 如申請專利範圍第1項所述之垂直式半導體功率元件，其中該過電流保護層係由一樹脂(epoxy)與一正溫度係數(positive temperature coefficient；PTC)電阻之材料所組成，以作為一可 復式電流限制層。
  9. 如申請專利範圍第1項所述之垂直式半導體功率元件，其中該過電流保護層係被圖案化，用以使一元件保護效果達到最佳化。
  10. 如申請專利範圍第1項所述之垂直式半導體功率元件，其中該垂直式半導體功率元件包含一具有該下表面之金氧半場效電晶體(MOSFET)晶片，該下表面係作為用以接觸該過電流保護層之一汲極。
  11. 如申請專利範圍第1項所述之垂直式半導體功率元件，其中該垂直式半導體功率元件包含一具有該下表面之底部源極型金氧半場效電晶體(bottom-source MOSFET)晶片，該下表面係作為用以接觸該過電流保護層之一源極。
  12. 一種半導體功率元件，其包含：至少二半導體晶片，具有複數表面，用以引導一電流導通於作為一電流傳導路徑的至少二該表面之間；以及一過電流保護層，構成部分該電流傳導路徑於至少一該半導體晶片中，其中該電流保護層係以一電流限制材料來設置，該過電流保護層上具有一導電薄膜，可利用濺鍍沉積、蒸鍍、或電鍍方式形成於該過電流保護層上，以作為該半導體功率元件之電極。
  13. 如申請專利範圍第12項所述之半導體功率元件，其中該至少二半導體晶片係作內導線連接(interconnected)，以作為由該過電流保護層所保護之一多晶片模組(multiple-chip module；MCM)。
  14. 如申請專利範圍第12項所述之半導體功率元件，其中該至少二半導體晶片包含一金氧半場效電晶體(MOSFET)晶片與一二極體，以作為由該過電流保護層所保護之一降壓轉換器(buck converter)。
  15. 如申請專利範圍第12項所述之半導體功率元件，其中該至少二半導體晶片包含一金氧半場效電晶體(MOSFET)晶片與一二極體， 以作為由該過電流保護層所保護之一升壓轉換器(booster converter)。
  16. 如申請專利範圍第12項所述之半導體功率元件，其中該過電流保護層係由一可復式電流限制材料(resetable current limiting material)所組成。
  17. 如申請專利範圍第12項所述之半導體功率元件，其中該過電流保護層係由一正溫度係數(positive temperature coefficient；PTC)電阻之材料所組成。
  18. 如申請專利範圍第12項所述之半導體功率元件，其中該過電流保護層係由一樹脂(epoxy)與一正溫度係數(positive temperature coefficient；PTC)電阻之材料所組成，以作為一可復式電流限制層。
  19. 如申請專利範圍第12項所述之半導體功率元件，其中該過電流保護層係設置於該半導體晶片與一導電板之間，該導電板係用以承載該半導體功率元件。
  20. 如申請專利範圍第12項所述之半導體功率元件，其中該過電流保護層係設置於該半導體晶片與一導電板之間，該導電板係作為該半導體功率元件之一導線架。
  21. 如申請專利範圍第12項所述之半導體功率元件，其中該過電流保護層係設置於該半導體晶片與一導電板之間，該導電板係承載於一印刷電路板(printed circuit board；PCB)上，以承載並連接該半導體功率元件。
  22. 一種可復式過電流自我保護之半導體功率元件之製造方法，其步驟包含：設置一過電流保護層，該過電流保護層係由一電流限制材料所構成；利用濺鍍沉積、蒸鍍、或電鍍方式形成一導電薄膜於該過電流保護 層上，以作為該可復式過電流自我保護之半導體功率元件之電極；連接一半導體晶片至該過電流保護層之一第一側；以及連接一導電板至該過電流保護層之一第二側。
  23. 如申請專利範圍第22項所述之可復式過電流自我保護之半導體功率元件之製造方法，更包含一提供一正溫度係數(PTC)材料形成層作為該過電流保護層之步驟。
  24. 如申請專利範圍第22項所述之可復式過電流自我保護之半導體功率元件之製造方法，更包含一提供一導電樹脂與一正溫度係數(PTC)材料混合之形成層作為該過電流保護層之步驟。
  25. 如申請專利範圍第22項所述之可復式過電流自我保護之半導體功率元件之製造方法，更包含一使用一層過電流保護材料於一導線架之一晶粒墊之步驟於附著晶粒之前。
  26. 如申請專利範圍第22項所述之可復式過電流自我保護之半導體功率元件之製造方法，更包含一使用一層過電流保護材料於一晶粒之下表面之步驟於附著晶粒之前。
  27. 如申請專利範圍第22項所述之可復式過電流自我保護之半導體功率元件之製造方法，更包含一使用一層過電流保護材料於一晶圓之下表面之步驟於切割晶圓之前。
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