TWI382492B - Silicon-on-insulator semiconductor device with silicon layers having different crystal orientations and method of forming the silicon-on-insulator semiconductor device - Google Patents

Silicon-on-insulator semiconductor device with silicon layers having different crystal orientations and method of forming the silicon-on-insulator semiconductor device

Info

Publication number
TWI382492B
TWI382492B TW094137085A TW94137085A TWI382492B TW I382492 B TWI382492 B TW I382492B TW 094137085 A TW094137085 A TW 094137085A TW 94137085 A TW94137085 A TW 94137085A TW I382492 B TWI382492 B TW I382492B
Authority
TW
Taiwan
Prior art keywords
silicon
semiconductor device
insulator semiconductor
forming
different crystal
Prior art date
Application number
TW094137085A
Other languages
English (en)
Chinese (zh)
Other versions
TW200620537A (en
Inventor
Andrew M Waite
Jon Cheek
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of TW200620537A publication Critical patent/TW200620537A/zh
Application granted granted Critical
Publication of TWI382492B publication Critical patent/TWI382492B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
TW094137085A 2004-11-01 2005-10-24 Silicon-on-insulator semiconductor device with silicon layers having different crystal orientations and method of forming the silicon-on-insulator semiconductor device TWI382492B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/976,780 US7235433B2 (en) 2004-11-01 2004-11-01 Silicon-on-insulator semiconductor device with silicon layers having different crystal orientations and method of forming the silicon-on-insulator semiconductor device

Publications (2)

Publication Number Publication Date
TW200620537A TW200620537A (en) 2006-06-16
TWI382492B true TWI382492B (en) 2013-01-11

Family

ID=36074339

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094137085A TWI382492B (en) 2004-11-01 2005-10-24 Silicon-on-insulator semiconductor device with silicon layers having different crystal orientations and method of forming the silicon-on-insulator semiconductor device

Country Status (7)

Country Link
US (1) US7235433B2 (enExample)
EP (1) EP1815520B1 (enExample)
JP (1) JP5039557B2 (enExample)
KR (1) KR101124657B1 (enExample)
CN (1) CN100477235C (enExample)
TW (1) TWI382492B (enExample)
WO (1) WO2006049833A1 (enExample)

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US7432149B2 (en) * 2005-06-23 2008-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS on SOI substrates with hybrid crystal orientations
US7611937B2 (en) * 2005-06-24 2009-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. High performance transistors with hybrid crystal orientations
US7737532B2 (en) * 2005-09-06 2010-06-15 Taiwan Semiconductor Manufacturing Company, Ltd. Hybrid Schottky source-drain CMOS for high mobility and low barrier
US7396407B2 (en) * 2006-04-18 2008-07-08 International Business Machines Corporation Trench-edge-defect-free recrystallization by edge-angle-optimized solid phase epitaxy: method and applications to hybrid orientation substrates
US7452784B2 (en) * 2006-05-25 2008-11-18 International Business Machines Corporation Formation of improved SOI substrates using bulk semiconductor wafers
EP2442363A3 (en) * 2006-07-13 2012-07-11 National University Corporation Tohoku Unversity Semiconductor device
FR2905519B1 (fr) * 2006-08-31 2008-12-19 St Microelectronics Sa Procede de fabrication de circuit integre a transistors completement depletes et partiellement depletes
FR2915318B1 (fr) * 2007-04-20 2009-07-17 St Microelectronics Crolles 2 Procede de realisation d'un circuit electronique integre a deux portions de couches actives ayant des orientations cristallines differentes
KR101461206B1 (ko) * 2007-05-17 2014-11-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그의 제조방법
JP2009072845A (ja) * 2007-09-19 2009-04-09 Oki Semiconductor Co Ltd 半導体デバイスの製造方法
JP5394043B2 (ja) * 2007-11-19 2014-01-22 株式会社半導体エネルギー研究所 半導体基板及びそれを用いた半導体装置、並びにそれらの作製方法
US8039401B2 (en) * 2007-12-14 2011-10-18 Fairchild Semiconductor Corporation Structure and method for forming hybrid substrate
US7956415B2 (en) * 2008-06-05 2011-06-07 International Business Machines Corporation SOI transistor having a carrier recombination structure in a body
US8193616B2 (en) * 2009-06-29 2012-06-05 Kabushiki Kaisha Toshiba Semiconductor device on direct silicon bonded substrate with different layer thickness
CN102790004B (zh) * 2011-05-16 2014-06-11 中国科学院上海微系统与信息技术研究所 一种全隔离混合晶向soi的制备方法
JP6997501B2 (ja) * 2017-03-24 2022-01-17 旭化成エレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US10748934B2 (en) * 2018-08-28 2020-08-18 Qualcomm Incorporated Silicon on insulator with multiple semiconductor thicknesses using layer transfer
CN111009530A (zh) * 2018-10-08 2020-04-14 世界先进积体电路股份有限公司 半导体结构以及制造方法
US11348944B2 (en) * 2020-04-17 2022-05-31 Taiwan Semiconductor Manufacturing Company Limited Semiconductor wafer with devices having different top layer thicknesses
US12074024B2 (en) * 2021-12-29 2024-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacturing thereof

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Also Published As

Publication number Publication date
KR101124657B1 (ko) 2012-04-19
US7235433B2 (en) 2007-06-26
EP1815520B1 (en) 2012-05-02
JP2008518475A (ja) 2008-05-29
CN101044621A (zh) 2007-09-26
KR20070065902A (ko) 2007-06-25
JP5039557B2 (ja) 2012-10-03
CN100477235C (zh) 2009-04-08
TW200620537A (en) 2006-06-16
EP1815520A1 (en) 2007-08-08
WO2006049833A1 (en) 2006-05-11
US20060091427A1 (en) 2006-05-04

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