FR2905519B1 - Procede de fabrication de circuit integre a transistors completement depletes et partiellement depletes - Google Patents

Procede de fabrication de circuit integre a transistors completement depletes et partiellement depletes

Info

Publication number
FR2905519B1
FR2905519B1 FR0653524A FR0653524A FR2905519B1 FR 2905519 B1 FR2905519 B1 FR 2905519B1 FR 0653524 A FR0653524 A FR 0653524A FR 0653524 A FR0653524 A FR 0653524A FR 2905519 B1 FR2905519 B1 FR 2905519B1
Authority
FR
France
Prior art keywords
depleted
integrated circuit
manufacturing integrated
transistors
partially
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0653524A
Other languages
English (en)
Other versions
FR2905519A1 (fr
Inventor
Philippe Coronel
Michel Marty
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics SA
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA, STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics SA
Priority to FR0653524A priority Critical patent/FR2905519B1/fr
Priority to US11/846,622 priority patent/US7691727B2/en
Publication of FR2905519A1 publication Critical patent/FR2905519A1/fr
Application granted granted Critical
Publication of FR2905519B1 publication Critical patent/FR2905519B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
FR0653524A 2006-08-31 2006-08-31 Procede de fabrication de circuit integre a transistors completement depletes et partiellement depletes Expired - Fee Related FR2905519B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0653524A FR2905519B1 (fr) 2006-08-31 2006-08-31 Procede de fabrication de circuit integre a transistors completement depletes et partiellement depletes
US11/846,622 US7691727B2 (en) 2006-08-31 2007-08-29 Method for manufacturing an integrated circuit with fully depleted and partially depleted transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0653524A FR2905519B1 (fr) 2006-08-31 2006-08-31 Procede de fabrication de circuit integre a transistors completement depletes et partiellement depletes

Publications (2)

Publication Number Publication Date
FR2905519A1 FR2905519A1 (fr) 2008-03-07
FR2905519B1 true FR2905519B1 (fr) 2008-12-19

Family

ID=37845262

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0653524A Expired - Fee Related FR2905519B1 (fr) 2006-08-31 2006-08-31 Procede de fabrication de circuit integre a transistors completement depletes et partiellement depletes

Country Status (2)

Country Link
US (1) US7691727B2 (fr)
FR (1) FR2905519B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9659960B1 (en) 2015-12-09 2017-05-23 International Business Machines Corporation Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4224734A (en) * 1979-01-12 1980-09-30 Hewlett-Packard Company Low electrical and thermal impedance semiconductor component and method of manufacture
US5479033A (en) * 1994-05-27 1995-12-26 Sandia Corporation Complementary junction heterostructure field-effect transistor
GB2321336B (en) * 1997-01-15 2001-07-25 Univ Warwick Gas-sensing semiconductor devices
JP3265569B2 (ja) * 1998-04-15 2002-03-11 日本電気株式会社 半導体装置及びその製造方法
AU2001290068B2 (en) * 2000-09-21 2006-03-02 Cambridge Semiconductor Limited Semiconductor device and method of forming a semiconductor device
JP2002305293A (ja) * 2001-04-06 2002-10-18 Canon Inc 半導体部材の製造方法及び半導体装置の製造方法
US6664146B1 (en) * 2001-06-01 2003-12-16 Advanced Micro Devices, Inc. Integration of fully depleted and partially depleted field effect transistors formed in SOI technology
JP4325133B2 (ja) * 2001-08-27 2009-09-02 株式会社デンソー ガスセンサおよびその製造方法
US7402897B2 (en) * 2002-08-08 2008-07-22 Elm Technology Corporation Vertical system integration
JP4157496B2 (ja) * 2004-06-08 2008-10-01 株式会社東芝 半導体装置及びその製造方法
US7235433B2 (en) * 2004-11-01 2007-06-26 Advanced Micro Devices, Inc. Silicon-on-insulator semiconductor device with silicon layers having different crystal orientations and method of forming the silicon-on-insulator semiconductor device
JP2007194315A (ja) * 2006-01-18 2007-08-02 Seiko Epson Corp 半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
US7691727B2 (en) 2010-04-06
FR2905519A1 (fr) 2008-03-07
US20080064174A1 (en) 2008-03-13

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20100430