TWI379926B - Silica glass crucible having multilayered structure - Google Patents

Silica glass crucible having multilayered structure Download PDF

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Publication number
TWI379926B
TWI379926B TW098101931A TW98101931A TWI379926B TW I379926 B TWI379926 B TW I379926B TW 098101931 A TW098101931 A TW 098101931A TW 98101931 A TW98101931 A TW 98101931A TW I379926 B TWI379926 B TW I379926B
Authority
TW
Taiwan
Prior art keywords
layer
quartz
opaque
single crystal
transparent
Prior art date
Application number
TW098101931A
Other languages
English (en)
Chinese (zh)
Other versions
TW201016901A (en
Inventor
Makiko Kodama
Masaki Morikawa
Original Assignee
Japan Super Quartz Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Super Quartz Corp filed Critical Japan Super Quartz Corp
Publication of TW201016901A publication Critical patent/TW201016901A/zh
Application granted granted Critical
Publication of TWI379926B publication Critical patent/TWI379926B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
    • C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/14—Crucibles or vessels
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Melting And Manufacturing (AREA)
TW098101931A 2008-10-31 2009-01-19 Silica glass crucible having multilayered structure TWI379926B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008281169A JP5069663B2 (ja) 2008-10-31 2008-10-31 多層構造を有する石英ガラスルツボ

Publications (2)

Publication Number Publication Date
TW201016901A TW201016901A (en) 2010-05-01
TWI379926B true TWI379926B (en) 2012-12-21

Family

ID=41016766

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098101931A TWI379926B (en) 2008-10-31 2009-01-19 Silica glass crucible having multilayered structure

Country Status (6)

Country Link
US (1) US20100107970A1 (ko)
EP (1) EP2182099B1 (ko)
JP (1) JP5069663B2 (ko)
KR (1) KR101081994B1 (ko)
CN (1) CN101724887B (ko)
TW (1) TWI379926B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI732388B (zh) * 2018-12-27 2021-07-01 日商Ｓｕｍｃｏ股份有限公司 石英玻璃坩堝、及使用此之矽單結晶的製造方法、石英玻璃坩堝的紅外線透過率測定方法及其製造方法

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JP5500684B2 (ja) 2010-06-25 2014-05-21 株式会社Ｓｕｍｃｏ シリカガラスルツボ及びその製造方法、シリコンインゴットの製造方法
JP5618409B2 (ja) * 2010-12-01 2014-11-05 株式会社Sumco シリカガラスルツボ
JP6457498B2 (ja) * 2013-05-23 2019-01-23 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 半導体処理チャンバ用の被覆されたライナーアセンブリ
JP6253976B2 (ja) * 2013-12-28 2017-12-27 株式会社Sumco 石英ガラスルツボ及びその製造方法
CN106868583B (zh) * 2015-12-10 2019-06-14 有研半导体材料有限公司 一种石英坩埚
CN113897669B (zh) * 2016-09-13 2023-11-07 胜高股份有限公司 石英玻璃坩埚及其制造方法
JP7141844B2 (ja) 2018-04-06 2022-09-26 信越石英株式会社 石英ガラスるつぼの製造方法
US11703452B2 (en) * 2018-05-17 2023-07-18 Sumco Corporation Method and apparatus for measuring transmittance of quartz crucible
JP7349779B2 (ja) * 2018-08-09 2023-09-25 信越石英株式会社 石英ガラスるつぼ
DE112019006492T5 (de) 2018-12-27 2021-11-11 Sumco Corporation Quarzglastiegel
CN110541192B (zh) * 2019-10-10 2023-10-27 晶科能源股份有限公司 一种石英坩埚制备方法
CN113510824B (zh) * 2020-04-09 2022-07-05 隆基绿能科技股份有限公司 一种复合石英坩埚的制备方法及复合石英坩埚
KR20230081722A (ko) 2020-12-18 2023-06-07 가부시키가이샤 사무코 석영 유리 도가니 및 그 제조 방법 및 실리콘 단결정의 제조 방법
CN113800919B (zh) * 2021-10-26 2023-01-03 中材高新氮化物陶瓷有限公司 一种高精度氮化硅陶瓷微球及其制备方法和应用
JP2024011733A (ja) 2022-07-15 2024-01-25 株式会社Subaru 車両の配光制御装置
CN118186568B (zh) * 2024-05-15 2024-07-19 浙江美晶新材料股份有限公司 一种石英坩埚及其制备方法与应用

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JPH01148718A (ja) 1987-12-03 1989-06-12 Shin Etsu Handotai Co Ltd 石英るつぼの製造方法
JP2577587B2 (ja) 1987-12-15 1997-02-05 東芝セラミックス株式会社 石英ガラスルツボ製造装置
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US5306473A (en) * 1992-01-31 1994-04-26 Toshiba Ceramics Co., Ltd. Quartz glass crucible for pulling a single crystal
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JP2008281169A (ja) 2007-05-14 2008-11-20 Ykk Corp 保持具

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI732388B (zh) * 2018-12-27 2021-07-01 日商Ｓｕｍｃｏ股份有限公司 石英玻璃坩堝、及使用此之矽單結晶的製造方法、石英玻璃坩堝的紅外線透過率測定方法及其製造方法

Also Published As

Publication number Publication date
CN101724887B (zh) 2012-07-18
CN101724887A (zh) 2010-06-09
EP2182099A1 (en) 2010-05-05
JP5069663B2 (ja) 2012-11-07
KR20100048836A (ko) 2010-05-11
US20100107970A1 (en) 2010-05-06
JP2010105880A (ja) 2010-05-13
EP2182099B1 (en) 2016-08-17
TW201016901A (en) 2010-05-01
KR101081994B1 (ko) 2011-11-09

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