TWI379440B - Light emitting diode package having heat dissipating slugs - Google Patents

Light emitting diode package having heat dissipating slugs Download PDF

Info

Publication number
TWI379440B
TWI379440B TW097133792A TW97133792A TWI379440B TW I379440 B TWI379440 B TW I379440B TW 097133792 A TW097133792 A TW 097133792A TW 97133792 A TW97133792 A TW 97133792A TW I379440 B TWI379440 B TW I379440B
Authority
TW
Taiwan
Prior art keywords
heat sink
emitting diode
light
package
diode package
Prior art date
Application number
TW097133792A
Other languages
English (en)
Other versions
TW200917535A (en
Inventor
Tae-Won Seo
Sang-Cheol Lee
Chan-Sung Jung
Original Assignee
Seoul Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=40193828&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TWI379440(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Seoul Semiconductor Co Ltd filed Critical Seoul Semiconductor Co Ltd
Publication of TW200917535A publication Critical patent/TW200917535A/zh
Application granted granted Critical
Publication of TWI379440B publication Critical patent/TWI379440B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body

Description

29270pif.doc 九、發明說明： 【發明所屬之技術領域】 本發明是關於一種發光二極體封裝，更具體而言，本 發明疋關於一種具有散熱片（heat dissipating slug )的發光 二極體封裝。 【先前技術】 近些年來’逐漸使用基於氮化鎵之發光二極體（Ught emitting diode，LED)晶粒作為光源。此種發光二極體之光 功率（optical power)大致與輸入電流之量值成比例。因 此，若供應至發光二極體之輸入電流量值增加，則可獲得 高的光功率。然而，輸入電流量值之增加導致發光二極體 之接面溫度（junction temperature)升高。發光二極體之接 面’並度升南導致光度效率（photometric efficiency)降低， 其中光度效率指示輸入能量之多大部分轉換成可見光。因 此，需要防止發光二極體之接面溫度因輸入電流量值增加 而汁。 、3知上，為了防止發光二極體之接面溫度升高而使 封裝，在封農中，散熱器（heatsink)耦接至引線框 因而經由散熱器散熱。,然而，由於封裝是藉由 獨立政熱器耦接至引線框而製造的，所以存 封裝結構以及封裝結構之製造過程可能較複雜，且因此 能會提高域_誠本。 且口此 【發明内容】 本發明之目標是提供一種具有改良之散熱效能的發 1379440 29270pif.doc 僅逆提發Si:封㈠ 钟只I:散熱片，二者彼此隔開。第〜散熱 ί=導材料形成，主‘;=及第二 :放…片’用以支撐第— 放熱片以及 ㈣-散二以， 表面以及散熱片藉由封裝主體二 二第二散熱片用作外部導線，從而可= 斤裝:此外，由於可藉由第一散熱片以=之發光 所以错此可改良散熱效能。 —賴片散熱，
側表面^異ϊ散熱片以及第二散熱片之藉由封農主懸 露的部分可包含多個鳍片(fin = 散ί效;:熱⑽二散熱片之表面積增加，因而可2 ，據本㈣—些實施例，所述轉主射具有 ^腔用於暴露第-散熱片以及第二散μ的上 =極體晶粒可安裝於第一散熱片的經由空腔而暴:‘ 晶粒電二一可將發光二極體 同時，封裝主體可由透明樹脂形成。在此情況下 6 1379440 29270pif.doc 裝主體可覆蓋發光二極體晶粒及/或結合線。 根據本發明些實施例，第—散熱片可具有用作反射 表面的空腔。所述發光二極體晶粒安裝於第一散熱片的空 腔中。 據=明另—實施例’金屬反射11可位於第一散熱 射政;、片上’其中發光二極體晶粒可安裝於金屬反 射盗内和因此，可藉由金屬反射 一步改良散熱效能。封裝主體可·、里籍此了進 切金屬反射器。 了附接至金屬反射器，用以 【實施方式】 下文中，將參照附圖詳細描述本發 圖1為說明根據本發明實施例之具有散=貫=° 極體封裝的透視圖，且圖2為沿圖i :…、之毛光一 圖。 之線A_A截取的截面 麥照圖1以及圖2，根據本實施 包含第一散轨片21以及m 例之發光二極體封裝 發光二極二散熱片23、封裝主體加及 第一散熱片21以及第二散埶 此電絕緣。第一散熱片21以及第'二 < 此隔開，因而彼 料形成，所述傳導材料例如為諸心、ϋ可由傳導材 之純金屬、其金屬合金或其複人、、鎳、鋁以及鉬 且具有相對大之體積，從而可i易消散=片亦導熱， 產生之熱量。 政自备光二極體晶粒 同時，封裝主體25耦接至第— 月又,、、、片21以及第二散 7 29270pif.doc 因而支撐第一散熱片21以及第二散熱片23。封 可由塑膠或陶1材料形成，且界定發光二極體封 裝正體形狀。第一散熱片21以及第 :者;，主體之下表面以及側表面而暴^二 熱片21以及第二散熱片23之經由封裝主體之 表2路的部分可分別具備多_片（fm) 2U以及 /因致第—散熱片以及第二散熱片之表面積增加， 熱效率。於冷4卩散熱片’因而改良發光二極體封裝之散 同訏，發光二極體晶粒27電性連 散熱片…舉例而言，發光二極體晶粒ί可經 ΛΐίΤ (C〇ndUC_tWe adhesive) 、弟二…片21，且經由結合線（bonding wire) 29電性 連接至第二散熱片23。或者，發光二極體晶粒27可分別 經由黏接齡裝於第—散熱片21上且經由結合線電性連 接至第一散熱片21以及第二散熱片23。 同枯’封裝主體25可由透明樹脂形成。在此情況下， 封裝主體25可覆蓋發光二極體晶粒27以及結合線四 明樹脂可包含用於轉換自發光二極體晶粒27發射之 波長的填光體。或者封裝主體25由不透明之塑膠或陶 究形成，則封裝主體25具有用於將第—散熱片21以及第 二散熱片23之上表面暴露於外部的空腔。此時，發光二 體晶粒27可安裝於第—散熱片之上表面上，所述上表面經 由空腔而暴露’絲由結合線29而紐連接至第二散熱片 29270pif.doc 2圖11外’所述空腔可填充有包含碟光體之透明樹脂(未 光—壁31經組態而傾斜，因而用個於反射自發 先-極體“ 27發射之光狀射表面 塗佈反射材料以便提高光反射率。 土 圖3為說明根據本發明另—實 光二極體封裝的截面圖。 之，、有政熱片之毛 昭圖=及據t實施㈣光'^體封裝具有與參 發光二極體封裝實質上相同的組 i射i面3所示之第1熱片21具有形成 内，時’如參照圖i以及圖2所說明，封 塑膠或陶瓷形成。若封裝主體由 、" 成，則封裝主體可呈有J異ΐΐ明之塑㈣陶£形 腔。魏主體了具有用於暴露弟一散熱片21之空腔的空 塑膠材^ ^目丨=體純發射之光直接入射於 導致解損壞’例如結構上變形 戦主體是由塑膠材料形成，則光可導 31的^體玄損壞’從而可能會降低空腔（見圖2)之内壁 有而，根據此實施例，第—散熱片Μ形成 率此夕卜，第一散熱片21由具有高反射 …金屬形成，從而可改良發光二極體封裳之發光效， 圖4為說明根據本發明另一實施例之具魏熱片之發 29270pif.doc 光二極體封裝的截面圖。 ^ 參照圖4 ’根據此實施例之發光二極體封裝具有與參 照圖1以及圖2說明之發光二極體封裝實質上相同的結 構但不同之處在於，圖4所示之發光二極體封裝更包含 金屬反射器71。發光二極體晶粒27安裝於金屬反射器71 内。因此’自發光二極體晶粒27發射之光自金屬反射器 71之内表面反射，然後退出外部。 金屬反射器71可由與第一散熱片21以及第二散熱片 23相。同之材料形成，但本發明不限於此。舉例而言，金屬 "Τ由各種具有局反射率之金屬材料形成，諸如 銀、鋁、鎳或類似材料。 一同時，封裝主體75可能不僅耦接至第—散熱片2ι以 及第二散熱片23以支撐所述散熱片，而且亦 射器以蝴竭繼71。料， 可附著至第-散熱⑽以及第二散熱片23以反射"71 根據此實麵，金屬反抑71會防止封裝主體 7=壞’亚提高自發光二極體晶粒27發射之光的反體 金屬娜71將熱量釋放至外部，從而可改 根據本發明之實施例，可將散熱片用 而可提供具㈣單結構之發光封裝。此外，由於第1 = 片以及第二散熱片經由封裝主體之側表_及々表 雖然本發明已以實施例揭露如上 29270pif.doc 本發明’任何所屬技術領域中具有通常知識者，在不稅離 本發明之精神和範圍内，當可作些許之更動與潤飾，因此 本發明之保護範圍當視後附之申請專利範圍所界定者為 準 〇 L圖式簡單說明】 圖1為說明根據本發明實施例之具有散熱片之蛴 極體封裝的透視圖。 X先- 圖2為沿圖]之線a_a截取的截面圖。 圖3為說明根據本發明另一實施例之具有散熱 光二極體封裝的截面圖。 ’、’、之發 圖4為說明根據本發明另一實施例之具有散鼓 光二極體封裝的截面圖。 ‘、、、之發 【主要元件符號說明】 25 27 29 31 51 55 71 21 :第一散熱片 2la、23a :鰭片 23 :第二散熱片 55、75 :封裴主體 發光二極體晶粒 結合線 内壁 反射表面 封裝主體 金屬反射器 Α·Α :線

Claims (1)

1379440 29270pifl 修1E日期：1〇】年4月27日 爲第97丨33792號中文專利範圍無劃線修 十、申請專利範圍·· 1.一種發光二極體封裝，包含·· 第一散熱片以及第二散熱片， 且彼此隔開，並且彼此不直接電性連=電性傳導材料形成 封裝主體，其耦接至所述第_ ’ 熱片，以支撐所述第一散埶片以及所述第二散 發光-肺曰仏1 ’’’、片所述第二散熱片；以及 射Ϊ 粒，其電性連接至所述第Η 所述第二散熱片， 啟熱片以及 其令所述各別第一散熱片以及第 裝主體之下表面以及側表面而暴露於外部㈣所述封 申請專利範圍第1項所述之發光二極體封裝甘 中所述第-散熱片以及第二散孰片之 、裳、、 所述側表面而暴露的部分包含多個鰭片。Μ裝主體之 3. 如申請專利範圍第i項所述之發光二極 熱===t腔，所述=於暴露所述第二散 土於所述第-散熱片之ii:述空二 4. 如申請專利範圍第3項所述之發光二極體封穿，其 性Ϊίϊ合線，所述結合線用於將所述發光二極體晶粒電 連接至所述第二散熱片。 5. 如申請專利範圍第1項所述之發光二極體封裝，复 中所述封裝主體由透明樹脂形成。 … 6. 如申請專利範圍第丨項所述之發光二極體封裝，其 12 1379440 29270pifl 爲第97133792號中文專利_»__ 修正日期：101年4月27日 二極體成=面之空腔，且所述發光 7.”__7=:=空=封" 更包含位於所述第-散敎 4體封裝’八 反射器，苴Φ所、十、恭土 Γ 所述第二散熱片上之金屬 内部。〃 —極體晶粒絲於所述金屬反射器 8·如巾請專職圍第7項所述之發光二極體封裝，呈 P遠封裝主體附著至所述金屬反射W支撐所述金屬反 对益。
13
TW097133792A 2007-09-04 2008-09-03 Light emitting diode package having heat dissipating slugs TWI379440B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070089351A KR101365621B1 (ko) 2007-09-04 2007-09-04 열 방출 슬러그들을 갖는 발광 다이오드 패키지

Publications (2)

Publication Number Publication Date
TW200917535A TW200917535A (en) 2009-04-16
TWI379440B true TWI379440B (en) 2012-12-11

Family

ID=40193828

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097133792A TWI379440B (en) 2007-09-04 2008-09-03 Light emitting diode package having heat dissipating slugs

Country Status (5)

Country Link
US (3) US8120054B2 (zh)
EP (1) EP2034529B1 (zh)
JP (1) JP5390145B2 (zh)
KR (1) KR101365621B1 (zh)
TW (1) TWI379440B (zh)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101365621B1 (ko) * 2007-09-04 2014-02-24 서울반도체 주식회사 열 방출 슬러그들을 갖는 발광 다이오드 패키지
WO2009132508A1 (zh) * 2008-04-30 2009-11-05 Lou Mane 白光发光二极管及白光发光二极管灯
KR101125296B1 (ko) * 2009-10-21 2012-03-27 엘지이노텍 주식회사 라이트 유닛
KR101055003B1 (ko) * 2010-03-09 2011-08-05 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지, 조명 시스템, 및 발광 소자 제조방법
US8482111B2 (en) 2010-07-19 2013-07-09 Tessera, Inc. Stackable molded microelectronic packages
KR101114197B1 (ko) 2010-08-09 2012-02-22 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 시스템
CN102456810B (zh) * 2010-10-26 2014-12-10 展晶科技(深圳)有限公司 发光二极管封装结构
JP5886584B2 (ja) 2010-11-05 2016-03-16 ローム株式会社 半導体発光装置
CN102544303A (zh) * 2010-12-21 2012-07-04 展晶科技(深圳)有限公司 发光二极管封装结构
KR101128063B1 (ko) 2011-05-03 2012-04-23 테세라, 인코포레이티드 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리
TWI484672B (zh) * 2011-08-29 2015-05-11 Genesis Photonics Inc 發光二極體結構及其製造方法
US9105483B2 (en) 2011-10-17 2015-08-11 Invensas Corporation Package-on-package assembly with wire bond vias
US8946757B2 (en) * 2012-02-17 2015-02-03 Invensas Corporation Heat spreading substrate with embedded interconnects
US9211111B2 (en) * 2012-04-05 2015-12-15 Hitachi Aloka Medical, Ltd. Determination of shear wave characteristics
US8835228B2 (en) 2012-05-22 2014-09-16 Invensas Corporation Substrate-less stackable package with wire-bond interconnect
JP5569558B2 (ja) * 2012-06-06 2014-08-13 第一精工株式会社 電気部品用ハウジング
US9502390B2 (en) 2012-08-03 2016-11-22 Invensas Corporation BVA interposer
JP6147976B2 (ja) * 2012-09-26 2017-06-14 ローム株式会社 発光装置、および、発光ユニットの製造方法
US9167710B2 (en) 2013-08-07 2015-10-20 Invensas Corporation Embedded packaging with preformed vias
US20150076714A1 (en) 2013-09-16 2015-03-19 Invensas Corporation Microelectronic element with bond elements to encapsulation surface
WO2015062135A1 (zh) * 2013-10-29 2015-05-07 蔡鸿 一种led光源散热结构及其散热方法
US9583456B2 (en) 2013-11-22 2017-02-28 Invensas Corporation Multiple bond via arrays of different wire heights on a same substrate
US9379074B2 (en) 2013-11-22 2016-06-28 Invensas Corporation Die stacks with one or more bond via arrays of wire bond wires and with one or more arrays of bump interconnects
US9263394B2 (en) 2013-11-22 2016-02-16 Invensas Corporation Multiple bond via arrays of different wire heights on a same substrate
US9583411B2 (en) 2014-01-17 2017-02-28 Invensas Corporation Fine pitch BVA using reconstituted wafer with area array accessible for testing
US10381326B2 (en) 2014-05-28 2019-08-13 Invensas Corporation Structure and method for integrated circuits packaging with increased density
US11686436B2 (en) 2014-09-28 2023-06-27 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and light bulb using LED filament
US11690148B2 (en) 2014-09-28 2023-06-27 Zhejiang Super Lighting Electric Appliance Co., Ltd. LED filament and LED light bulb
US11073248B2 (en) 2014-09-28 2021-07-27 Zhejiang Super Lighting Electric Appliance Co., Ltd. LED bulb lamp
US11543083B2 (en) 2014-09-28 2023-01-03 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
US11085591B2 (en) 2014-09-28 2021-08-10 Zhejiang Super Lighting Electric Appliance Co., Ltd LED light bulb with curved filament
US11525547B2 (en) 2014-09-28 2022-12-13 Zhejiang Super Lighting Electric Appliance Co., Ltd LED light bulb with curved filament
US11421827B2 (en) 2015-06-19 2022-08-23 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
US9735084B2 (en) 2014-12-11 2017-08-15 Invensas Corporation Bond via array for thermal conductivity
US9888579B2 (en) 2015-03-05 2018-02-06 Invensas Corporation Pressing of wire bond wire tips to provide bent-over tips
US9502372B1 (en) 2015-04-30 2016-11-22 Invensas Corporation Wafer-level packaging using wire bond wires in place of a redistribution layer
US9761554B2 (en) 2015-05-07 2017-09-12 Invensas Corporation Ball bonding metal wire bond wires to metal pads
TWI532953B (zh) * 2015-08-27 2016-05-11 Cooling stent structure and manufacturing method thereof
US10490528B2 (en) 2015-10-12 2019-11-26 Invensas Corporation Embedded wire bond wires
US9490222B1 (en) 2015-10-12 2016-11-08 Invensas Corporation Wire bond wires for interference shielding
US10332854B2 (en) 2015-10-23 2019-06-25 Invensas Corporation Anchoring structure of fine pitch bva
US10181457B2 (en) 2015-10-26 2019-01-15 Invensas Corporation Microelectronic package for wafer-level chip scale packaging with fan-out
US9911718B2 (en) 2015-11-17 2018-03-06 Invensas Corporation ‘RDL-First’ packaged microelectronic device for a package-on-package device
US9984992B2 (en) 2015-12-30 2018-05-29 Invensas Corporation Embedded wire bond wires for vertical integration with separate surface mount and wire bond mounting surfaces
US9935075B2 (en) 2016-07-29 2018-04-03 Invensas Corporation Wire bonding method and apparatus for electromagnetic interference shielding
US10299368B2 (en) 2016-12-21 2019-05-21 Invensas Corporation Surface integrated waveguides and circuit structures therefor
DE102019126021A1 (de) * 2019-09-26 2021-04-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6531334B2 (en) * 1997-07-10 2003-03-11 Sony Corporation Method for fabricating hollow package with a solid-state image device
DE29825062U1 (de) * 1997-07-29 2004-07-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US6335548B1 (en) * 1999-03-15 2002-01-01 Gentex Corporation Semiconductor radiation emitter package
JP2003163378A (ja) * 2001-11-26 2003-06-06 Citizen Electronics Co Ltd 表面実装型発光ダイオード及びその製造方法
EP1467414A4 (en) * 2001-12-29 2007-07-11 Hangzhou Fuyang Xinying Dianzi LED AND LED LAMP
US7244965B2 (en) * 2002-09-04 2007-07-17 Cree Inc, Power surface mount light emitting die package
JP4633333B2 (ja) * 2003-01-23 2011-02-16 株式会社光波 発光装置
JP2005141194A (ja) * 2003-10-14 2005-06-02 Seiko Epson Corp 補強構造体、表示装置、及び電子機器
JP4183255B2 (ja) * 2004-05-07 2008-11-19 菱生精密工業股▲分▼有限公司 Ｌｅｄの封入成型方法および完成品の構造
JP4359195B2 (ja) * 2004-06-11 2009-11-04 株式会社東芝 半導体発光装置及びその製造方法並びに半導体発光ユニット
KR100585014B1 (ko) 2004-07-01 2006-05-29 서울반도체 주식회사 일체형 열전달 슬러그가 형성된 발광다이오드 패키지 및 그 제조방법
TWI237408B (en) * 2004-09-03 2005-08-01 Lustrous Technology Ltd Light emitting diode (LED) packaging
JP5192811B2 (ja) * 2004-09-10 2013-05-08 ソウル セミコンダクター カンパニー リミテッド 多重モールド樹脂を有する発光ダイオードパッケージ
US20060102922A1 (en) * 2004-11-15 2006-05-18 Kenly Precision Industrial Co., Ltd. LED heat dissipation support
US20060124953A1 (en) * 2004-12-14 2006-06-15 Negley Gerald H Semiconductor light emitting device mounting substrates and packages including cavities and cover plates, and methods of packaging same
KR100631901B1 (ko) * 2005-01-31 2006-10-11 삼성전기주식회사 Ｌｅｄ 패키지 프레임 및 이를 채용하는 ｌｅｄ 패키지
KR101139891B1 (ko) * 2005-01-31 2012-04-27 렌슬러 폴리테크닉 인스티튜트 확산 반사면을 구비한 발광 다이오드 소자
KR100772374B1 (ko) * 2005-03-12 2007-11-01 삼성전자주식회사 방열 시스템을 가진 가장자리 발광형 백라이트 유닛
EP1720386B1 (en) * 2005-04-25 2015-06-03 NGK Spark Plug Company Limited Wiring board
KR100662844B1 (ko) * 2005-06-10 2007-01-02 삼성전자주식회사 Ｌｅｄ 패키지 및 그 제조방법과 이를 이용한 ｌｅｄ어레이 모듈
JP2007012727A (ja) * 2005-06-29 2007-01-18 Toyoda Gosei Co Ltd 発光装置
KR100631992B1 (ko) * 2005-07-19 2006-10-09 삼성전기주식회사 측면 방출형 이중 렌즈 구조 ｌｅｄ 패키지
JP2007027535A (ja) * 2005-07-20 2007-02-01 Stanley Electric Co Ltd 光半導体装置
US8263870B2 (en) * 2005-09-27 2012-09-11 Panasonic Corporation Heat dissipating wiring board, method for manufacturing same, and electric device using heat dissipating wiring board
US20070252161A1 (en) * 2006-03-31 2007-11-01 3M Innovative Properties Company Led mounting structures
KR100735325B1 (ko) * 2006-04-17 2007-07-04 삼성전기주식회사 발광다이오드 패키지 및 그 제조방법
KR20090013230A (ko) * 2006-06-02 2009-02-04 히다치 가세고교 가부시끼가이샤 광반도체소자 탑재용 패키지 및 이것을 이용한 광반도체장치
US8044418B2 (en) * 2006-07-13 2011-10-25 Cree, Inc. Leadframe-based packages for solid state light emitting devices
KR101365621B1 (ko) * 2007-09-04 2014-02-24 서울반도체 주식회사 열 방출 슬러그들을 갖는 발광 다이오드 패키지
US8188595B2 (en) * 2008-08-13 2012-05-29 Progressive Cooling Solutions, Inc. Two-phase cooling for light-emitting devices

Also Published As

Publication number Publication date
KR101365621B1 (ko) 2014-02-24
US20140203321A1 (en) 2014-07-24
EP2034529A2 (en) 2009-03-11
JP5390145B2 (ja) 2014-01-15
US20120098019A1 (en) 2012-04-26
KR20090024369A (ko) 2009-03-09
JP2009065152A (ja) 2009-03-26
US8120054B2 (en) 2012-02-21
US8860068B2 (en) 2014-10-14
US20090057704A1 (en) 2009-03-05
EP2034529B1 (en) 2016-04-13
US9412924B2 (en) 2016-08-09
TW200917535A (en) 2009-04-16
EP2034529A3 (en) 2011-11-02

Similar Documents

Publication Publication Date Title
TWI379440B (en) Light emitting diode package having heat dissipating slugs
US8003998B2 (en) Light-emitting diode arrangement
TWI267211B (en) Light-emitting apparatus and illuminating apparatus
JP4804429B2 (ja) 発光装置及びこれを用いた照明器具
JP5226077B2 (ja) 発光モジュール、発光モジュールの製造方法、および灯具ユニット
JP5510646B2 (ja) 車両用灯具
US8047686B2 (en) Multiple light-emitting element heat pipe assembly
JP5359734B2 (ja) 発光装置及びその製造方法
TW200524186A (en) Light emitting device and lighting apparatus using the same
TW201011953A (en) Phosphor layer arrangement for use with light emitting diodes
JP4808550B2 (ja) 発光ダイオード光源装置、照明装置、表示装置及び交通信号機
JP2008513983A (ja) オプトエレクトロニクスデバイス用ケーシング、オプトエレクトロニクスデバイスおよびオプトエレクトロニクスデバイスの製造方法
JP2013506251A (ja) 半導体照明装置
JP2007165803A (ja) 発光装置
JP2008518431A (ja) 電磁放射を放出する半導体構成素子および構成素子ケーシング
JP2009290180A (ja) Ｌｅｄパッケージ及びその製造方法
JP4604819B2 (ja) 発光装置
US8710723B1 (en) All-angle light emitting element having high heat dissipating efficiency
JP2006019745A (ja) 発光半導体チップおよびビーム整形エレメント
JP2014086566A (ja) 光波長変換装置
JP5401452B2 (ja) オプトエレクトロニクス半導体チップ
JP2006013237A (ja) 発光装置
KR101836066B1 (ko) 크롬(Chromium)을 이용한 LED 반사 방열 기판
JP2005159149A (ja) 高輝度ｌｅｄ発光部
JP2002014393A (ja) 電子閃光装置