JP2009065152A - 熱放出スラグを有する発光ダイオードパッケージ - Google Patents
熱放出スラグを有する発光ダイオードパッケージ Download PDFInfo
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- JP2009065152A JP2009065152A JP2008222053A JP2008222053A JP2009065152A JP 2009065152 A JP2009065152 A JP 2009065152A JP 2008222053 A JP2008222053 A JP 2008222053A JP 2008222053 A JP2008222053 A JP 2008222053A JP 2009065152 A JP2009065152 A JP 2009065152A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
Abstract
【解決手段】 本発明による発光ダイオードパッケージは、互いに離隔された第1及び第2の熱放出スラグを含む。前記第1及び第2の熱放出スラグは、導電性材料で形成される。パッケージ本体が前記第1及び第2の熱放出スラグに結合され、前記第1及び第2の熱放出スラグを支持する。また、発光ダイオードダイが前記第1及び第2の熱放出スラグに電気的に連結される。一方、前記第1及び第2の熱放出スラグ各々は、前記パッケージ本体の下部面及び側面を通じて外部に露出される。これにより、前記第1及び第2の熱放出スラグが外部リードとして使用されることができる。
【選択図】 図1
Description
力電流の大きさに比例する。したがって、発光ダイオードに入力される電流の大きさを増加させて、高い光出力を得ることができる。しかし、入力される電流大きさの増加は、発光ダイオードの接合温度を増加させる。前記発光ダイオードの接合温度の増加は、入力エネルギーが可視光に変換される程度を示す発光効率の減少につながる。したがって、入力電流の大きさの増加による発光ダイオードの接合温度の増加を防止することが要求される。
本発明が解決しようとする他の課題は、発光ダイオードダイから発生する熱を容易に放出すると共に、構造が簡単な発光ダイオードパッケージを提供することにある。
第2の熱放出スラグに電気的に連結することができる。
一方、前記パッケージ本体は、透明樹脂で形成されることができる。この場合、前記パッケージ本体は、発光ダイオードダイ及び/またはボンディングワイヤを覆うことができる。
前記パッケージ本体は、前記金属リフレクタに取り付けられ、前記金属リフレクタを支持することができる。
図1は、本発明の一実施例に係る熱放出スラグを有する発光ダイオードパッケージを説明するための斜視図であり、図2は、図1の線A‐Aに沿う断面図である。
とは異なって、前記発光ダイオードダイ27は、第1の熱放出スラグ21上に接着剤を用いて実装され、ボンディングワイヤを介して各々第1及び第2の熱放出スラグ21、23に電気的に連結されることができる。
図3を参照すれば、本実施例に係る発光ダイオードパッケージは、図1及び図2を参照して説明した発光ダイオードパッケージとほぼ同一の構造を有し、但し、図3に示す第1の熱放出スラグ21が反射面51を成すキャビティを有することが異なる。発光ダイオードダイ27は、前記キャビティ内に実装される。一方、パッケージ本体55は、図1及び図2を参照して説明したように、プラスチックまたはセラミックで形成されることができ、前記パッケージ本体が不透明プラスチックやセラミックで形成された場合、前記パッケージ本体は、前記第1の熱放出スラグ21のキャビティを露出させるキャビティを有する。
図4を参照すれば、本実施例に係る発光ダイオードパッケージは、図1及び図2を参照して説明した発光ダイオードパッケージとほぼ同一の構造を有し、但し、図4に示す発光ダイオードパッケージが金属リフレクタ71をさらに含むことが異なる。発光ダイオードダイ27は、前記金属リフレクタ71の内部に実装され、したがって、発光ダイオードダイ27から放出された光は、金属リフレクタ71の内面で反射され、外部に放出される。
21a、23a ひれ
25 パッケージ本体
27 発光ダイオードダイ
29 ボンディングワイヤ
31 キャビティ内壁
51 反射面
55 パッケージ本体
71 金属リフレクタ
75 パッケージ本体
Claims (8)
- 導電性材料で形成され、互いに離隔された第1及び第2の熱放出スラグと、
前記第1及び第2の熱放出スラグに結合され、前記第1及び第2の熱放出スラグを支持するパッケージ本体と、
前記第1及び第2の熱放出スラグに電気的に連結される発光ダイオードダイと、を含み、
前記第1及び第2の熱放出スラグ各々は、前記パッケージ本体の下部面及び側面を介して外部に露出されることを特徴とする発光ダイオードパッケージ。 - 前記第1及び第2の熱放出スラグのうち前記パッケージ本体の側面を介して露出された部分は、各々複数のひれを含むことを特徴とする請求項1に記載の発光ダイオードパッケージ。
- 前記パッケージ本体は、前記第1及び第2の熱放出スラグの上部面を露出させるキャビティを有し、
前記発光ダイオードダイは、前記キャビティによって露出された前記第1の熱放出スラグの上部面上に実装されることを特徴とする請求項1に記載の発光ダイオードパッケージ。 - 前記発光ダイオードダイを前記第2の熱放出スラグに電気的に連結するボンディングワイヤをさらに含むことを特徴とする請求項3に記載の発光ダイオードパッケージ。
- 前記パッケージ本体は、透明樹脂で形成されることを特徴とする請求項1に記載の発光ダイオードパッケージ。
- 前記第1の熱放出スラグは、反射面を成すキャビティを有し、
前記発光ダイオードダイは、前記第1の熱放出スラグのキャビティ内に実装されることを特徴とする請求項1に記載の発光ダイオードパッケージ。 - 前記第1及び第2の熱放出スラグの上に位置する金属リフレクタをさらに含み、
前記発光ダイオードダイは、前記金属リフレクタの内部に実装されることを特徴とする請求項1に記載の発光ダイオードパッケージ。 - 前記パッケージ本体は、前記金属リフレクタに取り付けられ、前記金属リフレクタを支持することを特徴とする請求項7に記載の発光ダイオードパッケージ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR10-2007-0089351 | 2007-09-04 | ||
KR1020070089351A KR101365621B1 (ko) | 2007-09-04 | 2007-09-04 | 열 방출 슬러그들을 갖는 발광 다이오드 패키지 |
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JP2009065152A true JP2009065152A (ja) | 2009-03-26 |
JP5390145B2 JP5390145B2 (ja) | 2014-01-15 |
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JP2008222053A Active JP5390145B2 (ja) | 2007-09-04 | 2008-08-29 | 熱放出スラグを有する発光ダイオードパッケージ |
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US (3) | US8120054B2 (ja) |
EP (1) | EP2034529B1 (ja) |
JP (1) | JP5390145B2 (ja) |
KR (1) | KR101365621B1 (ja) |
TW (1) | TWI379440B (ja) |
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Also Published As
Publication number | Publication date |
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KR101365621B1 (ko) | 2014-02-24 |
US20140203321A1 (en) | 2014-07-24 |
EP2034529A2 (en) | 2009-03-11 |
JP5390145B2 (ja) | 2014-01-15 |
US20120098019A1 (en) | 2012-04-26 |
KR20090024369A (ko) | 2009-03-09 |
TWI379440B (en) | 2012-12-11 |
US8120054B2 (en) | 2012-02-21 |
US8860068B2 (en) | 2014-10-14 |
US20090057704A1 (en) | 2009-03-05 |
EP2034529B1 (en) | 2016-04-13 |
US9412924B2 (en) | 2016-08-09 |
TW200917535A (en) | 2009-04-16 |
EP2034529A3 (en) | 2011-11-02 |
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