TWI376281B - Process for the refurbishing of a sputtering target - Google Patents
Process for the refurbishing of a sputtering target Download PDFInfo
- Publication number
- TWI376281B TWI376281B TW097127042A TW97127042A TWI376281B TW I376281 B TWI376281 B TW I376281B TW 097127042 A TW097127042 A TW 097127042A TW 97127042 A TW97127042 A TW 97127042A TW I376281 B TWI376281 B TW I376281B
- Authority
- TW
- Taiwan
- Prior art keywords
- target
- powder
- waste
- metal
- weight
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 31
- 230000008569 process Effects 0.000 title claims description 24
- 238000005477 sputtering target Methods 0.000 title claims description 10
- 239000000843 powder Substances 0.000 claims description 55
- 239000002699 waste material Substances 0.000 claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 44
- 238000005498 polishing Methods 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 8
- 239000007787 solid Substances 0.000 claims description 7
- 239000012255 powdered metal Substances 0.000 claims description 6
- 230000002159 abnormal effect Effects 0.000 claims description 5
- 238000007517 polishing process Methods 0.000 claims description 5
- 238000004064 recycling Methods 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- OKMDRSGVTCSGLL-UHFFFAOYSA-N [B]=O.[Pt].[Cr].[Co] Chemical compound [B]=O.[Pt].[Cr].[Co] OKMDRSGVTCSGLL-UHFFFAOYSA-N 0.000 claims description 3
- 230000007246 mechanism Effects 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 238000007670 refining Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- 229910052703 rhodium Inorganic materials 0.000 claims 3
- 239000010948 rhodium Substances 0.000 claims 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 3
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 241000238366 Cephalopoda Species 0.000 claims 1
- 230000005856 abnormality Effects 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical group [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 239000002905 metal composite material Substances 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 235000012149 noodles Nutrition 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- 238000005086 pumping Methods 0.000 claims 1
- 230000009467 reduction Effects 0.000 claims 1
- 239000011232 storage material Substances 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- 239000002245 particle Substances 0.000 description 11
- 229910002804 graphite Inorganic materials 0.000 description 10
- 239000010439 graphite Substances 0.000 description 10
- 239000012535 impurity Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000007731 hot pressing Methods 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 5
- 229910001092 metal group alloy Inorganic materials 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000003801 milling Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000012958 reprocessing Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- -1 "Grade 2124 Chemical compound 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002902 bimodal effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- IOKOVYQTEHFVRF-UHFFFAOYSA-N chromium;cobalt;oxoplatinum Chemical compound [Cr].[Co].[Pt]=O IOKOVYQTEHFVRF-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000000399 optical microscopy Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
- C23C24/082—Coating starting from inorganic powder by application of heat or pressure and heat without intermediate formation of a liquid in the layer
- C23C24/085—Coating with metallic material, i.e. metals or metal alloys, optionally comprising hard particles, e.g. oxides, carbides or nitrides
- C23C24/087—Coating with metal alloys or metal elements only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
- B22F2007/068—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts repairing articles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T82/00—Turning
- Y10T82/10—Process of turning
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US95026407P | 2007-07-17 | 2007-07-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200914171A TW200914171A (en) | 2009-04-01 |
| TWI376281B true TWI376281B (en) | 2012-11-11 |
Family
ID=40260042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097127042A TWI376281B (en) | 2007-07-17 | 2008-07-16 | Process for the refurbishing of a sputtering target |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7871563B2 (enExample) |
| EP (1) | EP2087144B1 (enExample) |
| JP (1) | JP5204124B2 (enExample) |
| DK (1) | DK2087144T3 (enExample) |
| ES (1) | ES2436778T3 (enExample) |
| TW (1) | TWI376281B (enExample) |
| WO (1) | WO2009012278A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080145688A1 (en) | 2006-12-13 | 2008-06-19 | H.C. Starck Inc. | Method of joining tantalum clade steel structures |
| US8197894B2 (en) | 2007-05-04 | 2012-06-12 | H.C. Starck Gmbh | Methods of forming sputtering targets |
| US20090255808A1 (en) * | 2008-04-11 | 2009-10-15 | Seagate Technology Llc | Target for efficient use of precious deposition material |
| US8246903B2 (en) | 2008-09-09 | 2012-08-21 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
| JP4348396B1 (ja) * | 2008-12-26 | 2009-10-21 | 田中貴金属工業株式会社 | 再生ターゲットの製造方法 |
| WO2012074609A1 (en) * | 2010-11-30 | 2012-06-07 | Dow Global Technologies Llc | Refurbishing copper and indium containing alloy sputter targets |
| JP2013001971A (ja) * | 2011-06-17 | 2013-01-07 | Solar Applied Materials Technology Corp | 再製スパッタリングターゲット及びその製造方法 |
| US8703233B2 (en) | 2011-09-29 | 2014-04-22 | H.C. Starck Inc. | Methods of manufacturing large-area sputtering targets by cold spray |
| US9802233B2 (en) | 2014-05-01 | 2017-10-31 | Praxair S. T. Technology, Inc. | Gold evaporative sources with reduced contaminants and methods for making the same |
| US11149343B2 (en) * | 2015-05-28 | 2021-10-19 | Materion Corporation | Processes for refurbishing a spent sputtering target |
| MY197929A (en) * | 2018-09-25 | 2023-07-25 | Jx Nippon Mining & Metals Corp | Sputtering target and powder for producing sputtering target |
| CN116676575A (zh) * | 2023-07-03 | 2023-09-01 | 福建阿石创新材料股份有限公司 | 一种靶材的修复方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62230967A (ja) * | 1986-03-31 | 1987-10-09 | Mitsubishi Metal Corp | 光磁気記録薄膜の形成に用いられた強磁性材製使用済みターゲットの再生方法 |
| JPS6393859A (ja) * | 1986-10-09 | 1988-04-25 | Toshiba Corp | スパツタリングタ−ゲツトとその製造方法 |
| US4954170A (en) * | 1989-06-30 | 1990-09-04 | Westinghouse Electric Corp. | Methods of making high performance compacts and products |
| JP3609682B2 (ja) * | 1991-01-25 | 2005-01-12 | 株式会社東芝 | 半導体素子の製造方法 |
| JPH0565635A (ja) * | 1991-03-11 | 1993-03-19 | Mitsubishi Materials Corp | マグネトロンスパツタ用貴金属ターゲツトの修復方法 |
| US6582641B1 (en) * | 1994-08-25 | 2003-06-24 | Praxair S.T. Technology, Inc. | Apparatus and method for making metal oxide sputtering targets |
| US5857611A (en) * | 1995-08-16 | 1999-01-12 | Sony Corporation | Sputter target/backing plate assembly and method of making same |
| KR20000028741A (ko) * | 1998-10-12 | 2000-05-25 | 안자키 사토루 | 열전반도체 재료 또는 소자의 제조방법 및 열전모듈의제조방법 |
| US6042777A (en) * | 1999-08-03 | 2000-03-28 | Sony Corporation | Manufacturing of high density intermetallic sputter targets |
| JP2001342562A (ja) * | 2000-06-01 | 2001-12-14 | Hitachi Metals Ltd | ターゲット材およびその製造方法 |
| AU2002333640A1 (en) * | 2001-09-17 | 2003-04-01 | Heraeus, Inc. | Refurbishing spent sputtering targets |
| FI112026B (fi) * | 2002-02-18 | 2003-10-15 | Raute Oyj | Laitteisto levymäisen tuotteen puristamiskuumentamiseksi |
| US20070189916A1 (en) * | 2002-07-23 | 2007-08-16 | Heraeus Incorporated | Sputtering targets and methods for fabricating sputtering targets having multiple materials |
| JP2004225091A (ja) | 2003-01-21 | 2004-08-12 | Sumitomo Metal Mining Co Ltd | スパッタリングターゲットの製造方法 |
| JP4211558B2 (ja) * | 2003-10-07 | 2009-01-21 | 住友金属鉱山株式会社 | スパッタリングターゲット材料、その製造方法、及びそれを用いた透明導電膜の製造方法 |
| US20060021870A1 (en) * | 2004-07-27 | 2006-02-02 | Applied Materials, Inc. | Profile detection and refurbishment of deposition targets |
-
2008
- 2008-07-15 US US12/173,410 patent/US7871563B2/en active Active
- 2008-07-16 EP EP08826355.3A patent/EP2087144B1/en active Active
- 2008-07-16 TW TW097127042A patent/TWI376281B/zh active
- 2008-07-16 ES ES08826355.3T patent/ES2436778T3/es active Active
- 2008-07-16 JP JP2009543294A patent/JP5204124B2/ja active Active
- 2008-07-16 WO PCT/US2008/070109 patent/WO2009012278A1/en not_active Ceased
- 2008-07-16 DK DK08826355.3T patent/DK2087144T3/da active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2009012278A1 (en) | 2009-01-22 |
| US20090022616A1 (en) | 2009-01-22 |
| EP2087144A1 (en) | 2009-08-12 |
| EP2087144A4 (en) | 2011-04-13 |
| JP2010514921A (ja) | 2010-05-06 |
| JP5204124B2 (ja) | 2013-06-05 |
| US7871563B2 (en) | 2011-01-18 |
| TW200914171A (en) | 2009-04-01 |
| DK2087144T3 (da) | 2013-11-04 |
| ES2436778T3 (es) | 2014-01-07 |
| EP2087144B1 (en) | 2013-09-04 |
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