MY197929A - Sputtering target and powder for producing sputtering target - Google Patents

Sputtering target and powder for producing sputtering target

Info

Publication number
MY197929A
MY197929A MYPI2021001557A MYPI2021001557A MY197929A MY 197929 A MY197929 A MY 197929A MY PI2021001557 A MYPI2021001557 A MY PI2021001557A MY PI2021001557 A MYPI2021001557 A MY PI2021001557A MY 197929 A MY197929 A MY 197929A
Authority
MY
Malaysia
Prior art keywords
sputtering target
powder
producing
melting point
main component
Prior art date
Application number
MYPI2021001557A
Inventor
Yasuyuki Iwabuchi
Atsushi Sato
Masayoshi Shimizu
Akira SHIMOJUKU
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of MY197929A publication Critical patent/MY197929A/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/12Metallic powder containing non-metallic particles
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • C22C1/05Mixtures of metal powder with non-metallic powder
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/04Alloys based on a platinum group metal
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84Processes or apparatus specially adapted for manufacturing record carriers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)

Abstract

Provided is a sputtering target containing Ru and B. The sputtering target contains Ru as a main component, wherein the sputtering target has a melting point higher than that of B2O3 and comprises a composite oxide containing boron.
MYPI2021001557A 2018-09-25 2019-05-16 Sputtering target and powder for producing sputtering target MY197929A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018178381 2018-09-25
PCT/JP2019/019571 WO2020066114A1 (en) 2018-09-25 2019-05-16 Sputtering target and powder for producing sputtering target

Publications (1)

Publication Number Publication Date
MY197929A true MY197929A (en) 2023-07-25

Family

ID=69953061

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2021001557A MY197929A (en) 2018-09-25 2019-05-16 Sputtering target and powder for producing sputtering target

Country Status (6)

Country Link
JP (1) JP7072664B2 (en)
CN (1) CN112739846A (en)
MY (1) MY197929A (en)
SG (1) SG11202102759VA (en)
TW (1) TWI727334B (en)
WO (1) WO2020066114A1 (en)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7186471B2 (en) * 2002-02-28 2007-03-06 Seagate Technology Llc Chemically ordered, cobalt-three platinum alloys for magnetic recording
JP2006283054A (en) * 2005-03-31 2006-10-19 Hoya Corp Sputtering target, manufacturing method for substrate with multi-layered reflecting film, manufacturing method for reflection type mask blank, and manufacturing method for reflection type mask
US9732413B2 (en) * 2005-06-16 2017-08-15 Jx Nippon Mining & Metals Corporation Ruthenium-alloy sputtering target
JP2008101246A (en) * 2006-10-19 2008-05-01 Asahi Glass Co Ltd Sputtering target used for producing reflection type mask blank for euv lithography
US7871563B2 (en) * 2007-07-17 2011-01-18 Williams Advanced Materials, Inc. Process for the refurbishing of a sputtering target
CN105026589B (en) * 2013-04-30 2017-07-18 吉坤日矿日石金属株式会社 Sintered body, the magnetic recording film formation sputtering target comprising the sintered body
JP6005767B2 (en) * 2014-01-17 2016-10-12 Jx金属株式会社 Sputtering target for magnetic recording media
WO2016013334A1 (en) * 2014-07-25 2016-01-28 Jx日鉱日石金属株式会社 Sputtering target for forming magnetic thin film
WO2016035415A1 (en) * 2014-09-04 2016-03-10 Jx金属株式会社 Sputtering target
CN108026631B (en) * 2015-02-19 2020-02-28 捷客斯金属株式会社 Sputtering target for forming magnetic thin film
TW201636444A (en) * 2015-04-01 2016-10-16 光洋應用材料科技股份有限公司 Ruthenium-based target and intermediate layer for magnetic recording media
MY191374A (en) * 2016-12-28 2022-06-21 Jx Nippon Mining & Metals Corp Magnetic material sputtering target and method for manufacturing same

Also Published As

Publication number Publication date
TWI727334B (en) 2021-05-11
WO2020066114A1 (en) 2020-04-02
JP7072664B2 (en) 2022-05-20
TW202012666A (en) 2020-04-01
JPWO2020066114A1 (en) 2021-10-21
SG11202102759VA (en) 2021-04-29
CN112739846A (en) 2021-04-30

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