TWI369798B - - Google Patents

Info

Publication number
TWI369798B
TWI369798B TW096144834A TW96144834A TWI369798B TW I369798 B TWI369798 B TW I369798B TW 096144834 A TW096144834 A TW 096144834A TW 96144834 A TW96144834 A TW 96144834A TW I369798 B TWI369798 B TW I369798B
Authority
TW
Taiwan
Application number
TW096144834A
Other versions
TW200838008A (en
Inventor
Toru Yumoto
Original Assignee
Asahi Chemical Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Ind filed Critical Asahi Chemical Ind
Publication of TW200838008A publication Critical patent/TW200838008A/zh
Application granted granted Critical
Publication of TWI369798B publication Critical patent/TWI369798B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/155—Hole transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/165—Electron transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)
TW096144834A 2006-12-04 2007-11-26 Method for producing electronic device and coating solutions suitable for the production method TW200838008A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006327096 2006-12-04
JP2006327097 2006-12-04
JP2007160290 2007-06-18
JP2007160289 2007-06-18

Publications (2)

Publication Number Publication Date
TW200838008A TW200838008A (en) 2008-09-16
TWI369798B true TWI369798B (zh) 2012-08-01

Family

ID=39527609

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096144834A TW200838008A (en) 2006-12-04 2007-11-26 Method for producing electronic device and coating solutions suitable for the production method

Country Status (5)

Country Link
US (1) US8101230B2 (zh)
JP (1) JP4723555B2 (zh)
KR (1) KR100921288B1 (zh)
CN (1) CN101197424B (zh)
TW (1) TW200838008A (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010072562A1 (en) * 2008-12-23 2010-07-01 Solvay Sa Process for producing a component layer for organic light emitting diodes
DE102009022117A1 (de) * 2009-05-20 2010-11-25 Siemens Aktiengesellschaft Material für eine Lochtransportschicht mit p-Dotierung
CN102449800A (zh) * 2009-05-29 2012-05-09 株式会社半导体能源研究所 发光元件、发光装置、照明装置以及电子设备
JP5557663B2 (ja) * 2009-09-11 2014-07-23 富士フイルム株式会社 光電変換素子及びその製造方法、光センサ、並びに撮像素子及びそれらの駆動方法
US20120132272A1 (en) 2010-11-19 2012-05-31 Alliance For Sustainable Energy, Llc. Solution processed metal oxide thin film hole transport layers for high performance organic solar cells
WO2012160714A1 (ja) * 2011-05-20 2012-11-29 国立大学法人山形大学 有機電子デバイス及びその製造方法
EP4242216B1 (en) * 2011-06-22 2025-11-12 Novaled GmbH Electronic device and compound
JP6108355B2 (ja) * 2012-02-15 2017-04-05 国立大学法人山形大学 有機エレクトロルミネッセンス素子
EP2965366B9 (en) 2013-03-07 2024-08-14 SolarWindow Technologies, Inc. Methods for producing thin film charge selective transport layers
GB2514818B (en) * 2013-06-05 2015-12-16 Cambridge Display Tech Ltd Polymer and organic electronic device
CN104167491B (zh) * 2014-07-02 2017-10-17 苏州大学 一种金属氧化物水溶性薄膜的制备方法
CN105244447B (zh) * 2015-09-01 2018-09-14 华南理工大学 一种平面异质结有机发光二极管及其制备方法
CN105261706B (zh) * 2015-09-01 2018-07-10 华南理工大学 一种平面异质结敏化的有机荧光发光二极管及其制备方法
KR102507947B1 (ko) * 2015-10-15 2023-03-09 삼성전자주식회사 케이스 및 이를 포함하는 전자 장치
CN107195791B (zh) * 2017-05-03 2019-01-01 武汉华星光电技术有限公司 有机发光显示装置
KR102244800B1 (ko) * 2017-12-11 2021-04-26 주식회사 엘지화학 유기 발광 소자 및 이의 제조방법
KR102540847B1 (ko) * 2018-03-14 2023-06-05 삼성전자주식회사 전계 발광 소자 및 이를 포함하는 표시 장치

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1086410A (en) 1977-08-02 1980-09-23 Ching W. Tang Organic photovoltaic elements
US4281053A (en) 1979-01-22 1981-07-28 Eastman Kodak Company Multilayer organic photovoltaic elements
JPH08330073A (ja) * 1995-03-27 1996-12-13 Matsushita Electric Ind Co Ltd 有機発光素子及びその製造方法
JPH10162955A (ja) 1996-11-28 1998-06-19 Seiko Precision Kk 有機ｅｌ素子の製造方法
KR100261537B1 (ko) * 1997-12-26 2000-07-15 김덕중 안정성이 우수한 유기전기발광소자
US20030148024A1 (en) * 2001-10-05 2003-08-07 Kodas Toivo T. Low viscosity precursor compositons and methods for the depositon of conductive electronic features
JP2000077185A (ja) 1998-08-28 2000-03-14 Asahi Chem Ind Co Ltd 有機エレクトロルミネッセンス素子
US6274412B1 (en) * 1998-12-21 2001-08-14 Parelec, Inc. Material and method for printing high conductivity electrical conductors and other components on thin film transistor arrays
JP3503579B2 (ja) * 1999-12-08 2004-03-08 日本電気株式会社 有機ｅｌ素子及びその製造方法
KR100441434B1 (ko) * 2001-08-01 2004-07-22 삼성에스디아이 주식회사 유기 화합물 유도체 박막을 포함하는 유기 전계 발광 소자및 그 소자의 제조 방법
ATE404609T1 (de) * 2002-09-24 2008-08-15 Du Pont Wasserdispergierbare polythiophene hergestellt unter verwendung von kolloiden auf basis von polymersäuren
US7012364B2 (en) 2002-10-01 2006-03-14 Dai Nippon Printing Co., Ltd. Organic electroluminescent display
JP4432358B2 (ja) 2003-05-01 2010-03-17 セイコーエプソン株式会社 電気光学装置の製造方法
KR100632632B1 (ko) * 2004-05-28 2006-10-12 삼성전자주식회사 나노 결정의 다층 박막 제조 방법 및 이를 이용한유·무기 하이브리드 전기 발광 소자
US8173996B2 (en) 2004-10-11 2012-05-08 Cambridge Display Technology Limited Polar semiconductor hole transporting material
JP4306599B2 (ja) 2004-12-15 2009-08-05 セイコーエプソン株式会社 パターン形成基板、電気光学装置及び電気光学装置の製造方法
ATE555506T1 (de) 2004-12-24 2012-05-15 Cdt Oxford Ltd Licht emittierende einrichtung
WO2006094101A1 (en) * 2005-03-01 2006-09-08 The Regents Of The University Of California Multilayer polymer light-emitting diodes for solid state lighting applications

Also Published As

Publication number Publication date
TW200838008A (en) 2008-09-16
JP4723555B2 (ja) 2011-07-13
KR20080051072A (ko) 2008-06-10
US8101230B2 (en) 2012-01-24
CN101197424B (zh) 2010-07-14
JP2009026730A (ja) 2009-02-05
US20080145520A1 (en) 2008-06-19
KR100921288B1 (ko) 2009-10-09
CN101197424A (zh) 2008-06-11

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