TWI368108B - Sublayer coating-forming composition containing naphthalene ring having halogen atom for lithography - Google Patents

Sublayer coating-forming composition containing naphthalene ring having halogen atom for lithography

Info

Publication number
TWI368108B
TWI368108B TW094122391A TW94122391A TWI368108B TW I368108 B TWI368108 B TW I368108B TW 094122391 A TW094122391 A TW 094122391A TW 94122391 A TW94122391 A TW 94122391A TW I368108 B TWI368108 B TW I368108B
Authority
TW
Taiwan
Prior art keywords
lithography
halogen atom
composition containing
forming composition
naphthalene ring
Prior art date
Application number
TW094122391A
Other languages
English (en)
Other versions
TW200606592A (en
Inventor
Satoshi Takei
Takahiro Sakaguchi
Tomoyuki Enomoto
Original Assignee
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Ind Ltd filed Critical Nissan Chemical Ind Ltd
Publication of TW200606592A publication Critical patent/TW200606592A/zh
Application granted granted Critical
Publication of TWI368108B publication Critical patent/TWI368108B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/02—Monomers containing only one unsaturated aliphatic radical
    • C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F216/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
    • C08F216/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an alcohol radical
    • C08F216/04—Acyclic compounds
    • C08F216/06—Polyvinyl alcohol ; Vinyl alcohol
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F216/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
    • C08F216/12—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an ether radical
    • C08F216/14—Monomers containing only one unsaturated aliphatic radical
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/281—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing only one oxygen, e.g. furfuryl (meth)acrylate or 2-methoxyethyl (meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/32—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
    • C08F220/325—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals containing glycidyl radical, e.g. glycidyl (meth)acrylate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
TW094122391A 2004-07-02 2005-07-01 Sublayer coating-forming composition containing naphthalene ring having halogen atom for lithography TWI368108B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004196955 2004-07-02

Publications (2)

Publication Number Publication Date
TW200606592A TW200606592A (en) 2006-02-16
TWI368108B true TWI368108B (en) 2012-07-11

Family

ID=35782661

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094122391A TWI368108B (en) 2004-07-02 2005-07-01 Sublayer coating-forming composition containing naphthalene ring having halogen atom for lithography

Country Status (7)

Country Link
US (1) US8088546B2 (zh)
EP (1) EP1780600B1 (zh)
JP (1) JP4835854B2 (zh)
KR (1) KR101216403B1 (zh)
CN (1) CN1977220B (zh)
TW (1) TWI368108B (zh)
WO (1) WO2006003850A1 (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4602012B2 (ja) * 2004-07-12 2010-12-22 新日鐵化学株式会社 ５，８−ジブロモ−２−ビニルナフタレン及びその製造方法
US7326523B2 (en) * 2004-12-16 2008-02-05 International Business Machines Corporation Low refractive index polymers as underlayers for silicon-containing photoresists
EP1879070A4 (en) * 2005-04-19 2010-09-29 Nissan Chemical Ind Ltd RESERVE SUB-LAYER COMPOSITION FOR FORMATION OF PHOTOPOLYMERIZED CURVED RESERVE UNDERLAYER
CN101248391B (zh) * 2005-08-25 2013-03-27 日产化学工业株式会社 含有乙烯基萘树脂衍生物的形成光刻用涂布型下层膜的组合物
EP1906249A3 (en) * 2006-09-26 2008-12-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective coating compositions for photolithography
US7416834B2 (en) * 2006-09-27 2008-08-26 Az Electronic Materials Usa Corp. Antireflective coating compositions
US8227172B2 (en) * 2006-10-12 2012-07-24 Nissan Chemical Industries, Ltd. Method of producing semiconductor device using resist underlayer film by photo-crosslinking curing
CN101541880B (zh) * 2006-11-28 2011-05-04 日产化学工业株式会社 含有含芳香族稠环的树脂的形成光刻用抗蚀剂下层膜的组合物
KR101462508B1 (ko) * 2007-02-27 2014-11-17 닛산 가가쿠 고교 가부시키 가이샤 전자선 리소그래피용 레지스트 하층막 형성 조성물
JP5093525B2 (ja) * 2007-05-17 2012-12-12 日産化学工業株式会社 感光性樹脂及びマイクロレンズの製造方法
US8426112B2 (en) * 2007-09-11 2013-04-23 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing polymer having nitrogen-containing silyl group
DE202007016022U1 (de) 2007-11-16 2009-03-19 Friatec Ag Vorrichtung zur spanabhebenden Oberflächenbehandlung von Kunststoffhobeln
US8039201B2 (en) * 2007-11-21 2011-10-18 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
WO2009128513A1 (ja) * 2008-04-18 2009-10-22 日産化学工業株式会社 芳香族縮合環を含有する樹脂を含むリソグラフィー用レジスト下層膜形成組成物
US10437150B2 (en) * 2008-11-27 2019-10-08 Nissan Chemical Industries, Ltd. Composition for forming resist underlayer film with reduced outgassing
JP5477593B2 (ja) * 2008-12-26 2014-04-23 日産化学工業株式会社 レジスト下層膜形成組成物用添加剤及びそれを含むレジスト下層膜形成用組成物
JP5399098B2 (ja) * 2009-03-02 2014-01-29 東ソー株式会社 ブロック共重合体及びその製造方法
JP5472072B2 (ja) * 2010-01-13 2014-04-16 信越化学工業株式会社 ネガ型レジスト組成物及びパターン形成方法
JP6146305B2 (ja) * 2011-10-12 2017-06-14 Jsr株式会社 パターン形成方法
KR20180027989A (ko) * 2016-09-07 2018-03-15 동우 화인켐 주식회사 하드마스크용 조성물
TWI786237B (zh) * 2018-11-21 2022-12-11 日商日產化學股份有限公司 熱硬化性樹脂組成物

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3671608A (en) * 1969-11-21 1972-06-20 Copolymer Rubber & Chem Corp Plastic composition and method of preparing same
US4178319A (en) * 1978-12-26 1979-12-11 Ford Motor Company High solids coating composition with oligomeric hydroxyphosphate catalyst-A
JP2694097B2 (ja) * 1992-03-03 1997-12-24 インターナショナル・ビジネス・マシーンズ・コーポレイション 反射防止コーティング組成物
JP3743986B2 (ja) 1996-04-09 2006-02-08 Ｊｓｒ株式会社 感放射線性樹脂組成物
US6228552B1 (en) 1996-09-13 2001-05-08 Kabushiki Kaisha Toshiba Photo-sensitive material, method of forming a resist pattern and manufacturing an electronic parts using photo-sensitive material
JP3708688B2 (ja) 1996-09-13 2005-10-19 株式会社東芝 レジストパターン形成方法
JPH1090908A (ja) 1996-09-17 1998-04-10 Fuji Photo Film Co Ltd 反射防止膜材料用組成物
US5733714A (en) * 1996-09-30 1998-03-31 Clariant Finance (Bvi) Limited Antireflective coating for photoresist compositions
US6165684A (en) 1996-12-24 2000-12-26 Fuji Photo Film Co., Ltd. Bottom anti-reflective coating material composition and method for forming resist pattern using the same
JP3632875B2 (ja) 1996-12-24 2005-03-23 富士写真フイルム株式会社 反射防止膜材料用組成物
TW473653B (en) * 1997-05-27 2002-01-21 Clariant Japan Kk Composition for anti-reflective film or photo absorption film and compound used therein
JP2006291219A (ja) * 1997-05-27 2006-10-26 Az Electronic Materials Kk 反射防止膜又は光吸収膜の形成に有用な重合体
US5935760A (en) 1997-10-20 1999-08-10 Brewer Science Inc. Thermosetting polyester anti-reflective coatings for multilayer photoresist processes
US6190839B1 (en) * 1998-01-15 2001-02-20 Shipley Company, L.L.C. High conformality antireflective coating compositions
JP3771705B2 (ja) * 1998-03-12 2006-04-26 互応化学工業株式会社 感光性樹脂組成物及びプリント配線板製造用フォトレジストインク
US6303266B1 (en) * 1998-09-24 2001-10-16 Kabushiki Kaisha Toshiba Resin useful for resist, resist composition and pattern forming process using the same
JP3504156B2 (ja) * 1998-09-24 2004-03-08 株式会社東芝 半導体装置の製造方法、感光性組成物及びパターン形成方法
US6461717B1 (en) 2000-04-24 2002-10-08 Shipley Company, L.L.C. Aperture fill
JP3971088B2 (ja) 2000-06-30 2007-09-05 株式会社東芝 パターン形成方法
JP4654544B2 (ja) 2000-07-12 2011-03-23 日産化学工業株式会社 リソグラフィー用ギャップフィル材形成組成物
EP1172695A1 (en) 2000-07-14 2002-01-16 Shipley Company LLC Barrier layer
JP3568158B2 (ja) 2000-12-20 2004-09-22 東京応化工業株式会社 保護膜形成材料
US20030215736A1 (en) * 2002-01-09 2003-11-20 Oberlander Joseph E. Negative-working photoimageable bottom antireflective coating
WO2004092840A1 (ja) * 2003-04-17 2004-10-28 Nissan Chemical Industries, Ltd. 多孔質下層膜及び多孔質下層膜を形成するための下層膜形成組成物
JP4179116B2 (ja) * 2003-09-11 2008-11-12 Ｊｓｒ株式会社 反射防止膜形成組成物及び反射防止膜の製造方法

Also Published As

Publication number Publication date
US20070238029A1 (en) 2007-10-11
JP4835854B2 (ja) 2011-12-14
EP1780600A4 (en) 2010-07-28
CN1977220A (zh) 2007-06-06
JPWO2006003850A1 (ja) 2008-04-17
EP1780600A1 (en) 2007-05-02
WO2006003850A1 (ja) 2006-01-12
EP1780600B1 (en) 2014-02-26
CN1977220B (zh) 2010-12-01
KR101216403B1 (ko) 2012-12-28
US8088546B2 (en) 2012-01-03
KR20070035573A (ko) 2007-03-30
TW200606592A (en) 2006-02-16

Similar Documents

Publication Publication Date Title
TWI368108B (en) Sublayer coating-forming composition containing naphthalene ring having halogen atom for lithography
AU301937S (en) Elbow for mask
HK1206434A1 (zh) 用於浸沒式光刻的晶片台
TWI368823B (en) Coating compositions for use with an overcoated photoresist
TWI340296B (en) Coating compositions for use with an overcoated photoresist
EP1739485A4 (en) RESISTANT COMPOSITION
TWI370329B (en) Sublayer coating-forming composition containing metal oxide for lithography
IL203331A (en) Compounds for the modulation of kinases, preparation and kit containing them and their use
ZA200606951B (en) Catalyst carrier and catalyst composition processes for their preparation and their use
IL207967A0 (en) Methods, compositions, and apparatuses for forming macrocyclic compounds
IL182496A0 (en) Decal transfer lithography
SG123748A1 (en) Imprint lithography
EP1752827A4 (en) FLUSH FLUID FOR LITHOGRAPHY
HK1121132A1 (zh) 用於平版印刷版塗料的新材料、含這些新材料的平版印刷版和塗料以及製備方法和用途
TWI368826B (en) Underlayer coating forming composition for lithography containing cyclodextrin compound
EP1883455A4 (en) BOW PIECE FOR A MASK SYSTEM
IL194718A0 (en) Process for the preparation of cinacalcet base
EP1773956A4 (en) POWDER COATING
EP1954685A4 (en) FUROXANE COMPOUNDS, COMPOSITIONS AND METHODS OF USE
EP2003174A4 (en) HARD COATING COMPOSITION FOR A METAL BASIS
GB0428009D0 (en) Intumescent coating compositions
EP1811342A4 (en) SCHWEFELATOME CONTAINING COMPOUND FOR GENERATING A LITHOGRAPHIC ANTIREFLEX FILM
IL181960A0 (en) Coating composition
SG122005A1 (en) Lithographic apparatus
GB0423297D0 (en) Coating composition