TWI368108B - Sublayer coating-forming composition containing naphthalene ring having halogen atom for lithography - Google Patents
Sublayer coating-forming composition containing naphthalene ring having halogen atom for lithographyInfo
- Publication number
- TWI368108B TWI368108B TW094122391A TW94122391A TWI368108B TW I368108 B TWI368108 B TW I368108B TW 094122391 A TW094122391 A TW 094122391A TW 94122391 A TW94122391 A TW 94122391A TW I368108 B TWI368108 B TW I368108B
- Authority
- TW
- Taiwan
- Prior art keywords
- lithography
- halogen atom
- composition containing
- forming composition
- naphthalene ring
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F12/02—Monomers containing only one unsaturated aliphatic radical
- C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F216/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
- C08F216/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an alcohol radical
- C08F216/04—Acyclic compounds
- C08F216/06—Polyvinyl alcohol ; Vinyl alcohol
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F216/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
- C08F216/12—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an ether radical
- C08F216/14—Monomers containing only one unsaturated aliphatic radical
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/281—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing only one oxygen, e.g. furfuryl (meth)acrylate or 2-methoxyethyl (meth)acrylate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/32—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
- C08F220/325—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals containing glycidyl radical, e.g. glycidyl (meth)acrylate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Materials For Photolithography (AREA)
- Paints Or Removers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004196955 | 2004-07-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200606592A TW200606592A (en) | 2006-02-16 |
TWI368108B true TWI368108B (en) | 2012-07-11 |
Family
ID=35782661
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094122391A TWI368108B (en) | 2004-07-02 | 2005-07-01 | Sublayer coating-forming composition containing naphthalene ring having halogen atom for lithography |
Country Status (7)
Country | Link |
---|---|
US (1) | US8088546B2 (zh) |
EP (1) | EP1780600B1 (zh) |
JP (1) | JP4835854B2 (zh) |
KR (1) | KR101216403B1 (zh) |
CN (1) | CN1977220B (zh) |
TW (1) | TWI368108B (zh) |
WO (1) | WO2006003850A1 (zh) |
Families Citing this family (21)
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JP4602012B2 (ja) * | 2004-07-12 | 2010-12-22 | 新日鐵化学株式会社 | 5,8−ジブロモ−2−ビニルナフタレン及びその製造方法 |
US7326523B2 (en) * | 2004-12-16 | 2008-02-05 | International Business Machines Corporation | Low refractive index polymers as underlayers for silicon-containing photoresists |
EP1879070A4 (en) * | 2005-04-19 | 2010-09-29 | Nissan Chemical Ind Ltd | RESERVE SUB-LAYER COMPOSITION FOR FORMATION OF PHOTOPOLYMERIZED CURVED RESERVE UNDERLAYER |
CN101248391B (zh) * | 2005-08-25 | 2013-03-27 | 日产化学工业株式会社 | 含有乙烯基萘树脂衍生物的形成光刻用涂布型下层膜的组合物 |
EP1906249A3 (en) * | 2006-09-26 | 2008-12-24 | Rohm and Haas Electronic Materials, L.L.C. | Antireflective coating compositions for photolithography |
US7416834B2 (en) * | 2006-09-27 | 2008-08-26 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
US8227172B2 (en) * | 2006-10-12 | 2012-07-24 | Nissan Chemical Industries, Ltd. | Method of producing semiconductor device using resist underlayer film by photo-crosslinking curing |
CN101541880B (zh) * | 2006-11-28 | 2011-05-04 | 日产化学工业株式会社 | 含有含芳香族稠环的树脂的形成光刻用抗蚀剂下层膜的组合物 |
KR101462508B1 (ko) * | 2007-02-27 | 2014-11-17 | 닛산 가가쿠 고교 가부시키 가이샤 | 전자선 리소그래피용 레지스트 하층막 형성 조성물 |
JP5093525B2 (ja) * | 2007-05-17 | 2012-12-12 | 日産化学工業株式会社 | 感光性樹脂及びマイクロレンズの製造方法 |
US8426112B2 (en) * | 2007-09-11 | 2013-04-23 | Nissan Chemical Industries, Ltd. | Resist underlayer film forming composition containing polymer having nitrogen-containing silyl group |
DE202007016022U1 (de) | 2007-11-16 | 2009-03-19 | Friatec Ag | Vorrichtung zur spanabhebenden Oberflächenbehandlung von Kunststoffhobeln |
US8039201B2 (en) * | 2007-11-21 | 2011-10-18 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
WO2009128513A1 (ja) * | 2008-04-18 | 2009-10-22 | 日産化学工業株式会社 | 芳香族縮合環を含有する樹脂を含むリソグラフィー用レジスト下層膜形成組成物 |
US10437150B2 (en) * | 2008-11-27 | 2019-10-08 | Nissan Chemical Industries, Ltd. | Composition for forming resist underlayer film with reduced outgassing |
JP5477593B2 (ja) * | 2008-12-26 | 2014-04-23 | 日産化学工業株式会社 | レジスト下層膜形成組成物用添加剤及びそれを含むレジスト下層膜形成用組成物 |
JP5399098B2 (ja) * | 2009-03-02 | 2014-01-29 | 東ソー株式会社 | ブロック共重合体及びその製造方法 |
JP5472072B2 (ja) * | 2010-01-13 | 2014-04-16 | 信越化学工業株式会社 | ネガ型レジスト組成物及びパターン形成方法 |
JP6146305B2 (ja) * | 2011-10-12 | 2017-06-14 | Jsr株式会社 | パターン形成方法 |
KR20180027989A (ko) * | 2016-09-07 | 2018-03-15 | 동우 화인켐 주식회사 | 하드마스크용 조성물 |
TWI786237B (zh) * | 2018-11-21 | 2022-12-11 | 日商日產化學股份有限公司 | 熱硬化性樹脂組成物 |
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US3671608A (en) * | 1969-11-21 | 1972-06-20 | Copolymer Rubber & Chem Corp | Plastic composition and method of preparing same |
US4178319A (en) * | 1978-12-26 | 1979-12-11 | Ford Motor Company | High solids coating composition with oligomeric hydroxyphosphate catalyst-A |
JP2694097B2 (ja) * | 1992-03-03 | 1997-12-24 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 反射防止コーティング組成物 |
JP3743986B2 (ja) | 1996-04-09 | 2006-02-08 | Jsr株式会社 | 感放射線性樹脂組成物 |
US6228552B1 (en) | 1996-09-13 | 2001-05-08 | Kabushiki Kaisha Toshiba | Photo-sensitive material, method of forming a resist pattern and manufacturing an electronic parts using photo-sensitive material |
JP3708688B2 (ja) | 1996-09-13 | 2005-10-19 | 株式会社東芝 | レジストパターン形成方法 |
JPH1090908A (ja) | 1996-09-17 | 1998-04-10 | Fuji Photo Film Co Ltd | 反射防止膜材料用組成物 |
US5733714A (en) * | 1996-09-30 | 1998-03-31 | Clariant Finance (Bvi) Limited | Antireflective coating for photoresist compositions |
US6165684A (en) | 1996-12-24 | 2000-12-26 | Fuji Photo Film Co., Ltd. | Bottom anti-reflective coating material composition and method for forming resist pattern using the same |
JP3632875B2 (ja) | 1996-12-24 | 2005-03-23 | 富士写真フイルム株式会社 | 反射防止膜材料用組成物 |
TW473653B (en) * | 1997-05-27 | 2002-01-21 | Clariant Japan Kk | Composition for anti-reflective film or photo absorption film and compound used therein |
JP2006291219A (ja) * | 1997-05-27 | 2006-10-26 | Az Electronic Materials Kk | 反射防止膜又は光吸収膜の形成に有用な重合体 |
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US6190839B1 (en) * | 1998-01-15 | 2001-02-20 | Shipley Company, L.L.C. | High conformality antireflective coating compositions |
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US6461717B1 (en) | 2000-04-24 | 2002-10-08 | Shipley Company, L.L.C. | Aperture fill |
JP3971088B2 (ja) | 2000-06-30 | 2007-09-05 | 株式会社東芝 | パターン形成方法 |
JP4654544B2 (ja) | 2000-07-12 | 2011-03-23 | 日産化学工業株式会社 | リソグラフィー用ギャップフィル材形成組成物 |
EP1172695A1 (en) | 2000-07-14 | 2002-01-16 | Shipley Company LLC | Barrier layer |
JP3568158B2 (ja) | 2000-12-20 | 2004-09-22 | 東京応化工業株式会社 | 保護膜形成材料 |
US20030215736A1 (en) * | 2002-01-09 | 2003-11-20 | Oberlander Joseph E. | Negative-working photoimageable bottom antireflective coating |
WO2004092840A1 (ja) * | 2003-04-17 | 2004-10-28 | Nissan Chemical Industries, Ltd. | 多孔質下層膜及び多孔質下層膜を形成するための下層膜形成組成物 |
JP4179116B2 (ja) * | 2003-09-11 | 2008-11-12 | Jsr株式会社 | 反射防止膜形成組成物及び反射防止膜の製造方法 |
-
2005
- 2005-06-24 KR KR1020077001219A patent/KR101216403B1/ko active IP Right Grant
- 2005-06-24 JP JP2006528636A patent/JP4835854B2/ja active Active
- 2005-06-24 CN CN2005800214442A patent/CN1977220B/zh active Active
- 2005-06-24 WO PCT/JP2005/011645 patent/WO2006003850A1/ja active Application Filing
- 2005-06-24 US US11/630,891 patent/US8088546B2/en active Active
- 2005-06-24 EP EP05765125.9A patent/EP1780600B1/en active Active
- 2005-07-01 TW TW094122391A patent/TWI368108B/zh active
Also Published As
Publication number | Publication date |
---|---|
US20070238029A1 (en) | 2007-10-11 |
JP4835854B2 (ja) | 2011-12-14 |
EP1780600A4 (en) | 2010-07-28 |
CN1977220A (zh) | 2007-06-06 |
JPWO2006003850A1 (ja) | 2008-04-17 |
EP1780600A1 (en) | 2007-05-02 |
WO2006003850A1 (ja) | 2006-01-12 |
EP1780600B1 (en) | 2014-02-26 |
CN1977220B (zh) | 2010-12-01 |
KR101216403B1 (ko) | 2012-12-28 |
US8088546B2 (en) | 2012-01-03 |
KR20070035573A (ko) | 2007-03-30 |
TW200606592A (en) | 2006-02-16 |
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