TWI365510B - Field effect transistor having increased carrier mobility - Google Patents

Field effect transistor having increased carrier mobility

Info

Publication number
TWI365510B
TWI365510B TW093124153A TW93124153A TWI365510B TW I365510 B TWI365510 B TW I365510B TW 093124153 A TW093124153 A TW 093124153A TW 93124153 A TW93124153 A TW 93124153A TW I365510 B TWI365510 B TW I365510B
Authority
TW
Taiwan
Prior art keywords
field effect
effect transistor
carrier mobility
increased carrier
increased
Prior art date
Application number
TW093124153A
Other languages
English (en)
Other versions
TW200509310A (en
Inventor
Qi Xiang
Boon-Yong Ang
Jung-Suk Goo
Original Assignee
Globalfoundries Us Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Globalfoundries Us Inc filed Critical Globalfoundries Us Inc
Publication of TW200509310A publication Critical patent/TW200509310A/zh
Application granted granted Critical
Publication of TWI365510B publication Critical patent/TWI365510B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7845—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being a conductive material, e.g. silicided S/D or Gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/938—Lattice strain control or utilization

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
TW093124153A 2003-08-18 2004-08-12 Field effect transistor having increased carrier mobility TWI365510B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/643,461 US7923785B2 (en) 2003-08-18 2003-08-18 Field effect transistor having increased carrier mobility

Publications (2)

Publication Number Publication Date
TW200509310A TW200509310A (en) 2005-03-01
TWI365510B true TWI365510B (en) 2012-06-01

Family

ID=34193882

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093124153A TWI365510B (en) 2003-08-18 2004-08-12 Field effect transistor having increased carrier mobility

Country Status (8)

Country Link
US (1) US7923785B2 (zh)
JP (1) JP2007503117A (zh)
KR (1) KR20060064631A (zh)
CN (1) CN1839480B (zh)
DE (1) DE112004001489B4 (zh)
GB (1) GB2420228B (zh)
TW (1) TWI365510B (zh)
WO (1) WO2005020323A2 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7365015B2 (en) * 2004-07-13 2008-04-29 Lsi Logic Corporation Damascene replacement metal gate process with controlled gate profile and length using Si1-xGex as sacrificial material
US7902058B2 (en) * 2004-09-29 2011-03-08 Intel Corporation Inducing strain in the channels of metal gate transistors
US20070108529A1 (en) * 2005-11-14 2007-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Strained gate electrodes in semiconductor devices
US7842977B2 (en) * 2007-02-15 2010-11-30 Qimonda Ag Gate electrode structure, MOS field effect transistors and methods of manufacturing the same
US7745847B2 (en) 2007-08-09 2010-06-29 United Microelectronics Corp. Metal oxide semiconductor transistor
WO2018035086A1 (en) * 2016-08-15 2018-02-22 Integrated Nano-Technologies, Inc. Systems and methods for electrical sensing of biomolecular targets

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51150980A (en) 1975-06-20 1976-12-24 Hitachi Ltd Semiconductor device
JPS524789A (en) 1975-06-30 1977-01-14 Fujitsu Ltd Semiconductor equipment
JPS5882569A (ja) * 1981-11-12 1983-05-18 Toshiba Corp 電界効果トランジスタ
JPS62239582A (ja) 1986-04-10 1987-10-20 Nec Corp 耐放射線性が強化された半導体装置の製造方法
US5557136A (en) * 1991-04-26 1996-09-17 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
US5267194A (en) * 1991-08-30 1993-11-30 Winbond Electronics Corporation Electrically erasable programmable read-only-memory cell with side-wall floating gate
JP3068270B2 (ja) 1991-09-24 2000-07-24 日本電気株式会社 Ｍｏｓ型電界効果トランジスタ及びその製造方法
JPH0590516A (ja) * 1991-09-26 1993-04-09 Nissan Motor Co Ltd Ｍｏｓ型半導体差動増幅回路
JPH06104268A (ja) 1992-09-21 1994-04-15 Mitsubishi Electric Corp ゲッタリング効果を持たせた半導体基板およびその製造方法
JPH07142719A (ja) * 1993-06-17 1995-06-02 Kawasaki Steel Corp Ｍｏｓトランジスタの製造方法
JPH07135208A (ja) * 1993-11-10 1995-05-23 Sony Corp 絶縁膜の形成方法
JP3253438B2 (ja) * 1993-12-21 2002-02-04 株式会社東芝 半導体装置
JP2643833B2 (ja) * 1994-05-30 1997-08-20 日本電気株式会社 半導体記憶装置及びその製造方法
US6399970B2 (en) * 1996-09-17 2002-06-04 Matsushita Electric Industrial Co., Ltd. FET having a Si/SiGeC heterojunction channel
US6262462B1 (en) 1998-06-22 2001-07-17 Motorola, Inc. Enhanced dielectric constant gate insulator
JP2000223703A (ja) 1999-01-29 2000-08-11 Toshiba Corp 半導体装置及びその製造方法
US6391732B1 (en) 2000-06-16 2002-05-21 Chartered Semiconductor Manufacturing Ltd. Method to form self-aligned, L-shaped sidewall spacers
JP3875477B2 (ja) 2000-09-25 2007-01-31 株式会社東芝 半導体素子
US20020100942A1 (en) * 2000-12-04 2002-08-01 Fitzgerald Eugene A. CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
JP2003086708A (ja) 2000-12-08 2003-03-20 Hitachi Ltd 半導体装置及びその製造方法
US6603181B2 (en) * 2001-01-16 2003-08-05 International Business Machines Corporation MOS device having a passivated semiconductor-dielectric interface
JP2002246591A (ja) * 2001-02-19 2002-08-30 Hitachi Ltd 半導体装置とその製造方法
KR100493206B1 (ko) 2001-01-16 2005-06-03 가부시키가이샤 히타치세이사쿠쇼 반도체장치 및 그 제조방법
JP3594140B2 (ja) * 2002-06-26 2004-11-24 沖電気工業株式会社 半導体装置の製造方法
KR101030068B1 (ko) * 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
US6864556B1 (en) * 2002-07-31 2005-03-08 Advanced Micro Devices, Inc. CVD organic polymer film for advanced gate patterning
US6982433B2 (en) 2003-06-12 2006-01-03 Intel Corporation Gate-induced strain for MOS performance improvement
CN101426474A (zh) * 2006-04-26 2009-05-06 皇家飞利浦电子股份有限公司 用于物质的受控释放的装置和释放物质的方法
US7643202B2 (en) * 2007-05-09 2010-01-05 Qualcomm Mems Technologies, Inc. Microelectromechanical system having a dielectric movable membrane and a mirror

Also Published As

Publication number Publication date
GB2420228A (en) 2006-05-17
WO2005020323A3 (en) 2005-05-06
GB0602327D0 (en) 2006-03-15
CN1839480A (zh) 2006-09-27
KR20060064631A (ko) 2006-06-13
GB2420228B (en) 2007-05-16
US20050040477A1 (en) 2005-02-24
CN1839480B (zh) 2013-01-02
WO2005020323A2 (en) 2005-03-03
TW200509310A (en) 2005-03-01
JP2007503117A (ja) 2007-02-15
DE112004001489T5 (de) 2006-07-20
US7923785B2 (en) 2011-04-12
DE112004001489B4 (de) 2017-10-05

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MM4A Annulment or lapse of patent due to non-payment of fees