TWI364463B - - Google Patents

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Publication number
TWI364463B
TWI364463B TW094115817A TW94115817A TWI364463B TW I364463 B TWI364463 B TW I364463B TW 094115817 A TW094115817 A TW 094115817A TW 94115817 A TW94115817 A TW 94115817A TW I364463 B TWI364463 B TW I364463B
Authority
TW
Taiwan
Prior art keywords
evaporation
organic material
evaporation source
port
vapor
Prior art date
Application number
TW094115817A
Other languages
English (en)
Chinese (zh)
Other versions
TW200606268A (en
Inventor
Toshio Negishi
Tatsuhiko Koshida
Koji Hane
Toshimitsu Nakamura
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of TW200606268A publication Critical patent/TW200606268A/zh
Application granted granted Critical
Publication of TWI364463B publication Critical patent/TWI364463B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
TW094115817A 2004-05-17 2005-05-16 Evaporation source for organic material and organic vapor deposition system TW200606268A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004146181A JP4558375B2 (ja) 2004-05-17 2004-05-17 有機材料用蒸発源及び有機蒸着装置

Publications (2)

Publication Number Publication Date
TW200606268A TW200606268A (en) 2006-02-16
TWI364463B true TWI364463B (ko) 2012-05-21

Family

ID=35394173

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094115817A TW200606268A (en) 2004-05-17 2005-05-16 Evaporation source for organic material and organic vapor deposition system

Country Status (5)

Country Link
JP (1) JP4558375B2 (ko)
KR (1) KR101188163B1 (ko)
CN (1) CN1950536A (ko)
TW (1) TW200606268A (ko)
WO (1) WO2005111259A1 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006324649A (ja) * 2005-04-22 2006-11-30 Semiconductor Energy Lab Co Ltd 有機半導体装置の作製方法
WO2008018705A1 (en) * 2006-08-08 2008-02-14 Soonchunhyang University Industry Academy Cooperation Foundation Apparatus for depositing thin films over large-area substrates
WO2009034916A1 (ja) * 2007-09-10 2009-03-19 Ulvac, Inc. 蒸気放出装置、有機薄膜蒸着装置及び有機薄膜蒸着方法
JP5685433B2 (ja) * 2010-12-15 2015-03-18 株式会社アルバック 蒸着装置及び蒸着方法
CN102703866A (zh) * 2012-01-13 2012-10-03 东莞宏威数码机械有限公司 线性蒸发源装置及具有该装置的蒸发速率精控式蒸发设备
CN103436846B (zh) * 2013-09-18 2016-02-03 河南理工大学 高体积分数SiC铝基复合材料表面离子镀铝膜层的方法
JP2015137409A (ja) * 2014-01-23 2015-07-30 スタンレー電気株式会社 坩堝及び真空蒸着装置
CN103849837B (zh) * 2014-03-24 2016-02-10 四川虹视显示技术有限公司 一种蒸发源装置
CN105002465B (zh) * 2015-08-14 2017-12-19 西安工业大学 一种热蒸发镀膜方法及其装置
CN105132861A (zh) 2015-10-13 2015-12-09 京东方科技集团股份有限公司 一种蒸镀掩膜版以及蒸镀设备
JP6709273B2 (ja) * 2018-03-28 2020-06-10 公益財団法人福岡県産業・科学技術振興財団 蒸着装置
JP7217635B2 (ja) * 2019-01-11 2023-02-03 株式会社アルバック 蒸着源、成膜装置、及び蒸着方法
CN110629168B (zh) * 2019-10-30 2021-11-02 东北大学 一种真空镀膜机的蒸发装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3257106B2 (ja) * 1992-12-29 2002-02-18 ソニー株式会社 分子線結晶成長装置
JP2001081548A (ja) * 1999-09-14 2001-03-27 Asahi Optical Co Ltd 成膜装置および成膜方法
JP2003286563A (ja) * 2002-03-28 2003-10-10 Sony Corp 成膜装置および成膜方法

Also Published As

Publication number Publication date
TW200606268A (en) 2006-02-16
JP2005325424A (ja) 2005-11-24
CN1950536A (zh) 2007-04-18
JP4558375B2 (ja) 2010-10-06
KR101188163B1 (ko) 2012-10-05
KR20070012314A (ko) 2007-01-25
WO2005111259A1 (ja) 2005-11-24

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