1364463 (1) 九、發明說明 【發明所屬之技術領域】 本發明，是關於例如：在製造有機EL元件等時，要在 基板上形成有機化合物蒸鍍膜用的有機材料用蒸發源及有 機蒸鍍裝置。 【先前技術】 第7圖，是習知有機EL元件成膜用的有機蒸鍍裝置槪 略構成圖。 如第7圖所示，該有機蒸鍍裝置10，是於真空槽1〇2的 下部配設著蒸發源103的同時，於該蒸發源103的上方配置 著做爲成膜對象物的基板104。 接著，是將蒸發源103所蒸發形成的有機材料的蒸氣 :镉著遮罩105蒸鍍在基板104上形成爲指定圖樣的有機薄膜 〇 然而’近年來，針對有機EL元件的技術領域，是有要 能對應大型基板的量產化技術要求，但就習知的蒸發源而 言，卻有難以獲得均勻膜厚分佈的問題。 此外’習知的蒸發源，除了要正確執行加熱溫度及蒸 發速度的控制是有困難以外，還有控制的反應性並不確實 的問題。 【專利文獻1】日本特開平10-168560號公報 【發明內容】 -5- (2) 1364463 〔發明欲解決之課題〕 本發明’是爲解決上述習知技術課題而爲的發明，其 目的在於提供一種可使大型基板獲得均勻膜厚分佈成膜的 有機材料用蒸發源及使用該有機材料用蒸發源的有機蒸鍍 裝置。 此外’本發明的其他目的’是提供一種能夠正確並且 反應性良好地執行蒸鍍時的加熱溫度及蒸發速度的控制之 #有機材料用蒸發源及使用該有機材料用蒸發源的有機蒸鍍 裝置。 〔用以解決課題之手段〕 爲達成上述目的，本發明的有機材料用蒸發源，具備 有：要收容指定有機材料用的容器本體部，該容器本體部 具有高頻感應線圏所形成的加熱部；及，蓋部，該蓋部具 有可使該有機材料的蒸氣通過的蒸發口，從上述蒸發口放 •出的有機材料的蒸氣量，是構成爲以指定基準位置爲基準 對於平面性位置是增加成末端擴散狀》 本發明’是於上述有機材料用蒸發源中，於上述蓋部 設有複數的蒸發口，該複數的蒸發口是被配置成末端擴散 狀。 本發明，是於上述有機材料用蒸發源中，將上述蓋部 的蒸發口構成爲離上述基準位置的距離愈遠其總開口面積 愈大。 本發明，是於上述有機材料用蒸發源中，將上述蓋部 -6- (3) 1364463 的蒸發口構成爲是沿著以上述基準位置爲中心的複數同心 圓弧形成排列。 本發明，是於上述有機材料用蒸發源中，將上述蓋部 形成爲末端擴散形狀。 本發明，是於上述有機材料用蒸發源中，將上述容器 本體部形成爲末端擴散形狀。 此外，本發明的有機蒸鍍裝置，具備有真空槽，於該 φ 真空槽配置有上述機材料用蒸發源，於上述真空槽中成膜 對象物是構成爲以指定旋轉中心軸爲中心對上述有機材料 用蒸發源形成相對性旋轉，上述有機材料用蒸發源，其蒸 ' 發口的基準位置是配置成位於上述旋轉中心軸的附近。 本發明的有機材料用蒸發源，從蒸發口放出的有機材 料的蒸氣量，是構成爲以指定基準位置爲基準對於平面性 位置是增加成末端擴散狀，由於是將該有機材料用蒸發源 其蒸發口的基準位置配置成位於成膜對象物的旋轉中心軸 馨的附近，所以於偏離成膜對象物的旋轉中心軸附近的部位 是能夠有較多的有機材料蒸氣蒸鍍，藉此使成膜對象物上 的膜厚分佈能夠均勻。 另外，由於本發明的有機材料用蒸發源，於容器本體 部具有高頻感應線圈所形成的加熱部，所以蒸發源例如與 使用克努森容器時相比是能夠正確並且反應良好地進行蒸 鍵時的加熱溫度及蒸發速度的控制。 於本發明的有機材料用蒸發源中，由於：蓋部設有複 數的蒸發口，該複數蒸發口是配置成末端擴散狀；蓋部的 (4) 1364463 蒸發口，是構成爲離上述基準位置的距離愈遠則總開口面 積愈大：及，蓋部的蒸發口是構成爲沿著以上述基準位置 爲中心的複數同心圓弧形成排列，所以，能夠使蒸發口所 要放出的有機材料的蒸氣量，是構成爲以指定基準位置爲 基準對於平面性位置是增加成末端擴散狀，藉此使成膜對 象物上的膜厚分佈能夠均勻。 φ 〔發明效果〕 根據本發明時，可使大型基板獲得均勻膜厚分佈成膜 的同時，還可正確並且反應性良好地執行蒸鍍時的加熱溫 ' 度及蒸發速度的控制》 【實施方式】 〔發明之最佳實施形態〕 以下，是參照圖面來對發明最佳實施形態進行詳細說 籲明。 第1圖，是表示本實施形態的有機蒸鍍裝置的構成剖 面圖，第2圖及第3圖，是表示該有機蒸鍍裝置的蒸發源構 成平面圖。第4圖，是表示該有機蒸鍍裝置的摻雜質蒸發 源的外觀構成透視圖。 如第1圖所示，本實施形態的有機蒸鍍裝置1，具有連 接於未圖示的真空排氣系統的真空槽2，於該真空槽2的下 方配設有下述蒸發部3。 於此，是於蒸發部3的上方附近，設有要控制從蒸發 -8- (5) 1364463 部3形成蒸發的蒸氣用的未圖示快門光閘（遮斷板）。 此外，於真空槽2內的上部，設有基板保持器4。於該 基板保持器4’固定著要形成蒸鍍膜的基板（成膜對象物 )5。接著，於基板5的下方附近，設有遮罩6。 於本實施形態的狀況，是由未圖示的馬達的驅動來構 成基板5於水平方向旋轉。 於該狀況，基板5，是以位於其中央部的旋轉中心軸〇 爲中心形成旋轉。 另一方面，蒸發部3。是由複數的蒸發源30所構成。 於本實施形態的狀況，各蒸發源30，具有：要蒸發基 質材料用的基質蒸發源31 ;及，要蒸發摻雜質材料用的摻 雜質蒸發源32，例如是於基質蒸發源31的兩側部配置有慘 雜質蒸發源3 2。 首先’是針對基質蒸發源31來進行說明，基質蒸發源 31’具有末牺擴散形狀（朝指定的一方向逐漸擴散的形狀 0 )的蒸發容器31a’例如是具有扇形形狀的蒸發容器31a。 於此，基質蒸發源31的蒸發容器31a，例如是由石墨 所形成’於其內部的共通空間，收容著指定的有機類蒸發 材料。 該蒸發容器31a，是由相同於蒸發容器31a扇形形狀的 的蓋部31b覆蓋著》 基質蒸發源3】’是構成爲，於蒸發容器3U的周圍捲 著指定的線圈50 ’從設置在真空槽2外部的交流電源51對 該線圈5 0施加有指定頻率數的交流電壓。 -9- (6) (6)1364463 另，於本實施形態中，例如是藉由在蒸發容器31a的 周圍配置有氣體等的冷媒循環用的冷卻管（未圖示）來使 蒸發容器3 1 a能夠控制在指定溫度。 於基質蒸發源3]的蓋部31b，設有下述要說明的複數 蒸發口 3 1 c。 於本實施形態的狀況，各蒸發口 31c是形成爲同—尺 寸的圓形形狀，對應於蓋部3 1 b的形狀配置成末端擴散狀 〇 如第3圖所示，各基質蒸發源31，其尖細狀的前端部 是配設成朝向上述基板5旋轉中心軸0的位置。 接著，蓋部31b的蒸發口 31c，是沿著以該基板5旋轉 中心軸〇爲中心的複數同心圓33形成排列。 於該狀況，蒸發口 31c是構成爲離基板5旋轉中心軸〇 的距離愈遠則蒸發口 31c的總開口面積愈大，因此蒸發口 3 1 c的數量是構成爲從旋轉中心軸〇朝外側逐漸變多。 根據上述的構成，從蒸發口 31c放出的有機材料的蒸 氣量，是以基板5旋轉中心軸0爲基準對平面性位置是增加 成末端擴張狀。 另，於本發明的狀況，蒸發口 31c的口徑是沒有特別 限定，但從確保膜厚均勻性的觀點來看，其直徑是以構成 爲]mm〜8mm爲佳。 此外’蒸發口 31c的間距，從確保膜厚均勻性的觀點 來看，是以形成爲3mm〜10mm爲佳。 再加上’從摻雜質和基質的共蒸鍍的濃度及膜厚是要 -10- (7) 1364463 成一定的觀點來看，蒸發容器31a及蓋部31b的扇形中心角 ，是以30°〜60°爲佳。 另一方面，摻雜質蒸發源32的基本構成，是與基質蒸 發源31相同，其是由蒸發容器32a和蓋部32b所構成。 接著，於摻雜質蒸發源32的蒸發容器32a的周圍捲著 指定的線圈50，構成爲從交流電源51對該線圈5 0施加有指 定頻率數的交流電壓。 ϋ 此外，於摻雜質蒸發源32的蓋部32b，設有複數的蒸 發口 32c。各蒸發口 32c是形成爲同一尺寸的圓形形狀，對 應於蓋部32b的形狀配置成末端擴散狀。 再加上，各摻雜質蒸發源32，其尖細狀的前端部是配 設成朝向上述基板5旋轉中心軸〇的位置。 接著，蓋部32b的蒸發口 32c，是沿著以該基板5旋轉 中心軸〇爲中心的複數同心圓3 3形成排列。 於該狀況，蒸發口 32c是構成爲離基板5旋轉中心軸Ο 肇的距離愈遠則蒸發口 32c的總開口面積愈大，因此蒸發口 3 2 c的數量是構成爲從旋轉中心軸〇朝外側逐漸變多。 根據上述的構成，摻雜質蒸發源32,是構成爲從蒸發 口 3 2c放出的有機材料的蒸氣量，是以基板5旋轉中心軸〇 爲基準對平面性位置是增加成末端擴張狀。 另’於本發明的狀況’蒸發口 32] c的口徑是沒有特別 限定，但從確保膜厚均勻性的觀點來看，其直徑是以構成 爲】mm〜2mm爲佳。 此外’蒸發口 32c的間距’從確保膜厚均勻性的觀點 -11 - (8) 1364463 來看，是以形成爲2mm〜5mm爲佳β 再加上’從摻雜質的濃度分佈觀點來看，蒸發容器 3 la及蓋部31b的扇形中心角，是以Γ〜30°爲佳。 如以上所述，於本實施形態中，基質蒸發源3丨及摻雜 質蒸發源32’是構成爲從蒸發口 31c、32c放出的有機材料 的蒸氣量’是以基板5旋轉中心軸Ο爲基準對平面性位置是 增加成末端擴張狀，其結果，於偏離基板5旋轉中心軸〇附 φ 近的部位是能夠有較多的有機材料蒸氣蒸鍍，藉此使基板 5上的膜厚分佈能夠均勻》 此外’於本實施形態中，因是由高頻感應線圈50來加 熱蒸鍍材料，所以蒸發源例如與使用克努森容器時相比是 能夠正確並且反應良好地進行蒸鍍時的加熱溫度及蒸發速 度的控制。 另，本發明並不限於上述實施形態，本發明是可進行 各種變更。 # 例如：上實施形態所示的蒸發源的數量、配置或蒸發 源的蒸發口的形狀、配置、尺寸等是其中一個例子，在不 脫離本發明的範圍是可進行適宜變更，例如蒸發口的形狀 也可形成爲窄縫狀等。 〔實施例〕 以使用上述蒸發源爲實施例，以使用克努森容器爲比 較例，在同一條件下進行蒸鍍，其結果如第5圖及第6圖所 示。 -12- (9) 1364463 如第5圖及第6圖所示，可明確得知第5圖所示的實施 例與第6圖所示的比較例相比是能夠正確並且反應良好地 進行蒸鍍時的加熱溫度及蒸發速度的控制，其結果，約以 1 /2的時間就能夠結束作業程序。 [產業上之可利用性〕 本發明的有機材料用蒸發源及有機蒸鍍裝置，在製造 φ有機EL元件等時，是可利用做爲要在基板上形成有機化合 物蒸鑛膜時的成膜手段。 ' 【圖式簡單說明】 第1圖爲表示本發明相關有機蒸鍍裝置實施形態構成 的剖面圖。 第2圖爲表示第1圖有機蒸鍍裝置的蒸發源構成平面圖 〇 φ 第3圖爲表示第1圖有機蒸鍍裝置的蒸發源構成平面圖 〇 第4圖爲表示有機蒸鍍裝置的摻雜質蒸發源的外觀構 成透視圖。 第5圖爲表示實施例的結果圖表。 第6圖爲表示比較例的結果圖表。 第7圖爲習之有機EL元件成膜用的有基蒸度裝置槪略 構成圖。 (10) (10)1364463 【主要元件符號說明】 1 :真空蒸鍍裝置 2 :真空糟 3 :蒸發部 4 :基板保持器 5 :基板（成膜對象物） 30 :蒸發源 3 1 :基質蒸發源 3 2 :摻雜質蒸發源 〇 :旋轉中心軸1364463 (1) The present invention relates to an evaporation source for an organic material for forming an organic compound vapor deposition film on a substrate, and an organic evaporation method, for example, when an organic EL device or the like is produced. Device. [Prior Art] Fig. 7 is a schematic view showing the structure of an organic vapor deposition device for forming a conventional organic EL device. As shown in Fig. 7, in the organic vapor deposition device 10, an evaporation source 103 is disposed in a lower portion of the vacuum chamber 1A, and a substrate 104 as a film formation object is disposed above the evaporation source 103. . Next, the vapor of the organic material formed by evaporation of the evaporation source 103: the cadmium mask 105 is deposited on the substrate 104 to form an organic film of a specified pattern. However, in recent years, the technical field of the organic EL element is In order to be able to meet the mass production technical requirements of large substrates, it is difficult to obtain a uniform film thickness distribution in terms of a conventional evaporation source. Further, in the conventional evaporation source, in addition to the difficulty in properly controlling the heating temperature and the evaporation rate, there is a problem that the control reactivity is not sure. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei No. 10-168560---- (2) 1364463 [Problems to be Solved by the Invention] The present invention is an invention for solving the above-mentioned problems of the prior art, and its object is to Provided is an evaporation source for an organic material which can form a film having a uniform film thickness distribution on a large substrate, and an organic vapor deposition device using the evaporation source for the organic material. Further, the "other object of the present invention" is to provide an organic material evaporation source and an organic vapor deposition device using the organic material evaporation source, which are capable of performing the control of the heating temperature and the evaporation rate at the time of vapor deposition. . [Means for Solving the Problem] In order to achieve the above object, the evaporation source for an organic material of the present invention includes a container body portion for accommodating a predetermined organic material, and the container body portion has a heating by a high-frequency induction coil. And a cover portion having an evaporation port through which the vapor of the organic material passes, and the amount of the vapor of the organic material discharged from the evaporation port is configured to be a planar position based on the predetermined reference position In the above-described cover portion, a plurality of evaporation ports are provided in the evaporation source for the organic material, and the plurality of evaporation ports are arranged in a terminal diffusion shape. According to still another aspect of the invention, in the evaporation source for an organic material, the evaporation opening of the lid portion is configured such that the greater the distance from the reference position, the larger the total opening area. In the above-described evaporation source for an organic material, the evaporation port of the lid portion -6-(3) 1364463 is formed so as to be arranged along a plurality of concentric arcs centering on the reference position. In the above invention, in the evaporation source for an organic material, the lid portion is formed into a terminal diffusion shape. According to still another aspect of the invention, in the evaporation source for an organic material, the container body portion is formed into a terminal diffusion shape. Further, the organic vapor deposition device of the present invention includes a vacuum chamber in which the evaporation source for the machine material is disposed, and the object to be formed in the vacuum chamber is configured to be centered on a predetermined rotation center axis. The organic material is relatively rotated by an evaporation source, and the organic material is used as an evaporation source, and the reference position of the vaporizing port is disposed in the vicinity of the central axis of rotation. In the evaporation source for an organic material of the present invention, the amount of vapor of the organic material discharged from the evaporation port is such that the planar position is increased to a terminal diffusion state based on the predetermined reference position, and the organic material is used as an evaporation source. Since the reference position of the evaporation port is disposed in the vicinity of the center axis of rotation of the film formation object, a portion of the vicinity of the rotation center axis of the film formation object can be vapor-deposited with a large amount of organic material. The film thickness distribution on the film object can be uniform. Further, since the evaporation source for the organic material of the present invention has the heating portion formed by the high-frequency induction coil in the container main portion, the evaporation source can be accurately and reactably steamed, for example, when using the Knudsen container. Control of heating temperature and evaporation rate. In the evaporation source for organic materials of the present invention, since the cover portion is provided with a plurality of evaporation ports, the plurality of evaporation ports are arranged to be terminally diffused; and the (4) 1364463 evaporation ports of the cover portion are configured to be apart from the above reference position. The farther the distance is, the larger the total opening area is: and the evaporation port of the lid portion is formed so as to be arranged along a plurality of concentric arcs centering on the above-mentioned reference position, so that the vapor of the organic material to be discharged from the evaporation port can be made. The amount is configured such that the planar position is increased to a terminal diffusion shape based on the predetermined reference position, whereby the film thickness distribution on the film formation object can be made uniform. φ [Effect of the Invention] According to the present invention, it is possible to obtain a uniform film thickness distribution and formation of a large-sized substrate, and to control the heating temperature and the evaporation rate during vapor deposition accurately and with good reactivity. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the best mode for carrying out the invention will be described in detail with reference to the drawings. Fig. 1 is a cross-sectional view showing the structure of an organic vapor deposition device of the embodiment, and Fig. 2 and Fig. 3 are plan views showing the evaporation source of the organic vapor deposition device. Fig. 4 is a perspective view showing the appearance of a doping evaporation source of the organic vapor deposition device. As shown in Fig. 1, the organic vapor deposition device 1 of the present embodiment has a vacuum chamber 2 connected to a vacuum evacuation system (not shown), and an evaporation unit 3 described below is disposed below the vacuum chamber 2. Here, in the vicinity of the upper portion of the evaporation portion 3, an unillustrated shutter shutter (blocking plate) for controlling the evaporation of vapor from the evaporation - 8 - (5) 1364463 portion 3 is provided. Further, a substrate holder 4 is provided on the upper portion of the vacuum chamber 2. A substrate (film formation object) 5 on which a vapor deposition film is to be formed is fixed to the substrate holder 4'. Next, a mask 6 is provided in the vicinity of the lower side of the substrate 5. In the case of the present embodiment, the substrate 5 is rotated in the horizontal direction by driving of a motor (not shown). In this case, the substrate 5 is rotated about the rotation center axis 位于 at the center portion thereof. On the other hand, the evaporation unit 3. It is composed of a plurality of evaporation sources 30. In the case of the present embodiment, each evaporation source 30 has a matrix evaporation source 31 for evaporating the matrix material; and a dopant evaporation source 32 for evaporating the dopant material, for example, the substrate evaporation source 31. The two sides are provided with a source of impurity evaporation 3 2 . First, the description will be made with respect to the matrix evaporation source 31, and the evaporation container 31a' having the terminal diffusion shape (shape 0 gradually diffusing in a predetermined direction) is, for example, an evaporation container 31a having a sector shape. Here, the evaporation container 31a of the matrix evaporation source 31 is, for example, a common space formed by graphite inside, and houses a predetermined organic evaporation material. The evaporation container 31a is covered by a lid portion 31b which is identical to the fan-shaped shape of the evaporation container 31a. The substrate evaporation source 3' is configured such that a predetermined coil 50' is wound around the evaporation container 3U from the vacuum chamber. 2 The external AC power supply 51 applies an AC voltage of a predetermined frequency to the coil 50. -9- (6) (6) 1364643. In the present embodiment, for example, a cooling pipe (not shown) for circulating a refrigerant such as a gas is disposed around the evaporation container 31a to evaporate the container 3 1 . a can control at the specified temperature. The cover portion 31b of the substrate evaporation source 3] is provided with a plurality of evaporation ports 3 1 c to be described below. In the case of the present embodiment, each of the evaporation ports 31c is formed in a circular shape of the same size, and is arranged in a terminal diffusion shape in accordance with the shape of the lid portion 3 1 b. As shown in Fig. 3, each of the matrix evaporation sources 31, The tip end portion of the tapered shape is disposed at a position that is rotated toward the central axis 0 of the substrate 5. Next, the evaporation port 31c of the lid portion 31b is arranged along a plurality of concentric circles 33 centered on the central axis of rotation of the substrate 5. In this case, the evaporation port 31c is configured such that the further the distance from the central axis of the rotation of the substrate 5 is, the larger the total opening area of the evaporation port 31c is. Therefore, the number of the evaporation ports 3 1 c is configured to be outward from the central axis of rotation. Gradually more. According to the above configuration, the amount of vapor of the organic material discharged from the evaporation port 31c is increased to a terminally expanded shape with respect to the planar position based on the central axis 0 of the rotation of the substrate 5. Further, in the case of the present invention, the diameter of the evaporation port 31c is not particularly limited, but from the viewpoint of ensuring uniformity of film thickness, the diameter is preferably from mm to 8 mm. Further, the pitch of the evaporation port 31c is preferably from 3 mm to 10 mm from the viewpoint of ensuring uniformity of film thickness. In addition, 'the concentration and film thickness of the co-evaporation from the doping and the matrix are -10- (7) 1364463. From a certain point of view, the fan-shaped central angle of the evaporation container 31a and the lid portion 31b is 30 ° ~ 60 ° is better. On the other hand, the basic configuration of the dopant evaporation source 32 is the same as that of the substrate evaporation source 31, and is constituted by the evaporation container 32a and the lid portion 32b. Next, a predetermined coil 50 is wound around the evaporation container 32a of the dopant evaporation source 32, and an AC voltage of a predetermined frequency is applied to the coil 50 from the AC power source 51. Further, a plurality of evaporation ports 32c are provided in the lid portion 32b of the dopant evaporation source 32. Each of the evaporation ports 32c has a circular shape of the same size, and is arranged in a terminal diffusion shape in accordance with the shape of the lid portion 32b. Further, each of the doped evaporation sources 32 has a tapered front end portion that is disposed so as to be oriented toward the central axis of rotation of the substrate 5. Next, the evaporation port 32c of the lid portion 32b is arranged along a plurality of concentric circles 3 3 centered on the central axis of rotation of the substrate 5. In this case, the evaporation port 32c is configured such that the further the distance from the central axis of rotation of the substrate 5 is larger, the larger the total opening area of the evaporation port 32c is. Therefore, the number of the evaporation ports 3 2 c is configured to be from the central axis of rotation. The outer side gradually becomes more and more. According to the above configuration, the dopant evaporation source 32 is configured such that the amount of vapor of the organic material discharged from the evaporation port 3 2c is increased to a terminally expanded shape with respect to the planar position based on the central axis of rotation of the substrate 5. Further, the diameter of the evaporation port 32] c is not particularly limited, but the diameter is preferably from mm to 2 mm from the viewpoint of ensuring uniformity of film thickness. Further, 'the pitch of the evaporation port 32c' is from the viewpoint of ensuring the uniformity of the film thickness -11 - (8) 1364463, and it is preferable to form it as 2 mm to 5 mm, plus 'from the viewpoint of the concentration distribution of the doping substance. The fan-shaped central angle of the evaporation container 3 la and the lid portion 31b is preferably Γ30°. As described above, in the present embodiment, the matrix evaporation source 3丨 and the dopant evaporation source 32' are configured such that the amount of vapor of the organic material discharged from the evaporation ports 31c and 32c is the central axis of rotation of the substrate 5. The reference is increased in the planar position to the end-expanded shape. As a result, the portion near the central axis of the rotation of the substrate 5 is substantially vapor-deposited, thereby allowing the film thickness distribution on the substrate 5. Further, in the present embodiment, since the vapor deposition material is heated by the high-frequency induction coil 50, the evaporation source can be accurately and reacted with vaporization, for example, when using a Knudsen container. Control of heating temperature and evaporation rate. Further, the present invention is not limited to the above embodiment, and various modifications can be made to the invention. #例: The number, arrangement, shape, arrangement, size, and the like of the evaporation source shown in the above embodiment are examples, and can be appropriately changed without departing from the scope of the invention, such as an evaporation port. The shape may also be formed into a slit shape or the like. [Examples] The evaporation source was used as an example, and a Knudsen container was used as a comparative example, and vapor deposition was carried out under the same conditions. The results are shown in Fig. 5 and Fig. 6. -12- (9) 1364463 As shown in Fig. 5 and Fig. 6, it is clear that the embodiment shown in Fig. 5 is capable of being steamed correctly and in a well-reacted manner as compared with the comparative example shown in Fig. 6. The heating temperature and the evaporation rate during plating are controlled, and as a result, the operation program can be completed in about 1 /2. [Industrial Applicability] The evaporation source of the organic material and the organic vapor deposition device of the present invention can be used as a film for forming an organic compound vapor-deposited film on a substrate when producing a φ organic EL device or the like. means. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing the configuration of an embodiment of an organic vapor deposition device according to the present invention. Fig. 2 is a plan view showing the evaporation source of the organic vapor deposition device of Fig. 1. Fig. 3 is a plan view showing the evaporation source of the organic vapor deposition device of Fig. 1. Fig. 4 is a view showing the doping of the organic vapor deposition device. The appearance of the evaporation source constitutes a perspective view. Fig. 5 is a graph showing the results of the examples. Fig. 6 is a graph showing the results of a comparative example. Fig. 7 is a schematic view showing the configuration of a base steaming device for film formation of a conventional organic EL device. (10) (10) 1364643 [Explanation of main component symbols] 1 : Vacuum vapor deposition apparatus 2 : Vacuum cleaner 3 : Evaporation section 4 : Substrate holder 5 : Substrate (film formation object) 30 : Evaporation source 3 1 : Substrate evaporation Source 3 2 : Doping evaporation source 〇: rotation central axis
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