JP7217635B2 - Evaporation source, deposition apparatus, and deposition method - Google Patents

Description

The present invention relates to a vapor deposition source, a film forming apparatus, and a vapor deposition method.

In recent years, devices using thin films of organic compounds have been provided, as typified by organic LEDs. Organic compounds are more susceptible to heat than metals and have a higher vapor pressure than metals. Therefore, in forming thin films, vacuum deposition is often used instead of sputtering, CVD, and the like.

For example, in a vapor deposition apparatus, a vapor deposition source is arranged in the lower part of a vacuum container, and a substrate supported by a substrate holder is arranged in the upper part of the vapor deposition source. Then, while rotating the substrate, the organic material evaporated by the deposition source is deposited on the substrate to form an organic thin film on the substrate. However, in such a vapor deposition apparatus, there is a problem that the thickness of the organic thin film formed on the substrate is not uniform due to the influence of shielding by the edges of the substrate holder, the mask, and the like.

Under such circumstances, there is a technique in which a linear source type deposition source is opposed to a substrate, and the deposition source is moved in parallel with the substrate while the substrate is rotated to form an organic thin film on the substrate. (See, for example, Patent Document 1). According to such a method, a uniform organic thin film is formed on the substrate by the action of parallel movement of the deposition source in addition to the action of rotation of the substrate.

JP 2004-176126 A

However, if the deposition source is moved in parallel with respect to the substrate, extra takt time is required for moving the deposition source from end to end of the substrate. Further, when the evaporation source and the substrate are offset by parallel movement, most of the evaporation material evaporated from the evaporation source deviates from the substrate and does not adhere to the substrate. As a result, the deposition efficiency of the vapor deposition material to the substrate is lowered. Thus, in the vapor deposition apparatus, there is a limit to the efficiency of using the vapor deposition material.

In view of the circumstances as described above, an object of the present invention is to provide a vapor deposition source, a film forming apparatus, and a vapor deposition method that improve the efficiency of using vapor deposition materials.

To achieve the above object, an evaporation source according to one aspect of the present invention is an evaporation source that faces a substrate holder that supports a substrate and rotates around the center of the substrate. The deposition source includes a storage container and a plurality of evaporation vessels housed in the storage container. Each of the plurality of evaporation containers is provided with a plurality of ejection nozzles for ejecting vapor deposition materials. In each of the plurality of evaporation vessels, the maximum length of the arrangement area where the plurality of ejection nozzles are arranged is shorter than the diameter of the substrate.

According to such a vapor deposition source, in the vapor deposition source facing the rotating substrate holder, each of the plurality of evaporation containers is provided with a plurality of ejection nozzles for ejecting the vapor deposition material, and each of the plurality of evaporation containers includes a plurality of Since the maximum length of the arrangement area where the ejection nozzles are arranged is configured to be shorter than the diameter of the substrate, the use efficiency of the vapor deposition material is greatly improved.

In the vapor deposition source, the relative position of the center of the container with respect to the center of the substrate holder may be fixed while the vapor deposition material is jetted from the plurality of jet nozzles.

According to such a vapor deposition source, the relative position of the center of the container with respect to the center of the substrate holder is fixed when the vapor deposition material is jetted from the plurality of jetting nozzles, so the use efficiency of the vapor deposition material is improved. improve greatly.

In the vapor deposition source, a plurality of the arrangement regions may be arranged around the center of the container.

According to such a vapor deposition source, since a plurality of arrangement regions are arranged around the center of the container, the use efficiency of the vapor deposition material is greatly improved.

In the vapor deposition source, the storage container has a plurality of first spaces radially divided from the center of the storage container toward the outer peripheral edge of the storage container. Any one of the plurality of evaporation vessels may be arranged.

According to such a vapor deposition source, the container has a plurality of first spaces that are radially divided from the center of the container toward the outer peripheral edge of the container, and the plurality of first spaces are arranged in any one of the plurality of first spaces. , the use efficiency of the vapor deposition material is greatly improved.

In the vapor deposition source, the plurality of ejection nozzles may be arranged in parallel from the center of the container toward the outer peripheral edge of the container.

According to such a vapor deposition source, since a plurality of ejection nozzles are arranged side by side from the center of the container toward the outer peripheral end of the container, the use efficiency of the vapor deposition material is greatly improved.

In the vapor deposition source, when two evaporation containers are selected from the plurality of evaporation containers and one of the evaporation containers revolves around the center to the position of the other evaporation container, The plurality of jet nozzles may overlap with the plurality of jet nozzles provided in the other evaporation container.

According to such a vapor deposition source, when one of the two evaporation containers revolves around the center to the position of the other evaporation container, the plurality of ejection nozzles provided in one of the evaporation containers overlaps with a plurality of ejection nozzles provided in the other evaporation container, the use efficiency of the vapor deposition material is greatly improved.

In the vapor deposition source, a plurality of the arrangement regions may be arranged across a straight line including the center of the container.

According to such a vapor deposition source, since a plurality of arrangement regions are arranged across a straight line including the center of the container, the use efficiency of the vapor deposition material is greatly improved.

In the vapor deposition source, the storage container has a plurality of second spaces partitioned into a grid symmetrically about a straight line including the center of the storage container, and the plurality of second spaces are arranged in any one of the plurality of evaporation containers. Either of the two spaces may be arranged.

According to such a vapor deposition source, the storage container has a plurality of second spaces partitioned in a grid pattern symmetrically about a straight line including the center of the storage container, and the plurality of second spaces are arranged in any one of the plurality of evaporation containers. Since any one of the spaces is arranged, the use efficiency of the vapor deposition material is greatly improved.

In the vapor deposition source, the plurality of ejection nozzles may be arranged side by side in the longitudinal direction of the evaporation container.

According to such a vapor deposition source, since a plurality of ejection nozzles are arranged side by side in the longitudinal direction of the vaporization container, the use efficiency of the vapor deposition material is greatly improved.

In the vapor deposition source, when two evaporation containers facing each other across the center are selected from the plurality of evaporation containers, and one of the evaporation containers revolves around the center to the position of the other evaporation container, the above The plurality of ejection nozzles provided in one evaporation container may overlap the plurality of ejection nozzles provided in the other evaporation container.

According to such a vapor deposition source, when one of the two evaporation containers revolves around the center to the position of the other evaporation container, the plurality of ejection nozzles provided in one of the evaporation containers overlaps with a plurality of ejection nozzles provided in the other evaporation container, the use efficiency of the vapor deposition material is greatly improved.

In the vapor deposition source, when two evaporation containers facing each other across the straight line are selected from the plurality of evaporation containers, the plurality of ejection nozzles provided in one evaporation container are provided in the other evaporation container. It may be arranged line-symmetrically with the plurality of ejection nozzles.

According to such a vapor deposition source, when two evaporation containers facing each other across a straight line are selected from a plurality of evaporation containers, a plurality of ejection nozzles provided in one evaporation container are provided in the other evaporation container. Since it is arranged line-symmetrically with a plurality of ejection nozzles, the use efficiency of the vapor deposition material is greatly improved.

In the vapor deposition source, when two ejection nozzles are selected from the plurality of ejection nozzles, the ejection nozzle arranged closer to the center of the container may be configured to have a smaller diameter.

According to such a vapor deposition source, when two of the above-mentioned ejection nozzles are selected from a plurality of ejection nozzles, the ejection nozzle arranged closer to the center of the container has a smaller diameter. A film with an appropriate thickness is formed, and the use efficiency of the vapor deposition material is greatly improved.

In the vapor deposition source, at least two of the ejection nozzles may be arranged in parallel in a direction in which the substrate holder rotates in any one of the plurality of evaporation containers.

According to such a vapor deposition source, since at least two ejection nozzles are arranged side by side in the direction in which the substrate holder rotates in any one of the plurality of evaporation containers, a film having a uniform thickness is formed on the substrate, Efficiency in using vapor deposition materials is greatly improved.

In the vapor deposition source, any one of the plurality of ejection nozzles may be arranged tilting toward the central axis.

According to such a vapor deposition source, one of the plurality of ejection nozzles is arranged to be inclined toward the central axis, so that the efficiency of using the vapor deposition material is greatly improved.

In the vapor deposition source, the plurality of evaporation containers may be configured to be detachable from the storage container.

According to such a vapor deposition source, work efficiency is greatly improved.

In the vapor deposition source, the storage container and the plurality of evaporation containers may be heated by an induction heating method.

According to such a vapor deposition source, since the storage container and the plurality of vaporization containers are heated by the induction heating method, the responsiveness of heat conduction to the vapor deposition material is improved, and the use efficiency of the vapor deposition material is greatly improved. .

To achieve the above object, a film forming apparatus according to one aspect of the present invention includes a substrate holder, the vapor deposition source, and a vacuum vessel. The substrate holder supports the substrate and rotates around the center of the substrate. The vacuum vessel accommodates the substrate holder and the deposition source.

According to such a deposition source, in the deposition source, each of the plurality of evaporation containers is provided with a plurality of ejection nozzles for ejecting the deposition material, and each of the plurality of evaporation containers is provided with a plurality of ejection nozzles. Since the maximum length of the arrangement area is shorter than the diameter of the substrate, the use efficiency of the vapor deposition material is greatly improved.

In order to achieve the above object, in a vapor deposition method according to one aspect of the present invention, a substrate is supported by a substrate holder, and the substrate holder is rotated around the center of the substrate. An evaporation source is opposed to the substrate holder. Then, the vapor deposition material is evaporated from the vapor deposition source to form a film on the substrate.

According to such a vapor deposition method, in the vapor deposition source, each of the plurality of evaporation vessels is provided with a plurality of ejection nozzles for ejecting the vapor deposition material, and each of the plurality of evaporation vessels is provided with a plurality of ejection nozzles. Since the maximum length of the arrangement area is shorter than the diameter of the substrate, the use efficiency of the vapor deposition material is greatly improved.

INDUSTRIAL APPLICABILITY As described above, according to the present invention, a vapor deposition source, a film forming apparatus, and a vapor deposition method are provided in which the use efficiency of the vapor deposition material is improved.

1 is a schematic cross-sectional view of a film forming apparatus according to this embodiment; FIG. FIG. (a) is a schematic top view of the vapor deposition source according to this embodiment. FIG. (b) is a schematic cross-sectional view of the vapor deposition source according to this embodiment. FIG. 4 is a schematic cross-sectional view illustrating how the evaporation container is removed from the storage container; It is a schematic top view of the modification of the vapor deposition source which concerns on this embodiment. It is a typical sectional view of another modification of the vapor deposition source concerning this embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. XYZ axis coordinates may be introduced in each drawing. Also, the same reference numerals may be given to the same members or members having the same function, and the description may be omitted as appropriate after the description of the members. Also, the embodiment is an example, and is not limited to the examples shown below.

(Deposition device)

FIG. 1 is a schematic cross-sectional view of a film forming apparatus according to this embodiment.

The film forming apparatus 1 includes a vacuum vessel 10, a substrate holder 20, a rotating mechanism 25, a vapor deposition source 30A, a shutter 60, and an exhaust mechanism . The film forming device 1 is a vapor deposition device that forms a vapor deposition material on a substrate 90 .

The vacuum vessel 10 is a vessel capable of maintaining a reduced pressure state. For example, the vacuum vessel 10 has its internal gas exhausted by the exhaust mechanism 70 . The planar shape of the vacuum vessel 10 when viewed from above in the direction from the vapor deposition source 30A toward the substrate holder 20 (hereinafter referred to as the Z-axis direction) is, for example, a rectangular shape. The planar shape is not limited to a rectangular shape, and may be circular, for example.

The vacuum container 10 accommodates the substrate holder 20, part of the rotation mechanism 25, the deposition source 30A, the shutter 60, and the like. The vacuum vessel 10 may be provided with a gas supply mechanism capable of supplying gas. Further, the vacuum vessel 10 may be provided with a pressure gauge for measuring the internal pressure. Further, the vacuum vessel 10 may be provided with a film thickness gauge for indirectly measuring the deposition rate of the film formed on the substrate 90 . Moreover, the film forming apparatus 1 may be provided with a temperature sensor that measures the temperature of the vapor deposition material 30 m heated by the heating mechanism 33 .

The substrate holder 20 is positioned above the vacuum vessel 10 . The substrate holder 20 faces the deposition source 30A in the Z-axis direction. Substrate holder 20 supports substrate 90 . The planar shape of the substrate holder 20 on the XY axis plane is designed to match the planar shape of the substrate 90 . The planar shape of the substrate holder 20 is, for example, circular. The substrate 90 supported by the substrate holder 20 is, for example, a circular semiconductor wafer. The substrate 90 may be, for example, a rectangular glass substrate. In this embodiment, the diameter of the substrate 90 is represented as Rs. Rs is, for example, 300 mm.

A center portion of the substrate holder 20 is connected to a rotation mechanism 25 . The rotation mechanism 25 has a shaft portion 251 and a drive unit 252 . The shaft portion 251 is provided inside the vacuum vessel 10 and extends in the Z-axis direction. The shaft portion 251 is connected to a drive unit 252 provided outside the vacuum vessel 10 . By controlling the rotation of the shaft portion 251 by the drive unit 252, the substrate holder 20 rotates about the center of the substrate 90 as the central axis 20c. Note that the central axis 20 c of the substrate holder 20 is also the central axis of the shaft portion 251 .

The vapor deposition source 30A is positioned below the vacuum vessel 10 . The deposition source 30A faces the substrate holder 20 in the Z-axis direction. 30 A of vapor deposition sources are being fixed to the support stand which is not illustrated, for example. The deposition source 30A includes a storage container 31A, a plurality of evaporation containers 32A (crucibles), and a heating mechanism 33. The accommodation container 31A accommodates a plurality of evaporation containers 32A and a heating mechanism 33 .

Further, a plurality of ejection nozzles 320 for ejecting the vapor deposition material 30m filled in the evaporation containers 32A are provided on the top surface of each of the evaporation containers 32A. The ejection nozzle 320 faces the substrate holder 20 when the evaporation container 32A is accommodated in the accommodation container 31A. In each of the plurality of evaporation vessels 32A, the maximum length L (L is a variable) of the arrangement area 320a in which the plurality of ejection nozzles 320 are arranged is shorter than the diameter Rs of the substrate 90. As shown in FIG. Here, the diameter of the substrate 90 is defined by the diameter of the circle when the planar shape of the substrate 90 is circular, and is defined by the distance between the opposing corners when the planar shape of the substrate 90 is rectangular. be. Note that the ejection nozzle 320 is not arranged directly below the central axis 20 c of the substrate holder 20 .

In the film forming apparatus 1, when the deposition material 30m is ejected from the plurality of ejection nozzles 320 and the deposition material 30m is being deposited on the substrate 90, the center 31c of the container 31A with respect to the center of the substrate holder 20 Relative position is fixed. That is, the relative distance between the substrate 90 and the vapor deposition source 30A in the X-axis direction or the Y-axis direction remains unchanged during film formation.

The heating mechanism 33 is arranged outside the evaporation container 32A. A heating mechanism 33 surrounds the bottom and sides of the evaporation vessel 32A. The heating mechanism 33 is an induction heating or resistance heating mechanism. The vapor deposition material 30m stored in the evaporation container 32A is heated by the heating mechanism 33 and evaporated toward the substrate 90 from the plurality of ejection nozzles 320. As shown in FIG. The vapor deposition material 30m is, for example, an organic substance.

Further, a shutter 60 is provided directly above the evaporation container 32A to block the vapor deposition material 30m flying toward the substrate holder 20. As shown in FIG.

(Vapor deposition source)

FIG. 2A is a schematic top view of the vapor deposition source according to this embodiment. FIG. 2B is a schematic cross-sectional view of the vapor deposition source according to this embodiment. The top plate portion 313 is not shown in FIG. 2(a). FIG. 2(b) shows a cross section along line AA' of FIG. 2(a). In addition, FIG. 2(a) shows the outer circumference of the substrate 90 located above the vapor deposition source 30A.

The container 31A has a main body portion 310A, a partition portion 311, a reflector portion 312, and a top plate portion 313. As shown in FIG. The container 31A is made of a conductive material such as a high-melting-point metal, SUS steel, carbon, or the like. The outer shape of the container 31A on the XY plane is, for example, circular.

The main body 310A is a cylindrical container with a closed bottom and an open top. The body portion 310A accommodates the partition portion 311 and the reflector portion 312 . The partition part 311 branches into three forks from the center 31c and is connected to the inner wall of the main body part 310A. For example, the angle formed by partitions 311 adjacent in the circumferential direction is 120°. Here, the circumferential direction is the direction in which the substrate holder rotates around the central axis 20c. In addition, a channel through which a coolant flows may be provided inside each of the main body portion 310A, the partition portion 311, and the top plate portion 313. As shown in FIG.

The reflector portion 312 is provided between the partition portions 311 adjacent in the circumferential direction of the container 31A. For example, in the example of FIG. 2A, two reflector portions 312 are arranged between partition portions 311 adjacent in the circumferential direction.

As a result, the inside of the container 31A is divided radially from the center 31c of the container 31A toward the outer peripheral edge 31e of the container 31A by the partition portion 311 and the plurality of reflector portions 312 .

For example, the partition 311 divides the inside of the container 31A into three sections. Further, the interior of the storage container 31A divided by the partition portion 311 is further divided into three by the reflector portion 312 . The reflector portion 312 extends from the center 31c toward the outer peripheral edge 31e. That is, the container 31A has a plurality of spaces 314 (first spaces) due to this radial division. For example, nine spaces 314 are shown in FIG. 2(a). The volume of each of the plurality of spaces 314 is substantially the same. The planar shape of the space 314 is, for example, fan-shaped.

Also, one of the plurality of evaporation containers 32A is arranged in one of the plurality of spaces 314. As shown in FIG. The evaporation container 32A may be placed in at least one of the multiple spaces 314 , may be placed in all of the multiple spaces 314 , or may be placed in one of the spaces 314 . Note that the evaporation container 32A is mounted on, for example, a pedestal 315 provided in the lower part of the space 314. As shown in FIG. The material of the pedestal 315 may be either a conductive material or an insulating material.

A plurality of ejection nozzles 320 are arranged side by side from the center 31c of the container 31A toward the outer peripheral edge 31e of the container 31A. Therefore, in the evaporation container 32A, the maximum length L of the arrangement area 320a in which the plurality of ejection nozzles 320 are arranged is the length of the arrangement area 320a in the direction from the center 31c toward the outer peripheral edge 31e. Further, in the storage container 31A, the maximum length L is configured to be shorter than the diameter Rs of the substrate 90. As shown in FIG.

A plurality of arrangement areas 320a are arranged around the center 31c of the container 31A. At least part of each of the plurality of arrangement regions 320a overlaps the substrate 90 when the deposition source 30A is viewed from above in the Z-axis direction. In other words, at least a portion of the plurality of ejection nozzles 320 overlap the substrate 90 when the vapor deposition source 30A is viewed from above in the Z-axis direction.

Further, in the deposition source 30A, when any two evaporation containers 32A are selected from the plurality of evaporation containers 32A and one of the evaporation containers 32A revolves around the center 31c to the position of the other evaporation container 32A, one A plurality of ejection nozzles 320 provided in one evaporation container 32A overlap with a plurality of ejection nozzles 320 provided in the other evaporation container 32A.

For example, the shape of each of the plurality of evaporation vessels 32A is configured line-symmetrically with respect to its own centerline 32c and is substantially the same. The planar shape of each of the plurality of evaporation containers 32A is, for example, fan-shaped. In the evaporation container 32A, the plurality of ejection nozzles 320 are arranged line-symmetrically with respect to the center line 32c. Therefore, when the evaporation containers 32A having the same configuration are arranged in all the spaces 314, the arrangement pattern of the nozzles composed of all the ejection nozzles 320 in the deposition source 30A constitutes rotational symmetry (360°/3 symmetry). do.

Further, when two ejection nozzles 320 are selected from a plurality of ejection nozzles 320 in the vapor deposition source 30A, the ejection nozzle 320 arranged closer to the center 31c of the container 31A may be configured to have a smaller nozzle diameter. For example, the diameter of the plurality of ejection nozzles 320 may be configured to be larger from the center 31c toward the outer peripheral edge 31e, or may be configured to be larger for each group of the plurality of ejection nozzles 320 .

At least two ejection nozzles 320 may be arranged in parallel in the circumferential direction in any one of the plurality of evaporation containers 32A. Also, the plurality of ejection nozzles 320 may be arranged in a line from the center 31c toward the outer peripheral edge 31e. For example, in the example of FIG. 2A, two or three ejection nozzles 320 are arranged in parallel in the circumferential direction near the outer peripheral end 31e.

The reflector part 312 is arranged between the evaporation containers 32A adjacent in the circumferential direction. The reflector part 312 is a heat reflecting plate and reflects the heat emitted from the evaporation container 32A to the evaporation container 32A. As a result, the evaporation container 32A is efficiently heated by the heating mechanism 33 .

Also, the top plate portion 313 covers the main body portion 310A, the partition portion 311 and the reflector portion 312 . The top plate portion 313 is provided with a through hole 313h through which the ejection nozzle 320 penetrates. As a result, the ejection nozzle 320 penetrates the top plate portion 313 and protrudes from the storage container 31A toward the substrate 90 .

3(a) and 3(b) are schematic cross-sectional views illustrating how the evaporation container is removed from the storage container.

Each of the plurality of evaporation containers 32A is configured to be detachable from the storage container 31A. Further, as an example, in the evaporation container 32A, the upper surface portion 321 (cover portion) provided with the ejection nozzle 320 can be removed from the main body portion 322 . By removing the upper surface portion 321 from the main body portion 322, the vapor deposition material 30m can be charged into the evaporation container 32A. In addition, by making the body portion 322 have a common structure in the plurality of evaporation containers 32A, various upper face portions 321 having different arrangement patterns and hole diameters of the plurality of ejection nozzles 320 can be attached to the body portion 322.

For example, as shown in FIG. 3A, the top plate portion 313 is removed from the container 31A. Thereafter, as shown in FIG. 3(b), the evaporation container 32A is removed from the storage container 31A. Also, by performing this reverse operation, the evaporation container 32A can be attached to the storage container 31A.

Using such a vapor deposition source 30A, the substrate holder 20 supports the substrate 90, and the substrate holder 20 is rotated with the center of the substrate 90 as the central axis. At this time, the deposition source 30A faces the substrate holder 20 . Next, a film is formed on the substrate 90 by evaporating the vapor deposition material 30m from the vapor deposition source 30A. Here, one of the evaporation containers 32A is selected from the plurality of evaporation containers 32A by the shutter 60, and the vapor deposition material 30m filled in the selected evaporation container 32A is evaporated to form a film on the substrate 90. .

Thus, in the vapor deposition source 30A, the maximum length L of the arrangement area 320a of the plurality of ejection nozzles 320 provided in each evaporation container 32A is smaller than the diameter Rs of the substrate 90, They are arranged side by side in a direction perpendicular to the direction of rotation. Here, the maximum length L is the maximum width of the arrangement area 320a in the direction orthogonal to the Z-axis direction. Therefore, a film having a uniform thickness is formed on the substrate 90 by using the vapor deposition source 30A.

Here, by appropriately designing the diameter and pitch of each of the plurality of ejection nozzles 320 and the number of the ejection nozzles 320 arranged side by side in the circumferential direction in accordance with the characteristics of the deposition material 30m, the deposition rate, etc., the substrate 90 A film with a uniform thickness is reliably formed.

For example, even if the number of rotations (angular velocity) of the substrate 90 is constant, the passing speed of the substrate 90 passing above the ejection nozzle 320 increases as the distance from the center of the substrate 90 increases. In the vapor deposition source 30A, the diameter of the ejection nozzle 320 that is further away from the center 31c of the container 31A is configured to be larger than the diameter of the ejection nozzle 320 that is closer to the center 31c. Ejection nozzles 320 are arranged side by side. Therefore, even if the substrate 90 rotates, the deposited amount of the vapor deposition material 30m deposited on the entire substrate is balanced, and a film having a uniform thickness is formed on the substrate 90 .

Further, the ejection nozzle 320 is not provided directly below the central axis 20c of the substrate holder 20. As shown in FIG. Therefore, the concentrated arrangement of the ejection nozzles 320 in the central portion of the vapor deposition source 30A is suppressed, and the film thickness increase in the central portion of the substrate 90 is suppressed.

For example, when an organic deposition film was formed on a Si wafer having a diameter of 300 mm as the substrate 90, the film thickness distribution was ±((maximum film thickness - minimum film thickness)/(maximum film thickness + minimum film thickness)) x 100%. ±1% is obtained as the film thickness distribution defined by the formula.

Also, if the deposition source 30A is used, the film is formed on the substrate 90 while rotating the substrate 90 without moving the deposition source 30A relative to the substrate 90 in parallel. For this reason, the tact efficiency in the vapor deposition process is improved, and the material usage efficiency of the vapor deposition material 30m is greatly improved.

Moreover, if the vapor deposition source 30A is used, the vapor deposition source 30A is always fixed directly under the substrate 90 . For this reason, the vapor deposition material 30m is less likely to deviate from the substrate 90, and the adhesion efficiency of adhering to the substrate 90 is improved. As a result, the material usage efficiency of the vapor deposition material 30m is greatly improved.

Moreover, if the deposition source 30A is used, the vacuum chamber 10 does not require a moving space for moving the deposition source 30A relative to the substrate 90 in parallel. As a result, the size of the vacuum vessel 10 can be reduced.

Also, in the deposition source 30A, a plurality of ejection nozzles 320 are arranged side by side from the center 31c of the container 31A toward the outer peripheral edge 31e. Therefore, even if the distance between the substrate 90 and the vapor deposition source 30A is shortened, a film of uniform thickness can be formed on the substrate 90. FIG. As a result, the adhesion efficiency with which the vapor deposition material 30m adheres to the substrate 90 is further improved, and the material usage efficiency of the vapor deposition material 30m is greatly improved.

In addition, in the deposition source 30A, since the plurality of evaporation containers 32A can be accommodated in the storage container 31A, each of the plurality of evaporation containers 32A is filled with a different type of vapor deposition material, or the plurality of evaporation containers 32A are divided into groups. can be filled with a different vapor deposition material. As a result, a multilayered film of multiple materials or a mixed film of multiple materials can be formed on the substrate 90 . In other words, the degree of freedom in selecting the material for the film formed on the substrate 90 is improved.

Moreover, when the dielectric heating method is employed as the heating mechanism 33, the responsiveness of heat conduction from the heating mechanism 33 to the vapor deposition material 30m is improved. Therefore, the temperature of the vapor deposition material 30m can be sharply increased in a short time (for example, several minutes). Thereby, the waiting time of the substrate 90 before starting the film formation can be shortened, and the takt efficiency is further improved.

Moreover, in 30 A of vapor deposition sources, 32 A of evaporation containers are comprised so that attachment or detachment is possible from 31 A of storage containers. This facilitates maintenance of the evaporation container 32A.

Moreover, in the vapor deposition source 30A, when the shapes of the plurality of evaporation containers 32A are the same, the shutters of the same shape can be reused as the shutters 60 covering the respective evaporation containers 32A. This simplifies the configuration of the shutter mechanism.

(Modification 1)

FIGS. 4A and 4B are schematic top views of modifications of the vapor deposition source according to this embodiment.

In the deposition source 30B shown in FIG. 4A, the outer shape of the container 31B on the XY axis plane is, for example, rectangular.

For example, the main body 310B of the storage container 31B is a rectangular parallelepiped container with a closed bottom and an open top. The main body portion 310B accommodates the partition portion 316 and the reflector portion 312 . Inside each of the main body portion 310B and the partition portion 316, a flow path through which the coolant flows may be provided.

The partition 316 extends along the straight line 31L including the center 31c of the container 31B. Both ends of the partition portion 316 are connected to the inner wall of the main body portion 310B. The interior of the container 31B is partitioned into two spaces by the partition 316 .

A plurality of reflector sections 312 are arranged in each space partitioned by the partition section 316 (for example, two each). Each of the plurality of reflector portions 312 extends, for example, in a direction orthogonal to the straight line 31L.

The interior of the storage container 31B is divided into a grid pattern by partitions 316 and a plurality of reflectors 312 symmetrical about the straight line 31L.

For example, the container 31B has a plurality of spaces 317 (second spaces). In the example of FIG. 4A, for example, six spaces 317 are shown. Each volume of the plurality of spaces 317 is substantially the same. The planar shape of the space 317 is, for example, a rectangle.

Further, the shape of each of the plurality of evaporation vessels 32B is configured line-symmetrically with respect to its own centerline 32c and is substantially the same. Each planar shape of the plurality of evaporation containers 32B is, for example, a rectangular shape. Any one of the plurality of evaporation containers 32B is arranged in one of the plurality of spaces 317 . For example, the evaporation container 32</b>B may be placed in at least one of the multiple spaces 317 , may be placed in all of the multiple spaces 317 , or may be placed in one space 317 . Also, the evaporation container 32B is detachable from the storage container 31B.

A plurality of ejection nozzles 320 are arranged side by side in the longitudinal direction of the evaporation container 32B. For example, the plurality of ejection nozzles 320 are arranged side by side in a direction orthogonal to the straight line 31L. Also, the maximum length L of the arrangement area 320 b in which the plurality of ejection nozzles 320 are arranged is shorter than the diameter Rs of the substrate 90 . A plurality of arrangement areas 320b are arranged on the left and right sides of the straight line 31L. Moreover, when the vapor deposition source 30B is viewed from above in the Z-axis direction, at least a portion of each of the plurality of arrangement regions 320b overlaps the substrate 90 . Note that the ejection nozzle 320 is not provided directly below the central axis 20c of the substrate holder 20. As shown in FIG.

In particular, when the plurality of ejection nozzles 320 are arranged in the same pattern in each evaporation container 32B, two evaporation containers 32B facing each other across the center 31c are selected from the plurality of evaporation containers 32B, When one evaporation container 32B is revolved around the center 31c to the position of the other evaporation container 32B, the plurality of ejection nozzles 320 provided in one evaporation container 32B are aligned with the plurality of ejection nozzles 320 provided in the other evaporation container 32B. It overlaps with the ejection nozzle 320 .

Also, the arrangement pattern of the ejection nozzles 320 is not limited to the arrangement pattern shown in FIG. For example, as in the vapor deposition source 30C shown in FIG. 4B, when two evaporation containers 32B facing each other across the straight line 31L are selected from the plurality of evaporation containers 32B, the plurality of evaporation containers provided in one of the evaporation containers 32B The ejection nozzles 320 may be arranged line-symmetrically with the plurality of ejection nozzles 320 provided in the other evaporation container.

Furthermore, the arrangement pattern of the ejection nozzles 320 may be a mixed pattern of the pattern shown in FIG. 4(a) and the pattern shown in FIG. 4(b). For example, the pattern shown in FIG. 4B may be selected for a pair of evaporation containers 32B arranged with the center 31c interposed therebetween, and the pattern shown in FIG. 4A may be selected for the other evaporation containers 32B.

Even if the vapor deposition sources 30B and 30C having such planar shapes different from the vapor deposition source 30A are used, the maximum length L of the arrangement region 320b in which the plurality of jet nozzles 320 are arranged is shorter than the diameter Rs of the substrate 90, and the plurality of jet nozzles Since the nozzles 320 are arranged side by side in the longitudinal direction of the evaporation container 32B, the vapor deposition sources 30B and 30C have the same effect as the vapor deposition source 30A.

Furthermore, in the deposition sources 30B and 30C, the evaporation container 32B extends long in the direction perpendicular to the straight line 31L. Thereby, each evaporation container 32B can be filled with more vapor deposition materials 30m, and the vapor deposition time can be lengthened.

(Modification 2)

FIG. 5 is a schematic cross-sectional view of another modification of the vapor deposition source according to this embodiment.

In the deposition source 30</b>D shown in FIG. 5 , one of the plurality of ejection nozzles 320 is tilted toward the central axis 20 c of the substrate holder 20 . The inclination angle of the ejection nozzles 320 from the normal to the top plate portion 313 may be configured to increase from the center 31c toward the outer peripheral edge 31e, and may be configured to increase for each group of the plurality of ejection nozzles 320. good too. Such a configuration of the ejection nozzle 320 may also be applied to the vapor deposition sources 30B and 30C.

With such a configuration, the evaporation material 30m is less likely to deviate from the substrate 90, and the efficiency of adhesion to the substrate 90 is improved. As a result, the material usage efficiency of the vapor deposition material 30m is greatly improved.

Although the embodiments of the present invention have been described above, it is needless to say that the present invention is not limited to the above-described embodiments and can be modified in various ways. Each embodiment is not limited to an independent form, and can be combined as much as technically possible.

DESCRIPTION OF SYMBOLS 1... Film-forming apparatus 10... Vacuum container 20... Substrate holder 20c... Central shaft 25... Rotating mechanism 251... Shaft part 252... Drive unit 30A, 30B, 30C, 30D... Vapor deposition source 30m... Vapor deposition material 31A, 31B... Container 31c Center 31e Peripheral edge 31L Straight line 310A, 310B Main body 311, 316 Partition 312 Reflector 313 Top plate 313h Through hole 314, 317 Space 315 Pedestal 32A, 32B Evaporation vessel 321 Upper surface part 322 Body part 32c Center line 320 Ejection nozzle 320a, 320b Arrangement area 33 Heating mechanism 60 Shutter 70 Exhaust mechanism 90 Substrate

Claims (18)

A deposition source facing a substrate holder that supports a substrate and rotates around the center of the substrate,
a containment vessel;
and a plurality of evaporation vessels housed in the housing vessel,
The container includes a main body, a partition provided with a path through which a coolant flows, a reflector that is a heat reflecting plate, and a top plate that covers the main body, the partition, and the reflector. and
The main body portion is a container with a closed lower portion and an open upper portion, and accommodates the partition portion and the reflector portion,
any one of the plurality of evaporation containers is accommodated in any one of a plurality of spaces partitioned by the partition section and the reflector section;
Each of the plurality of evaporation containers is provided with a plurality of ejection nozzles for ejecting the vapor deposition material,
A vapor deposition source, wherein a maximum length of an arrangement region in which the plurality of ejection nozzles are arranged in each of the plurality of evaporation vessels is shorter than a diameter of the substrate. A vapor deposition source according to claim 1,
A vapor deposition source, wherein a relative position of the center of the container with respect to the center of the substrate holder is fixed when the vapor deposition material is jetted from the plurality of jet nozzles. The deposition source according to claim 1 or 2,
The said arrangement|positioning area is arranged in multiple numbers around the center of the said container. Deposition source. The deposition source according to any one of claims 1 to 3,
Each of the plurality of spaces is divided radially from the center of the storage container toward the outer peripheral edge of the storage container by the partition section and the reflector section .
Evaporation source. The deposition source according to any one of claims 1 to 4,
The plurality of ejection nozzles are arranged in parallel from the center of the container toward the outer peripheral edge of the container. The deposition source according to any one of claims 3 to 5,
When two evaporation containers are selected from the plurality of evaporation containers and one of the evaporation containers revolves around the center to the position of the other evaporation container, the plurality of ejection nozzles provided in the one evaporation container overlaps with the plurality of ejection nozzles provided in the other evaporation vessel. The deposition source according to claim 1 or 2,
The said arrangement|positioning area is a vapor deposition source arrange|positioned in multiple numbers on both sides of the straight line containing the center of the said container. A vapor deposition source according to claim 1, 2 or 7,
Each of the plurality of spaces is partitioned into a grid pattern symmetrically about a straight line including the center of the storage container by the partition section and the reflector section .
Evaporation source. A vapor deposition source according to claim 1, 2, 7, or 8,
The plurality of ejection nozzles are arranged in parallel in the longitudinal direction of the evaporation container. The deposition source according to any one of claims 1, 2, 7 to 9,
When two evaporation containers facing each other across the center are selected from the plurality of evaporation containers, and one of the evaporation containers revolves around the center to the position of the other evaporation container, the the plurality of ejection nozzles provided in the vapor deposition source overlap with the plurality of ejection nozzles provided in the other evaporation container. A vapor deposition source according to any one of claims 1, 2, 7 to 10,
When two evaporation containers facing each other across a straight line including the center of the storage container are selected from the plurality of evaporation containers, the plurality of ejection nozzles provided in one evaporation container are provided in the other evaporation container. A vapor deposition source arranged line-symmetrically with the plurality of ejection nozzles. A vapor deposition source according to any one of claims 1 to 11,
When two of the ejection nozzles are selected from the plurality of ejection nozzles, the ejection nozzle arranged closer to the center of the storage container is configured to have a smaller diameter. A vapor deposition source according to any one of claims 1 to 12,
At least two of the ejection nozzles are arranged in parallel in a direction in which the substrate holder rotates in any one of the plurality of evaporation vessels. A vapor deposition source according to any one of claims 1 to 13,
A vapor deposition source in which one of the plurality of ejection nozzles is tilted toward the central axis. A vapor deposition source according to any one of claims 1 to 14,
The vapor deposition source, wherein the plurality of evaporation containers are configured to be detachable from the storage container. A vapor deposition source according to any one of claims 1 to 15,
The plurality of evaporation containers are heated by an induction heating method. a substrate holder that supports a substrate and rotates around the center of the substrate;
A storage container facing the substrate holder and a plurality of evaporation vessels stored in the storage container, wherein the storage container includes a main body and a partition provided with a path through which a coolant flows. and a reflector portion that is a heat reflecting plate, and a top plate portion that covers the main body portion, the partition portion, and the reflector portion, and the main body portion is a container whose lower portion is closed and whose upper portion is open. , the partition and the reflector are accommodated, one of the plurality of evaporation containers is accommodated in one of a plurality of spaces partitioned by the partition and the reflector, and the Each of the plurality of evaporation vessels is provided with a plurality of ejection nozzles for ejecting vapor deposition materials, and in each of the plurality of evaporation vessels, the maximum length of the arrangement area where the plurality of ejection nozzles are arranged is the diameter of the substrate. a deposition source configured to be shorter than
A film forming apparatus comprising: a vacuum vessel that accommodates the substrate holder and the vapor deposition source. supporting a substrate on a substrate holder, rotating the substrate holder around the center of the substrate,
facing the deposition source to the substrate holder;
A storage container and a plurality of evaporation vessels stored in the storage container are provided, and the storage container includes a main body, a partition having a path through which a refrigerant flows, and a heat reflecting plate. The container includes a reflector, the main body, the partition, and a top plate covering the reflector, wherein the main body is a container with a closed lower part and an open upper part, and the partition and the reflector. and any one of the plurality of evaporation vessels is accommodated in one of a plurality of spaces divided by the partition section and the reflector section, and each of the plurality of evaporation vessels accommodates is provided with a plurality of ejection nozzles for ejecting the vapor deposition material, and in each of the plurality of evaporation containers, the maximum length of the arrangement area in which the plurality of ejection nozzles are arranged is shorter than the diameter of the substrate. A vapor deposition method for forming a film on the substrate by evaporating the vapor deposition material from a vapor deposition source.

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