JP7223604B2 - Vacuum deposition equipment - Google Patents

Vacuum deposition equipment Download PDF

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JP7223604B2
JP7223604B2 JP2019044356A JP2019044356A JP7223604B2 JP 7223604 B2 JP7223604 B2 JP 7223604B2 JP 2019044356 A JP2019044356 A JP 2019044356A JP 2019044356 A JP2019044356 A JP 2019044356A JP 7223604 B2 JP7223604 B2 JP 7223604B2
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文伸 西尾
寿充 中村
万里 深尾
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Ulvac Inc
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Description

本発明は、被成膜基板が設置される真空チャンバ内に複数の蒸着源が設けられ、各蒸着源から蒸着物質を夫々昇華または気化させて被成膜基板表面に多層膜を成膜できる真空蒸着装置に関する。 The present invention provides a vacuum in which a plurality of vapor deposition sources are provided in a vacuum chamber in which a film formation substrate is installed, and a multilayer film can be formed on the surface of the film formation substrate by sublimating or vaporizing the vapor deposition material from each vapor deposition source. It is related with a vapor deposition apparatus.

この種の真空蒸着装置は、例えば有機EL素子の製造工程にて真空雰囲気中で被成膜基板としてのガラス基板(以下、「基板」という)に対して有機EL素子の有機多層膜を成膜するのに一般に利用されている。このものは、基板が配置される真空チャンバと、加熱手段を有して互いに異種の蒸着物質が夫々セットされる蒸着源と、蒸着源と基板との間に設けられるシャッタとを備え、シャッタにより蒸着源のうち何れか一つを順次、開放することで基板表面に多層膜を成膜できるようにしている(例えば、特許文献1参照)。 This type of vacuum deposition apparatus forms an organic multilayer film of an organic EL element on a glass substrate (hereinafter referred to as a "substrate") as a film-forming substrate in a vacuum atmosphere, for example, in the manufacturing process of an organic EL element. commonly used to This device comprises a vacuum chamber in which a substrate is placed, a vapor deposition source having heating means and in which different types of vapor deposition substances are respectively set, and a shutter provided between the vapor deposition source and the substrate. By sequentially opening any one of the vapor deposition sources, a multilayer film can be formed on the substrate surface (see, for example, Patent Document 1).

ここで、有機EL素子は、液晶表示素子と比較して視認性や省電力化に優れるなどの利点があることから、日々改良が進められており、これに伴って新規な有機材料も次々と開発されている。このような有機材料(蒸着物質)は、上記従来例の真空蒸着装置を用い、複数種の有機材料を蒸着源にセットし、真空雰囲気中で基板に対して順次成膜して所定の膜構成を持つ有機多層膜を実際に製作して、評価される。具体的には、例えば、有機材料A~Dがあるとして、1)A層、B層及びC層を順次積層してなる有機多層膜、2)A層、B層及びD層を順次積層してなる有機多層膜、3)A層、C層及びD層を順次積層してなる有機多層膜などの膜構成の異なるものを基板表面に複数製作して、評価される。 Since organic EL devices have advantages such as better visibility and power saving compared to liquid crystal display devices, improvements are being made every day, and along with this, new organic materials are being developed one after another. being developed. Such an organic material (vapor deposition substance) is formed by sequentially forming films on a substrate in a vacuum atmosphere using the vacuum vapor deposition apparatus of the above-described conventional example, setting a plurality of types of organic materials in the vapor deposition source, and forming a predetermined film structure. is evaluated by actually producing an organic multilayer film with Specifically, for example, assuming that there are organic materials A to D, 1) an organic multilayer film formed by sequentially laminating layers A, B, and C; 3) A plurality of layers having different film structures, such as an organic multilayer film formed by sequentially laminating layers A, C and D, are fabricated on the surface of a substrate and evaluated.

然しながら、上記従来例の真空蒸着装置を用いたのでは、複数枚の基板を真空チャンバ内に順次出し入れして基板毎に有機多層膜を夫々成膜していくことなり、しかも、基板の出入れ時には蒸着源の作動が停止される場合もある。このため、例えば各有機多層膜に共通の有機材料Aが用いられるといっても、基板の出入れ時や蒸着源の再作動時に真空チャンバ内の真空雰囲気や有機材料の飛散分布が変化するため、有機材料Aを蒸着してなるA層が同一条件下で成膜されたとは言えず、これでは、有機多層膜を正しく評価できない虞がある。 However, if the above conventional vacuum deposition apparatus is used, a plurality of substrates must be sequentially taken in and out of the vacuum chamber to deposit an organic multilayer film on each substrate. Occasionally, the operation of the deposition source is stopped. For this reason, for example, even though the organic material A common to each organic multilayer film is used, the vacuum atmosphere in the vacuum chamber and the scattering distribution of the organic material change when the substrate is taken in and out or when the deposition source is restarted. , it cannot be said that the layer A formed by vapor-depositing the organic material A was formed under the same conditions, and there is a possibility that the organic multilayer film cannot be evaluated correctly.

特開2007-332433号公報JP-A-2007-332433

本発明は、以上の点に鑑み、一定の条件下で、単一の被成膜基板内に膜構成の異なる多層膜を成膜できるようにした真空蒸着装置を提供することをその課題としている。 In view of the above points, it is an object of the present invention to provide a vacuum deposition apparatus capable of forming multilayer films having different film structures on a single substrate under certain conditions. .

上記課題を解決するために、被成膜基板が設置される真空チャンバ内に複数の蒸着源が設けられ、各蒸着源から蒸着物質を夫々昇華または気化させて被成膜基板表面に多層膜を成膜できる本発明の真空蒸着装置は、蒸着源と被成膜基板との間に配置されて、昇華または気化した蒸着物質の被成膜基板への付着領域を被成膜基板面内の一部に制限する開口を持つエリアマスクと、真空チャンバ内でエリアマスクと被成膜基板とを相対移動させて被成膜基板面内における付着領域を変更する変更手段とを更に備えることを特徴とする。 In order to solve the above problems, a plurality of vapor deposition sources are provided in a vacuum chamber in which a film formation substrate is installed, and a multilayer film is formed on the film formation substrate surface by sublimating or vaporizing the vapor deposition material from each vapor deposition source. The vacuum vapor deposition apparatus of the present invention capable of forming a film is disposed between a vapor deposition source and a film formation substrate so that a sublimated or vaporized vapor deposition material adheres to the film formation substrate in one area within the film formation substrate surface. and a changing means for changing the adhesion region in the surface of the film-forming substrate by relatively moving the area mask and the film-forming substrate in the vacuum chamber. do.

本発明によれば、変更手段により真空チャンバ内で被成膜基板とエリアマスクとを相対移動させるだけで、被成膜基板面内への付着領域を変更できる。このため、真空チャンバ内に対して被成膜基板を出し入れすることなく、単一の被成膜基板面内に膜構成の異なる多層膜の複数を成膜することが可能になる。その結果、例えば、被成膜基板面内の何れの領域においても特定の層を同一条件下で成膜できるので、複数種の有機材料を被成膜基板に蒸着させて有機多層膜を製作し、評価することに最適なものとなる。ここで、この種の有機材料は一般に高価である。このため、別の真空チャンバなどで基板全面に亘って特定の層を予め成膜しておけば、評価に要するコストを削減でき、有利である。 According to the present invention, it is possible to change the adhesion region within the surface of the film formation substrate only by relatively moving the film formation substrate and the area mask in the vacuum chamber by the changing means. Therefore, it is possible to form a plurality of multilayer films having different film structures on the surface of a single film formation substrate without taking the film formation substrate into and out of the vacuum chamber. As a result, for example, a specific layer can be formed under the same conditions in any region within the surface of the film-forming substrate, so that multiple kinds of organic materials can be vapor-deposited on the film-forming substrate to produce an organic multilayer film. , is best suited for evaluation. Here, organic materials of this kind are generally expensive. Therefore, if a specific layer is formed in advance over the entire surface of the substrate in a separate vacuum chamber or the like, the cost required for evaluation can be reduced, which is advantageous.

本発明において、変更手段は、エリアマスクを支持する固定枠と、エリアマスクの上方に設置されて被成膜基板を支持する可動枠とを備え、可動枠を上下動する第1駆動部とこの可動枠をエリアマスクの中心を通る上下方向の軸線回りに回転駆動する第2駆動部とが設けられることが好ましい。これにより、エリアマスクに対して被成膜基板を相対回転させるだけで、被成膜基板面内への付着領域を変更する構成が実現できる。 In the present invention, the changing means includes a fixed frame that supports the area mask, and a movable frame that is installed above the area mask and supports the film formation substrate. It is preferable to provide a second driving section that drives the movable frame to rotate around a vertical axis passing through the center of the area mask. As a result, it is possible to change the deposition area within the surface of the film formation substrate only by rotating the film formation substrate relative to the area mask.

また、被成膜基板の下面に、複数の微小開口が開設されたパターンマスクが設けられていれば、被成膜基板面内への付着領域の変更時に、パターンマスクが被成膜基板に成膜済みの層を保護する役割を果たし、有利である。 Further, if a pattern mask with a plurality of fine openings is provided on the bottom surface of the film formation substrate, the pattern mask can be formed on the film formation substrate when changing the adhesion region within the film formation substrate surface. Advantageously, it serves to protect the coated layer.

本発明の実施形態の真空蒸着装置を、基板とパターンマスクとエリアマスクを互いに分離した状態を示す模式断面図。1 is a schematic cross-sectional view showing a state in which a substrate, a pattern mask, and an area mask are separated from each other in a vacuum deposition apparatus according to an embodiment of the present invention; FIG. 実施形態の真空蒸着装置を、基板とパターンマスクとエリアマスクを合体した状態を示す模式断面図。FIG. 2 is a schematic cross-sectional view showing a state in which a substrate, a pattern mask, and an area mask are combined in the vacuum deposition apparatus of the embodiment. (a)~(d)は、付着領域を4分割して基板への成膜を説明する図。(a) to (d) are diagrams for explaining film formation on a substrate by dividing an adhesion region into four. (a)~(d)は、変形例に係る付着領域を6分割して基板への成膜を説明する図。(a) to (d) are diagrams for explaining film formation on a substrate by dividing an adhesion region according to a modification into six.

以下、図面を参照して、被成膜基板を矩形(正方形)の輪郭を持つガラス基板(以下、「基板Sw」という)とし、基板Sw面内を均等な4個の付着領域に分け、各付着領域に異なる膜構成の多層膜を成膜するものを例に、本発明の真空蒸着装置の実施形態を説明する。なお、以下においては、上、下といった方向を示す用語は、真空蒸着装置の設置姿勢である図1を基準とする。 Hereinafter, with reference to the drawings, a glass substrate having a rectangular (square) outline (hereinafter referred to as "substrate Sw") is used as a film formation substrate, and the surface of the substrate Sw is divided into four uniform adhesion areas. An embodiment of the vacuum deposition apparatus of the present invention will be described by taking as an example an apparatus for depositing a multilayer film having a different film structure on the deposition area. In the following description, terms indicating directions such as up and down are based on FIG. 1, which is the installation posture of the vacuum deposition apparatus.

図1及び図2を参照して、本実施形態の真空蒸着装置VMは、真空チャンバ1を備え、真空チャンバ1には、特に図示して説明しないが、排気管を介して真空ポンプが接続され、所定圧力に真空引きして真空雰囲気を形成できるようになっている。真空チャンバ1の下壁1a内面(真空チャンバ1内)には、間隔を存して複数個の蒸着源2が設けられている。 Referring to FIGS. 1 and 2, the vacuum deposition apparatus VM of the present embodiment includes a vacuum chamber 1 to which a vacuum pump is connected via an exhaust pipe (not shown and described). , a vacuum atmosphere can be formed by evacuating to a predetermined pressure. A plurality of vapor deposition sources 2 are provided at intervals on the inner surface of the lower wall 1a of the vacuum chamber 1 (inside the vacuum chamber 1).

各蒸着源2は、蒸着物質たる固体の有機材料21を収容する坩堝22を有する。坩堝22は、鉛直方向上面を開口した有底筒状の輪郭を有し、モリブデン、チタン、ステンレスやカーボンなどの熱伝導が良く、高融点の材料から形成され、上面開口側から、例えば粉末状の有機材料21が充填できるようにしている。坩堝22の周囲には、シースヒータやランプヒータ等の公知のものからなる加熱手段23が設けられ、坩堝22に収容された有機材料21を加熱して昇華または蒸発させることができるようにしている。また、各坩堝22の周囲の下壁1aには回転軸24が夫々立設され、各回転軸24の先端には各坩堝22の上面開口を夫々覆うことが可能なシャッター板25が連結されている。そして、各回転軸24を図示省略する駆動手段により回転させて複数の坩堝22のうち何れか一つの上面開口を順次、開放することで何れかの有機材料21を選択的に基板Sw表面に付着させて成膜できるようにしている。 Each evaporation source 2 has a crucible 22 containing a solid organic material 21 as an evaporation substance. The crucible 22 has a bottomed cylindrical profile with an open top in the vertical direction, and is made of a material with good thermal conductivity and a high melting point, such as molybdenum, titanium, stainless steel, or carbon. of organic material 21 can be filled. A known heating means 23 such as a sheath heater or a lamp heater is provided around the crucible 22 so that the organic material 21 contained in the crucible 22 can be heated to sublime or evaporate. A rotating shaft 24 is erected on the lower wall 1a around each crucible 22, and a shutter plate 25 capable of covering the top opening of each crucible 22 is connected to the tip of each rotating shaft 24. there is Then, each rotating shaft 24 is rotated by a driving means (not shown) to sequentially open the upper surface opening of any one of the plurality of crucibles 22, thereby selectively attaching any organic material 21 to the surface of the substrate Sw. It is made possible to form a film.

各坩堝22が設けられた領域に対向させて真空チャンバ1の上部空間には、各坩堝22と基板Swとの間に配置されて、昇華または気化した有機材料21の基板Swへの付着領域を基板Sw面内の一部に制限する開口を持つエリアマスクAmと、真空チャンバ1内でエリアマスクAmと基板Swとを相対移動させて基板Sw面内における付着領域を変更する変更手段3とが設けられている。変更手段3は、真空チャンバ1内の真空雰囲気と隔絶されるように真空チャンバ1の上壁内面に吊設した有底筒状の輪郭を持つ固定枠31を備える。固定枠31の下面には底板部31aが設けられ、この底板部31aには板厚方向に貫通する第1開口31bが開設され、第1開口31bの外周縁部上面でエリアマスクAmが支持されるようになっている。 In the upper space of the vacuum chamber 1 facing the region where each crucible 22 is provided, a region where the sublimated or vaporized organic material 21 adheres to the substrate Sw is arranged between each crucible 22 and the substrate Sw. An area mask Am having an opening limited to a part of the surface of the substrate Sw, and a changing means 3 for relatively moving the area mask Am and the substrate Sw within the vacuum chamber 1 to change the attachment region within the surface of the substrate Sw. is provided. The changing means 3 includes a fixed frame 31 having a bottomed tubular contour suspended from the inner surface of the upper wall of the vacuum chamber 1 so as to be isolated from the vacuum atmosphere in the vacuum chamber 1 . A bottom plate portion 31a is provided on the lower surface of the fixed frame 31. A first opening 31b is formed through the bottom plate portion 31a in the plate thickness direction, and the area mask Am is supported on the upper surface of the outer peripheral edge of the first opening 31b. It has become so.

エリアマスクAmは、アルミナなどの金属またはポリイミドなどの樹脂製の板状部材で構成され、基板Swに対応する輪郭を持つこの基板Swより一回り大きい面積に形成されたものである。エリアマスクAmには、図3に示すように、そのマスク中心回りに同等の面積を持つ4個の(矩形の)仮想領域が並ぶように区画したときの何れか1個の仮想領域に対応させて、板厚方向に貫通する成膜開口Aoが開設されている。これにより、後述するように、エリアマスクAmの成膜開口Aoの位相に合致する基板Swの部分が付着領域となる。また、エリアマスクAmの外周縁部には、その中心線上に夫々位置させてその内方に向けて窪む4個の半円状の凹部Arが形成されている。固定枠31の底板部31aには、180度位相をずらして2本の位置決めピン31cが立設され、各位置決めピン31cをエリアマスクAmの互いに向かい合う凹部Arに夫々係合させることで、エリアマスクAmが固定枠31に位置決めされるようにしている。 The area mask Am is composed of a plate-shaped member made of metal such as alumina or resin such as polyimide, and is formed in an area one size larger than the substrate Sw having a contour corresponding to the substrate Sw. As shown in FIG. 3, the area mask Am is made to correspond to any one of the four (rectangular) virtual regions having the same area around the center of the mask and partitioned so as to line up. A film formation opening Ao is formed through the plate in the thickness direction. As a result, as will be described later, the portion of the substrate Sw that matches the phase of the film formation opening Ao of the area mask Am becomes the attachment region. In addition, four semicircular concave portions Ar are formed on the outer peripheral edge portion of the area mask Am so as to be positioned on the center line thereof and recessed inward. On the bottom plate portion 31a of the fixed frame 31, two positioning pins 31c are erected with a phase difference of 180 degrees. Am is positioned on the fixed frame 31 .

また、変更手段3は、固定枠31の内方空間に設けられる、基板Swを支持する可動枠32と基板Swの下方でパターンマスクPmを支持する支持枠33とを更に備える。可動枠32は、筒状の輪郭を有し、その上面には、真空チャンバ1の上壁に開設した貫通孔11に挿通されて真空チャンバ1内へとのびる回転軸34が連結されている。そして、真空チャンバ1外に位置する回転軸34の部分は、この回転軸34をその軸線Cl回りに所定の回転角ずつ回転駆動すると共に所定のストロークで上下動するアクチュエータ35に連結されている。本実施形態では、基板Swに対する成膜が実施される成膜位置(図2に示す位置)と、成膜位置の上方で位置決めピン31cの干渉を受けずに可動枠32の回転を許容する回転位置(図1に示す位置)との間で可動枠32を上下動する第1駆動部と、回転位置にて可動枠32をエリアマスクAmの中心を通る軸線Cl回りに回転駆動する第2駆動部とをアクチュエータ35が兼用するようになっている。この場合、貫通孔11を囲うように真空チャンバ1の上壁には真空ベローズ12が設けられ、真空雰囲気を維持した状態で回転軸34を回転駆動及び上下動できるようにしている。可動枠32の底板部32aには第2開口32bが開設され、後述の如く基板SwがセットされるキャリアCaが、第2開口32bの外周縁部上面で支持されるようになっている。 The changing unit 3 further includes a movable frame 32 that supports the substrate Sw and a support frame 33 that supports the pattern mask Pm below the substrate Sw, which are provided in the inner space of the fixed frame 31 . The movable frame 32 has a cylindrical outline, and a rotary shaft 34 extending into the vacuum chamber 1 through a through hole 11 formed in the upper wall of the vacuum chamber 1 is connected to the upper surface of the movable frame 32 . The portion of the rotating shaft 34 positioned outside the vacuum chamber 1 is connected to an actuator 35 that rotates the rotating shaft 34 about the axis Cl by a predetermined rotation angle and moves up and down with a predetermined stroke. In the present embodiment, a film formation position (position shown in FIG. 2) where film formation is performed on the substrate Sw and a rotation that allows rotation of the movable frame 32 above the film formation position without interference from the positioning pins 31c. position (the position shown in FIG. 1), and a second drive that rotates the movable frame 32 around the axis Cl passing through the center of the area mask Am at the rotation position. The actuator 35 also serves as the part. In this case, a vacuum bellows 12 is provided on the upper wall of the vacuum chamber 1 so as to surround the through hole 11 so that the rotating shaft 34 can be rotated and moved up and down while maintaining the vacuum atmosphere. A second opening 32b is formed in the bottom plate portion 32a of the movable frame 32, and a carrier Ca in which the substrate Sw is set as described later is supported on the upper surface of the outer peripheral portion of the second opening 32b.

キャリアCaは、上記エリアマスクAmと同様に、アルミナなどの金属またはポリイミドなどの樹脂製の板状部材で構成され、エリアマスクAmと同等の輪郭(及び面積)を持つように形成されている。キャリアCaの上面には、板厚方向に窪む、基板Swの輪郭に対応する基板収容部Chが形成され、基板収容部Chに基板Swを落とし込むようにして基板Swをセットできるようにしている。キャリアCaの外周縁部にもまた、エリアマスクAmと同様に、4個の半円状の凹部Crが形成され、可動枠32を回転位置からエリアマスクAmに向けて下動させたとき、位置決めピン31cがキャリアCaの互いに向かい合う凹部Crに夫々係合することで、成膜位置にてエリアマスクAmに対してキャリアCaが位置(及び位相)決めされるようになっている。 Like the area mask Am, the carrier Ca is made of a plate-shaped member made of metal such as alumina or resin such as polyimide, and is formed to have the same outline (and area) as the area mask Am. The upper surface of the carrier Ca is formed with a substrate accommodation portion Ch corresponding to the outline of the substrate Sw, which is recessed in the plate thickness direction, so that the substrate Sw can be set by dropping the substrate Sw into the substrate accommodation portion Ch. . Similarly to the area mask Am, four semicircular concave portions Cr are also formed on the outer peripheral edge of the carrier Ca, and when the movable frame 32 is moved downward from the rotation position toward the area mask Am, positioning is performed. By engaging the pins 31c with the concave portions Cr of the carrier Ca facing each other, the carrier Ca is positioned (and phased) with respect to the area mask Am at the film forming position.

支持枠33は、アルミナなどの金属またはポリイミドなどの樹脂製の板状部材で構成され、その中央領域には第3開口33aが開設され、第3開口33aの外周縁部上面でパターンマスクPmが支持されるようになっている。支持枠33の外周部上面には、可動枠32の周壁部32cを貫通して上下にのびる駆動軸36の下端が連結され、この駆動軸36は、可動枠32の上部に設けた直動モータ等の駆動部37によって上下動されるようになっている。これにより、基板Swに対する成膜が実施される成膜位置(図2に示す位置)と、成膜位置の上方で位置決めピン31cの干渉を受けずに、可動枠32と一体の支持枠33の回転を許容する回転位置(図1に示す位置)との間で、支持枠33を上下動できるようになっている。 The support frame 33 is made of a plate-shaped member made of metal such as alumina or resin such as polyimide. It is supported. The lower end of a drive shaft 36 extending vertically through the peripheral wall portion 32c of the movable frame 32 is connected to the upper surface of the outer peripheral portion of the support frame 33. It is adapted to be moved up and down by a drive unit 37 such as. As a result, the film formation position (position shown in FIG. 2) where film formation is performed on the substrate Sw and the supporting frame 33 integrated with the movable frame 32 are prevented from being interfered by the positioning pins 31c above the film formation position. The support frame 33 can be moved up and down between the rotation position (the position shown in FIG. 1) that allows rotation.

パターンマスクPmは、上記エリアマスクAmと同様に、アルミナなどの金属またはポリイミドなどの樹脂製の板状部材で構成され、エリアマスクAmと同等の輪郭を持つように形成され、板厚方向に貫通する複数の微小開口Poが開設されている。パターンマスクPmの外周縁部にもまた、エリアマスクAmと同様、4個の半円状の凹部Prが形成され、支持枠33を回転位置からエリアマスクAmに向けて下動させたとき、位置決めピン31cがパターンマスクPmの互いに向かい合う凹部Prに夫々係合することで、支持枠33の成膜位置にてエリアマスクAmに対してパターンマスクPmが位置(及び位相)決めされるようにしている。以下、図3に示すように基板Swへの有機材料の付着領域をエリアA,B,C,Dとし、上記真空蒸着装置VMを用いて各エリアA~Dに多層膜を成膜する成膜方法について説明する。 Like the area mask Am, the pattern mask Pm is composed of a plate-shaped member made of metal such as alumina or resin such as polyimide, and is formed to have the same outline as the area mask Am, and penetrates in the plate thickness direction. A plurality of fine openings Po are provided. Similarly to the area mask Am, four semicircular concave portions Pr are also formed on the outer peripheral edge of the pattern mask Pm. By engaging the pins 31c with the recesses Pr facing each other in the pattern mask Pm, the pattern mask Pm is positioned (and phased) with respect to the area mask Am at the film formation position of the support frame 33. . Hereinafter, as shown in FIG. 3, areas A, B, C, and D are attached to the substrate Sw, and multilayer films are formed in each area A to D using the vacuum deposition apparatus VM. I will explain how.

図1に示す状態では、可動枠32と支持枠33とは夫々回転位置にあり、図外の搬送ロボットにより、基板SwをセットしたキャリアCa、パターンマスクPm及びエリアマスクAmが固定枠31、可動枠32及び支持枠33の所定位置に夫々設置される。次に、真空ポンプを作動させて真空チャンバ1内を真空排気し、所定圧力に到達すると、駆動部37により支持枠33を上動させ、パターンマスクPmの上面が可動枠32の底板部32aに当接する中間位置に支持枠33を移動する。そして、アクチュエータ35により可動枠32を支持枠33と一体に下動させて、可動枠32の底板部32aがパターンマスクPmの上面に当接する成膜位置に可動枠32及び支持枠33を移動する。このとき、位置決めピン31cがキャリアCa及びパターンマスクPmの互いに向かい合う凹部Cr,Prに夫々係合してエリアマスクAmに対してキャリアCa及びパターンマスクPmが位置決めされ、エリアマスクAm、パターンマスクPmとキャリアCaが互いに上下に積み重ねられた状態(一体化した状態)となる。この状態では、エリアマスクAmの成膜開口AoがエリアAを臨むようになり、エリアAが付着領域となる(図2及び図3(a)参照)。そして、各蒸着源2のシャッター板25により複数の坩堝22のうち何れか一つを順次、開放することで何れかの有機材料21を選択的に基板Sw表面に付着させて成膜して、多層膜が得られる。 In the state shown in FIG. 1, the movable frame 32 and the support frame 33 are in their rotating positions, and the carrier Ca on which the substrate Sw is set, the pattern mask Pm, and the area mask Am are moved to the fixed frame 31 and the movable frame 33 by a transport robot (not shown). They are installed at predetermined positions on the frame 32 and the support frame 33, respectively. Next, the vacuum pump is actuated to evacuate the inside of the vacuum chamber 1, and when a predetermined pressure is reached, the support frame 33 is moved upward by the drive unit 37 so that the upper surface of the pattern mask Pm touches the bottom plate portion 32a of the movable frame 32. The support frame 33 is moved to an intermediate position where it abuts. Then, the movable frame 32 and the support frame 33 are moved downward together with the support frame 33 by the actuator 35, and the movable frame 32 and the support frame 33 are moved to the film forming position where the bottom plate portion 32a of the movable frame 32 contacts the upper surface of the pattern mask Pm. . At this time, the positioning pins 31c are engaged with the facing recesses Cr and Pr of the carrier Ca and the pattern mask Pm, respectively, so that the carrier Ca and the pattern mask Pm are positioned with respect to the area mask Am. The carriers Ca are stacked one above the other (integrated state). In this state, the film formation opening Ao of the area mask Am faces the area A, and the area A becomes the adhesion area (see FIGS. 2 and 3A). Then, by sequentially opening any one of the plurality of crucibles 22 by the shutter plate 25 of each vapor deposition source 2, any one of the organic materials 21 is selectively adhered to the surface of the substrate Sw to form a film, A multilayer film is obtained.

エリアAへの成膜が終了すると、上記と逆の手順で、支持枠33及び可動枠32を上動して回転位置に夫々戻し、エリアマスクAm、パターンマスクPmとキャリアCaが互いに分離された状態とする(図1及び図3(b)参照)。この状態で、アクチュエータ35により可動枠32を支持枠33と一体に軸線回り(図3中、反時計回り)に90度回転させる。すると、エリアマスクAmの成膜開口AoがエリアBを臨む位相となり(図2及び図3(c)参照)、上記手順に従い、エリアマスクAm、パターンマスクPmとキャリアCaを一体化した状態にすると、エリアBが付着領域となる。そして、各蒸着源2のシャッター板25により複数の坩堝22のうち何れか一つを順次、開放することで何れかの有機材料21を選択的に基板Sw表面に付着させて成膜して、多層膜が得られる(図3(d)参照)。以降、上記操作を繰り返してエリアC、エリアDに対して多層膜が成膜される。 When the film formation on the area A is completed, the support frame 33 and the movable frame 32 are moved upward and returned to the rotating position by the reverse procedure, and the area mask Am, the pattern mask Pm and the carrier Ca are separated from each other. state (see FIGS. 1 and 3(b)). In this state, the actuator 35 rotates the movable frame 32 integrally with the support frame 33 about the axis (counterclockwise in FIG. 3) by 90 degrees. Then, the film formation opening Ao of the area mask Am becomes a phase facing the area B (see FIGS. 2 and 3(c)). , area B becomes the adhesion region. Then, by sequentially opening any one of the plurality of crucibles 22 by the shutter plate 25 of each vapor deposition source 2, any one of the organic materials 21 is selectively adhered to the surface of the substrate Sw to form a film, A multilayer film is obtained (see FIG. 3(d)). After that, the above operation is repeated to deposit a multilayer film on the area C and the area D. FIG.

以上の実施形態によれば、変更手段3により真空チャンバ1内でエリアマスクAmに対して基板Swを相対回転させるだけで、基板Sw面内への付着領域を変更できる。このため、真空チャンバ1内に対して基板Swを出し入れすることなく、単一の基板Sw面内に膜構成の異なる多層膜の複数を成膜することが可能になる。その結果、例えば、基板Sw面内の何れの領域においても特定の層を同一条件下で成膜できるので、複数種の有機材料を基板Swに蒸着させて有機多層膜を製作し、評価することに最適なものとなる。しかも、パターンマスクPmを設けているため、基板Sw面内への付着領域の変更時に、パターンマスクPmが基板Swに成膜済みの層を保護する役割を果たし、有利である。 According to the above-described embodiment, only by rotating the substrate Sw relative to the area mask Am within the vacuum chamber 1 by the changing means 3, the adhesion region within the substrate Sw surface can be changed. Therefore, it is possible to deposit a plurality of multilayer films having different film configurations on the surface of a single substrate Sw without taking the substrate Sw into and out of the vacuum chamber 1 . As a result, for example, since a specific layer can be formed under the same conditions in any region in the plane of the substrate Sw, it is possible to manufacture and evaluate an organic multilayer film by evaporating a plurality of types of organic materials on the substrate Sw. be optimal for Moreover, since the pattern mask Pm is provided, the pattern mask Pm plays a role of protecting the layer already formed on the substrate Sw when changing the adhesion region in the substrate Sw surface, which is advantageous.

以上、本発明の実施形態について説明したが、本発明の技術思想の範囲を逸脱しない限り、種々の変形が可能である。上記実施形態では、4つのエリアA,B,C,Dに多層膜を成膜するものを例に説明したが、これに限定されるものではなく、図4に示すうように、蒸着物質の基板Swへの付着領域を6つのエリアA,B,C,D,E,Fとし、基板SwとパターンマスクPmとを60度ずつ回転する(図4(c)参照)ようにしてもよい。また、上記実施形態では、エリアマスクAmに対して基板Swを相対回転させる変更手段3を例に説明したが、エリアマスクAmと基板Swとを相対移動させて基板Sw面内における付着領域を変更できるものであれば、これに限定されるものでない。例えば、基板Swに対してエリアマスクAmを相対移動させるものでもよく、また、特に図示して説明しないが、成膜開口Aoを備えるエリアマスクAmを、基板Swの下方で上下方向に直交する方向から基板中心に向けて進退自在とし、成膜開口Aoの位置を変えることで基板Sw面内への付着領域を変更できるようにしてもよい。 Although the embodiments of the present invention have been described above, various modifications are possible without departing from the scope of the technical idea of the present invention. In the above embodiment, an example of forming a multilayer film in four areas A, B, C, and D has been described, but the present invention is not limited to this, and as shown in FIG. Six areas A, B, C, D, E, and F may be attached to the substrate Sw, and the substrate Sw and the pattern mask Pm may be rotated by 60 degrees (see FIG. 4(c)). Further, in the above-described embodiment, the changing means 3 for rotating the substrate Sw relative to the area mask Am has been described as an example. If possible, it is not limited to this. For example, the area mask Am may be moved relative to the substrate Sw. Also, although not shown and described, the area mask Am having the film formation opening Ao may be moved below the substrate Sw in a direction orthogonal to the vertical direction. It may be possible to freely move forward and backward toward the center of the substrate, and change the adhesion area within the surface of the substrate Sw by changing the position of the film formation opening Ao.

また、上記実施形態では、エリアマスクAm、パターンマスクPmとキャリアCaに夫々設けた凹部Ar,Pr,Crと位置決めピン31cとによって、エリアマスクAmに対するパターンマスクPmとキャリアCaとの位置や位相が決められるものを例に説明したが、これに限定されるものではなく、例えば、可動枠の回転軸に公知の位置決め機構や位相決め機構を設けるようにしてもよい。 Further, in the above embodiment, the recesses Ar, Pr, and Cr provided in the area mask Am, the pattern mask Pm, and the carrier Ca, and the positioning pins 31c, allow the position and phase of the pattern mask Pm and the carrier Ca with respect to the area mask Am to be adjusted. Although an example that can be determined has been described, it is not limited to this, and for example, a known positioning mechanism or phase determining mechanism may be provided on the rotating shaft of the movable frame.

Am…エリアマスク、Ao…成膜開口(開口)、Pm…パターンマスク、Po…微小開口、Sw…基板(被成膜基板)、1…真空チャンバ、2…蒸着源、21…有機材料(蒸着物質)、3…変更手段、31…固定枠、32…可動枠、35…アクチュエータ(第1駆動部,第2駆動部)。 Am... Area mask, Ao... Film formation opening (aperture), Pm... Pattern mask, Po... Micro opening, Sw... Substrate (film formation target substrate), 1... Vacuum chamber, 2... Evaporation source, 21... Organic material (deposition substance), 3... changing means, 31... fixed frame, 32... movable frame, 35... actuator (first drive section, second drive section).

Claims (2)

被成膜基板が設置される真空チャンバ内に複数の蒸着源が設けられ、各蒸着源から蒸着物質を夫々昇華または気化させて被成膜基板表面に多層膜を成膜できる真空蒸着装置において、
蒸着源と被成膜基板との間に配置されて、昇華または気化した蒸着物質の被成膜基板への付着領域を被成膜基板面内の一部に制限する開口を持つエリアマスクと、真空チャンバ内でエリアマスクと被成膜基板とを相対移動させて被成膜基板面内における付着領域を変更する変更手段とを備え
前記変更手段は、前記エリアマスクを支持する固定枠と、前記エリアマスクの上方に設置されて前記被成膜基板を支持する可動枠とを備え、可動枠を上下動する第1駆動部とこの可動枠を前記エリアマスクの中心を通る上下方向の軸線回りに回転駆動する第2駆動部とが設けられていることを特徴とする真空蒸着装置。
A vacuum deposition apparatus in which a plurality of deposition sources are provided in a vacuum chamber in which a film formation substrate is installed, and a multilayer film can be formed on the surface of the film formation substrate by sublimating or vaporizing a vapor deposition material from each vapor deposition source,
an area mask disposed between the vapor deposition source and the film formation substrate and having an opening for limiting a region in which the sublimated or vaporized vapor deposition material adheres to the film formation substrate to a part of the surface of the film formation substrate; changing means for relatively moving the area mask and the film formation substrate in the vacuum chamber to change the adhesion region in the film formation substrate surface ,
The changing means includes a fixed frame that supports the area mask, and a movable frame that is installed above the area mask and supports the film formation substrate. and a second drive section for rotating the movable frame about an axis in the vertical direction passing through the center of the area mask .
前記被成膜基板の下面に、複数の微小開口が開設されたパターンマスクが設けられることを特徴とする請求項記載の真空蒸着装置。
2. The vacuum deposition apparatus according to claim 1 , wherein a pattern mask having a plurality of fine openings is provided on the lower surface of said film-forming substrate.
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Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2004035983A (en) 2002-07-05 2004-02-05 Japan Science & Technology Corp Masking mechanism for combinatorial vapor deposition apparatus
JP2005150061A (en) 2003-11-20 2005-06-09 Showa Shinku:Kk Method and device for forming organic material thin film
JP2010163692A (en) 2010-04-12 2010-07-29 Hitachi Zosen Corp Alignment device for vacuum vapor deposition
JP2011233521A (en) 2010-04-28 2011-11-17 Samsung Mobile Display Co Ltd Thin film deposition device, method for manufacturing organic light-emitting display device utilizing the device, and organic light-emitting display device manufactured by using the method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004035983A (en) 2002-07-05 2004-02-05 Japan Science & Technology Corp Masking mechanism for combinatorial vapor deposition apparatus
JP2005150061A (en) 2003-11-20 2005-06-09 Showa Shinku:Kk Method and device for forming organic material thin film
JP2010163692A (en) 2010-04-12 2010-07-29 Hitachi Zosen Corp Alignment device for vacuum vapor deposition
JP2011233521A (en) 2010-04-28 2011-11-17 Samsung Mobile Display Co Ltd Thin film deposition device, method for manufacturing organic light-emitting display device utilizing the device, and organic light-emitting display device manufactured by using the method

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