KR20060126265A - Chemical vapor deposition apparatus for multiple substrates - Google Patents

Abstract

A chemical vapor deposition apparatus for a multiple substrate is provided to increase growing speed of a substrate by forming a depositing layer having uniform quality on the substrate. An air inlet(12) and an air outlet(14) are formed on a chamber(10). A heating unit(20) controls reactive temperature of a substrate(5) and the air flowed in through the air inlet. A substrate revolution unit(30) has a rotating plate that is rotatable in the chamber. Plural disk units(34) where the substrate is arranged are formed on the rotating plate. The substrate revolution unit rotates the substrate through rotation of the rotating plate. A substrate rotation unit(40) rotates the disk unit on the rotating plate by the rotation of the substrate revolution unit to give rotation to each substrate on the disk unit.

Description

Chemical Vapor Deposition Apparatus for Multiple Substrates

1 is a cross-sectional view showing an important part of a chemical vapor deposition apparatus according to an example of the prior art.

Fig. 2 is a sectional view showing an important part of a chemical vapor deposition apparatus according to another example of the prior art.

Figure 3 is a longitudinal sectional view showing a chemical vapor deposition apparatus of a multiple substrate according to the present invention.

Figure 4 is an enlarged cross-sectional view showing in detail the substrate revolving means and the substrate rotating means provided in the apparatus for chemical vapor deposition of multiple substrates according to the present invention.

5 is a detailed view of an apparatus for chemical vapor deposition of multiple substrates according to the present invention;

      a) is a detail of the rotating plate, b) is a detail of the fixing plate.

6A) to 6D) are explanatory diagrams showing step by step operations of a chemical vapor deposition apparatus of a multi-substrate according to the present invention;

       * Explanation of symbols for main parts of drawings *

1 .... Chemical Vapor Deposition Apparatus of Multiple Substrate According to the Present Invention

5 .... Substrate 10 .... Chamber

12 .... gas inlet 14 .... gas outlet

20 .... heating means 30 .... substrate revolving means

32 .. Carousel 32a .... round hole

34 .... disc means 36 .... axis of rotation

38 .... rotating means 40 .... substrate rotating means

42 .... Turning 45 .... Home

46 .... mounting plate 48 .... bracket

100,200 .... conventional vapor deposition apparatus 103 .... base

105 .... gas supply line 106 .... substrate holder

114 .... support 117 .... spill open

118 .... Tray 120 .... Substrate

210 .... Multiple disks 212 .... Wafer

216 .... Support

      The present invention relates to an apparatus for forming a high temperature chemical vapor deposition on a substrate, and more particularly, when the chemical vapor deposition is formed on the entire surface of a plurality of substrates, the uniform film growth on the substrate is achieved by simultaneously rotating and rotating the substrate. A chemical vapor deposition apparatus of multiple substrates can be achieved.

In general, chemical vapor phase deposition (CVD) is used as a main method for growing various crystal films on various substrates. In general, the quality of the grown crystals is superior to the liquid growth method, but the growth rate of the crystals is relatively slow. To overcome this, the method of simultaneously growing on several substrates in one growth cycle is widely adopted.

However, when the film is grown simultaneously on several substrates as described above, in order to ensure the same quality for the crystal film grown on each substrate, the temperature of each substrate and the flow of the reaction gas on the various substrates must be kept the same.

To achieve this goal, several injection tubes can be used to achieve a similar gas flow on each substrate, or multiple substrates can be arranged radially about one axis of rotation and the entire substrate rotated on the same axis. Methods (spinning), and methods of rotating (rotating) each substrate independently, and the like, and these conventional methods are sometimes used individually or sometimes in combination.

      However, in a structure in which several substrates are arranged on one axis of rotation, and at least one or more of the reaction gases are radially spread out on the axis of rotation, the distribution of the reaction gas is rotated about the axis of rotation by rotating the entire substrate simultaneously. It is possible to keep the gas flow the same by placing them in a concentric circle, but there is no way to avoid the difference in the concentration of the reaction gas occurring between the part located on the rotation axis and the part far away on the rotation axis. It is a good solution to rotate (rotate) each about its central axis.

      In addition, such vapor deposition generally requires maintaining the substrate at a high growth temperature in order for the injected gas to react on the substrate, and therefore also need to maintain the support portion of the substrate at a high temperature. However, these temperature holding conditions cause various difficulties in simultaneously executing the revolution and rotation of each substrate. In addition, the use of a gear structure based on a metal material which is generally used at high temperature is accompanied by a lot of constraints, which makes it difficult to be concretely realized.

A related art in this regard is shown in FIG. 1. This relates to Korean Patent Laid-Open Publication No. 2003-59199. In this conventional vapor deposition apparatus 100, a base 103 is positioned in a reactor housing, and the base 103 flows through a gas supply line 105. At least one substrate holder 106 which is rotationally driven by the gas flow is provided, and the substrate holder 106 is disposed in the support sphere 114 on a gas cushion and fixed in position. In addition, the support tool 114 is formed in the tray 118 disposed below the outlet opening 117 provided in the supply line 105. This conventional technique is a structure in which the substrate holder 106 is rotated by the gas supplied through the gas supply line 105 to rotate, and thus the substrate 120 mounted thereon is rotated.

As described above, the related art has a structure in which the substrate is rotated and rotated at the same time by the rotation of the base holder 106 together with the revolution of the base 103.

However, this conventional technique uses gas flow, which makes it difficult to precisely control the gas flow in the reactor or to control the rotational and rotating speeds of the respective substrates because it is difficult to precisely control the gas flow for rotation. Therefore, it is difficult to achieve a chemical vapor deposition of a uniform film on each substrate.

Meanwhile, another conventional technique is shown in FIG. This is described in Korean Patent No. 0137876. This conventional apparatus 200 rotates while carrying a wafer 212 that is epitaxially growing while a plurality of disks 210 rotate about an axis. The support 216 with the disks 210 is disposed in an idle state, and epitaxial growth for processing the plurality of wafers 212, which are semiconductor materials, by exposing the plurality of wafers 212 to a reactive gas flow. It is a reactor.

In addition, both the disk 210 and the support 216 are to be rotated and rotated by the gas flow supplied from the bottom.

Thus, while the conventional technique is to vaporize the surface of the wafer 212 while rotating and revolving at the same time, the gas vapor deposition on the surface of the structure due to the rotation and revolving structure using the gas flow, the chemical vapor phase of the uniform film on the wafer It is difficult to form a deposition.

      In addition, all of these conventional techniques are affected by the rotation depending on the pressure state in the reactor, and the mass change of each substrate or wafer, for example, using different substrate thicknesses or using different kinds of substrates. There is a problem that a difference occurs in the rotation speed of the substrate.

      Disclosure of Invention The present invention is to solve the conventional problems as described above, and it is possible to simultaneously rotate and rotate a plurality of substrates even under high temperature deposition film growth conditions, and to provide a stable and stable substrate for multiple substrates. It is a first object to provide a chemical vapor deposition apparatus.

In addition, the present invention is not affected by the rotation according to the pressure state in the reactor, and does not cause a difference in the rotation of the substrate even by the mass change of each substrate. It is a second object to provide an apparatus for chemical vapor deposition of multiple substrates adapted to increase uniformity.

The present invention to achieve the above object,

A chamber in which a gas inlet and a gas outlet are formed;

Heating means for controlling a reaction temperature between a substrate and a gas introduced through the gas inlet;

A substrate revolving means having a rotating plate rotatable inside the chamber, and having a plurality of disk means each having a substrate disposed thereon, the substrate rotating means providing an idle to the substrate through rotation of the rotating plate; And

A substrate rotating means configured to rotate each of the disk means on the rotating plate by the rotation of the substrate revolving means to impart a rotation to each substrate on the disk means. Provided is a chemical vapor deposition apparatus for multiple substrates.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

In the multi-substrate chemical vapor deposition apparatus 1 according to the present invention, as shown in FIG. 3, the device is adapted to simultaneously rotate and rotate during deposition of the substrate 5 to increase the uniformity of the thickness and composition of the vapor deposition film. It is about.

The multi-substrate chemical vapor deposition apparatus 1 according to the present invention has a chamber 10 in which a gas inlet 12 and a gas outlet 14 are formed.

A gas supply means (not shown) for providing chemical vapor to the substrate 5 is disposed outside the chamber 10, and chemical vapor is introduced through the gas inlet 12, which is a gas outlet. It is discharged from the chamber 10 through 14. The chamber 10 has the gas inlet 12 located at the top or one side of the chamber 10, flows through the chamber 10, and is disposed at the bottom or the other side of the chamber 10. It is a structure that is discharged to the outside through 14).

Therefore, preferably, the chamber 10 is formed with a gas inlet 12 and a gas outlet 14 such that at least one deposition gas flows from the center of the rotating plate 32 in the center of the chamber 10 to the outer peripheral portion. .

      That is, the gas inlet 12 may be located at the center of the chamber upper surface.

      In addition, the gas outlet 14 may be located at the lower side of the chamber, or may be located at the lower surface of the chamber.

      In addition, a gas inlet 12 is formed on the side of the chamber 5 so that at least one deposition gas is introduced into the chamber, and a gas outlet 14 may be formed below the chamber.

In addition, the present invention increases the temperature in the chamber 10 by a predetermined value or more to maintain the deposition reaction temperature to maintain the heating means 20 to be deposited on the substrate 5 or the wafer from the gas Equipped. The heating means 20 may be an electric heater, high frequency induction, infrared radiation, laser, and the like, which may be selectively positioned inside and outside the chamber 10. In addition, although the heating means 20 is shown in both the outer side of the chamber 10 and the lower portion of the substrate 5 in Figure 3, this may be formed only one side.

In addition, the present invention is provided with a substrate revolving means (30) for imparting revolution to the substrate (5) inside the chamber (10). The substrate revolving means 30 includes a rotating plate 32 rotatable inside the chamber 10, and on the rotating plate 32 a plurality of disc means 34 each having a substrate 5 disposed thereon. The substrate 5 revolves through the rotation of the rotating plate 32.

4 and 5 show the substrate revolving means 30 in more detail.

The substrate revolving means 30 extends from the lower surface of the rotating plate 32 so that the rotating shaft 36 is sealable to the outside of the chamber 10, and the rotating shaft 36 is provided to the rotating means 38 made of a motor or the like. It is a structure that is connected to rotate to transmit power.

The disk means 34 are arranged concentrically about a rotating shaft 36 formed in the center of the rotating plate 32, each of which consists of disks, and the disk means 34 are also the rotating plate. It is arrange | positioned so that rotation is possible in each circular hole 32a formed in the 32.

In addition, in the circular hole 32a of the rotating plate 32, the disk means 34 is seated and rotatable step 32b is formed, respectively, and the substrate rotating means described later on the lower side of the step 32b. The projection 42 of 40 extends from the lower surface of the disc of the disc means 34.

Accordingly, the rotating plate 32 is rotated in the chamber 10 by the operation of the rotating means 38 made of a motor or the like, and the substrates 5 disposed on the disk means 34 are rotated in the rotating plate 32. It revolves around the rotating shaft 36.

In addition, the present invention includes a substrate rotating means 40 which allows the respective substrates 5 on the disk means 34 to rotate simultaneously while they are revolving.

The substrate rotating means 40 includes a protrusion 42 extending downward from the lower surface side of the disk means 34 and a fixing plate having a groove 45 on which the lower end of the protrusion 42 is fitted to slide and guide the slide movement. (46). In addition, the fixing plate 46 is preferably disposed in close contact with the lower surface of the rotating plate 32, and the outer edge thereof is fixed to the inner wall of the chamber 10, for example, through a plurality of brackets 48 and the like. It is a structure fixed to the chamber 10.

In addition, the grooves 45 formed on the upper surface of the fixing plate 46 are formed in a curved state on each of the four divided fixing plate 46, as shown in Figure 5b) and they are connected to each other in one continuous Form a track. The groove 45 is arranged such that the projections 42 extending downward from the disk means 34 move along the groove 45.

Therefore, when the rotating plate 32 is rotated about the rotating shaft 36 by the rotation of the substrate revolving means 30, the disk means 34 disposed in the circular hole 32a of the rotating plate 32 has a lower surface. The projections 42 extending from the disk move along the groove 45 to achieve the rotation of the disk means 34 on the rotating plate 32.

Meanwhile, in FIGS. 4 and 5, the rotating plate 32 and the fixed plate 46 are illustrated to have a disc structure having the same size, but the present invention is not limited thereto and may have different sizes and shapes.

Reference numeral 70 is a hole of the fixed plate 46 through which the rotating shaft 36 passes.

The chemical vapor deposition apparatus 1 of the multi-substrate according to the present invention configured as described above may achieve both the revolution and the rotation of the substrate 5 during the deposition of the substrate 5.

First, as shown in FIG. 3, in the chamber 10, a plurality of substrates 5 are placed on the plurality of disk means 34 provided on the rotating plate 32, respectively, and the chamber 10 is disposed. One or more gases of chemical vapor are supplied and discharged into the chamber, and at the same time maintained by the heating means 20 at a constant temperature in the chamber 10.

Then, when the rotating plate 32 is rotated about the rotating shaft 36 by the operation of the rotating means 38 provided outside the chamber 10, the substrates 5 on the disk means 34 are rotated plate 32 In addition to rotating to rotate about the axis of rotation (36) to 36.

That is, as shown in Figs. 6a) to 6d), any one of the disc means 34 (e.g., hatched disc means 34) on the rotating plate 32 passes through Figs. 6a) to 6d). Rotates approximately 90 degrees counterclockwise by the rotating plate (32).

At the same time, when the rotating plate 32 rotates about its rotation axis 36 as described above, all the projections 42 of the disk means 34 are inserted into the groove 45 of the fixing plate 46 below the rotating plate 32. As they are, they move along the grooves 45 of the fixed plate 46 during the rotation of the rotary plate 32. In this case, since the grooves 45 are each formed in an arc shape, the protrusions 42 along the grooves 45 open the grooves 45 with respect to the central axis 34a of the disc means 34. Moving along, the position of the protrusions 42 is changed in the circumferential direction of the disk means 34.

For example, in FIG. 6A, the projection 42 of the disk means 34 is arranged to point in the approximately 90 ° direction, but when moving to FIG. 6B, the protrusion 42 is arranged to point in the approximately 135 ° direction. 6c), the projections 42 are arranged to point in the direction of approximately 270 °, and when moving to FIG. 6d), the protrusions 42 are arranged to point in the direction of approximately 0 °.

When the rotating plate 32 is rotated 90 degrees about its axis 36 in the counterclockwise direction, the disk means 34 rotates by about 270 degrees clockwise about its central axis 34a. Each rotates.

The rotation of the disk means 34 is such that the projection 42 is formed by moving the arc-shaped groove 45. When the rotating plate 32 is continuously rotated (orbiting the substrate), the disk means 34 ) Continuous rotation (rotation of the substrate) is achieved.

This operation is performed because the grooves 45 formed on the fixing plate 46 have the same shape in four quadrants of the fixing plate 46, and the grooves 45 have one continuous shape. The substrate 5 on the disc means 34 achieves continuous rotation at the same time as the revolution.

      As described above, according to the present invention, even under high temperature deposition film growth conditions, it is possible to simultaneously rotate and rotate a plurality of substrates, thereby improving the deposition quality of multiple substrates.

In addition, the present invention is not affected by the rotation according to the gas pressure state in the reactor, it is possible to achieve a stable deposition of the substrate at all times by not causing a difference in the revolution and rotation of the substrate even by the mass change of each substrate, etc. .

In addition, since a deposition film having a uniform quality is formed on the substrate, it is possible to increase the productivity of the substrate by increasing the growth rate of the substrate.

While the invention has been shown and described with respect to specific embodiments thereof, it has been described by way of example only to illustrate the invention, and is not intended to limit the invention to this particular structure. Those skilled in the art will appreciate that various modifications and changes of the present invention can be made without departing from the spirit and scope of the invention as set forth in the claims below. Nevertheless, it will be clearly understood that all such modifications and variations are included within the scope of the present invention.

Claims (15)

A chamber in which a gas inlet and a gas outlet are formed; Heating means for controlling a reaction temperature between a substrate and a gas introduced through the gas inlet; A substrate revolving means having a rotating plate rotatable inside the chamber, and having a plurality of disk means each having a substrate disposed thereon, the substrate rotating means providing an idle to the substrate through rotation of the rotating plate; And       A substrate rotating means configured to rotate each of the disk means on the rotating plate by the rotation of the substrate revolving means to impart a rotation to each substrate on the disk means. Chemical vapor deposition apparatus of multiple substrates.       2. The apparatus of claim 1, wherein the heating means is located under the substrate.       3. The chemical vapor deposition apparatus as claimed in claim 2, wherein the heating means is an RF induction heating apparatus.       The apparatus of claim 1, wherein the heating means is positioned laterally to surround the chamber.       5. A chemical vapor deposition apparatus as recited in claim 4, wherein said heating means is a resistance heater.       2. The substrate revolving means according to claim 1, wherein the rotational axis of the substrate revolving means is rotatably extended outwardly of the chamber from the lower surface of the rotating plate, and the disk means are rotatably arranged in respective holes formed in the rotating plate. Chemical vapor deposition apparatus for multiple substrates.       7. The disk means according to claim 6, wherein the disk means is composed of disks arranged concentrically around a rotating shaft formed at the center of the rotating plate, and the holes of the rotating plate are each seated by the disk means is characterized in that the rotatable step is formed. Chemical vapor deposition apparatus of multiple substrates.       The multi-substrate according to claim 1, wherein the substrate rotating means includes a projection extending downward from a lower surface side of the disk means, and a fixing plate having a groove formed at an upper surface thereof with a groove into which a lower end of the projection is inserted to slide and guide. Chemical vapor deposition apparatus.       The method of claim 8, wherein the fixing plate is placed in close contact with the lower surface of the rotating plate, the grooves formed on the upper surface of the fixing plate are formed in a curved state each on the fixing plate, are connected to each other to form a continuous track (Track) Chemical vapor deposition apparatus of multiple substrates, characterized in that the formation.       The apparatus of claim 1, wherein the rotating plate and the fixed plate have a disc structure of the same size.       The apparatus of claim 1, wherein a gas inlet and a gas outlet are formed in the chamber such that at least one deposition gas flows from the center of the rotating plate to the outer peripheral portion.       12. The apparatus of claim 11, wherein the gas inlet is located at the center of the chamber top surface.       12. The chemical vapor deposition apparatus as claimed in claim 11, wherein the gas outlet is located under the chamber side.       The apparatus of claim 11, wherein the gas outlet is located at a lower surface of the chamber.       The apparatus of claim 1, wherein a gas inlet is formed at an upper side of the chamber such that at least one deposition gas is introduced into the chamber, and a gas outlet is formed at the bottom of the chamber.

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