JP2002110513A - Liquid film drying method and device thereof - Google Patents

Liquid film drying method and device thereof

Info

Publication number
JP2002110513A
JP2002110513A JP2000296089A JP2000296089A JP2002110513A JP 2002110513 A JP2002110513 A JP 2002110513A JP 2000296089 A JP2000296089 A JP 2000296089A JP 2000296089 A JP2000296089 A JP 2000296089A JP 2002110513 A JP2002110513 A JP 2002110513A
Authority
JP
Japan
Prior art keywords
substrate
liquid film
processed
plate
airflow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000296089A
Other languages
Japanese (ja)
Inventor
Tatsuhiko Ema
達彦 江間
Shinichi Ito
信一 伊藤
Katsuya Okumura
勝弥 奥村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000296089A priority Critical patent/JP2002110513A/en
Priority to TW90122870A priority patent/TW516084B/en
Priority to CN 01140672 priority patent/CN1201375C/en
Priority to US09/961,288 priority patent/US6709699B2/en
Publication of JP2002110513A publication Critical patent/JP2002110513A/en
Priority to US10/736,580 priority patent/US20040126501A1/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To increase uniformity in film thickness, and at the same time to control treatment time for improving throughput in a liquid film drying method for removing a solvent in a liquid film formed on a substrate to be treated. SOLUTION: This liquid film drying method includes a process for providing a through hole 204, and for allowing a rectifying plate 200 to come close to the substrate 101 to be treated at distance where the rectifying plate 200 does not come into contact with the liquid film; a process for rotating the rectifying plate 200 for generating the air current between the substrate 101 to be treated and the lower surface of the rectifying plate 200; and a process for bringing the liquid film containing a dissolved substance into contact with the air current, for removing the solvent in the liquid film, and for forming a solid-phase film made of the dissolved substance on the substrate 101 to be treated.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体、液晶デバ
イス作成技術における塗布模作成方法に使用される液状
膜乾燥方法及び液状膜乾燥装置。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid film drying method and a liquid film drying apparatus used in a method for producing a coating in a semiconductor and liquid crystal device production technology.

【0002】[0002]

【従来の技術】これまで、レジスト膜等の溶媒を含む液
膜を被処理基板上に形成した後、該液膜を乾燥する工程
では、単純にホットプレート上で被処理基板を加熱する
ベーク法、真空ポンプに接続されたチャンバ内で減圧処
理を行なう減圧乾燥法が用いられてきた。
2. Description of the Related Art Heretofore, in a process of forming a liquid film containing a solvent such as a resist film on a substrate to be processed and then drying the liquid film, a baking method in which the substrate to be processed is simply heated on a hot plate is used. A vacuum drying method in which a vacuum treatment is performed in a chamber connected to a vacuum pump has been used.

【0003】しかし、ベーク法では溶媒の揮発が温度に
非常に敏感であるため、膜厚にバラツキが生じ、形成さ
れた膜厚の均一性に問題があった。
[0003] However, in the baking method, the volatilization of the solvent is very sensitive to the temperature, so that the film thickness varies, and there is a problem in the uniformity of the formed film thickness.

【0004】また、真空ポンプを用いた減圧乾燥法で
は、溶媒の飽和蒸気圧近辺における溶媒の除去に時間が
かかり、スループットの低下が問題となっていた。ま
た、そのスループットは、溶剤の物性や滴下量に左右さ
れ、処理時間の制御を行うことができなかった。
[0004] In the vacuum drying method using a vacuum pump, it takes time to remove the solvent near the saturated vapor pressure of the solvent, and there has been a problem that the throughput is reduced. Further, the throughput depends on the physical properties of the solvent and the amount of dripping, and the processing time cannot be controlled.

【0005】[0005]

【発明が解決しようとする課題】上述したように、ホッ
トプレートを用いたベーク法による液状膜の乾燥工程で
は、膜厚の不均一性が問題となっていた。また、減圧乾
燥法では、処理時間の制御が行えずスループットが低下
するという問題があった。
As described above, in the drying process of a liquid film by a baking method using a hot plate, nonuniformity of the film thickness has been a problem. Further, the vacuum drying method has a problem that the processing time cannot be controlled and the throughput is reduced.

【0006】本発明の目的は、液状膜の乾燥工程におい
て、膜厚の均一性を良くすると共に、処理時間の制御を
行ってスループットの向上を図り得る液状膜乾燥方法及
び液状膜乾燥装置を提供することにある。
It is an object of the present invention to provide a liquid film drying method and a liquid film drying apparatus capable of improving the uniformity of the film thickness and controlling the processing time to improve the throughput in the liquid film drying step. Is to do.

【0007】[0007]

【課題を解決するための手段】[構成]本発明は、上記
目的を達成するために以下のように構成されている。 (1)本発明(請求項1)は、被処理基板上に形成され
た溶質を含む液状膜中の溶媒を除去する液状膜乾燥方法
において、一つ以上の貫通孔を有する整流板を該被処理
基板上に前記液状膜に接触しない距離で近接させる工程
と、前記整流板を回転させて該被処理基板上と該整流板
下面との間に気流を生じさせる工程と、前記気流に液状
膜を接触させて前記液状膜中の溶剤を除去し、前記被処
理基板上に前記溶質からなる固相膜を形成する工程とを
含むことを特徴とする。
Means for Solving the Problems [Configuration] The present invention is configured as follows to achieve the above object. (1) The present invention (claim 1) provides a liquid film drying method for removing a solvent in a liquid film containing a solute formed on a substrate to be processed, wherein the rectifying plate having one or more through holes is provided. A step of bringing the liquid film close to the processing substrate at a distance that does not make contact with the liquid film; a step of rotating the rectifying plate to generate an airflow between the substrate to be processed and the lower surface of the rectifying plate; And removing a solvent in the liquid film to form a solid phase film made of the solute on the substrate to be processed.

【0008】本発明に好ましい形態を以下に記す。 (a) 前記被処理基板と前記整流板下面との間への気流の
導入が、前記整流板の回転により、前記被処理基板と前
記整流板下面との間で生じる圧力差を利用して行なわれ
ること。 (b) 前記被処理基板上と前記整流板下面との間に生じる
気流の向きを時間的に変化させること。前記被処理基板
と前記整流板下面との間の圧力と、前記整流板上面での
圧力との差を変化させて、前記被処理基板上と前記整流
板下面との間に生じる気流の向きを時間的に変化させる
こと。
Preferred embodiments of the present invention are described below. (a) The introduction of an airflow between the substrate to be processed and the lower surface of the rectifier plate is performed by utilizing the pressure difference generated between the substrate to be processed and the lower surface of the rectifier plate due to the rotation of the rectifier plate. Be done. (b) changing the direction of the air flow generated between the substrate to be processed and the lower surface of the rectifying plate with time; By changing the difference between the pressure between the substrate to be processed and the lower surface of the rectifier plate and the pressure at the upper surface of the rectifier plate, the direction of the airflow generated between the upper surface of the substrate to be processed and the lower surface of the rectifier plate is changed. Change over time.

【0009】(c) 前記整流板の中心軸と前記被処理基板
との中心とを異ならせること。前記異ならせ量を時間的
に変動させること。前記整流板の回転方向と逆の方向に
前記被処理基板を回転させること。
(C) The center axis of the rectifying plate is different from the center of the substrate to be processed. The amount of change is varied with time. Rotating the substrate to be processed in a direction opposite to a rotation direction of the rectifying plate.

【0010】(2)本発明(請求項8)は、被処理基板
上に形成された溶質を含む液状膜中の溶媒を除去する液
状膜乾燥方法において、整流板を該被処理基板直上に前
記液状膜に接触しない距離で近接させる工程と、前記整
流版と前記被処理基板間及び周囲を減圧状態に維持する
工程と、前記整流板を回転させて前記被処理基板上と該
整流板下面の間に気流を生じさせる工程と、前記気流に
前記液状膜を接触させて液状膜中の溶剤を除去し、前記
被処理基板上に前記溶質からなる固相膜を形成する工程
とを含むことを特徴とする。
(2) The present invention (claim 8) provides a liquid film drying method for removing a solvent in a liquid film containing a solute formed on a substrate to be processed. A step of approaching at a distance that does not make contact with the liquid film; a step of maintaining a reduced pressure between and between the rectifying plate and the substrate to be processed; and Generating a gas flow therebetween, and removing the solvent in the liquid film by contacting the liquid film with the gas flow, and forming a solid-phase film made of the solute on the substrate to be processed. Features.

【0011】(3)本発明(請求項9)に係わる液状膜
乾燥装置は、表面に溶媒を含む液状膜が形成された被処
理基板に対向配置され、一つ以上の貫通孔を有する整流
板と、この整流板を回転させる回転駆動部と、前記被処
理基板の反対側の前記整流板の貫通孔の開口部側に対向
配置された気流制御板と、前記整流板と前記被処理基板
の距離と前記整流板と前記気流制御板の距離とを相対的
に変化させる上下方向駆動部とを具備してなることを特
徴とする。
(3) A liquid film drying apparatus according to the present invention (claim 9) is disposed opposite to a substrate to be processed on which a liquid film containing a solvent is formed on the surface, and has a rectifying plate having at least one through hole. A rotation drive unit that rotates the rectifying plate, an airflow control plate disposed opposite to the opening side of the through hole of the rectifying plate on the opposite side of the substrate to be processed, and a rectifying plate and the substrate to be processed. A vertical drive unit for relatively changing a distance and a distance between the rectifying plate and the airflow control plate is provided.

【0012】(4)本発明(請求項10)は、表面に溶
媒を含む液状膜が形成された被処理基板に対向配置さ
れ、一つ以上の貫通孔を有する整流板と、この整流板を
回転させる回転駆動部と、前記貫通孔に対して気流を供
給する外部気流発生器とを具備してなることを特徴とす
る。
(4) According to the present invention (claim 10), a rectifying plate having at least one through-hole disposed opposite to a substrate to be processed having a liquid film containing a solvent formed on the surface thereof, It is characterized by comprising a rotation drive section for rotating, and an external airflow generator for supplying an airflow to the through hole.

【0013】上記二つの発明に好ましい形態を以下に記
す。 (a) 前記被処理基板及び整流板が内部に収納される減圧
チャンバと、前記減圧チャンバに接続され、該チャンバ
内を排気する真空ポンプとをさらに具備してなること。 (b) 前記整流板には複数の貫通孔があって、各貫通孔が
回転時に被処理基板上の任意の部分で時間的にほぼ同じ
割合で通過するように配置されていること。
Preferred embodiments of the above two inventions are described below. (a) The apparatus further comprises a decompression chamber in which the substrate to be processed and the rectifying plate are housed, and a vacuum pump connected to the decompression chamber and evacuating the chamber. (b) The current plate has a plurality of through-holes, and the through-holes are arranged so as to pass at substantially the same rate over an arbitrary portion on the substrate to be processed during rotation.

【0014】[作用]本発明は、上記構成によって以下
の作用・効果を有する。整流板を被処理基板上で高速回
転させることで基板上に均一な気流の流れを発生させる
ことで速やかに均一な塗布膜を作成することができる。
また、整流板の回転数及び被処理基板と整流板との距離
を適宜設定することで、溶剤の物性や滴下量に左右され
ずに、処理時間の制御を行うことができ、スループット
の向上を図ることができる。
[Function] The present invention has the following functions and effects by the above configuration. By rotating the current plate at a high speed on the substrate to be processed, a uniform flow of air is generated on the substrate, so that a uniform coating film can be quickly formed.
In addition, by appropriately setting the number of rotations of the current plate and the distance between the substrate and the current plate, the processing time can be controlled without being affected by the physical properties of the solvent or the amount of dripping, and the throughput can be improved. Can be planned.

【0015】整流板回転時に生じる整流板と基板との間
に生じる減圧状態を駆動力として気流を導入すること
で、乾燥工程の効率化を図ることができる。
By introducing an airflow using the reduced pressure generated between the current plate and the substrate during rotation of the current plate as a driving force, the efficiency of the drying process can be improved.

【0016】気流の向きを時間的に変化させることで、
気流の流れに沿った膜厚分布の傾きを抑え、より均一な
膜を形成することができる。
By changing the direction of the air flow over time,
The inclination of the film thickness distribution along the flow of the air current can be suppressed, and a more uniform film can be formed.

【0017】整流板の中心軸と被処理基板の中心軸とを
オフセットさせることにより、特異点を防ぎ、膜厚の均
一性を向上させることができる。また、オフセットの量
を時間的に変動させることで膜厚の均一性をさらに向上
させることができる。また、被処理基板も回転させるこ
とによって、乾燥効率を向上させることができる。
By offsetting the center axis of the current plate and the center axis of the substrate to be processed, a singular point can be prevented and the uniformity of the film thickness can be improved. Further, the uniformity of the film thickness can be further improved by changing the amount of the offset with time. The drying efficiency can be improved by rotating the substrate to be processed.

【0018】前記整流版と前記被処理基板間及び周囲を
減圧状態に維持し、前記整流板を回転させて前記被処理
基板上と該整流板下面の間に気流を生じさせる工程と、
飽和蒸気圧における溶剤の急速な揮発に伴う乱流の発生
を防ぎ、均一な塗布膜厚分布を得ることができる。
Maintaining a reduced pressure between and between the rectifying plate and the substrate to be processed, and rotating the rectifying plate to generate an airflow between the substrate to be processed and the lower surface of the rectifying plate;
Turbulence due to rapid evaporation of the solvent at the saturated vapor pressure can be prevented, and a uniform coating film thickness distribution can be obtained.

【0019】一つ以上の貫通孔を有する整流板を被処理
基板上で回転させることによって、被処理基板と整流板
との間が減圧状態になり、該貫通孔から気流が導入され
て、被処理基板上の液状膜を乾燥させることができる。
前記整流板と前記被処理基板の距離と前記整流板と前記
気流制御板の距離とを相対的に変化させることで、前記
整流板と前記被処理基板間の圧力と前記気流制御板と前
記被処理基板との圧力とに差を作ることができ、圧力差
に応じて気流の向きを変えることができる。
By rotating a rectifying plate having at least one through hole on the substrate to be processed, the pressure between the substrate to be processed and the rectifying plate is reduced. The liquid film on the processing substrate can be dried.
By relatively changing the distance between the rectifier plate and the substrate to be processed and the distance between the rectifier plate and the airflow control plate, the pressure between the rectifier plate and the substrate to be processed, the airflow control plate, and the A difference can be created between the pressure and the processing substrate, and the direction of the airflow can be changed according to the pressure difference.

【0020】整流板に設けられた貫通孔に対して外部気
流発生器で気流を供給することによって、効果的に被処
理基板上の液状膜を乾燥させることができる。
The liquid film on the substrate to be processed can be effectively dried by supplying an airflow to the through-hole provided in the rectifying plate by an external airflow generator.

【0021】各貫通孔が回転時に被処理基板上の任意の
部分で時間的にほぼ同じ割合で通過するように、複数の
貫通孔を配置することで、被処理基板に対して気流が均
一に接触するようになって、均一な膜を形成することが
できる。
By arranging a plurality of through-holes such that each through-hole passes through an arbitrary portion on the substrate to be processed at a substantially same rate during rotation, the airflow can be made uniform with respect to the substrate to be processed. As a result, a uniform film can be formed.

【0022】[0022]

【発明の実施の形態】本発明の実施の形態を以下に図面
を参照して説明する。
Embodiments of the present invention will be described below with reference to the drawings.

【0023】[第1の実施形態]本発明の乾燥装置及び
方法を説明に先立ち、先ず、液状膜の形成について、図
1を用いて説明する。図1は、本発明の第1の実施形態
に係わる液状膜(レジスト)の形成方法を説明するため
の図である。図1に示すように、薬液吐出ノズル110
を被処理基板101上でy方向に速度1m/secで往
復運動させると共に、x方向に被処理基板を順次移動さ
せ、薬液を線状(一筆書き状)に滴下し、直径200m
mの被処理基板全面に薬液を滴下することで被処理基板
101全面に、レジストA(溶質)を含む液状膜102
を形成した。
[First Embodiment] Prior to description of the drying apparatus and method of the present invention, first, formation of a liquid film will be described with reference to FIG. FIG. 1 is a diagram for explaining a method of forming a liquid film (resist) according to the first embodiment of the present invention. As shown in FIG.
Is reciprocated on the substrate 101 in the y direction at a speed of 1 m / sec, and the substrate is sequentially moved in the x direction.
The liquid film 102 containing the resist A (solute) is dropped on the entire surface of the substrate 101 by dropping a chemical solution on the entire surface of the substrate to be processed.
Was formed.

【0024】次に、回転機構を有した整流板を回転させ
ることで生じる気流により液状膜の溶剤の乾燥を行っ
た。図2に液状膜乾燥装置の概略構成を示す。
Next, the solvent of the liquid film was dried by an air current generated by rotating a current plate having a rotating mechanism. FIG. 2 shows a schematic configuration of the liquid film drying apparatus.

【0025】図2に示すように、整流板200は、被処
理基板に対して対向配置される直径250mmの第1の
円板201と、回転駆動部203を介して配設された直
径250mmの第2の円板202とから構成され、第1
の円板201,回転駆動部203,第2の円板202の
中央部には直径20mmの気流導入口204が貫通して
いる。第2の円板202に対向して、Z方向への駆動部
を有した被処理基板101と同径の気流コンダクタンス
制御板205が離間配設されている。
As shown in FIG. 2, the current plate 200 includes a first disk 201 having a diameter of 250 mm opposed to a substrate to be processed, and a 250 mm diameter disk disposed via a rotation driving unit 203. The first disk 202 and the first disk 202.
An air flow inlet 204 having a diameter of 20 mm penetrates through a central portion of the circular plate 201, the rotation drive unit 203, and the second circular plate 202. Opposed to the second disk 202, an airflow conductance control plate 205 having the same diameter as the substrate 101 having a drive unit in the Z direction is spaced apart therefrom.

【0026】次に、この液状膜乾燥装置を用いた乾燥方
法について説明する。先ず、図3に示すように、液状膜
102が形成された被処理基板101上に、整流板20
0を20mmのギャップで配置した。次いで、気流コン
ダクタンス制御板205と整流板200との距離を、被
処理基板101と整流板200との距離(20mm)よ
り大きい、30mmに設定した。そのままの配置状態
で、整流板200を3000rpmで5sec間、回転
させた。
Next, a drying method using the liquid film drying apparatus will be described. First, as shown in FIG. 3, the rectifying plate 20 is placed on the substrate 101 on which the liquid film 102 is formed.
0 was placed at a gap of 20 mm. Next, the distance between the airflow conductance control plate 205 and the rectifying plate 200 was set to 30 mm, which was larger than the distance (20 mm) between the substrate 101 to be processed and the rectifying plate 200. With the arrangement as it was, the current plate 200 was rotated at 3000 rpm for 5 seconds.

【0027】このとき被処理基板・整流板間と整流板・
気流コンダクタンス制御板間に発生する減圧状態を比べ
たとき、被処理基板・整流板間の減圧度の方が大きくな
る。よって、この減圧差を駆動力として、気流導入口2
04の第2の円板202側開口部から吸気され、第1の
円板201側開口部から排気されて、整流板200の気
流導入口204内では、下向きの気流が形成される。よ
って、被処理基板・第1の円板間には、中心部から外周
部に向かう気流が形成される。被処理基板・第2の円板
間に流れる気流とともに、被処理基板101上の液状膜
102は、基板中心部から周辺部へかけて溶剤が乾燥す
る。
At this time, between the substrate to be processed and the rectifying plate and between the rectifying plate
When the depressurized state generated between the airflow conductance control plates is compared, the degree of depressurization between the substrate to be processed and the rectifying plate is larger. Therefore, this pressure reduction difference is used as a driving force and the airflow inlet 2
Air is sucked in from the opening on the second disk 202 side and exhausted from the opening on the first disk 201 side, and a downward airflow is formed in the airflow inlet 204 of the rectifier plate 200. Therefore, an airflow from the central portion to the outer peripheral portion is formed between the substrate to be processed and the first disk. The solvent of the liquid film 102 on the substrate 101 to be processed is dried from the central portion to the peripheral portion of the substrate along with the airflow flowing between the substrate to be processed and the second disk.

【0028】次いで、図4に示すように、気流コンダク
タンス制御板205と整流板200との距離を、被処理
基板・整流板距離20mmより小さい、10mmに設定
し、そのままの状態で3000rpmで5sec間、整
流板200を回転させた。
Next, as shown in FIG. 4, the distance between the airflow conductance control plate 205 and the rectifier plate 200 is set to 10 mm, which is smaller than the distance between the substrate to be processed and the rectifier plate, that is, 20 mm. Then, the current plate 200 was rotated.

【0029】このとき、先ほどと同様に被処理基板・整
流板間と整流板・気流コンダクタンス制御板間に発生す
る減圧状態を比較すると、整流板・気流コンダクタンス
制御板間の減圧度の方が大きくなる。よって、この減圧
差を駆動力として、気流導入口204の第1の円板20
1側開口部から吸気され、第2の円板202側開口部か
ら排気されて、整流板200の気流導入口204内の気
流は上向きに流れる。被処理基板・第1の円板間には、
外周部から中心部に向かう気流が形成される。被処理基
板101上の液状膜102は、被処理基板・第1の円板
間の気流とともに、外周部から中心部へかけて溶剤が乾
燥する。
At this time, comparing the reduced pressure state generated between the substrate to be processed and the rectifying plate and the rectifying plate and the airflow conductance control plate in the same manner as above, the degree of reduced pressure between the rectifying plate and the airflow conductance control plate is larger. Become. Therefore, the first disc 20 of the airflow inlet 204 is used as a driving force using the pressure difference.
Air is sucked in from the opening on the first side and exhausted from the opening on the second disk 202 side, and the airflow in the airflow inlet 204 of the current plate 200 flows upward. Between the substrate to be processed and the first disk,
An airflow is formed from the outer periphery toward the center. In the liquid film 102 on the substrate 101 to be processed, the solvent is dried from the outer peripheral portion to the central portion together with the airflow between the substrate to be processed and the first disk.

【0030】上記工程を交互に6回づつ繰り返すことに
よりトータル60sec間で液状膜102中の溶剤を乾
燥させた。最後に整流板200下面を被処理基板101
表面から離し、最終的に基板全面に対して、気流方向に
偏り無く300nmの厚さで均一にレジストAの塗布膜
(固相膜)を形成した。
By repeating the above steps alternately six times, the solvent in the liquid film 102 was dried for a total of 60 seconds. Finally, the lower surface of the rectifying plate 200 is
Separated from the surface, finally, a coating film (solid phase film) of the resist A was formed uniformly on the entire surface of the substrate with a thickness of 300 nm without deviation in the airflow direction.

【0031】本実施形態では、図5に示すように、整流
板200と気流コンダクタンス制御板205との距離を
変えて、液状膜102上での気流の流れを交互に逆方向
に変えることにより、気流方向に偏りのない、均一な膜
厚分布が得られた。
In the present embodiment, as shown in FIG. 5, by changing the distance between the rectifying plate 200 and the airflow conductance control plate 205 to alternately change the airflow on the liquid film 102 in the opposite direction. A uniform film thickness distribution without deviation in the airflow direction was obtained.

【0032】また、整流板の回転数及び被処理基板と整
流板との距離を適宜設定することで、溶剤の物性や滴下
量に左右されずに、処理時間の制御を行うことができ、
スループットの向上を図ることができる。
Also, by appropriately setting the number of rotations of the current plate and the distance between the substrate to be processed and the current plate, the processing time can be controlled without being affected by the physical properties of the solvent or the amount of the solvent dropped.
Throughput can be improved.

【0033】なお、本実施形態における液状膜乾燥方法
においては、整流板と被処理基板および整流板と気流コ
ンダクタンス制御板の距離の時間に対する相対関係は本
実施形態に限るものではない。また、整流板の回転数も
3000rpmに限るものではない。これらは使用する
薬液によって適宜設定してよい。
In the liquid film drying method according to the present embodiment, the relative relationship of the distance between the current plate and the substrate to be processed and the distance between the current plate and the airflow conductance control plate with respect to time is not limited to the present embodiment. Further, the rotation speed of the current plate is not limited to 3000 rpm. These may be appropriately set depending on the chemical used.

【0034】また、本実施形態では、整流板と被処理基
板の距離と、整流板と気流コンダクタンス制御板の距離
の大小関係を、気流コンダクタンス制御板の移動で実現
したが、被処理基板と気流コンダクタンス制御板を固定
して、整流板を相対的に移動させて実現してもよい。
In this embodiment, the relationship between the distance between the rectifying plate and the substrate to be processed and the distance between the rectifying plate and the airflow conductance control plate is realized by moving the airflow conductance control plate. It may be realized by fixing the conductance control plate and relatively moving the current plate.

【0035】また、液状膜作成方法として、本実施形態
のようなスキャン塗布法のほか、中心部から周辺部に
(あるいはその逆)らせん状に薬液を滴下するスパイラ
ル塗布法を用いてもよいし、その他の液膜作成法を用い
てもよい。
As the liquid film forming method, in addition to the scan coating method as in the present embodiment, a spiral coating method in which a chemical solution is dropped spirally from a central portion to a peripheral portion (or vice versa) may be used. Alternatively, another liquid film forming method may be used.

【0036】[第2の実施形態]先ず、第1の実施形態
と同様に、被処理基板全面にレジストAの液膜を形成し
た。次に図6に示すような回転機構を有した整流板で液
状膜の溶剤の乾燥を行った。
[Second Embodiment] First, as in the first embodiment, a liquid film of a resist A was formed on the entire surface of a substrate to be processed. Next, the solvent of the liquid film was dried using a current plate having a rotating mechanism as shown in FIG.

【0037】図6(a),(b)に示すように、整流板
601は、被処理基板101に対向して配置された直径
250mmの円板である。整流板601には、φ5mm
の孔603が半径に対して比例して間隔が広くなるピッ
チで並んでらせん状に形成されている。整流板601の
被処理基板101側とは反対側の面には、大気圧以上、
例えば1.5kg/cm2 で一定の圧力を制御できる気
流供給器603が接続されている。
As shown in FIGS. 6A and 6B, the rectifying plate 601 is a circular plate having a diameter of 250 mm which is arranged to face the substrate 101 to be processed. The straightening plate 601 has a diameter of 5 mm.
The holes 603 are formed in a spiral shape in such a manner that the intervals are increased in proportion to the radius. On the surface of the rectifying plate 601 on the side opposite to the substrate to be processed 101 side, the atmospheric pressure
For example, an air flow supply device 603 that can control a constant pressure at 1.5 kg / cm 2 is connected.

【0038】整流板601に、半径に対して比例して間
隔が広くなるピッチで貫通孔が螺旋状に配置されている
のは、整流板601の回転時に円板の孔603が被処理
基板101面上で単位時間当たりどの半径位置において
も同じ数だけ通過するようにするためである。本実施形
態の場合、例えば基板の最外周(r=100mm)で直
径5mmの孔のピッチが30mmとすると以下各半径r
における孔のピッチP rは、 Pr=30×(r/100) で表される。
The straightening plate 601 is interposed in proportion to the radius.
Spiral holes are helically arranged at a pitch that widens
The reason is that when the current plate 601 is rotated, the holes 603 of the disc are processed.
At which radius position per unit time on the substrate 101 surface
Is to pass through the same number. This embodiment
In the case of the state, for example, the outermost periphery of the substrate (r = 100 mm)
If the pitch of the hole having a diameter of 5 mm is 30 mm, the radius r
Hole pitch P at rIs Pr= 30 × (r / 100).

【0039】次に、図6に示す乾燥装置を用いた乾燥工
程について説明する。図7に示すように、整流板601
を液状膜102上10mmの距離で配置させ、2000
rpmで図の向き(螺旋の巻き方向とは逆)に回転させ
て60sec処理を行い、液状膜の乾燥を行なった。次
いで、整流板601を被処理基板101表面から離し、
最終的に300nmの厚さでレジストBの塗布膜を形成
した。
Next, a drying process using the drying apparatus shown in FIG. 6 will be described. As shown in FIG.
Are placed on the liquid film 102 at a distance of 10 mm, and
The liquid film was dried by rotating at 60 rpm in the direction shown in the drawing (reverse to the winding direction of the spiral) for 60 seconds. Next, the current plate 601 is separated from the surface of the substrate 101 to be processed,
Finally, a coating film of the resist B was formed with a thickness of 300 nm.

【0040】本実施形態では、被処理基板101上の液
状膜102は整流板601の螺旋状の孔603から垂直
に吐出される気流に常に均一に接触し、それらの気流は
螺旋方向に基板外周方向にスムーズに排出されていくこ
とで液膜の乾燥を行なった。以上の工程で極めて均一で
フラットな膜厚分布が得られた。
In this embodiment, the liquid film 102 on the substrate 101 to be processed is always in uniform contact with the airflow vertically discharged from the spiral hole 603 of the current plate 601, and the airflow is generated in the spiral direction in the outer periphery of the substrate. The liquid film was dried by being smoothly discharged in the direction. Through the above steps, a very uniform and flat film thickness distribution was obtained.

【0041】本実施形態では、整流板の上部に気流供給
器を設け大気圧以上の圧力に設定することにより、気流
の吐出速度を増して乾燥の効率化を図ったが、場合によ
っては気流供給器を設けずに、整流板の回転により生じ
る基板面と整流板下面の間の減圧度のみの駆動力で気流
を発生させてもよい。また、設定する整流板の貫通孔
数、孔径・ピッチおよび回転数、ギャップは使用する薬
液によって適宜調節してよい。
In the present embodiment, an airflow supply device is provided above the flow straightening plate and is set to a pressure higher than the atmospheric pressure to increase the discharge speed of the airflow and improve the drying efficiency. The airflow may be generated by a driving force of only the degree of pressure reduction between the substrate surface and the lower surface of the rectifier plate, which is generated by the rotation of the rectifier plate, without providing a heater. Further, the number of through holes, the hole diameter / pitch, the number of rotations, and the gap of the current plate to be set may be appropriately adjusted depending on the chemical used.

【0042】また、液状膜作成方法として、本実施形態
のようなスキャン塗布法のほか、中心部から周辺部に
(あるいはその逆)らせん状に薬液を滴下するスパイラ
ル塗布法を用いてもよいし、その他の液膜作成法を用い
てもよい。
As a liquid film forming method, in addition to the scan coating method as in this embodiment, a spiral coating method of spirally dropping a chemical solution from a center portion to a peripheral portion (or vice versa) may be used. Alternatively, another liquid film forming method may be used.

【0043】[第3の実施形態]極細ノズルを被処理基
板上でy方向に速度1m/secで往復運動させるとと
もにx方向に被処理基板を順次移動させ、薬液を線状
(一筆書き状)に滴下し基板全面(φ200mm)に薬
液を滴下することで被処理基板全面にレジストAの液膜
を形成した。
[Third Embodiment] An extremely fine nozzle is reciprocated at a speed of 1 m / sec in the y-direction on the substrate to be processed, and the substrate is sequentially moved in the x-direction. And a chemical solution was dropped on the entire surface of the substrate (φ200 mm) to form a liquid film of the resist A on the entire surface of the substrate to be processed.

【0044】次に、図8に示す乾燥装置を用いて液状膜
の乾燥を行う。図8は、本発明の第3実施形態に係わる
乾燥装置の概略構成を示す図である。図8に示すよう
に、被処理基板101は、チャンバ802内に設置され
た回転整流板(円板)801に対向して、設置される。
チャンバ802は真空ポンプ803に接続され、チャン
バ内の気圧を低下することが可能となっている。
Next, the liquid film is dried using the drying apparatus shown in FIG. FIG. 8 is a diagram illustrating a schematic configuration of a drying device according to the third embodiment of the present invention. As shown in FIG. 8, the substrate to be processed 101 is installed so as to face a rotary rectifying plate (disk) 801 installed in the chamber 802.
The chamber 802 is connected to a vacuum pump 803 so that the pressure in the chamber can be reduced.

【0045】次に、図8に示す乾燥装置を用いた乾燥工
程について説明する。先ず、被処理基板101を整流板
801との距離を5mm設定し、チャンバ802内の圧
力を真空ポンプ803で一定レート(−15Torr/
sec.)で減圧する。次いで、チャンバ802内の圧力
が、溶剤の飽和蒸気圧である約2Torrに達した段階
で、整流板を2000rpmで回転させながら30se
c間維持して溶剤の乾燥を行なった。
Next, a drying process using the drying apparatus shown in FIG. 8 will be described. First, the distance between the substrate 101 to be processed and the rectifying plate 801 is set to 5 mm, and the pressure in the chamber 802 is set at a constant rate (−15 Torr /
sec.). Next, when the pressure in the chamber 802 reaches about 2 Torr, which is the saturated vapor pressure of the solvent, the straightening plate is rotated at 2000 rpm for 30 seconds.
The solvent was dried while maintaining for c.

【0046】次いで、整流板801を被処理基板101
表面から離して、チャンバ802から取り出して、最終
的に被処理基板101上に300nmの厚さのレジスト
Cの塗布膜を形成した。
Next, the current plate 801 is connected to the substrate 101 to be processed.
After being separated from the surface and taken out of the chamber 802, a 300 nm-thick resist C coating film was finally formed on the substrate 101 to be processed.

【0047】従来の減圧乾燥法では、図9に示すよう
に、溶剤の飽和蒸気圧状態において、揮発した溶剤が乱
流となって、液状膜102表面、形成された膜厚の均一
性に問題が生じることがある。
In the conventional vacuum drying method, as shown in FIG. 9, when the solvent is in a saturated vapor pressure state, the volatilized solvent becomes turbulent, and there is a problem in the surface of the liquid film 102 and the uniformity of the formed film thickness. May occur.

【0048】本実施形態では、図10に示すように、層
流状態で溶剤雰囲気を基板周辺部へ排出することで、溶
剤の揮発が飽和蒸気圧時に乱流状態となるのを防ぎ、乱
流によって生じていたムラを低減し、均一な膜厚分布が
得られた。
In the present embodiment, as shown in FIG. 10, the solvent atmosphere is discharged to the periphery of the substrate in a laminar flow state, thereby preventing the solvent from volatilizing in a turbulent state at a saturated vapor pressure. Was reduced, and a uniform film thickness distribution was obtained.

【0049】本実施形態では、開口部がない整流板を用
いたが、これに限るものではなく、第2の実施形態で使
用した複数の孔が開口したものを用いてもよい。また、
本実施形態ではチャンバは真空ポンプと接続される部分
以外密閉構造としたが、整流板に開口部を設ける場合、
チャンバ上部に図11のような気流供給器を設け、チャ
ンバ内に気流を供給しながら処理を行ってもよい。ま
た、整流板と基板との距離や回転数、真空度は使用する
薬液によって適宜変えてよい。最後に、液状膜作成方法
として、本実施形態のようなスキャン塗布法のほか、中
心部から周辺部に(あるいはその逆)らせん状に薬液を
滴下するスパイラル塗布法を用いてもよいし、その他の
液膜作成法を用いてもよい。
In this embodiment, a current plate having no opening is used. However, the present invention is not limited to this, and a current plate having a plurality of holes used in the second embodiment may be used. Also,
In the present embodiment, the chamber has a closed structure except for the portion connected to the vacuum pump, but when an opening is provided in the current plate,
An airflow supply device as shown in FIG. 11 may be provided in the upper part of the chamber, and the processing may be performed while supplying an airflow into the chamber. Further, the distance, the number of rotations, and the degree of vacuum between the current plate and the substrate may be appropriately changed depending on the chemical used. Finally, as a liquid film forming method, in addition to the scan coating method as in the present embodiment, a spiral coating method in which a chemical solution is dropped in a spiral form from a central portion to a peripheral portion (or vice versa) may be used. May be used.

【0050】[第4の実施形態]図12は、本発明の第
4の実施形態に係わる乾燥装置の概略構成を示す図であ
る。図12において、図2と同一な部位には同一符号を
付し、その説明を省略する。先ず、レジスト液膜を形成
した被処理基板の中心軸と整流板の中心軸とが合うよう
に、整流板を20mmの距離で近接させ、3000rp
mで回転を始めた。この時同時に被処理基板も整流板の
回転方向と逆方向に30rpmで回転させ始めた。次
に、同時に整流板の中心軸を被処理基板の外周部に向け
て、10mm/sの速度で移動させた。整流板の中心軸
が被処理基板の外周部に到達すると同時に、整流板の中
心を被処理基板の中止軸側に向けて10mm/sでの速
度で移動させた。このような往復スキャン運動を3回繰
り返すことにより、トータル60秒間、溶剤の乾燥処理
を行い、膜厚300nmのレジスト膜を形成した。
[Fourth Embodiment] FIG. 12 is a diagram showing a schematic configuration of a drying apparatus according to a fourth embodiment of the present invention. 12, the same parts as those in FIG. 2 are denoted by the same reference numerals, and the description thereof will be omitted. First, the rectifying plate is brought close to the rectifying plate at a distance of 20 mm so that the central axis of the substrate to be processed on which the resist liquid film is formed is aligned with the central axis of the rectifying plate.
Started rotation at m. At this time, the substrate to be processed also started to rotate at 30 rpm in the direction opposite to the direction of rotation of the current plate. Next, at the same time, the central axis of the current plate was moved at a speed of 10 mm / s toward the outer peripheral portion of the substrate to be processed. At the same time when the central axis of the current plate reached the outer peripheral portion of the substrate, the center of the current plate was moved at a speed of 10 mm / s toward the stop axis side of the substrate. By repeating such a reciprocating scan motion three times, the solvent was dried for a total of 60 seconds to form a resist film having a thickness of 300 nm.

【0051】本実施形態では、第1の実施形態と違い、
気流の流れは常に下向きとなるが、整流板と被処理基板
とを相対運動させることにより溶剤の乾燥が基板全面で
均一になった。
In this embodiment, unlike the first embodiment,
Although the flow of the airflow always turned downward, the solvent was dried uniformly over the entire surface of the substrate by relatively moving the current plate and the substrate to be processed.

【0052】整流板の中心軸と被処理基板の中心軸とを
オフセットさせることにより、特異点を防ぎ、膜厚の均
一性を向上させることができる。また、オフセットの量
を時間的に変動させることで膜厚の均一性をさらに向上
させることができる。また、被処理基板も回転させるこ
とによって、乾燥効率を向上させることができる。
By offsetting the central axis of the current plate and the central axis of the substrate to be processed, a singular point can be prevented and the uniformity of the film thickness can be improved. Further, the uniformity of the film thickness can be further improved by changing the amount of the offset with time. The drying efficiency can be improved by rotating the substrate to be processed.

【0053】本実施形態における液状膜乾燥方法におい
ては、整流板側を移動させたが、被処理基板側を移動さ
せても良いし、整流板と被処理基板との両方を移動させ
ても良い。また、整流板の回転数、距離も300rp
m、20mmに限るものではなく、使用する薬液によっ
て適宜設定して良い。また、場合によってはオフセット
の量を変動させず、オフセット量を一定にしても良い。
液状膜作成方法として、本実施形態のようなスキャン塗
布法のほか、中心部から周辺部に(あるいはその逆)ら
せん状に薬液を滴下するスパイラル塗布法を用いてもよ
いし、その他の液膜作成法を用いてもよい。
In the liquid film drying method of the present embodiment, the current plate side is moved, but the substrate to be processed may be moved, or both the current plate and the substrate may be moved. . In addition, the rotation speed and distance of the current plate are also 300 rpm.
It is not limited to m and 20 mm, but may be set as appropriate depending on the chemical used. In some cases, the offset amount may be constant without changing the offset amount.
As the liquid film forming method, in addition to the scan coating method as in the present embodiment, a spiral coating method in which a chemical solution is dropped in a spiral form from a central portion to a peripheral portion (or vice versa) may be used. A creation method may be used.

【0054】なお、本発明は、上記実施形態に限定され
るものではない。例えば、本発明の趣旨に反しない限
り、液膜自体が基板外に振りとばされない範囲で、整流
板の回転数は500〜4000rpmの範囲、基板と整
流板との距離は5〜30mmの範囲で用いることができ
る。その他、本発明は、その要旨を逸脱しない範囲で、
種々変形して実施することが可能である。
The present invention is not limited to the above embodiment. For example, the rotation speed of the current plate is in the range of 500 to 4000 rpm, and the distance between the substrate and the current plate is in the range of 5 to 30 mm as long as the liquid film itself is not sprinkled out of the substrate unless it is contrary to the gist of the present invention. Can be used. In addition, the present invention does not depart from the gist thereof,
Various modifications can be made.

【0055】[0055]

【発明の効果】以上説明したように本発明によれば、整
流板を被処理基板上で高速回転させることで基板上に均
一な気流の流れを発生させることで、均一に乾燥させる
ことができ、速やかに均一な塗布膜を作成することがで
きる。
As described above, according to the present invention, the rectifying plate is rotated at a high speed on the substrate to be processed to generate a uniform flow of air on the substrate, thereby enabling uniform drying. Thus, a uniform coating film can be quickly formed.

【図面の簡単な説明】[Brief description of the drawings]

【図1】第1の実施形態に係わる液状膜の形成方法を説
明する模式図。
FIG. 1 is a schematic view illustrating a method for forming a liquid film according to a first embodiment.

【図2】第1の実施形態に係わる液状膜乾燥装置の概略
構成を示す図。
FIG. 2 is a diagram showing a schematic configuration of a liquid film drying device according to the first embodiment.

【図3】図2に示す液状膜乾燥装置を用いた乾燥方法を
説明するための図。
FIG. 3 is a view for explaining a drying method using the liquid film drying apparatus shown in FIG. 2;

【図4】図2に示す液状膜乾燥装置を用いた乾燥方法を
説明するための図。
FIG. 4 is a view for explaining a drying method using the liquid film drying apparatus shown in FIG. 2;

【図5】図2に示す液状膜乾燥装置を用いた乾燥方法を
説明するための図。
FIG. 5 is a view for explaining a drying method using the liquid film drying apparatus shown in FIG. 2;

【図6】第2の実施形態に係わる液状膜乾燥装置の概略
構成を示す図。
FIG. 6 is a diagram showing a schematic configuration of a liquid film drying apparatus according to a second embodiment.

【図7】図6に示す液状膜乾燥装置を用いた乾燥方法を
説明するための図。
FIG. 7 is a view for explaining a drying method using the liquid film drying apparatus shown in FIG. 6;

【図8】第3の実施形態に係わる液状膜乾燥装置の概略
構成を示す図。
FIG. 8 is a diagram showing a schematic configuration of a liquid film drying apparatus according to a third embodiment.

【図9】従来の減圧乾燥方法における問題点を説明する
図。
FIG. 9 is a diagram illustrating a problem in a conventional reduced-pressure drying method.

【図10】図8に示す液状膜乾燥装置を用いた乾燥方法
を説明するための図。
FIG. 10 is a view for explaining a drying method using the liquid film drying apparatus shown in FIG.

【図11】第3実施形態に係わる液状膜乾燥装置の変形
例の概略構成を示す図。
FIG. 11 is a diagram showing a schematic configuration of a modification of the liquid film drying device according to the third embodiment.

【図12】第4の実施形態に係わる乾燥方法を説明する
ための図。
FIG. 12 is a view for explaining a drying method according to a fourth embodiment.

【符号の説明】[Explanation of symbols]

101…被処理基板 102…液状膜 110…薬液吐出ノズル 200…整流板 201…第1の円板 202…第2の円板 203…回転駆動部 204…気流導入口 205…気流コンダクタンス制御板 DESCRIPTION OF SYMBOLS 101 ... Substrate to be processed 102 ... Liquid film 110 ... Chemical liquid discharge nozzle 200 ... Rectifier plate 201 ... First circular plate 202 ... Second circular plate 203 ... Rotation drive unit 204 ... Air flow inlet 205 ... Air flow conductance control plate

───────────────────────────────────────────────────── フロントページの続き (72)発明者 奥村 勝弥 神奈川県川崎市幸区小向東芝町1番地 株 式会社東芝マイクロエレクトロニクスセン ター内 Fターム(参考) 2H096 AA00 AA25 AA27 CA12 DA10 JA02 3L113 AA01 AB01 AC34 BA34 CB15 CB28 CB34 DA04 5F046 JA01 JA07 JA08 KA10  ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Katsuya Okumura 1-Front Term, Komukai Toshiba-cho, Saiwai-ku, Kawasaki-shi, Kanagawa F-term (reference) 2H096 AA00 AA25 AA27 CA12 DA10 JA02 3L113 AA01 AB01 AC34 BA34 CB15 CB28 CB34 DA04 5F046 JA01 JA07 JA08 KA10

Claims (12)

【特許請求の範囲】[Claims] 【請求項1】被処理基板上に形成された溶質を含む液状
膜中の溶媒を除去する液状膜乾燥方法において、 一つ以上の貫通孔を有する整流板を該被処理基板上に前
記液状膜に接触しない距離で近接させる工程と、 前記整流板を回転させて該被処理基板上と該整流板下面
との間に気流を生じさせる工程と、 前記気流に液状膜を接触させて前記液状膜中の溶剤を除
去し、前記被処理基板上に前記溶質からなる固相膜を形
成する工程とを含むことを特徴とする液状膜乾燥方法。
1. A liquid film drying method for removing a solvent in a liquid film containing a solute formed on a substrate to be processed, wherein a rectifying plate having one or more through holes is provided on the substrate to be processed. A step of bringing the liquid film into contact with the air flow, a step of rotating the rectifier plate to generate an airflow between the substrate to be processed and the lower surface of the rectifier plate, and a step of bringing a liquid film into contact with the airflow. Removing the solvent therein to form a solid phase film made of the solute on the substrate to be processed.
【請求項2】前記被処理基板と前記整流板下面との間へ
の気流の導入が、 前記整流板の回転により、前記被処理基板と前記整流板
下面との間で生じる圧力差を利用して行なわれることを
特徴とする請求項1に記載の液状膜乾燥方法。
2. The method according to claim 1, wherein the introduction of the airflow between the substrate to be processed and the lower surface of the rectifier plate utilizes a pressure difference generated between the substrate to be processed and the lower surface of the rectifier plate due to the rotation of the rectifier plate. 2. The method for drying a liquid film according to claim 1, wherein the drying is performed.
【請求項3】前記被処理基板上と前記整流板下面との間
に生じる気流の向きを時間的に変化させることを特徴と
する請求項1に記載の液状膜乾燥方法。
3. The liquid film drying method according to claim 1, wherein a direction of an air flow generated between the substrate to be processed and the lower surface of the current plate is changed with time.
【請求項4】前記被処理基板と前記整流板下面との間の
圧力と、前記整流板上面での圧力との差を変化させて、 前記被処理基板上と前記整流板下面との間に生じる気流
の向きを時間的に変化させることを特徴とする請求項3
に記載の液状膜乾燥方法。
4. The method according to claim 1, wherein a difference between a pressure between the substrate to be processed and the lower surface of the rectifier plate and a pressure on the upper surface of the rectifier plate is changed to provide a space between the substrate to be processed and the lower surface of the rectifier plate. The direction of the generated airflow is changed with time.
3. The method for drying a liquid film according to item 1.
【請求項5】前記整流板の中心軸と前記被処理基板の中
心とを異ならせることを特徴とする請求項1に記載の液
状膜乾燥方法。
5. The method according to claim 1, wherein a center axis of the rectifying plate and a center of the substrate to be processed are made different.
【請求項6】前記異ならせる量を時間的に変動させるこ
とを特徴とする請求項5に記載の液状膜乾燥方法。
6. The method for drying a liquid film according to claim 5, wherein the different amount is changed over time.
【請求項7】前記整流板の回転方向と逆の方向に前記被
処理基板を回転させることを特徴とする請求項5に記載
の液状膜乾燥方法。
7. The liquid film drying method according to claim 5, wherein the substrate to be processed is rotated in a direction opposite to a rotation direction of the current plate.
【請求項8】被処理基板上に形成された溶質を含む液状
膜中の溶媒を除去する液状膜乾燥方法において、 整流板を該被処理基板直上に前記液状膜に接触しない距
離で近接させる工程と、 前記整流版と前記被処理基板間及び周囲を減圧状態に維
持する工程と、 前記整流板を回転させて前記被処理基板上と該整流板下
面の間に気流を生じさせる工程と、 前記気流に前記液状膜を接触させて液状膜中の溶剤を除
去し、前記被処理基板上に前記溶質からなる固相膜を形
成する工程とを含むことを特徴とする液状膜乾燥方法。
8. A liquid film drying method for removing a solvent in a liquid film containing a solute formed on a substrate to be processed, wherein a rectifying plate is brought directly above the substrate to be processed at a distance that does not make contact with the liquid film. A step of maintaining a reduced pressure between and around the rectifying plate and the substrate to be processed, a step of rotating the rectifying plate to generate an airflow between the substrate to be processed and the lower surface of the rectifying plate, Contacting the liquid film with an air stream to remove a solvent in the liquid film, and forming a solid-phase film made of the solute on the substrate to be processed.
【請求項9】表面に溶媒を含む液状膜が形成された被処
理基板に対向配置され、一つ以上の貫通孔を有する整流
板と、 この整流板を回転させる回転駆動部と、 前記被処理基板の反対側の前記整流板の貫通孔の開口部
側に対向配置された気流制御板と、 前記整流板と前記被処理基板の距離と前記整流板と前記
気流制御板の距離とを相対的に変化させる上下方向駆動
部とを具備してなることを特徴とする液状膜乾燥装置。
9. A rectifying plate having at least one through-hole disposed opposite to a substrate to be processed having a liquid film containing a solvent formed on a surface thereof; a rotation drive unit for rotating the rectifying plate; An airflow control plate facing the opening side of the through hole of the rectifier plate on the opposite side of the substrate; a distance between the rectifier plate and the substrate to be processed; and a distance between the rectifier plate and the airflow control plate. A liquid film drying apparatus, comprising: a vertical driving unit that changes the pressure in the liquid film.
【請求項10】表面に溶媒を含む液状膜が形成された被
処理基板に対向配置され、一つ以上の貫通孔を有する整
流板と、 この整流板を回転させる回転駆動部と、 前記貫通孔に対して気流を供給する外部気流発生器とを
具備してなることを特徴とする液状膜乾燥装置。
10. A rectifier plate having at least one through-hole disposed opposite to a substrate on which a liquid film containing a solvent is formed on a surface thereof, a rotation drive unit for rotating the rectifier plate, and the through-hole. And an external airflow generator for supplying an airflow to the liquid film drying apparatus.
【請求項11】前記被処理基板及び整流板が内部に収納
される減圧チャンバと、 前記減圧チャンバに接続され、該チャンバ内を排気する
真空ポンプとをさらに具備してなることを特徴とする請
求項9又は10に記載の液状膜乾燥装置。
11. The apparatus according to claim 1, further comprising a decompression chamber in which the substrate to be processed and the rectifying plate are housed, and a vacuum pump connected to the decompression chamber and evacuating the chamber. Item 11. The liquid film drying device according to item 9 or 10.
【請求項12】前記整流板には複数の貫通孔があって、 各貫通孔が回転時に被処理基板上の任意の部分で時間的
にほぼ同じ割合で通過するように配置されていることを
特徴とする請求項9又は12に記載の液状膜乾燥装置。
12. The rectifying plate has a plurality of through-holes, and the through-holes are arranged so as to pass at substantially the same time rate at an arbitrary portion on the substrate to be processed during rotation. The liquid film drying device according to claim 9 or 12, wherein
JP2000296089A 2000-09-27 2000-09-28 Liquid film drying method and device thereof Pending JP2002110513A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000296089A JP2002110513A (en) 2000-09-28 2000-09-28 Liquid film drying method and device thereof
TW90122870A TW516084B (en) 2000-09-28 2001-09-14 Liquid film drying method and device thereof
CN 01140672 CN1201375C (en) 2000-09-28 2001-09-20 Liquid state film drying method and device
US09/961,288 US6709699B2 (en) 2000-09-27 2001-09-25 Film-forming method, film-forming apparatus and liquid film drying apparatus
US10/736,580 US20040126501A1 (en) 2000-09-27 2003-12-17 Film-forming method, film-forming apparatus and liquid film drying apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000296089A JP2002110513A (en) 2000-09-28 2000-09-28 Liquid film drying method and device thereof

Publications (1)

Publication Number Publication Date
JP2002110513A true JP2002110513A (en) 2002-04-12

Family

ID=18778415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000296089A Pending JP2002110513A (en) 2000-09-27 2000-09-28 Liquid film drying method and device thereof

Country Status (3)

Country Link
JP (1) JP2002110513A (en)
CN (1) CN1201375C (en)
TW (1) TW516084B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004095726A (en) * 2002-08-30 2004-03-25 Ckd Corp Method and apparatus for forming liquid film
JP2015009180A (en) * 2013-06-27 2015-01-19 東京エレクトロン株式会社 Coating film formation device, coating film formation method and recording medium
JP2015026792A (en) * 2013-07-29 2015-02-05 東京エレクトロン株式会社 Coating film forming apparatus, coating film forming method and storage medium

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CN105177528B (en) * 2015-07-10 2018-01-09 京东方科技集团股份有限公司 A kind of vacuum decompression device
CN107081231A (en) * 2017-05-26 2017-08-22 浦江之音科技有限公司 A kind of Multi-functional paint spraying equipment
CN109786587A (en) * 2019-03-22 2019-05-21 纳晶科技股份有限公司 A kind of film production device and technique
CN111540846A (en) * 2019-05-08 2020-08-14 广东聚华印刷显示技术有限公司 Reduced pressure drying device and reduced pressure drying method
CN114963742A (en) * 2021-06-29 2022-08-30 南昌工学院 Air uniform heating equipment for heating based on lacquer

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Publication number Priority date Publication date Assignee Title
JP2004095726A (en) * 2002-08-30 2004-03-25 Ckd Corp Method and apparatus for forming liquid film
JP2015009180A (en) * 2013-06-27 2015-01-19 東京エレクトロン株式会社 Coating film formation device, coating film formation method and recording medium
JP2015026792A (en) * 2013-07-29 2015-02-05 東京エレクトロン株式会社 Coating film forming apparatus, coating film forming method and storage medium

Also Published As

Publication number Publication date
CN1347136A (en) 2002-05-01
CN1201375C (en) 2005-05-11
TW516084B (en) 2003-01-01

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