JP2003318091A - Heat treatment device and heat treatment method - Google Patents
Heat treatment device and heat treatment methodInfo
- Publication number
- JP2003318091A JP2003318091A JP2002122401A JP2002122401A JP2003318091A JP 2003318091 A JP2003318091 A JP 2003318091A JP 2002122401 A JP2002122401 A JP 2002122401A JP 2002122401 A JP2002122401 A JP 2002122401A JP 2003318091 A JP2003318091 A JP 2003318091A
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- substrate
- plate
- lid
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は,基板の熱処理装置
及び熱処理方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate heat treatment apparatus and a heat treatment method.
【0002】[0002]
【従来の技術】半導体デバイスの製造におけるフォトリ
ソグラフィー工程では,ウエハの表面に塗布されたレジ
スト液内の溶剤を蒸発させるための加熱処理(プリベー
キング),パターンの露光後に,ウェハ上の塗布膜の化
学反応を促進させるための加熱処理(ポストエクスポー
ジャーベーキング),現像処理後の加熱処理(ポストベ
ーキング)等の種々の加熱処理が行われている。2. Description of the Related Art In a photolithography process in the manufacture of semiconductor devices, a heating process (prebaking) for evaporating a solvent in a resist solution applied to the surface of a wafer, a pattern exposure, and a coating film on the wafer are removed. Various heat treatments such as heat treatment for promoting a chemical reaction (post-exposure baking) and heat treatment after development (post-baking) are performed.
【0003】上述の加熱処理は,加熱処理装置で行わ
れ,この加熱処理装置は,通常図17に示すようにウェ
ハWを載置し加熱する円盤状の熱板200と,熱板20
0の外周部を支持するサポートリング201,サポート
リング201と一体となって処理室Sを形成する蓋体2
02等で主に構成されている。蓋体202の中央部に
は,処理室S内にパージ用のガスを供給する供給口20
3が設けられている。また,熱板200の外方に位置す
るサポートリング201の上面には,処理室S内の雰囲
気を排気する複数の排気口204が設けられている。The above-mentioned heat treatment is carried out by a heat treatment apparatus. This heat treatment apparatus normally has a disk-shaped heat plate 200 on which a wafer W is placed and heated as shown in FIG. 17, and a heat plate 20.
Support ring 201 that supports the outer peripheral portion of 0, and the lid 2 that forms the processing chamber S integrally with the support ring 201
02 and so on. A supply port 20 for supplying a purging gas into the processing chamber S is provided at the center of the lid 202.
3 is provided. Further, a plurality of exhaust ports 204 for exhausting the atmosphere in the processing chamber S are provided on the upper surface of the support ring 201 located outside the heat plate 200.
【0004】そして,加熱処理時には,蓋体202とサ
ポートリング201によって形成された処理室S内にお
いて,ウェハWが熱板200上に載置されて加熱され
る。また,加熱処理中は,蓋体202の供給口203か
ら処理室S内にガスが供給され,処理室S内を通過した
ガスがサポートリング201の各排気口204から排気
される。このため,処理室S内には,処理室S上部から
下降し,ウェハW表面上を径方向に進んで,ウェハWの
外縁部付近を通過し,ウェハWの下方に流れ込む気流が
形成されていた。During the heating process, the wafer W is placed on the heating plate 200 and heated in the processing chamber S formed by the lid 202 and the support ring 201. Further, during the heating process, gas is supplied into the processing chamber S from the supply port 203 of the lid 202, and the gas that has passed through the processing chamber S is exhausted from each exhaust port 204 of the support ring 201. Therefore, in the processing chamber S, there is formed an air flow that descends from the upper part of the processing chamber S, advances on the surface of the wafer W in the radial direction, passes near the outer edge of the wafer W, and flows into the lower part of the wafer W. It was
【0005】[0005]
【発明が解決しようとする課題】上述したような従来の
加熱処理装置では,処理室S内を流れる気流がウェハW
の外縁部付近や排気口204付近で急激に圧力損失する
ので,当該ウェハW外縁部付近で気流が乱れ,所々で渦
やよどみ等が発生する。このため,ウェハW外縁部上を
流れる気流は,不安定であり,例えば気流の流速,方
向,圧力等がウェハ外縁部面内において不均一になる。
このように,ウェハ外縁部の気流が不均一になると,例
えばプリベーキングの場合,ウェハ外縁部における溶剤
の揮発量が不均一になり,ウェハ外縁部のレジスト膜が
凸凹に形成される。また,ポストエクスポージャーベー
キングの場合,ウェハ外縁部における化学反応の速度が
不均一になり,例えばレジスト膜の現像液に対する溶解
性が場所によって異なってくる。In the conventional heat treatment apparatus as described above, the airflow flowing in the treatment chamber S causes the wafer W to flow.
Since the pressure is rapidly lost near the outer edge of the wafer W and near the exhaust port 204, the air flow is disturbed near the outer edge of the wafer W, and vortices and stagnation occur in places. For this reason, the airflow flowing over the outer edge of the wafer W is unstable, and, for example, the flow velocity, direction, pressure, etc. of the airflow are non-uniform within the surface of the outer edge of the wafer.
When the air flow at the outer edge of the wafer becomes non-uniform in this way, for example, in the case of pre-baking, the amount of solvent volatilized at the outer edge of the wafer becomes uneven, and the resist film on the outer edge of the wafer is uneven. Further, in the case of post-exposure baking, the rate of chemical reaction at the outer edge of the wafer becomes non-uniform, and, for example, the solubility of the resist film in the developing solution varies depending on the location.
【0006】このようにウェハ外縁部において,不均一
な処理が行われると,例えば最終的に形成される回路パ
ターンの線幅等にもばらつきが生じて,品質のばらつき
を招く。このような品質のばらつきは,G/W歩留まり
(ウェハ面内における良品チップの割合)の低下を招き
好ましくない。また,従来から,ウェハ外縁部のカット
幅(製品として用いることができず,カットされる部分
の幅)の狭小化が望まれており,ウェハ外縁部における
均一な処理は,カット幅の狭小化にも繋がる。When the non-uniform processing is performed on the outer edge portion of the wafer as described above, for example, the line width of the finally formed circuit pattern also varies, resulting in variation in quality. Such a variation in quality leads to a decrease in G / W yield (ratio of non-defective chips in the wafer surface), which is not preferable. Further, conventionally, it has been desired to reduce the cut width of the outer edge portion of the wafer (the width of the portion that cannot be used as a product and is cut), and uniform processing at the outer edge portion of the wafer requires narrowing of the cut width. Also leads to.
【0007】本発明は,かかる点に鑑みてなされたもの
であり,加熱処理等の熱処理において,ウェハ等の基板
の外縁部付近に不安定な気流が形成されることを防止
し,基板外縁部における適正な熱処理を実現する熱処理
装置及び熱処理方法を提供することをその目的とする。The present invention has been made in view of the above points, and prevents an unstable air flow from being formed in the vicinity of the outer edge portion of a substrate such as a wafer during heat treatment such as heat treatment, thereby preventing the outer edge portion of the substrate from being formed. It is an object of the present invention to provide a heat treatment apparatus and a heat treatment method that realize proper heat treatment in the above.
【0008】[0008]
【課題を解決するための手段】請求項1の発明によれ
ば,処理室内で基板を熱処理する熱処理装置であって,
基板を載置し熱処理する熱処理板と,この熱処理板を上
方から覆い,処理室の一部を形成する蓋体と,を備え,
前記蓋体は,上面部と側部を有し下面側が開口した略筒
状の形態を有し,前記上面部は,前記熱処理板上の基板
に対向し,前記上面部には,処理室内に気体を供給する
供給口が設けられ,前記蓋体の側部であって前記熱処理
板上の基板よりも高い位置には,前記処理室内の気体を
排気するための排気口が設けられていることを特徴とす
る熱処理装置が提供される。According to the invention of claim 1, there is provided a heat treatment apparatus for heat treating a substrate in a processing chamber,
A heat treatment plate on which the substrate is placed and heat treated; and a lid which covers the heat treatment plate from above and forms a part of the processing chamber,
The lid has a substantially cylindrical shape having an upper surface portion and side portions and an opening on the lower surface side, the upper surface portion faces a substrate on the heat treatment plate, and the upper surface portion is provided in a processing chamber. A supply port for supplying a gas is provided, and an exhaust port for exhausting the gas in the processing chamber is provided at a side portion of the lid and higher than the substrate on the heat treatment plate. A heat treatment apparatus is provided.
【0009】この熱処理装置によれば,蓋体の上方から
導入された気体が,基板の載置位置より高い位置の排気
口から排気されるので,従来のように気流が基板外縁部
付近を通過し基板下方に流れることがない。したがっ
て,基板外縁部表面付近に不安定で不均一な気流が流れ
ることがなく,熱処理が基板外縁部面内においても均一
に行われる。According to this heat treatment apparatus, the gas introduced from above the lid is exhausted from the exhaust port at a position higher than the mounting position of the substrate, so that the air flow passes near the outer edge of the substrate as in the conventional case. It does not flow below the substrate. Therefore, an unstable and non-uniform air flow does not flow near the surface of the outer edge of the substrate, and the heat treatment is uniformly performed within the surface of the outer edge of the substrate.
【0010】前記蓋体は,前記排気口に通じ,前記蓋体
の側部内を通る排気通路と,前記排気通路を通過した気
体中の不純物を回収する不純物回収部と,を備えていて
もよい。かかる場合,処理室内に供給された気体は,排
気口から蓋体の側部内に流入し,排気通路を通り,その
後不純物回収部によって不純物が回収されてから排出さ
れる。したがって,処理室内の雰囲気排気を好適に行う
ことができる。また,蓋体に,排気通路と不純物回収部
が備えられているので,排気管等を別途設ける必要がな
く,装置の排気系統を単純化できる。さらに,例えば装
置本体から蓋体を取り外すことによって,排気系統も一
緒に取り外せるので,メンテナンスが容易になる。The lid may be provided with an exhaust passage communicating with the exhaust port and passing through a side portion of the lid, and an impurity recovery unit for recovering impurities in the gas passing through the exhaust passage. . In such a case, the gas supplied into the processing chamber flows from the exhaust port into the side portion of the lid body, passes through the exhaust passage, and is then discharged after the impurities are collected by the impurity collecting unit. Therefore, the atmosphere in the processing chamber can be appropriately exhausted. Further, since the lid body is provided with the exhaust passage and the impurity recovery unit, it is not necessary to separately provide an exhaust pipe or the like, and the exhaust system of the device can be simplified. Furthermore, since the exhaust system can be removed together by removing the lid from the apparatus body, for example, maintenance becomes easy.
【0011】前記蓋体の側部は,内周壁と外周壁とを有
し,前記内周壁と外周壁との間には,隙間が形成されて
おり,当該隙間が,前記排気通路になっていてもよい。
また,前記内周壁と外周壁は,互いに取り外し自在であ
り,少なくとも内周壁又は外周壁を取り外すことによっ
て,前記排気通路が露出可能であってもよい。かかる場
合,排気通路の洗浄等のメンテナンスをより簡単に行う
ことができる。特に排気通路は,基板から発生した揮発
物等で汚れやすく,頻繁にメンテナンスが必要なので,
その効果は大きい。The side portion of the lid has an inner peripheral wall and an outer peripheral wall, and a gap is formed between the inner peripheral wall and the outer peripheral wall, and the gap serves as the exhaust passage. May be.
The inner peripheral wall and the outer peripheral wall may be removable from each other, and the exhaust passage may be exposed by removing at least the inner peripheral wall or the outer peripheral wall. In such a case, maintenance such as cleaning of the exhaust passage can be performed more easily. In particular, the exhaust passage is easily contaminated with volatile substances generated from the board, and frequent maintenance is required.
The effect is great.
【0012】前記排気通路には,排気用整流板が設けら
れており,前記排気用整流板には,気体が通過する通気
孔が設けられていてもよい。この排気用整流板によっ
て,排気口から流入した気体を適切に不純物回収部に導
くことができる。また,例えば排気通路の下流の一箇所
で印加された排気圧力を,排気用整流板で圧損すること
ができ,上流の前記排気口における排気圧を調整でき
る。したがって,排気口からの排気圧を調節して,処理
室内の気体を均等に排気することができる。前記排気用
整流板は,前記排気通路に沿って複数設けられ,前記排
気用整流板の通気孔による開口率は,上流側に近づくに
つれて高くなっていてもよい。かかる場合,例えば排気
通路の下流の一箇所にかかる排気圧力を上流側に近づく
につれて徐々に分散させ,排気口からの気体の排気を基
板周りにおいて均等に行うことができる。The exhaust passage may be provided with an exhaust rectifying plate, and the exhaust rectifying plate may be provided with a vent hole through which gas passes. The gas flowing from the exhaust port can be appropriately guided to the impurity recovery unit by the exhaust rectifying plate. Further, for example, the exhaust pressure applied at one location on the downstream side of the exhaust passage can be lost by the exhaust rectifying plate, and the exhaust pressure at the upstream exhaust port can be adjusted. Therefore, the gas pressure in the processing chamber can be uniformly exhausted by adjusting the exhaust pressure from the exhaust port. A plurality of the exhaust flow straightening plates may be provided along the exhaust passage, and an opening ratio of the exhaust flow straightening plates due to the ventilation holes may be increased as approaching the upstream side. In this case, for example, the exhaust pressure applied to one location on the downstream side of the exhaust passage is gradually dispersed as it approaches the upstream side, and the gas can be exhausted from the exhaust port uniformly around the substrate.
【0013】前記蓋体の内側であって前記上面部と前記
熱処理板上の基板との間には,当該基板に対向する整流
板が設けられており,前記整流板は,複数の通気孔を有
し,前記整流板の通気孔は,前記上面部側から流入した
気体が鉛直下方向よりも径方向に沿って基板の外方側に
向いて流出するように斜めに形成されていてもよい。A rectifying plate facing the substrate is provided inside the lid and between the upper surface portion and the substrate on the heat treatment plate, and the rectifying plate has a plurality of ventilation holes. The ventilation hole of the straightening vane may be formed obliquely so that the gas flowing in from the upper surface side may flow out toward the outer side of the substrate along the radial direction rather than the vertically downward direction. .
【0014】この熱処理装置によれば,上面部の供給か
ら導入され,整流板を通過した気体が,基板の外方向側
に向かって流れるようになる。したがって,蓋体の側部
方向に向かって気体が流れることになり,当該気体が排
気口にスムーズに流れ込むと共に,基板上の外縁部付近
に気流が形成されることをより確実に防止できる。According to this heat treatment apparatus, the gas introduced from the supply of the upper surface and passing through the current plate flows toward the outer side of the substrate. Therefore, the gas flows in the side direction of the lid, the gas smoothly flows into the exhaust port, and it is possible to more reliably prevent the airflow from being formed in the vicinity of the outer edge of the substrate.
【0015】前記蓋体の内側であって前記上面部と前記
熱処理板上の基板との間には,前記基板に対向する整流
板が設けられており,前記整流板には,複数の通気孔が
設けられており,前記整流板の通気孔の出口には,通過
した気体を鉛直下方向よりも径方向に沿って基板の外方
向側に向けて流すガイド部材が取り付けられていてもよ
い。かかる場合も,整流板を通過した気体が蓋体の側部
方向に流れるので,気体の排気を好適に行うことがで
き,また,基板外縁部付近に気流が形成されることも防
止できる。A rectifying plate facing the substrate is provided inside the lid and between the upper surface portion and the substrate on the heat treatment plate, and the rectifying plate has a plurality of ventilation holes. May be provided, and a guide member may be attached to the outlet of the ventilation hole of the straightening vane to flow the passing gas toward the outer side of the substrate along the radial direction rather than the vertically downward direction. Even in such a case, the gas that has passed through the rectifying plate flows in the lateral direction of the lid, so that the gas can be suitably exhausted, and the formation of an air flow near the outer edge of the substrate can be prevented.
【0016】請求項9の発明によれば,処理室内で基板
を熱処理する熱処理装置であって,基板を載置し熱処理
する熱処理板と,この熱処理板を上方から覆い,処理室
の一部を形成する蓋体と,を備え,前記蓋体は,上面部
と側部を有し下面側が開口した略筒状の形態を有し,前
記上面部は,前記熱処理板上の基板に対向し,前記上面
部には,処理室内に気体を供給する供給口が設けられ,
前記蓋体の内側であって前記上面部と前記熱処理板上の
基板との間には,前記基板に対向する整流板が設けられ
ており,前記整流板には,通気孔が設けられており,前
記通気孔は,前記整流板の中央部側から外縁部側に近づ
くにつれて整流板の開口率が高くなるように設けられて
いることを特徴とする熱処理装置が提供される。According to a ninth aspect of the present invention, there is provided a heat treatment apparatus for heat-treating a substrate in a processing chamber, wherein a heat treatment plate on which a substrate is placed and heat treatment is performed, and the heat treatment plate is covered from above to cover a part of the treatment chamber. And a lid body to be formed, wherein the lid body has a substantially cylindrical shape having an upper surface portion and side portions and an opening on the lower surface side, the upper surface portion facing a substrate on the heat treatment plate, The upper surface is provided with a supply port for supplying gas into the processing chamber,
A rectifying plate facing the substrate is provided inside the lid and between the upper surface portion and the substrate on the heat treatment plate, and the rectifying plate is provided with a vent hole. The heat treatment apparatus is provided in which the vent hole is provided so that the opening ratio of the straightening vane increases from the central portion side of the straightening vane toward the outer edge portion side.
【0017】この熱処理装置によれば,処理室上方の前
記供給口から供給された気体が整流板を通って基板上に
供給される。このとき,整流板の外縁部に近づくにつれ
通気孔による開口率が高くなっているので,整流板の外
縁部に対向する基板の外縁部付近には,多量の気体が満
遍なく供給される。したがって,基板全面の熱処理が適
切に行われる。なお,前記整流板には,同一径の通気孔
が複数設けられ,前記通気孔は,前記整流板の中央部側
から外縁部側に近づくにつれてより多く設けられていて
もよい。According to this heat treatment apparatus, the gas supplied from the supply port above the processing chamber is supplied onto the substrate through the straightening plate. At this time, since the opening ratio of the ventilation holes becomes higher toward the outer edge of the straightening vane, a large amount of gas is evenly supplied near the outer edge of the substrate facing the outer edge of the straightening vane. Therefore, the heat treatment of the entire surface of the substrate is properly performed. It should be noted that a plurality of vent holes having the same diameter may be provided in the straightening vane, and the vent holes may be provided in larger numbers from the central portion side of the straightening vane toward the outer edge portion side.
【0018】請求項11の発明によれば,処理室内で基
板を熱処理する熱処理装置であって,基板を載置し熱処
理する熱処理板と,この熱処理板を上方から覆い,処理
室の一部を形成する蓋体と,を備え,前記蓋体は,上面
部と側部を有し下面側が開口した略筒状の形態を有し,
前記上面部は,前記熱処理板上の基板に対向し,前記上
面部には,処理室内に気体を供給する供給口が設けら
れ,前記蓋体の内側であって前記上面部と前記熱処理板
上の基板との間には,前記基板に対向する整流板が設け
られており,前記整流板は,通気孔を有し,前記通気孔
は,前記上面部側から流入した気体が鉛直下方向よりも
基板の外縁部側に向いて流出するように斜めに形成され
ていることを特徴とする熱処理装置が提供される。According to the eleventh aspect of the present invention, there is provided a heat treatment apparatus for heat-treating a substrate in a processing chamber, wherein a heat treatment plate on which a substrate is placed and heat treatment is performed, and the heat treatment plate is covered from above to cover a part of the treatment chamber. A lid body to be formed, and the lid body has a substantially cylindrical shape having an upper surface portion and side portions and an opening on a lower surface side,
The upper surface portion faces a substrate on the heat treatment plate, and the upper surface portion is provided with a supply port for supplying gas into the processing chamber. A rectifying plate facing the substrate is provided between the rectifying plate and the substrate, and the rectifying plate has a vent hole, and the vent hole allows the gas flowing in from the upper surface side from a vertically downward direction. Also provided is a heat treatment apparatus characterized in that it is also formed obliquely so as to flow out toward the outer edge of the substrate.
【0019】このように,前記蓋体の上面部から流入し
た気体を,整流板によって基板の外縁部側に向けて供給
することによって,基板外縁部に,多量気体が均等に供
給され,基板全面の処理が均一に行われる。As described above, by supplying the gas flowing in from the upper surface of the lid toward the outer edge of the substrate by the straightening plate, a large amount of gas is evenly supplied to the outer edge of the substrate, and the entire surface of the substrate is covered. Is uniformly processed.
【0020】前記整流板の少なくとも基板との対向面に
は,鏡面化処理,表面エネルギーを低下させる処理若し
くは,親水化処理が施されていてもよい。整流板にかか
る処理を施すことによって,処理室内で発生した昇華物
等の不純物が整流板の表面に付着しにくくなる。したが
って,不純物は,排気口から適切に排気される。また,
整流板のメンテナンスが容易になる。At least the surface of the rectifying plate facing the substrate may be subjected to a mirroring treatment, a treatment for reducing the surface energy, or a hydrophilic treatment. Impurities such as sublimates generated in the processing chamber are less likely to adhere to the surface of the straightening vane by performing the treatment on the straightening vane. Therefore, the impurities are appropriately exhausted from the exhaust port. Also,
Maintenance of the current plate becomes easy.
【0021】請求項15の発明によれば,処理室内で基
板を熱処理する熱処理装置であって,基板を載置し熱処
理する熱処理板と,この熱処理板を上方から覆い,処理
室の一部を形成する蓋体と,を備え,前記蓋体は,上面
部と側部を有し下面側が開口した略筒状の形態を有し,
前記上面部は,前記熱処理板上の基板に対向し,前記上
面部と熱処理板上の基板との温度差によって処理室内に
自然対流が発生しないように,前記上面部と前記基板と
の距離が調整されており,前記蓋体の内側には,処理室
内の雰囲気の不純物に対する付着性を向上する表面処理
が施されていることを特徴とする熱処理装置が提供され
る。According to the fifteenth aspect of the present invention, there is provided a heat treatment apparatus for heat treating a substrate in a processing chamber, wherein a heat treatment plate on which a substrate is placed and heat treatment is performed, and the heat treatment plate is covered from above, and a part of the treatment chamber is covered. A lid body to be formed, and the lid body has a substantially cylindrical shape having an upper surface portion and side portions and an opening on a lower surface side,
The upper surface portion faces the substrate on the heat treatment plate, and a distance between the upper surface portion and the substrate is set so that natural convection does not occur in the processing chamber due to a temperature difference between the upper surface portion and the substrate on the heat treatment plate. A heat treatment apparatus is provided, which is adjusted and is subjected to a surface treatment on the inner side of the lid body to improve adhesion of impurities in an atmosphere in the treatment chamber.
【0022】この熱処理装置によれば,気体の導入によ
る気流を処理室内に発生させず,さらに自然対流を発生
させずに,基板の熱処理を行うことができる。したがっ
て,基板外縁部においても不均一な気流による悪影響が
なく,適切な処理が行われる。また,処理室内に浮遊す
る不純物を蓋体の内側に付着させることができるので,
不純物が基板に付着することを抑制できる。According to this heat treatment apparatus, the heat treatment of the substrate can be performed without generating an air flow due to the introduction of gas in the processing chamber and further without generating natural convection. Therefore, even at the outer edge of the substrate, there is no adverse effect due to the nonuniform air flow, and appropriate processing is performed. Moreover, since impurities floating in the processing chamber can be attached to the inside of the lid,
It is possible to prevent impurities from adhering to the substrate.
【0023】請求項16の発明によれば,処理室内で基
板を熱処理する熱処理装置であって,基板を載置し熱処
理する熱処理板と,この熱処理板を上方から覆い,処理
室の一部を形成する蓋体と,を備え,前記蓋体は,上面
部と側部を有し下面側が開口した略筒状の形態を有し,
前記上面部は,前記熱処理板上の基板に対向し,前記上
面部には,当該上面部の温度を前記熱処理板の温度と同
じ温度に調整する温度調節手段が設けられており,前記
蓋体の内側には,処理室内の雰囲気の不純物に対する付
着性を向上する表面処理が施されていることを特徴とす
る熱処理装置が提供される。According to the sixteenth aspect of the present invention, there is provided a heat treatment apparatus for heat-treating a substrate in a processing chamber, wherein a heat treatment plate on which a substrate is placed and heat treatment is performed, and the heat treatment plate is covered from above to cover a part of the treatment chamber. A lid body to be formed, and the lid body has a substantially cylindrical shape having an upper surface portion and side portions and an opening on a lower surface side,
The upper surface portion faces a substrate on the heat treatment plate, and the upper surface portion is provided with temperature adjusting means for adjusting the temperature of the upper surface portion to the same temperature as the temperature of the heat treatment plate. There is provided a heat treatment apparatus characterized in that a surface treatment is performed on the inner side of the substrate to improve the adhesion of the atmosphere in the treatment chamber to impurities.
【0024】この熱処理装置によれば,蓋体の上面部と
熱処理板との温度が同じに保たれるので,前記上面部と
熱処理板との温度差により自然対流の発生を防止でき
る。つまり,処理室内に何ら気流が無い状態で,基板を
熱処理することができる。したがって,不均一な気流が
基板外縁部に悪影響を及ぼすことがなく,基板外縁部に
おいても適切な熱処理を行うことができる。また,処理
室内に浮遊する不純物を蓋体の内側に付着させることが
できるので,不純物が基板に付着することを抑制でき
る。According to this heat treatment apparatus, since the temperature of the upper surface of the lid and the temperature of the heat treated plate are kept the same, it is possible to prevent the occurrence of natural convection due to the temperature difference between the upper surface and the heat treated plate. That is, the substrate can be heat-treated without any air flow in the processing chamber. Therefore, the non-uniform air flow does not adversely affect the outer edge portion of the substrate, and appropriate heat treatment can be performed on the outer edge portion of the substrate. Further, since impurities floating in the processing chamber can be attached to the inside of the lid, it is possible to suppress the impurities from attaching to the substrate.
【0025】前記不純物に対する付着性を向上する表面
処理は,表面エネルギーを上昇させる処理であってもよ
く,粗面化処理であってもよい。The surface treatment for improving the adhesion to the impurities may be a treatment for increasing the surface energy or a roughening treatment.
【0026】請求項19の発明によれば,処理室内にお
いて基板を熱処理板上に載置して熱処理する熱処理方法
であって,処理室上部から導入された気体を,前記熱処
理板上の基板の外方であって基板より高い位置から排気
しながら,熱処理を行うことを特徴とする熱処理方法が
提供される。According to a nineteenth aspect of the present invention, there is provided a heat treatment method in which a substrate is placed on a heat treatment plate in a processing chamber to perform heat treatment, wherein a gas introduced from the upper portion of the processing chamber is used to remove the gas from the substrate on the heat treatment plate. There is provided a heat treatment method characterized by performing heat treatment while exhausting from a position outside and higher than a substrate.
【0027】この熱処理方法によれば,処理室上部から
導入された気体を,基板よりも高い位置から排気するの
で,基板の外縁部付近に気流が形成されず,従来のよう
に不均一な気流が基板外縁部に悪影響を及ぼすことがな
く,基板外縁部においても適切な熱処理が行われる。According to this heat treatment method, the gas introduced from the upper part of the processing chamber is exhausted from a position higher than the substrate, so that no air flow is formed near the outer edge of the substrate, resulting in a non-uniform air flow as in the prior art. Does not adversely affect the outer edge of the substrate, and appropriate heat treatment is performed even on the outer edge of the substrate.
【0028】請求項20の発明によれば,上方から基板
を覆う蓋体によって形成された処理室内において,基板
を所定温度に維持された熱処理板に載置して熱処理を行
う熱処理方法であって,処理室内に自然対流が起こらな
いように,前記基板に対向する蓋体の上面部と熱処理板
との距離を調整し,処理室内に気流を形成しないで熱処
理を行うことを特徴とする熱処理方法が提供される。According to the twentieth aspect of the present invention, there is provided a heat treatment method of performing heat treatment by placing the substrate on a heat treatment plate maintained at a predetermined temperature in a treatment chamber formed by a lid covering the substrate from above. A heat treatment method, characterized in that the distance between the heat treatment plate and the upper surface of the lid facing the substrate is adjusted so that natural convection does not occur in the treatment chamber, and heat treatment is performed without forming an air flow in the treatment chamber. Will be provided.
【0029】また,請求項21の発明によれば,上方か
ら基板を覆う蓋体によって形成された処理室内におい
て,基板を所定温度に維持された熱処理板に載置して熱
処理を行う熱処理方法であって,処理室内に自然対流が
起こらないように,前記基板に対向する前記蓋体の上面
部の温度を,熱処理板と同じ温度になるように調整し,
処理室内に気流を形成しないで熱処理を行うことを特徴
とする熱処理方法が提供される。According to the twenty-first aspect of the present invention, there is provided a heat treatment method in which a substrate is placed on a heat treatment plate maintained at a predetermined temperature in a treatment chamber formed by a lid covering the substrate from above to perform heat treatment. In order to prevent natural convection in the processing chamber, the temperature of the upper surface of the lid facing the substrate is adjusted to the same temperature as the heat treatment plate,
There is provided a heat treatment method characterized by performing heat treatment without forming an air flow in the processing chamber.
【0030】上記処理室内に気流を形成しないで熱処理
を行う方法によれば,従来のような不均一な気流が基板
の外縁部に悪影響を及ぼすことないので,基板外縁部に
おいても適切な熱処理が行われる。According to the method of performing heat treatment without forming an air flow in the processing chamber, the non-uniform air flow does not adversely affect the outer edge portion of the substrate as in the conventional case, so that appropriate heat treatment can be performed even on the outer edge portion of the substrate. Done.
【0031】[0031]
【発明の実施の形態】以下,本発明の好ましい実施の形
態について説明する。図1は,第1の実施の形態にかか
る熱処理装置が搭載された塗布現像処理システム1の構
成の概略を示す平面図であり,図2は,塗布現像処理シ
ステム1の正面図であり,図3は,塗布現像処理システ
ム1の背面図である。BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of the present invention will be described below. FIG. 1 is a plan view showing the outline of the configuration of a coating and developing treatment system 1 equipped with a heat treatment apparatus according to the first embodiment, and FIG. 2 is a front view of the coating and developing treatment system 1. 3 is a rear view of the coating and developing treatment system 1.
【0032】塗布現像処理システム1は,図1に示すよ
うに例えば25枚のウェハWをカセット単位で外部から
塗布現像処理システム1に対して搬入出したり,カセッ
トCに対してウェハWを搬入出したりするカセットステ
ーション2と,塗布現像処理工程の中で枚葉式に所定の
処理を施す各種処理装置を多段配置してなる処理ステー
ション3と,この処理ステーション3に隣接して設けら
れている図示しない露光装置との間でウェハWの受け渡
しをするインターフェイス部4とを一体に接続した構成
を有している。As shown in FIG. 1, the coating / development processing system 1 carries in / out 25 wafers W to / from the coating / development processing system 1 from the outside in a cassette unit, and carries in / out the wafer W from / to the cassette C. A cassette station 2, a processing station 3 in which various processing devices for performing predetermined processing in a single-wafer type in a coating and developing processing step are arranged in multiple stages, and a processing station 3 provided adjacent to the processing station 3. It has a structure in which the interface unit 4 for transferring the wafer W to and from the exposure apparatus which is not connected is integrally connected.
【0033】カセットステーション2では,載置部とな
るカセット載置台5上の所定の位置に,複数のカセット
CをX方向(図1中の上下方向)に一列に載置自在とな
っている。そして,このカセット配列方向(X方向)と
カセットCに収容されたウェハWのウェハ配列方向(Z
方向;鉛直方向)に対して移送可能なウェハ搬送体7が
搬送路8に沿って移動自在に設けられており,各カセッ
トCに対して選択的にアクセスできるようになってい
る。In the cassette station 2, a plurality of cassettes C can be placed in a line in the X direction (vertical direction in FIG. 1) at a predetermined position on the cassette placing table 5 serving as a placing portion. Then, this cassette arrangement direction (X direction) and the wafer arrangement direction of the wafers W accommodated in the cassette C (Z
Direction; vertical direction), a wafer transfer body 7 is provided so as to be movable along a transfer path 8 so that each cassette C can be selectively accessed.
【0034】ウェハ搬送体7は,ウェハWの位置合わせ
を行うアライメント機能を備えている。このウェハ搬送
体7は後述するように処理ステーション3側の第3の処
理装置群G3に属するエクステンション装置32に対し
てもアクセスできるように構成されている。The wafer carrier 7 has an alignment function for aligning the wafer W. The wafer carrier 7 is configured to be accessible to the extension device 32 belonging to the third processing device group G3 on the processing station 3 side as described later.
【0035】処理ステーション3では,その中心部に主
搬送装置13が設けられており,この主搬送装置13の
周辺には各種処理装置が多段に配置されて処理装置群を
構成している。該塗布現像処理システム1においては,
4つの処理装置群G1,G2,G3,G4が配置されており,第
1及び第2の処理装置群G1,G2は,塗布現像処理システ
ム1の正面側に配置され,第3の処理装置群G3は,カセ
ットステーション2に隣接して配置され,第4の処理装
置群G4は,インターフェイス部4に隣接して配置されて
いる。さらにオプションとして破線で示した第5の処理
装置群G5を背面側に別途配置可能となっている。前記主
搬送装置13は,これらの処理装置群G1,G2,G3,G4,
G5に配置されている後述する各種処理装置に対して,ウ
ェハWを搬入出可能である。なお,処理装置群の数や配
置は,ウェハWに施される処理の種類によって異なり,
処理装置群の数は,1つ以上であれば任意に選択可能で
ある。In the processing station 3, a main carrier unit 13 is provided at the center thereof, and various processing units are arranged in multiple stages around the main carrier unit 13 to form a processing unit group. In the coating and developing treatment system 1,
Four processing unit groups G1, G2, G3, G4 are arranged. The first and second processing unit groups G1, G2 are arranged on the front side of the coating and developing treatment system 1, and the third processing unit group. The G3 is arranged adjacent to the cassette station 2, and the fourth processing unit group G4 is arranged adjacent to the interface unit 4. Further, as an option, a fifth processing unit group G5 indicated by a broken line can be separately arranged on the back side. The main transfer device 13 includes the processing device groups G1, G2, G3, G4,
The wafer W can be loaded / unloaded into / from various processing apparatuses, which will be described later, arranged in G5. It should be noted that the number and arrangement of the processing device groups differ depending on the type of processing performed on the wafer W.
The number of processing device groups can be arbitrarily selected as long as it is one or more.
【0036】第1の処理装置群G1では,例えば図2に示
すように,ウェハWにレジスト液を塗布し,ウェハW上
にレジスト膜を形成するレジスト塗布装置17と,露光
後にウェハWを現像処理する現像処理装置18とが下か
ら順に2段に配置されている。第2の処理装置群G2の場
合も同様に,レジスト塗布装置19と,現像処理装置2
0とが下から順に2段に積み重ねられている。In the first processing unit group G1, for example, as shown in FIG. 2, a resist coating device 17 for coating a resist liquid on the wafer W to form a resist film on the wafer W, and a wafer W developed after exposure are developed. The developing processing device 18 for processing is arranged in two stages in order from the bottom. Similarly, in the case of the second processing device group G2, the resist coating device 19 and the developing processing device 2
0 and 2 are stacked in order from the bottom.
【0037】第3の処理装置群G3では,例えば図3に示
すようにウェハWを冷却処理するクーリング装置30,
レジスト液とウェハWとの定着性を高めるためのアドヒ
ージョン装置31,ウェハWの受け渡しを行うためのエ
クステンション装置32,第1の実施の形態にかかる熱
処理装置としてのプリベーキング装置33,34及び現
像処理後の加熱処理を施すポストベーキング装置35が
下から順に例えば6段に重ねられている。In the third processing unit group G3, for example, as shown in FIG. 3, a cooling unit 30 for cooling the wafer W,
An adhesion device 31 for enhancing the fixability of the resist liquid and the wafer W, an extension device 32 for transferring the wafer W, pre-baking devices 33, 34 as heat treatment devices according to the first embodiment, and a developing process. Post-baking devices 35 for performing the subsequent heat treatment are stacked, for example, in six stages from the bottom.
【0038】第4の処理装置群G4では,例えばクーリン
グ装置40,載置したウェハWを自然冷却させるエクス
テンション・クーリング装置41,エクステンション装
置42,クーリング装置43,露光後の加熱処理を行う
ポストエクスポージャーベーキング装置44,45及び
ポストベーキング装置46が下から順に例えば7段に積
み重ねられている。In the fourth processing unit group G4, for example, a cooling unit 40, an extension / cooling unit 41 for naturally cooling the mounted wafer W, an extension unit 42, a cooling unit 43, and a post-exposure baking for performing a heat treatment after exposure are performed. The devices 44 and 45 and the post-baking device 46 are stacked in order from the bottom, for example, in 7 stages.
【0039】インターフェイス部4の中央部には,図1
に示すように例えばウェハ搬送体50が設けられてい
る。このウェハ搬送体50はX方向(図1中の上下方
向),Z方向(垂直方向)の移動とθ方向(Z軸を中心
とする回転方向)の回転が自在にできるように構成され
ており,第4の処理装置群G4に属するエクステンション
・クーリング装置41,エクステンション装置42,周
辺露光装置51及び図示しない露光装置に対してアクセ
スして,各々に対してウェハWを搬送できるように構成
されている。In the center of the interface unit 4, the interface shown in FIG.
For example, a wafer carrier 50 is provided as shown in FIG. The wafer carrier 50 is configured to be freely movable in the X direction (vertical direction in FIG. 1), the Z direction (vertical direction) and the θ direction (rotational direction around the Z axis). , The extension / cooling device 41, the extension device 42, the peripheral exposure device 51, and an exposure device (not shown) belonging to the fourth processing device group G4 can be accessed to transfer the wafer W to each of them. There is.
【0040】ここで,プリベーキング装置33,34の
構成について,プリベーキング装置33を例に採って説
明する。プリベーキング装置33は,塗布後のレジスト
膜中に残存する溶剤を蒸発させる加熱処理を行うもので
ある。The structure of the prebaking devices 33 and 34 will be described by taking the prebaking device 33 as an example. The pre-baking device 33 performs a heating process for evaporating the solvent remaining in the resist film after coating.
【0041】プリベーキング装置33は,図4に示すよ
うにケーシング60内に,上下動自在な蓋体61と,蓋
体61の下側に位置し当該蓋体61と一体となって処理
室Sを形成するサポートリング62を備えている。As shown in FIG. 4, the pre-baking device 33 includes a lid 61 which is movable up and down in a casing 60, and a processing chamber S which is located below the lid 61 and is integrated with the lid 61. A support ring 62 that forms
【0042】サポートリング62は,例えば上下面が開
口した略円筒状の形態を有し,その内側に熱処理板とし
ての熱板63を収容できる。熱板63を収容することに
より,サポートリング62の下面が閉鎖されている。熱
板63は,厚みのある円盤形状を有し,ウェハWを載置
し加熱するものである。例えば熱板63には,給電によ
り発熱するヒータ64が内蔵されており,熱板63自体
を所定の温度に加熱し維持できる。つまり,所定の温度
に加熱された熱板63にウェハWを載置することによっ
て,ウェハWを所定温度に加熱できる。The support ring 62 has, for example, a substantially cylindrical shape whose upper and lower surfaces are open, and can accommodate a heat plate 63 as a heat treatment plate inside thereof. By housing the heating plate 63, the lower surface of the support ring 62 is closed. The heating plate 63 has a thick disk shape, and is used for mounting and heating the wafer W. For example, the heating plate 63 has a built-in heater 64 that generates heat by power supply, and can heat and maintain the heating plate 63 at a predetermined temperature. That is, the wafer W can be heated to a predetermined temperature by placing the wafer W on the heating plate 63 heated to a predetermined temperature.
【0043】熱板63には,例えば3つの貫通孔65が
形成されている。各貫通孔65には,ウェハWの裏面を
支持して昇降する昇降ピン66がそれぞれ挿入されてい
る。昇降ピン66は,例えばシリンダ等を備えた昇降機
構67により上下動する。昇降ピン66は,熱板63の
上方まで上昇して主搬送装置13との間でウェハWを授
受したり,受け取ったウェハWを熱板63に載置したり
できる。For example, three through holes 65 are formed in the heating plate 63. Elevating pins 66 for supporting the back surface of the wafer W and moving up and down are inserted into the through holes 65, respectively. The elevating pin 66 moves up and down by an elevating mechanism 67 including, for example, a cylinder. The elevating pins 66 can be elevated above the hot plate 63 to transfer the wafer W to and from the main carrier 13, and to place the received wafer W on the hot plate 63.
【0044】サポートリング62の上面には,Oリング
68が設けられ,サポートリング62の上面と蓋体61
の側部61aの下端部との隙間から処理室S内の気体が
流出しないようになっている。An O-ring 68 is provided on the upper surface of the support ring 62, and the upper surface of the support ring 62 and the lid 61.
The gas in the processing chamber S does not flow out from the gap between the side portion 61a and the lower end portion.
【0045】蓋体61は,上面側が上面部である天板7
0により閉口し下面側が開口した略円筒形状の形態を有
している。天板70は,熱板63上のウェハWに対向し
ている。天板70上の中央部には,図示しないガス供給
源に連通したパージ用ガスのガス供給部71が設けられ
ている。天板70の中央部には,ガス供給部71に通じ
る供給口72が設けられている。したがって,図示しな
いガス供給源の空気,窒素ガス又は不活性ガス等のガス
を,ガス供給部71を介して供給口72に供給し,供給
口72から処理室S内に導入することができる。The lid 61 has a top plate 7 whose upper surface is the upper surface.
It has a substantially cylindrical shape in which it is closed by 0 and the lower surface side is opened. The top plate 70 faces the wafer W on the heating plate 63. A gas supply portion 71 for purging gas, which communicates with a gas supply source (not shown), is provided at the center of the top plate 70. A supply port 72 communicating with the gas supply unit 71 is provided at the center of the top plate 70. Therefore, it is possible to supply a gas such as air, a nitrogen gas, or an inert gas from a gas supply source (not shown) to the supply port 72 via the gas supply unit 71 and introduce the gas into the processing chamber S from the supply port 72.
【0046】蓋体61の内側であって天板70と熱板6
3との間には,例えば円形状の2つの整流板73,74
が上下に並設されている。この第1及び第2の整流板7
3,74は,天板70及び熱板63に対して水平になる
ように固設されている。第1の整流板73には,図5に
示すように複数の通気孔75が均等に分散されて開けら
れている。通気孔75は,例えば図6に示すように第1
の整流板73の外方に向けて斜めに開けられており,上
方から通気孔75内に流入したガスは,鉛直下方向から
外方向側に傾いた俯角方向に流出する。Inside the lid 61, the top plate 70 and the heating plate 6
Between the three, for example, two circular straightening plates 73, 74
Are lined up and down. The first and second straightening vanes 7
3, 74 are fixedly installed so as to be horizontal to the top plate 70 and the heat plate 63. As shown in FIG. 5, a plurality of ventilation holes 75 are evenly distributed and opened in the first straightening vane 73. The vent hole 75 is, for example, as shown in FIG.
The gas is opened obliquely toward the outside of the straightening plate 73, and the gas that has flowed into the ventilation hole 75 from above flows out in the depression direction that is inclined outward from the vertically downward direction.
【0047】第2の整流板74は,図7及び図8に示す
ように第1の整流板73と同様の鉛直下方向から外方側
に傾いた通気孔75を備えている。第2の整流板74
は,第1の整流板73よりも開口率が高く,より多くの
通気孔75が開けられている。したがって,供給口72
から導入されたガスは,第1の整流板73により大きく
圧損し,第2の整流板74により分散されて熱板63上
方に流出する。また,当該ガスは,ウェハWの外方側,
つまり蓋体61の側部61aに向かって流れる。なお,
第1の整流板73の通気孔75の傾斜を第2の整流板7
4の通気孔75の傾斜よりも大きくしてもよい。また,
第1の整流板73と第2の整流板74の表面には,不純
物を付着しにくくするため平坦又は鏡面化処理が施され
ており,例えば表面粗さ(Ra)が2.0×10−3程
度に加工されている。As shown in FIGS. 7 and 8, the second straightening vane 74 is provided with a vent hole 75 that is inclined outward from the vertically downward direction as is the case with the first straightening vane 73. Second rectifying plate 74
Has a higher aperture ratio than the first rectifying plate 73, and more vent holes 75 are opened. Therefore, the supply port 72
The gas introduced from (1) is largely pressure-damped by the first straightening vane 73, is dispersed by the second straightening vane 74, and flows out above the hot plate 63. Further, the gas is on the outer side of the wafer W,
That is, it flows toward the side portion 61a of the lid 61. In addition,
The inclination of the vent hole 75 of the first straightening vane 73 is adjusted to the second straightening vane 7
It may be larger than the inclination of the ventilation hole 75 of No. 4. Also,
The surfaces of the first rectifying plate 73 and the second rectifying plate 74 are flattened or mirror-finished in order to prevent impurities from adhering, and have a surface roughness (Ra) of 2.0 × 10 − , for example. It is processed to about 3 .
【0048】蓋体61の側部61aは,図4に示すよう
に肉厚に形成されており,略円筒状の内周壁61bとそ
の外側の略円筒状の外周壁61cからなる二重構造を有
している。内周壁61bと外周壁61cとの間には,隙
間があり,当該隙間は,ガスの排気通路80になってい
る。したがって,排気通路80は,側部61a内を垂直
方向に,かつ図9に示すようにリング状に通っている。
側部61aの内側の下部,つまり内周壁61bの下部に
は,図4に示すように処理室S内のガス等の雰囲気を排
気する排気口81が設けられている。排気口81は,例
えば内周壁61bに沿ってリング状に設けられている。
蓋体61とサポートリング62によって処理室Sが形成
された際に,排気口81の位置が熱板63上のウェハW
より高い位置になるように,排気口81は開けられてい
る。The side portion 61a of the lid 61 is formed thick as shown in FIG. 4, and has a double structure composed of a substantially cylindrical inner peripheral wall 61b and an outer substantially cylindrical outer peripheral wall 61c. Have There is a gap between the inner peripheral wall 61b and the outer peripheral wall 61c, and the gap serves as a gas exhaust passage 80. Therefore, the exhaust passage 80 passes through the inside of the side portion 61a in the vertical direction and in a ring shape as shown in FIG.
As shown in FIG. 4, an exhaust port 81 for exhausting the atmosphere such as gas in the processing chamber S is provided in the lower portion inside the side portion 61a, that is, in the lower portion of the inner peripheral wall 61b. The exhaust port 81 is provided, for example, in a ring shape along the inner peripheral wall 61b.
When the processing chamber S is formed by the lid 61 and the support ring 62, the position of the exhaust port 81 is at the wafer W on the hot plate 63.
The exhaust port 81 is opened to a higher position.
【0049】排気通路80には,複数,例えば3つの排
気用整流板としての整流板82,83,84が上下方向
に並設されている。これらの整流板82〜84は,排気
通路80を覆うように排気通路80の形状に沿ってリン
グ状に形成されている。整流板82〜84は,排気通路
80に沿って直列的に設けられており,下から第3の整
流板82,第4の整流板83,第5の整流板84の順に
配置されている。各整流板82〜84には,図10に示
すように複数の通気孔85が開けられており,排気口8
1から吸入されたガスは,各整流板82〜84の通気孔
85を通過して排気通路80内を上昇する。各整流板8
2〜84の通気孔85の数は異なっており,例えば第3
の整流板82には八箇所,第4の整流板83には四箇
所,第5の整流板84には二箇所設けられている。この
ように上流側,つまり排気通路80の吸入側から排出側
に近づくにつれて通気孔85の数が多くなっている。こ
れは,下流の排出側にある後述する通過孔86にかかる
排気圧力を損失させるためである。つまり,下流の通過
孔86において一箇所に集中している排気圧力を,上流
に行くにつれて分散させ,処理室S内の雰囲気をリング
状の排気口81から均等に排気するためである。なお,
各整流板82〜84の通気孔85は,等間隔に配置され
ており,ガスは排気通路80内を偏りなく流れる。In the exhaust passage 80, a plurality of, for example, three rectifying plates 82, 83, 84 as exhaust rectifying plates are arranged vertically in parallel. These straightening plates 82 to 84 are formed in a ring shape along the shape of the exhaust passage 80 so as to cover the exhaust passage 80. The straightening vanes 82 to 84 are provided in series along the exhaust passage 80, and the third straightening vane 82, the fourth straightening vane 83, and the fifth straightening vane 84 are arranged in this order from the bottom. As shown in FIG. 10, a plurality of ventilation holes 85 are formed in each of the straightening plates 82 to 84, and the exhaust port 8
The gas sucked from No. 1 passes through the ventilation holes 85 of the flow straightening plates 82 to 84 and rises in the exhaust passage 80. Each straightening plate 8
The number of ventilation holes 85 of 2 to 84 is different, for example, the third
The straightening vanes 82 are provided at eight positions, the fourth straightening plate 83 is provided at four places, and the fifth straightening plate 84 is provided at two places. In this way, the number of vent holes 85 increases as the upstream side, that is, the suction side of the exhaust passage 80 approaches the discharge side. This is because the exhaust pressure applied to a later-described passage hole 86 on the downstream discharge side is lost. That is, the exhaust pressure concentrated at one place in the downstream passage hole 86 is dispersed as it goes upstream, and the atmosphere in the processing chamber S is evenly exhausted from the ring-shaped exhaust port 81. In addition,
The ventilation holes 85 of the straightening vanes 82 to 84 are arranged at equal intervals, and the gas flows in the exhaust passage 80 without deviation.
【0050】天板70は,図4に示すように側部61a
の上蓋にもなっており,当該天板70には,排気通路8
0のガスを通過させる通過孔86が設けられている。通
過孔86は,一箇所に設けられている。通過孔86上に
は,ガス内の不純物,例えば昇華物を回収するための不
純物回収部87が設けられている。不純物回収部87
は,その内部に不純物回収通路88を備えており,この
不純物回収通路88は,通過孔86に連通している。不
純物回収通路88には,フィルタ89が取り付けられて
おり,不純物回収通路88を通過したガス中の不純物
は,このフィルタ89によって回収される。不純物回収
部87は,例えばプリべーキング装置33外に設けられ
た工場内のポンプ等の負圧発生手段(図示せず)に接続
されており,不純物回収部87側に負圧が印加され,処
理室S内の雰囲気を排気口81から吸気できるようにな
っている。なお,不純物回収部87を,例えば供給用ガ
スタンクに接続し,排気されたガスを処理室S内への供
給ガスとして再利用できるようにしてもよい。The top plate 70 has a side portion 61a as shown in FIG.
It also serves as an upper lid, and the top plate 70 has an exhaust passage 8
A passage hole 86 is provided for passing zero gas. The passage hole 86 is provided at one place. An impurity recovery unit 87 is provided on the passage hole 86 for recovering impurities in the gas, for example, sublimates. Impurity recovery unit 87
Has an impurity recovery passage 88 therein, and the impurity recovery passage 88 communicates with the passage hole 86. A filter 89 is attached to the impurity recovery passage 88, and the impurities in the gas passing through the impurity recovery passage 88 are recovered by the filter 89. The impurity recovery unit 87 is connected to a negative pressure generating means (not shown) such as a pump in a factory provided outside the prebaking apparatus 33, and a negative pressure is applied to the impurity recovery unit 87 side. The atmosphere in the processing chamber S can be sucked from the exhaust port 81. Note that the impurity recovery unit 87 may be connected to, for example, a supply gas tank so that the exhausted gas can be reused as the supply gas into the processing chamber S.
【0051】上記構成によって,処理室Sの上部から導
入されたガスは,第1の整流板73,第2の整流板74
を通過し,ウェハW外方でウェハWより高い位置にある
排気口81に流入し,蓋体61の側部61aの排気通路
80を通過して不純物回収部87で不純物が除去された
後,プリベーキング装置33外に排気される。With the above structure, the gas introduced from the upper part of the processing chamber S is supplied to the first rectifying plate 73 and the second rectifying plate 74.
Through the exhaust passage 81 of the side portion 61a of the lid 61 and the impurities are removed by the impurity recovery unit 87. It is exhausted to the outside of the prebaking device 33.
【0052】また,図10に示すように蓋体61の外周
壁61cは,内周壁61bに対して取り外し自在になっ
ている。例えば天板70と外周壁61cが固着されてお
り,天板70と一体化した外周壁61cを持ち上げるこ
とによって外周壁61cと内周壁61bとを切り離すこ
とができる。この結果,排気通路80内がむき出しにな
り,昇華物や溶剤によって汚れた排気通路80内の洗浄
を容易に行うことができる。As shown in FIG. 10, the outer peripheral wall 61c of the lid 61 is removable from the inner peripheral wall 61b. For example, the top plate 70 and the outer peripheral wall 61c are fixed to each other, and the outer peripheral wall 61c and the inner peripheral wall 61b can be separated by lifting the outer peripheral wall 61c integrated with the top plate 70. As a result, the inside of the exhaust passage 80 is exposed, and the inside of the exhaust passage 80 contaminated by a sublimate or a solvent can be easily cleaned.
【0053】なお,蓋体61全体は,シリンダ等を備え
た図示しない昇降機構により上下動自在であり,ウェハ
Wの搬入出時に蓋体61が上下動される。また,ケーシ
ング60の側面には,主搬送装置13によってウェハW
を搬入出するための搬入出口90が設けられている。The entire lid 61 can be moved up and down by an elevator mechanism (not shown) equipped with a cylinder or the like, and the lid 61 is moved up and down when the wafer W is loaded and unloaded. Further, the wafer W is attached to the side surface of the casing 60 by the main transfer device 13.
A loading / unloading port 90 for loading and unloading is provided.
【0054】第1の実施の形態にかかるプリベーキング
装置33は,以上のように構成されており,次にその作
用等について説明する。先ずウェハWがプリベーキング
装置33に搬送される前に,ガス供給部71からパージ
用のガスが供給され始める。また,熱板63は,ヒータ
64により所定の加熱温度,例えば90℃〜200℃に
維持される。The prebaking device 33 according to the first embodiment is constructed as described above, and its operation and the like will be described below. First, before the wafer W is transferred to the pre-baking apparatus 33, the purge gas is supplied from the gas supply unit 71. The heating plate 63 is maintained at a predetermined heating temperature, for example, 90 ° C. to 200 ° C. by the heater 64.
【0055】そして,露光装置において露光処理が終了
し,主搬送装置13に保持されたウェハWは,搬入出口
90からケーシング60内に搬送され,熱板63の上方
で予め上昇して待機していた昇降ピン66に受け渡され
る。続いて蓋体61が下降し,サポートリング62と一
体となって処理室Sが形成される。このとき,供給口7
2から供給されたガスは,図4に示すように第1の整流
板73,第2の整流板74を通過して,気流の方向が蓋
体61の側部61a側に向けられる。第2の整流板74
を通過したガスは,ウェハW表面に達することなく,排
気口81から排気される。排気口81から排気されたガ
スは,排気通路80の各整流板82〜84を通過し,不
純物回収通路88に流れ込み,フィルタ89を通過して
不純物が回収されてから排気される。Then, the wafer W held by the main transfer device 13 after the exposure processing is completed in the exposure device is transferred from the loading / unloading port 90 into the casing 60, and rises in advance above the hot plate 63 and stands by. It is delivered to the lifting pin 66. Then, the lid 61 descends, and the processing chamber S is formed integrally with the support ring 62. At this time, supply port 7
As shown in FIG. 4, the gas supplied from 2 passes through the first rectifying plate 73 and the second rectifying plate 74, and the direction of the air flow is directed to the side portion 61a side of the lid 61. Second rectifying plate 74
The gas that has passed through is exhausted from the exhaust port 81 without reaching the surface of the wafer W. The gas exhausted from the exhaust port 81 passes through the flow control plates 82 to 84 of the exhaust passage 80, flows into the impurity recovery passage 88, passes through the filter 89 to recover the impurities, and then is exhausted.
【0056】処理室S上方から下降し,ウェハWの外方
であってウェハWより高い位置に流れる気流が形成され
ると,続いて昇降ピン66が下降し,ウェハWが熱板6
3上に載置される。こうしてウェハWの加熱が開始さ
れ,所定時間の加熱が行われる。この加熱により発生し
た溶剤は,上記ガスの気流に取り込まれ,排気口81か
ら排気される。不純物回収部87においては,溶剤と共
にウェハW等から発生した不純物がフィルタ88に回収
され,当該不純物を除去されたガスは,例えば工場排気
に送られる。When an air stream is formed which descends from above the processing chamber S and is located outside the wafer W and at a position higher than the wafer W, the elevating pins 66 subsequently descend and the wafer W heats the plate 6.
3 is placed on top. In this way, heating of the wafer W is started, and heating is performed for a predetermined time. The solvent generated by this heating is taken into the gas stream and is exhausted from the exhaust port 81. In the impurity recovery unit 87, the impurities generated from the wafer W and the like together with the solvent are recovered by the filter 88, and the gas from which the impurities have been removed is sent to, for example, factory exhaust.
【0057】所定時間の加熱が終了すると,再び昇降ピ
ン66が上昇し,ウェハWが熱板63上に持ち上げられ
る。続いて例えば蓋体61が上昇し,処理室Sが開放さ
れる。処理室Sが開放されると,例えばガスの供給が停
止される。When the heating for a predetermined time is completed, the lift pins 66 are lifted again and the wafer W is lifted onto the hot plate 63. Then, for example, the lid 61 rises and the processing chamber S is opened. When the processing chamber S is opened, gas supply is stopped, for example.
【0058】昇降ピン66上のウェハWは,再び搬入出
口90から進入した主搬送装置13に受け渡され,プリ
ベーキング装置33から搬出される。The wafer W on the elevating pins 66 is transferred to the main carrier 13 which has entered from the carry-in / out port 90 again, and carried out from the pre-baking device 33.
【0059】この第1の実施の形態によれば,蓋体61
の側部61aにおけるウェハWよりも高い位置に排気口
81を設けたので,蓋体61の天板70から導入された
ガスが蓋体61の側部61aに向かって流れる。この結
果,ガスがウェハW表面に直接吹き付けられることがな
くなり,ウェハW表面のレジスト膜中の溶剤の揮発が気
流の動向に左右されることがなくなる。したがって,ウ
ェハWの外縁部が不安定な気流により悪影響を受けるこ
とがなくなり,ウェハW外縁部においても均一な膜厚の
レジスト膜が形成される。According to the first embodiment, the lid 61
Since the exhaust port 81 is provided at a position higher than the wafer W on the side portion 61a of the cover 61, the gas introduced from the top plate 70 of the cover 61 flows toward the side 61a of the cover 61. As a result, the gas is not directly blown onto the surface of the wafer W, and the volatilization of the solvent in the resist film on the surface of the wafer W is not influenced by the movement of the air flow. Therefore, the outer edge of the wafer W is not adversely affected by the unstable air flow, and the resist film having a uniform film thickness is formed also on the outer edge of the wafer W.
【0060】蓋体61に,排気口81,排気通路80及
び不純物回収部87を設けたので,装置本体から蓋体6
1を取り外すことによって排気系統の機構も取り外すこ
とができる。したがって,プリベーキング装置33本体
から蓋体61を取り外した時に,排気系統の洗浄等のメ
ンテナンスも行うことができる。特に,プリベーキング
装置33では,溶剤が蒸発し排気系統が汚染されやすい
ので,その効果は大きい。Since the lid 61 is provided with the exhaust port 81, the exhaust passage 80, and the impurity collecting section 87, the lid body 6 is removed from the main body of the apparatus.
By removing 1, the mechanism of the exhaust system can also be removed. Therefore, when the lid 61 is removed from the main body of the prebaking apparatus 33, maintenance such as cleaning of the exhaust system can be performed. In particular, in the pre-baking device 33, the solvent is easily evaporated and the exhaust system is easily contaminated, so that the effect is great.
【0061】また,蓋体61の側部61aを内周壁61
bと外周壁61cとの二重構造にし,外周壁61cと内
周壁61bとを切り離し自在にしたので,排気通路80
をむき出しにすることができる。この結果,汚染されや
すい排気通路80内のメンテナンスをより簡単に行うこ
とができる。Further, the side portion 61a of the lid body 61 is attached to the inner peripheral wall 61.
b and the outer peripheral wall 61c have a double structure, and the outer peripheral wall 61c and the inner peripheral wall 61b can be separated from each other.
Can be exposed. As a result, the maintenance of the exhaust passage 80, which is easily polluted, can be performed more easily.
【0062】排気通路80に,3つの整流板82〜84
を設け,通気孔85の数を上流に行くにつれ多くなるよ
うに開けたので,下流側からの排気圧力が段階的に圧損
して処理室S内の雰囲気をリング状の排気口81から均
等に排気できる。したがって,ウェハW上の溶剤の排気
が均等に行われ,ウェハW上のレジスト膜の揮発速度も
ウェハ面内において均一に保たれる。In the exhaust passage 80, there are three straightening plates 82-84.
Since the number of the vent holes 85 is increased so as to go upstream, the exhaust pressure from the downstream side is gradually reduced, and the atmosphere in the processing chamber S is evenly distributed from the ring-shaped exhaust port 81. Can be exhausted. Therefore, the solvent on the wafer W is evacuated uniformly, and the evaporation rate of the resist film on the wafer W is also kept uniform within the wafer surface.
【0063】蓋体61内の整流板73,74の通気孔7
5を斜めに形成したので,供給口72から供給されたガ
スは,整流板73,74を通過するとウェハW外方向側
に向きを変え,排気口81側に流れる。したがって,ウ
ェハW表面付近に気流が形成されることがより確実にな
くなり,ウェハ外縁部の加熱処理が適正に行われる。Vent holes 7 of the current plate 73, 74 in the lid 61
Since 5 is formed obliquely, the gas supplied from the supply port 72 turns to the outer side of the wafer W when passing through the straightening plates 73 and 74, and flows to the exhaust port 81 side. Therefore, the air flow is more reliably prevented from being formed in the vicinity of the surface of the wafer W, and the heat treatment of the outer peripheral portion of the wafer is properly performed.
【0064】整流板73,74に,平坦又は鏡面化処理
を施したので,ウェハW等から発生した不純物が付着し
難く,不純物を排気口81を通じて排出できる。また,
不純物が付着し難いので,メンテナンスの回数を減ら
し,その分装置の稼働率を上げることができる。なお,
不純物を付着し難くする処理として,例えば整流板7
3,74の表面をフッ素化処理し,表面エネルギを低下
させる処理を行ってもよい。なお,このとき整流板7
3,74の表面エネルギは,2.0×10−4N/cm
程度以下であることが好ましい。また,整流板73,7
4の表面にプラズマイオンを打ち込む表面親水化処理を
施すようにしてもよい。Since the rectifying plates 73 and 74 are flattened or mirror-finished, impurities generated from the wafer W or the like are unlikely to adhere to the rectifying plates 73 and 74, and the impurities can be discharged through the exhaust port 81. Also,
Since it is difficult for impurities to adhere, the frequency of maintenance can be reduced and the operating rate of the device can be increased accordingly. In addition,
As a process for making it difficult for impurities to adhere, for example, a straightening plate 7
The surface of 3,74 may be fluorinated to reduce the surface energy. At this time, the current plate 7
The surface energy of 3,74 is 2.0 × 10 −4 N / cm.
It is preferably not more than the degree. In addition, the straightening plates 73, 7
The surface of 4 may be subjected to a surface hydrophilization treatment in which plasma ions are implanted.
【0065】上記実施の形態で記載した整流板73,7
4の通気孔75は,気流が外方に向くように斜めに設け
られていたが,図11に示すように整流板100の通気
孔101を鉛直方向に開け,通気孔101の出口101
aに,気流をウェハW外方向側に向けて流すガイド部材
102を取り付けるようにしてもよい。ガイド部材10
2は,例えば各通気孔101毎に設けられ,気流の当た
る面が鉛直下方向からウェハWの外方向側に傾斜してい
る。かかる場合においても,処理室S上部から供給され
たガスが,蓋体61の側部61a側に向かって流れ,気
流がウェハW表面付近を通過することがないので,気流
による加熱処理への影響がなく,ウェハW外縁部におい
ても膜厚の均一なレジスト膜が形成される。The current plate 73, 7 described in the above embodiment
The ventilation hole 75 of No. 4 was provided obliquely so that the air flow was directed outward, but as shown in FIG. 11, the ventilation hole 101 of the straightening plate 100 was opened in the vertical direction and the outlet 101 of the ventilation hole 101 was opened.
A guide member 102 that causes the air flow to flow toward the outer side of the wafer W may be attached to a. Guide member 10
2 is provided, for example, for each vent hole 101, and the surface on which the air flow hits is inclined from the vertically downward direction to the outer side of the wafer W. Even in such a case, the gas supplied from the upper portion of the processing chamber S flows toward the side portion 61a of the lid 61, and the airflow does not pass near the surface of the wafer W. Thus, a resist film having a uniform thickness is formed even on the outer edge of the wafer W.
【0066】上記第1の実施の形態では,気流をウェハ
Wに直接当てないようにして,ウェハW外縁部の熱処理
を均一に行っていたが,均一で多量の気流をウェハW外
縁部に積極的に供給することによって,ウェハW外縁部
の均一な熱処理を行ってもよい。以下,かかる実施の形
態を第2の実施の形態として記載する。図12は,第2
の実施の形態にかかるプリベーキング装置120の構成
を示す縦断面の説明図である。In the first embodiment described above, the heat treatment of the outer edge of the wafer W is performed uniformly so that the airflow is not directly applied to the wafer W. However, a uniform and large amount of airflow is positively applied to the outer edge of the wafer W. May be uniformly supplied to perform uniform heat treatment on the outer edge of the wafer W. Hereinafter, such an embodiment will be described as a second embodiment. FIG. 12 shows the second
FIG. 3 is an explanatory view of a vertical section showing the configuration of the pre-baking apparatus 120 according to the embodiment of the present invention.
【0067】プリベーキング装置120は,そのケーシ
ング121内に,下面が開口した略円筒状の蓋体122
と,蓋体122と一体となって処理室Sを形成する略円
筒状のサポートリング123を備えている。サポートリ
ング123は,第1の実施の形態と同様に熱板124を
収容できるものである。例えばサポートリング123の
上面には,処理室S内の雰囲気を排気する排気口125
が設けられている。蓋体122の上面部である天板12
6には,ガスの供給口127が設けられている。供給口
127から供給されたガスは,サポートリング123の
排気口125から排気できる。The pre-baking device 120 has a casing 121 in which a substantially cylindrical lid 122 having an open bottom surface is formed.
And a substantially cylindrical support ring 123 that forms the processing chamber S integrally with the lid 122. The support ring 123 is capable of accommodating the hot plate 124 as in the first embodiment. For example, on the upper surface of the support ring 123, an exhaust port 125 for exhausting the atmosphere in the processing chamber S
Is provided. The top plate 12 that is the upper surface of the lid 122
6, a gas supply port 127 is provided. The gas supplied from the supply port 127 can be exhausted from the exhaust port 125 of the support ring 123.
【0068】蓋体122の内側であって熱板124に対
向する位置には,2つの円形状の整流板128,129
が設けられている。2つの整流板128,129は,上
下に並設されており,例えば第1の整流板128が下
側,第2の整流板129が上側に配置されている。第1
の整流板128には,図13に示すように複数の通気孔
130が設けられている。第1の整流板128の中央部
から外縁部に行くにつれ通気孔130の数が増加するよ
うに,通気孔130は形成されている。第2の整流板1
29にも,第1の整流板128と同様に複数の通気孔1
30が開けられ,中央部から外縁部側に行くにつれて通
気孔130の数が多くなり,開口率が高くなるように通
気孔130が形成されている。なお,このプリベーキン
グ装置120には,第1の実施の形態と同様の構成を有
する昇降ピン131,昇降機構132,Oリング13
3,ガス供給部134,ヒータ135,搬入出口136
等が設けられている。Two circular rectifying plates 128 and 129 are provided inside the lid 122 and at positions facing the heat plate 124.
Is provided. The two straightening vanes 128 and 129 are vertically arranged side by side. For example, the first straightening vane 128 is arranged on the lower side and the second straightening vane 129 is arranged on the upper side. First
A plurality of vent holes 130 are provided in the current plate 128 of FIG. The ventilation holes 130 are formed so that the number of the ventilation holes 130 increases from the central portion of the first straightening vane 128 toward the outer edge portion. Second straightening plate 1
29 also has a plurality of ventilation holes 1 similar to the first straightening vane 128.
The vent holes 130 are formed so that the number of the vent holes 130 is increased from the central part toward the outer edge part side and the opening ratio is increased. The pre-baking device 120 includes an elevating pin 131, an elevating mechanism 132, and an O-ring 13 having the same configuration as that of the first embodiment.
3, gas supply unit 134, heater 135, carry-in / out port 136
Etc. are provided.
【0069】そして,加熱処理の際には,天板126の
供給口127から処理室S内にガスが導入される。当該
ガスは,第2の整流板129,第1の整流板128を順
に通過し,ウェハW上に供給される。このとき第1の整
流板128,第2の整流板129の外縁部側の開口率が
高いので,ガスがウェハW外縁部に対して十分かつ均等
に供給される。ウェハWの表面付近を通過したガスは,
ウェハW外方の排気口125から排気される。なお,ウ
ェハWの一連の加熱処理プロセスは,上記第1の実施の
形態と同様であるので省略する。At the time of heat treatment, gas is introduced into the processing chamber S from the supply port 127 of the top plate 126. The gas passes through the second straightening plate 129 and the first straightening plate 128 in order and is supplied onto the wafer W. At this time, since the opening ratios of the first rectifying plate 128 and the second rectifying plate 129 on the outer edge side are high, the gas is sufficiently and uniformly supplied to the outer edge of the wafer W. The gas that has passed near the surface of the wafer W is
The gas is exhausted from the exhaust port 125 outside the wafer W. Note that a series of heat treatment processes for the wafer W is the same as that in the first embodiment described above, and will be omitted.
【0070】この第2の実施の形態によれば,第1及び
第2の整流板128,129の外縁部側の開口率が高い
ので,多量のガスがウェハW外縁部に均等に供給され
る。この結果,ウェハW外縁部においても溶剤が均一に
揮発し,ウェハW外縁部に凹凸のないレジスト膜を形成
することができる。なお,整流板の外縁部に行くにした
がって通気孔の径を次第に大きくすることによって,整
流板の外縁部側の開口率を高くするようにしてもよい。According to the second embodiment, since the opening ratios of the first and second straightening vanes 128 and 129 on the outer edge side are high, a large amount of gas is uniformly supplied to the outer edge of the wafer W. . As a result, the solvent evenly evaporates even at the outer edge of the wafer W, and a resist film having no unevenness can be formed on the outer edge of the wafer W. The opening ratio of the outer edge of the straightening vane may be increased by gradually increasing the diameter of the vent hole toward the outer edge of the straightening vane.
【0071】また,前記第2の実施の形態において,整
流板の通気孔の開口率を変えずに,通気孔の向きを変え
ることによって,ウェハW外縁部に多量のガスを均等に
供給するようにしてもよい。このような場合,図14に
示すように整流板140の通気孔141が,鉛直下方向
からウェハW外縁部側に向けて斜めに開けられる。こう
することによって,通気孔140を通過したガスがウェ
ハW外縁部に多量に供給される。この結果,ウェハW外
縁部の溶剤が均一に揮発し,ウェハW外縁部においても
所定膜厚の均一なレジスト膜が形成される。In the second embodiment, a large amount of gas is evenly supplied to the outer edge of the wafer W by changing the direction of the ventilation hole without changing the opening ratio of the ventilation hole of the straightening plate. You may In such a case, as shown in FIG. 14, the ventilation hole 141 of the current plate 140 is formed obliquely from the vertically downward direction toward the outer edge of the wafer W. By doing so, a large amount of gas that has passed through the ventilation holes 140 is supplied to the outer edge portion of the wafer W. As a result, the solvent on the outer edge of the wafer W is volatilized uniformly, and a uniform resist film having a predetermined film thickness is formed also on the outer edge of the wafer W.
【0072】次に,処理室S内にガスを供給しない第3
の実施の形態について説明する。図15に示すように第
3の実施の形態にかかるプリベーキング装置150は,
そのケーシング151内に,蓋体152とサポートリン
グ153を備えている。蓋体152は,下面が開口した
略円筒状である。サポートリング153は,例えば上下
面が開口した略円筒状であり,その内側に熱板154を
収容することによって下面が閉口している。蓋体152
の下端部152aとサポートリング153上端部153
aは,対応しており,蓋体152を下降させ,蓋体15
2の下端部152aとサポートリング153の上端部1
53aを合致させることによって処理室Sを形成でき
る。蓋体152の下端部152aとサポートリングの上
端部153aとの間には,例えばOリング155が設け
られており,処理室Sを密閉できる。Next, a third gas is not supplied into the processing chamber S.
The embodiment will be described. As shown in FIG. 15, the prebaking apparatus 150 according to the third embodiment is
Inside the casing 151, a lid 152 and a support ring 153 are provided. The lid body 152 has a substantially cylindrical shape with an open lower surface. The support ring 153 has, for example, a substantially cylindrical shape whose upper and lower surfaces are open, and the lower surface is closed by accommodating the heat plate 154 inside thereof. Lid 152
Lower end portion 152a and support ring 153 upper end portion 153
a corresponds to that, the lid 152 is lowered, and the lid 15
2 lower end 152a and support ring 153 upper end 1
The processing chamber S can be formed by matching 53a. An O-ring 155, for example, is provided between the lower end portion 152a of the lid body 152 and the upper end portion 153a of the support ring, so that the processing chamber S can be sealed.
【0073】熱板154には,第1の実施の形態と同様
にヒータ156が内蔵されており,熱板154を所定温
度に加熱し維持できる。蓋体152の上面部である天板
157と熱板154との距離Dは,熱板154を所定温
度に維持した際に処理室S内に自然対流が発生しない距
離,例えば8mm以下に調整されている。また,蓋体1
52の内側表面は,例えば表面粗さ(Ra)が6.3μ
m程度の粗面化処理が施されており,不純物が付着し易
い状態になっている。なお,熱板154には,第1の実
施の形態と同様の構成を有する昇降ピン158,昇降機
構159が設けられており,熱板154上のウェハWを
昇降できる。また,ケーシング151の側面には,ウェ
ハWの搬入出口160が設けられている。As in the first embodiment, the heater 156 is built in the heating plate 154, and the heating plate 154 can be heated and maintained at a predetermined temperature. The distance D between the top plate 157, which is the upper surface of the lid 152, and the heating plate 154 is adjusted to a distance at which natural convection does not occur in the processing chamber S when the heating plate 154 is maintained at a predetermined temperature, for example, 8 mm or less. ing. Also, the lid 1
The inner surface of 52 has a surface roughness (Ra) of 6.3 μ, for example.
A roughening treatment of about m is performed, and impurities are easily attached. The hot plate 154 is provided with lift pins 158 and lift mechanisms 159 having the same configurations as in the first embodiment, and the wafer W on the hot plate 154 can be lifted and lowered. A loading / unloading port 160 for the wafer W is provided on the side surface of the casing 151.
【0074】以上のように構成されたプリベーキング装
置150の作用について説明すると,先ず,主搬送装置
13によってケーシング151内に搬入されたウェハW
が,予め上昇して待機していた昇降ピン158に受け渡
される。次に蓋体152が下降し,処理室Sが形成され
る。続いて昇降ピン158が下降しウェハWが熱板15
4に載置され,所定時間加熱される。このときウェハW
等から発生した不純物は,蓋体152の表面に吸着す
る。そして,所定時間が経過すると,ウェハWが上昇さ
れ,その後蓋体152が上昇する。こうして処理室Sが
開放されると,ウェハWは主搬送装置13に受け渡さ
れ,ケーシング151外に搬出されて,一連の加熱処理
が終了する。The operation of the pre-baking device 150 having the above-described structure will be described. First, the wafer W carried into the casing 151 by the main carrier device 13.
However, it is transferred to the elevating pin 158 which has been raised and waited in advance. Next, the lid body 152 descends to form the processing chamber S. Then, the lifting pins 158 descend and the wafer W moves to the hot plate 15.
It is placed on No. 4 and heated for a predetermined time. At this time the wafer W
Impurities generated from the like are adsorbed on the surface of the lid body 152. Then, after a lapse of a predetermined time, the wafer W is raised, and then the lid body 152 is raised. When the processing chamber S is opened in this way, the wafer W is transferred to the main carrier 13 and carried out of the casing 151, and a series of heat treatments is completed.
【0075】かかる第3の実施の形態によれば,前記第
1,第2の実施の形態のようにウェハWの加熱中に気流
が形成されないので,気流によるウェハ外縁部への悪影
響を確実に防止できる。また,蓋体152の天板157
の高さを調節し,熱板154と天板157との温度差で
生じる自然対流を防止したので,処理室S内の雰囲気を
完全に定常状態にすることができる。さらに,蓋体15
2の内側を粗面化処理したので,処理中にウェハWから
発生した不純物を吸着させ,不純物がウェハWに再付着
することを抑制できる。なお,プリベーキング装置15
0に,前記第1の実施の形態と同様のガスの供給手段,
排気手段を設けて,ウェハWの加熱の終了した後に処理
室S内の雰囲気を換気してもよい。According to the third embodiment, unlike the first and second embodiments, the air flow is not formed during the heating of the wafer W, so that the adverse effect of the air flow on the outer edge portion of the wafer is ensured. It can be prevented. Also, the top plate 157 of the lid body 152
Since the natural convection caused by the temperature difference between the heating plate 154 and the top plate 157 is prevented by adjusting the height of the heating plate 154, the atmosphere in the processing chamber S can be completely brought to a steady state. Furthermore, the lid 15
Since the inner surface of 2 is roughened, it is possible to adsorb impurities generated from the wafer W during the processing and prevent the impurities from adhering to the wafer W again. In addition, the pre-baking device 15
0, the same gas supply means as in the first embodiment,
Exhaust means may be provided to ventilate the atmosphere in the processing chamber S after the heating of the wafer W is completed.
【0076】この第3の実施の形態において,蓋体15
2の内側表面に粗面化処理を施すことによって蓋体15
2に不純物を付着し易くしていたが,他の方法によって
不純物を付着し易くしてもよい。例えば蓋体152の内
側表面に表面エネルギを上昇させる処理を施してもよ
い。また,蓋体152自体の材質に,鉄等の表面エネル
ギが高いものを用いてもよい。なお,このときの表面エ
ネルギは,2.0×10 −2N/cm以上であることが
望ましい。また,蓋体152表面を光触媒で被膜し,洗
浄時に汚れを落とし易いようにしてもよい。In the third embodiment, the lid 15
By applying a roughening treatment to the inner surface of 2, the lid 15
I made it easy to attach impurities to 2, but by other methods
Impurities may be easily attached. For example, inside the lid 152
The side surface may be treated to increase the surface energy.
Yes. Further, the material of the lid body 152 itself is made of surface energy such as iron.
You may use the thing with high Gi. In addition, the surface d
Nergi is 2.0 × 10 -2N / cm or more
desirable. The surface of the lid 152 is coated with a photocatalyst and washed.
You may make it easy to remove dirt at the time of cleaning.
【0077】第3の実施の形態では,天板156の高さ
を調節して処理室S内の自然対流の発生を防止していた
が,蓋体152の温度を調節して自然対流の発生を防止
してもよい。例えば図16に示すように蓋体170の天
板171に,給電により発熱するヒータ172が内蔵さ
れる。ヒータ172の電源173は,例えば制御部17
4により制御されており,電源173の供給電圧を変え
ることによってヒータ172の発熱量を調節して,天板
171温度を制御できる。なお,この実施の形態におい
ては,ヒータ172,電源173及び制御部174が温
度調節手段に相当する。In the third embodiment, the height of the top plate 156 is adjusted to prevent the occurrence of natural convection in the processing chamber S. However, the temperature of the lid 152 is adjusted to generate natural convection. May be prevented. For example, as shown in FIG. 16, the top plate 171 of the lid 170 has a built-in heater 172 that generates heat by power supply. The power source 173 of the heater 172 is, for example, the control unit 17
The temperature of the top plate 171 can be controlled by adjusting the heat generation amount of the heater 172 by changing the supply voltage of the power source 173. In addition, in this embodiment, the heater 172, the power source 173, and the control unit 174 correspond to the temperature adjusting means.
【0078】そして,ウェハWの加熱中は,天板171
を熱板154と同じ温度に調整し維持する。こうするこ
とによって,熱板154と天板171との温度差が無く
なり,処理室S内に自然対流が起こることが防止され
る。During heating of the wafer W, the top plate 171 is
Is adjusted and maintained at the same temperature as the hot plate 154. By doing so, the temperature difference between the heating plate 154 and the top plate 171 is eliminated, and natural convection in the processing chamber S is prevented.
【0079】なお,本発明の実施の形態の一例について
説明したが,本発明はこの例に限らず種々の態様を採り
うるものである。例えば本発明を,プリベーキング装置
以外の他の熱処理装置,例えばポストエクスポージャー
ベーキング装置,ポストベーキング装置,クーリング装
置等にも適用できる。また,基板を上記ウェハWに限定
せず,方形の他の基板,たとえばLCD基板を熱処理す
る熱処理装置に対しても適用可能である。Although an example of the embodiment of the present invention has been described, the present invention is not limited to this example but can take various forms. For example, the present invention can be applied to a heat treatment apparatus other than the pre-baking apparatus, such as a post-exposure baking apparatus, a post-baking apparatus, and a cooling apparatus. Further, the substrate is not limited to the above-mentioned wafer W, and can be applied to a heat treatment apparatus for heat-treating another square substrate such as an LCD substrate.
【0080】[0080]
【発明の効果】本発明によれば,不安定な気流が基板の
外縁部に悪影響を及ぼすことを防止できるので,基板外
縁部の熱処理が適切に行われ,G/W歩留まりの向上が
図られる。According to the present invention, the unstable air flow can be prevented from adversely affecting the outer edge portion of the substrate, so that the heat treatment of the outer edge portion of the substrate is appropriately performed, and the G / W yield is improved. .
【図1】第1の実施の形態にかかるプリベーキング装置
を備えた塗布現像処理システムの平面図である。FIG. 1 is a plan view of a coating and developing treatment system including a pre-baking device according to a first embodiment.
【図2】図1の塗布現像処理システムの正面図である。FIG. 2 is a front view of the coating and developing treatment system of FIG.
【図3】図1の塗布現像処理システムの背面図である。FIG. 3 is a rear view of the coating and developing treatment system of FIG.
【図4】プリベーキング装置の構成を示す縦断面の説明
図である。FIG. 4 is an explanatory view of a vertical section showing the configuration of the prebaking apparatus.
【図5】第1の整流板の平面図である。FIG. 5 is a plan view of a first straightening vane.
【図6】第1の整流板の縦断面図である。FIG. 6 is a vertical cross-sectional view of a first straightening vane.
【図7】第2の整流板の平面図である。FIG. 7 is a plan view of a second rectifying plate.
【図8】第2の整流板の縦断面図である。FIG. 8 is a vertical cross-sectional view of a second rectifying plate.
【図9】蓋体の横断面図である。FIG. 9 is a cross-sectional view of the lid body.
【図10】蓋体の構成を示す斜視図である。FIG. 10 is a perspective view showing a configuration of a lid body.
【図11】整流板の他の構成例を示す縦断面図である。FIG. 11 is a vertical cross-sectional view showing another configuration example of the current plate.
【図12】第2の実施の形態のプリベーキング装置の構
成を示す縦断面の説明図である。FIG. 12 is an explanatory view of a vertical cross section showing the configuration of the prebaking apparatus according to the second embodiment.
【図13】第1の整流板の平面図である。FIG. 13 is a plan view of a first rectifying plate.
【図14】整流板の他の構成例を示す縦断面図である。FIG. 14 is a vertical cross-sectional view showing another configuration example of the current plate.
【図15】第3の実施の形態のプリベーキング装置の構
成を示す縦断面の説明図である。FIG. 15 is an explanatory view of a vertical cross section showing the configuration of the prebaking apparatus according to the third embodiment.
【図16】図15のプリベーキング装置の他の構成例を
示す縦断面の説明図である。16 is an explanatory view of a vertical cross section showing another configuration example of the prebaking apparatus of FIG.
【図17】従来の加熱処理装置の構成の概略を示す縦断
面の説明図である。FIG. 17 is an explanatory view of a vertical cross section showing the outline of the configuration of a conventional heat treatment apparatus.
1 塗布現像処理システム 33 プリベーキング装置 61 蓋体 61a 側部 62 サポートリング 63 熱板 70 天板 73 第1の整流板 74 第2の整流板 80 排気通路 81 排気口 87 不純物回収部 S 処理室 W ウェハ 1 Coating and developing system 33 Pre-baking equipment 61 Lid 61a side part 62 Support ring 63 hot plate 70 Top plate 73 First straightening plate 74 Second rectifying plate 80 exhaust passage 81 Exhaust port 87 Impurity Recovery Department S processing room W wafer
Claims (21)
であって,基板を載置し熱処理する熱処理板と,この熱
処理板を上方から覆い,処理室の一部を形成する蓋体
と,を備え,前記蓋体は,上面部と側部を有し下面側が
開口した略筒状の形態を有し,前記上面部は,前記熱処
理板上の基板に対向し,前記上面部には,処理室内に気
体を供給する供給口が設けられ,前記蓋体の側部であっ
て前記熱処理板上の基板よりも高い位置には,前記処理
室内の気体を排気するための排気口が設けられているこ
とを特徴とする,熱処理装置。1. A heat treatment apparatus for heat-treating a substrate in a processing chamber, comprising: a heat treatment plate on which a substrate is placed and heat treatment; and a lid which covers the heat treatment plate from above and forms a part of the treatment chamber. The lid has a substantially cylindrical shape having an upper surface portion and side portions and an opening on a lower surface side, the upper surface portion faces a substrate on the heat treatment plate, and the upper surface portion has a processing portion. A supply port for supplying a gas is provided in the chamber, and an exhaust port for exhausting the gas in the processing chamber is provided at a side portion of the lid and higher than the substrate on the heat treatment plate. Heat treatment equipment characterized by being
体の側部内を通る排気通路と,前記排気通路を通過した
気体中の不純物を回収する不純物回収部と,を備えてい
ることを特徴とする,請求項1に記載の熱処理装置。2. The lid body includes an exhaust passage communicating with the exhaust port and passing through a side portion of the lid body, and an impurity collecting portion for collecting impurities in a gas passing through the exhaust passage. The heat treatment apparatus according to claim 1, wherein the heat treatment apparatus is a heat treatment apparatus.
有し,前記内周壁と外周壁との間には,隙間が形成され
ており,当該隙間が,前記排気通路になっていることを
特徴とする,請求項2に記載の熱処理装置。3. A side portion of the lid has an inner peripheral wall and an outer peripheral wall, and a gap is formed between the inner peripheral wall and the outer peripheral wall, and the gap is formed in the exhaust passage. The heat treatment apparatus according to claim 2, wherein
自在であり,少なくとも内周壁又は外周壁を取り外すこ
とによって,前記排気通路が露出可能であることを特徴
とする,請求項3に記載の熱処理装置。4. The inner peripheral wall and the outer peripheral wall are detachable from each other, and the exhaust passage can be exposed by removing at least the inner peripheral wall or the outer peripheral wall. Heat treatment equipment.
られており,前記排気用整流板には,気体が通過する通
気孔が設けられていることを特徴とする,請求項2,3
又は4のいずれかに記載の熱処理装置。5. The exhaust rectifying plate is provided in the exhaust passage, and the exhaust rectifying plate is provided with a vent hole through which gas passes. Three
Or the heat treatment apparatus according to any one of 4 above.
って複数設けられ,前記排気用整流板の通気孔による開
口率は,上流側に近づくにつれて高くなっていることを
特徴とする,請求項5に記載の熱処理装置。6. A plurality of the exhaust rectifying plates are provided along the exhaust passage, and an opening ratio of the exhaust rectifying plates due to the ventilation holes is increased toward the upstream side. The heat treatment apparatus according to claim 5.
前記熱処理板上の基板との間には,当該基板に対向する
整流板が設けられており,前記整流板は,複数の通気孔
を有し,前記整流板の通気孔は,前記上面部側から流入
した気体が鉛直下方向よりも径方向に沿って基板の外方
側に向いて流出するように斜めに形成されていることを
特徴とする,請求項1,2,3,4,5又は6のいずれ
かに記載の熱処理装置。7. A rectifying plate facing the substrate is provided inside the lid and between the upper surface portion and the substrate on the heat treatment plate, and the rectifying plate has a plurality of rectifying plates. The straightening plate has a vent hole, and the vent hole is formed obliquely so that the gas flowing in from the upper surface side flows out toward the outer side of the substrate along the radial direction rather than the vertically downward direction. The heat treatment apparatus according to any one of claims 1, 2, 3, 4, 5 and 6, characterized in that
前記熱処理板上の基板との間には,前記基板に対向する
整流板が設けられており,前記整流板には,複数の通気
孔が設けられており,前記整流板の通気孔の出口には,
通過した気体を鉛直下方向よりも径方向に沿って基板の
外方向側に向けて流すガイド部材が取り付けられている
ことを特徴とする,請求項1,2,3,4,5又は6の
いずれかに記載の熱処理装置。8. A rectifying plate facing the substrate is provided inside the lid and between the upper surface portion and the substrate on the heat treatment plate, and the rectifying plate has a plurality of rectifying plates. Ventilation holes are provided at the outlet of the ventilation holes of the rectifying plate.
7. A guide member for flowing the passing gas toward the outer side of the substrate along the radial direction rather than the vertically downward direction is attached, and the guide member according to claim 1, 2, 3, 4, 5 or 6. The heat treatment apparatus according to any one of claims.
であって,基板を載置し熱処理する熱処理板と,この熱
処理板を上方から覆い,処理室の一部を形成する蓋体
と,を備え,前記蓋体は,上面部と側面部を有し下面側
が開口した略筒状の形態を有し,前記上面部は,前記熱
処理板上の基板に対向し,前記上面部には,処理室内に
気体を供給する供給口が設けられ,前記蓋体の内側であ
って,前記上面部と前記熱処理板上の基板との間には,
前記基板に対向する整流板が設けられており,前記整流
板には,通気孔が設けられており,前記通気孔は,前記
整流板の中央部側から外縁部側に近づくにつれて整流板
の開口率が高くなるように設けられていることを特徴と
する,熱処理装置。9. A heat treatment apparatus for heat-treating a substrate in a processing chamber, comprising: a heat treatment plate on which a substrate is placed and heat treatment; and a lid which covers the heat treatment plate from above and forms a part of the treatment chamber. The lid has a substantially cylindrical shape having an upper surface portion and a side surface portion and an opening on a lower surface side, the upper surface portion faces a substrate on the heat treatment plate, and the upper surface portion has a processing portion. A supply port for supplying gas is provided in the chamber, and inside the lid, between the upper surface portion and the substrate on the heat treatment plate,
A rectifying plate facing the substrate is provided, and the rectifying plate is provided with a vent hole, and the vent hole is formed in the opening of the rectifying plate from the central portion side of the rectifying plate toward the outer edge portion side. A heat treatment apparatus, characterized by being provided so as to have a high rate.
数設けられ,前記通気孔は,前記整流板の中央部側から
外縁部側に近づくにつれてより多く設けられていること
を特徴とする,請求項9に記載の熱処理装置。10. The straightening vane is provided with a plurality of vent holes having the same diameter, and the vent holes are provided so as to be closer to the outer edge portion side from the central portion side of the straightening vane. The heat treatment apparatus according to claim 9, wherein
置であって,基板を載置し熱処理する熱処理板と,この
熱処理板を上方から覆い,処理室の一部を形成する蓋体
と,を備え,前記蓋体は,上面部と側部を有し下面側が
開口した略筒状の形態を有し,前記上面部は,前記熱処
理板上の基板に対向し,前記上面部には,処理室内に気
体を供給する供給口が設けられ,前記蓋体の内側であっ
て前記上面部と前記熱処理板上の基板との間には,前記
基板に対向する整流板が設けられており,前記整流板
は,通気孔を有し,前記通気孔は,前記上面部側から流
入した気体が鉛直下方向よりも基板の外縁部側に向いて
流出するように斜めに形成されていることを特徴とす
る,熱処理装置。11. A heat treatment apparatus for heat treating a substrate in a processing chamber, comprising: a heat treatment plate on which a substrate is placed and heat treatment; and a lid which covers the heat treatment plate from above and forms a part of the treatment chamber. The lid has a substantially cylindrical shape having an upper surface portion and side portions and an opening on a lower surface side, the upper surface portion faces a substrate on the heat treatment plate, and the upper surface portion has a processing portion. A supply port for supplying gas is provided in the chamber, and a rectifying plate facing the substrate is provided inside the lid and between the upper surface portion and the substrate on the heat treatment plate. The straightening vane has a vent hole, and the vent hole is formed obliquely so that the gas flowing from the upper surface side flows out toward the outer edge part side of the substrate rather than the vertically downward direction. And heat treatment equipment.
面には,鏡面化処理が施されていることを特徴とする,
請求項7,8,9,10又は11のいずれかに記載の熱
処理装置。12. A mirror surface treatment is applied to at least a surface of the rectifying plate facing the substrate,
The heat treatment apparatus according to claim 7, 8, 9, 10 or 11.
面には,表面エネルギーを低下させる処理が施されてい
ることを特徴とする,請求項7,8,9,10又は11
のいずれかに記載の熱処理装置。13. The surface of at least the surface of the current plate facing the substrate is subjected to a treatment for reducing surface energy, 7, 8, 9, 10 or 11.
The heat treatment apparatus according to any one of 1.
面には,親水化処理が施されていることを特徴とする,
請求項7,8,9,10又は11のいずれかに記載の熱
処理装置。14. A hydrophilic treatment is applied to at least a surface of the current plate facing the substrate.
The heat treatment apparatus according to claim 7, 8, 9, 10 or 11.
置であって,基板を載置し熱処理する熱処理板と,この
熱処理板を上方から覆い,処理室の一部を形成する蓋体
と,を備え,前記蓋体は,上面部と側部を有し下面側が
開口した略筒状の形態を有し,前記上面部は,前記熱処
理板上の基板に対向し,前記上面部と熱処理板上の基板
との温度差によって処理室内に自然対流が発生しないよ
うに,前記上面部と前記基板との距離が調整されてお
り,前記蓋体の内側には,処理室内の雰囲気の不純物に
対する付着性を向上する表面処理が施されていることを
特徴とする,熱処理装置。15. A heat treatment apparatus for heat treating a substrate in a processing chamber, comprising: a heat treatment plate on which a substrate is placed and heat treatment; and a lid which covers the heat treatment plate from above and forms a part of the treatment chamber. The lid has a substantially cylindrical shape having an upper surface portion and side portions and an opening on the lower surface side, the upper surface portion facing the substrate on the heat treatment plate, and the upper surface portion and the heat treatment plate on the heat treatment plate. The distance between the upper surface and the substrate is adjusted so that natural convection does not occur in the processing chamber due to the temperature difference between the substrate and the substrate. A heat treatment apparatus characterized by being subjected to a surface treatment for improving the heat treatment.
置であって,基板を載置し熱処理する熱処理板と,この
熱処理板を上方から覆い,処理室の一部を形成する蓋体
と,を備え,前記蓋体は,上面部と側部を有し下面側が
開口した略筒状の形態を有し,前記上面部は,前記熱処
理板上の基板に対向し,前記上面部には,当該上面部の
温度を前記熱処理板の温度と同じ温度に調整する温度調
節手段が設けられており,前記蓋体の内側には,処理室
内の雰囲気の不純物に対する付着性を向上する表面処理
が施されていることを特徴とする,熱処理装置。16. A heat treatment apparatus for heat treating a substrate in a processing chamber, comprising: a heat treatment plate on which a substrate is placed and heat treatment; and a lid which covers the heat treatment plate from above and forms a part of the treatment chamber. The lid has a substantially cylindrical shape having an upper surface portion and side portions and an opening on the lower surface side, the upper surface portion faces a substrate on the heat treatment plate, and the upper surface portion is Temperature adjusting means for adjusting the temperature of the upper surface to the same temperature as the temperature of the heat treatment plate is provided, and the inside of the lid is subjected to a surface treatment for improving the adhesion of the atmosphere in the processing chamber to impurities. The heat treatment device characterized by the above.
表面処理は,表面エネルギーを上昇させる処理であるこ
とを特徴とする,請求項15又は16のいずれかに記載
の熱処理装置。17. The heat treatment apparatus according to claim 15, wherein the surface treatment for improving the adhesiveness to the impurities is a treatment for increasing the surface energy.
表面処理は,粗面化処理であることを特徴とする,請求
項15又は16のいずれかに記載の熱処理装置。18. The heat treatment apparatus according to claim 15, wherein the surface treatment for improving the adhesion to impurities is a roughening treatment.
載置して熱処理する熱処理方法であって,処理室上部か
ら導入された気体を,前記熱処理板上の基板の外方であ
って基板より高い位置から排気しながら,熱処理を行う
ことを特徴とする,熱処理方法。19. A heat treatment method of placing a substrate on a heat treatment plate in a processing chamber to perform heat treatment, wherein the gas introduced from the upper portion of the treatment chamber is outside the substrate on the heat treatment plate and is from the substrate. A heat treatment method characterized by performing heat treatment while exhausting from a high position.
された処理室内において,基板を所定温度に維持された
熱処理板に載置して熱処理を行う熱処理方法であって,
処理室内に自然対流が起こらないように,前記基板に対
向する蓋体の上面部と熱処理板との距離を調整し,処理
室内に気流を形成しないで熱処理を行うことを特徴とす
る,熱処理方法。20. A heat treatment method for performing heat treatment by placing a substrate on a heat treatment plate maintained at a predetermined temperature in a treatment chamber formed by a lid covering a substrate from above,
A heat treatment method, characterized in that the heat treatment is performed without forming an air flow in the processing chamber by adjusting the distance between the heat treatment plate and the upper surface of the lid facing the substrate so that natural convection does not occur in the processing chamber. .
された処理室内において,基板を所定温度に維持された
熱処理板に載置して熱処理を行う熱処理方法であって,
処理室内に自然対流が起こらないように,前記基板に対
向する前記蓋体の上面部の温度を,熱処理板と同じ温度
になるように調整し,処理室内に気流を形成しないで熱
処理を行うことを特徴とする,熱処理方法。21. A heat treatment method of performing heat treatment by placing a substrate on a heat treatment plate maintained at a predetermined temperature in a treatment chamber formed by a lid that covers the substrate from above,
In order to prevent natural convection in the processing chamber, the temperature of the upper surface of the lid facing the substrate is adjusted to the same temperature as that of the heat treatment plate, and heat treatment is performed without forming an air flow in the processing chamber. A heat treatment method characterized by:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002122401A JP4043831B2 (en) | 2002-04-24 | 2002-04-24 | Heat treatment equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002122401A JP4043831B2 (en) | 2002-04-24 | 2002-04-24 | Heat treatment equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2003318091A true JP2003318091A (en) | 2003-11-07 |
JP4043831B2 JP4043831B2 (en) | 2008-02-06 |
Family
ID=29538025
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002122401A Expired - Lifetime JP4043831B2 (en) | 2002-04-24 | 2002-04-24 | Heat treatment equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4043831B2 (en) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100557761B1 (en) | 2004-10-22 | 2006-03-07 | 삼성전자주식회사 | Processing chamber for making semiconductor |
JP2007194269A (en) * | 2006-01-17 | 2007-08-02 | Tokyo Electron Ltd | Heat treatment apparatus |
JP2007201037A (en) * | 2006-01-25 | 2007-08-09 | Tokyo Electron Ltd | Heat treatment equipment, heat treatment method, control program and computer readable storage medium |
JP2008028177A (en) * | 2006-07-21 | 2008-02-07 | Nippon Dennetsu Co Ltd | Apparatus for heating substrate |
JP2008521223A (en) * | 2004-11-17 | 2008-06-19 | ステアーグ ハマテヒ アクチエンゲゼルシャフト | Method and apparatus for heat treating a substrate |
JP2008311395A (en) * | 2007-06-14 | 2008-12-25 | Tokyo Ohka Kogyo Co Ltd | Heat treatment apparatus |
JP2009099861A (en) * | 2007-10-18 | 2009-05-07 | Fenwall Controls Of Japan Ltd | Semiconductor processing unit and semiconductor manufacturing apparatus |
JP2009188411A (en) * | 2009-03-06 | 2009-08-20 | Tokyo Electron Ltd | Silylation processing method, silylation processing apparatus, and etching processing system |
JP2009260343A (en) * | 2008-04-16 | 2009-11-05 | Asml Netherlands Bv | Lithographic apparatus |
US20110030737A1 (en) * | 2009-08-07 | 2011-02-10 | Tokyo Electron Limited | Liquid processing apparatus for substrate and liquid processing method |
KR20190004494A (en) * | 2017-07-04 | 2019-01-14 | 세메스 주식회사 | Apparatus for treating substrate |
JP2019005563A (en) * | 2017-06-26 | 2019-01-17 | 芝浦メカトロニクス株式会社 | Tablet printing apparatus |
JP2020129607A (en) * | 2019-02-08 | 2020-08-27 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
CN114563933A (en) * | 2020-11-27 | 2022-05-31 | 沈阳芯源微电子设备股份有限公司 | A dish lid structure for wafer toasts unit |
-
2002
- 2002-04-24 JP JP2002122401A patent/JP4043831B2/en not_active Expired - Lifetime
Cited By (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100557761B1 (en) | 2004-10-22 | 2006-03-07 | 삼성전자주식회사 | Processing chamber for making semiconductor |
JP4922180B2 (en) * | 2004-11-17 | 2012-04-25 | ステアーグ ハマテヒ アクチエンゲゼルシャフト | Method and apparatus for heat treating a substrate |
JP2008521223A (en) * | 2004-11-17 | 2008-06-19 | ステアーグ ハマテヒ アクチエンゲゼルシャフト | Method and apparatus for heat treating a substrate |
JP4601070B2 (en) * | 2006-01-17 | 2010-12-22 | 東京エレクトロン株式会社 | Heat treatment equipment |
JP2007194269A (en) * | 2006-01-17 | 2007-08-02 | Tokyo Electron Ltd | Heat treatment apparatus |
US7802986B2 (en) | 2006-01-17 | 2010-09-28 | Tokyo Electron Limited | Thermal processing apparatus |
JP2007201037A (en) * | 2006-01-25 | 2007-08-09 | Tokyo Electron Ltd | Heat treatment equipment, heat treatment method, control program and computer readable storage medium |
US7980003B2 (en) | 2006-01-25 | 2011-07-19 | Tokyo Electron Limited | Heat processing apparatus and heat processing method |
KR101176238B1 (en) * | 2006-01-25 | 2012-08-22 | 도쿄엘렉트론가부시키가이샤 | Heating process apparatus, heating process method, and computer readable storage medium |
US8782918B2 (en) | 2006-01-25 | 2014-07-22 | Tokyo Electron Limited | Heat processing apparatus and heat processing method |
JP4527670B2 (en) * | 2006-01-25 | 2010-08-18 | 東京エレクトロン株式会社 | Heat treatment apparatus, heat treatment method, control program, and computer-readable storage medium |
JP2008028177A (en) * | 2006-07-21 | 2008-02-07 | Nippon Dennetsu Co Ltd | Apparatus for heating substrate |
JP2008311395A (en) * | 2007-06-14 | 2008-12-25 | Tokyo Ohka Kogyo Co Ltd | Heat treatment apparatus |
JP2009099861A (en) * | 2007-10-18 | 2009-05-07 | Fenwall Controls Of Japan Ltd | Semiconductor processing unit and semiconductor manufacturing apparatus |
JP2009260343A (en) * | 2008-04-16 | 2009-11-05 | Asml Netherlands Bv | Lithographic apparatus |
US10649341B2 (en) | 2008-04-16 | 2020-05-12 | Asml Netherlands B.V. | Lithographic apparatus |
US9465302B2 (en) | 2008-04-16 | 2016-10-11 | Asml Netherlands B.V. | Lithographic apparatus |
US9036127B2 (en) | 2008-04-16 | 2015-05-19 | Asml Netherlands B.V. | Lithographic apparatus |
JP2009188411A (en) * | 2009-03-06 | 2009-08-20 | Tokyo Electron Ltd | Silylation processing method, silylation processing apparatus, and etching processing system |
US8684014B2 (en) * | 2009-08-07 | 2014-04-01 | Tokyo Electron Limited | Liquid processing apparatus for substrate and liquid processing method |
US20110030737A1 (en) * | 2009-08-07 | 2011-02-10 | Tokyo Electron Limited | Liquid processing apparatus for substrate and liquid processing method |
JP2019005563A (en) * | 2017-06-26 | 2019-01-17 | 芝浦メカトロニクス株式会社 | Tablet printing apparatus |
JP7042164B2 (en) | 2017-06-26 | 2022-03-25 | 芝浦メカトロニクス株式会社 | Tablet printing equipment |
KR20190004494A (en) * | 2017-07-04 | 2019-01-14 | 세메스 주식회사 | Apparatus for treating substrate |
KR102366180B1 (en) * | 2017-07-04 | 2022-02-22 | 세메스 주식회사 | Apparatus for treating substrate |
JP2020129607A (en) * | 2019-02-08 | 2020-08-27 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
JP7208813B2 (en) | 2019-02-08 | 2023-01-19 | 東京エレクトロン株式会社 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
CN114563933A (en) * | 2020-11-27 | 2022-05-31 | 沈阳芯源微电子设备股份有限公司 | A dish lid structure for wafer toasts unit |
Also Published As
Publication number | Publication date |
---|---|
JP4043831B2 (en) | 2008-02-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI789048B (en) | Substrate processing method, substrate processing system, and computer-readable storage medium | |
JP3910821B2 (en) | Substrate processing equipment | |
JP3616748B2 (en) | Development processing method, development processing apparatus, and processing apparatus | |
JP4328667B2 (en) | Method for improving surface roughness of substrate processing film and substrate processing apparatus | |
KR20060028683A (en) | Method for improving surface roughness of processed film of substrate and apparatus for processing substrate | |
JP4043831B2 (en) | Heat treatment equipment | |
JP2002313709A (en) | Substrate treating device and transport arm | |
US20170372926A1 (en) | Substrate treating unit, baking apparatus including the same, and substrate treating method using baking apparatus | |
JP3590328B2 (en) | Coating and developing method and coating and developing system | |
JP3527426B2 (en) | Development processing method and development processing apparatus | |
JP4199213B2 (en) | Substrate processing method | |
JP4069035B2 (en) | Substrate processing system and substrate heat treatment method | |
JP2004304104A (en) | Heat treatment device and control method of temperature in heat treatment device | |
JP2001205165A (en) | Treating device and treating method for substrate | |
JP4662479B2 (en) | Heat treatment equipment | |
JP3203796U (en) | Hydrophobic treatment equipment | |
JP4180304B2 (en) | Processing equipment | |
JP3559219B2 (en) | Coating and developing system and coating and developing method | |
JP5025546B2 (en) | Substrate processing method and substrate processing apparatus | |
JP2002343708A (en) | Substrate processing system and heat treating method | |
JP2008300876A (en) | Method for processing substrate | |
JP2003045790A (en) | Wafer heat treatment apparatus and rectifying mechanism and method therefor | |
JP3202954B2 (en) | Processing liquid supply device | |
JP4066255B2 (en) | Substrate processing apparatus and substrate processing method | |
JP3619149B2 (en) | Method and apparatus for removing dirt from processing apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040412 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20051011 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060725 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060921 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20071113 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20071114 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 4043831 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101122 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131122 Year of fee payment: 6 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |