JP2003318091A - Heat treatment device and heat treatment method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent the formation of unstable air flow along wafer edges to exert a detriment to the heat treatment of the wafer edges. <P>SOLUTION: A purging gas supply port 72 is provided at the middle of the top plate 70 of a cover 61. Exhaust ports 81 are provided on the side walls 61a of the cover 61, positioned external to a wafer W on a heating plate 63 and higher than the wafer W. Inside the cover 61, a first and second gas flow guide 73, 74 are provided; inside the side walls 61a, an exhaust duct 80 communicating with the exhaust ports 81 is formed; and, on the top plate 70, an impurity collecting section 87 communicating with the exhaust duct 80 is provided. During a heat treatment, the purging gas is introduced from the gas supply port 72 in the upper part of the treatment chamber S, passes through the first and second gas flow guide 73, 74, and then discharged from the exhaust ports 81 positioned higher than the wafer W at the side of the treatment chamber S. Thus the gas does not travel near the surface of the wafer W, adverse effect due to unstable currents is prevented. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate heat treatment apparatus and a heat treatment method.

[0002]

2. Description of the Related Art In a photolithography process in the manufacture of semiconductor devices, a heating process (prebaking) for evaporating a solvent in a resist solution applied to the surface of a wafer, a pattern exposure, and a coating film on the wafer are removed. Various heat treatments such as heat treatment for promoting a chemical reaction (post-exposure baking) and heat treatment after development (post-baking) are performed.

The above-mentioned heat treatment is carried out by a heat treatment apparatus. This heat treatment apparatus normally has a disk-shaped heat plate 200 on which a wafer W is placed and heated as shown in FIG. 17, and a heat plate 20.
Support ring 201 that supports the outer peripheral portion of 0, and the lid 2 that forms the processing chamber S integrally with the support ring 201
02 and so on. A supply port 20 for supplying a purging gas into the processing chamber S is provided at the center of the lid 202.
3 is provided. Further, a plurality of exhaust ports 204 for exhausting the atmosphere in the processing chamber S are provided on the upper surface of the support ring 201 located outside the heat plate 200.

During the heating process, the wafer W is placed on the heating plate 200 and heated in the processing chamber S formed by the lid 202 and the support ring 201. Further, during the heating process, gas is supplied into the processing chamber S from the supply port 203 of the lid 202, and the gas that has passed through the processing chamber S is exhausted from each exhaust port 204 of the support ring 201. Therefore, in the processing chamber S, there is formed an air flow that descends from the upper part of the processing chamber S, advances on the surface of the wafer W in the radial direction, passes near the outer edge of the wafer W, and flows into the lower part of the wafer W. It was

[0005]

In the conventional heat treatment apparatus as described above, the airflow flowing in the treatment chamber S causes the wafer W to flow.
Since the pressure is rapidly lost near the outer edge of the wafer W and near the exhaust port 204, the air flow is disturbed near the outer edge of the wafer W, and vortices and stagnation occur in places. For this reason, the airflow flowing over the outer edge of the wafer W is unstable, and, for example, the flow velocity, direction, pressure, etc. of the airflow are non-uniform within the surface of the outer edge of the wafer.
When the air flow at the outer edge of the wafer becomes non-uniform in this way, for example, in the case of pre-baking, the amount of solvent volatilized at the outer edge of the wafer becomes uneven, and the resist film on the outer edge of the wafer is uneven. Further, in the case of post-exposure baking, the rate of chemical reaction at the outer edge of the wafer becomes non-uniform, and, for example, the solubility of the resist film in the developing solution varies depending on the location.

When the non-uniform processing is performed on the outer edge portion of the wafer as described above, for example, the line width of the finally formed circuit pattern also varies, resulting in variation in quality. Such a variation in quality leads to a decrease in G / W yield (ratio of non-defective chips in the wafer surface), which is not preferable. Further, conventionally, it has been desired to reduce the cut width of the outer edge portion of the wafer (the width of the portion that cannot be used as a product and is cut), and uniform processing at the outer edge portion of the wafer requires narrowing of the cut width. Also leads to.

The present invention has been made in view of the above points, and prevents an unstable air flow from being formed in the vicinity of the outer edge portion of a substrate such as a wafer during heat treatment such as heat treatment, thereby preventing the outer edge portion of the substrate from being formed. It is an object of the present invention to provide a heat treatment apparatus and a heat treatment method that realize proper heat treatment in the above.

[0008]

According to the invention of claim 1, there is provided a heat treatment apparatus for heat treating a substrate in a processing chamber,
A heat treatment plate on which the substrate is placed and heat treated; and a lid which covers the heat treatment plate from above and forms a part of the processing chamber,
The lid has a substantially cylindrical shape having an upper surface portion and side portions and an opening on the lower surface side, the upper surface portion faces a substrate on the heat treatment plate, and the upper surface portion is provided in a processing chamber. A supply port for supplying a gas is provided, and an exhaust port for exhausting the gas in the processing chamber is provided at a side portion of the lid and higher than the substrate on the heat treatment plate. A heat treatment apparatus is provided.

According to this heat treatment apparatus, the gas introduced from above the lid is exhausted from the exhaust port at a position higher than the mounting position of the substrate, so that the air flow passes near the outer edge of the substrate as in the conventional case. It does not flow below the substrate. Therefore, an unstable and non-uniform air flow does not flow near the surface of the outer edge of the substrate, and the heat treatment is uniformly performed within the surface of the outer edge of the substrate.

The lid may be provided with an exhaust passage communicating with the exhaust port and passing through a side portion of the lid, and an impurity recovery unit for recovering impurities in the gas passing through the exhaust passage. . In such a case, the gas supplied into the processing chamber flows from the exhaust port into the side portion of the lid body, passes through the exhaust passage, and is then discharged after the impurities are collected by the impurity collecting unit. Therefore, the atmosphere in the processing chamber can be appropriately exhausted. Further, since the lid body is provided with the exhaust passage and the impurity recovery unit, it is not necessary to separately provide an exhaust pipe or the like, and the exhaust system of the device can be simplified. Furthermore, since the exhaust system can be removed together by removing the lid from the apparatus body, for example, maintenance becomes easy.

The side portion of the lid has an inner peripheral wall and an outer peripheral wall, and a gap is formed between the inner peripheral wall and the outer peripheral wall, and the gap serves as the exhaust passage. May be.
The inner peripheral wall and the outer peripheral wall may be removable from each other, and the exhaust passage may be exposed by removing at least the inner peripheral wall or the outer peripheral wall. In such a case, maintenance such as cleaning of the exhaust passage can be performed more easily. In particular, the exhaust passage is easily contaminated with volatile substances generated from the board, and frequent maintenance is required.
The effect is great.

The exhaust passage may be provided with an exhaust rectifying plate, and the exhaust rectifying plate may be provided with a vent hole through which gas passes. The gas flowing from the exhaust port can be appropriately guided to the impurity recovery unit by the exhaust rectifying plate. Further, for example, the exhaust pressure applied at one location on the downstream side of the exhaust passage can be lost by the exhaust rectifying plate, and the exhaust pressure at the upstream exhaust port can be adjusted. Therefore, the gas pressure in the processing chamber can be uniformly exhausted by adjusting the exhaust pressure from the exhaust port. A plurality of the exhaust flow straightening plates may be provided along the exhaust passage, and an opening ratio of the exhaust flow straightening plates due to the ventilation holes may be increased as approaching the upstream side. In this case, for example, the exhaust pressure applied to one location on the downstream side of the exhaust passage is gradually dispersed as it approaches the upstream side, and the gas can be exhausted from the exhaust port uniformly around the substrate.

A rectifying plate facing the substrate is provided inside the lid and between the upper surface portion and the substrate on the heat treatment plate, and the rectifying plate has a plurality of ventilation holes. The ventilation hole of the straightening vane may be formed obliquely so that the gas flowing in from the upper surface side may flow out toward the outer side of the substrate along the radial direction rather than the vertically downward direction. .

According to this heat treatment apparatus, the gas introduced from the supply of the upper surface and passing through the current plate flows toward the outer side of the substrate. Therefore, the gas flows in the side direction of the lid, the gas smoothly flows into the exhaust port, and it is possible to more reliably prevent the airflow from being formed in the vicinity of the outer edge of the substrate.

A rectifying plate facing the substrate is provided inside the lid and between the upper surface portion and the substrate on the heat treatment plate, and the rectifying plate has a plurality of ventilation holes. May be provided, and a guide member may be attached to the outlet of the ventilation hole of the straightening vane to flow the passing gas toward the outer side of the substrate along the radial direction rather than the vertically downward direction. Even in such a case, the gas that has passed through the rectifying plate flows in the lateral direction of the lid, so that the gas can be suitably exhausted, and the formation of an air flow near the outer edge of the substrate can be prevented.

According to a ninth aspect of the present invention, there is provided a heat treatment apparatus for heat-treating a substrate in a processing chamber, wherein a heat treatment plate on which a substrate is placed and heat treatment is performed, and the heat treatment plate is covered from above to cover a part of the treatment chamber. And a lid body to be formed, wherein the lid body has a substantially cylindrical shape having an upper surface portion and side portions and an opening on the lower surface side, the upper surface portion facing a substrate on the heat treatment plate, The upper surface is provided with a supply port for supplying gas into the processing chamber,
A rectifying plate facing the substrate is provided inside the lid and between the upper surface portion and the substrate on the heat treatment plate, and the rectifying plate is provided with a vent hole. The heat treatment apparatus is provided in which the vent hole is provided so that the opening ratio of the straightening vane increases from the central portion side of the straightening vane toward the outer edge portion side.

According to this heat treatment apparatus, the gas supplied from the supply port above the processing chamber is supplied onto the substrate through the straightening plate. At this time, since the opening ratio of the ventilation holes becomes higher toward the outer edge of the straightening vane, a large amount of gas is evenly supplied near the outer edge of the substrate facing the outer edge of the straightening vane. Therefore, the heat treatment of the entire surface of the substrate is properly performed. It should be noted that a plurality of vent holes having the same diameter may be provided in the straightening vane, and the vent holes may be provided in larger numbers from the central portion side of the straightening vane toward the outer edge portion side.

According to the eleventh aspect of the present invention, there is provided a heat treatment apparatus for heat-treating a substrate in a processing chamber, wherein a heat treatment plate on which a substrate is placed and heat treatment is performed, and the heat treatment plate is covered from above to cover a part of the treatment chamber. A lid body to be formed, and the lid body has a substantially cylindrical shape having an upper surface portion and side portions and an opening on a lower surface side,
The upper surface portion faces a substrate on the heat treatment plate, and the upper surface portion is provided with a supply port for supplying gas into the processing chamber. A rectifying plate facing the substrate is provided between the rectifying plate and the substrate, and the rectifying plate has a vent hole, and the vent hole allows the gas flowing in from the upper surface side from a vertically downward direction. Also provided is a heat treatment apparatus characterized in that it is also formed obliquely so as to flow out toward the outer edge of the substrate.

As described above, by supplying the gas flowing in from the upper surface of the lid toward the outer edge of the substrate by the straightening plate, a large amount of gas is evenly supplied to the outer edge of the substrate, and the entire surface of the substrate is covered. Is uniformly processed.

At least the surface of the rectifying plate facing the substrate may be subjected to a mirroring treatment, a treatment for reducing the surface energy, or a hydrophilic treatment. Impurities such as sublimates generated in the processing chamber are less likely to adhere to the surface of the straightening vane by performing the treatment on the straightening vane. Therefore, the impurities are appropriately exhausted from the exhaust port. Also,
Maintenance of the current plate becomes easy.

According to the fifteenth aspect of the present invention, there is provided a heat treatment apparatus for heat treating a substrate in a processing chamber, wherein a heat treatment plate on which a substrate is placed and heat treatment is performed, and the heat treatment plate is covered from above, and a part of the treatment chamber is covered. A lid body to be formed, and the lid body has a substantially cylindrical shape having an upper surface portion and side portions and an opening on a lower surface side,
The upper surface portion faces the substrate on the heat treatment plate, and a distance between the upper surface portion and the substrate is set so that natural convection does not occur in the processing chamber due to a temperature difference between the upper surface portion and the substrate on the heat treatment plate. A heat treatment apparatus is provided, which is adjusted and is subjected to a surface treatment on the inner side of the lid body to improve adhesion of impurities in an atmosphere in the treatment chamber.

According to this heat treatment apparatus, the heat treatment of the substrate can be performed without generating an air flow due to the introduction of gas in the processing chamber and further without generating natural convection. Therefore, even at the outer edge of the substrate, there is no adverse effect due to the nonuniform air flow, and appropriate processing is performed. Moreover, since impurities floating in the processing chamber can be attached to the inside of the lid,
It is possible to prevent impurities from adhering to the substrate.

According to the sixteenth aspect of the present invention, there is provided a heat treatment apparatus for heat-treating a substrate in a processing chamber, wherein a heat treatment plate on which a substrate is placed and heat treatment is performed, and the heat treatment plate is covered from above to cover a part of the treatment chamber. A lid body to be formed, and the lid body has a substantially cylindrical shape having an upper surface portion and side portions and an opening on a lower surface side,
The upper surface portion faces a substrate on the heat treatment plate, and the upper surface portion is provided with temperature adjusting means for adjusting the temperature of the upper surface portion to the same temperature as the temperature of the heat treatment plate. There is provided a heat treatment apparatus characterized in that a surface treatment is performed on the inner side of the substrate to improve the adhesion of the atmosphere in the treatment chamber to impurities.

According to this heat treatment apparatus, since the temperature of the upper surface of the lid and the temperature of the heat treated plate are kept the same, it is possible to prevent the occurrence of natural convection due to the temperature difference between the upper surface and the heat treated plate. That is, the substrate can be heat-treated without any air flow in the processing chamber. Therefore, the non-uniform air flow does not adversely affect the outer edge portion of the substrate, and appropriate heat treatment can be performed on the outer edge portion of the substrate. Further, since impurities floating in the processing chamber can be attached to the inside of the lid, it is possible to suppress the impurities from attaching to the substrate.

The surface treatment for improving the adhesion to the impurities may be a treatment for increasing the surface energy or a roughening treatment.

According to a nineteenth aspect of the present invention, there is provided a heat treatment method in which a substrate is placed on a heat treatment plate in a processing chamber to perform heat treatment, wherein a gas introduced from the upper portion of the processing chamber is used to remove the gas from the substrate on the heat treatment plate. There is provided a heat treatment method characterized by performing heat treatment while exhausting from a position outside and higher than a substrate.

According to this heat treatment method, the gas introduced from the upper part of the processing chamber is exhausted from a position higher than the substrate, so that no air flow is formed near the outer edge of the substrate, resulting in a non-uniform air flow as in the prior art. Does not adversely affect the outer edge of the substrate, and appropriate heat treatment is performed even on the outer edge of the substrate.

According to the twentieth aspect of the present invention, there is provided a heat treatment method of performing heat treatment by placing the substrate on a heat treatment plate maintained at a predetermined temperature in a treatment chamber formed by a lid covering the substrate from above. A heat treatment method, characterized in that the distance between the heat treatment plate and the upper surface of the lid facing the substrate is adjusted so that natural convection does not occur in the treatment chamber, and heat treatment is performed without forming an air flow in the treatment chamber. Will be provided.

According to the twenty-first aspect of the present invention, there is provided a heat treatment method in which a substrate is placed on a heat treatment plate maintained at a predetermined temperature in a treatment chamber formed by a lid covering the substrate from above to perform heat treatment. In order to prevent natural convection in the processing chamber, the temperature of the upper surface of the lid facing the substrate is adjusted to the same temperature as the heat treatment plate,
There is provided a heat treatment method characterized by performing heat treatment without forming an air flow in the processing chamber.

According to the method of performing heat treatment without forming an air flow in the processing chamber, the non-uniform air flow does not adversely affect the outer edge portion of the substrate as in the conventional case, so that appropriate heat treatment can be performed even on the outer edge portion of the substrate. Done.

[0031]

BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of the present invention will be described below. FIG. 1 is a plan view showing the outline of the configuration of a coating and developing treatment system 1 equipped with a heat treatment apparatus according to the first embodiment, and FIG. 2 is a front view of the coating and developing treatment system 1. 3 is a rear view of the coating and developing treatment system 1.

As shown in FIG. 1, the coating / development processing system 1 carries in / out 25 wafers W to / from the coating / development processing system 1 from the outside in a cassette unit, and carries in / out the wafer W from / to the cassette C. A cassette station 2, a processing station 3 in which various processing devices for performing predetermined processing in a single-wafer type in a coating and developing processing step are arranged in multiple stages, and a processing station 3 provided adjacent to the processing station 3. It has a structure in which the interface unit 4 for transferring the wafer W to and from the exposure apparatus which is not connected is integrally connected.

In the cassette station 2, a plurality of cassettes C can be placed in a line in the X direction (vertical direction in FIG. 1) at a predetermined position on the cassette placing table 5 serving as a placing portion. Then, this cassette arrangement direction (X direction) and the wafer arrangement direction of the wafers W accommodated in the cassette C (Z
Direction; vertical direction), a wafer transfer body 7 is provided so as to be movable along a transfer path 8 so that each cassette C can be selectively accessed.

The wafer carrier 7 has an alignment function for aligning the wafer W. The wafer carrier 7 is configured to be accessible to the extension device 32 belonging to the third processing device group G3 on the processing station 3 side as described later.

In the processing station 3, a main carrier unit 13 is provided at the center thereof, and various processing units are arranged in multiple stages around the main carrier unit 13 to form a processing unit group. In the coating and developing treatment system 1,
Four processing unit groups G1, G2, G3, G4 are arranged. The first and second processing unit groups G1, G2 are arranged on the front side of the coating and developing treatment system 1, and the third processing unit group. The G3 is arranged adjacent to the cassette station 2, and the fourth processing unit group G4 is arranged adjacent to the interface unit 4. Further, as an option, a fifth processing unit group G5 indicated by a broken line can be separately arranged on the back side. The main transfer device 13 includes the processing device groups G1, G2, G3, G4,
The wafer W can be loaded / unloaded into / from various processing apparatuses, which will be described later, arranged in G5. It should be noted that the number and arrangement of the processing device groups differ depending on the type of processing performed on the wafer W.
The number of processing device groups can be arbitrarily selected as long as it is one or more.

In the first processing unit group G1, for example, as shown in FIG. 2, a resist coating device 17 for coating a resist liquid on the wafer W to form a resist film on the wafer W, and a wafer W developed after exposure are developed. The developing processing device 18 for processing is arranged in two stages in order from the bottom. Similarly, in the case of the second processing device group G2, the resist coating device 19 and the developing processing device 2
0 and 2 are stacked in order from the bottom.

In the third processing unit group G3, for example, as shown in FIG. 3, a cooling unit 30 for cooling the wafer W,
An adhesion device 31 for enhancing the fixability of the resist liquid and the wafer W, an extension device 32 for transferring the wafer W, pre-baking devices 33, 34 as heat treatment devices according to the first embodiment, and a developing process. Post-baking devices 35 for performing the subsequent heat treatment are stacked, for example, in six stages from the bottom.

In the fourth processing unit group G4, for example, a cooling unit 40, an extension / cooling unit 41 for naturally cooling the mounted wafer W, an extension unit 42, a cooling unit 43, and a post-exposure baking for performing a heat treatment after exposure are performed. The devices 44 and 45 and the post-baking device 46 are stacked in order from the bottom, for example, in 7 stages.

In the center of the interface unit 4, the interface shown in FIG.
For example, a wafer carrier 50 is provided as shown in FIG. The wafer carrier 50 is configured to be freely movable in the X direction (vertical direction in FIG. 1), the Z direction (vertical direction) and the θ direction (rotational direction around the Z axis). , The extension / cooling device 41, the extension device 42, the peripheral exposure device 51, and an exposure device (not shown) belonging to the fourth processing device group G4 can be accessed to transfer the wafer W to each of them. There is.

The structure of the prebaking devices 33 and 34 will be described by taking the prebaking device 33 as an example. The pre-baking device 33 performs a heating process for evaporating the solvent remaining in the resist film after coating.

As shown in FIG. 4, the pre-baking device 33 includes a lid 61 which is movable up and down in a casing 60, and a processing chamber S which is located below the lid 61 and is integrated with the lid 61. A support ring 62 that forms

The support ring 62 has, for example, a substantially cylindrical shape whose upper and lower surfaces are open, and can accommodate a heat plate 63 as a heat treatment plate inside thereof. By housing the heating plate 63, the lower surface of the support ring 62 is closed. The heating plate 63 has a thick disk shape, and is used for mounting and heating the wafer W. For example, the heating plate 63 has a built-in heater 64 that generates heat by power supply, and can heat and maintain the heating plate 63 at a predetermined temperature. That is, the wafer W can be heated to a predetermined temperature by placing the wafer W on the heating plate 63 heated to a predetermined temperature.

For example, three through holes 65 are formed in the heating plate 63. Elevating pins 66 for supporting the back surface of the wafer W and moving up and down are inserted into the through holes 65, respectively. The elevating pin 66 moves up and down by an elevating mechanism 67 including, for example, a cylinder. The elevating pins 66 can be elevated above the hot plate 63 to transfer the wafer W to and from the main carrier 13, and to place the received wafer W on the hot plate 63.

An O-ring 68 is provided on the upper surface of the support ring 62, and the upper surface of the support ring 62 and the lid 61.
The gas in the processing chamber S does not flow out from the gap between the side portion 61a and the lower end portion.

The lid 61 has a top plate 7 whose upper surface is the upper surface.
It has a substantially cylindrical shape in which it is closed by 0 and the lower surface side is opened. The top plate 70 faces the wafer W on the heating plate 63. A gas supply portion 71 for purging gas, which communicates with a gas supply source (not shown), is provided at the center of the top plate 70. A supply port 72 communicating with the gas supply unit 71 is provided at the center of the top plate 70. Therefore, it is possible to supply a gas such as air, a nitrogen gas, or an inert gas from a gas supply source (not shown) to the supply port 72 via the gas supply unit 71 and introduce the gas into the processing chamber S from the supply port 72.

Inside the lid 61, the top plate 70 and the heating plate 6
Between the three, for example, two circular straightening plates 73, 74
Are lined up and down. The first and second straightening vanes 7
3, 74 are fixedly installed so as to be horizontal to the top plate 70 and the heat plate 63. As shown in FIG. 5, a plurality of ventilation holes 75 are evenly distributed and opened in the first straightening vane 73. The vent hole 75 is, for example, as shown in FIG.
The gas is opened obliquely toward the outside of the straightening plate 73, and the gas that has flowed into the ventilation hole 75 from above flows out in the depression direction that is inclined outward from the vertically downward direction.

As shown in FIGS. 7 and 8, the second straightening vane 74 is provided with a vent hole 75 that is inclined outward from the vertically downward direction as is the case with the first straightening vane 73. Second rectifying plate 74
Has a higher aperture ratio than the first rectifying plate 73, and more vent holes 75 are opened. Therefore, the supply port 72
The gas introduced from (1) is largely pressure-damped by the first straightening vane 73, is dispersed by the second straightening vane 74, and flows out above the hot plate 63. Further, the gas is on the outer side of the wafer W,
That is, it flows toward the side portion 61a of the lid 61. In addition,
The inclination of the vent hole 75 of the first straightening vane 73 is adjusted to the second straightening vane 7
It may be larger than the inclination of the ventilation hole 75 of No. 4. Also,
The surfaces of the first rectifying plate 73 and the second rectifying plate 74 are flattened or mirror-finished in order to prevent impurities from adhering, and have a surface roughness (Ra) of 2.0 × 10 ⁻ , for example. It is processed to about ³ .

The side portion 61a of the lid 61 is formed thick as shown in FIG. 4, and has a double structure composed of a substantially cylindrical inner peripheral wall 61b and an outer substantially cylindrical outer peripheral wall 61c. Have There is a gap between the inner peripheral wall 61b and the outer peripheral wall 61c, and the gap serves as a gas exhaust passage 80. Therefore, the exhaust passage 80 passes through the inside of the side portion 61a in the vertical direction and in a ring shape as shown in FIG.
As shown in FIG. 4, an exhaust port 81 for exhausting the atmosphere such as gas in the processing chamber S is provided in the lower portion inside the side portion 61a, that is, in the lower portion of the inner peripheral wall 61b. The exhaust port 81 is provided, for example, in a ring shape along the inner peripheral wall 61b.
When the processing chamber S is formed by the lid 61 and the support ring 62, the position of the exhaust port 81 is at the wafer W on the hot plate 63.
The exhaust port 81 is opened to a higher position.

In the exhaust passage 80, a plurality of, for example, three rectifying plates 82, 83, 84 as exhaust rectifying plates are arranged vertically in parallel. These straightening plates 82 to 84 are formed in a ring shape along the shape of the exhaust passage 80 so as to cover the exhaust passage 80. The straightening vanes 82 to 84 are provided in series along the exhaust passage 80, and the third straightening vane 82, the fourth straightening vane 83, and the fifth straightening vane 84 are arranged in this order from the bottom. As shown in FIG. 10, a plurality of ventilation holes 85 are formed in each of the straightening plates 82 to 84, and the exhaust port 8
The gas sucked from No. 1 passes through the ventilation holes 85 of the flow straightening plates 82 to 84 and rises in the exhaust passage 80. Each straightening plate 8
The number of ventilation holes 85 of 2 to 84 is different, for example, the third
The straightening vanes 82 are provided at eight positions, the fourth straightening plate 83 is provided at four places, and the fifth straightening plate 84 is provided at two places. In this way, the number of vent holes 85 increases as the upstream side, that is, the suction side of the exhaust passage 80 approaches the discharge side. This is because the exhaust pressure applied to a later-described passage hole 86 on the downstream discharge side is lost. That is, the exhaust pressure concentrated at one place in the downstream passage hole 86 is dispersed as it goes upstream, and the atmosphere in the processing chamber S is evenly exhausted from the ring-shaped exhaust port 81. In addition,
The ventilation holes 85 of the straightening vanes 82 to 84 are arranged at equal intervals, and the gas flows in the exhaust passage 80 without deviation.

The top plate 70 has a side portion 61a as shown in FIG.
It also serves as an upper lid, and the top plate 70 has an exhaust passage 8
A passage hole 86 is provided for passing zero gas. The passage hole 86 is provided at one place. An impurity recovery unit 87 is provided on the passage hole 86 for recovering impurities in the gas, for example, sublimates. Impurity recovery unit 87
Has an impurity recovery passage 88 therein, and the impurity recovery passage 88 communicates with the passage hole 86. A filter 89 is attached to the impurity recovery passage 88, and the impurities in the gas passing through the impurity recovery passage 88 are recovered by the filter 89. The impurity recovery unit 87 is connected to a negative pressure generating means (not shown) such as a pump in a factory provided outside the prebaking apparatus 33, and a negative pressure is applied to the impurity recovery unit 87 side. The atmosphere in the processing chamber S can be sucked from the exhaust port 81. Note that the impurity recovery unit 87 may be connected to, for example, a supply gas tank so that the exhausted gas can be reused as the supply gas into the processing chamber S.

With the above structure, the gas introduced from the upper part of the processing chamber S is supplied to the first rectifying plate 73 and the second rectifying plate 74.
Through the exhaust passage 81 of the side portion 61a of the lid 61 and the impurities are removed by the impurity recovery unit 87. It is exhausted to the outside of the prebaking device 33.

As shown in FIG. 10, the outer peripheral wall 61c of the lid 61 is removable from the inner peripheral wall 61b. For example, the top plate 70 and the outer peripheral wall 61c are fixed to each other, and the outer peripheral wall 61c and the inner peripheral wall 61b can be separated by lifting the outer peripheral wall 61c integrated with the top plate 70. As a result, the inside of the exhaust passage 80 is exposed, and the inside of the exhaust passage 80 contaminated by a sublimate or a solvent can be easily cleaned.

The entire lid 61 can be moved up and down by an elevator mechanism (not shown) equipped with a cylinder or the like, and the lid 61 is moved up and down when the wafer W is loaded and unloaded. Further, the wafer W is attached to the side surface of the casing 60 by the main transfer device 13.
A loading / unloading port 90 for loading and unloading is provided.

The prebaking device 33 according to the first embodiment is constructed as described above, and its operation and the like will be described below. First, before the wafer W is transferred to the pre-baking apparatus 33, the purge gas is supplied from the gas supply unit 71. The heating plate 63 is maintained at a predetermined heating temperature, for example, 90 ° C. to 200 ° C. by the heater 64.

Then, the wafer W held by the main transfer device 13 after the exposure processing is completed in the exposure device is transferred from the loading / unloading port 90 into the casing 60, and rises in advance above the hot plate 63 and stands by. It is delivered to the lifting pin 66. Then, the lid 61 descends, and the processing chamber S is formed integrally with the support ring 62. At this time, supply port 7
As shown in FIG. 4, the gas supplied from 2 passes through the first rectifying plate 73 and the second rectifying plate 74, and the direction of the air flow is directed to the side portion 61a side of the lid 61. Second rectifying plate 74
The gas that has passed through is exhausted from the exhaust port 81 without reaching the surface of the wafer W. The gas exhausted from the exhaust port 81 passes through the flow control plates 82 to 84 of the exhaust passage 80, flows into the impurity recovery passage 88, passes through the filter 89 to recover the impurities, and then is exhausted.

When an air stream is formed which descends from above the processing chamber S and is located outside the wafer W and at a position higher than the wafer W, the elevating pins 66 subsequently descend and the wafer W heats the plate 6.
3 is placed on top. In this way, heating of the wafer W is started, and heating is performed for a predetermined time. The solvent generated by this heating is taken into the gas stream and is exhausted from the exhaust port 81. In the impurity recovery unit 87, the impurities generated from the wafer W and the like together with the solvent are recovered by the filter 88, and the gas from which the impurities have been removed is sent to, for example, factory exhaust.

When the heating for a predetermined time is completed, the lift pins 66 are lifted again and the wafer W is lifted onto the hot plate 63. Then, for example, the lid 61 rises and the processing chamber S is opened. When the processing chamber S is opened, gas supply is stopped, for example.

The wafer W on the elevating pins 66 is transferred to the main carrier 13 which has entered from the carry-in / out port 90 again, and carried out from the pre-baking device 33.

According to the first embodiment, the lid 61
Since the exhaust port 81 is provided at a position higher than the wafer W on the side portion 61a of the cover 61, the gas introduced from the top plate 70 of the cover 61 flows toward the side 61a of the cover 61. As a result, the gas is not directly blown onto the surface of the wafer W, and the volatilization of the solvent in the resist film on the surface of the wafer W is not influenced by the movement of the air flow. Therefore, the outer edge of the wafer W is not adversely affected by the unstable air flow, and the resist film having a uniform film thickness is formed also on the outer edge of the wafer W.

Since the lid 61 is provided with the exhaust port 81, the exhaust passage 80, and the impurity collecting section 87, the lid body 6 is removed from the main body of the apparatus.
By removing 1, the mechanism of the exhaust system can also be removed. Therefore, when the lid 61 is removed from the main body of the prebaking apparatus 33, maintenance such as cleaning of the exhaust system can be performed. In particular, in the pre-baking device 33, the solvent is easily evaporated and the exhaust system is easily contaminated, so that the effect is great.

Further, the side portion 61a of the lid body 61 is attached to the inner peripheral wall 61.
b and the outer peripheral wall 61c have a double structure, and the outer peripheral wall 61c and the inner peripheral wall 61b can be separated from each other.
Can be exposed. As a result, the maintenance of the exhaust passage 80, which is easily polluted, can be performed more easily.

In the exhaust passage 80, there are three straightening plates 82-84.
Since the number of the vent holes 85 is increased so as to go upstream, the exhaust pressure from the downstream side is gradually reduced, and the atmosphere in the processing chamber S is evenly distributed from the ring-shaped exhaust port 81. Can be exhausted. Therefore, the solvent on the wafer W is evacuated uniformly, and the evaporation rate of the resist film on the wafer W is also kept uniform within the wafer surface.

Vent holes 7 of the current plate 73, 74 in the lid 61
Since 5 is formed obliquely, the gas supplied from the supply port 72 turns to the outer side of the wafer W when passing through the straightening plates 73 and 74, and flows to the exhaust port 81 side. Therefore, the air flow is more reliably prevented from being formed in the vicinity of the surface of the wafer W, and the heat treatment of the outer peripheral portion of the wafer is properly performed.

Since the rectifying plates 73 and 74 are flattened or mirror-finished, impurities generated from the wafer W or the like are unlikely to adhere to the rectifying plates 73 and 74, and the impurities can be discharged through the exhaust port 81. Also,
Since it is difficult for impurities to adhere, the frequency of maintenance can be reduced and the operating rate of the device can be increased accordingly. In addition,
As a process for making it difficult for impurities to adhere, for example, a straightening plate 7
The surface of 3,74 may be fluorinated to reduce the surface energy. At this time, the current plate 7
The surface energy of 3,74 is 2.0 × 10 ⁻⁴ N / cm.
It is preferably not more than the degree. In addition, the straightening plates 73, 7
The surface of 4 may be subjected to a surface hydrophilization treatment in which plasma ions are implanted.

The current plate 73, 7 described in the above embodiment
The ventilation hole 75 of No. 4 was provided obliquely so that the air flow was directed outward, but as shown in FIG. 11, the ventilation hole 101 of the straightening plate 100 was opened in the vertical direction and the outlet 101 of the ventilation hole 101 was opened.
A guide member 102 that causes the air flow to flow toward the outer side of the wafer W may be attached to a. Guide member 10
2 is provided, for example, for each vent hole 101, and the surface on which the air flow hits is inclined from the vertically downward direction to the outer side of the wafer W. Even in such a case, the gas supplied from the upper portion of the processing chamber S flows toward the side portion 61a of the lid 61, and the airflow does not pass near the surface of the wafer W. Thus, a resist film having a uniform thickness is formed even on the outer edge of the wafer W.

In the first embodiment described above, the heat treatment of the outer edge of the wafer W is performed uniformly so that the airflow is not directly applied to the wafer W. However, a uniform and large amount of airflow is positively applied to the outer edge of the wafer W. May be uniformly supplied to perform uniform heat treatment on the outer edge of the wafer W. Hereinafter, such an embodiment will be described as a second embodiment. FIG. 12 shows the second
FIG. 3 is an explanatory view of a vertical section showing the configuration of the pre-baking apparatus 120 according to the embodiment of the present invention.

The pre-baking device 120 has a casing 121 in which a substantially cylindrical lid 122 having an open bottom surface is formed.
And a substantially cylindrical support ring 123 that forms the processing chamber S integrally with the lid 122. The support ring 123 is capable of accommodating the hot plate 124 as in the first embodiment. For example, on the upper surface of the support ring 123, an exhaust port 125 for exhausting the atmosphere in the processing chamber S
Is provided. The top plate 12 that is the upper surface of the lid 122
6, a gas supply port 127 is provided. The gas supplied from the supply port 127 can be exhausted from the exhaust port 125 of the support ring 123.

Two circular rectifying plates 128 and 129 are provided inside the lid 122 and at positions facing the heat plate 124.
Is provided. The two straightening vanes 128 and 129 are vertically arranged side by side. For example, the first straightening vane 128 is arranged on the lower side and the second straightening vane 129 is arranged on the upper side. First
A plurality of vent holes 130 are provided in the current plate 128 of FIG. The ventilation holes 130 are formed so that the number of the ventilation holes 130 increases from the central portion of the first straightening vane 128 toward the outer edge portion. Second straightening plate 1
29 also has a plurality of ventilation holes 1 similar to the first straightening vane 128.
The vent holes 130 are formed so that the number of the vent holes 130 is increased from the central part toward the outer edge part side and the opening ratio is increased. The pre-baking device 120 includes an elevating pin 131, an elevating mechanism 132, and an O-ring 13 having the same configuration as that of the first embodiment.
3, gas supply unit 134, heater 135, carry-in / out port 136
Etc. are provided.

At the time of heat treatment, gas is introduced into the processing chamber S from the supply port 127 of the top plate 126. The gas passes through the second straightening plate 129 and the first straightening plate 128 in order and is supplied onto the wafer W. At this time, since the opening ratios of the first rectifying plate 128 and the second rectifying plate 129 on the outer edge side are high, the gas is sufficiently and uniformly supplied to the outer edge of the wafer W. The gas that has passed near the surface of the wafer W is
The gas is exhausted from the exhaust port 125 outside the wafer W. Note that a series of heat treatment processes for the wafer W is the same as that in the first embodiment described above, and will be omitted.

According to the second embodiment, since the opening ratios of the first and second straightening vanes 128 and 129 on the outer edge side are high, a large amount of gas is uniformly supplied to the outer edge of the wafer W. . As a result, the solvent evenly evaporates even at the outer edge of the wafer W, and a resist film having no unevenness can be formed on the outer edge of the wafer W. The opening ratio of the outer edge of the straightening vane may be increased by gradually increasing the diameter of the vent hole toward the outer edge of the straightening vane.

In the second embodiment, a large amount of gas is evenly supplied to the outer edge of the wafer W by changing the direction of the ventilation hole without changing the opening ratio of the ventilation hole of the straightening plate. You may In such a case, as shown in FIG. 14, the ventilation hole 141 of the current plate 140 is formed obliquely from the vertically downward direction toward the outer edge of the wafer W. By doing so, a large amount of gas that has passed through the ventilation holes 140 is supplied to the outer edge portion of the wafer W. As a result, the solvent on the outer edge of the wafer W is volatilized uniformly, and a uniform resist film having a predetermined film thickness is formed also on the outer edge of the wafer W.

Next, a third gas is not supplied into the processing chamber S.
The embodiment will be described. As shown in FIG. 15, the prebaking apparatus 150 according to the third embodiment is
Inside the casing 151, a lid 152 and a support ring 153 are provided. The lid body 152 has a substantially cylindrical shape with an open lower surface. The support ring 153 has, for example, a substantially cylindrical shape whose upper and lower surfaces are open, and the lower surface is closed by accommodating the heat plate 154 inside thereof. Lid 152
Lower end portion 152a and support ring 153 upper end portion 153
a corresponds to that, the lid 152 is lowered, and the lid 15
2 lower end 152a and support ring 153 upper end 1
The processing chamber S can be formed by matching 53a. An O-ring 155, for example, is provided between the lower end portion 152a of the lid body 152 and the upper end portion 153a of the support ring, so that the processing chamber S can be sealed.

As in the first embodiment, the heater 156 is built in the heating plate 154, and the heating plate 154 can be heated and maintained at a predetermined temperature. The distance D between the top plate 157, which is the upper surface of the lid 152, and the heating plate 154 is adjusted to a distance at which natural convection does not occur in the processing chamber S when the heating plate 154 is maintained at a predetermined temperature, for example, 8 mm or less. ing. Also, the lid 1
The inner surface of 52 has a surface roughness (Ra) of 6.3 μ, for example.
A roughening treatment of about m is performed, and impurities are easily attached. The hot plate 154 is provided with lift pins 158 and lift mechanisms 159 having the same configurations as in the first embodiment, and the wafer W on the hot plate 154 can be lifted and lowered. A loading / unloading port 160 for the wafer W is provided on the side surface of the casing 151.

The operation of the pre-baking device 150 having the above-described structure will be described. First, the wafer W carried into the casing 151 by the main carrier device 13.
However, it is transferred to the elevating pin 158 which has been raised and waited in advance. Next, the lid body 152 descends to form the processing chamber S. Then, the lifting pins 158 descend and the wafer W moves to the hot plate 15.
It is placed on No. 4 and heated for a predetermined time. At this time the wafer W
Impurities generated from the like are adsorbed on the surface of the lid body 152. Then, after a lapse of a predetermined time, the wafer W is raised, and then the lid body 152 is raised. When the processing chamber S is opened in this way, the wafer W is transferred to the main carrier 13 and carried out of the casing 151, and a series of heat treatments is completed.

According to the third embodiment, unlike the first and second embodiments, the air flow is not formed during the heating of the wafer W, so that the adverse effect of the air flow on the outer edge portion of the wafer is ensured. It can be prevented. Also, the top plate 157 of the lid body 152
Since the natural convection caused by the temperature difference between the heating plate 154 and the top plate 157 is prevented by adjusting the height of the heating plate 154, the atmosphere in the processing chamber S can be completely brought to a steady state. Furthermore, the lid 15
Since the inner surface of 2 is roughened, it is possible to adsorb impurities generated from the wafer W during the processing and prevent the impurities from adhering to the wafer W again. In addition, the pre-baking device 15
0, the same gas supply means as in the first embodiment,
Exhaust means may be provided to ventilate the atmosphere in the processing chamber S after the heating of the wafer W is completed.

In the third embodiment, the lid 15
By applying a roughening treatment to the inner surface of 2, the lid 15
I made it easy to attach impurities to 2, but by other methods
Impurities may be easily attached. For example, inside the lid 152
The side surface may be treated to increase the surface energy.
Yes. Further, the material of the lid body 152 itself is made of surface energy such as iron.
You may use the thing with high Gi. In addition, the surface d
Nergi is 2.0 × 10 ^-2N / cm or more
desirable. The surface of the lid 152 is coated with a photocatalyst and washed.
You may make it easy to remove dirt at the time of cleaning.

In the third embodiment, the height of the top plate 156 is adjusted to prevent the occurrence of natural convection in the processing chamber S. However, the temperature of the lid 152 is adjusted to generate natural convection. May be prevented. For example, as shown in FIG. 16, the top plate 171 of the lid 170 has a built-in heater 172 that generates heat by power supply. The power source 173 of the heater 172 is, for example, the control unit 17
The temperature of the top plate 171 can be controlled by adjusting the heat generation amount of the heater 172 by changing the supply voltage of the power source 173. In addition, in this embodiment, the heater 172, the power source 173, and the control unit 174 correspond to the temperature adjusting means.

During heating of the wafer W, the top plate 171 is
Is adjusted and maintained at the same temperature as the hot plate 154. By doing so, the temperature difference between the heating plate 154 and the top plate 171 is eliminated, and natural convection in the processing chamber S is prevented.

Although an example of the embodiment of the present invention has been described, the present invention is not limited to this example but can take various forms. For example, the present invention can be applied to a heat treatment apparatus other than the pre-baking apparatus, such as a post-exposure baking apparatus, a post-baking apparatus, and a cooling apparatus. Further, the substrate is not limited to the above-mentioned wafer W, and can be applied to a heat treatment apparatus for heat-treating another square substrate such as an LCD substrate.

[0080]

According to the present invention, the unstable air flow can be prevented from adversely affecting the outer edge portion of the substrate, so that the heat treatment of the outer edge portion of the substrate is appropriately performed, and the G / W yield is improved. .

[Brief description of drawings]

FIG. 1 is a plan view of a coating and developing treatment system including a pre-baking device according to a first embodiment.

FIG. 2 is a front view of the coating and developing treatment system of FIG.

FIG. 3 is a rear view of the coating and developing treatment system of FIG.

FIG. 4 is an explanatory view of a vertical section showing the configuration of the prebaking apparatus.

FIG. 5 is a plan view of a first straightening vane.

FIG. 6 is a vertical cross-sectional view of a first straightening vane.

FIG. 7 is a plan view of a second rectifying plate.

FIG. 8 is a vertical cross-sectional view of a second rectifying plate.

FIG. 9 is a cross-sectional view of the lid body.

FIG. 10 is a perspective view showing a configuration of a lid body.

FIG. 11 is a vertical cross-sectional view showing another configuration example of the current plate.

FIG. 12 is an explanatory view of a vertical cross section showing the configuration of the prebaking apparatus according to the second embodiment.

FIG. 13 is a plan view of a first rectifying plate.

FIG. 14 is a vertical cross-sectional view showing another configuration example of the current plate.

FIG. 15 is an explanatory view of a vertical cross section showing the configuration of the prebaking apparatus according to the third embodiment.

16 is an explanatory view of a vertical cross section showing another configuration example of the prebaking apparatus of FIG.

FIG. 17 is an explanatory view of a vertical cross section showing the outline of the configuration of a conventional heat treatment apparatus.

[Explanation of symbols]

1 Coating and developing system 33 Pre-baking equipment 61 Lid 61a side part 62 Support ring 63 hot plate 70 Top plate 73 First straightening plate 74 Second rectifying plate 80 exhaust passage 81 Exhaust port 87 Impurity Recovery Department S processing room W wafer

Claims (21)

[Claims] 1. A heat treatment apparatus for heat-treating a substrate in a processing chamber, comprising: a heat treatment plate on which a substrate is placed and heat treatment; and a lid which covers the heat treatment plate from above and forms a part of the treatment chamber. The lid has a substantially cylindrical shape having an upper surface portion and side portions and an opening on a lower surface side, the upper surface portion faces a substrate on the heat treatment plate, and the upper surface portion has a processing portion. A supply port for supplying a gas is provided in the chamber, and an exhaust port for exhausting the gas in the processing chamber is provided at a side portion of the lid and higher than the substrate on the heat treatment plate. Heat treatment equipment characterized by being 2. The lid body includes an exhaust passage communicating with the exhaust port and passing through a side portion of the lid body, and an impurity collecting portion for collecting impurities in a gas passing through the exhaust passage. The heat treatment apparatus according to claim 1, wherein the heat treatment apparatus is a heat treatment apparatus. 3. A side portion of the lid has an inner peripheral wall and an outer peripheral wall, and a gap is formed between the inner peripheral wall and the outer peripheral wall, and the gap is formed in the exhaust passage. The heat treatment apparatus according to claim 2, wherein 4. The inner peripheral wall and the outer peripheral wall are detachable from each other, and the exhaust passage can be exposed by removing at least the inner peripheral wall or the outer peripheral wall. Heat treatment equipment. 5. The exhaust rectifying plate is provided in the exhaust passage, and the exhaust rectifying plate is provided with a vent hole through which gas passes. Three
Or the heat treatment apparatus according to any one of 4 above. 6. A plurality of the exhaust rectifying plates are provided along the exhaust passage, and an opening ratio of the exhaust rectifying plates due to the ventilation holes is increased toward the upstream side. The heat treatment apparatus according to claim 5. 7. A rectifying plate facing the substrate is provided inside the lid and between the upper surface portion and the substrate on the heat treatment plate, and the rectifying plate has a plurality of rectifying plates. The straightening plate has a vent hole, and the vent hole is formed obliquely so that the gas flowing in from the upper surface side flows out toward the outer side of the substrate along the radial direction rather than the vertically downward direction. The heat treatment apparatus according to any one of claims 1, 2, 3, 4, 5 and 6, characterized in that 8. A rectifying plate facing the substrate is provided inside the lid and between the upper surface portion and the substrate on the heat treatment plate, and the rectifying plate has a plurality of rectifying plates. Ventilation holes are provided at the outlet of the ventilation holes of the rectifying plate.
7. A guide member for flowing the passing gas toward the outer side of the substrate along the radial direction rather than the vertically downward direction is attached, and the guide member according to claim 1, 2, 3, 4, 5 or 6. The heat treatment apparatus according to any one of claims. 9. A heat treatment apparatus for heat-treating a substrate in a processing chamber, comprising: a heat treatment plate on which a substrate is placed and heat treatment; and a lid which covers the heat treatment plate from above and forms a part of the treatment chamber. The lid has a substantially cylindrical shape having an upper surface portion and a side surface portion and an opening on a lower surface side, the upper surface portion faces a substrate on the heat treatment plate, and the upper surface portion has a processing portion. A supply port for supplying gas is provided in the chamber, and inside the lid, between the upper surface portion and the substrate on the heat treatment plate,
A rectifying plate facing the substrate is provided, and the rectifying plate is provided with a vent hole, and the vent hole is formed in the opening of the rectifying plate from the central portion side of the rectifying plate toward the outer edge portion side. A heat treatment apparatus, characterized by being provided so as to have a high rate. 10. The straightening vane is provided with a plurality of vent holes having the same diameter, and the vent holes are provided so as to be closer to the outer edge portion side from the central portion side of the straightening vane. The heat treatment apparatus according to claim 9, wherein 11. A heat treatment apparatus for heat treating a substrate in a processing chamber, comprising: a heat treatment plate on which a substrate is placed and heat treatment; and a lid which covers the heat treatment plate from above and forms a part of the treatment chamber. The lid has a substantially cylindrical shape having an upper surface portion and side portions and an opening on a lower surface side, the upper surface portion faces a substrate on the heat treatment plate, and the upper surface portion has a processing portion. A supply port for supplying gas is provided in the chamber, and a rectifying plate facing the substrate is provided inside the lid and between the upper surface portion and the substrate on the heat treatment plate. The straightening vane has a vent hole, and the vent hole is formed obliquely so that the gas flowing from the upper surface side flows out toward the outer edge part side of the substrate rather than the vertically downward direction. And heat treatment equipment. 12. A mirror surface treatment is applied to at least a surface of the rectifying plate facing the substrate,
The heat treatment apparatus according to claim 7, 8, 9, 10 or 11. 13. The surface of at least the surface of the current plate facing the substrate is subjected to a treatment for reducing surface energy, 7, 8, 9, 10 or 11.
The heat treatment apparatus according to any one of 1. 14. A hydrophilic treatment is applied to at least a surface of the current plate facing the substrate.
The heat treatment apparatus according to claim 7, 8, 9, 10 or 11. 15. A heat treatment apparatus for heat treating a substrate in a processing chamber, comprising: a heat treatment plate on which a substrate is placed and heat treatment; and a lid which covers the heat treatment plate from above and forms a part of the treatment chamber. The lid has a substantially cylindrical shape having an upper surface portion and side portions and an opening on the lower surface side, the upper surface portion facing the substrate on the heat treatment plate, and the upper surface portion and the heat treatment plate on the heat treatment plate. The distance between the upper surface and the substrate is adjusted so that natural convection does not occur in the processing chamber due to the temperature difference between the substrate and the substrate. A heat treatment apparatus characterized by being subjected to a surface treatment for improving the heat treatment. 16. A heat treatment apparatus for heat treating a substrate in a processing chamber, comprising: a heat treatment plate on which a substrate is placed and heat treatment; and a lid which covers the heat treatment plate from above and forms a part of the treatment chamber. The lid has a substantially cylindrical shape having an upper surface portion and side portions and an opening on the lower surface side, the upper surface portion faces a substrate on the heat treatment plate, and the upper surface portion is Temperature adjusting means for adjusting the temperature of the upper surface to the same temperature as the temperature of the heat treatment plate is provided, and the inside of the lid is subjected to a surface treatment for improving the adhesion of the atmosphere in the processing chamber to impurities. The heat treatment device characterized by the above. 17. The heat treatment apparatus according to claim 15, wherein the surface treatment for improving the adhesiveness to the impurities is a treatment for increasing the surface energy. 18. The heat treatment apparatus according to claim 15, wherein the surface treatment for improving the adhesion to impurities is a roughening treatment. 19. A heat treatment method of placing a substrate on a heat treatment plate in a processing chamber to perform heat treatment, wherein the gas introduced from the upper portion of the treatment chamber is outside the substrate on the heat treatment plate and is from the substrate. A heat treatment method characterized by performing heat treatment while exhausting from a high position. 20. A heat treatment method for performing heat treatment by placing a substrate on a heat treatment plate maintained at a predetermined temperature in a treatment chamber formed by a lid covering a substrate from above,
A heat treatment method, characterized in that the heat treatment is performed without forming an air flow in the processing chamber by adjusting the distance between the heat treatment plate and the upper surface of the lid facing the substrate so that natural convection does not occur in the processing chamber. . 21. A heat treatment method of performing heat treatment by placing a substrate on a heat treatment plate maintained at a predetermined temperature in a treatment chamber formed by a lid that covers the substrate from above,
In order to prevent natural convection in the processing chamber, the temperature of the upper surface of the lid facing the substrate is adjusted to the same temperature as that of the heat treatment plate, and heat treatment is performed without forming an air flow in the processing chamber. A heat treatment method characterized by: