JP2008028177A - Apparatus for heating substrate - Google Patents

Apparatus for heating substrate Download PDF

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JP2008028177A
JP2008028177A JP2006199518A JP2006199518A JP2008028177A JP 2008028177 A JP2008028177 A JP 2008028177A JP 2006199518 A JP2006199518 A JP 2006199518A JP 2006199518 A JP2006199518 A JP 2006199518A JP 2008028177 A JP2008028177 A JP 2008028177A
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Prior art keywords
substrate
heating
heater
lower cover
heating apparatus
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JP2006199518A
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Japanese (ja)
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Sadako Yamada
禎子 山田
Masaru Tanaka
賢 田中
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Nihon Dennetsu Co Ltd
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Nihon Dennetsu Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an apparatus for heating substrates for uniformizing the temperature distribution of a substrate that is subjected to heat processing. <P>SOLUTION: A heating means 12 is provided to a wall 2b of at least a lower cover 2, in the lower cover 2, and an upper cover 3 constituting an apparatus for processing substrates 1. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、基板を加熱処理する基板加熱装置に関し、詳しくは半導体素子や液晶パネルの製造工程における半導体ウェハや液晶用ガラスのフォトリソグラフィにおいて用いられる基板加熱装置に関する。   The present invention relates to a substrate heating apparatus that heats a substrate, and more particularly to a substrate heating apparatus used in photolithography of a semiconductor wafer or liquid crystal glass in a manufacturing process of a semiconductor element or a liquid crystal panel.

半導体素子や液晶パネルの製造工程の1つであるフォトリソグラフィにおいては、図4に示すような基板加熱装置1を用いて、半導体ウェハや液晶用ガラスなどの基板6について、フォトレジストの加熱処理(PAB:Post-Applied Bake、PEB:Post-Exposure Bake)が行われる。   In photolithography, which is one of the manufacturing processes of a semiconductor element or a liquid crystal panel, a photoresist heating process (for a semiconductor wafer or a glass for liquid crystal) is performed on a substrate 6 using a substrate heating apparatus 1 as shown in FIG. PAB: Post-Applied Bake and PEB: Post-Exposure Bake) are performed.

このとき基板表面に正確なパターンを形成するためには基板6の温度分布を均一にする必要があるが、基板6は加熱プレート9を介してヒーター8により下方から加熱されるため、中心部と端縁部の側方への放熱量の差により、基板6に温度ムラが生じてしまうという問題があった。   At this time, in order to form an accurate pattern on the substrate surface, it is necessary to make the temperature distribution of the substrate 6 uniform. However, since the substrate 6 is heated from below by the heater 8 through the heating plate 9, There is a problem that temperature unevenness occurs in the substrate 6 due to a difference in the amount of heat radiation to the side of the edge portion.

このような問題を解決するため、特許文献1には、ヒーターを複数の領域に分割して、それぞれの領域の温度を温度センサーに基づき制御する発明が開示されている。   In order to solve such a problem, Patent Document 1 discloses an invention in which a heater is divided into a plurality of regions and the temperature of each region is controlled based on a temperature sensor.

しかし、上記の特許文献1に記載の発明では、ヒーターの各領域間において熱干渉が生じてしまうため、基板の温度分布をより均一化することが困難であるという問題があった。
特開2004−134723号公報
However, the invention described in Patent Document 1 has a problem that it is difficult to make the temperature distribution of the substrate more uniform because thermal interference occurs between the heater regions.
JP 2004-134723 A

本発明は、このような問題点に鑑みてなされたものであり、基板の温度分布をより均一化することができる基板加熱装置を提供することを目的とするものである。   The present invention has been made in view of such problems, and an object of the present invention is to provide a substrate heating apparatus that can make the temperature distribution of the substrate more uniform.

上記の目的を達成するため、本発明は、上部カバーと下部カバーとからなる処理容器内において加熱体上に載置された基板を加熱処理する基板加熱装置であって、前記下部カバーは、前記加熱体を保持する底板と、前記底板の周囲に立設され前記加熱体を囲む壁部とからなり、前記壁部に加熱手段を設けたものである。   In order to achieve the above object, the present invention provides a substrate heating apparatus that heats a substrate placed on a heating body in a processing container including an upper cover and a lower cover, wherein the lower cover includes It consists of a bottom plate for holding the heating body and a wall portion standing around the bottom plate and surrounding the heating body, and a heating means is provided on the wall portion.

そして、上記の基板加熱装置における上部カバーが、天板と、前記天板の周囲に垂設された壁部とからなる場合には、前記垂設された壁部にも加熱手段を設けることが望ましい。   And when the upper cover in said board | substrate heating apparatus consists of a top plate and the wall part suspended around the said top plate, a heating means can also be provided in the said suspended wall part. desirable.

また、加熱手段としては、金属箔ヒーター又はシーズヒーターが好ましく用いられる。   As the heating means, a metal foil heater or a sheathed heater is preferably used.

本発明によれば、上部カバーと下部カバーとからなる処理容器内において加熱体上に載置された基板を加熱処理する基板加熱装置であって、前記下部カバーは、前記加熱体を保持する底板と、前記底板の周囲に立設され前記加熱体を囲む壁部とからなる基板加熱装置において、前記壁部に加熱手段を設けたため、基板の端縁部からの熱放出が抑制されて熱干渉が低減するので、基板の温度分布をより均一化することができる。   According to the present invention, there is provided a substrate heating apparatus that heat-treats a substrate placed on a heating body in a processing container including an upper cover and a lower cover, wherein the lower cover is a bottom plate that holds the heating body. And a wall heating device that is provided around the bottom plate and surrounds the heating element, since the heating means is provided on the wall, heat release from the edge of the substrate is suppressed, and heat interference Therefore, the temperature distribution of the substrate can be made more uniform.

更に、上部カバーが、天板と、前記天板の周囲に垂設された壁部とからなる場合には、前記垂設された壁部にも加熱手段を設けたため、処理容器外部からの熱影響を排除することにより、基板の温度分布を更に均一化することができる。   Further, in the case where the upper cover is composed of a top plate and a wall portion suspended around the top plate, since the heating means is also provided on the suspended wall portion, heat from the outside of the processing container is provided. By eliminating the influence, the temperature distribution of the substrate can be made more uniform.

以下に、本発明の実施の形態について、図面を参照して説明する。   Embodiments of the present invention will be described below with reference to the drawings.

本発明の第1の実施形態に係る基板加熱装置を図1に示す。   A substrate heating apparatus according to a first embodiment of the present invention is shown in FIG.

この基板加熱装置1は、下部カバー2と上部カバー3から構成される処理容器4内において、基板加熱体5上に載置された基板6を加熱処理するものである。   The substrate heating apparatus 1 heats a substrate 6 placed on a substrate heating body 5 in a processing container 4 composed of a lower cover 2 and an upper cover 3.

下部カバー2は底板2aの周囲に壁部2bを立設した構造を、上部カバー3は天板3aの周囲に壁部3bを垂設した構造を、それぞれ有しており、ともに熱伝導性に優れた材料であるアルミニウム又はステンレス鋼から製作されている。これら下部カバー2と上部カバー3を、互いの凹部が対向するようにOリング7を介して接続することにより処理容器4が構成される。   The lower cover 2 has a structure in which a wall portion 2b is erected around the bottom plate 2a, and the upper cover 3 has a structure in which a wall portion 3b is erected around the top plate 3a, both of which are thermally conductive. Made from excellent materials such as aluminum or stainless steel. The processing container 4 is configured by connecting the lower cover 2 and the upper cover 3 via an O-ring 7 so that the concave portions thereof face each other.

基板加熱体5は、ヒーター8を上下からそれぞれ加熱プレート9と押え板10により挟み込んだ構造からなり、下部カバー2の底板2a上に同心円状に配設された複数の支持ピン11により保持され、その側面は壁部2bにより一定の間隔をおいて囲まれている。   The substrate heating body 5 has a structure in which a heater 8 is sandwiched between a heating plate 9 and a holding plate 10 from above and below, and is held by a plurality of support pins 11 arranged concentrically on the bottom plate 2a of the lower cover 2, The side surface is surrounded by the wall 2b at a constant interval.

下部カバー2の壁部2bには、加熱手段である加熱ヒーター12が設置されている。この加熱ヒーター12は、金属箔ヒーター又はシーズヒーターを壁部2bの外周面上に巻き付けたものであり、断熱材13を介して外側から固定リング14で締めつけられることにより下部カバー2に固定されている。この断熱材13の材料としては、例えばフェルト、テフロンシート、石英ウール又はシリカ繊維を用いることができる。なお、加熱ヒーター12の固定方法は、このような機械的手段に限られるものではなく、壁部2bの外周面上に直接に貼付又は溶接してもよく、又はそれらを組み合わせてもよい。   On the wall 2b of the lower cover 2, a heater 12 as a heating means is installed. The heater 12 is obtained by winding a metal foil heater or a sheathed heater on the outer peripheral surface of the wall 2b, and is fixed to the lower cover 2 by being tightened by a fixing ring 14 from the outside via a heat insulating material 13. Yes. As the material of the heat insulating material 13, for example, felt, Teflon sheet, quartz wool, or silica fiber can be used. The fixing method of the heater 12 is not limited to such mechanical means, and may be directly affixed or welded on the outer peripheral surface of the wall 2b, or a combination thereof.

このような構成においては、基板加熱体5上に載置された基板6は、ヒーター8により下方から加熱されるとともに、中央部に比べて放熱が大きくなる端縁部が壁部2bを介して側方から加熱ヒーター12で加熱されることにより、その放熱が抑制されて熱干渉が低減するため、基板6の温度分布をより均一化することができる。   In such a configuration, the substrate 6 placed on the substrate heating body 5 is heated from below by the heater 8, and an edge portion where heat dissipation is larger than that of the central portion is interposed through the wall portion 2 b. Heating from the side by the heater 12 suppresses heat dissipation and reduces thermal interference, so that the temperature distribution of the substrate 6 can be made more uniform.

この加熱ヒーター12については、図2に示すように、周方向に複数に分割してもよく、それぞれの発熱量を調整することにより、基板6の温度分布を高い精度で均一化することができる。なお、図2においては、加熱ヒーター12を周方向に6つに分割しているが、必ずしもこの分割数に限定されるものではない。   As shown in FIG. 2, the heater 12 may be divided into a plurality of parts in the circumferential direction, and the temperature distribution of the substrate 6 can be made uniform with high accuracy by adjusting the amount of generated heat. . In FIG. 2, the heater 12 is divided into six in the circumferential direction, but the number is not necessarily limited.

本発明の第2の実施形態に係る基板加熱装置を図3に示す。なお、図1と同じ部分には同一の符号を付し、その説明を省略する。   FIG. 3 shows a substrate heating apparatus according to the second embodiment of the present invention. In addition, the same code | symbol is attached | subjected to the same part as FIG. 1, and the description is abbreviate | omitted.

本実施形態に係る基板加熱装置1は、第1の実施形態における上部カバー3の壁部3bに、加熱手段である加熱ヒーター15を設けたものである。この加熱ヒーター15は、下部カバー2における加熱ヒーター12の場合と同じく、金属箔ヒーター又はシーズヒーターを壁部3bの外周面上に巻き付けたものであり、断熱材16を介して外側から固定リング17で締めつけられることにより上部カバー3に固定されている。なお、加熱ヒーター15についても、壁部3bの外周面上に直接に貼付又は溶接してもよく、又はそれらと固定リング17との組み合わせにより固定してもよいことはもちろんである。   In the substrate heating apparatus 1 according to the present embodiment, a heater 15 as a heating unit is provided on the wall 3b of the upper cover 3 in the first embodiment. As in the case of the heater 12 in the lower cover 2, the heater 15 is obtained by winding a metal foil heater or a sheathed heater on the outer peripheral surface of the wall 3 b, and a fixing ring 17 from the outside via a heat insulating material 16. It is fixed to the upper cover 3 by tightening. Of course, the heater 15 may also be directly affixed or welded onto the outer peripheral surface of the wall 3 b, or may be fixed by a combination of them and the fixing ring 17.

このような構成においては、2つの加熱ヒーター12、15による側方からの加熱により基板6の端縁部からの熱放出が抑制されるとともに、処理容器4の外部からの熱影響を排除することができるため、基板6の温度分布を第1の実施形態の場合よりも更に均一化することができる。   In such a configuration, heat release from the edge portion of the substrate 6 is suppressed by side heating by the two heaters 12 and 15 and heat influence from the outside of the processing container 4 is eliminated. Therefore, the temperature distribution of the substrate 6 can be made more uniform than in the case of the first embodiment.

なお、上部カバー3の加熱ヒーター15についても、図2に示す例のように周方向に複数に分割することができ、同じく分割された加熱ヒーター12と組み合わせて発熱量を調整することにより、基板6の温度分布を高い精度で均一化することができる。   The heater 15 of the upper cover 3 can also be divided into a plurality of parts in the circumferential direction as in the example shown in FIG. 2, and the substrate can be adjusted by adjusting the amount of heat generated in combination with the divided heaters 12. 6 can be made uniform with high accuracy.

以上に説明した2つの実施形態においては、基板6として半導体ウェハを例にとると基板加熱装置1の断面は図2のように円形になるが、液晶ガラスを基板とした場合には矩形となることはいうまでもない。   In the two embodiments described above, when a semiconductor wafer is taken as an example of the substrate 6, the cross section of the substrate heating apparatus 1 is circular as shown in FIG. 2, but is rectangular when liquid crystal glass is used as the substrate. Needless to say.

本発明の第1の実施形態に係る基板加熱装置の断面図である。It is sectional drawing of the substrate heating apparatus which concerns on the 1st Embodiment of this invention. 図1に示すA−A矢視の断面図である。It is sectional drawing of the AA arrow shown in FIG. 本発明の第2の実施形態に係る基板加熱装置の断面図である。It is sectional drawing of the substrate heating apparatus which concerns on the 2nd Embodiment of this invention. 従来の基板加熱装置の断面図である。It is sectional drawing of the conventional board | substrate heating apparatus.

符号の説明Explanation of symbols

1 基板加熱装置
2 下部カバー
2a 底板
2b 壁部
3 上部カバー
3a 天板
3b 壁部
4 処理容器
5 基板加熱体
6 基板
7 Oリング
8 ヒーター
9 加熱プレート
10 押え板
11 支持ピン
12 下部カバー用加熱ヒーター
13 下部カバーの断熱材
14 下部カバーにおける固定リング
15 上部カバー用加熱ヒーター
16 上部カバーの断熱材
17 上部カバーにおける固定リング
DESCRIPTION OF SYMBOLS 1 Substrate heating apparatus 2 Lower cover 2a Bottom plate 2b Wall part 3 Upper cover 3a Top plate 3b Wall part 4 Processing container 5 Substrate heating body
6 Substrate 7 O-ring 8 Heater
9 Heating plate 10 Presser plate 11 Support pin
12 Heater for lower cover 13 Heat insulating material for lower cover 14 Fixing ring 15 for lower cover Heating heater for upper cover 16 Heat insulating material for upper cover 17 Fixing ring for upper cover

Claims (3)

上部カバーと下部カバーとからなる処理容器内において加熱体上に載置された基板を加熱処理する基板加熱装置であって、
前記下部カバーは、前記加熱体を保持する底板と、前記底板の周囲に立設され前記加熱体を囲む壁部とからなり、
前記壁部に加熱手段を設けた基板加熱装置。
A substrate heating apparatus for heat-treating a substrate placed on a heating body in a processing container composed of an upper cover and a lower cover,
The lower cover is composed of a bottom plate that holds the heating body, and a wall that stands around the bottom plate and surrounds the heating body,
The substrate heating apparatus which provided the heating means in the said wall part.
前記上部カバーが、天板と、前記天板の周囲に垂設された壁部とからなり、
前記垂設された壁部に加熱手段を設けた請求項1に記載の基板加熱装置。
The upper cover is composed of a top plate and a wall portion suspended around the top plate,
The substrate heating apparatus according to claim 1, wherein heating means is provided on the suspended wall portion.
前記加熱手段が、金属箔ヒーター又はシーズヒーターである請求項1又は2に記載の基板加熱装置。 The substrate heating apparatus according to claim 1, wherein the heating unit is a metal foil heater or a sheathed heater.
JP2006199518A 2006-07-21 2006-07-21 Apparatus for heating substrate Pending JP2008028177A (en)

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JP2006199518A JP2008028177A (en) 2006-07-21 2006-07-21 Apparatus for heating substrate

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JP2008028177A true JP2008028177A (en) 2008-02-07

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113122826A (en) * 2020-01-16 2021-07-16 中国电子科技集团公司第四十八研究所 PECVD equipment heating device

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JPH07254557A (en) * 1993-11-12 1995-10-03 Semiconductor Syst Inc Method of heating and cooling semiconductor wafer and heating and cooling device
JPH08130182A (en) * 1994-10-31 1996-05-21 Sigma Merutetsuku Kk Substrate heater
JP2001317872A (en) * 2000-05-02 2001-11-16 Noritake Co Ltd Multistatge heating furnace for large substrate, double side heating type far infrared ray panel heater, and method for feeding and exhausting air in the heating furnace
JP2001358049A (en) * 2000-06-13 2001-12-26 Fujitsu Ltd Near distance control device and near distance control method
JP2002100562A (en) * 2000-04-03 2002-04-05 Sigma Meltec Ltd Heat treatment system of substrate
JP2002324790A (en) * 2001-04-25 2002-11-08 Tokyo Electron Ltd Substrate treating unit
JP2003318091A (en) * 2002-04-24 2003-11-07 Tokyo Electron Ltd Heat treatment device and heat treatment method
JP2005150696A (en) * 2003-10-22 2005-06-09 Tokyo Electron Ltd Heat treatment apparatus and method therefor

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07254557A (en) * 1993-11-12 1995-10-03 Semiconductor Syst Inc Method of heating and cooling semiconductor wafer and heating and cooling device
JPH08130182A (en) * 1994-10-31 1996-05-21 Sigma Merutetsuku Kk Substrate heater
JP2002100562A (en) * 2000-04-03 2002-04-05 Sigma Meltec Ltd Heat treatment system of substrate
JP2001317872A (en) * 2000-05-02 2001-11-16 Noritake Co Ltd Multistatge heating furnace for large substrate, double side heating type far infrared ray panel heater, and method for feeding and exhausting air in the heating furnace
JP2001358049A (en) * 2000-06-13 2001-12-26 Fujitsu Ltd Near distance control device and near distance control method
JP2002324790A (en) * 2001-04-25 2002-11-08 Tokyo Electron Ltd Substrate treating unit
JP2003318091A (en) * 2002-04-24 2003-11-07 Tokyo Electron Ltd Heat treatment device and heat treatment method
JP2005150696A (en) * 2003-10-22 2005-06-09 Tokyo Electron Ltd Heat treatment apparatus and method therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113122826A (en) * 2020-01-16 2021-07-16 中国电子科技集团公司第四十八研究所 PECVD equipment heating device
CN113122826B (en) * 2020-01-16 2023-11-07 中国电子科技集团公司第四十八研究所 Heating device of PECVD (plasma enhanced chemical vapor deposition) equipment

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