CN113122826A - PECVD equipment heating device - Google Patents
PECVD equipment heating device Download PDFInfo
- Publication number
- CN113122826A CN113122826A CN202010047226.2A CN202010047226A CN113122826A CN 113122826 A CN113122826 A CN 113122826A CN 202010047226 A CN202010047226 A CN 202010047226A CN 113122826 A CN113122826 A CN 113122826A
- Authority
- CN
- China
- Prior art keywords
- heating
- heating plate
- radiation
- plate
- pecvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 101
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 24
- 230000005855 radiation Effects 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 description 8
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a heating device of PECVD equipment, which comprises a heating plate and a plurality of supporting rods arranged in the middle area of the heating plate, wherein a plurality of circles of heating resistance wires are arranged in the heating plate, the supporting rods are positioned at the inner sides of the heating resistance wires, and the heating device of the PECVD equipment also comprises a radiation heating part which is arranged below the heating plate. The invention has the advantages of simple structure, low cost, good heating uniformity, contribution to ensuring the process effect and the like.
Description
Technical Field
The invention relates to PECVD equipment, in particular to a heating device of the PECVD equipment.
Background
The PECVD (plasma Enhanced Chemical Vapor deposition) apparatus refers to a plasma Enhanced Chemical Vapor deposition apparatus. At present, a PECVD reaction chamber generally automatically loads and unloads a wafer, and in the process of loading and unloading the wafer, three support rods in the middle area of a heating plate are needed to lift up a substrate so as to make room for the substrate, so that a manipulator can extend to the lower part of the substrate to convey the wafer.
Because the heating plate needs to give way for the bracing piece space, it is inconvenient consequently that middle zone arranges the heating resistor silk to the resistance silk will be drawn forth from this department, lead to middle zone to have some can't arrange the heating resistor silk. In the process, the temperature of the middle area is lower because no heating resistance wire is arranged, and the process effect is further influenced.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide the PECVD equipment instant heating device which is simple in structure, low in cost and beneficial to ensuring the process effect.
In order to solve the technical problems, the invention adopts the following technical scheme:
the utility model provides a PECVD equipment heating device, includes heating plate and many the bracing pieces of locating the heating plate middle zone, be equipped with many rings of heating resistor silk in the heating plate, the bracing piece is located the inboard of heating resistor silk, PECVD equipment heating device still include the radiation heating part, the radiation heating part is located the below of heating plate.
As a further improvement of the above technical solution:
the radiation heating member is a surface heating member.
As a further improvement of the above technical solution:
the distance between the radiation heating component and the heating disc is adjustable.
Compared with the prior art, the invention has the advantages that: the heating part of the PECVD equipment heating device disclosed by the invention comprises a heating resistance wire and a radiation heating part, wherein the heating resistance wire mainly transfers heat to a substrate on the upper surface of a heating plate by heat conduction, the radiation heating part mainly transfers the heat to the middle area of the heating plate in a heat radiation mode, then the material in the middle area of the heating plate transfers the heat to the substrate above the heating plate by heat conduction, and the radiation heater performs temperature compensation on the middle area of the heating plate, which cannot be provided with the heating resistance wire, or provides a supplementary heat source, so that the temperature of the upper surface of the whole heating plate is ensured to be more uniform, and the process effect is ensured.
Drawings
FIG. 1 is a schematic perspective view of a heating apparatus of a PECVD apparatus of the present invention.
FIG. 2 is a schematic cross-sectional view of a heating apparatus of a PECVD apparatus of the present invention.
The reference numerals in the figures denote: 1. heating the plate; 2. a support bar; 3. a radiation heating member; 4. heating resistance wires; 5. a substrate.
Detailed Description
The invention is described in further detail below with reference to the figures and specific examples of the specification.
Fig. 1 to 2 show an embodiment of a heating apparatus for a PECVD device according to the present invention, the heating apparatus for a PECVD device of the present embodiment includes a heating plate 1 and a plurality of support rods 2 disposed in a middle region of the heating plate 1, a plurality of turns of heating resistance wires 4 are disposed in the heating plate 1, the support rods 2 are located inside the heating resistance wires 4, the heating apparatus for a PECVD device further includes a radiation heating part 3, and the radiation heating part 3 is disposed below the heating plate 1. The shape of the radiation heating component 3 can be, for example, a circle, a ring or other different structures, which can provide a supplementary heat source and ensure that the surface temperature area of the heating plate 1 is more uniform.
PECVD equipment heating device, the heating part includes heating resistor silk and radiant heating part, the heating resistor silk mainly relies on heat-conduction to transmit the substrate of heating plate upper surface with the heat, radiant heating part mainly transmits the heat to heating plate middle zone through thermal radiating mode, pass through the substrate of heat-conduction with heat transmission to the heating plate top by the material of heating plate middle zone again, radiant heating carries out temperature compensation to the middle zone that the heating plate can't arrange the heating resistor silk, or provide the supplementary heat source, ensure that the temperature of whole heating plate upper surface is more even, thereby guarantee technological effect.
In this embodiment, the radiation heating member 3 is a surface heating member.
In this embodiment, the distance between the radiation heating part 3 and the heating plate 1 is adjustable. The distance between the radiation heating part 3 and the heating plate 1 can be adjusted in the process of adjusting the thermal field, so that the temperature area of the upper surface of the heating plate 1 is more uniform.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Those skilled in the art can make numerous possible variations and modifications to the present invention, or modify equivalent embodiments to equivalent variations, without departing from the scope of the invention, using the teachings disclosed above. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical spirit of the present invention should fall within the protection scope of the technical scheme of the present invention, unless the technical spirit of the present invention departs from the content of the technical scheme of the present invention.
Claims (3)
1. The utility model provides a PECVD equipment heating device, includes heating plate (1) and many locates bracing piece (2) of heating plate (1) middle zone, be equipped with many circles heating resistor silk (4) in heating plate (1), bracing piece (2) are located the inboard of heating resistor silk (4), its characterized in that: the heating device of the PECVD equipment further comprises a radiation heating part (3), and the radiation heating part (3) is arranged below the heating plate (1).
2. A heating device for a PECVD apparatus according to claim 1, characterized in that: the radiation heating part (3) is a surface heating part.
3. A heating device for a PECVD apparatus according to claim 1 or 2, characterized in that: the distance between the radiation heating component (3) and the heating plate (1) is adjustable.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010047226.2A CN113122826B (en) | 2020-01-16 | 2020-01-16 | Heating device of PECVD (plasma enhanced chemical vapor deposition) equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010047226.2A CN113122826B (en) | 2020-01-16 | 2020-01-16 | Heating device of PECVD (plasma enhanced chemical vapor deposition) equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113122826A true CN113122826A (en) | 2021-07-16 |
| CN113122826B CN113122826B (en) | 2023-11-07 |
Family
ID=76771928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010047226.2A Active CN113122826B (en) | 2020-01-16 | 2020-01-16 | Heating device of PECVD (plasma enhanced chemical vapor deposition) equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113122826B (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004200156A (en) * | 2002-12-05 | 2004-07-15 | Ibiden Co Ltd | Metal heater |
| US20060096972A1 (en) * | 2004-10-28 | 2006-05-11 | Kyocera Corporation | Heater, wafer heating apparatus and method for manufacturing heater |
| JP2008028177A (en) * | 2006-07-21 | 2008-02-07 | Nippon Dennetsu Co Ltd | Apparatus for heating substrate |
| US20100323313A1 (en) * | 2008-03-21 | 2010-12-23 | Tokyo Elecron Limited | Stage structure and heat treatment apparatus |
| KR20130021750A (en) * | 2011-08-23 | 2013-03-06 | 엘지디스플레이 주식회사 | Plasma chemical vapor deposition device |
| CN104046965A (en) * | 2014-05-27 | 2014-09-17 | 中国电子科技集团公司第四十八研究所 | Radiant heating element, radiant heater and MOCVD reactor |
| CN104617008A (en) * | 2013-11-01 | 2015-05-13 | 沈阳芯源微电子设备有限公司 | Wafer heating device |
| CN106894002A (en) * | 2017-03-31 | 2017-06-27 | 昆山国显光电有限公司 | A kind of PECVD film formation devices and its film build method |
| US20180218923A1 (en) * | 2016-12-22 | 2018-08-02 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Hot vacuum drying device applied for flexible substrate |
-
2020
- 2020-01-16 CN CN202010047226.2A patent/CN113122826B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004200156A (en) * | 2002-12-05 | 2004-07-15 | Ibiden Co Ltd | Metal heater |
| US20060096972A1 (en) * | 2004-10-28 | 2006-05-11 | Kyocera Corporation | Heater, wafer heating apparatus and method for manufacturing heater |
| JP2008028177A (en) * | 2006-07-21 | 2008-02-07 | Nippon Dennetsu Co Ltd | Apparatus for heating substrate |
| US20100323313A1 (en) * | 2008-03-21 | 2010-12-23 | Tokyo Elecron Limited | Stage structure and heat treatment apparatus |
| KR20130021750A (en) * | 2011-08-23 | 2013-03-06 | 엘지디스플레이 주식회사 | Plasma chemical vapor deposition device |
| CN104617008A (en) * | 2013-11-01 | 2015-05-13 | 沈阳芯源微电子设备有限公司 | Wafer heating device |
| CN104046965A (en) * | 2014-05-27 | 2014-09-17 | 中国电子科技集团公司第四十八研究所 | Radiant heating element, radiant heater and MOCVD reactor |
| US20180218923A1 (en) * | 2016-12-22 | 2018-08-02 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Hot vacuum drying device applied for flexible substrate |
| CN106894002A (en) * | 2017-03-31 | 2017-06-27 | 昆山国显光电有限公司 | A kind of PECVD film formation devices and its film build method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113122826B (en) | 2023-11-07 |
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