CN210314482U - Device for producing graphene heterojunction through chemical vapor deposition - Google Patents
Device for producing graphene heterojunction through chemical vapor deposition Download PDFInfo
- Publication number
- CN210314482U CN210314482U CN201920688380.0U CN201920688380U CN210314482U CN 210314482 U CN210314482 U CN 210314482U CN 201920688380 U CN201920688380 U CN 201920688380U CN 210314482 U CN210314482 U CN 210314482U
- Authority
- CN
- China
- Prior art keywords
- tray
- disc
- heater
- groove
- support frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The utility model belongs to the chemical vapor deposition field specifically discloses a device of chemical vapor deposition production graphite alkene heterojunction, include: a liftable upper heater and a liftable lower heater which are arranged in the vertical direction and are opposite to each other; the support frame is fixedly arranged on the lower heater; the tray is arranged on one side of the support frame, which is far away from the lower heater, and is used for bearing a substrate; a suspended catalyst device for providing a catalyst directly above the substrate; the size of the cross section of the support frame parallel to the lower heater and the cross section of the tray are gradually reduced from the lower heater to the tray, and the surface of the tray for bearing a substrate is higher than the support frame; the supporting frame can be conductive, and the substrate is electrically connected with the supporting frame through a conductive wire embedded in the tray. The utility model discloses can improve the quality assurance of graphite alkene heterojunction.
Description
Technical Field
The utility model belongs to the technical field of chemical vapor deposition, especially a device of chemical vapor deposition production graphite alkene heterojunction.
Background
Chemical Vapor Deposition (CVD) is a technique in which a Chemical substance in a gaseous or Vapor state is chemically reacted at a gas-phase or gas-solid interface in a reactor by means of a Chemical reaction using various energy sources such as heat, plasma excitation, or light radiation to form a solid deposit.
The preparation of new materials by Chemical Vapor Deposition (CVD) has become an increasingly important method, and the most typical example is the large-area growth of graphene heterojunction by CVD. In the prior art apparatus, when a graphene heterojunction is prepared by Chemical Vapor Deposition (CVD), a substrate for producing the graphene heterojunction is generally directly placed on a heater, and a suspended catalyst for producing the graphene heterojunction is placed substantially above the substrate. Since the distance between the suspended catalyst and the substrate is controlled within a very small reaction distance, typically 100 μm, preferably 20 μm to 50 μm, during the preparation of the graphene heterojunction. In the reaction process, the suspended catalyst is easy to contact with the substrate, so that the quality of the produced graphene heterojunction is affected, and a circuit detection system is often arranged for realizing the contact detection judgment between the substrate and the catalyst.
The prior device has the following defects and shortcomings:
1. on placing the heater to the base plate of production graphite alkene heterojunction, shortened the heater itself from the distance between the support plate that bears the weight of suspension catalyst, and then easily lead to the support plate to be heated deformation, the support plate is heated the shape and is changeed and lead to the contact of suspension catalyst and base plate, and then more difficult assurance production the quality of the graphite alkene heterojunction who obtains.
2. The substrate for producing the graphene heterojunction is placed on the heater, so that the relative distance between the support plate and the heater is short and approximately equal to the reaction distance, the relative surface area of the support plate and the heater is large, the support plate is easy to be influenced by the heater and has a thermal deformation phenomenon, the contact between the surface of the heater facing the suspended catalyst and the support plate is caused by the existence of the phenomenon and the specific device environment with the large relative surface area of the support plate and the heater, the contact between the heater and the support plate can influence the accuracy of a circuit detection system for detecting and judging the contact between the substrate and the catalyst, and the quality of the produced graphene heterojunction can not be effectively guaranteed.
In conclusion, the device for placing the substrate for producing the graphene heterojunction on the heater in the prior art cannot effectively ensure the quality of the produced graphene heterojunction.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a device of chemical vapor deposition production graphite alkene heterojunction to solve not enough among the prior art, it can improve the quality assurance of graphite alkene heterojunction.
The utility model adopts the technical scheme as follows:
an apparatus for chemical vapor deposition production of graphene heterojunctions, the apparatus comprising:
a liftable upper heater and a liftable lower heater which are arranged in the vertical direction and are opposite to each other;
the support frame is fixedly arranged on the lower heater and is positioned between the lower heater and the upper heater;
the tray is arranged on one side of the support frame, which is far away from the lower heater, and is used for bearing a substrate;
a suspended catalyst device for providing a catalyst directly above the substrate;
the size of the cross section of the support frame parallel to the lower heater and the cross section of the tray are gradually reduced from the lower heater to the tray, and the surface of the tray for bearing a substrate is higher than the support frame;
the supporting frame can be conductive, and the substrate is electrically connected with the supporting frame through a conductive wire embedded in the tray.
In the apparatus for producing a graphene heterojunction by chemical vapor deposition, preferably, the material of the support frame is one of tungsten, molybdenum and tantalum.
The apparatus for producing a graphene heterojunction by chemical vapor deposition as described above, wherein preferably, the support frame comprises a plurality of first support columns;
each first supporting column is uniformly arranged on the lower heater, deviates from the extension of the lower heater, and is connected with and bears the tray.
The device for producing graphene heterojunction by chemical vapor deposition as described above, wherein preferably, the end face of the first support column connected to the tray is provided with a jaw for fixedly connecting the tray.
The device for producing the graphene heterojunction by the chemical vapor deposition, wherein preferably, a sub-frame is arranged between two adjacent first support columns;
the sub-frame supports and fixes two first supporting columns adjacent to the sub-frame.
The device for producing graphene heterojunction by chemical vapor deposition as described above, wherein preferably, the sub-frame comprises a first longitudinal column and a first transverse column which are arranged in a crossed manner;
one end of the first longitudinal column is fixedly connected with the lower heater, the other end of the first longitudinal column is fixedly connected with the middle part of the first transverse column, and two adjacent first supporting columns are fixedly connected with two ends of the first transverse column respectively.
The device for producing graphene heterojunction by chemical vapor deposition as described above, wherein preferably, the first transverse column comprises two fixedly connected first sub transverse columns;
one end of the first sub transverse column is fixedly connected with the first supporting column adjacent to the first sub transverse column, and the other end of the first sub transverse column is fixedly connected with the first longitudinal column adjacent to the first sub transverse column; and one end of the first sub-transverse column fixedly connected with the first longitudinal column is lower than one end of the first sub-transverse column fixedly connected with the first supporting column.
The device for producing a graphene heterojunction through chemical vapor deposition as described above, wherein preferably, a first groove is disposed on a surface of the tray for supporting the substrate, a first conductive plate is disposed in the first groove, and the substrate can be disposed on the first conductive plate;
a first through groove is formed in the tray, is vertical to and communicated with the first groove, and extends to the surface of the opposite side of the tray;
a first conductive wire is embedded in the first through groove, one end of the first conductive wire is connected with the first conductive plate, and the other end of the first conductive wire is connected with the support frame.
The apparatus for producing a graphene heterojunction by chemical vapor deposition as described above, wherein preferably, the tray comprises a first tray and a second tray which are placed in parallel and fixedly connected;
the first disc is positioned above the second disc, the first disc and the second disc are coaxially arranged, and the area of the first disc is smaller than that of the second disc;
the second plate is fixedly connected with the supporting frame;
the surface of the first disc, which is far away from the second disc, is provided with the first groove, and the first conductive plate can be placed in the first groove;
a part of the first through groove is formed in the first disc, the first through groove is vertical and communicated with the first groove, and the other part of the first through groove extends to the surface, far away from the first disc, of the second disc;
the surface of the first disc far away from the second disc is higher than the supporting frame.
The device for producing a graphene heterojunction by chemical vapor deposition as described above, wherein preferably, a second groove is provided on a surface of the second disc away from the first disc;
the second groove is vertical to and communicated with the first through groove in the second disc, and the second groove is used for embedding one end, connected with the support frame, of the first conducting wire on the surface, far away from the first disc, of the second disc.
The apparatus for producing a graphene heterojunction by chemical vapor deposition as described above, wherein preferably the suspended catalyst apparatus comprises:
a rotatable support plate having one or more perforations for receiving catalyst disposed between the upper heater and the tray.
The apparatus for producing a graphene heterojunction by chemical vapor deposition as described above, wherein the tray is preferably a transparent material resistant to high temperature.
The device for producing graphene heterojunction by chemical vapor deposition as described above, wherein preferably, the lower heater and the upper heater each comprise a heater housing, a heating plate disposed in the heater housing, and a heating wire wound on the heating plate;
a ceramic plate is fixedly arranged on one side, facing the tray, of the heater shell;
the support frame is fixedly arranged on the ceramic plate of the lower heater.
Compared with the prior art, the utility model provides a device of chemical vapor deposition production graphite alkene heterojunction supports the tray that is used for bearing the weight of the base plate through the support frame, has avoided the base plate of production graphite alkene heterojunction direct closely to place on lower heater, but utilizes the heat radiation field of two heat sources of upper heater and lower heater to carry out space non-contact's radiant heating. In the process, the temperature of the substrate, namely the reflection temperature, is ensured to be 900-1200 ℃. Meanwhile, the temperature is only focused near the reaction zone, the heat distribution around the reaction zone can be properly reduced, and the thermal deformation of the suspended catalyst device in the space around the reaction zone can be reduced. The suspended catalyst device includes a carrier plate having one or more perforations for receiving catalyst disposed between the upper heater and the tray. The thermal deformation of the suspension catalyst device is reduced, and the reduction of the thermal deformation of the suspension catalyst device comprises the reduction of the thermal deformation of the suspension catalyst, so that the contact frequency of the substrate and the suspension catalyst can be reduced to a certain extent, and the quality of the obtained graphene heterojunction is ensured. The thermal deformation of the suspension catalyst device is reduced, and the thermal deformation of the carrier plate loaded with the suspension catalyst is reduced, so that the contact frequency of the substrate and the suspension catalyst can be reduced to a certain extent, and the quality of the obtained graphene heterojunction is ensured. On the macroscopic expression of the device structure, the distance between the whole suspension catalyst device and the heater is increased, on one hand, the suspension catalyst device is prevented from contacting with the heater, namely the heater is in contact with the heater, and on the other hand, the heat radiation deformation effect on the whole suspension catalyst device is reduced. In addition, through the arrangement that the size of the cross section of the support frame parallel to the lower heater and the cross section of the tray are gradually reduced from the lower heater to the tray, and the surface of the tray for bearing the substrate is higher than the support frame, a support frame in a pyramid shape with a large lower part and a small upper part is arranged, the tray is arranged at the top of the support frame, and the surface of the tray for bearing the substrate is higher than the support frame, namely the surface of the tray for bearing the substrate is higher than the highest part of the support frame, so that the suspension catalyst device is further ensured not to be contacted with the lower heater, and not to be contacted and conducted with the support frame. On this basis, when the circuit detection device who connects between support frame and suspension catalyst device switches on, what detect can only be the contact between base plate and the catalyst switches on, improved the circuit detection system's that is used for the contact detection between base plate and the catalyst to judge the degree of accuracy, and then can effectively guarantee the quality of the graphene heterojunction that the production obtained.
Drawings
Fig. 1 is a schematic structural diagram of an apparatus for producing a graphene heterojunction by chemical vapor deposition according to an embodiment of the present invention;
FIG. 2 is a structural view showing one direction in which the support is provided on the lower heater;
FIG. 3 is a schematic view of a direction structure of the supporting tray;
fig. 4 is a schematic view of one direction structure of the tray.
Description of reference numerals:
1-an upper heater;
2-a lower heater;
3-support frame, 31-first support column, 311-first straight column, 312-first bent column, 313-second bent column, 32-jaw, 33-subframe, 331-first longitudinal column, 332-first transverse column;
4-tray, 41-first disc, 42-second disc;
5-a ceramic plate;
6-a suspended catalyst device;
7-substrate.
Detailed Description
The embodiments described below by referring to the drawings are exemplary only for explaining the present invention, and should not be construed as limiting the present invention.
Through a large number of experiments, the applicant of the present application finds that when a graphene heterojunction is produced based on Chemical Vapor Deposition (CVD), a substrate is directly placed on a heater, and a series of defects and deficiencies caused by a short distance between the heater and a carrier plate exist, specifically:
1. on placing the heater to the base plate of production graphite alkene heterojunction, shortened the heater itself from the distance between the support plate that bears the weight of suspension catalyst, and then easily lead to the support plate to be heated deformation, the support plate is heated the shape and is changeed and lead to the contact of suspension catalyst and base plate, and then more difficult assurance production the quality of the graphite alkene heterojunction who obtains.
2. The substrate for producing the graphene heterojunction is placed on the heater, so that the relative distance between the support plate and the heater is short and approximately equal to the reaction distance, the relative surface area of the support plate and the heater is large, the support plate is easy to be influenced by the heater and has a thermal deformation phenomenon, the surface of the heater facing the suspended catalyst and the support plate are easy to contact due to the existence of the phenomenon and the specific device environment with the large relative surface area of the support plate and the heater, the contact of the heater and the support plate can influence the accuracy of a circuit detection system for detecting and judging the contact between the substrate and the catalyst, and the quality of the produced graphene heterojunction can not be effectively guaranteed.
Based on the above defects and shortcomings, the applicant of the present application has carried out improvement work on the existing device and has proposed a patent application of a device for producing graphene heterojunction by chemical vapor deposition.
As shown in fig. 1 to 4, an apparatus for producing a graphene heterojunction by chemical vapor deposition according to an embodiment of the present application includes: a liftable upper heater 1 and a liftable lower heater 2 which are arranged in the vertical direction and are opposite to each other; the device comprises a support frame 3 which is fixedly arranged on the lower heater 2 and is positioned between the lower heater 2 and the upper heater 1, a tray 4 which is arranged on one side of the support frame 3 far away from the lower heater 2 and is used for bearing a substrate 7, and a suspended catalyst device 6 which is used for providing a catalyst to the position right above the substrate 7. And in this structure, the size of the cross section of the support frame 3 parallel to both the lower heater 2 and the tray is gradually reduced from the lower heater 2 to the tray 4, and the surface of the tray 4 for carrying the substrate 7 is higher than the support frame 3; meanwhile, the support frame 3 is conductive, and the substrate 7 is electrically connected with the support frame 3 through a conductive wire embedded in the tray 4.
The device for producing the graphene heterojunction by the chemical vapor deposition of the structure supports the tray 4 for bearing the substrate 7 through the support frame 3, avoids the situation that the substrate 7 for producing the graphene heterojunction is directly placed on the lower heater 2 in a short distance, and carries out space non-contact radiation heating by utilizing heat radiation fields of the two heat sources of the upper heater 1 and the lower heater 2. In this process, the temperature of the substrate 7, i.e., the reflection temperature, is ensured to be generally 900 to 1200 ℃. Meanwhile, the temperature is only focused near the reaction zone, the heat distribution around the reaction zone can be properly reduced, and the thermal deformation of the suspended catalyst device in the space around the reaction zone can be reduced. The suspended catalyst device 6 comprises a carrier plate with one or more perforations for receiving catalyst, arranged between the upper heater 1 and the tray 4. The thermal deformation of the suspension catalyst device 6 is reduced, and the reduction of the thermal deformation of the suspension catalyst device comprises the reduction of the thermal deformation of the suspension catalyst, so that the contact frequency of the substrate 7 and the suspension catalyst can be reduced to a certain extent, and the quality of the obtained graphene heterojunction is further ensured. The thermal deformation of the suspended catalyst device is reduced, and the thermal deformation of the carrier plate loaded with the suspended catalyst is reduced, so that the contact frequency of the substrate 7 and the suspended catalyst can be reduced to a certain extent, and the quality of the obtained graphene heterojunction is ensured. On the macroscopic expression of the device structure, the distance between the whole suspension catalyst device 6 and the heater is increased, on one hand, the contact between the suspension catalyst device 6 and the heater, namely the lower heater 2, is avoided, and on the other hand, the heat radiation deformation effect on the whole suspension catalyst device 6 is reduced. In addition, by the arrangement that the size of the cross section of the support frame 3 parallel to the lower heater 2 and the cross section of the tray are gradually reduced from the lower heater 2 to the tray 4, and the surface of the tray 4 for bearing the substrate 7 is higher than the support frame 3 ", the support frame 3 is provided with a pyramid shape with a larger lower part and a smaller upper part, the tray 4 is arranged at the top of the support frame 3, and the surface of the tray 4 for bearing the substrate 7 is higher than the support frame 3", that is, the surface of the tray 4 for bearing the substrate 7 is higher than the highest part of the support frame 3, so that the suspension catalyst device 6 is further ensured not to be in contact with the lower heater 2, and the suspension catalyst device 6 is also not in contact conduction with the support frame 3. On this basis, when the circuit detection device connected between the support frame 3 and the suspension catalyst device 6 is not shown in the figure to be conducted, only the contact conduction between the substrate 7 and the catalyst can be detected, so that the accuracy of the circuit detection system for detecting and judging the contact between the substrate 7 and the catalyst is improved, and the quality of the produced graphene heterojunction can be effectively ensured.
In this embodiment, the tray 4 is made of a high temperature-resistant transparent insulating material, preferably a transparent quartz material, and the transparent quartz can ensure the heating uniformity of the heated substrate 7; on the other hand, quartz can withstand high temperatures up to 1000 ℃, and the heating effect of the heated substrate 7 can be ensured; furthermore, quartz can also be used as a barrier material to prevent dust pollution caused by the heater.
In addition, in this embodiment, the upper heater 1 and the lower heater 2 are used to provide a growth temperature suitable for a new material, namely, a graphene heterojunction, to the reaction zone, i.e., the region above the tray 4 between the upper heater 1 and the lower heater 2.
In an embodiment, the lower heater 2 and the upper heater 1, which are opposite to each other and can be lifted in a vertical direction, are two heaters spaced apart from each other by a certain distance, the lifting of the lower heater 2 and the upper heater 1 can be realized by means of a motor shaft or other fixing members, for example, the lower heater 2 located below is used for directly heating the substrate 7, for example, and the upper heater 1 located above is used for directly heating the substrate 7 and/or a catalyst suspended on a carrier plate, thereby providing a temperature suitable for a new material to be prepared, for example, a temperature at which graphene and/or a graphene heterojunction grows on the substrate 7, for example, in a range of 900 to 1200 ℃ in the reaction zone. The lower heater 2 below is provided on its surface with a tray 4 for placing a substrate 7, which substrate 7 may be, for example, a silicon wafer, a substrate with a hexagonal boron nitride coating on its surface, or the like.
The lower heater 2 and the upper heater 1 both comprise a heater shell, a heating plate arranged in the heater shell and a heating wire wound on the heating plate; the heating wire is, for example and without limitation, a tantalum heating wire, or tungsten may be used as the heating wire, and a ceramic plate 5 is fixedly arranged on one side of the heater shell facing the tray 4; the support frame 3 is fixedly arranged on the ceramic plate 5 of the lower heater 2. The ceramic plate 5 has a uniform heat conduction function, so that the uniformity of heat emitted by a heat source is ensured, and meanwhile, the ceramic plate 5 can be used as a barrier material for blocking dust pollution possibly brought by a heater. Furthermore, the use of a high temperature resistant transparent material at the heated element end again ensures efficient heat transfer, i.e. absorption of the thermal radiation of the heated substrate 7. In practice, the ceramic plate 5 is preferably a boron nitride ceramic plate.
In the embodiment of the present application, when the liftable lower heater 2 and the liftable upper heater 1 are preferably implemented by driving the heaters by motors, the motors used are preferably stepper motors, such as those available from the british flying company, which are used to control the vertical movement of the lower heater 2 and the upper heater 1. In the present embodiment, both the lower heater 2 and the upper heater 1 can be freely moved in the vertical direction, facilitating the placement of the substrate 7 and/or the suspended catalyst device 6.
In addition, when a new material such as a graphene heterojunction is produced based on Chemical Vapor Deposition (CVD), it is generally required to be at a temperature of 900 to 1200 ℃ as a growth temperature of the new material, and at such a high temperature, it is required to sufficiently deal with thermal deformation of a material used for equipment. In the present embodiment, the thermal deformation of the support frame 3 is particularly considered. In the present embodiment, the support frame 3 is provided by the selection of materials and the design of the structure.
Specifically, in terms of material selection, conductive high-temperature-resistant high-strength metals, such as tungsten, molybdenum, tantalum; non-conductive high strength ceramics such as silicon carbide, boron nitride, quartz, etc. may also be selected. Tungsten is preferred for this embodiment for its combined cost and ease of processing.
Specifically, in terms of structural design, the support frame 3 is provided in the following structure. The support frame 3 comprises a plurality of first support columns 31; each of the first support columns 31 is uniformly disposed on the lower heater 2, extends away from the lower heater 2, and is commonly connected to and supports the tray 4.
In a specific arrangement, as shown in fig. 2, at least 3 first supporting columns 31 may be provided to ensure the stability of the whole structure of the supporting frame 3. The preferred 4 first support columns 31 that adopt of this embodiment, 4 first support columns 31 all adopt the tungsten material preparation, and evenly set up heater 2, 4 first support columns 31 keep away from down the one end of heater 2 and connect jointly and bear tray 4 has guaranteed the stability of tray 4.
In order to ensure a stable connection between the first supporting column 31 and the tray 4, in the present embodiment, a jaw 32 for fixedly connecting the tray 4 is disposed on an end surface of the first supporting column 31 connected to the tray 4. The edge of the tray 4 is embedded in the jaw 32, so that the end part of the first supporting column 31 is in surface contact connection with the tray 4, the insecurity caused by only point contact connection between the end part of the first supporting column 31 and the tray 4 is avoided, and the accidental falling of the tray 4 is avoided. Evenly set up four first support columns 31 on the week side of tray 4, four first support columns 31 all are connected through keeping in touch with tray 4, can effectively avoid the emergence of the unexpected condition of droing of tray 4 that leads to when first support column 31 is heated and is out of shape.
Meanwhile, as a preferred embodiment of the present application, a sub-frame 33 is disposed between any two adjacent first support columns 31; the sub-frame 33 supports and fixes two first support columns 31 adjacent to the sub-frame 33. The sub-frame 33 can play a role in reinforcing and fixing the support frame 3 formed by the first support columns 31, and the stability of the tray 4 is effectively guaranteed. The submount 33 is also preferably made of tungsten material.
As a preferred technical solution of this embodiment, please refer to fig. 2 and fig. b, the sub-frame 33 includes a first vertical column 331 and a first horizontal column 332 which are arranged in a crossing manner; one end of the first longitudinal column 331 is fixedly connected to the lower heater 2, the other end of the first longitudinal column 331 is fixedly connected to the middle portion of the first transverse column 332, and two ends of the first transverse column 332 are respectively and fixedly connected to two adjacent first supporting columns 31. The sub-frame 33 composed of the first longitudinal columns 331 and the first transverse columns 332 is a crisscross support, and the structure is more stable. Simultaneously, 4 first support columns 31 cooperate and all set up between arbitrary two adjacent first support columns 31 have a stable cage type support frame 3 that the sub-frame 33 of vertically and horizontally staggered structure formed, stability is better.
As a preferred technical solution of this embodiment, the first transverse column 332 includes two first sub transverse columns fixedly connected; one end of the first sub-transverse column is fixedly connected with the first supporting column 31 adjacent to the first sub-transverse column, and the other end of the first sub-transverse column is fixedly connected with the first longitudinal column 331 adjacent to the first sub-transverse column; and a certain included angle is formed between the two first sub transverse columns. Two contained angle between the first sub-spreader can be according to the setting of the pendulum cloth of two adjacent first support columns 31, does not do specific restriction here to reach the effect that better supports support frame 3 and do the standard.
As a preferable configuration of this embodiment, one end of the first sub-lateral column fixedly connected to the first longitudinal column 331 is lower than one end of the first sub-lateral column fixedly connected to the first support column 31. This arrangement provides not only the right-left direction support force for the adjacent two first support columns 31, but also the upward support force for the first support columns 31, which has a certain restraining effect on the tray 4 from sinking due to the high temperature deformation of the first support columns 31.
In a specific implementation, the inclination of the first sub-transverse column upwards relative to the horizontal direction is 8-15 degrees, inclusive. Preferably, the angle of inclination is 10 °.
As a preferred technical solution of the present embodiment, the first support column 31 includes a first straight column 311, a first bent column 312 and a second bent column 313 which are connected in sequence and integrally formed; one end of the first straight column 311 far away from the first bent column 312 is fixedly connected with the lower heater 2; the inclination of the first bent column 312 facing upwards in the horizontal direction is greater than that of the second bent column 313 facing upwards in the horizontal direction; the end of the first longitudinal pillar 331 far from the lower heater 2 is higher than the end of the first bent pillar 312 far from the first straight pillar 311, and is lower than the end of the second bent pillar 313 far from the first bent pillar 312.
At the time of a specific operation, an optimum placement position of the tray 4 can be found by the heat distribution of the lower heater 2, and then the structure of the first support column 31 is set according to the optimum placement position of the tray 4. In the present embodiment, please continue to refer to fig. 2 and fig. 3, a first straight pillar 311, a first bent pillar 312, and a second bent pillar 313 are disposed and integrally formed in sequence, the bending directions of the first bent pillar 312 and the second bent pillar 313 are substantially consistent, 4 first support pillars 31 with the same shape are spatially arranged, one ends of the same sides of the first support pillars are uniformly disposed on a circumference, that is, on the lower heater 2, and one ends of the same sides of the first support pillars extend toward another circumference, that is, the circumference of the tray 4, and the area of the tray 4 is smaller than the area of the circumference on which the 4 first support pillars 31 on the lower heater 2 are arranged, so that the 4 first support pillars 31 are spatially arranged in a spherical shape, and have better stability.
In order to ensure the normal embodiment of the circuit detection device connected between the support frame 3 and the suspended catalyst device 6, not only the support frame 3 is set to be electrically conductive, but also the electrical conduction between the support frame 3 and the substrate 7 is designed, specifically: a first groove is formed in the surface, used for bearing the substrate 7, of the tray 4, a first conductive plate is placed in the first groove, and the substrate 7 can be placed on the first conductive plate; a first through groove is formed in the tray 4, is vertical to and communicated with the first groove, and extends to the opposite side surface of the tray 4; a first conductive wire is embedded in the first through groove, one end of the first conductive wire is connected with the first conductive plate, and the other end of the first conductive wire is connected with the support frame 3. The embedding of the first conductive wire in the tray 4 is realized through the structure, the embedding structure is stable and firm, and the reliability of the circuit detection device connected between the support frame 3 and the suspension catalyst device 6 can be ensured.
As a preferred technical solution of the present embodiment, please refer to fig. 4, in order to ensure that the suspended catalyst device 6 is not in contact with and conducted with the support frame 3, the tray 4 provided in the present embodiment includes a first tray 41 and a second tray 42 which are disposed in parallel and fixedly connected; the first disk 41 is located above the second disk 42, and the two disks are coaxially arranged, and the area of the first disk 41 is smaller than that of the second disk 42; the second plate 42 is fixedly connected with the support frame 3; the surface of the first disk 41 far away from the second disk 42 is provided with the first groove, and the first conductive plate can be placed in the first groove; a part of the first through groove is arranged in the first disc 41, the first through groove is vertical and communicated with the first groove, and the other part of the first through groove extends to the surface of the second disc 42 away from the first disc 41; the surface of the first plate 41 remote from the second plate 42 is higher than the support frame 3.
Further, a second groove is arranged on the surface of the second disc 42 away from the first disc 41; the second groove is vertical to and communicated with the first through groove in the second disc 42, and the second groove is used for embedding one end of the first conductive wire connected with the support frame 3 on the surface of the second disc 42 far away from the first disc 41.
In a specific embodiment, the platinum foil may be cut into strip-shaped long tentacles as the first conductive wires, and the strip-shaped long tentacles are placed into the dug first through grooves and the second grooves to electrically connect the substrate 7 and the support frame 3. It should be noted that, the number of the first through grooves and the number of the second through grooves are consistent with the number of the first supporting columns 31 included in the supporting frame 3, so as to ensure the omnibearing detection of the substrate 7.
Preferably, the suspended catalyst device 6 comprises a support plate arranged between the upper heater 1 and the tray 4 and having one or more perforations for receiving a catalyst, the support plate being preferably made of one of tungsten, molybdenum, tantalum, preferably tungsten, having high strength and being resistant to high temperatures. The suspension catalyst device 6 can be placed in a space through a rotating shaft penetrating through the center of the support plate, and at the moment, the support plate is a rotatable support plate. The suspension catalyst device 6 may be configured to implement a space by a slide rail disposed on the support plate, and this embodiment is not limited in particular.
In conclusion, the embodiment provides a device for producing a graphene heterojunction by chemical vapor deposition, and the device adopts the tray 4 arranged on the lower heater 2 and used for supporting the substrate 7 by the support frame 3, so that the heat is focused in a reaction zone, the influence of the heat on other device equipment is avoided, the influence of the thermal deformation of other device equipment on the production of the graphene heterojunction is reduced, the accuracy of a circuit detection system for detecting and judging the contact between the substrate 7 and a catalyst is ensured through the change of the correspondence of the spatial position of the transposition equipment, and the quality of the produced graphene heterojunction is further ensured.
The structure, features and effects of the present invention have been described in detail above according to the embodiment shown in the drawings, and the above description is only the preferred embodiment of the present invention, but the present invention is not limited to the implementation scope shown in the drawings, and all changes made according to the idea of the present invention or equivalent embodiments modified to the same changes should be considered within the protection scope of the present invention when not exceeding the spirit covered by the description and drawings.
Claims (13)
1. An apparatus for chemical vapor deposition production of graphene heterojunctions, the apparatus comprising:
a liftable upper heater (1) and a liftable lower heater (2) which are arranged in the vertical direction and are opposite to each other;
the support frame (3) is fixedly arranged on the lower heater (2) and is positioned between the lower heater (2) and the upper heater (1);
the tray (4) is arranged on one side, away from the lower heater (2), of the support frame (3) and used for bearing a substrate;
a suspended catalyst device (6) for supplying a catalyst directly above the substrate;
the size of the cross section of the support frame (3) parallel to the lower heater (2) and the tray is gradually reduced from the lower heater (2) to the tray (4), and the surface of the tray (4) for bearing the substrate is higher than the support frame (3);
the supporting frame (3) can conduct electricity, and the substrate is electrically connected with the supporting frame (3) through a conducting wire embedded in the tray (4).
2. The apparatus for producing graphene heterojunction according to claim 1, wherein: the support frame (3) is made of one of tungsten, molybdenum and tantalum.
3. The apparatus for producing graphene heterojunction according to claim 1, wherein: the support frame (3) comprises a plurality of first support columns (31);
each first supporting column (31) is uniformly arranged on the lower heater (2), extends away from the lower heater (2), and is connected with and bears the tray (4) together.
4. The apparatus for producing graphene heterojunction according to claim 3, wherein: the end face of one end, connected with the tray (4), of the first supporting column (31) is provided with a jaw (32) which is used for fixedly connecting the tray (4).
5. The apparatus for producing graphene heterojunction according to claim 3, wherein: a sub-frame (33) is arranged between every two adjacent first supporting columns (31);
the sub-frame (33) supports and fixes two first supporting columns (31) adjacent to the sub-frame (33).
6. The apparatus for producing graphene heterojunction according to claim 5, wherein: the sub-frame (33) comprises a first longitudinal column (331) and a first transverse column (332) which are arranged in a crossed manner;
one end of the first longitudinal column (331) is fixedly connected with the lower heater (2), the other end of the first longitudinal column (331) is fixedly connected with the middle part of the first transverse column (332), and two adjacent first supporting columns (31) are respectively and fixedly connected with two ends of the first transverse column (332).
7. The apparatus for producing graphene heterojunction according to claim 6, wherein: the first transverse column (332) comprises two fixedly connected first sub transverse columns;
one end of the first sub transverse column is fixedly connected with the first supporting column (31) adjacent to the first sub transverse column, and the other end of the first sub transverse column is fixedly connected with the first longitudinal column (331) adjacent to the first sub transverse column; and one end of the first sub transverse column fixedly connected with the first longitudinal column (331) is lower than one end of the first sub transverse column fixedly connected with the first supporting column (31).
8. The apparatus for producing graphene heterojunction according to claim 1, wherein: a first groove is formed in the surface, used for bearing the substrate, of the tray (4), a first conductive plate is placed in the first groove, and the substrate can be placed on the first conductive plate;
a first through groove is formed in the tray (4), is vertical and communicated with the first groove, and extends to the surface of the opposite side of the tray (4);
a first conductive wire is embedded in the first through groove, one end of the first conductive wire is connected with the first conductive plate, and the other end of the first conductive wire is connected with the support frame (3).
9. The apparatus for producing graphene heterojunction according to claim 8, wherein: the tray (4) comprises a first tray and a second tray which are placed in parallel and fixedly connected;
the first disc is positioned above the second disc, the first disc and the second disc are coaxially arranged, and the area of the first disc is smaller than that of the second disc;
the second plate is fixedly connected with the supporting frame (3);
the surface of the first disc, which is far away from the second disc, is provided with the first groove, and the first conductive plate can be placed in the first groove;
a part of the first through groove is formed in the first disc, the first through groove is vertical and communicated with the first groove, and the other part of the first through groove extends to the surface, far away from the first disc, of the second disc;
the surface of the first disc, which is far away from the second disc, is higher than the support frame (3).
10. The apparatus for producing graphene heterojunction according to claim 9, wherein: a second groove is formed in the surface, away from the first disc, of the second disc;
the second groove is vertical to and communicated with the first through groove in the second disc, and the second groove is used for embedding one end, connected with the support frame (3), of the first conducting wire on the surface, far away from the first disc, of the second disc.
11. An apparatus for producing graphene heterojunctions by chemical vapor deposition according to any one of claims 1 to 10, wherein: the suspended catalyst device (6) comprises:
a rotatable carrier plate with one or more perforations for receiving catalyst, arranged between the upper heater (1) and the tray (4).
12. An apparatus for producing graphene heterojunctions by chemical vapor deposition according to any one of claims 1 to 10, wherein: the tray (4) is made of high-temperature-resistant transparent material.
13. An apparatus for producing graphene heterojunctions by chemical vapor deposition according to any one of claims 1 to 10, wherein: the lower heater (2) and the upper heater (1) respectively comprise a heater shell, a heating plate arranged in the heater shell and a heating wire wound on the heating plate;
a ceramic plate (5) is fixedly arranged on one side, facing the tray (4), of the heater shell;
the support frame (3) is fixedly arranged on the ceramic plate (5) of the lower heater (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920688380.0U CN210314482U (en) | 2019-05-14 | 2019-05-14 | Device for producing graphene heterojunction through chemical vapor deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920688380.0U CN210314482U (en) | 2019-05-14 | 2019-05-14 | Device for producing graphene heterojunction through chemical vapor deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210314482U true CN210314482U (en) | 2020-04-14 |
Family
ID=70138465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920688380.0U Active CN210314482U (en) | 2019-05-14 | 2019-05-14 | Device for producing graphene heterojunction through chemical vapor deposition |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210314482U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110042368A (en) * | 2019-05-14 | 2019-07-23 | 合肥本源量子计算科技有限责任公司 | A kind of device of chemical vapor deposition production graphene hetero-junctions |
| CN117000183A (en) * | 2023-09-25 | 2023-11-07 | 江苏扬阳化工设备制造有限公司 | Energy-saving and environment-friendly reaction kettle heating device |
-
2019
- 2019-05-14 CN CN201920688380.0U patent/CN210314482U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110042368A (en) * | 2019-05-14 | 2019-07-23 | 合肥本源量子计算科技有限责任公司 | A kind of device of chemical vapor deposition production graphene hetero-junctions |
| CN117000183A (en) * | 2023-09-25 | 2023-11-07 | 江苏扬阳化工设备制造有限公司 | Energy-saving and environment-friendly reaction kettle heating device |
| CN117000183B (en) * | 2023-09-25 | 2024-01-02 | 江苏扬阳化工设备制造有限公司 | Energy-saving and environment-friendly reaction kettle heating device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN210314482U (en) | Device for producing graphene heterojunction through chemical vapor deposition | |
| US8698048B2 (en) | High temperature vacuum chuck assembly | |
| EP0821404A2 (en) | Lift pin and support pin apparatus for a processing chamber | |
| JPH10335435A (en) | Chemical vapor deposition for single wafer and quartz pin lift for etching process chamber | |
| TW200807560A (en) | Substrate processing with rapid temperature gradient control | |
| US5648006A (en) | Heater for chemical vapor deposition equipment | |
| JP2004511907A (en) | A device that heats substrates quickly and uniformly with infrared light | |
| CN104364890A (en) | Workpiece carrier | |
| JP2015513796A (en) | Heating lamp having a base for facilitating a reduction in air flow around the heating lamp | |
| CN210104075U (en) | Heating device for chemical vapor deposition | |
| US4873942A (en) | Plasma enhanced chemical vapor deposition wafer holding fixture | |
| CN103074611A (en) | Substrate bearing device and metal organic chemical vapor deposition device | |
| CN107749407B (en) | Wafer bearing disc and supporting structure thereof | |
| CN103578899B (en) | Apparatus for processing plasma and electrostatic chuck thereof | |
| CN113122826B (en) | Heating device of PECVD (plasma enhanced chemical vapor deposition) equipment | |
| JPS61267317A (en) | Boat for vertical type diffusion furnace | |
| KR20020011793A (en) | wide area heating module for fabricating semiconductor device | |
| CN206806305U (en) | A kind of diffusing quartz boat | |
| CN103614709B (en) | For the combination base type electromagnetic heater of MOCVD reaction chamber | |
| KR101199972B1 (en) | Batch type plasma treatment appartus and plasma treatment method using the same | |
| CN110042368A (en) | A kind of device of chemical vapor deposition production graphene hetero-junctions | |
| CN105502276B (en) | Method for preparing test electrodes on microparticles | |
| CN212874439U (en) | Wafer high temperature treatment is with bearing device | |
| JP6233712B2 (en) | Vapor growth apparatus and supporting structure of substrate to be processed | |
| CN220468143U (en) | Coating carrier and coating equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |