CN106894002A - A kind of PECVD film formation devices and its film build method - Google Patents
A kind of PECVD film formation devices and its film build method Download PDFInfo
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- CN106894002A CN106894002A CN201710208819.0A CN201710208819A CN106894002A CN 106894002 A CN106894002 A CN 106894002A CN 201710208819 A CN201710208819 A CN 201710208819A CN 106894002 A CN106894002 A CN 106894002A
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- support
- support pin
- pin body
- heating
- temperature
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
Abstract
The invention discloses a kind of PECVD film formation devices and its film build method.The film formation device includes reaction chamber, it is arranged at the vacuum valve of the reaction chamber side, it is arranged at the support heating system of the reaction chamber bottom, it is arranged at the spray head on the reaction chamber top, control is described to support heating system upper surface to the control-rod of the spray head distance and the air inlet pipe being connected with the spray head, the support heating system includes heating pedestal, support pin and support base, the support pin includes support pin body and is arranged on the heater of support pin body interior, the support pin body includes branch support and support bar portion, the Heating body branch of the heater is in the support top interior.Heater in support pin can effectively be heated to the substrate above support pin, can effectively improve basal plate heated uniformity, reduce Pin Mura phenomenons, and then effectively improve quality of forming film.
Description
Technical field
The present invention relates to chemical vapour deposition technique field, more particularly to a kind of PECVD film formation devices and its film build method.
Background technology
Plasma enhanced chemical vapor deposition method PECVD (Plasma Enhanced Chemical Vapor
Deposition it is) to make the gas ionization containing film composed atom by microwave or radio frequency etc., being partially formed plasma,
And plasma chemistry activity is very strong, it is easy to react, desired film is gone out in deposition on substrate.In order that chemistry is anti-
Should be able at a lower temperature carry out, make use of the activity of plasma to promote reaction, thus this CVD is referred to as plasma
Enhancing chemical vapor deposition (PECVD).
In PECVD film forming procedures, heating pedestal is carried out heating reach design temperature and stabilization after, vacuum mechanical-arm
Substrate is put into reaction chamber, substrate is supported by the support pin through heating pedestal stepped hole, is subsequently heated pedestal and is risen and base
Plate is slowly contacted, and heating pedestal continues to rise, and support pin is moved downward due to Action of Gravity Field relative to heating pedestal, slow with substrate
Slow to depart from, final heating pedestal is completely attached to substrate, and support pin is completely disengaged from substrate, and support pin is due to the narrow top in lower end
Portion golf ball nail wide (golf-tee) shape, finally surface indentation inside heating pedestal, then provides environment bar thereon
Part, produces plasma to start deposition, and substrate is having support pin position and (substrate directly connects with heating pedestal without pin position is supported
Touch position) it is heated uneven, cause formed uneven (Pin Mura) phenomenon of film on substrate, influence quality of forming film.
The content of the invention
The embodiment of the present invention provides a kind of PECVD film formation devices and its film build method, can effectively improve basal plate heated equal
Even property, reduces Pin Mura phenomenons, and then improve quality of forming film.
The embodiment of the present invention uses following technical proposals：
A kind of PECVD film formation devices, including reaction chamber, are arranged at the vacuum valve of the reaction chamber side, set
In the support heating system of the reaction chamber bottom, the spray head on the reaction chamber top is arranged at, controls the support
Heating system upper surface to the control-rod of the spray head distance and the air inlet pipe being connected with the spray head, the support adds
Hot systems include heating pedestal, support pin and support base, and the support pin includes support pin body and is arranged on support
The heater of pin body interior, the support pin body includes branch support and support bar portion, the Heating body of the heater
It is arranged on the support top interior.
Preferably, the support pin body material is ceramics.
Preferably, the support heating system also includes temperature sensor, the branch support and the temperature sensor
Connection.
Preferably, the temperature sensor is arranged on support pin body interior.
Preferably, the temperature sensor is thermocouple sensor.
Preferably, the support heating system also includes over-temperature sensor, the branch support and the over-temperature sensor
Connection.
Preferably, the over-temperature sensor is arranged on support pin body interior.
Preferably, the heating pedestal includes multiple stepped holes, and each stepped hole top aperture size is more than middle part
Size, the support top outer diameter size is less than stepped hole top aperture size, and support bar portion outside dimension is less than in stepped hole
Portion's aperture size.
Preferably, the support heating system also includes the axle sleeve with roller, the aperture size in the middle part of the stepped hole
Less than top and bottom aperture size, the axle sleeve is fixed on the stepped hole bottom, and the roller is towards stepped hole center
Protrude in line direction.
Preferably, the heater is resistance heater.
A kind of PECVD film build methods, comprise the following steps：
Step 1：Heating pedestal is heated, while supporting the heater of pin body interior to utilizing to support pin body
Heated, the two setting heating-up temperature is identical；
Step 2：When heating pedestal and support pin body reach design temperature, and heating pedestal actual temperature stabilization
Afterwards, vacuum valve is opened, substrate is sent into reaction chamber, by support pin body supporting substrate, close vacuum valve；
Step 3：Control-rod rises heating pedestal, heating pedestal is contacted with substrate and reaches predetermined process station；
Step 4：Environmental condition is provided, produces plasma to start deposition.
Preferably, before substrate feeding reaction chamber, the support head temperature of pin body is supported by temperature sensor monitors,
After the heating pedestal reaches design temperature with support pin body, heater is controlled, the actual temperature of branch support is also stablized
Afterwards, then vacuum valve is opened.
Preferably, after substrate feeding reaction chamber, the support head temperature of pin body is supported by temperature sensor monitors,
Control heater, makes the actual temperature of branch support identical with design temperature or heating pedestal actual temperature.
Above-mentioned at least one technical scheme that the embodiment of the present invention is used can reach following beneficial effect：
Compared with prior art, the PECVD film formation devices that the present invention is provided, support pin in it include support pin body with
And the heater for supporting pin body interior is arranged on, therefore, while support pin body maintains support pin supporting role, in substrate
In film forming procedure, heater can effectively be heated to the substrate above support pin, and the heating-up temperature to supporting pin body sets
It is set to identical with heating pedestal, can effectively improves basal plate heated uniformity, reduces Pin Mura phenomenons, and then effectively improve into
Film quality.
Brief description of the drawings
Accompanying drawing described herein is used for providing a further understanding of the present invention, constitutes a part of the invention, this hair
Bright schematic description and description does not constitute inappropriate limitation of the present invention for explaining the present invention.In the accompanying drawings：
Fig. 1 is present pre-ferred embodiments PECVD film formation device structural representations；
Fig. 2 is that present pre-ferred embodiments PECVD film formation devices support heating system close-up schematic view；
Fig. 3 is present pre-ferred embodiments PECVD film build method flow charts；
Fig. 4 be present pre-ferred embodiments PECVD film build methods heating pedestal and substrate not in contact with when schematic diagram；
Fig. 5 is schematic diagram when present pre-ferred embodiments PECVD film build method heating pedestals are just contacted with substrate；
Fig. 6 is schematic diagram when present pre-ferred embodiments PECVD film build methods heating pedestal reaches predetermined process station.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with the specific embodiment of the invention and
Corresponding accompanying drawing is clearly and completely described to technical solution of the present invention.Obviously, described embodiment is only the present invention one
Section Example, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art are not doing
Go out the every other embodiment obtained under the premise of creative work, belong to the scope of protection of the invention.
Below in conjunction with accompanying drawing, the technical scheme that present pre-ferred embodiments are provided is described in detail.
As shown in Figure 1 and Figure 2, the embodiment of the present invention provides a kind of PECVD film formation devices, including reaction chamber 1, sets
In the vacuum valve 2 of the side of reaction chamber 1, the support heating system 3 of the bottom of reaction chamber 1 is arranged at, is arranged at reaction chamber 1
The spray head 4 on top, the control support upper surface of heating system 3 is connected to the control-rod 5 of the distance of spray head 4 and with spray head 4
Air inlet pipe 6.
Specifically, support heating system 3 includes heating pedestal 100, support pin 200, support base 300, temperature sensor
400th, over-temperature sensor 500 and axle sleeve 600.
Multiple stepped holes 110 through its upper and lower surface are provided with heating pedestal 100, the hole at each middle part of stepped hole 110
Footpath size can be moved up and down less than top and the aperture size of bottom, heating pedestal 300 by the driving of control-rod 5.
Supporting the lower end of pin 200 can be passed through heating pedestal by stepped hole 110 and be located in support base 300, branch
The upper end for supportting pin 200 can support the substrate for needing film forming positioned at the top of heating pedestal 300.Specifically, support pin 200 includes
Support pin body 210 and the heater 220 being arranged on inside support pin body 210.Further, support pin body 210 is wrapped
Branch support 211 and support bar portion 212 are included, the outside dimension of branch support 211 is more than the outside dimension of support bar portion 212, and
And more than the aperture size at the middle part of stepped hole 110, but be less than the aperture size on the top of stepped hole 110, support bar portion 212 it is outer
Aperture size of the footpath size less than the middle part of stepped hole 110.In this embodiment, support pin body 210 is cylindrical.
In the present embodiment, the resistance heater of heater 220, the Heating body of heater 220 is arranged on branch support
Inside 211, mainly branch support 211 is heated.In addition, heater 220 some be located at support bar portion 212 in
Portion, Heating body and external heat power supply (not shown) for connecting heater 220.Temperature sensor 400 and super
Temperature sensor 500 is arranged on inside support pin body 210, is connected with branch support 211, the temperature of sensing branch support 211.Axle sleeve
The bottom of 600 stepped holes 110 for being fixed on heating pedestal 100, the inner side of bearing 600, i.e., it is towards the centerline direction of stepped hole 110
Roller 610 with protrusion.
The PECVD film formation devices that the present embodiment is provided, are designed to support pin body 210 and set by by support pin 200
The composite construction of the composition of heater 220 inside support pin body 210 is put, in this way, support pin body 210 can both maintain branch
The supporting role of pin 200 is supportted, again can be in PECVD film forming procedures, heater 220 can be by support pin body 210
Heating, and then the substrate above support pin 200 is effectively heated, eliminate support pin 200 and received with without substrate at support pin 200
Hot uneven phenomenon, makes basal plate heated essentially identical.
In the present embodiment, branch support 211 is connected with temperature sensor 400, can be supervised in time by temperature sensor 400
The temperature of control branch support 211, the temperature monitored by temperature sensor 400 in coating process is adjusted heater 220, made in time
Branch support 211 is consistent with the temperature of heating pedestal 100, and then more efficient raising basal plate heated uniformity, reduces Pin
Mura phenomenons.In addition, branch support 211 is connected with over-temperature sensor 500, prevent support pin body 210 and heater 220 because
Cause to damage for heating-up temperature is too high, anti-overheat protective function is played to support pin 200.
The material of support pin body 210 is preferably ceramics, and one side ceramic material good insulation preformance insulate when being plated on substrate
During film, can prevent conducting particles from entering in film, influence quality of forming film, another aspect ceramic material hardness is high, with good branch
Support is acted on, additionally, ceramic material high temperature resistant, it is allowed to film-forming temperature higher, expands process window.
The PECVD film formation devices that the present embodiment is provided are in order that the setting of attemperating unit has more with original film formation device
Good compatibility, the temperature sensor 400 and over-temperature sensor 500 being connected with branch support 211 is arranged on support pin body
Inside 210, certain temperature sensor 400 and over-temperature sensor 500 can also be arranged on outside support pin body 210, temperature
Sensor 400 can be thermocouple sensor.
Further, since aperture size of the outside dimension of branch support 211 less than the top of stepped hole 110, outside support bar portion 212
Footpath size less than the middle part of stepped hole 110 aperture size, in this way, reduce support pin 200 during moving up and down with heating
Friction between the internal face of stepped hole 110 of pedestal 100.Axle sleeve 600 simultaneous with roller 610 is fixed on heating pedestal 100
Stepped hole 110 bottom, roller 610 can avoid support pin 200 produced during moving up and down rock and and stepped hole
The internal face contact at 110 tops and middle part.Therefore, the setting of axle sleeve 600 can avoid support pin 200 and the inwall of stepped hole 110
Rubbed between face, strengthened to the support position-limiting action of pin 200.
As shown in figure 3, the embodiment of the present invention also provides a kind of method that film forming is carried out by PECVD film formation devices, the party
Method is comprised the following steps,
Step 1：Heating pedestal 100 is heated, while to using the heater 220 pairs supported inside pin body 210
Support pin body 210 is heated, and the two setting heating-up temperature is identical.
Step 2：When heating pedestal 100 and support pin body 210 reach design temperature, and heating pedestal 100 is actual
After temperature stabilization, vacuum valve 2 is opened, substrate S is sent into reaction chamber 1, by the supporting substrate S of support pin body 210, closed true
Empty valve 2.
It should be noted that branch support 211 is connected with temperature sensor 400 and over-temperature sensor 500, substrate S send
Before entering reaction chamber 1, the sensing of temperature sensor 400 supports the temperature of branch support 211 of pin body 210, heating pedestal 100 and branch
After support pin body 210 reaches design temperature, heater 220 is controlled, after the actual temperature of branch support 211 is also stablized, then beaten
After opening the actual temperature whole stabilization of vacuum valve 2, i.e. heating pedestal 100 and branch support 211, then open vacuum valve.Tool
Body ground, after heating pedestal 100 is stable with the actual temperature whole of branch support 211, reaction chamber is evacuated to 1- by vavuum pump
10mtorr, opens vacuum valve 2, substrate S is put into reaction chamber 1 by manipulator, by the supporting substrate S of support pin body 210.
As shown in figure 4, support pin 300 lower end is against in support base 300, substrate S is supported by support pin body 210, i.e., by support pin
200 support, support pin 200 pass through heating pedestal 100, the initial position of heating pedestal 100 under substrate S, not with substrate S contact,
Manipulator exits reaction chamber 1 afterwards, closes vacuum valve 2.
Step 3：Control-rod 5 rises heating pedestal 100, makes heating pedestal 100 and substrate S contact and reaches predetermined technique position
Put.
Start rise program, heating pedestal 100 is risen by control-rod 5, heating pedestal 100 constantly rises, slow with substrate S
Slow to be close to contact, heating pedestal 100 is just contacted with substrate S, as shown in Figure 5.
Hereafter, control-rod 5 continues to rise heating pedestal 100, drives substrate S to rise, and supports pin 200 due to Action of Gravity Field,
Decline with respect to heating pedestal 100, slowly depart from substrate S.
The present embodiment rubs to reduce when support pin 200 is moved up and down with the internal face of stepped hole 110 of heating pedestal 100
Power is wiped, support support bar portion 212 diameter dimension of pin 200 is set and is less than the middle aperture size of stepped hole 110, support pin 200 is supported
The diameter dimension of top 211 is less than the top aperture size of stepped hole 110, but is greater than the middle aperture size of stepped hole 110, makes support
Internal face of the pin 200 when moving up and down not with stepped hole 110 is contacted.Meanwhile, in order that support pin 200 position stabilization, in heating
The axle sleeve 600 of the bottom fixed installation with roller 610 of the stepped hole 110 of substrate 100, the roller 610 of axle sleeve 600 both ensure that
Support pin 200 position stabilization, avoids supporting the friction of pin 200 and the internal face of stepped hole 11 again, can effectively reduce support pin 200
Abrasion, improves the life-span of support pin 200.
Finally, since 200 supports 211 of support pin fall into the top of stepped hole 110, meanwhile, support the lower end of pin 200 to take off
From support base 300, and heating pedestal 100 is reached with spray head 4 apart from a suitably predetermined process station, as shown in Figure 6.
Step 4：Environmental condition is provided, produces plasma to start deposition.
By plasma source and reacting gas by air inlet pipe 6, into spray head 4, radio frequency electrical is applied by radio-frequency power supply
Pressure, produces plasma, and the electronic impact of plasma high speed motion will make neutral anti-to neutral reactant gas molecules
Answer gas molecule become fragmentate or in activation state and react, deposit film forming.
In the film forming procedure of substrate, heating pedestal 100 is heated simultaneously with support pin body 210, the two setting
Temperature is identical to make substrate S have support pin 200 and be uniformly heated without support pin 200 position.
After substrate S feeding reaction chambers 1, the branch support 211 of support pin body 210 is monitored by temperature sensor 400
Temperature, control makes the actual temperature of 220 pairs of heating of branch support 211 of heater identical with design temperature, further regulation and control substrate S
Being heated evenly property, or, control makes 220 pairs of actual temperatures of the heating of branch support 211 of heater and the actual temperature of heating pedestal 100
Degree is identical, and the method can more accurately regulate and control substrate being heated evenly property of S.
Additionally, the present embodiment PECVD film build methods can be in the heating process of heater 220, using in support pin body 210
Internal over-temperature sensor 500 can prevent support pin body 210 and heater 220 to be caused to damage because heating-up temperature is too high.
In sum, the PECVD film formation devices that the present invention is provided, the support pin in it includes support pin body and setting
In the heater of support pin body interior, therefore, while support pin body maintains support pin supporting role, in substrate film forming mistake
Cheng Zhong, heater can to support pin above substrate effectively be heated, to support pin body heating-up temperature be arranged to
Heating pedestal is identical, can effectively improve basal plate heated uniformity, reduces Pin Mura phenomenons, and then effectively improve into film quality
Amount.
Embodiments of the invention are the foregoing is only, is not intended to limit the invention.For those skilled in the art
For, the present invention can have various modifications and variations.It is all any modifications made within spirit and principles of the present invention, equivalent
Replace, improve etc., should be included within scope of the presently claimed invention.
Claims (13)
1. a kind of PECVD film formation devices, including reaction chamber, are arranged at the vacuum valve of the reaction chamber side, are arranged at
The support heating system of the reaction chamber bottom, is arranged at the spray head on the reaction chamber top, controls the support to add
Hot systems upper surface to the control-rod of the spray head distance and the air inlet pipe being connected with the spray head, the support is heated
System includes heating pedestal, support pin and support base, it is characterised in that the support pin includes support pin body and sets
The heater in support pin body interior is put, the support pin body includes branch support and support bar portion, the heater
Heating body is arranged on the support top interior.
2. PECVD film formation devices according to claim 1, it is characterised in that the support pin body material is ceramics.
3. PECVD film formation devices according to claim 1, it is characterised in that the support heating system also includes temperature
Sensor, the branch support is connected with the temperature sensor.
4. PECVD film formation devices according to claim 3, it is characterised in that the temperature sensor is arranged on support pin
Body interior.
5. PECVD film formation devices according to claim 3, it is characterised in that the temperature sensor is thermocouple sensing
Device.
6. PECVD film formation devices according to claim 1, it is characterised in that the support heating system also includes overtemperature
Sensor, the branch support is connected with the over-temperature sensor.
7. PECVD film formation devices according to claim 6, it is characterised in that the over-temperature sensor is arranged on support pin
Body interior.
8. PECVD film formation devices according to claim 1, it is characterised in that the heating pedestal includes multiple stepped holes,
Each stepped hole top aperture size is more than middle part size, and the support top outer diameter size is less than stepped hole top aperture
Size, support bar portion outside dimension is less than stepped hole middle aperture size.
9. PECVD film formation devices according to claim 8, it is characterised in that the support heating system also includes carrying
The axle sleeve of roller, the aperture size in the middle part of the stepped hole is less than top and bottom aperture size, and the axle sleeve is fixed on institute
Stepped hole bottom is stated, the roller protrudes towards stepped hole centerline direction.
10. PECVD film formation devices according to claim 1, it is characterised in that the heater is resistance heater.
11. a kind of PECVD film build methods, it is characterised in that comprise the following steps：
Step 1：Heating pedestal is heated, while to using supporting the heater of pin body interior to carry out support pin body
Heating, the two setting heating-up temperature is identical；
Step 2：After heating pedestal and support pin body reach design temperature, and heating pedestal actual temperature stabilization, beat
Vacuum valve is opened, substrate is sent into reaction chamber, by support pin body supporting substrate, close vacuum valve；
Step 3：Control-rod rises heating pedestal, heating pedestal is contacted with substrate and reaches predetermined process station；
Step 4：Environmental condition is provided, produces plasma to start deposition.
12. PECVD film build methods according to claim 11, it is characterised in that before substrate feeding reaction chamber, by temperature
After degree Sensor monitoring supports the support head temperature of pin body, the heating pedestal to reach design temperature with support pin body,
Control heater, after the actual temperature of branch support is also stablized, then opens vacuum valve.
13. PECVD film build methods according to claim 11, it is characterised in that after substrate feeding reaction chamber, by temperature
Degree Sensor monitoring supports the support head temperature of pin body, controls heater, makes the actual temperature of branch support and setting temperature
Degree or heating pedestal actual temperature are identical.
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Cited By (5)
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| CN108203817A (en) * | 2018-01-29 | 2018-06-26 | 福州京东方光电科技有限公司 | PECVD reaction chambers and the support needle for PECVD reaction chambers |
| CN108251821A (en) * | 2018-04-13 | 2018-07-06 | 昆山国显光电有限公司 | A kind of pedestal applied to PECVD film forming |
| CN110172683A (en) * | 2019-06-27 | 2019-08-27 | 云谷（固安）科技有限公司 | Heating mechanism, plasma chamber and the method to form a film on substrate |
| CN113122826A (en) * | 2020-01-16 | 2021-07-16 | 中国电子科技集团公司第四十八研究所 | PECVD equipment heating device |
| CN114672789A (en) * | 2020-12-25 | 2022-06-28 | 中国科学院微电子研究所 | Vapor deposition equipment and wafer heating platform deck and heating method thereof |
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| CN108203817A (en) * | 2018-01-29 | 2018-06-26 | 福州京东方光电科技有限公司 | PECVD reaction chambers and the support needle for PECVD reaction chambers |
| CN108251821A (en) * | 2018-04-13 | 2018-07-06 | 昆山国显光电有限公司 | A kind of pedestal applied to PECVD film forming |
| CN110172683A (en) * | 2019-06-27 | 2019-08-27 | 云谷（固安）科技有限公司 | Heating mechanism, plasma chamber and the method to form a film on substrate |
| CN113122826A (en) * | 2020-01-16 | 2021-07-16 | 中国电子科技集团公司第四十八研究所 | PECVD equipment heating device |
| CN113122826B (en) * | 2020-01-16 | 2023-11-07 | 中国电子科技集团公司第四十八研究所 | Heating device of PECVD (plasma enhanced chemical vapor deposition) equipment |
| CN114672789A (en) * | 2020-12-25 | 2022-06-28 | 中国科学院微电子研究所 | Vapor deposition equipment and wafer heating platform deck and heating method thereof |
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