TWI361955B - - Google Patents

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Publication number
TWI361955B
TWI361955B TW96123370A TW96123370A TWI361955B TW I361955 B TWI361955 B TW I361955B TW 96123370 A TW96123370 A TW 96123370A TW 96123370 A TW96123370 A TW 96123370A TW I361955 B TWI361955 B TW I361955B
Authority
TW
Taiwan
Prior art keywords
group
film
resin composition
photosensitive resin
acid
Prior art date
Application number
TW96123370A
Other languages
English (en)
Chinese (zh)
Other versions
TW200827934A (en
Inventor
Hisanobu Harada
Sanlin Hu
Daisuke Kawana
Eric Scott Moyer
Kazufumi Sato
Isamu Takagi
Koji Yonemura
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200827934A publication Critical patent/TW200827934A/zh
Application granted granted Critical
Publication of TWI361955B publication Critical patent/TWI361955B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials For Photolithography (AREA)
TW96123370A 2006-06-28 2007-06-27 Photosensitive resin composition and method of forming pattern TW200827934A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80609006P 2006-06-28 2006-06-28

Publications (2)

Publication Number Publication Date
TW200827934A TW200827934A (en) 2008-07-01
TWI361955B true TWI361955B (enExample) 2012-04-11

Family

ID=38845546

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96123370A TW200827934A (en) 2006-06-28 2007-06-27 Photosensitive resin composition and method of forming pattern

Country Status (4)

Country Link
JP (1) JP4943428B2 (enExample)
KR (1) KR101057605B1 (enExample)
TW (1) TW200827934A (enExample)
WO (1) WO2008001782A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4890153B2 (ja) * 2006-08-11 2012-03-07 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
TW201118505A (en) * 2009-09-15 2011-06-01 Jsr Corp Upper layer film forming composition and method for forming photoresist pattern
JP2011170207A (ja) * 2010-02-19 2011-09-01 Jeol Ltd 微細構造物の製造方法
WO2017192345A1 (en) 2016-05-03 2017-11-09 Dow Corning Corporation Silsesquioxane resin and oxaamine composition
JP7537368B2 (ja) * 2020-06-18 2024-08-21 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7573030B2 (ja) * 2020-07-01 2024-10-24 東京応化工業株式会社 化学増幅型感光性組成物、感光性ドライフィルム、めっき用鋳型付き基板の製造方法、及びめっき造形物の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0829987A (ja) * 1994-07-19 1996-02-02 Nippon Telegr & Teleph Corp <Ntt> ポジ型シリコーンレジスト材料
JP3120402B2 (ja) * 1998-09-03 2000-12-25 インターナショナル・ビジネス・マシーンズ・コーポレ−ション 不活性化芳香族アミン化合物を含むフォトレジスト組成物
JP4187879B2 (ja) * 1999-08-06 2008-11-26 東京応化工業株式会社 感放射線レジスト組成物
JP2002311591A (ja) * 2001-04-18 2002-10-23 Clariant (Japan) Kk 層間絶縁膜の形成に用いられる感光性組成物
US20060003252A1 (en) * 2002-12-02 2006-01-05 Taku Hirayama Chemical amplification type silicone based positive photoresist composition
US7625687B2 (en) * 2003-07-03 2009-12-01 Dow Corning Corporation Silsesquioxane resin
US6939664B2 (en) * 2003-10-24 2005-09-06 International Business Machines Corporation Low-activation energy silicon-containing resist system
US20050106494A1 (en) * 2003-11-19 2005-05-19 International Business Machines Corporation Silicon-containing resist systems with cyclic ketal protecting groups
JP2006106311A (ja) * 2004-10-05 2006-04-20 Shin Etsu Chem Co Ltd ケイ素含有レジスト組成物並びにこれを用いたパターン形成方法
JP2007133185A (ja) * 2005-11-10 2007-05-31 Tokyo Ohka Kogyo Co Ltd 感光性樹脂組成物及びパターン形成方法
JP2007133266A (ja) * 2005-11-11 2007-05-31 Tokyo Ohka Kogyo Co Ltd 感光性樹脂組成物及びパターン形成方法

Also Published As

Publication number Publication date
JPWO2008001782A1 (ja) 2009-11-26
JP4943428B2 (ja) 2012-05-30
KR20090007636A (ko) 2009-01-19
KR101057605B1 (ko) 2011-08-18
WO2008001782A1 (fr) 2008-01-03
TW200827934A (en) 2008-07-01

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