TWI358449B - Iodate-containing chemical-mechanical polishing co - Google Patents
Iodate-containing chemical-mechanical polishing co Download PDFInfo
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- TWI358449B TWI358449B TW096108584A TW96108584A TWI358449B TW I358449 B TWI358449 B TW I358449B TW 096108584 A TW096108584 A TW 096108584A TW 96108584 A TW96108584 A TW 96108584A TW I358449 B TWI358449 B TW I358449B
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- Prior art keywords
- weight
- polishing composition
- polishing
- abrasive
- substrate
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- 238000005498 polishing Methods 0.000 title claims description 201
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 title claims description 20
- 239000000203 mixture Substances 0.000 claims description 163
- 239000000758 substrate Substances 0.000 claims description 61
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 40
- -1 nitrogen-containing compound Chemical class 0.000 claims description 40
- 229910052802 copper Inorganic materials 0.000 claims description 39
- 239000010949 copper Substances 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 31
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 30
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 20
- 239000007788 liquid Substances 0.000 claims description 20
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 20
- 239000000126 substance Substances 0.000 claims description 16
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- 239000002184 metal Substances 0.000 claims description 13
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 12
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229940005633 iodate ion Drugs 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 6
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- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 210000002105 tongue Anatomy 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/387,558 US8551202B2 (en) | 2006-03-23 | 2006-03-23 | Iodate-containing chemical-mechanical polishing compositions and methods |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200801166A TW200801166A (en) | 2008-01-01 |
| TWI358449B true TWI358449B (en) | 2012-02-21 |
Family
ID=38269104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096108584A TWI358449B (en) | 2006-03-23 | 2007-03-13 | Iodate-containing chemical-mechanical polishing co |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US8551202B2 (enExample) |
| EP (1) | EP1996663A2 (enExample) |
| JP (1) | JP5576112B2 (enExample) |
| KR (1) | KR101372208B1 (enExample) |
| CN (1) | CN101389723B (enExample) |
| IL (1) | IL192551A (enExample) |
| MY (1) | MY150410A (enExample) |
| SG (1) | SG170755A1 (enExample) |
| TW (1) | TWI358449B (enExample) |
| WO (1) | WO2007111813A2 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005120775A1 (en) * | 2004-06-08 | 2005-12-22 | S.O.I. Tec Silicon On Insulator Technologies | Planarization of a heteroepitaxial layer |
| KR20100031730A (ko) * | 2007-06-08 | 2010-03-24 | 니타 하스 인코포레이티드 | 연마용 조성물 |
| US7922926B2 (en) * | 2008-01-08 | 2011-04-12 | Cabot Microelectronics Corporation | Composition and method for polishing nickel-phosphorous-coated aluminum hard disks |
| CN101906270A (zh) * | 2009-06-08 | 2010-12-08 | 安集微电子科技(上海)有限公司 | 一种化学机械抛光液 |
| JP5141792B2 (ja) | 2010-06-29 | 2013-02-13 | 日立化成工業株式会社 | Ｃｍｐ研磨液及び研磨方法 |
| CN102268225B (zh) * | 2011-05-30 | 2014-03-26 | 上海百兰朵电子科技有限公司 | 永悬浮钻石研磨液 |
| US9039914B2 (en) | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
| CN103265893B (zh) * | 2013-06-04 | 2015-12-09 | 复旦大学 | 一种基于金属Mo的抛光工艺的抛光液、其制备方法及应用 |
| WO2015037311A1 (ja) * | 2013-09-10 | 2015-03-19 | 日立化成株式会社 | スラリー、研磨液セット、研磨液、基体の研磨方法及び基体 |
| CN107491110B (zh) * | 2017-09-20 | 2019-12-13 | 山东大学 | pH稳定且具有酸碱缓冲的氧化铝分散液及其制备方法 |
| TWI761921B (zh) * | 2019-10-30 | 2022-04-21 | 南韓商Ｓｋｃ索密思股份有限公司 | 研磨墊、製造該研磨墊之方法及使用該研磨墊以製造半導體裝置之方法 |
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| US5230833A (en) | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
| US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
| US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
| JP3270282B2 (ja) | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
| JP3313505B2 (ja) | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
| US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
| US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
| US5872633A (en) | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
| TW512170B (en) | 1998-07-24 | 2002-12-01 | Ibm | Aqueous slurry composition and method for polishing a surface using the same |
| US6375693B1 (en) | 1999-05-07 | 2002-04-23 | International Business Machines Corporation | Chemical-mechanical planarization of barriers or liners for copper metallurgy |
| JP2001139937A (ja) * | 1999-11-11 | 2001-05-22 | Hitachi Chem Co Ltd | 金属用研磨液及び研磨方法 |
| US6355075B1 (en) | 2000-02-11 | 2002-03-12 | Fujimi Incorporated | Polishing composition |
| JP2001269859A (ja) * | 2000-03-27 | 2001-10-02 | Jsr Corp | 化学機械研磨用水系分散体 |
| US6364920B1 (en) | 2000-04-21 | 2002-04-02 | Saint-Gobain Ceramics & Plastics, Inc. | CMP formulations |
| US6409781B1 (en) | 2000-05-01 | 2002-06-25 | Advanced Technology Materials, Inc. | Polishing slurries for copper and associated materials |
| US6599173B1 (en) | 2000-06-30 | 2003-07-29 | International Business Machines Corporation | Method to prevent leaving residual metal in CMP process of metal interconnect |
| US6468137B1 (en) | 2000-09-07 | 2002-10-22 | Cabot Microelectronics Corporation | Method for polishing a memory or rigid disk with an oxidized halide-containing polishing system |
| US20020173243A1 (en) * | 2001-04-05 | 2002-11-21 | Costas Wesley D. | Polishing composition having organic polymer particles |
| US7279119B2 (en) | 2001-06-14 | 2007-10-09 | Ppg Industries Ohio, Inc. | Silica and silica-based slurry |
| US6589100B2 (en) * | 2001-09-24 | 2003-07-08 | Cabot Microelectronics Corporation | Rare earth salt/oxidizer-based CMP method |
| US6821897B2 (en) * | 2001-12-05 | 2004-11-23 | Cabot Microelectronics Corporation | Method for copper CMP using polymeric complexing agents |
| US7316603B2 (en) | 2002-01-22 | 2008-01-08 | Cabot Microelectronics Corporation | Compositions and methods for tantalum CMP |
| US20030139047A1 (en) | 2002-01-24 | 2003-07-24 | Thomas Terence M. | Metal polishing slurry having a static etch inhibitor and method of formulation |
| US6821309B2 (en) | 2002-02-22 | 2004-11-23 | University Of Florida | Chemical-mechanical polishing slurry for polishing of copper or silver films |
| US20040077295A1 (en) * | 2002-08-05 | 2004-04-22 | Hellring Stuart D. | Process for reducing dishing and erosion during chemical mechanical planarization |
| US6911393B2 (en) * | 2002-12-02 | 2005-06-28 | Arkema Inc. | Composition and method for copper chemical mechanical planarization |
| JP2004311565A (ja) * | 2003-04-03 | 2004-11-04 | Hitachi Chem Co Ltd | 金属用研磨液及び研磨方法 |
| US7736405B2 (en) * | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
| US20050090104A1 (en) * | 2003-10-27 | 2005-04-28 | Kai Yang | Slurry compositions for chemical mechanical polishing of copper and barrier films |
| TWI244498B (en) * | 2003-11-20 | 2005-12-01 | Eternal Chemical Co Ltd | Chemical mechanical abrasive slurry and method of using the same |
| JP4644434B2 (ja) * | 2004-03-24 | 2011-03-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| WO2006133249A2 (en) | 2005-06-06 | 2006-12-14 | Advanced Technology Materials, Inc. | Integrated chemical mechanical polishing composition and process for single platen processing |
| JP2007103485A (ja) * | 2005-09-30 | 2007-04-19 | Fujifilm Corp | 研磨方法及びそれに用いる研磨液 |
-
2006
- 2006-03-23 US US11/387,558 patent/US8551202B2/en not_active Expired - Fee Related
-
2007
- 2007-03-06 MY MYPI20083710 patent/MY150410A/en unknown
- 2007-03-06 CN CN2007800066859A patent/CN101389723B/zh not_active Expired - Fee Related
- 2007-03-06 SG SG201102048-4A patent/SG170755A1/en unknown
- 2007-03-06 EP EP07752423A patent/EP1996663A2/en not_active Withdrawn
- 2007-03-06 KR KR1020087025805A patent/KR101372208B1/ko not_active Expired - Fee Related
- 2007-03-06 WO PCT/US2007/005722 patent/WO2007111813A2/en not_active Ceased
- 2007-03-06 JP JP2009501436A patent/JP5576112B2/ja not_active Expired - Fee Related
- 2007-03-13 TW TW096108584A patent/TWI358449B/zh not_active IP Right Cessation
-
2008
- 2008-07-01 IL IL192551A patent/IL192551A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR101372208B1 (ko) | 2014-03-07 |
| JP5576112B2 (ja) | 2014-08-20 |
| CN101389723A (zh) | 2009-03-18 |
| WO2007111813A2 (en) | 2007-10-04 |
| IL192551A0 (en) | 2009-02-11 |
| KR20080108561A (ko) | 2008-12-15 |
| CN101389723B (zh) | 2012-05-30 |
| SG170755A1 (en) | 2011-05-30 |
| US8551202B2 (en) | 2013-10-08 |
| IL192551A (en) | 2013-03-24 |
| MY150410A (en) | 2014-01-15 |
| JP2009530849A (ja) | 2009-08-27 |
| US20070224919A1 (en) | 2007-09-27 |
| EP1996663A2 (en) | 2008-12-03 |
| TW200801166A (en) | 2008-01-01 |
| WO2007111813A3 (en) | 2008-03-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |