JP5576112B2 - ヨウ素酸塩を含有する化学機械研磨用組成物及び化学機械研磨方法 - Google Patents

ヨウ素酸塩を含有する化学機械研磨用組成物及び化学機械研磨方法 Download PDF

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Publication number
JP5576112B2
JP5576112B2 JP2009501436A JP2009501436A JP5576112B2 JP 5576112 B2 JP5576112 B2 JP 5576112B2 JP 2009501436 A JP2009501436 A JP 2009501436A JP 2009501436 A JP2009501436 A JP 2009501436A JP 5576112 B2 JP5576112 B2 JP 5576112B2
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Japan
Prior art keywords
polishing composition
polishing
substrate
chemical mechanical
tantalum
Prior art date
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JP2009501436A
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Japanese (ja)
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JP2009530849A (ja
JP2009530849A5 (enExample
Inventor
リ，ショウティエン
カーター，フィリップ
ツァン，イェン
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CMC Materials LLC
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Cabot Microelectronics Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2009501436A 2006-03-23 2007-03-06 ヨウ素酸塩を含有する化学機械研磨用組成物及び化学機械研磨方法 Expired - Fee Related JP5576112B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/387,558 2006-03-23
US11/387,558 US8551202B2 (en) 2006-03-23 2006-03-23 Iodate-containing chemical-mechanical polishing compositions and methods
PCT/US2007/005722 WO2007111813A2 (en) 2006-03-23 2007-03-06 Iodate-containing chemical-mechanical polishing compositions and methods

Publications (3)

Publication Number Publication Date
JP2009530849A JP2009530849A (ja) 2009-08-27
JP2009530849A5 JP2009530849A5 (enExample) 2010-04-22
JP5576112B2 true JP5576112B2 (ja) 2014-08-20

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Family Applications (1)

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JP2009501436A Expired - Fee Related JP5576112B2 (ja) 2006-03-23 2007-03-06 ヨウ素酸塩を含有する化学機械研磨用組成物及び化学機械研磨方法

Country Status (10)

Country Link
US (1) US8551202B2 (enExample)
EP (1) EP1996663A2 (enExample)
JP (1) JP5576112B2 (enExample)
KR (1) KR101372208B1 (enExample)
CN (1) CN101389723B (enExample)
IL (1) IL192551A (enExample)
MY (1) MY150410A (enExample)
SG (1) SG170755A1 (enExample)
TW (1) TWI358449B (enExample)
WO (1) WO2007111813A2 (enExample)

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KR20100031730A (ko) * 2007-06-08 2010-03-24 니타 하스 인코포레이티드 연마용 조성물
US7922926B2 (en) * 2008-01-08 2011-04-12 Cabot Microelectronics Corporation Composition and method for polishing nickel-phosphorous-coated aluminum hard disks
CN101906270A (zh) * 2009-06-08 2010-12-08 安集微电子科技(上海)有限公司 一种化学机械抛光液
JP5141792B2 (ja) 2010-06-29 2013-02-13 日立化成工業株式会社 Ｃｍｐ研磨液及び研磨方法
CN102268225B (zh) * 2011-05-30 2014-03-26 上海百兰朵电子科技有限公司 永悬浮钻石研磨液
US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
CN103265893B (zh) * 2013-06-04 2015-12-09 复旦大学 一种基于金属Mo的抛光工艺的抛光液、其制备方法及应用
WO2015037311A1 (ja) * 2013-09-10 2015-03-19 日立化成株式会社 スラリー、研磨液セット、研磨液、基体の研磨方法及び基体
CN107491110B (zh) * 2017-09-20 2019-12-13 山东大学 pH稳定且具有酸碱缓冲的氧化铝分散液及其制备方法
TWI761921B (zh) * 2019-10-30 2022-04-21 南韓商Ｓｋｃ索密思股份有限公司 研磨墊、製造該研磨墊之方法及使用該研磨墊以製造半導體裝置之方法

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US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
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US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
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Also Published As

Publication number Publication date
KR101372208B1 (ko) 2014-03-07
CN101389723A (zh) 2009-03-18
WO2007111813A2 (en) 2007-10-04
IL192551A0 (en) 2009-02-11
KR20080108561A (ko) 2008-12-15
TWI358449B (en) 2012-02-21
CN101389723B (zh) 2012-05-30
SG170755A1 (en) 2011-05-30
US8551202B2 (en) 2013-10-08
IL192551A (en) 2013-03-24
MY150410A (en) 2014-01-15
JP2009530849A (ja) 2009-08-27
US20070224919A1 (en) 2007-09-27
EP1996663A2 (en) 2008-12-03
TW200801166A (en) 2008-01-01
WO2007111813A3 (en) 2008-03-13

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