TWI355688B - Post-etch treatment system for removing residue on - Google Patents

Post-etch treatment system for removing residue on Download PDF

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Publication number
TWI355688B
TWI355688B TW096110399A TW96110399A TWI355688B TW I355688 B TWI355688 B TW I355688B TW 096110399 A TW096110399 A TW 096110399A TW 96110399 A TW96110399 A TW 96110399A TW I355688 B TWI355688 B TW I355688B
Authority
TW
Taiwan
Prior art keywords
processing
substrate
gas
free radical
processing system
Prior art date
Application number
TW096110399A
Other languages
English (en)
Chinese (zh)
Other versions
TW200746289A (en
Inventor
Yuji Tsukamoto
Thomas Hamelin
Yasuhisa Kudo
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200746289A publication Critical patent/TW200746289A/zh
Application granted granted Critical
Publication of TWI355688B publication Critical patent/TWI355688B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
TW096110399A 2006-03-28 2007-03-26 Post-etch treatment system for removing residue on TWI355688B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/390,199 US8057633B2 (en) 2006-03-28 2006-03-28 Post-etch treatment system for removing residue on a substrate

Publications (2)

Publication Number Publication Date
TW200746289A TW200746289A (en) 2007-12-16
TWI355688B true TWI355688B (en) 2012-01-01

Family

ID=38573893

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096110399A TWI355688B (en) 2006-03-28 2007-03-26 Post-etch treatment system for removing residue on

Country Status (6)

Country Link
US (1) US8057633B2 (https=)
JP (1) JP5148592B2 (https=)
KR (1) KR101313426B1 (https=)
CN (1) CN101410941B (https=)
TW (1) TWI355688B (https=)
WO (1) WO2007126468A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3025125B2 (ja) 1993-03-11 2000-03-27 キヤノン株式会社 打抜剥離方法および打抜剥離装置
US8715455B2 (en) * 2007-02-06 2014-05-06 Tokyo Electron Limited Multi-zone gas distribution system for a treatment system
US20100130017A1 (en) * 2008-11-21 2010-05-27 Axcelis Technologies, Inc. Front end of line plasma mediated ashing processes and apparatus
US20120024314A1 (en) * 2010-07-27 2012-02-02 Axcelis Technologies, Inc. Plasma mediated ashing processes
US20110226280A1 (en) * 2008-11-21 2011-09-22 Axcelis Technologies, Inc. Plasma mediated ashing processes
CN102201336B (zh) * 2010-03-26 2013-03-06 中芯国际集成电路制造(上海)有限公司 半导体器件层上的氧化层刻蚀后残留物的去除方法
EP2553143B1 (en) * 2010-03-29 2017-10-04 Koolerheadz Modular gas injection device
US20120211029A1 (en) * 2011-02-22 2012-08-23 Pandit Viraj S Load lock assembly and method for particle reduction
US8999610B2 (en) * 2012-12-31 2015-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography mask repairing process
US9726940B2 (en) * 2013-12-26 2017-08-08 Sharp Kabushiki Kaisha Active matrix substrate manufacturing method, display apparatus manufacturing method, and display apparatus
US10192717B2 (en) * 2014-07-21 2019-01-29 Applied Materials, Inc. Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates
US10790181B2 (en) * 2015-08-14 2020-09-29 M Cubed Technologies, Inc. Wafer chuck featuring reduced friction support surface
KR102641441B1 (ko) 2016-09-28 2024-02-29 삼성전자주식회사 링 어셈블리 및 이를 포함하는 척 어셈블리
KR102806341B1 (ko) 2017-01-04 2025-05-12 삼성전자주식회사 포커스 링 및 이를 포함하는 플라즈마 처리 장치
US10766057B2 (en) 2017-12-28 2020-09-08 Micron Technology, Inc. Components and systems for cleaning a tool for forming a semiconductor device, and related methods
US11094511B2 (en) * 2018-11-13 2021-08-17 Applied Materials, Inc. Processing chamber with substrate edge enhancement processing
CN110502049B (zh) * 2019-08-30 2021-05-07 北京北方华创微电子装备有限公司 卡盘温度控制方法、卡盘温度控制系统及半导体设备
KR102845724B1 (ko) * 2019-10-21 2025-08-13 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
US11710777B2 (en) * 2020-10-27 2023-07-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for manufacture
KR102949847B1 (ko) * 2021-04-29 2026-04-07 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템 및 반응기 시스템을 세정하기 위한 방법

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58170536A (ja) * 1982-03-31 1983-10-07 Fujitsu Ltd プラズマ処理方法及びその装置
JPH04236425A (ja) * 1991-01-21 1992-08-25 Toshiba Corp プラズマ処理装置
JPH05184977A (ja) * 1992-01-09 1993-07-27 Toshiba Corp シャワーノズル
JPH0824117B2 (ja) * 1992-10-27 1996-03-06 東京エレクトロン株式会社 プラズマ処理方法
JPH07130828A (ja) * 1993-10-28 1995-05-19 Sony Corp 半導体製造装置
EP0692156A1 (en) * 1994-01-31 1996-01-17 Applied Materials, Inc. Electrostatic chuck with conformal insulator film
US5556476A (en) * 1994-02-23 1996-09-17 Applied Materials, Inc. Controlling edge deposition on semiconductor substrates
JP3121524B2 (ja) * 1995-06-07 2001-01-09 東京エレクトロン株式会社 エッチング装置
TW286414B (en) * 1995-07-10 1996-09-21 Watkins Johnson Co Electrostatic chuck assembly
JP3434947B2 (ja) * 1995-11-02 2003-08-11 株式会社アルバック シャワープレート
US5881208A (en) * 1995-12-20 1999-03-09 Sematech, Inc. Heater and temperature sensor array for rapid thermal processing thermal core
JPH1056054A (ja) * 1996-08-09 1998-02-24 Fujitsu Ltd ヒータ付き基板載置台、成膜装置及びエッチング装置
US6529362B2 (en) * 1997-03-06 2003-03-04 Applied Materials Inc. Monocrystalline ceramic electrostatic chuck
US6063202A (en) * 1997-09-26 2000-05-16 Novellus Systems, Inc. Apparatus for backside and edge exclusion of polymer film during chemical vapor deposition
US6073576A (en) * 1997-11-25 2000-06-13 Cvc Products, Inc. Substrate edge seal and clamp for low-pressure processing equipment
US5880924A (en) * 1997-12-01 1999-03-09 Applied Materials, Inc. Electrostatic chuck capable of rapidly dechucking a substrate
KR100249391B1 (ko) * 1997-12-30 2000-03-15 김영환 가열장치
US6179924B1 (en) * 1998-04-28 2001-01-30 Applied Materials, Inc. Heater for use in substrate processing apparatus to deposit tungsten
US6086362A (en) * 1998-05-20 2000-07-11 Applied Komatsu Technology, Inc. Multi-function chamber for a substrate processing system
US6211092B1 (en) * 1998-07-09 2001-04-03 Applied Materials, Inc. Counterbore dielectric plasma etch process particularly useful for dual damascene
JP2001237222A (ja) * 2000-02-22 2001-08-31 Shibaura Mechatronics Corp 真空処理装置
JP4697833B2 (ja) * 2000-06-14 2011-06-08 キヤノンアネルバ株式会社 静電吸着機構及び表面処理装置
US6899804B2 (en) * 2001-04-10 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
JP2002305180A (ja) * 2001-04-06 2002-10-18 Seiko Epson Corp プラズマ処理装置
JP2003197615A (ja) * 2001-12-26 2003-07-11 Tokyo Electron Ltd プラズマ処理装置およびそのクリーニング方法
JP2003318155A (ja) * 2002-04-12 2003-11-07 Applied Materials Inc ガス導入装置及びその生産方法、並びに、アッシング装置及びその運転方法
US20040025791A1 (en) * 2002-08-09 2004-02-12 Applied Materials, Inc. Etch chamber with dual frequency biasing sources and a single frequency plasma generating source
CN100464927C (zh) * 2003-03-28 2009-03-04 东京毅力科创株式会社 用于衬底的温度控制的方法和系统
US6843711B1 (en) * 2003-12-11 2005-01-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc Chemical mechanical polishing pad having a process-dependent groove configuration
US7358192B2 (en) * 2004-04-08 2008-04-15 Applied Materials, Inc. Method and apparatus for in-situ film stack processing
US7381291B2 (en) * 2004-07-29 2008-06-03 Asm Japan K.K. Dual-chamber plasma processing apparatus
US7429718B2 (en) * 2005-08-02 2008-09-30 Applied Materials, Inc. Heating and cooling of substrate support
US8034176B2 (en) * 2006-03-28 2011-10-11 Tokyo Electron Limited Gas distribution system for a post-etch treatment system
US7759249B2 (en) * 2006-03-28 2010-07-20 Tokyo Electron Limited Method of removing residue from a substrate

Also Published As

Publication number Publication date
KR101313426B1 (ko) 2013-10-02
JP5148592B2 (ja) 2013-02-20
CN101410941A (zh) 2009-04-15
JP2009531858A (ja) 2009-09-03
US8057633B2 (en) 2011-11-15
US20070235138A1 (en) 2007-10-11
TW200746289A (en) 2007-12-16
KR20080109888A (ko) 2008-12-17
WO2007126468A1 (en) 2007-11-08
CN101410941B (zh) 2012-01-11

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