TWI346719B - Lithium niobate substrate and method of producing the same - Google Patents
Lithium niobate substrate and method of producing the sameInfo
- Publication number
- TWI346719B TWI346719B TW093133568A TW93133568A TWI346719B TW I346719 B TWI346719 B TW I346719B TW 093133568 A TW093133568 A TW 093133568A TW 93133568 A TW93133568 A TW 93133568A TW I346719 B TWI346719 B TW I346719B
- Authority
- TW
- Taiwan
- Prior art keywords
- producing
- same
- lithium niobate
- niobate substrate
- substrate
- Prior art date
Links
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003394575 | 2003-11-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200519241A TW200519241A (en) | 2005-06-16 |
TWI346719B true TWI346719B (en) | 2011-08-11 |
Family
ID=34587583
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093133568A TWI346719B (en) | 2003-11-25 | 2004-11-04 | Lithium niobate substrate and method of producing the same |
Country Status (5)
Country | Link |
---|---|
US (1) | US7309392B2 (zh) |
KR (1) | KR101144258B1 (zh) |
CN (1) | CN1332077C (zh) |
DE (1) | DE102004056741B4 (zh) |
TW (1) | TWI346719B (zh) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005289776A (ja) * | 2004-04-05 | 2005-10-20 | Canon Inc | 結晶製造方法および結晶製造装置 |
US7153487B2 (en) * | 2004-05-25 | 2006-12-26 | Crystal Technology, Inc. | Using condensed chemicals to precondition lithium niobate and lithium tantalate crystals |
US7728697B2 (en) * | 2006-09-26 | 2010-06-01 | Mg Materials Corporation | Systems and methods for electrically reducing ferroelectric materials to increase bulk conductivity |
WO2008092097A2 (en) * | 2007-01-26 | 2008-07-31 | Shasta Crystals, Inc. | Multi-beam optical afterheater for laser heated pedstal growth |
JP2013010656A (ja) * | 2011-06-28 | 2013-01-17 | Chichibu Fuji Co Ltd | 単一分極化されたニオブ酸リチウム単結晶の製造方法 |
JP6477282B2 (ja) * | 2015-06-18 | 2019-03-06 | 住友金属鉱山株式会社 | ニオブ酸リチウム単結晶基板とその製造方法 |
JP6721948B2 (ja) * | 2015-06-18 | 2020-07-15 | 住友金属鉱山株式会社 | ニオブ酸リチウム単結晶基板とその製造方法 |
JP6507877B2 (ja) | 2015-06-18 | 2019-05-08 | 住友金属鉱山株式会社 | ニオブ酸リチウム単結晶基板とその製造方法 |
EP3312315A4 (en) * | 2015-06-18 | 2018-12-05 | Sumitomo Metal Mining Co., Ltd. | Lithium niobate single crystal substrate and method for producing same |
JP6493151B2 (ja) | 2015-10-23 | 2019-04-03 | 住友金属鉱山株式会社 | ニオブ酸リチウム単結晶基板の製造方法 |
CN105463581B (zh) * | 2015-11-30 | 2018-02-13 | 上海召业申凯电子材料有限公司 | 钽酸锂晶体基片的黑化处理方法 |
JP6169759B1 (ja) * | 2016-07-11 | 2017-07-26 | 株式会社山寿セラミックス | 弾性表面波素子用基板及びその製造方法 |
CN106048735B (zh) * | 2016-08-12 | 2018-08-17 | 天通控股股份有限公司 | 一种钽酸锂或铌酸锂晶体基片黑化方法 |
CN106283196A (zh) * | 2016-08-16 | 2017-01-04 | 上海召业申凯电子材料有限公司 | 高导电性钽酸锂晶体基片的黑化处理方法 |
CN109983537A (zh) | 2016-12-01 | 2019-07-05 | 艾利丹尼森零售信息服务公司 | 印刷电子装置的功能性衬底 |
US11424730B2 (en) | 2016-12-26 | 2022-08-23 | Fujian Jing'an Optoelectronics Co., Ltd. | Method for processing a lithium tantalate crystal substrate |
CN106521633B (zh) * | 2016-12-26 | 2019-12-13 | 福建晶安光电有限公司 | 一种钽酸锂晶体基片的黑化处理方法 |
CN107740190A (zh) * | 2017-09-30 | 2018-02-27 | 中电科技德清华莹电子有限公司 | 一种黑化钽酸锂晶片的处理方法 |
CN107620124A (zh) * | 2017-09-30 | 2018-01-23 | 中电科技德清华莹电子有限公司 | 一种钽酸锂晶片的黑化处理方法 |
CN107675261A (zh) * | 2017-09-30 | 2018-02-09 | 中电科技德清华莹电子有限公司 | 一种铌酸锂晶片的黑化处理方法 |
CN107604443A (zh) * | 2017-09-30 | 2018-01-19 | 中电科技德清华莹电子有限公司 | 一种黑化铌酸锂晶片的处理方法 |
CN110129891A (zh) * | 2018-02-02 | 2019-08-16 | 福建晶安光电有限公司 | 一种晶片的黑化方法及黑化后晶片 |
JP6999498B2 (ja) * | 2018-05-31 | 2022-01-18 | 京セラ株式会社 | 結晶の製造方法および導電率の制御方法 |
CN110835781B (zh) * | 2018-08-16 | 2021-08-31 | 江南石墨烯研究院 | 一种铌酸锂或钽酸锂晶片的黑化方法 |
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US4565598A (en) * | 1982-01-04 | 1986-01-21 | The Commonwealth Of Australia | Method and apparatus for controlling diameter in Czochralski crystal growth by measuring crystal weight and crystal-melt interface temperature |
JPH0637350B2 (ja) * | 1987-02-27 | 1994-05-18 | 日立金属株式会社 | 単分域タンタル酸リチウム単結晶の製造方法 |
JPH05105592A (ja) * | 1991-10-22 | 1993-04-27 | Hitachi Metals Ltd | ニオブ酸リチウム単結晶および光素子 |
JPH0637350A (ja) * | 1992-07-15 | 1994-02-10 | Nippon Telegr & Teleph Corp <Ntt> | 光信号受信器 |
EP0620458A4 (en) * | 1992-09-07 | 1995-02-01 | Nippon Kogaku Kk | OPTICAL WAVEGUIDE AND OPTICAL INSTRUMENT USING THE SAME. |
JP2843226B2 (ja) * | 1993-02-22 | 1999-01-06 | 日本碍子株式会社 | 熱処理容器および単結晶の製造装置 |
US6319430B1 (en) * | 1997-07-25 | 2001-11-20 | Crystal Technology, Inc. | Preconditioned crystals of lithium niobate and lithium tantalate and method of preparing the same |
EP0893515B1 (en) | 1997-07-25 | 2003-11-26 | Crystal Technology, Inc. | Preconditioned crystals of lithium niobate and lithium tantalate and methods of preparing the same |
JPH11236298A (ja) | 1997-12-05 | 1999-08-31 | Crystal Technol Inc | フォトリソグラフィー法に使用するための結晶および電磁線吸収能を増大させるための該結晶の前状態調節法 |
US6932957B2 (en) | 2002-06-28 | 2005-08-23 | Silicon Light Machines Corporation | Method and apparatus for increasing bulk conductivity of a ferroelectric material |
KR100496526B1 (ko) | 2002-09-25 | 2005-06-22 | 일진디스플레이(주) | 표면 탄성파 소자용 탄탈산 리튬 단결정 기판의 제조방법 |
KR100496527B1 (ko) | 2002-09-25 | 2005-06-22 | 일진디스플레이(주) | 표면 탄성파 소자용 탄탈산 리튬 단결정 기판의 제조방법 |
CN1428464A (zh) * | 2002-12-20 | 2003-07-09 | 中国科学院上海光学精密机械研究所 | 化学计量比铌酸锂单晶的制备方法 |
JP2004269300A (ja) | 2003-03-06 | 2004-09-30 | Shin Etsu Chem Co Ltd | タンタル酸リチウム結晶の製造方法 |
-
2004
- 2004-11-04 US US10/980,829 patent/US7309392B2/en active Active
- 2004-11-04 TW TW093133568A patent/TWI346719B/zh active
- 2004-11-18 KR KR1020040094481A patent/KR101144258B1/ko active IP Right Grant
- 2004-11-23 CN CNB200410095073XA patent/CN1332077C/zh active Active
- 2004-11-24 DE DE102004056741.7A patent/DE102004056741B4/de active Active
Also Published As
Publication number | Publication date |
---|---|
US7309392B2 (en) | 2007-12-18 |
CN1621578A (zh) | 2005-06-01 |
DE102004056741B4 (de) | 2015-05-21 |
US20050145165A1 (en) | 2005-07-07 |
KR20050050539A (ko) | 2005-05-31 |
KR101144258B1 (ko) | 2012-05-10 |
CN1332077C (zh) | 2007-08-15 |
TW200519241A (en) | 2005-06-16 |
DE102004056741A1 (de) | 2005-06-16 |
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