TWI346719B - Lithium niobate substrate and method of producing the same - Google Patents

Lithium niobate substrate and method of producing the same

Info

Publication number
TWI346719B
TWI346719B TW093133568A TW93133568A TWI346719B TW I346719 B TWI346719 B TW I346719B TW 093133568 A TW093133568 A TW 093133568A TW 93133568 A TW93133568 A TW 93133568A TW I346719 B TWI346719 B TW I346719B
Authority
TW
Taiwan
Prior art keywords
producing
same
lithium niobate
niobate substrate
substrate
Prior art date
Application number
TW093133568A
Other languages
English (en)
Other versions
TW200519241A (en
Inventor
Tomio Kajigaya
Takashi Kakuta
Original Assignee
Sumitomo Metal Mining Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co filed Critical Sumitomo Metal Mining Co
Publication of TW200519241A publication Critical patent/TW200519241A/zh
Application granted granted Critical
Publication of TWI346719B publication Critical patent/TWI346719B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
TW093133568A 2003-11-25 2004-11-04 Lithium niobate substrate and method of producing the same TWI346719B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003394575 2003-11-25

Publications (2)

Publication Number Publication Date
TW200519241A TW200519241A (en) 2005-06-16
TWI346719B true TWI346719B (en) 2011-08-11

Family

ID=34587583

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093133568A TWI346719B (en) 2003-11-25 2004-11-04 Lithium niobate substrate and method of producing the same

Country Status (5)

Country Link
US (1) US7309392B2 (zh)
KR (1) KR101144258B1 (zh)
CN (1) CN1332077C (zh)
DE (1) DE102004056741B4 (zh)
TW (1) TWI346719B (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005289776A (ja) * 2004-04-05 2005-10-20 Canon Inc 結晶製造方法および結晶製造装置
US7153487B2 (en) * 2004-05-25 2006-12-26 Crystal Technology, Inc. Using condensed chemicals to precondition lithium niobate and lithium tantalate crystals
US7728697B2 (en) * 2006-09-26 2010-06-01 Mg Materials Corporation Systems and methods for electrically reducing ferroelectric materials to increase bulk conductivity
WO2008092097A2 (en) * 2007-01-26 2008-07-31 Shasta Crystals, Inc. Multi-beam optical afterheater for laser heated pedstal growth
JP2013010656A (ja) * 2011-06-28 2013-01-17 Chichibu Fuji Co Ltd 単一分極化されたニオブ酸リチウム単結晶の製造方法
JP6721948B2 (ja) * 2015-06-18 2020-07-15 住友金属鉱山株式会社 ニオブ酸リチウム単結晶基板とその製造方法
JP6507877B2 (ja) * 2015-06-18 2019-05-08 住友金属鉱山株式会社 ニオブ酸リチウム単結晶基板とその製造方法
JP6477282B2 (ja) * 2015-06-18 2019-03-06 住友金属鉱山株式会社 ニオブ酸リチウム単結晶基板とその製造方法
WO2016204042A1 (ja) * 2015-06-18 2016-12-22 住友金属鉱山株式会社 ニオブ酸リチウム単結晶基板とその製造方法
JP6493151B2 (ja) 2015-10-23 2019-04-03 住友金属鉱山株式会社 ニオブ酸リチウム単結晶基板の製造方法
CN105463581B (zh) * 2015-11-30 2018-02-13 上海召业申凯电子材料有限公司 钽酸锂晶体基片的黑化处理方法
JP6169759B1 (ja) * 2016-07-11 2017-07-26 株式会社山寿セラミックス 弾性表面波素子用基板及びその製造方法
CN106048735B (zh) * 2016-08-12 2018-08-17 天通控股股份有限公司 一种钽酸锂或铌酸锂晶体基片黑化方法
CN106283196A (zh) * 2016-08-16 2017-01-04 上海召业申凯电子材料有限公司 高导电性钽酸锂晶体基片的黑化处理方法
WO2018102666A1 (en) 2016-12-01 2018-06-07 Avery Dennison Retail Information Services, Llc Functional substrates for printed electronic devices
CN106521633B (zh) 2016-12-26 2019-12-13 福建晶安光电有限公司 一种钽酸锂晶体基片的黑化处理方法
US11424730B2 (en) 2016-12-26 2022-08-23 Fujian Jing'an Optoelectronics Co., Ltd. Method for processing a lithium tantalate crystal substrate
CN107620124A (zh) * 2017-09-30 2018-01-23 中电科技德清华莹电子有限公司 一种钽酸锂晶片的黑化处理方法
CN107604443A (zh) * 2017-09-30 2018-01-19 中电科技德清华莹电子有限公司 一种黑化铌酸锂晶片的处理方法
CN107740190A (zh) * 2017-09-30 2018-02-27 中电科技德清华莹电子有限公司 一种黑化钽酸锂晶片的处理方法
CN107675261A (zh) * 2017-09-30 2018-02-09 中电科技德清华莹电子有限公司 一种铌酸锂晶片的黑化处理方法
CN110129891A (zh) * 2018-02-02 2019-08-16 福建晶安光电有限公司 一种晶片的黑化方法及黑化后晶片
JP6999498B2 (ja) * 2018-05-31 2022-01-18 京セラ株式会社 結晶の製造方法および導電率の制御方法
CN110835781B (zh) * 2018-08-16 2021-08-31 江南石墨烯研究院 一种铌酸锂或钽酸锂晶片的黑化方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0097676A4 (en) * 1982-01-04 1985-11-11 Commw Of Australia CONTROL OF DIAMETERS IN CRYSTAL GROWTH ACCORDING TO THE CZOCHRALFKI PROCESS.
JPH0637350B2 (ja) * 1987-02-27 1994-05-18 日立金属株式会社 単分域タンタル酸リチウム単結晶の製造方法
JPH05105592A (ja) * 1991-10-22 1993-04-27 Hitachi Metals Ltd ニオブ酸リチウム単結晶および光素子
JPH0637350A (ja) * 1992-07-15 1994-02-10 Nippon Telegr & Teleph Corp <Ntt> 光信号受信器
WO1994006041A1 (en) * 1992-09-07 1994-03-17 Nikon Corporation Optical waveguide device and optical instrument using the same
JP2843226B2 (ja) * 1993-02-22 1999-01-06 日本碍子株式会社 熱処理容器および単結晶の製造装置
DE69819971T2 (de) 1997-07-25 2004-09-02 Crystal Technology, Inc., Palo Alto Vorbehandelte Kristalle aus Lithiumniobat und Lithiumtantalat und das Verfahren zu ihrer Herstellung
US6319430B1 (en) 1997-07-25 2001-11-20 Crystal Technology, Inc. Preconditioned crystals of lithium niobate and lithium tantalate and method of preparing the same
JPH11236298A (ja) 1997-12-05 1999-08-31 Crystal Technol Inc フォトリソグラフィー法に使用するための結晶および電磁線吸収能を増大させるための該結晶の前状態調節法
US6932957B2 (en) 2002-06-28 2005-08-23 Silicon Light Machines Corporation Method and apparatus for increasing bulk conductivity of a ferroelectric material
KR100496526B1 (ko) 2002-09-25 2005-06-22 일진디스플레이(주) 표면 탄성파 소자용 탄탈산 리튬 단결정 기판의 제조방법
KR100496527B1 (ko) 2002-09-25 2005-06-22 일진디스플레이(주) 표면 탄성파 소자용 탄탈산 리튬 단결정 기판의 제조방법
CN1428464A (zh) * 2002-12-20 2003-07-09 中国科学院上海光学精密机械研究所 化学计量比铌酸锂单晶的制备方法
JP2004269300A (ja) 2003-03-06 2004-09-30 Shin Etsu Chem Co Ltd タンタル酸リチウム結晶の製造方法

Also Published As

Publication number Publication date
DE102004056741A1 (de) 2005-06-16
KR101144258B1 (ko) 2012-05-10
KR20050050539A (ko) 2005-05-31
TW200519241A (en) 2005-06-16
US7309392B2 (en) 2007-12-18
CN1621578A (zh) 2005-06-01
CN1332077C (zh) 2007-08-15
US20050145165A1 (en) 2005-07-07
DE102004056741B4 (de) 2015-05-21

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