TWI346250B - Improved scattering bar opc application method for sub-half wavelength lithography patterning - Google Patents
Improved scattering bar opc application method for sub-half wavelength lithography patterningInfo
- Publication number
- TWI346250B TWI346250B TW093119638A TW93119638A TWI346250B TW I346250 B TWI346250 B TW I346250B TW 093119638 A TW093119638 A TW 093119638A TW 93119638 A TW93119638 A TW 93119638A TW I346250 B TWI346250 B TW I346250B
- Authority
- TW
- Taiwan
- Prior art keywords
- sub
- application method
- half wavelength
- lithography patterning
- scattering bar
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US48310503P | 2003-06-30 | 2003-06-30 | |
US50027203P | 2003-09-05 | 2003-09-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200508788A TW200508788A (en) | 2005-03-01 |
TWI346250B true TWI346250B (en) | 2011-08-01 |
Family
ID=33436772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093119638A TWI346250B (en) | 2003-06-30 | 2004-06-30 | Improved scattering bar opc application method for sub-half wavelength lithography patterning |
Country Status (7)
Country | Link |
---|---|
US (4) | US7354681B2 (zh) |
EP (1) | EP1494071A3 (zh) |
JP (1) | JP4520787B2 (zh) |
KR (2) | KR100903176B1 (zh) |
CN (1) | CN100480860C (zh) |
SG (1) | SG151079A1 (zh) |
TW (1) | TWI346250B (zh) |
Families Citing this family (31)
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US6792029B2 (en) * | 2002-03-27 | 2004-09-14 | Sharp Laboratories Of America, Inc. | Method of suppressing energy spikes of a partially-coherent beam |
EP1494071A3 (en) * | 2003-06-30 | 2008-04-09 | ASML MaskTools B.V. | Improved scattering bar OPC application method for sub-half wavelength lithography patterning |
KR100718216B1 (ko) * | 2004-12-13 | 2007-05-15 | 가부시끼가이샤 도시바 | 반도체 장치, 패턴 레이아웃 작성 방법, 노광 마스크 |
DE102005002533B4 (de) * | 2005-01-14 | 2007-09-13 | Infineon Technologies Ag | Verfahren zum Erzeugen eines Abbildungsfehler vermeidenden Maskenlayouts für eine Maske |
DE102005002529B4 (de) * | 2005-01-14 | 2008-12-04 | Qimonda Ag | Verfahren zum Erzeugen eines Abbildungsfehler vermeidenden Maskenlayouts für eine Maske |
JP4728676B2 (ja) * | 2005-03-30 | 2011-07-20 | 富士通セミコンダクター株式会社 | フォトマスクの製造方法、及びそのフォトマスクを用いた半導体装置の製造方法 |
JP2007240949A (ja) * | 2006-03-09 | 2007-09-20 | Elpida Memory Inc | マスクデータ作成方法及びマスク |
CN101086622B (zh) * | 2006-06-08 | 2010-05-12 | 中芯国际集成电路制造(上海)有限公司 | 一种应用反散射带的方法 |
KR100788372B1 (ko) * | 2006-08-07 | 2008-01-02 | 동부일렉트로닉스 주식회사 | Opc 마스크 패턴 |
KR100818713B1 (ko) * | 2007-03-23 | 2008-04-02 | 주식회사 하이닉스반도체 | 노광 과정 중의 스컴을 억제하는 리소그래피 방법 |
CN101349861B (zh) * | 2007-07-19 | 2010-09-08 | 上海华虹Nec电子有限公司 | 平滑规则式光学临近修正光掩膜图形的方法 |
CN101382728B (zh) * | 2007-09-07 | 2010-07-28 | 北京京东方光电科技有限公司 | 灰阶掩膜版结构 |
CN101399244B (zh) * | 2007-09-26 | 2011-05-18 | 力晶半导体股份有限公司 | 电路结构及用以定义此电路结构的光掩模 |
CN101452205B (zh) * | 2007-11-30 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | 一种散射条生成方法 |
JP5529391B2 (ja) * | 2008-03-21 | 2014-06-25 | ルネサスエレクトロニクス株式会社 | ハーフトーン型位相シフトマスク、そのハーフトーン型位相シフトマスクを有する半導体装置の製造装置、およびそのハーフトーン型位相シフトマスクを用いた半導体装置の製造方法 |
US7910267B1 (en) * | 2008-12-12 | 2011-03-22 | Western Digital (Fremont), Llc | Method and system for providing optical proximity correction for structures such as a PMR nose |
US8015512B2 (en) * | 2009-04-30 | 2011-09-06 | Macronix International Co., Ltd. | System for designing mask pattern |
KR101113326B1 (ko) * | 2009-07-01 | 2012-03-13 | 주식회사 하이닉스반도체 | 포토마스크의 보조패턴 형성방법 |
US8546048B2 (en) | 2010-10-29 | 2013-10-01 | Skyworks Solutions, Inc. | Forming sloped resist, via, and metal conductor structures using banded reticle structures |
US8765329B2 (en) | 2010-11-05 | 2014-07-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sub-resolution rod in the transition region |
CN102486606B (zh) * | 2010-12-03 | 2013-03-27 | 中芯国际集成电路制造(上海)有限公司 | 光刻方法 |
US8887106B2 (en) * | 2011-12-28 | 2014-11-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of generating a bias-adjusted layout design of a conductive feature and method of generating a simulation model of a predefined fabrication process |
US9213233B2 (en) * | 2013-07-12 | 2015-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photolithography scattering bar structure and method |
KR102305092B1 (ko) | 2014-07-16 | 2021-09-24 | 삼성전자주식회사 | 포토리소그래피용 마스크와 그 제조 방법 |
US10522322B2 (en) | 2017-04-13 | 2019-12-31 | Fractilia, Llc | System and method for generating and analyzing roughness measurements |
US10176966B1 (en) | 2017-04-13 | 2019-01-08 | Fractilia, Llc | Edge detection system |
US11380516B2 (en) | 2017-04-13 | 2022-07-05 | Fractilia, Llc | System and method for generating and analyzing roughness measurements and their use for process monitoring and control |
KR102585099B1 (ko) * | 2018-08-31 | 2023-10-06 | 에이에스엠엘 네델란즈 비.브이. | 측정 방법 및 장치 |
CN113050365B (zh) * | 2019-12-27 | 2024-06-21 | 中芯国际集成电路制造(上海)有限公司 | 光学邻近修正方法及系统、掩模版、设备与介质 |
CN113050367A (zh) * | 2019-12-27 | 2021-06-29 | 中芯国际集成电路制造(上海)有限公司 | 光学邻近效应修正方法和系统、掩膜版及其制备方法 |
CN117610495B (zh) * | 2024-01-23 | 2024-04-16 | 合肥晶合集成电路股份有限公司 | 辅助图形的添加方法 |
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US5242770A (en) | 1992-01-16 | 1993-09-07 | Microunity Systems Engineering, Inc. | Mask for photolithography |
EP0634028B1 (en) | 1992-04-06 | 1998-07-22 | MicroUnity Systems Engineering, Inc. | Method for forming a lithographic pattern in a process for manufacturing semiconductor devices |
US5354632A (en) | 1992-04-15 | 1994-10-11 | Intel Corporation | Lithography using a phase-shifting reticle with reduced transmittance |
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US5302477A (en) | 1992-08-21 | 1994-04-12 | Intel Corporation | Inverted phase-shifted reticle |
US5300379A (en) | 1992-08-21 | 1994-04-05 | Intel Corporation | Method of fabrication of inverted phase-shifted reticle |
US5881125A (en) | 1992-09-25 | 1999-03-09 | Intel Corporation | Attenuated phase-shifted reticle using sub-resolution pattern |
US5424154A (en) | 1993-12-10 | 1995-06-13 | Intel Corporation | Lithographic emhancement method and apparatus for randomly spaced structures |
US5447810A (en) | 1994-02-09 | 1995-09-05 | Microunity Systems Engineering, Inc. | Masks for improved lithographic patterning for off-axis illumination lithography |
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US5663893A (en) | 1995-05-03 | 1997-09-02 | Microunity Systems Engineering, Inc. | Method for generating proximity correction features for a lithographic mask pattern |
JP4075966B2 (ja) | 1996-03-06 | 2008-04-16 | エーエスエムエル ネザーランズ ビー.ブイ. | 差分干渉計システム及びこのシステムを具えたリソグラフステップアンドスキャン装置 |
JP2783250B2 (ja) * | 1996-05-01 | 1998-08-06 | 日本電気株式会社 | 露光用マスクパターンの補助パターン自動発生方法 |
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DE69717975T2 (de) | 1996-12-24 | 2003-05-28 | Asml Netherlands B.V., Veldhoven | In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät |
US5821014A (en) * | 1997-02-28 | 1998-10-13 | Microunity Systems Engineering, Inc. | Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask |
USRE40043E1 (en) | 1997-03-10 | 2008-02-05 | Asml Netherlands B.V. | Positioning device having two object holders |
JPH117120A (ja) * | 1997-06-18 | 1999-01-12 | Sony Corp | マスクパターン作成方法およびマスクパターン作成装置並びにマスク作成装置 |
KR100283408B1 (ko) * | 1998-01-21 | 2001-04-02 | 김영환 | 반도체용마스크 |
US6373553B1 (en) | 1999-09-20 | 2002-04-16 | Intel Corp. | Photo-lithographic method to print a line-space pattern with a pitch equal to half the pitch of the mask |
US6562522B1 (en) | 1999-10-29 | 2003-05-13 | Intel Corporation | Photomasking |
EP1164432A1 (en) | 2000-06-13 | 2001-12-19 | ASML Masktools Netherlands B.V. | Optical proximity correction method utilizing serifs having variable dimensions |
US6413683B1 (en) * | 2000-06-23 | 2002-07-02 | International Business Machines Corporation | Method for incorporating sub resolution assist features in a photomask layout |
US6458495B1 (en) | 2000-06-30 | 2002-10-01 | Intel Corporation | Transmission and phase balance for phase-shifting mask |
US6479195B1 (en) | 2000-09-15 | 2002-11-12 | Intel Corporation | Mask absorber for extreme ultraviolet lithography |
FR2818253B1 (fr) * | 2000-12-20 | 2003-04-04 | Valois Sa | Ensemble de conditionnement |
US6632576B2 (en) | 2000-12-30 | 2003-10-14 | Intel Corporation | Optical assist feature for two-mask exposure lithography |
US6881523B2 (en) * | 2001-03-14 | 2005-04-19 | Asml Masktools B.V. | Optical proximity correction method utilizing ruled ladder bars as sub-resolution assist features |
KR100589041B1 (ko) * | 2001-03-30 | 2006-06-13 | 삼성전자주식회사 | 마스크 및 그 형성방법 |
US6703167B2 (en) * | 2001-04-18 | 2004-03-09 | Lacour Patrick Joseph | Prioritizing the application of resolution enhancement techniques |
US6553562B2 (en) | 2001-05-04 | 2003-04-22 | Asml Masktools B.V. | Method and apparatus for generating masks utilized in conjunction with dipole illumination techniques |
US6548417B2 (en) | 2001-09-19 | 2003-04-15 | Intel Corporation | In-situ balancing for phase-shifting mask |
US6627362B2 (en) | 2001-10-30 | 2003-09-30 | Intel Corporation | Photolithographic mask fabrication |
US6625802B2 (en) | 2002-02-01 | 2003-09-23 | Intel Corporation | Method for modifying a chip layout to minimize within-die CD variations caused by flare variations in EUV lithography |
EP1494071A3 (en) * | 2003-06-30 | 2008-04-09 | ASML MaskTools B.V. | Improved scattering bar OPC application method for sub-half wavelength lithography patterning |
-
2004
- 2004-06-30 EP EP04253957A patent/EP1494071A3/en not_active Withdrawn
- 2004-06-30 CN CNB2004100640945A patent/CN100480860C/zh not_active Expired - Fee Related
- 2004-06-30 TW TW093119638A patent/TWI346250B/zh not_active IP Right Cessation
- 2004-06-30 SG SG200403807-1A patent/SG151079A1/en unknown
- 2004-06-30 KR KR1020040050147A patent/KR100903176B1/ko not_active IP Right Cessation
- 2004-06-30 JP JP2004220959A patent/JP4520787B2/ja not_active Expired - Fee Related
- 2004-06-30 US US10/880,376 patent/US7354681B2/en not_active Expired - Fee Related
-
2008
- 2008-02-21 US US12/071,439 patent/US7485396B2/en not_active Expired - Fee Related
- 2008-11-10 KR KR1020080110996A patent/KR100919858B1/ko not_active IP Right Cessation
-
2009
- 2009-01-08 US US12/350,919 patent/US7892707B2/en not_active Expired - Fee Related
-
2011
- 2011-02-22 US US13/032,590 patent/US8039180B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1494071A3 (en) | 2008-04-09 |
CN1577107A (zh) | 2005-02-09 |
US8039180B2 (en) | 2011-10-18 |
US20050074677A1 (en) | 2005-04-07 |
TW200508788A (en) | 2005-03-01 |
CN100480860C (zh) | 2009-04-22 |
US20110143268A1 (en) | 2011-06-16 |
KR20050002641A (ko) | 2005-01-07 |
US7892707B2 (en) | 2011-02-22 |
EP1494071A2 (en) | 2005-01-05 |
SG151079A1 (en) | 2009-04-30 |
JP2005031690A (ja) | 2005-02-03 |
KR100919858B1 (ko) | 2009-09-30 |
KR100903176B1 (ko) | 2009-06-17 |
JP4520787B2 (ja) | 2010-08-11 |
US7485396B2 (en) | 2009-02-03 |
US7354681B2 (en) | 2008-04-08 |
US20090233186A1 (en) | 2009-09-17 |
KR20080114639A (ko) | 2008-12-31 |
US20080206656A1 (en) | 2008-08-28 |
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Legal Events
Date | Code | Title | Description |
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MM4A | Annulment or lapse of patent due to non-payment of fees |