TWI346250B - Improved scattering bar opc application method for sub-half wavelength lithography patterning - Google Patents

Improved scattering bar opc application method for sub-half wavelength lithography patterning

Info

Publication number
TWI346250B
TWI346250B TW093119638A TW93119638A TWI346250B TW I346250 B TWI346250 B TW I346250B TW 093119638 A TW093119638 A TW 093119638A TW 93119638 A TW93119638 A TW 93119638A TW I346250 B TWI346250 B TW I346250B
Authority
TW
Taiwan
Prior art keywords
sub
application method
half wavelength
lithography patterning
scattering bar
Prior art date
Application number
TW093119638A
Other languages
English (en)
Other versions
TW200508788A (en
Inventor
Thomas Laidig
Kurt E Wampler
Den Broeke Douglas Van
Jang Fung Chen
Original Assignee
Asml Masktools Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Masktools Bv filed Critical Asml Masktools Bv
Publication of TW200508788A publication Critical patent/TW200508788A/zh
Application granted granted Critical
Publication of TWI346250B publication Critical patent/TWI346250B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW093119638A 2003-06-30 2004-06-30 Improved scattering bar opc application method for sub-half wavelength lithography patterning TWI346250B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US48310503P 2003-06-30 2003-06-30
US50027203P 2003-09-05 2003-09-05

Publications (2)

Publication Number Publication Date
TW200508788A TW200508788A (en) 2005-03-01
TWI346250B true TWI346250B (en) 2011-08-01

Family

ID=33436772

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093119638A TWI346250B (en) 2003-06-30 2004-06-30 Improved scattering bar opc application method for sub-half wavelength lithography patterning

Country Status (7)

Country Link
US (4) US7354681B2 (zh)
EP (1) EP1494071A3 (zh)
JP (1) JP4520787B2 (zh)
KR (2) KR100903176B1 (zh)
CN (1) CN100480860C (zh)
SG (1) SG151079A1 (zh)
TW (1) TWI346250B (zh)

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US8765329B2 (en) 2010-11-05 2014-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Sub-resolution rod in the transition region
CN102486606B (zh) * 2010-12-03 2013-03-27 中芯国际集成电路制造(上海)有限公司 光刻方法
US8887106B2 (en) * 2011-12-28 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method of generating a bias-adjusted layout design of a conductive feature and method of generating a simulation model of a predefined fabrication process
US9213233B2 (en) * 2013-07-12 2015-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Photolithography scattering bar structure and method
KR102305092B1 (ko) 2014-07-16 2021-09-24 삼성전자주식회사 포토리소그래피용 마스크와 그 제조 방법
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CN113050365B (zh) * 2019-12-27 2024-06-21 中芯国际集成电路制造(上海)有限公司 光学邻近修正方法及系统、掩模版、设备与介质
CN113050367A (zh) * 2019-12-27 2021-06-29 中芯国际集成电路制造(上海)有限公司 光学邻近效应修正方法和系统、掩膜版及其制备方法
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Also Published As

Publication number Publication date
EP1494071A3 (en) 2008-04-09
CN1577107A (zh) 2005-02-09
US8039180B2 (en) 2011-10-18
US20050074677A1 (en) 2005-04-07
TW200508788A (en) 2005-03-01
CN100480860C (zh) 2009-04-22
US20110143268A1 (en) 2011-06-16
KR20050002641A (ko) 2005-01-07
US7892707B2 (en) 2011-02-22
EP1494071A2 (en) 2005-01-05
SG151079A1 (en) 2009-04-30
JP2005031690A (ja) 2005-02-03
KR100919858B1 (ko) 2009-09-30
KR100903176B1 (ko) 2009-06-17
JP4520787B2 (ja) 2010-08-11
US7485396B2 (en) 2009-02-03
US7354681B2 (en) 2008-04-08
US20090233186A1 (en) 2009-09-17
KR20080114639A (ko) 2008-12-31
US20080206656A1 (en) 2008-08-28

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