1345274 九、發明說明： 【發明所屬之技術領域】 本發明係關於在電子元件構裝裝置用來加壓工件之加 壓吸附具。 【先前技術】 藉由晶片接合裝置等，將半導體晶片等電子零件構裝 於電路基板上時，通常使用下列方法較多，即，以吸附具 真空吸附半導體晶片而搬運至構裝位置，將半導體晶片載 置於既定之構裝位置後’一邊以加熱機構溶解塗布於半導 體晶片與電路基板間之接著劑或黏貼於半導體晶片背面之 熱壓薄膜’一邊藉由吸附具加壓半導體晶片來壓裝半導體 省知之半導體晶片，多半係形成為厚度4〇〇以⑺以下 且尺寸5〜25mm左右之方型，且在背面貼附作為接合材之 %氧樹知系或聚醯亞胺樹脂系之熱壓薄膜（晶片附著薄 膜），吸附具以具有大致與半導體晶片相同尺寸且平坦的加 壓面、且設置吸引孔於此加壓面者為其代表。 將如上述半導體晶片壓裝於在表 路基板1 面具有微小凹凸之電1345274 IX. Description of the Invention: [Technical Field] The present invention relates to a pressure-adsorbing tool for pressing a workpiece in an electronic component mounting device. [Prior Art] When an electronic component such as a semiconductor wafer is mounted on a circuit board by a wafer bonding apparatus or the like, the following methods are generally used, that is, the adsorption tool vacuum-adsorbs the semiconductor wafer and transports it to the mounting position, and the semiconductor is used. After the wafer is placed at a predetermined mounting position, the semiconductor device is pressed by the adsorption device while the semiconductor device is pressed by the adhesive device by dissolving the adhesive applied between the semiconductor wafer and the circuit substrate or the hot-pressed film adhered to the back surface of the semiconductor wafer. The semiconductor wafer known to the semiconductor is formed into a square shape having a thickness of 4 Å or less and a size of 5 to 25 mm, and a heat of % oxygen tree or polyimine resin as a bonding material is attached to the back surface. The pressure film (wafer-attached film) is represented by a suction tool having a flat pressure surface which is substantially the same size as the semiconductor wafer and a suction hole provided thereon. Pressing the semiconductor wafer as described above on the surface of the surface substrate 1 having minute irregularities
電路基 亦不能擠出已滲入晶片附著薄膜與電 而產生氣泡導致接合不良。 之接合不良，如圖8(a) 為防止如上述夾雜空氣所產生 5 1345274 所示，已提案一種吸附具5 1，係將其中央部突出成形之彈 性體加壓部55安裝於加壓面57，以使半導體晶片33之加 壓可從半導體晶片33中心部漸漸擴大至周緣部來進行（例 • 如’參照專利文獻1)。使用此種吸附具5 1將半導體晶片33 ' 構農於電路基板31時，係使吸附孔35呈真空狀態而將半 導體晶片33搬運至電路基板31上後載置，藉由吸附具51 對半導體晶片33加壓時’首先以突出成形之彈性體加壓 _ 部55加壓半導體晶片33中央部。然後，如圖8(b)所示， 若進一步提高吸附具51之加壓力，吸附具51之加壓部55 的加壓面5 7則彈性變形漸漸成為平面，使吸附具5 1對半 導體晶片33之加壓範圍向外側擴大，同時使已滲入晶片 附著薄膜53與電路基板31間之空氣被擠出至周緣部。又， 亦已提案另一種方法’即’不將吸附孔3 5設置於吸附具5 j 中央部’而在加壓部55周邊設置真空孔，將半導體晶片33 彎曲成沿中央部突出之彈性體加壓部55的形狀來吸附， φ 於加壓時從中央突出部壓裝於電路基板，以防止在晶片附 著薄膜53與電路基板3 1之間滲入氣泡（例如，參照專利文 獻2)。 專利文獻1 :日本特開2005— 1503 1 1號公報 專利文獻2 :曰本特開2005— 322815號公報 【發明内容】 另一方面’近年來要求半導體元件之微細化、高速化， 要求Cu配線及層間絕緣膜之低介電率化，開始使用介電 率 3.5 左右之 FGS(Fluorinated Silica Glass)膜’或介電率 2.8 6 1345274 左右之高平坦化層間絕緣膜材料等低介電率層間絕緣膜材 料（Low— K材料）。然而，此種低介電率層間絕緣膜材料 (Low—K材料）因導入空孔以降低介電率，故機械強度（硬 度、彈性率等）低，半導體晶片33則無法耐受大壓力。若 藉由如上述專利文獻1、2之中央突出形狀之吸附具加壓 使用此種低介電率層間絕緣膜材料（Low— K材料）之半導體 晶片33，在半導體晶片33中央部即會承受較大壓力，有 時會有因為此壓力而使半導體晶片33破損之情形。若為 防止δ亥半導體晶片之破損而降低加壓壓力則又會導致周緣 部之加壓壓力下降，導致無法擠出周緣部之晶片附著薄膜 53與電路基板31間之空氣，進而產生氣泡造成接合不良。 又’因不能配合半導體晶片33之構造強度變更半導體晶 片3 3之加壓位置、加壓壓力等，故有不能有效去除氣泡 之問題。 因此，本發明之目的在於：對應半導體晶片之形狀、 構造有效防止半導體晶片與電路基板間產生氣泡。 本發明之多段加壓吸附具，係具備：複數個加壓吸附 具要件’分別加壓工件之一部分；及彈簀，配設於各吸附 具要件間；將此等加壓吸附具要件與彈簧朝加壓方向串聯 組合而構成’其特徵在於：於加壓狀態，各彈簧，係藉由 其彈壓力將較該彈簧位於工件侧之加壓吸附具要件緊壓於 工件’於初始狀態’各加壓吸附具要件，係使該加壓吸附 具要件之工件側前端位置與鄰接之加壓吸附具要件之工件 侧前端位置僅具有各彈簧之壓縮量之段差來組合。 7 1345274 又’於本發明之多段加壓吸附具，複數個加壓吸附具 要件’較佳為包含··柱狀吸附具要件，配設於中央；及複 數個環狀吸附具要件，内嵌狀疊合於該柱狀吸附具要件外 周。進一步，複數個加壓吸附具要件，較佳為亦包含：柱 狀吸附具要件，配設於一端；及複數個角型吸附具要件， 朝加壓方向與直角方向且向另一端疊合於該柱狀吸附具要 件。 本發明發揮對應半導體晶片之形狀、構造可有效防止 半導體晶片與電路基板間產生氣泡的效果。 【實施方式】 以下’參照圖1 ~3說明本發明之適當實施形態。圖1 係表示多段加壓吸附具的部分剖面圖與各加壓吸附具要件 的俯視圖’圖2係多段加壓吸附具的加壓動作說明圖，圖 3係表示當施加與時間成正比之壓下力時之各加壓吸附具 之位移與加壓壓力之關係的圖表。 如圖1所示，多段加壓吸附具11，於配置在中央之四 角柱之第1段加壓吸附具要件13，將四角環狀且具底部之 第2段加壓吸附具要件15及第3段加壓吸附具要件17朝 縱方向疊合成套疊狀’在第1段加壓吸附具要件13與第2 段加壓吸附具要件1 5之底部間將第1段彈簧23沿上下方 向之中心軸37朝縱方向夾住，同樣在第2段加壓吸附具 要件1 5之底部與第3段加壓吸附具要件丨7之底部間將第 2段彈簧25沿上下方向之中心轴37朝縱方向夹住。各加 壓吸附具要件與彈簧’依第1段加壓吸附具要件丨3、第i 8 1345274 段彈簧23、第2段加壓吸附具要件μ、筮，饥观仗 — 第2段彈簧25 ' 弟3段加壓吸附具要件！ 7之順序沿上 r万向之中心軸37 串聯組合，在第3段加壓吸附具要件17上側安裝有上下 方向驅動用之音圈馬達29。此上下方向驅 : &勖之馬達不限於 音圈馬達，亦可係線型馬達’只要係組合旋轉馬達與連桿、 凸輪等來將多段加壓吸附具U帛上下方向驅動者即可。 各段加壓吸附具要件13, 15, 17係以鋼等金屬製，能耐於 重複之加壓動作，各加壓吸附具要件之橫方向間隙係各加 壓吸附具要件彼此能朝縱方向滑動之程度之微小間隙。在 第1段加壓吸附具要件13開有吸附孔35，用以真空吸附 半導體晶片33，連接於未圖示之真空裝置。又，第3段加 壓吸附具要件17之外形尺寸係大致與半導體晶片33相同 尺寸。 當使音圈馬達29向下移動以壓下多段加壓吸附具i工 來加壓半導體晶片33時，第！段彈簧23與第2段彈簧25 被各加壓吸附具要件13，15，17壓縮，分別縮短hi及的 長度，藉由該彈壓力使各加壓吸附具要件13，15，17緊壓 於半導體晶片33。並且，多段加壓吸附具丨丨在初始狀態 時’王體之組合係於第1段加壓吸附具要件13與第2段 加壓吸附具要件15之工件側前端位置之加壓面13a，15a， 具有加壓時之第1段彈簧23之壓縮量h〗的段差，於第2 段加壓吸附具要件1 5與第3段加壓吸附具要件1 7之工件 側前端位置之加壓面15a，1 7a具有加壓時之第2段彈篑25 之壓縮量的段差。又，第1段彈簧23係較第2段彈簧 9 1345274 25硬，即彈簧常數大之彈簧。 參照圖2 ’說明以多段加壓吸附具11進行半導體晶片 33構裝之步驟’及多段加壓吸附具11之各加壓吸附具要 件與各段彈簧動作之概略。 如圖2(a)所示，多段加壓吸附具u使吸附孔35成真 空狀態而吸附半導體晶片33，藉由晶片接合裝置之驅動裝 置移動至將半導體晶片33構裝於電路基板31的構裝位 置。當半導體晶片33抵達構裝位置時，藉由晶片接合| 置之驅動裝置使多段加壓吸附具向下移動至半導體晶片33 位於電路基板31之構裝面32正上方。然後驅動音圈馬達 29 ’使半導體晶片33向電路基板31之構裝面32開始向 下移動。 如圖2(b)所示，在半導體晶片33背面之晶片附著薄膜 53接觸於電路基板31之構裝面32之狀態下，因各段之彈 簀23，25尚未被壓縮，故第1段加壓吸附具要件13之加 壓面13a與弟2段加壓吸附具要件15之加壓面15a具有段 差h〗’第2段加壓吸附具要件15之加壓面15a與第3段 加壓吸附具要件17之加壓面17a具有段差h2。當從此狀 態驅動音圈馬達2 9使第3段加壓吸附具要件17向下移動 時’即藉由其向下移動壓縮第2段彈舞25，藉由第2段彈 簧之舞壓力向下壓下使第2段加壓吸附具要件15向下移 動’藉由第2段加壓吸附具要件15之向下移動壓縮第1 段彈箐23，藉由第1段彈簧之彈壓力使第1段加壓吸附具 要件13之加壓面13a加壓半導體晶片33。圖2(b)之俯視 1^45274 圖上之斜線部分係表示半導體晶片33被加壓之區域。如 上述由於各段之加壓吸附具要件與各段之彈簧係串聯組 & ’因此能藉由使最上部之第3段加壓吸附具要件17向 下移動’來以最下層之第1段加壓吸附具要件1 3加壓半 導體晶片33。並且’若更進一步使驅動音圈馬達29向下 矛夕動’各段之彈簧23，25縮短，使第1段加壓吸附具要件 13對半導體晶片33之加壓力亦增強。 如圖2(c)所示，當藉由音圈馬達29向下移動使第1段 彈簧23之壓縮量到達h]時，原於初始狀態第1段加壓吸 附具要件13之加壓面13 a與第2段加壓吸附具要件15之 加壓面1 5 a間所具有之段差&即會消失，第2段加壓吸附 具要件15抵接於半導體晶片33。此時，第3段加壓吸附 具要件1 7 ’雖亦從最初位置向下移動第1段彈簧之壓縮量 h,加上第2段彈簧之壓縮量，但因第2段彈簧25之彈簧 剛性較第1段彈簧23大而壓縮量較少，故第3段加壓吸 附具要件17尚未抵接於半導體晶片33 ^在此狀態下如圖 2(c)俯視圖之斜線所示，僅第1段加壓吸附具要件丨3與第 2段加壓吸附具要件15所抵接之半導體晶片33之區域被 加麼。並且，藉由使第2段加壓吸附具要件抵接於半導體 曰曰片3 3 ’使第1段彈簧2 3不再縮短’故由第1段加壓吸 附具要件13之加壓面13 a所加壓之部分之加壓壓力，不會 隨音圈馬達29之向下移動而變化。另一方面，由第2段 加壓吸附具要件15之加壓面1 5 a加壓之區域，則隨音圈馬 達29之向下移動逐漸增加加壓壓力。又，第2段彈簧25 11 1345274 因音圈馬達29使第3段加壓吸附具要件1 7向下移動而漸 漸壓縮，使該加壓面17a逐漸接近半導體晶片3 3。The circuit substrate also cannot be extruded and has penetrated into the wafer-attached film to generate electricity and cause air bubbles to cause poor bonding. The bonding failure is as shown in Fig. 8(a). In order to prevent the occurrence of the above-mentioned air inclusion 5 1345274, an adsorption tool 51 is proposed, and the elastic body pressing portion 55 which is formed by projecting the central portion thereof is attached to the pressing surface. 57. The pressurization of the semiconductor wafer 33 can be gradually extended from the central portion of the semiconductor wafer 33 to the peripheral portion (for example, see "Patent Document 1"). When the semiconductor wafer 33' is grown on the circuit board 31 by using the adsorption tool 51, the semiconductor wafer 33 is transported to the circuit board 31 after the adsorption hole 35 is in a vacuum state, and is placed on the circuit board 31 by the adsorption tool 51. When the wafer 33 is pressurized, 'the first portion of the semiconductor wafer 33 is pressed by the elastic body pressing portion 55 which is formed by the protrusion. Then, as shown in Fig. 8(b), if the pressing force of the adsorbing device 51 is further increased, the pressing surface 57 of the pressing portion 55 of the adsorbing device 51 is elastically deformed to become a flat surface, so that the adsorbing device 51 has a pair of semiconductor wafers. The pressurization range of 33 is expanded to the outside, and the air that has penetrated between the wafer-attached film 53 and the circuit board 31 is extruded to the peripheral portion. Further, another method has been proposed in which the suction hole 35 is not provided in the central portion of the adsorption device 5 j and a vacuum hole is provided around the pressing portion 55 to bend the semiconductor wafer 33 into an elastic body protruding along the central portion. The shape of the pressurizing portion 55 is adsorbed, and φ is pressed against the circuit board from the center projecting portion during pressurization to prevent air bubbles from penetrating between the wafer-attached film 53 and the circuit board 31 (see, for example, Patent Document 2). [Patent Document 1] Japanese Patent Laid-Open Publication No. 2005-1503 No. 2005-A. PCT Publication No. 2005- 322815. [Invention] In recent years, in recent years, semiconductor devices are required to be miniaturized and high-speed, and Cu wiring is required. And the low dielectric constant of the interlayer insulating film, starting with a low dielectric constant interlayer insulating such as a FGS (Fluorinated Silica Glass) film having a dielectric constant of about 3.5 or a high planarization interlayer insulating film material having a dielectric constant of about 2.8 6 1345274 or so. Membrane material (Low-K material). However, such a low dielectric interlayer insulating film material (Low-K material) is introduced into the void to lower the dielectric constant, so that the mechanical strength (hardness, modulus, etc.) is low, and the semiconductor wafer 33 cannot withstand a large pressure. When the semiconductor wafer 33 using such a low dielectric interlayer insulating film material (Low-K material) is pressurized by the adsorbing tool of the central protruding shape of Patent Documents 1 and 2, it is received at the center of the semiconductor wafer 33. At a large pressure, there is a case where the semiconductor wafer 33 is broken due to this pressure. If the pressure is lowered to prevent the breakage of the δ-Her semiconductor wafer, the pressure of the peripheral portion is lowered, and the air between the wafer-attached film 53 and the circuit substrate 31 at the peripheral portion cannot be extruded, and bubbles are formed. bad. Further, since the pressing position of the semiconductor wafer 33, the pressurizing pressure, and the like cannot be changed in accordance with the structural strength of the semiconductor wafer 33, there is a problem that the bubbles cannot be effectively removed. Therefore, an object of the present invention is to effectively prevent generation of air bubbles between a semiconductor wafer and a circuit board in accordance with the shape and structure of the semiconductor wafer. The multi-stage pressure adsorption device of the present invention comprises: a plurality of pressure adsorption tool elements respectively - one part of the workpiece is pressed; and a magazine is disposed between the elements of the adsorption tool; the pressure adsorption device requirements and the spring Formed in series in the direction of pressurization, characterized in that, in the pressurized state, each spring is pressed against the workpiece in the initial state by the elastic pressure of the spring on the workpiece side by the spring pressure. The pressure-adsorbing tool element is such that the workpiece-side front end position of the pressure-adsorbing tool element and the workpiece-side front end position of the adjacent pressure-adsorbing tool element are combined with only a step difference of the compression amounts of the springs. 7 1345274 Further, in the multi-stage pressure adsorption device of the present invention, a plurality of pressure adsorption tool elements are preferably included in the columnar adsorption device, and are disposed at the center; and a plurality of annular adsorption device elements are embedded. The shape is superimposed on the outer circumference of the columnar absorbent member. Further, the plurality of pressurized adsorption device components preferably further include: a columnar adsorption device element disposed at one end; and a plurality of angular adsorption device elements, which are superposed on the pressing direction and the right angle direction and are overlapped to the other end. The columnar adsorption device is required. The present invention exerts an effect of preventing the generation of bubbles between the semiconductor wafer and the circuit substrate in accordance with the shape and structure of the semiconductor wafer. [Embodiment] Hereinafter, a preferred embodiment of the present invention will be described with reference to Figs. Figure 1 is a partial cross-sectional view showing a multi-stage pressurized adsorption device and a plan view of the components of each pressurized adsorption device. Figure 2 is a diagram showing the pressing action of the multi-stage pressurized adsorption device, and Figure 3 is a view showing the pressure proportional to the time when applied. A graph showing the relationship between the displacement of each pressurized adsorbent and the pressurizing pressure at the time of the lower force. As shown in Fig. 1, the multi-stage pressure-adsorbing tool 11 is placed on the first stage of the four-corner column of the central pressure-adsorbing tool element 13, and the second-stage pressure-adsorbing tool element 15 and the fourth-stage annular and bottomed portion are provided. The three-stage pressurized adsorption device element 17 is stacked in the longitudinal direction to form a nested shape. The first-stage spring 23 is moved up and down between the first-stage pressure-adsorbing tool element 13 and the second-stage pressure-adsorbing device element 15 The central shaft 37 is clamped in the longitudinal direction, and the second-stage spring 25 is also moved in the vertical direction between the bottom of the second-stage pressurized adsorber element 15 and the bottom of the third-stage pressurized adsorber element 丨7. 37 clamped in the longitudinal direction. Each pressure adsorption tool element and spring 'according to the first stage pressure adsorption tool element 丨3, the i i 8 1345274 section spring 23, the second stage pressure adsorption tool element μ, 筮, 饥观仗 - the second stage spring 25 'Different 3 paragraph pressure adsorption equipment requirements! The order of 7 is combined in series along the central axis 37 of the upper direction, and the voice coil motor 29 for driving in the up and down direction is attached to the upper side of the third stage of the pressurizing tool member 17. The motor in the up and down direction is not limited to the voice coil motor, and the line type motor may be driven by a combination of a rotary motor, a link, a cam, or the like to drive the multistage pressurizing device U 帛 in the up and down direction. Each of the pressure adsorption tool elements 13, 15, 17 is made of metal such as steel, and can withstand repeated pressurization operations. The lateral direction of each of the pressure-adsorbing elements is such that the pressure-adsorbing elements can slide in the longitudinal direction. A small gap in the degree. In the first stage, the pressurizing tool member 13 is provided with an adsorption hole 35 for vacuum-adsorbing the semiconductor wafer 33 and connected to a vacuum device (not shown). Further, the third-stage pressurized adsorbent element 17 has an outer dimension substantially the same as that of the semiconductor wafer 33. When the voice coil motor 29 is moved downward to press down the multi-stage pressure absorbing tool to pressurize the semiconductor wafer 33, the first! The segment spring 23 and the second segment spring 25 are compressed by the respective pressure-adsorbing tool elements 13, 15, 17 to shorten the length of hi, respectively, by which the pressure-adsorbing tool elements 13, 15, 17 are pressed against Semiconductor wafer 33. Further, when the multi-stage pressurized adsorption device is in the initial state, the combination of the king body is applied to the pressing faces 13a, 15a of the workpiece-side front end position of the first-stage pressurizing applicator element 13 and the second-stage pressurizing applicator member 15, The step difference of the compression amount h of the first-stage spring 23 at the time of pressurization, and the pressurizing surface 15a of the workpiece-side front end position of the second-stage pressurized adsorbent element 15 and the third-stage pressurized adsorber element 17 , 1 7a has a step difference of the compression amount of the second stage magazine 25 when pressurized. Further, the first-stage spring 23 is harder than the second-stage spring 9 1345274 25, that is, a spring having a large spring constant. Referring to Fig. 2', the steps of the steps of assembling the semiconductor wafer 33 by the multistage pressurizing device 11 and the pressurizing adsorbent elements of the multistage pressurizing device 11 and the operation of the respective stages of springs will be described. As shown in FIG. 2(a), the multi-stage pressurizing device u causes the adsorption holes 35 to be in a vacuum state to adsorb the semiconductor wafer 33, and is moved by the driving device of the wafer bonding apparatus to the structure in which the semiconductor wafer 33 is mounted on the circuit substrate 31. Loading position. When the semiconductor wafer 33 reaches the mounting position, the multi-stage pressurizing device is moved downward by the wafer bonding device to the semiconductor wafer 33 directly above the mounting surface 32 of the circuit substrate 31. Then, the voice coil motor 29' is driven to start the semiconductor wafer 33 to move downward toward the mounting surface 32 of the circuit board 31. As shown in FIG. 2(b), in a state where the wafer adhering film 53 on the back surface of the semiconductor wafer 33 is in contact with the mounting surface 32 of the circuit board 31, since the magazines 23, 25 of the respective stages are not yet compressed, the first stage The pressurizing surface 13a of the pressurized adsorbing tool element 13 and the pressurizing surface 15a of the second-stage pressurized adsorbing tool element 15 have a step difference h'', and the pressurizing surface 15a and the third section of the second stage pressurized adsorbing tool element 15 are added. The pressing surface 17a of the pressurizing tool member 17 has a step h2. When the voice coil motor 29 is driven from this state to move the third-stage pressurizing applicator member 17 downward, that is, by moving downwardly, the second-stage dance 25 is compressed, and the pressure of the second-stage spring is downward. Pressing down to move the second-stage pressurized adsorber element 15 downwards. The first stage of the magazine 23 is compressed by the downward movement of the second-stage pressurized adsorber element 15 by the spring pressure of the first stage spring. The pressurizing surface 13a of the 1-stage pressurized adsorber element 13 pressurizes the semiconductor wafer 33. The hatched portion of Fig. 2(b) is a region where the semiconductor wafer 33 is pressurized. As described above, the pressurization of the pressure-receiving member of each segment and the spring series of each segment are combined & ', so that the lowermost layer of the lowermost layer can be moved by moving the uppermost third-stage pressurized adsorber element 17 downwards' The segment pressurizing tool member 13 pressurizes the semiconductor wafer 33. Further, the springs 23, 25 of the respective segments that drive the voice coil motor 29 downward are further shortened, so that the pressure applied to the semiconductor wafer 33 by the first-stage pressurized adsorber member 13 is also enhanced. As shown in Fig. 2(c), when the compression amount of the first-stage spring 23 reaches h] by the downward movement of the voice coil motor 29, the pressing surface of the first-stage pressure-adsorbing member 13 originally in the initial state is as shown in Fig. 2(c). The step difference between the 13a and the pressurizing surface 15a of the second stage pressurized adsorbent element 15 will disappear, and the second stage pressurizing tool element 15 abuts on the semiconductor wafer 33. At this time, the third stage pressurizing device requirement 1 7 ' also moves downward from the initial position to the compression amount h of the first stage spring, plus the compression amount of the second stage spring, but the spring of the second stage spring 25 The rigidity is larger than that of the first-stage spring 23, and the amount of compression is small. Therefore, the third-stage pressurized adsorber element 17 has not yet abutted on the semiconductor wafer 33. In this state, as shown by the oblique line in the top view of FIG. 2(c), only the first The area of the semiconductor wafer 33 to which the one-stage pressurized adsorbent element 丨3 and the second-stage pressurized sorbent element 15 abut are applied. Further, by pressing the second-stage pressurized adsorber element against the semiconductor die 3 3 ', the first-stage spring 2 3 is no longer shortened, so the pressurizing surface 13 of the first-stage pressurized adsorber element 13 is pressed. The pressing pressure of the portion to be pressurized does not change as the voice coil motor 29 moves downward. On the other hand, the region pressurized by the pressing surface 15 5 of the second-stage pressurized adsorber element 15 gradually increases the pressing pressure as the voice coil motor 29 moves downward. Further, the second-stage spring 25 11 1345274 is gradually compressed by the voice coil motor 29 to move the third-stage pressurized adsorber element 17 downward, and the pressurizing surface 17a is gradually brought closer to the semiconductor wafer 33.
如圖2(d)所示，當隨音圈馬達29之向下移動使第2段 彈簧25之壓縮達到h2時，在初始狀態位於第2段加壓吸 附具要件15之加壓面15a與第3段加壓吸附具要件17之 加壓面1 7a間之段差h2即會消失，第3段加壓吸附具要件 ^抵接於半導體晶片33。藉此如圖2(d)俯視圖之斜線所 示’除第1段加壓吸附具要件13與第2段加壓吸附具要 件1 5外，第3段加壓吸附具要件17所抵接之半導體晶片 33之區域亦被加壓。並且，因藉由第3段加壓吸附具要件 17抵接於半導體晶片33，而與第1段彈簧23同樣地使第 2段彈簧25亦不再壓縮，故由第2段加壓吸附具要件i 5 之加壓面15a加壓之部分之加壓壓力，亦不隨音圈馬達29 之向下移動變化。另一方面，由第3段加壓吸附具要件17 之加壓面17a加壓之區域，則隨音圈馬達29之向下移動逐 漸增加加壓壓力。接著，當帛3段加壓吸附具要件17之 塹面17a之加壓壓力達到既定之壓力時，停止音圈馬達 向下移動然後，藉由晶片接合裝置之驅動機構使多 段加壓吸附具U離開半導體晶片33之面。 如上述，由於多段加壓吸附* u最初加壓半導體晶片 33之中央部分’然後依序擴大加壓區域至周緣冑，因此能 將渗入半導體晶片33背面之晶片附著薄膜53與電路基板 31間之空氣從中央依序擠出至周緣部，發揮有效防止因空 耽封入於晶片附著薄膜53與電路基板η間而造成氣泡產 12 1345274 生之效果。又’藉此，因不需要在局部施加大壓力便能有 效防止氣泡產生，因此可發揮不容易損傷半導體晶片3 3 之效果。 圖1、2所示之多段加壓吸附具1 1之各段吸附具要件 加壓半導體晶片33之壓力，可藉由變更所組合之彈簧剛 性，或各段吸附具要件之形狀而變更。藉此發揮能配合半 導體晶片33之機械強度來變更加壓壓力之效果。 以下，參照圖3，作為一例說明，藉由音圈馬達29使 第3段加壓吸附具要件17之壓下力F與時間t成正比增加 來加壓時的各部之動作細節。圖3(a)係表示第3段吸附具 要件1 7之壓下力F與由各段加壓吸附具要件所產生之加 壓壓力P2，P3相對時間之變化，圖3(b)係表示當施加該 壓下力F時之各段加壓吸附具要件之加壓面na，15&，17& 從各初始位置之位移yi，yz，y3。又，在以下之說明中，係 假設各段加壓吸附具要件之加壓面面積為Αι，八2, A;，各 段彈簧之彈簧常數為kl，k2。 如圖3(a)所不，第3段吸附具要件17係受音圈馬達29 以與時間成正比之壓下力F== axt(a係常數）壓下。如圖3(幻 之1點鏈線所示，壓下力F係時間t=〇時為〇。且當全段 之加壓吸附具要件13，15，17以既定之加壓壓力p" p2，p3 加壓半導體晶片33之狀態時，即為F=PiXAi+p2xA2+p3x a3其間壓下力F則與時間t成正比直線狀地增加。當音 圈馬達29在第1段加壓吸附具要件i 3抵接於半導體晶片 33上之狀態下開始上述壓下動作時，則如目⑽所示各段 13 1345274 加壓面13a，15a，17a之位置開始變化。由於第1段加壓吸 附具要件13之加壓面13a已抵接於半導體晶片33上，因 此其位移固定為0。另一方面第2段加壓吸附具要件15之 加壓面15a與第3段加壓吸附具要件17之加壓面17a因藉 由壓下力F壓縮彈簧23, 25而開始向下方位移。在第2段 加壓吸附具要件抵接於半導體晶片33之前的期間，第1 段彈簧23、第2段彈簧25皆因壓下力f產生壓縮。第2 段加壓吸附具要件15之加壓面15a的位移y2，係沿具有 與第1段彈簧23之彈簧剛性1/心成正比之斜率的直線， 與時間成正比地增加。 yfF/ki =( a /kjxt 式（1) 又’第3段加壓吸附具要件17之加壓面17a的位移y3， 係沿具有與串聯第1段彈簧23與第2段彈簧之彈簧剛性 (k〗+ ^/(l^xkO成正比之斜率的直線，與時間成正比地增 加。 y3=Fx(k!+ k2)/(k!xk2) = [(α x(k!+ k2)/(k,xk2)]xt 式（2) 如圖3(b)所示，第3段加壓吸附具要件17之加壓面17a 的位移y3，係第1段彈簀23壓縮所造成之第2段加壓吸 附具要件1 5之加壓面15 a之位移y 2，與虛線所示之第2 段彈簧25之壓縮量的合計量。接著，當壓下力ρ變大， 第1段彈簧23壓縮段差h，而使第2段加壓吸附具要件15 抵接於半導體晶片3 3時，該位移y2 ’固定為h不再變化。 此時’第2段彈簧25尚未壓縮達h2，第3段加壓吸附具 1345274 要件17，尚未抵接於半導體晶片33。 當第2段加壓吸附具要件15抵接，第1段彈簧23便 不再壓縮，因此如圖3 (a)所示第1段加壓吸附具要件13之 加壓面13a的加壓壓力固定為P^hxl^/A!。接著，隨著壓 下力F之增加’使第2段加壓吸附具要件15之加壓面i5a 之加壓壓力亦逐漸增加。另一方面，如圖3(b)所示，當第 2段加壓吸附具要件15抵接於半導體晶片33，壓下力F 所造成之第3段加壓吸附具要件1 7之加壓面1 7a的位移 ’係沿具有與第2段彈簧25之彈簧剛性l/k2成正比之斜 率的直線，與時間成正比地增加。 y3=F/k2+h1 = ( a /k2)xt+h! 式（3) 此係由於第1段彈簧23不再壓縮，第2段彈簧25僅 與其彈簧剛性l/ka成正比壓縮。接著，當第2段彈簧25 壓縮達段差h ’第3段加壓吸附具要件17抵接於半導體 晶片33時’該位移y3固定為（hi + h2)不再變化。 當第3段加壓吸附具要件丨7抵接，第2段彈簧25亦 與第1段彈簧23同樣地，不再壓縮，故如圖3(a)所示第2 段加壓吸附具要件1 5之加壓面1 5a的加壓壓力，固定為 P2 = (k2Xh2—kixhi)/A2。接著’隨著壓下力F之增加，使第 3奴加壓吸附具要件17之加壓面17a之加壓壓力亦逐漸增 加。並且，當第3段加壓吸附具要件17之加壓面17a之加 壓壓力達到既定壓力P3 = [F — + 時，音圈馬 達29之壓下力F為定值，保持既定之壓緊時間。 以上，雖說明音圈馬達29之壓下力F係與時間成正 15 1^4^2/4 f，使其成為F=axt來控制時之各部之位移、壓力之變化， 旦從上述說明可明瞭，各段加塵吸附具要件 :藉由變更其加座面積I A2, A3，各段彈簧之彈 ；； ^之組合，即可配合半導體晶片33之構造 '形 “如既可如Pl>I>2>P3使中央部較高，亦可如PfP^p 使其壓力均等°由於即使加壓壓力均等亦係從中央依序向3 :緣。P加壓半導體晶片33，故不必於局部施加大壓力亦能 效防止氣泡之產生，發揮不容易損傷半導體晶片33之 效果。但是，若使第2段彈簽25較第i段彈簧23強度過 弱（使h過小；>’或使第2段段差^過小，則會在第2段加 壓吸附具要件15抵㈣半導體晶片33以前第3段加壓吸 、、要件已先抵接;^半導體晶片33，因而產生不能以第2 段加壓吸附具要件15加愿半導體晶片Μ的狀況，故較佳 為將第2段彈簧25之彈簧常數h設定為較第！段彈簧之 彈簧常數k,大。 又，雖說明音圏馬達29之壓下力F係與時間成正比 增加，但亦可改為對時間變更其位移之控制。在此情形， 取初因當作第1段彈簧23與第2段彈簧25之串聯彈簧動 作，故加壓壓力之上升較緩慢，當第2段加壓吸附具抵接， 僅第2段彈簧25壓縮時，加壓壓力之上升則變快。此加 壓壓力之變化比率，能依所加壓之半導體晶片33之構造、 形狀來做各種選擇。 如上述本實施形態之多段加壓吸附具U，藉由變更各 段之加壓面積A。A;，各段彈簧之彈簧常數k"匕，段 16 1345274 差h之设足，能使加壓壓力對應所加壓之半導體晶片33 之構造、形狀，發揮有效防止半導體晶片33與電路基板31 間產生氣泡的效果。又，藉此能配合半導體晶片33之機 械強度變更加壓壓力，發揮不容易損傷半導體晶片33之 效果。 參照圖4至圖6 ’說明本發明之其他實施形態。圖4 係在圓柱狀第1段加壓吸附具要件丨3周圍組合圓筒狀第 2、第3段加壓吸附具要件丨5，丨7。本實施形態由於各加壓 吸附具要件之滑動面係圓筒面，除前述實施形態之效果 外，還有加工容易而能形成間隙更少之多段加壓吸附具i i 之效果。又，如圖5所示亦可在各加壓吸附具要件之角落 設置R部。此情形之效果係與上述相同。 又，如圖6所示，藉由以彈性體形成各加壓吸附具要 件13，15，17之加壓部13b，15b，17b，在中央部形成使加 壓面13a，15a，17a突出之形狀，進一步發揮藉由各加壓面 1 3 a，1 5a，1 7a將半導體晶片33與電路基板3 1間之氣泡擠 出至半導體晶片33外侧之效果。 圖7係表示其他實施形態之多段加壓吸附具11及其動 作。對與前述實施形態同樣之部分使用同樣符號，省略說 明。如圖7所示，多段加壓吸附具11，於配置在一端之長 方形柱第1段加壓吸附具要件13將第2段、第3段、第4 段之加壓吸附具要件1 5，17，19(加壓面係與第1段加壓吸 附具要件13同樣之長方形形狀且角型）之上下方向之滑動 面疊合成與加壓方向直角之方向（橫方向），在第1段加壓 17 1345274 吸附具要件13與第2段加壓吸附具要件15之角部間將第 1段彈簧23沿加壓方向朝縱方向夾住，同樣地在第2段加 壓吸附具要件1 5之角部與第3段加壓吸附具要件丨7之角 部間將第2段彈簧25沿加壓方向朝縱方向夾住，同樣地 在第3段加壓吸附具要件丨7之角部與第4段加壓吸附具 要件19之角部間將第3段彈簧2 7沿加壓方向朝縱方向夾 住。各加壓吸附具要件與彈簧，係依第1段加壓吸附具要 件13、第1段彈簧23、第2段加壓吸附具要件丨5、第2 段彈簧25、第3段加壓吸附具要件i7、第3段彈簧27、 第4段加壓吸附具要件19之順序沿加壓方向串聯組合， 在第4段加壓吸附具要件丨9之外側以各段之加壓吸附具 要件13，15，17，19能沿上下之加壓方向成為一體滑動之方 式，安裝有用以保持各加壓吸附具要件之導引件2 1。並且 在導引件21上部安裝有上下方向驅動用之音圈馬達29。 各段之加壓吸附具要件I3,丨5, 17, 19係鋼等金屬製而能耐 於重複之加壓動作，各加壓吸附具要件之橫方向間隙係各 加壓吸附具要件彼此朝縱方向能滑動之程度的微小間隙。 各段加壓吸附具要件13, 15, 17, 19之寬度係大致與半導體 晶片33之寬度同尺寸’全加壓吸附具要件之加壓面之集 合係大致與半導體晶片33之外形形狀尺寸相同。又，在 第1段加壓吸附具要件丨3與第2段加壓吸附具要件1 5之 間設有相當於第1段彈簧之壓縮量的段差hi，在第2段加 壓吸附具要件15與第3段加壓吸附具要件17之間設有相 當於第2段彈簀之墨縮量的段差，在第3段加壓吸附具 1345274 要件17與第4段加壓吸附具要件19之間設有相當於第3 段彈簧之壓縮量的段差h3。 如圖7(a)〜圖7(d)各俯視圖之斜線所示，當使音圈馬達 29向下移動，壓下多段加壓吸附具丨i來加壓半導體晶片 33，各段之彈簧23, 25, 27則被壓縮，從第i段加壓吸附 具要件13至第4段加壓吸附具要件19依序抵接於半導體 曰曰片33’使半導體晶片33從其一端向另一端加壓。藉由 如此構成，此使渗入半導體晶片3 3背面之晶片附著薄膜5 3 與電路基板31間之空氣朝一方向擠出而逐漸除去，並發 揮有效防止因空氣封入晶片附著薄膜53與電路基板3 i間 而產生氣泡的效果。又’藉由變更各段之加壓面積、各段 彈簧之彈簧常數、段差之設定’能進行對應各半導體晶片 3 3之开> 狀、構造的加壓，發揮能有效防止半導體晶片3 3 與電路基板31間之氣泡產生的效果。 在以上之本發明實施形態之說明，雖說明將晶片附著 薄膜53女裝於半導體晶片33背面（接合面）側之情形，但 在不以晶片附著薄膜53，而以配料器塗布之黏著劑黏貼半 導體晶片33時，亦能適用本發明。 【圖式簡單說明】 圖1係表示本發明實施形態之多段加壓吸附具的部分 剖面圖與各加壓吸附具要件的俯視圖。 圖2係本發明實施形態之多段加壓吸附具加壓動作的 說明圖。 圖3係於本發明實施形態之多段加壓吸附具加壓動 19 1345274 作’表示加上與時間成正比之壓下力時之各加壓吸附具之 位移與加壓壓力之關係的圖表。 圖4係本發明其他實施形態之吸附具的俯視圖。 圖5係本發明其他實施形態之吸附具的俯視圖。 圖ό係本發明其他實施形態之吸附具前端部的剖面 圖。 圖7係於本發明其他實施形態之多段加壓吸附具加壓 動作的說明圖。 圖8係表示習知技術之吸附具動作的剖面圖。 【主要元件符號說明】 11 多 段加壓 吸 附 具 13 第 1段加 壓 吸 附 具要件 15 第 2段加 壓 吸 附 具要件 17 第 3段加 壓 吸 附 具要件 19 第 4段加 壓 吸 附 具要件 13b，15b，17b 加壓部 13a，15a，17a，19a 加壓面 21 導 引 件 23 第 1 段彈 簧 25 第 2 段彈 簧 27 第 3 段彈 簧 29 音 圈 馬達 31 電 路基板 32 構裝 面 20 1345274 33 半 導 體晶 片 35 吸 附 孔 37, 39, 41 中 心 軸 51 吸 附 具 53 晶 片 附著 薄膜 55 加 壓 部 57 加 壓 面 59 加 熱 機構 A丨， 八2，A3 加 壓 面積 F 壓 下 力 h丨， h2 段 差 k卜 k2 彈 簧 常數 Ρ», P2，P3 加 壓 壓力 t 時 間 yi， y2, y3 位 移 21As shown in Fig. 2(d), when the compression of the second-stage spring 25 reaches h2 with the downward movement of the voice coil motor 29, the pressing surface 15a of the second-stage pressurized adsorber element 15 in the initial state is The step difference h2 between the pressing faces 1 7a of the third stage pressurizing adsorbing element 17 disappears, and the third stage pressurizing means member abuts against the semiconductor wafer 33. Therefore, as shown by the oblique line in the top view of FIG. 2(d), except for the first stage pressurized adsorber element 13 and the second stage pressurized adsorber element 15, the third stage pressurized adsorbing element 17 abuts. The area of the semiconductor wafer 33 is also pressurized. Further, since the third stage pressurizing tool element 17 abuts on the semiconductor wafer 33, the second stage spring 25 is not compressed as in the first stage spring 23, so the second stage pressurizing means is used. The pressing pressure of the portion where the pressing surface 15a of the element i 5 is pressurized does not change with the downward movement of the voice coil motor 29. On the other hand, the region pressurized by the pressing surface 17a of the third-stage pressurized adsorber member 17 gradually increases the pressing pressure as the voice coil motor 29 moves downward. Then, when the pressing pressure of the kneading surface 17a of the third-stage pressurized adsorbing tool member 17 reaches a predetermined pressure, the voice coil motor is stopped to move downward, and then the multi-stage pressure adsorbing device U is driven by the driving mechanism of the wafer bonding device. Leaving the face of the semiconductor wafer 33. As described above, since the multi-stage pressure adsorption*u initially pressurizes the central portion of the semiconductor wafer 33' and then sequentially enlarges the pressurizing region to the peripheral edge, the wafer-attached film 53 that penetrates the back surface of the semiconductor wafer 33 and the circuit substrate 31 can be interposed. The air is sequentially extruded from the center to the peripheral portion, thereby effectively preventing the air bubble from being formed between the wafer-attached film 53 and the circuit board η, thereby causing the bubble generation 12 1345274. Further, since it is not necessary to apply a large pressure locally, the generation of bubbles can be effectively prevented, so that the effect of not easily damaging the semiconductor wafer 3 3 can be exhibited. The pressure of the pressurized semiconductor wafer 33 can be changed by changing the combined spring rigidity or the shape of each of the adsorption member requirements. Thereby, the effect of changing the pressing pressure in accordance with the mechanical strength of the semiconductor wafer 33 is exhibited. Hereinafter, with reference to Fig. 3, as an example, the voice coil motor 29 increases the pressing force F of the third-stage pressurized adsorber member 17 in proportion to the time t to increase the details of the operation of each portion during pressurization. Figure 3 (a) shows the change of the pressing force F of the third-stage adsorbing tool element 17 and the pressing pressures P2, P3 generated by the pressure-receiving elements of each section, and Figure 3(b) shows When the pressing force F is applied, the pressure surfaces na, 15&, 17& of each of the pressure-adsorbing elements are displaced from each initial position by yi, yz, y3. Further, in the following description, it is assumed that the pressing surface area of each of the pressurized suction tool elements is Αι, 八2, A; and the spring constant of each segment spring is kl, k2. As shown in Fig. 3(a), the third stage suction tool element 17 is pressed by the voice coil motor 29 with a pressing force F == axt (a constant) proportional to time. As shown in Fig. 3 (the one-point chain of the magic point, the pressing force F is 〇 when the time t=〇. And when the pressure-adsorbing elements 13, 15, 17 of the whole section are at a predetermined pressing pressure p" p2 When p3 pressurizes the state of the semiconductor wafer 33, that is, F=PiXAi+p2xA2+p3x a3, during which the pressing force F increases linearly in proportion to the time t. When the voice coil motor 29 pressurizes the first stage When the pressing operation is started in the state in which the element i 3 abuts on the semiconductor wafer 33, the positions of the pressing faces 13a, 15a, 17a of the respective segments 13 1345274 as shown in the item (10) start to change. The pressing surface 13a of the component 13 has abutted on the semiconductor wafer 33, so that the displacement thereof is fixed at 0. On the other hand, the pressing surface 15a of the second-stage pressurized adsorbing element 15 and the third-stage pressurized adsorbing element are required. The pressurizing surface 17a of the 17 is gradually displaced downward by the pressing force F to compress the springs 23, 25. During the second stage of the pressurization of the adsorbent element in contact with the semiconductor wafer 33, the first segment spring 23, The two-stage spring 25 is compressed by the pressing force f. The displacement y2 of the pressing surface 15a of the second-stage pressurized adsorbing tool element 15 has a relationship with the first The spring of the spring 23 is a straight line proportional to the slope of the heart, which increases in proportion to the time. yfF/ki = ( a /kjxt (1) and the pressure section 17a of the third stage pressurized adsorber element 17 The displacement y3, the line has a line with the spring stiffness of the first-stage spring 23 and the second-stage spring in series (k ** + ^ / (r^xkO proportional to the slope, increasing in proportion to time. y3 = Fx ( k!+ k2)/(k!xk2) = [(α x(k!+ k2)/(k,xk2)]xt (2) As shown in Fig. 3(b), the third stage pressure adsorption tool The displacement y3 of the pressing surface 17a of the request member 17 is the displacement y 2 of the pressing surface 15 a of the second-stage pressurized adsorbing tool element 15 caused by the compression of the first stage magazine 23, and the second line indicated by the broken line. The total amount of compression of the segment springs 25. Then, when the pressing force ρ is increased, the first-stage spring 23 compresses the step difference h, and when the second-stage pressurized adsorber element 15 abuts on the semiconductor wafer 3 3, The displacement y2 'fixed to h no longer changes. At this time, the second stage spring 25 has not been compressed up to h2, and the third stage pressure absorbing material 1345274 is not yet abutted on the semiconductor wafer 33. When the element 15 abuts, the first stage spring 23 is no longer compressed. Therefore, as shown in Fig. 3 (a), the pressing pressure of the pressing surface 13a of the first-stage pressurized adsorbing tool member 13 is fixed to P^hxl^/A!. Then, as the pressing force F increases, The pressing pressure of the pressing surface i5a of the two-stage pressurized adsorbing tool member 15 is also gradually increased. On the other hand, as shown in Fig. 3(b), when the second-stage pressurized adsorbing tool member 15 abuts on the semiconductor wafer 33 The displacement of the pressing surface 1 7a of the third stage of the pressure-adsorbing tool element 7 caused by the pressing force F is a straight line having a slope proportional to the spring rigidity l/k2 of the second-stage spring 25, and Time increases in proportion. Y3=F/k2+h1 = ( a /k2)xt+h! (3) Since the first-stage spring 23 is no longer compressed, the second-stage spring 25 is compressed only in proportion to its spring rigidity l/ka. Next, when the second-stage spring 25 is compressed to the step difference h', the third-stage pressurized adsorber element 17 abuts on the semiconductor wafer 33. The displacement y3 is fixed so that (hi + h2) is no longer changed. When the third stage pressure-adsorbing tool element 丨7 abuts, the second-stage spring 25 is also not compressed as in the first-stage spring 23, so the second-stage pressure-adsorbing tool element is shown in Fig. 3(a). The pressing pressure of the pressing surface 1 5a of 15 is fixed to P2 = (k2Xh2 - kixhi) / A2. Then, as the pressing force F increases, the pressing pressure of the pressing surface 17a of the third slave pressurizing tool member 17 is gradually increased. Further, when the pressing pressure of the pressing surface 17a of the third-stage pressurized adsorbing tool member 17 reaches the predetermined pressure P3 = [F - +, the pressing force F of the voice coil motor 29 is constant, and the predetermined pressing is maintained. time. As described above, the pressing force F of the voice coil motor 29 is set to be 15 1^4^2/4 f with time, so that the displacement and pressure of each part when F=axt is controlled can be changed from the above description. It is clear that each section of the dust adsorption device requires: by changing the seating area I A2, A3, the spring of each segment of the spring;; ^, the combination can be matched with the structure of the semiconductor wafer 33 as "like Pl"; I>2>P3 makes the central portion higher, and the pressure can be equalized as PfP^p. Since even the pressing pressure is equal, the semiconductor wafer 33 is pressed from the center to the third edge. The application of a large pressure is also effective in preventing the generation of bubbles, and the effect of not easily damaging the semiconductor wafer 33 is exerted. However, if the second-stage spring 25 is weaker than the i-th spring 23 (h is too small; > If the difference between the two sections is too small, the second stage of the pressure-adsorbing tool element 15 will be pressed against the fourth stage of the semiconductor wafer 33, and the element will be abutted first; the semiconductor wafer 33 will not be produced in the second stage. The pressure-adsorbing tool element 15 is a condition of the semiconductor wafer defect, so it is preferable to use the spring of the second-stage spring 25 The number h is set to be larger than the spring constant k of the first segment spring. Note that although the pressing force F of the hammer motor 29 is proportional to the time, it may be changed to control the displacement of the time. In this case, since the first spring is operated as the series spring of the first-stage spring 23 and the second-stage spring 25, the increase in the pressurizing pressure is slow, and when the second-stage pressurized adsorber abuts, only the second-stage spring 25 When the compression is performed, the increase in the pressurizing pressure is increased. The ratio of the change in the pressurizing pressure can be variously selected depending on the structure and shape of the pressed semiconductor wafer 33. The multistage pressurized adsorbent U of the present embodiment described above By changing the pressing area A of each segment A. A; the spring constant k" of each segment spring, the difference of the segment 16 1345274 is sufficient to make the pressing pressure correspond to the structure of the pressed semiconductor wafer 33, The shape is effective in preventing the occurrence of air bubbles between the semiconductor wafer 33 and the circuit board 31. Further, the pressurization pressure can be changed in accordance with the mechanical strength of the semiconductor wafer 33, and the effect of not easily damaging the semiconductor wafer 33 can be exhibited. 6 ' illustrates the invention Other Embodiments Fig. 4 is a combination of a cylindrical second and third stage pressure-adsorbing tool element 丨5, 丨7 around a cylindrical first-stage pressure-adsorbing tool element 丨3. This embodiment is subjected to pressure adsorption. The sliding surface of the element has a cylindrical surface, and in addition to the effects of the above-described embodiments, there is also an effect of facilitating the formation of a plurality of pressurized suction tools ii having a small gap. Further, as shown in FIG. The R portion is provided at a corner of the pressure-receiving member. The effect in this case is the same as described above. Further, as shown in Fig. 6, the pressing portion 13b of each of the pressure-adsorbing tool elements 13, 15, 17 is formed by an elastic body, 15b, 17b, in the central portion, a shape in which the pressing faces 13a, 15a, 17a are protruded is formed, and bubbles between the semiconductor wafer 33 and the circuit substrate 31 are further exerted by the respective pressing faces 1 3 a, 15a, 17a. The effect of extrusion onto the outside of the semiconductor wafer 33. Fig. 7 is a view showing a multistage pressurized suction tool 11 of another embodiment and its operation. The same portions as those of the above-described embodiments are denoted by the same reference numerals and will not be described. As shown in Fig. 7, the multi-stage pressure-adsorbing device 11 has a rectangular column at one end, a first-stage pressure-adsorbing tool element 13, and a pressure-adsorbing device element 15 of the second, third, and fourth stages. 17,19 (the pressure surface is the same as the first-stage pressure-adsorbing tool element 13 in the same rectangular shape and angular shape). The sliding surface in the upper and lower directions is superposed in the direction perpendicular to the pressing direction (horizontal direction), in the first stage. Pressurization 17 1345274 The first stage spring 23 is sandwiched in the longitudinal direction between the corners of the suction tool element 13 and the second stage pressure-adsorbing tool element 15 in the same direction, and the second stage pressure-adsorbing tool element 1 is similarly Between the corners of the fifth corner and the third section of the pressure-adsorbing tool element 丨7, the second-stage spring 25 is clamped in the longitudinal direction in the direction of the pressurization, and likewise in the corner of the third-stage pressurized adsorbent element 丨7 The third segment spring 27 is sandwiched in the longitudinal direction between the corner portions of the fourth stage pressurized suction tool element 19 in the pressing direction. Each of the pressure-adsorbing tool elements and springs is based on the first stage of the pressure-adsorbing tool element 13, the first-stage spring 23, the second-stage pressure-adsorbing tool element 丨5, the second-stage spring 25, and the third-stage pressure adsorption. The sequence of the element i7, the third stage spring 27, and the fourth stage pressure adsorbing element 19 are combined in series in the pressurizing direction, and the pressure adsorbing element of each section is pressed on the outer side of the fourth stage of the pressurizing adsorbing element 丨9 13, 15, 17, 19 can be integrally slid in the pressurizing direction of the upper and lower sides, and a guide member 21 for holding the respective pressure absorbing members is mounted. Further, a voice coil motor 29 for driving in the vertical direction is attached to the upper portion of the guide member 21. Each section of the pressure-adsorbing tool is made of metal such as I3, 丨5, 17, 19-series steel, and can withstand repeated pressurization operations. The lateral direction gap of each pressure-adsorbing tool element is perpendicular to each other. A small gap in the extent to which the direction can slide. The width of each of the pressurized adsorbent elements 13, 15, 17, 19 is substantially the same as the width of the semiconductor wafer 33. The collection of the pressing surfaces of the full-pressure adsorbent element is substantially the same as the outer shape of the semiconductor wafer 33. . Further, a step difference hi corresponding to the compression amount of the first stage spring is provided between the first stage pressurized adsorbing tool element 丨3 and the second stage pressure adsorbing element requirement 15, and the second stage pressurized adsorbing element is provided in the second stage. 15 and the third stage of the pressure-adsorbing tool element 17 are provided with a step corresponding to the amount of ink shrinkage of the second stage magazine, and in the third stage, the pressure-adsorbing tool 1345274 element 17 and the fourth stage pressure-adsorbing element are 19 A step h3 corresponding to the amount of compression of the third stage spring is provided between them. As shown by the oblique lines in the plan views of Figs. 7(a) to 7(d), when the voice coil motor 29 is moved downward, the plurality of pressure adsorbing members 丨i are pressed to pressurize the semiconductor wafer 33, and the springs 23 of the respective segments are pressed. 25, 27 is compressed, from the i-stage pressurized adsorber element 13 to the fourth-stage pressurized adsorber element 19 sequentially abuts the semiconductor die 33' to increase the semiconductor wafer 33 from one end to the other end Pressure. With this configuration, the air which is infiltrated between the wafer-attaching film 5 3 on the back surface of the semiconductor wafer 3 and the circuit board 31 is gradually removed in one direction, and is effectively prevented from being sealed by the air-attached wafer-attached film 53 and the circuit board 3 i. The effect of creating bubbles between them. In addition, by changing the pressing area of each stage, the spring constant of each stage spring, and the setting of the step difference, it is possible to perform pressurization corresponding to the opening and the shape of each semiconductor wafer 3, and it is possible to effectively prevent the semiconductor wafer 3 3 . The effect of the bubble generated between the circuit board 31 and the circuit board 31. In the above description of the embodiment of the present invention, the case where the wafer-attached film 53 is applied to the back surface (joining surface) side of the semiconductor wafer 33 is described. However, the adhesive film is applied by the dispenser without adhering the film 53 to the wafer. The present invention is also applicable to the semiconductor wafer 33. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a partial cross-sectional view showing a multi-stage pressurized suction tool according to an embodiment of the present invention, and a plan view of the components of each pressure-adsorbing device. Fig. 2 is an explanatory view showing a pressurizing operation of a multi-stage pressurized suction tool according to an embodiment of the present invention. Fig. 3 is a graph showing the relationship between the displacement of each of the pressurizing adsorbing devices and the pressurizing pressure when the pressing force is proportional to the pressing force of the multistage pressurizing device according to the embodiment of the present invention. Fig. 4 is a plan view showing an adsorption tool according to another embodiment of the present invention. Fig. 5 is a plan view showing an adsorption tool according to another embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a distal end portion of an adsorbent according to another embodiment of the present invention. Fig. 7 is an explanatory view showing a pressurizing operation of a multistage pressurized suction press according to another embodiment of the present invention. Fig. 8 is a cross-sectional view showing the operation of the conventional applicator. [Description of main component symbols] 11 Multi-stage pressure adsorption tool 13 First stage pressure adsorption tool element 15 Second stage pressure adsorption tool element 17 Third stage pressure adsorption tool element 19 The fourth stage pressure adsorption tool element 13b, 15b, 17b Pressurizing parts 13a, 15a, 17a, 19a Pressing surface 21 Guide member 23 First stage spring 25 Second stage spring 27 Third stage spring 29 Voice coil motor 31 Circuit board 32 Mounting surface 20 1345274 33 Semiconductor Wafer 35 Adsorption hole 37, 39, 41 Central axis 51 Adsorption tool 53 Wafer-attached film 55 Pressurized portion 57 Pressurized surface 59 Heating mechanism A丨, 八2, A3 Pressurized area F Pressing force h丨, h2 Step difference k K2 spring constant Ρ», P2, P3 pressurization pressure t time yi, y2, y3 displacement 21