JP5018455B2 - Semiconductor device manufacturing apparatus and semiconductor device manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To materialize a device for manufacturing a semiconductor device, which can effectively suppress the generation of voids in a resin layer. <P>SOLUTION: In the device for manufacturing the semiconductor device, especially when filling of an underfill material resin composition layer 3 is implemented using a membranous film, the pressing tool head 6 of a flip chip bonder forming the semiconductor manufacturing device is divided into a plurality of regions. Since those regions can be pressed with the sequences such as pressure, pressing timing, made mutually independent, the occurrence of voids can be substantially suppressed. <P>COPYRIGHT: (C)2009,JPO&amp;INPIT

Description

  The present invention particularly relates to a manufacturing apparatus for manufacturing a semiconductor device such as a flip-chip mounted BGA (ball grid array), that is, a bump electrode formed on a semiconductor element and a connection electrode on a wiring board. The present invention relates to a manufacturing apparatus typified by a flip chip bonder and the like, and in particular, a semiconductor device having a pressure tool head mechanism suitable for making a connection with an underfill layer filled between a semiconductor element and a wiring board. It relates to a manufacturing apparatus.

  Flip chip mounting for manufacturing a semiconductor device having a mounting format such as BGA has recently become an important manufacturing means in high-density mounting semiconductor devices such as CPUs because of the possibility of high-density mounting.

  In flip chip mounting, a semiconductor element on which a protruding electrode made of a solder bump or the like is formed is pressure bonded to a semiconductor element mounting wiring board by a manufacturing apparatus such as a flip chip bonder. At that time, the gap between the semiconductor element and the wiring board is filled with an underfill resin layer, eliminating contact between bump electrodes after bonding, ensuring insulation, and strengthening bonding strength between parts to be bonded. Etc.

  The underfill resin layer (the underfill resin here refers to an underfill resin composition comprising a main resin for thermosetting underfill, the same resin curing agent, a curing accelerator, an inorganic material filler, etc.) Various methods have been conventionally used for the filling method. For example, after bonding the protruding electrode and the wiring board, filling the gap between the two so as to inject a low-viscosity underfill resin, solidifying the resin using the thermosetting property of the resin, and forming the underfill resin layer, Conversely, a method of forming an underfill resin layer by dripping and applying a low-viscosity underfill resin on one surface before bonding the semiconductor element and the wiring board, and then bonding the two together and then heating and solidifying. Is also used.

  However, these liquid resin filling methods, especially in high-density flip chip mounting where the gap between the parts to be joined is increasingly narrow and the number of joints is large, the viscosity of the liquid resin, injection and coating conditions, etc. It is not easy to suppress the generation of voids in the formed resin layer by controlling the above, and it is difficult to form a highly reliable BGA mounting element. In particular, in the method by injection into the gap, if the gap is small, filling by capillary action (capillary flow) becomes more difficult.

  As a method for shortening the takt time and increasing the reliability of the filling process of the underfill resin, a low-viscosity underfill resin is dropped and applied to the surface of one element, for example, a semiconductor element, and then the resin is once dried. For example, a method of forming a solid film-like underfill resin layer including solder bumps and then joining to the other person, that is, a wiring board by heating and pressure bonding, or separately forming a solid film shape of the underfill resin A method has been proposed in which a device is prepared, attached to the semiconductor element side or the wiring substrate side, and then bonded by heating and pressure bonding (for example, Patent Document 1).

In particular, the latter method in which the film-like underfill resin film formed separately is attached to the chip in the first half of the previous period can reliably prevent the underfill resin from being unfilled between the chip and the substrate, and the control of the resin layer thickness Control of the total amount of resin is relatively easy, and the amount of protrusion of the resin from the chip edge after bonding can be controlled.
Japanese Patent No. 3558576

  The inventor relates to a method of applying the underfill resin layer once dried and solidified before the flip-flop connection between the semiconductor element and the wiring board, and to suppress the generation of voids and to provide a more reliable BGA semiconductor. We examined for the purpose of device formation.

  First, liquid underfill resin is dropped on one surface, that is, the surface on which the bump electrode of the semiconductor element is formed, and the resin is sufficiently spread over the entire bump mounting surface, and then the solvent is once evaporated. The underfill resin layer containing the protruding electrode was formed by drying as described above. However, the phenomenon of film thickness reduction in the underfill resin layer after drying, that is, the phenomenon of unevenness observed remarkably on the resin surface could not be suppressed. Naturally, if the flip-chip connection is continued using the underfill resin layer in this state, voids existing in the concavo-convex portions are caught in the resin, and the underfill resin is melted and heated and solidified in the resin layer. Many voids resulting from the previous voids are inherent.

  Thus, a method of separately forming a solid (under the solvent evaporated) film-like underfill resin film (underfill material resin composition film) and affixing it to the bump electrode formation surface of the semiconductor element was tried. . Specifically, first, a liquid (low viscosity) underfill resin material is applied on the surface of the base material as smooth as possible, for example, on a PET film having a predetermined thickness or on a polished substrate surface (Si substrate polished surface, glass surface, etc.). Apply coating or planarization and dry enough to remove solvent. Thus, a dried underfill material resin composition film having a predetermined film thickness is formed on the surface of the base material. Next, the film forming surface on the surface of the base material and the bump mounting surface of the semiconductor element are pressed and adhered to each other, and the base material is removed so as to leave the formed dry underfill resin layer film on the semiconductor element. Thus, it was found that the surface of the underfill resin layer adhered and formed on the bump mounting surface can be formed in a state in which the unevenness is greatly improved as compared with the surface of the previous dripping / drying layer.

  Flip chip bonding using a film-like underfill material resin composition layer having a flat surface formed in this way was actually carried out, but in this case as well, there is a problem that voids are generated in the resin layer. Occurred.

  FIG. 6 is a schematic cross-sectional view of a connection process between a semiconductor element and a connection substrate using a typical conventional flip-chip connection method. As shown in FIG. 6 (1), a protruding electrode connecting semiconductor element having a protruding electrode 102 such as a solder bump formed on an electrode of a semiconductor element 101 such as a chip is prepared. As shown, a film-like underfill material resin composition film is attached to the protruding electrode 102 by the method described above, and the underfill material resin composition layer 103 having the shape in which the protruding electrode 102 is taken in is formed.

  Alternatively, in forming the underfill material resin composition layer 103, for example, the viscosity of the underfill material resin composition film is once lowered at a temperature lower than the melting point of the solder bump (for example, 50 to 80 ° C.), The underfill material resin composition layer 103 may be formed in such a manner that the protruding electrodes 101 are more effectively taken in by being melted and adhered to the semiconductor element surface including the protruding electrodes 102.

  Then, as shown in FIG. 6 (3), a flip chip bonder is added to connect the connecting electrode 105 formed on the wiring substrate 104 so as to face the position of the protruding electrode 102 and the protruding electrode 102. A bump connecting semiconductor element in which an underfill material resin composition layer 103 attached by suction or the like is formed on a pressure tool head (bonder head) 106 is subjected to a solder ball melting temperature (for example, 230 to 250 ° C.). Then, the underfill material resin composition layer 103 is melted, and pressure 107 is applied by the pressure tool head 106 to realize electrical connection between the electrodes. As described above, the underfill material resin composition layer 103 is kept in a molten state at the time of connection processing, and after the connection, the temperature is equal to or lower than the melting point of the solder and the thermosetting property is established (for example, 170 ° C.). , And heat treatment time is 2 hours).

  The subject of said method is demonstrated with the process sectional drawing and its enlarged view of FIG. As shown in FIG. 7A, the pressing tool head 106 of the flip chip bonder normally has a mechanism for pressing 107 the entire back surface of the semiconductor element 101 with a constant strength. The entire area and the entire area of the protruding electrode 102 are normally contacted and pressed almost simultaneously. As shown in the enlarged view of the main part of FIG. 7 (2), the underfill material resin composition layer 103 has a surface with minute irregularities even with the resin layer formed by the improved method. The surface of the wiring substrate 104 having the connection electrode 105 is in close contact with the fine protrusion. When heated and pressure-bonded from such an adhesion start state, the underfill material resin composition layer 103 is bitten between the surface of the underfill material resin composition layer of the semiconductor element 101 and the surface of the wiring substrate 104 until the underfill material resin composition layer 103 is softened. After the underfill material resin composition is solidified, a phenomenon in which the voids remain as voids 108 on the surface side of the wiring board 104 occurs as an observation situation.

  In addition, on the foot side of the protruding electrode of the semiconductor element 101, usually no void is observed. This may occur between the projecting electrode 102 and the semiconductor element 101 in the process of forming the underfill material resin composition layer 102 by pasting and melting the film-like underfill material resin composition on the projecting electrode 102 side. It is considered that no vacant space is involved.

  The generation of the void 108 causes a decrease in the contact area between a semiconductor element such as a chip and a wiring board in a semiconductor device manufactured as a BGA or the like, thereby causing, for example, a decrease in bonding strength. When mounting on a circuit board or the like, if a manufacturing process is performed in the vicinity of the solder melting temperature, short-circuit defects are likely to occur between adjacent bumps (projection electrodes).

  Therefore, the problem of the present invention is that when the bump electrode of the semiconductor element and the connection electrode of the wiring board are connected by filling the gap between the semiconductor element and the wiring board with the underfill material resin composition layer, An object of the present invention is to provide a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method capable of effectively suppressing the generation of voids.

The semiconductor device manufacturing apparatus of the present invention comprises:
A semiconductor device manufacturing apparatus for flip-chip mounting a semiconductor element on a wiring board,
A pressing means for pressing the semiconductor element from the semiconductor element side against the wiring board side in contact with the back surface of the semiconductor element on which no protruding electrode is formed;
The pressurizing unit pressurizes a first pressurizing unit that presses a part of the first region on the back surface, and pressurizes a second region different from the first region, and is independent of the first pressurizing unit. And a second pressurizing part that can be controlled.

Also,
The second region is a region surrounding the first region.

Also,
The pressurizing strength of the first pressurizing unit is larger than the pressurizing strength of the second pressurizing unit.

Also,
The pressure start time of the first pressurizing unit is applied at a time earlier than the second pressure start time.

A method for manufacturing a semiconductor device of the present invention includes:
A method for manufacturing a semiconductor device in which a semiconductor element is flip-chip mounted on a wiring board using a semiconductor device manufacturing apparatus,
The semiconductor device manufacturing apparatus comprises:
The semiconductor device has a pressurizing unit that contacts the back surface of the semiconductor element on which the protruding electrode is not formed and pressurizes the semiconductor substrate side against the wiring substrate side, and the pressurizing unit is a part of the back surface A first pressurizing unit that pressurizes the first region; and a second pressurizing unit that pressurizes a second region different from the first region and can be controlled independently of the first pressurizing unit. It is characterized by providing.

  When the bump electrode of the semiconductor element and the connection electrode of the wiring board are filled with the underfill material resin composition layer between the semiconductor element and the wiring board and are subjected to flip chip bonding, particularly as the underfill material resin composition layer Even when the film is formed using the above-mentioned film, the pressure tool head of the flip chip bonder is divided into a plurality of pressure regions, and the sequences of pressure and pressure timing are independent from each other. Therefore, the generation of voids in the underfill resin layer of a semiconductor device such as a bonded BGA can be caused to be greatly caused as compared with the conventional method.

  This can be expected to have a great effect also in the sense of preventing the increase in voids generated in the underfill material resin composition layer as the area of the semiconductor chip increases in the future.

  Embodiments of the present invention will be described below with reference to the accompanying drawings.

(Example)
FIG. 1 is a schematic cross-sectional view of the main part of the manufacturing apparatus of this embodiment. FIG. 1A is a cross-sectional view of the pressurizing tool head 6 of a flip chip bonder, for example, as seen from the front side along the pressurizing direction, and pressure is applied in a direction perpendicular to the paper surface of this figure. Applied. FIG. 1B is a cross-sectional view of the pressing tool head 6 taken along line XX ′ in FIG. 1A, and pressure is applied in the direction indicated by the arrow Z in FIG. As shown in this figure, the pressurizing region of the pressurizing tool head 6 has substantially the same size as the back surface of the semiconductor element 1 (the flat surface on the side where the protruding electrodes 2 are not formed). In addition, the central part of the back surface and the outer peripheral part surrounding it can be independently adjusted for the pressure intensity and the pressure timing (pressure order and start time of each pressure part, etc.) It has a two-region structure separated into a central region pressurizing unit 6-1 and an outer peripheral region pressurizing unit 6-2.

  As shown in FIG. 1B, the semiconductor element 1 is attached to the pressure tool head 6 by a suction mechanism (not shown). A plurality of protruding electrodes 2 are formed on one surface of the semiconductor element 1, and further, for example, a film-like thermosetting underfill material resin composition is attached thereon so as to cover the protruding electrodes 2. Then, the underfill material resin composition layer 3 solidified by heating is formed. On the other hand, a wiring board 4 is arranged on a stage (not shown), and a plurality of wiring electrodes 5 are formed on the wiring board 4 so as to face the protruding electrodes 2. In a situation where heating means such as an electric heater (not shown) can be used at the same time, flip chip bonding is performed by pressurizing the pressurizing tool head 6 in the arrangement configuration of these semiconductor elements and the wiring board.

Hereinafter, specific experimental examples conducted for verifying the method of the present invention will be described.
(1) Production of semiconductor chip with protruding electrodes;
On a semiconductor chip made of a TEG (Test Element Group) chip for evaluation of 15 mm × 15 mm Si, bump electrodes with a diameter of 100 μm, a height of 90 μm, and a material Sn-3Ag-0.5Cu are arranged in a total of 3,364 at a pitch of 250 μm. Individually formed.
(2) Wiring board;
A connection electrode of 100 μmφ of Au—Ni—Cu layer is formed in the center of a 35 mm × 35 mm resin build-up substrate within a chip size of 15 mm × 15 mm in the same position at a pitch of 250 μm at the position facing the protruding electrode. did.
(3) Production of film-like underfill material resin composition;
The following were mixed to make an underfill material.

・ Main agent: Bisphenol F type epoxy (EXA830LVP, Dainippon Ink);
100 wt.-Curing agent: phenolic curing agent (EP601, Asahi Denka Kogyo); 50 wt.-Curing accelerator: aliphatic polyamine (BUR439, Asahi Denka Kogyo); 10 wt.-Silica filler: spherical silica (So-E5 Ad. 30 weight ・ Solvent; ethanol First weigh the main agent, weigh out and add silica filler, mix by roll mill, add ethanol mixture of curing agent and curing accelerator, and use rotary kneading defoamer And mixed for 2 minutes at 1500 rpm.

Then, it is applied on a PET film having a thickness of 50 μm by a coating machine (control coater) so as to have a coating thickness of 120 μm, and dried in a constant temperature bath at 50 ° C. to produce a film-like underfill material resin composition. did. The film thickness after drying was about 100 μm.
(4) Adhering the film-like underfill material resin composition onto the semiconductor chip with protruding electrodes;
Place the prepared PET film on which the film-like underfill material resin composition is formed on an aluminum plate, and let it stand with the bump surface of the previously produced semiconductor chip with bump electrodes facing down. After applying silicone rubber, pressurize with a vacuum press. As a result, the film-like underfill material resin composition adheres to the chip side, and then the PET film is peeled off, whereby the resin composition layer is transferred to the chip side.
(5) Flip chip bonding;
Flip chip bonding was performed between the semiconductor chip formed with the underfill resin composition layer and the wiring substrate formed with a connection electrode. After thermocompression bonding with a bonder, the resin was cured at a predetermined temperature to obtain a finished sample. The number of voids in the sample was observed using SAT (Scanning Acoustic Tomography, ultrasonic imaging apparatus).

  In the used flip chip bonder, as shown in FIG. 1, the pressurizing region of the pressurizing tool head 6 has a divided structure of a central region pressurizing unit 6-1 and an outer peripheral region pressurizing unit 6-2. The outermost circumference is 15 mm × 15 mm, which is the same size as the chip, the central area pressurizing part 6-1 is 5 mm × 5 mm, and the outer circumference 5 mm width is the outer peripheral area pressurizing part 6-2.

  Separately, as a comparative example, a non-split pressure tool head in a single pressure region similar to a conventional bonder head (pressure tool head) was prepared, and flip chip bonding was performed using the same bonded sample.

In the above bonding, the head temperature is a maximum of 250 ° C. when using any type of head, and 150 ° C. for 2 hours for curing the underfill material resin composition layer after bonding. Heat treatment is performed.
(6) Joining result;
In a comparative example sample using a non-split type pressure tool head having a single pressure region, the applied pressure in the head was 10 kg. As a result, approximately 13 to 16 voids were observed per one bonded sample. The size of the generated void was about 200 μm to about several tens of μm in diameter.

  On the other hand, in the divided head system of the present invention, first, the head is lowered to bring the semiconductor element and the wiring board into contact with each other, and as the first pressurization, 10 kg is applied to the central area pressurization section and 7 kg is applied to the outer peripheral area pressurization section. Set to. That is, in this case, the simultaneous pressurization was performed as a setting such that the pressurization value in the central region is higher than the pressurization value in the peripheral region as the first heating. Thereafter, in this state, the outer peripheral area pressurizing part was pressurized to 10 kg and joined. As a result, in the method of the present invention, generation of a maximum of three voids was confirmed. In other words, it was found that it can be greatly reduced by more than 1/6. The size of the void was about a few tens of μm and a relatively small diameter.

  Further, a pressurizing sequence different from the above was performed using the divided head system of the present embodiment. The situation is shown by the schematic sectional view of FIG.

  That is, as shown in FIG. 2 (1), first, after the pressing tool head 6 is lowered to bring the semiconductor element 1 and the wiring board 4 close to each other, as shown in FIG. A pressure A of 10 kg was applied only to -1. Next, in a state where the central region is in pressure contact, as shown in FIG. 2 (3), 7 kg and 10 kg and pressurization B are increased and pressure-bonded to the outer peripheral region pressurizing unit 6-2. That is, in this case, the central region is first pressurized and pressure-bonded, then the outer peripheral portion is first pressurized at a lower pressure, and pressurization B is performed at a higher pressure. As a result of joining with the split-type head of the present invention by such a pressurizing sequence, the generated void size is small and the number of generated is about 2 at the maximum as compared with the conventional method. It was found that it decreased significantly.

  As described above, the generation of voids can be significantly reduced in the divided head system of the present embodiment compared to the conventional integrated head system. The reason is considered as follows. That is, at the time when the surface of the underfill material resin composition layer 3 having the protruding electrode 2 (having a minute uneven surface) comes into contact with the wiring substrate 5 on which the slightly protruding wiring electrode 5 is provided. There is a high possibility that a minute gap 7 is caught between the two, and when this is pressed and solidified with an integrated head as it is, it becomes voided and remains. However, if the pressurization value in the central area is increased as shown in FIG. 2 (1), or the pressurization (pressurization A) is performed so that the central area comes into contact first as shown in FIG. The void 7 existing inside is pushed out into the outer peripheral region. Thereafter, when the pressure B is applied to the outer peripheral region while keeping the central region in contact as shown in FIG. 2 (3), the gap 7 including the one existing in the peripheral portion is excluded from the outside of the bonding region. Conceivable.

The above is an example, and bonding is not limited to the head dividing method shown in FIG. 1 in order to perform bonding so that a gap that is involved when the semiconductor element and the wiring board are brought into contact with each other is easily excluded to the external region. Needless to say, the pressure sequence is not limited to the above. For example, if the first contact point between the semiconductor element and the wiring board is the center of both, for example, the divided pressure tool head of FIG. An example showing six division examples (plan view) can be applied. FIG. 3 (1) shows a pressurizing tool head 6 as described so far, a central area pressurizing part 6-1 having a square shape in the center and an outer peripheral area pressurizing part in which the outer peripheral part is integrated. An example consisting of 6-2 was shown. Further, as shown in FIG. 3 (2), the pressing tool head 6 is vertically divided, and from the center portion 8-1 and the side portion 8-2 (the left and right two regions may be used as a simultaneous integrated pressing region). Thus, a total of three divisions may be used. Alternatively, as shown in FIG. 3 (3), the outer peripheral region is divided with respect to the central region pressurizing unit 9-1 having a quadrangular shape at the center, and the outer peripheral region is divided into the corner region 9-2 (the four corners). It may be divided into a total of nine divisions as a simultaneous integral pressurizing region) and a side portion 9-3 (four side portions may be a simultaneous integral pressurization region). In addition, various division shapes and pressure sequences can be applied.

  Further, in the divided pressurizing tool head 6 as shown in FIG. 3A, the central region pressurizing unit 6-1 is connected to the wiring substrate 4 by the peripheral region pressurizing unit 6-2 at the initial contact stage of the pressurizing sequence. The tool head 6 as a whole is lowered so as to protrude toward the side (the central portion protrudes). In this way, the central portion is first pressurized, and then the pressure including the outer peripheral portion is pressed, so that the central portion can be excluded from the outer peripheral portion.

  Furthermore, it is assumed that the place where the semiconductor element and the wiring board first contact each other is not the central portion of the both, but, for example, the contact from the outer edge end portion. In that case, the pressure area is expanded so that a roller is applied from the first outer edge end to the opposite end. Finally, the pressure head is divided and the pressure sequence is performed so that the whole can be brought into contact and pressure contact.

  Needless to say, the pressurizing tool head is not limited to the above-described pressurization region division example and pressurization sequence. What is important is that the pressurization area of the pressurization tool head is divided into a plurality of pressurization areas so that pressurization can be controlled independently of each other.

  An example of such a method for realizing independent pressure control mechanisms for a plurality of divided regions of the pressure tool head is shown in the schematic cross-sectional view of FIG. In FIG. 4 (1), when the pressurizing tool head 6 divided into the central area pressurizing section 6-1 for strong pressurization and the outer peripheral area pressurizing section 6-2 for weak pressurization is pressed with different pressures, respectively. In the control motor pressurizing mechanism 10, a spring 11-1 having a large spring rate is set in the central region pressurizing unit 6-1, and a spring 11-2 having a small spring rate is set in the peripheral region pressurizing unit 6-2. Here, as shown in FIG. 4 (2), the central region pressurizing unit 6-1 applies a strong pressurization to the outer peripheral region pressurizing unit 6-2 by applying pressure by the control motor pressurizing mechanism 10. A weak pressurization occurs, and it is possible to perform the joining in which the voids 7 are eliminated by adjusting the pressurizing force in each pressurizing region.

  Of course, as shown in the schematic cross-sectional view of the pressurization structure in FIG. 5, an independent pressurization mechanism may be provided in each pressurization region. As shown in FIG. 5 (1), the individual pressurization mechanisms 12-1, 12 for each region using, for example, a hydraulic mechanism or a piezoelectric element in each of the divided regions 6-1, 6-2, 6-3. -2 and 12-3 are connected, and, as shown in FIG. 5 (2), the pressurizing mechanism 12-1 (central region) according to the region is assumed to have a stronger pressure than the others, and the gap 7 is eliminated. Can be controlled.

  As described above, in particular, when the bump electrode of the semiconductor element and the connection electrode of the wiring board, which are flip chip bonding, are connected by filling the semiconductor element / wiring board with the underfill material resin composition layer, the underfill is performed. Even when the material resin composition layer is implemented using a film-like film, the pressurizing tool head of the flip chip bonder which is a semiconductor manufacturing apparatus is divided into a plurality of pressurizing regions, and those pressurizing are performed. By enabling sequences such as pressure and pressurization timing to be performed independently of each other, the occurrence of voids in the underfill resin layer of bonded semiconductor devices such as BGA is a significant phenomenon compared to conventional methods. It became possible to let me.

  In addition, as the area of semiconductor chips increases and miniaturizes in the future, the need to deal with the increasing trend of void generation in underfill resins such as BGA elements and the suppression of voids will become stronger. By applying this semiconductor manufacturing apparatus according to the present invention, it can be expected that these requirements will be effectively met.

  The following additional notes are disclosed regarding the embodiments including the above examples.

(Appendix 1)
A semiconductor device manufacturing apparatus for flip-chip mounting a semiconductor element on a wiring board,
A pressing means for pressing the semiconductor element from the semiconductor element side against the wiring board side in contact with the back surface of the semiconductor element on which no protruding electrode is formed;
The pressurizing unit pressurizes a first pressurizing unit that presses a part of the first region on the back surface, and pressurizes a second region different from the first region, and is independent of the first pressurizing unit. And a controllable second pressurizing unit. A semiconductor device manufacturing apparatus, comprising:

(Appendix 2)
2. The semiconductor device manufacturing apparatus according to claim 1, wherein the second region is a region surrounding the first region.

(Appendix 3)
The apparatus for manufacturing a semiconductor device according to appendix 1, wherein the pressure intensity of the first pressure part is greater than the pressure intensity of the second pressure part.

(Appendix 4)
4. The semiconductor device manufacturing apparatus according to appendix 2 or 3, wherein the pressure start time of the first pressurizing unit is applied at a time earlier than the second pressure start time.

(Appendix 5)
The semiconductor according to any one of appendices 2 to 4, wherein the pressurizing surface of the first pressurizing unit is more convex than the pressurizing surface of the second pressurizing unit with respect to the surface of the wiring board. Equipment manufacturing equipment.

(Appendix 6)
6. The semiconductor device manufacturing apparatus according to any one of appendices 1 to 5, wherein a thermosetting film-like underfill material resin composition is formed between the semiconductor element and the wiring board.

(Appendix 7)
A method for manufacturing a semiconductor device in which a semiconductor element is flip-chip mounted on a wiring board using a semiconductor device manufacturing apparatus,
The semiconductor device manufacturing apparatus comprises:
The semiconductor device has a pressurizing unit that contacts the back surface of the semiconductor element on which the protruding electrode is not formed and pressurizes the semiconductor substrate side against the wiring substrate side, and the pressurizing unit is a part of the back surface A first pressurizing unit that pressurizes the first region; and a second pressurizing unit that pressurizes a second region different from the first region and can be controlled independently of the first pressurizing unit. A method for manufacturing a semiconductor device, comprising:

The figure explaining the pressurization tool head of the manufacturing apparatus of the semiconductor device concerning this embodiment The figure explaining the pressurization connection process of the manufacturing apparatus of the semiconductor device which concerns on this Embodiment The figure explaining the pressurization tool head from which the manufacturing apparatus of the semiconductor device which concerns on this Embodiment differs The figure explaining the pressurization mechanism of the pressurization tool head of the manufacturing apparatus of the semiconductor device concerning this embodiment (the 1) The figure explaining the pressurization mechanism of the pressurization tool head of the manufacturing apparatus of the semiconductor device concerning this embodiment (the 2) The figure explaining the pressurization connection process of the manufacturing apparatus of the conventional semiconductor device The figure explaining the subject of the pressure connection process of the manufacturing device of the conventional semiconductor device

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,101 Semiconductor element 2,102 Projection electrode 3,103 Underfill material resin composition layer 4,104 Wiring board 5,105 Connection electrode 6,8,9,106 Pressurization tool head 7,108 Air gap (void)
DESCRIPTION OF SYMBOLS 10 Control motor pressurization mechanism 11 Spring 12 Individual pressurization mechanism classified by area 107 Pressurization

Claims (4)

A semiconductor device manufacturing apparatus for flip-chip mounting a semiconductor element on a wiring board,
A pressing means for pressing the semiconductor element from the semiconductor element side against the wiring board side in contact with the back surface of the semiconductor element on which no protruding electrode is formed;
The pressurizing means includes a first pressurizing unit that pressurizes a first region including the predetermined outer edge end portion in the region of the back surface that is divided into three in parallel with a predetermined outer edge end portion of the back surface; A second pressurizing unit that pressurizes the second region in the center, and a third pressurizing unit that pressurizes the third region excluding the first and second regions, An apparatus for manufacturing a semiconductor device, wherein the third pressurizing unit pressurizes the back surface of the semiconductor element from the predetermined outer edge end portion toward the opposite outer edge end portion. The pressurizing unit is configured to change the order of the third pressurizing unit from the first pressurizing unit through the second pressurizing unit, or the second pressurizing unit from the third pressurizing unit. 2. The semiconductor device manufacturing apparatus according to claim 1, wherein pressurization is performed in the order of the first pressurization unit, and the region of the back surface to be pressurized is enlarged. A semiconductor device manufacturing apparatus for flip-chip mounting a semiconductor element on a wiring board,
A pressing means for pressing the semiconductor element from the semiconductor element side against the wiring board side in contact with the back surface of the semiconductor element on which no protruding electrode is formed;
The pressurizing means includes a central pressurizing unit that pressurizes a central region of the back surface, and a side pressurizing that pressurizes four regions extending from the central portion of the back surface to the respective outer edge ends of the back surface. And a corner pressurizing unit that pressurizes four corner regions of the back surface, and the back surface of the semiconductor element is formed by the central pressurizing portion, the side pressurizing portion, and the corner pressurizing portion. The semiconductor device manufacturing apparatus is characterized in that pressure is applied from a predetermined outer edge end portion toward an opposite outer edge end portion. A method of manufacturing a semiconductor device in which a semiconductor element is flip-chip mounted on a wiring board,
A first region including the outer edge end portion of the region of the back surface, which is divided into three in parallel with a predetermined outer edge end portion of the back surface, in contact with the back surface of the semiconductor element on which no protruding electrode is formed; A first pressurizing procedure for pressurizing the wiring board side from the semiconductor element side;
A second pressurizing procedure that contacts the back surface and pressurizes the second region at the center of the three divided regions from the semiconductor element side to the wiring substrate side;
A third pressurizing procedure for pressing the region excluding the first and second regions in the three divided regions from the semiconductor element side to the wiring board side in contact with the back surface It has a door,
The order of pressurization by the first to third pressurization procedures is changed from the first pressurization procedure to the third pressurization procedure through the second pressurization procedure, or the third pressurization procedure. A method of manufacturing a semiconductor device, wherein the first pressurizing procedure is changed from the procedure to the first pressurizing procedure, and the pressurizing region on the back surface is expanded .

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