JP5576053B2 - Semiconductor device manufacturing method and circuit board sheet - Google Patents

Description

The present invention relates to a method of manufacturing a semiconductor equipment, and a circuit board sheet.

  In semiconductor devices such as LSIs, miniaturization has progressed as the gate length of transistors has become shorter, and the number of external connection terminals has become increasingly multi-pin and narrow pitch, and both the height and diameter of external connection terminals are becoming smaller. .

  Flip-chip mounting is known as an advantageous method for bonding such miniaturized external connection terminals to connection pads on a circuit board. In the flip chip mounting, it is desirable to further improve the connection reliability between the semiconductor element and the circuit board.

Japanese Patent No. 4084834

Method of manufacturing a semiconductor equipment, and in the circuit board sheet, and an object thereof is to improve the connection reliability between the circuit board and the semiconductor element.

According to one aspect of the following disclosure, a step of providing a plurality of connection pads on a circuit board, connecting extensions of the connection pads to each other, and supplying a connection medium to the extension of the connection pads; A step of causing the connection pad of the substrate and the electrode terminal of the semiconductor element to face each other; and heating and melting the connection medium to transmit the melted connection medium from the extension to the connection pad; There is provided a method for manufacturing a semiconductor device, comprising: a step of connecting the connection pad and the electrode terminal via a step; and a step of cutting the connected extension portions and electrically separating the extension portions. .

According to another aspect of the disclosure, a base material in which a plurality of element mounting regions are defined, a plurality of connection pads formed in the element mounting region on the base material, a is extending outside the element mounting area, and are connected to each other, when connecting the electrode terminal and the connection pad of the semiconductor elements arranged in the element mounting region connecting medium is supplied, connected after the circuit board sheet having an extension portion of the connection pad that will be cut is provided.

  According to the disclosed method for manufacturing a semiconductor device, since the electrode terminal and the connection pad are metal-bonded to the connection medium, the connection strength between them is increased, and the connection reliability between the circuit board and the semiconductor element is improved.

  Furthermore, since the electrode terminal and the connection pad are connected by metal bonding, it is not necessary to press the semiconductor element against the circuit board in order to securely connect them, and the distance between the semiconductor element and the circuit board can be sufficiently maintained. it can. Accordingly, a sufficient amount of underfill resin can be filled between the semiconductor element and the circuit board, and the connection reliability can be effectively improved by the underfill resin.

FIGS. 1A and 1B are cross-sectional views in the course of manufacturing a semiconductor device according to a first example of preliminary matters. 2A to 2C are cross-sectional views in the course of manufacturing a semiconductor device according to a second example of preliminary matters. FIG. 3 is a cross-sectional view of a circuit board used in the first embodiment. FIG. 4 is an overall plan view and an enlarged plan view of a circuit board used in the first embodiment. 5A and 5B are cross-sectional views (part 1) in the middle of manufacturing the semiconductor device according to the first embodiment. 6A and 6B are cross-sectional views (part 2) in the middle of the manufacture of the semiconductor device according to the first embodiment. FIG. 7 is a cross-sectional view (part 3) of the semiconductor device according to the first embodiment during manufacture. FIGS. 8A and 8B are plan views (part 1) in the middle of manufacturing the semiconductor device according to the first embodiment. FIGS. 9A and 9B are plan views (part 2) of the semiconductor device according to the first embodiment during manufacture. FIG. 10 is an overall plan view and an enlarged plan view of a circuit board used in the second embodiment. FIG. 11 is an overall plan view when a connection medium is supplied to a circuit board used in the second embodiment. FIG. 12 is an overall plan view of a circuit board used in the third embodiment. FIG. 13 is a cross-sectional view when the semiconductor device according to the third embodiment is diced. 14A and 14B are cross-sectional views of the semiconductor device according to the fourth embodiment in the middle of manufacture. FIG. 15 is an overall plan view of a circuit board sheet according to the fifth embodiment. FIG. 16 is an overall plan view when the connection medium is supplied to the circuit board sheet according to the fifth embodiment.

(1) Preliminary items Prior to the description of the present embodiment, preliminary items serving as the basis of the present embodiment will be described.

First Example FIGS. 1A and 1B are cross-sectional views in the course of manufacturing a semiconductor device according to a first example of preliminary matters.

  This semiconductor device is manufactured as follows using a pressure contact method which is one of flip chip mounting techniques.

  First, as shown in FIG. 1A, a thermosetting underfill resin 3 is applied to the element mounting region of the circuit board 1.

  Then, the semiconductor element 4 is attracted by the bonding head 6 and the electrode terminals 5 of the semiconductor element 4 and the connection pads 2 of the circuit board 1 are aligned.

  Next, as shown in FIG. 1B, the semiconductor element 4 is pressed against the circuit board 1 using the bonding head 6, and the electrode terminal 5 and the connection pad 2 are brought into contact with each other. At the same time, the underfill resin 3 is heated and cured by a heater built in the bonding head 6.

  As described above, the semiconductor element 4 is mounted on the circuit board 1 by the flip chip mounting technique.

  In the above-described pressure contact method, the electrode terminal 5 and the connection pad 2 are merely in contact with each other by the pressing force of the bonding head 6, and the electrode terminal 5 is not bonded to the connection pad 2 by metal bonding.

  Therefore, when the underfill resin 3 is heated in the step of FIG. 1B, if warpage due to thermal expansion as shown by the dotted line occurs in the circuit board 1, the electrode terminals 5 and the connection pads 2 are laterally moved. It will shift relatively. Therefore, in such a pressure contact system, it is difficult to align the electrode terminal 5 and the connection pad 2 with high accuracy.

  When the circuit board 1 is warped as described above, the uncured underfill resin 3 flows out from the center of the circuit board 1 to the periphery, and the amount of the underfill resin 3 near the center of the circuit board 1 decreases.

  The underfill resin 3 plays a role of preventing the electrode terminal 5 from being displaced from the connection pad 2 and reducing the connection reliability between the semiconductor element 4 and the circuit board 1 by regulating the movement of the electrode terminal 5. However, if the amount of the underfill resin 3 is reduced as described above, it becomes impossible to effectively improve the connection reliability by the underfill resin 3.

  Furthermore, in order to make sure that the electrode terminal 5 and the connection pad 2 are in contact with each other, it is necessary to strongly press the semiconductor element 4 against the circuit board 1 by the bonding head 6 in the process of FIG.

Second Example FIGS. 2A to 2C are cross-sectional views in the process of manufacturing a semiconductor device according to a second example of preliminary matters.

  2A to 2C, the same elements as those described in FIGS. 1A and 1B are denoted by the same reference numerals, and description thereof is omitted below.

  In this example, a semiconductor device is manufactured as follows using a flip chip mounting technique different from that in the first example.

  First, as shown in FIG. 2A, the semiconductor element 4 is made to face the circuit board 1 by using a bonding head 6 and the electrode terminals 5 and the connection pads 2 are aligned.

  Thereafter, the resin 10 containing the bubble generating agent 10 a and the solder powder 10 b is supplied into the gap between the semiconductor element 4 and the circuit board 1.

  Subsequently, as shown in FIG. 2B, the resin 10 is heated by a heater built in the bonding head 6 to generate bubbles 10c from the bubble generating agent 10a. When the bubble 10c grows, the resin 10 is driven out of the bubble 10c, and the resin 10 self-assembles in a columnar shape between the electrode terminal 5 and the connection pad 2.

  Thereafter, by further heating the resin 10, as shown in FIG. 2C, the solder powder 10b in the resin 10 is melted, and the connection body 11 including the molten solder powder 10b is connected to the electrode terminal 5 and the connection pad. Between two.

  Thus, a mounting structure in which the electrode terminal 5 and the connection pad 2 are electrically and mechanically connected by the connection body 11 is completed.

  Such flip chip mounting is called a self-assembly method. In the pressure contact method described in the first example, the electrode terminal 5 and the connection pad 2 are merely in contact with each other. However, according to the self-assembly method, both the electrode terminal 5 and the connection pad 2 are solder in the connection body 11. A metal bonded structure is obtained.

  However, when the resin 10 is heated in the process of FIG. 2B, the temperature in the bonding head 6 is high near the center and low near the periphery, so that the bubbles 10c grow largely near the center of the semiconductor element 4 having a high temperature.

  Therefore, the diameter of the connection body 11 in the vicinity of the center of the semiconductor element 4 is reduced, and the connection body 11 cannot sufficiently reinforce the connection strength between the semiconductor element 4 and the circuit board 1, and the connection between the semiconductor element 4 and the circuit board 1. Reliability may be reduced.

  In view of such knowledge, the present inventor has arrived at the present embodiment as described below.

(2) First Embodiment FIG. 3 is a cross-sectional view of a circuit board 20 used in the present embodiment.

  The circuit board 20 includes wirings 25 made of copper and having a thickness of about 10 μm to 20 μm on both surfaces of a core base material 21 made of glass, epoxy resin, etc. A through hole 21a is formed in the core base material 21, and the wirings 25 on both sides of the core base material 21 are electrically connected through the through hole 21a.

  An insulating prepreg layer 22 is formed to a thickness of about 20 μm to 50 μm so as to cover the wiring 25 and the core substrate 21, and a connection of about 10 μm to 20 μm made of copper is formed on the prepreg layer 22. A pad 30 and an electrode pad 31 are formed.

  Among these, the connection pad 30 is connected to an electrode terminal of a semiconductor element to be described later, and is electrically connected to the lower layer wiring 25 through the via hole 22 a of the prepreg layer 22.

  On the other hand, the electrode pad 31 is connected to an external connection terminal such as a solder bump, and is used to electrically connect the motherboard and the circuit board 20.

  A solder resist layer 23 for preventing the solder from spreading out is formed on both surfaces of the circuit board 20 to a thickness of about 20 μm to 50 μm. In each of the pads 30 and 31, a region to which an external connection terminal or the like is bonded is exposed without being covered with the solder resist layer 23.

  FIG. 4 is an overall plan view and an enlarged plan view of the circuit board 20. FIG. 3 corresponds to a cross-sectional view taken along the line II of FIG.

  As shown in FIG. 4, the circuit board 20 has a square planar shape. The size of the circuit board 20 is not limited, but in this embodiment, the length of one side is 13.0 mm. An element mounting region R is defined on the circuit board 20, and a plurality of the above-described connection pads 30 are provided inside the element mounting region R in a peripheral shape.

  Furthermore, each connection pad 30 has an extended portion 30a extending outside the element mounting region R, and the extended portions 30a are integrally connected by a connection medium supply pattern 30b formed at their end portions. .

  Next, a method for manufacturing a semiconductor device in which a semiconductor element is mounted on the circuit board 20 will be described.

  5 to 7 are cross-sectional views in the course of manufacturing the semiconductor device, and FIGS. 8 to 9 are plan views thereof. In these drawings, the circuit board 20 is simplified, and only the connection pad 30 and the solder resist layer 23 as the uppermost layer of the board are shown.

  First, as shown in FIG. 5A, solder is supplied as a connection medium 35 onto the connection medium supply pattern 30 b of the circuit board 20. The supply method is not particularly limited, and the connection medium 35 can be supplied by a metal mask printing method, a dispenser coating method, or an ink jet coating method. Alternatively, the connection medium 35 may be supplied onto the connection medium supply pattern 30b by a solder jet apparatus, a flow solder apparatus, or an electrolytic plating apparatus.

  Also, the composition of the solder supplied as the connection medium 35 is not particularly limited. However, the solder contains at least one metal having a melting point of 120 ° C. to 250 ° C., and the metal is contained in the range of 20 wt% to 100 wt%. It is preferred to use. The upper limit of the melting point is set to 250 ° C. in order to prevent the core material 21 (see FIG. 3) made of resin from being thermally damaged when the connection medium 35 is melted by heating.

  As such solder, Sn-3.5 wt% Ag solder is used in this embodiment. Then, a solder paste containing this solder (M30-221BM5-21-11: Senju Metal Co., Ltd.) is printed on the connection medium supply pattern 30b by the metal mask printing method as the connection medium 35.

  Instead of solder, a single low melting point metal such as tin may be used as the connection medium 35.

  Thereafter, a thermosetting temporary fixing resin 44 is applied to the center of the element mounting region R of the circuit board 20 using a dispenser (FAD320S: manufactured by Muto Engineering Co., Ltd.). As the temporarily fixing resin 44, for example, 0.3 mg of UFR107 manufactured by Nagase ChemteX Corporation is applied.

  FIG. 8A is a plan view after the process is completed, and FIG. 5A corresponds to a cross-sectional view taken along the line II-II in FIG.

  Next, as shown in FIG. 5B, the electrode terminals 38 of the semiconductor element 37 and the connection pads 30 of the circuit board 30 are aligned while adsorbing the semiconductor element 37 by the bonding head 45 as an adsorption mechanism.

  The external dimensions of the semiconductor element 37 are not particularly limited. In this embodiment, a semiconductor element 37 having a square with a side of 6.5 mm and a thickness of 0.2 mm is used. As the electrode terminals 38, copper posts arranged in a peripheral shape with a pitch of 50 μm are used.

  Next, the bonding head 45 is lowered to fix the semiconductor element 37 on the temporary fixing resin 44, and then the temporary fixing resin 44 is heated via the semiconductor element 37 by the heating unit 45 a provided in the bonding head 45.

  Although the heating conditions are not particularly limited, in this embodiment, heating is performed at a temperature of 300 ° C. for 5 seconds. Thereby, the temporarily fixing resin 44 is cured, and the semiconductor element 37 is temporarily fixed on the circuit board 20 with the connection pad 30 and the electrode terminal 38 facing each other.

  In addition, although the space | interval of the connection pad 30 and the electrode terminal 38 is not specifically limited, It is preferable to maintain the state with a clearance gap between them like FIG.5 (b). Even if the bonding head 45 is not controlled with high accuracy, the gap between the connection pad 30 and the electrode terminal 38 can be maintained by the thickness of the temporary fixing resin 44 applied on the circuit board 20 as described above. However, if the gap can be secured by the bonding head 45, the temporarily fixing resin 44 may be omitted.

  FIG. 8B is a plan view after this process is completed, and FIG. 5B corresponds to a cross-sectional view taken along line III-III in FIG. 8B.

  Next, as shown in FIG. 6A, the connection medium 35 is heated to a temperature equal to or higher than its melting point in a reflow atmosphere of a reflow apparatus (1810EXZ: manufactured by Heller) and melted. In the reflow temperature profile, for example, a temperature period of 220 ° C. or higher is 15 seconds or longer, and the maximum temperature is 250 ° C. The reflow atmosphere is, for example, a nitrogen atmosphere.

  Instead of such a reflow device, a heating device such as an oven or a hot plate may be used.

  By heating the connection medium 35 in this way, the molten connection medium 35 is transmitted from the extension 30 a to the connection pad 30, and the connection medium 35 is filled in the gap between the connection pad 30 and the electrode terminal 38. When the connection medium 35 is naturally cooled and solidified, the connection pad 30 and the electrode terminal 38 are metal-bonded to the connection medium 35.

  FIG. 9A is a plan view after this process is completed, and FIG. 6A corresponds to a cross-sectional view taken along line IV-IV in FIG. 9A.

  In the present embodiment, as shown in FIG. 4, since the plurality of extension portions 30a are connected by the connection medium supply pattern 30b, the connection medium 35 melted on the connection medium supply pattern 30b is evenly distributed to each extension portion 30a. Can be made.

  Since the connection medium supply pattern 30b made of copper has better wettability with respect to the solder than the solder resist layer 23, the molten connection medium 35 travels only on each extension 30a, and the connection medium supply pattern 30b is formed on the solder resist layer 23. 35 does not spread wet.

  Next, as shown in FIG. 6B, 4 mg of CEL-C-3720 (Hitachi Chemical Co., Ltd.) is filled as a thermosetting underfill resin 39 between the circuit board 20 and the semiconductor element 37. The underfill resin 39 can be injected from the outer periphery of the semiconductor element 37 using the same dispenser used for applying the temporarily fixing resin 44.

  And underfill resin 39 is thermoset by heating the underfill resin 37 at a temperature of 165 ° C. for 2 hours using an oven.

  After that, as shown in FIG. 7, the extension 30a and the connection medium 35 thereon are cut by sandblasting. Note that the extension 30a and the connection medium 35 may be cut by wet etching, laser, ultrasonic cutter, dicing, water jet, or the like instead of the sandblasting process.

  FIG. 9B is a plan view after the process is completed, and FIG. 6B corresponds to a cross-sectional view taken along the line VV in FIG. 9B.

  As shown in FIG. 9B, the plurality of extensions 30a are cut at the linear cutting region D, whereby the extensions 30a are electrically independent.

  Thus, the basic structure of the semiconductor device according to this embodiment is completed.

  According to the above-described embodiment, as shown in FIG. 7, the electrode terminal 38 and the connection pad 30 are metal-bonded to the connection medium 35, so that the electrode terminal 38 and the connection pad 30 can be compared with the pressure contact method. The connection strength is strengthened, and the connection reliability between the circuit board 20 and the semiconductor element 37 is improved.

  Further, since the electrode terminal 38 and the connection pad 30 are not easily displaced in the lateral direction by the metal bonding, the electrode terminal 38 is positioned on the connection pad 30 with high accuracy even if the number of pins of the electrode terminal 38 is increased or the pitch is reduced. Can be combined.

  Furthermore, since the electrode terminal 38 and the connection pad 30 are connected by metal bonding, there is no need to press the semiconductor element 37 against the circuit board 20 in order to securely connect them, and the distance between the semiconductor element 37 and the circuit board 20 is increased. It can be maintained sufficiently. Thus, a sufficient amount of underfill resin 39 can be filled between the semiconductor element 37 and the circuit board 20, and the connection reliability can be effectively improved by the underfill resin 39.

  In particular, in the process of FIG. 6A, the gap between the electrode terminal 38 and the connection pad 30 is maintained and the connection medium 35 is melted to widen the gap between the semiconductor element 37 and the circuit board 20. The filling amount of 39 can be increased.

(3) Second Embodiment FIG. 10 is a plan view of a circuit board 20 used in the present embodiment. In FIG. 10, the same elements as those described in the first embodiment are denoted by the same reference numerals as those in the first embodiment, and the description thereof is omitted below.

  The present embodiment is different from the first embodiment only in the layout of the extension part 30a of the connection pad 30, and is otherwise the same as the first embodiment.

  As shown in FIG. 10, in the present embodiment, each of the plurality of extension portions 30 a is not connected, but is electrically independent in advance.

  The connection medium 35 is commonly supplied to the plurality of extension portions 30a as shown in the overall plan view of FIG.

  Even if it does in this way, the connection medium 35 fuse | melted by reflow can be spread evenly to each of the extension part 30a similarly to the case where several extension part 30a is connected like 1st Embodiment.

(4) Third Embodiment FIG. 12 is an overall plan view of a circuit board 20 used in the present embodiment. In FIG. 12, the same elements as those described in the first embodiment are denoted by the same reference numerals as those in the first embodiment, and the description thereof is omitted below.

  In the present embodiment, as shown in FIG. 12, a connection medium supply pattern 30 b is provided in the dicing street 40 of the circuit board 20.

  Then, as shown in the cross-sectional view of FIG. 13, the underfill resin 39 is filled according to the first embodiment, the underfill resin 39 is thermally cured, and then the circuit board 20 is diced along the dicing street 40. As a result of the dicing, the extension 30a of the connection pad 30 has a structure cut at the outer peripheral side surface 20x of the circuit board 20.

  According to such a method for manufacturing a semiconductor device, the connection medium supply pattern 30b that does not constitute a circuit is cut off in the circuit board 20, so that the completed semiconductor device is smaller than the first embodiment, and the semiconductor device This can contribute to the downsizing.

  Further, since the circuit board 20 is diced after the underfill resin 39 between the circuit board 20 and the semiconductor element 37 is cured, there is room for cutting chips generated during dicing to enter between the circuit board 20 and the semiconductor element 37. Disappear. Thereby, the risk that the adjacent electrode terminals 38 are electrically short-circuited due to cutting waste is reduced, and the reliability of the semiconductor device can be improved.

  Furthermore, since stress applied to the joint between the electrode terminal 38 and the connection pad 30 during dicing is relieved by the underfill resin 39, poor connection between the circuit board 20 and the semiconductor element 37 is less likely to occur during dicing.

(5) Fourth Embodiment FIGS. 14A and 14B are cross-sectional views in the middle of manufacturing a semiconductor device according to this embodiment. In FIG. 14, the same elements as those described in the first embodiment are denoted by the same reference numerals as those in the first embodiment, and description thereof is omitted below.

  In the present embodiment, as shown in FIG. 14A, the electrode terminal 38 of the semiconductor element 37 is attached to the circuit board while the semiconductor element 37 is vacuum-sucked by the bonding head 45 having the extended portion 45 b facing the connection medium 35. The connection pads 30 are made to face each other.

  At this time, it is preferable to secure a gap between the electrode terminal 38 and the connection pad 30 by adjusting the height of the bonding head 45 to fill the molten connection medium 35.

  In addition, by temporarily applying the temporarily fixing resin 44 (see FIG. 5B) as described in the first embodiment to the circuit board 20, it is easy to secure a gap between the connection pad 38 and the connection pad 30. May be.

  The material of the bonding head 45 is not particularly limited, but in the present embodiment, a ceramic bonding head 45 such as silicon carbide (SiC) is used. A portion of the bonding head 45 outside the semiconductor element 37 is provided as an extended portion 45b, and the length L of the extended portion 45b is, for example, about 4.0 mm.

  Next, as shown in FIG. 14B, the bonding head 45 is heated by the heating unit 45a. The heating method by the heating unit 45a is not particularly limited, and the bonding head 45 can be heated by lamp heating or resistance heating.

  The heating condition is, for example, that the temperature of the bonding head 45 is 300 ° C. and the heating time is 15 seconds.

  By heating the bonding head 45 in such a manner, the connection medium 35 is melted by the radiant heat from the expansion part 45b, and the connection pad 38 and the connection pad 30 are transmitted by the connection medium transmitted through the extension part 30a as in the first embodiment. Are mechanically and electrically connected.

  Thereafter, the steps of FIGS. 6B to 7 of the first embodiment are performed to complete the semiconductor device.

  According to the present embodiment described above, the connection medium 35 is used in the step of FIG. 14B by using the bonding head 45 used for aligning the electrode terminal 38 and the connection pad 30 in the step of FIG. Melt. Therefore, it is not necessary to use the reflow apparatus as in the first embodiment in order to melt the connection medium 35, and the manufacturing process of the semiconductor device can be simplified.

(6) Fifth Embodiment FIG. 15 is an overall plan view of a circuit board sheet 50 according to the present embodiment. In FIG. 50, the same elements as those described in the first embodiment are denoted by the same reference numerals as those in the first embodiment, and the description thereof is omitted below.

  In this circuit board sheet 50, the circuit board 20 described in the first embodiment is multifaceted, and a plurality of element mounting regions R corresponding to each circuit board 20 are defined in the core base material 21. And the connection pad 30 formed in the element mounting area | region R on the core base material 21 is provided with the extension part 30a extended outside the element mounting area | region R, as shown in FIG.

  FIG. 16 is an overall plan view in the case where the connection medium 35 is supplied onto the connection medium supply pattern 30b that connects the extension portions 30a. As described in the first embodiment, the connection medium 35 is a single low melting point metal such as tin or solder.

  By mounting the semiconductor element 37 in each element mounting region R of such a circuit board sheet 50 according to the first embodiment and dicing the circuit board sheet 50 along the dicing street 40, a plurality of semiconductor devices are collectively collected. Can be manufactured.

  Further, by providing the connection medium supply pattern 30b in the dicing street 40, the connection medium supply pattern 30b unnecessary for ensuring the function of the semiconductor device can be cut off during dicing.

DESCRIPTION OF SYMBOLS 1 ... Circuit board, 2 ... Connection pad, 3 ... Underfill resin, 4 ... Semiconductor element, 5 ... Electrode terminal, 6 ... Bonding head, 10 ... Resin, 10a ... Bubble generating agent, 10b ... Solder powder, 10c ... Bubble, DESCRIPTION OF SYMBOLS 11 ... Connection body, 20 ... Circuit board, 20x ... Outer peripheral side surface, 21 ... Core base material, 21a ... Through-hole, 22 ... Pre-preg layer, 22a ... Via hole, 23 ... Solder resist layer, 25 ... Wiring, 30 ... Connection pad, 30a ... Extension part, 30b ... Connection medium supply pattern, 31 ... Electrode pad, 35 ... Connection medium, 37 ... Semiconductor element, 38 ... Electrode terminal, 39 ... Underfill resin, 40 ... Dicing street, 44 ... Temporary fixing resin, 45 ... bonding head, 45a ... heating part, 45b ... expansion part, 50 ... circuit board sheet.

Claims (5)

Providing a plurality of connection pads on the circuit board, connecting extensions of the connection pads to each other, and supplying a connection medium to the extensions of the connection pads;
Making the connection pad of the circuit board and the electrode terminal of the semiconductor element face each other;
Heating and melting the connection medium to transmit the molten connection medium from the extension to the connection pad, and connecting the connection pad and the electrode terminal via the connection medium;
Cutting the connected extensions and making each extension electrically independent;
A method for manufacturing a semiconductor device, comprising:   The manufacturing method of a semiconductor device according to claim 1, wherein a gap between the connection pad and the electrode terminal is maintained in the step of connecting the connection pad and the electrode terminal through the connection medium. Method. Filling an underfill resin between the circuit board and the semiconductor element;
A step of curing the underfill resin,
The method for manufacturing a semiconductor device according to claim 1 , wherein the step of cutting the extension portion is performed after the step of curing the underfill resin. The method of manufacturing a semiconductor device according to claim 1 , wherein the plurality of extensions are connected in a dicing street of the circuit board. A substrate in which a plurality of element mounting areas are defined;
A plurality of connection pads formed in the element mounting region on the substrate;
When connecting the connection pads to the electrode terminals of the semiconductor elements which are on the base material and extend outside the element mounting area and are connected to each other and arranged in the element mounting area There is provided, and the extension of the connection pads is after connection Ru is cut,
A circuit board sheet comprising:

Images