JP3968321B2 - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

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Publication number
JP3968321B2
JP3968321B2 JP2003119256A JP2003119256A JP3968321B2 JP 3968321 B2 JP3968321 B2 JP 3968321B2 JP 2003119256 A JP2003119256 A JP 2003119256A JP 2003119256 A JP2003119256 A JP 2003119256A JP 3968321 B2 JP3968321 B2 JP 3968321B2
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Prior art keywords
wiring
semiconductor chip
opening
wiring board
leads
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JP2004327652A (en
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宏 黒田
順弘 木下
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Renesas Technology Corp
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Renesas Technology Corp
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    • H—ELECTRICITY
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    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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  • Computer Hardware Design (AREA)
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  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、半導体製造技術に関し、特にフリップチップ接続に適用して有効な技術に関する。
【０００２】
【従来の技術】
従来のフリップチップ接続では、基板の電極（ランド）は半導体チップの表面電極に対応して配置されており、基板の電極と半導体チップの表面電極とが突起電極を介して接続されている（例えば、特許文献１参照）。
【０００３】
【特許文献１】
特開昭６２−４９６３６号公報（第１図、第２図）
【０００４】
【発明が解決しようとする課題】
ところが、前記フリップチップ接続において、突起電極として金バンプを採用するフリップチップ接続では、基板の銅の配線リード側にＮｉ−Ａｕめっきを施し、金バンプと配線リードとの間でＡｕ−Ａｕ接続を行うものがあり、その際、Ａｕ−Ａｕ接続では、配線リードピッチが、例えば、８５μｍ程度の狭ピッチを採用した接続を行う場合がある。
【０００５】
この場合、基板上の配線リード間のスペースは、２０〜４０μｍ程度と非常に狭くなる。
【０００６】
その結果、耐湿バイアス試験などによってめっき下地の配線リードの銅と、配線リードを被覆している絶縁膜であるソルダレジスト膜とが加水分解して銅が溶け出し、Ｃｕ（銅）マイグレーションの発生によってリード間で電気的ショートが引き起こり、これにより、不良が発生するという問題が起こる。
【０００７】
本発明の目的は、耐湿性の向上を図る半導体装置およびその製造方法を提供することにある。
【０００８】
本発明の前記ならびにその他の課題、および目的と新規な特徴は、本明細書の記述および添付図面から明らかになるであろう。
【０００９】
【課題を解決するための手段】
本願において開示される発明のうち、代表的なものの概要を簡単に説明すれば、以下のとおりである。
【００１０】
すなわち、本発明は、絶縁膜によって覆われた被覆部と、前記被覆部に一体で形成され前記絶縁膜の開口部に露出する接続部とを有する複数の配線リードが前記開口部の外周縁を横切って並んで配置された配線基板と、前記配線基板の主面上にフリップチップ接続された半導体チップと、前記配線基板の主面と前記半導体チップの主面との間に配置され、前記半導体チップの表面電極とこれに対応する前記配線基板の前記配線リードの接続部とをそれぞれに接続する複数の突起電極とを有しており、前記配線基板における前記複数の配線リードそれぞれの端部が前記絶縁膜の開口部で終端し、前記複数の突起電極の配列方向に隣接する配線リード同士でそれぞれの前記配線リードにおける前記被覆部と前記接続部との境界部が前記開口部の対向する前記外周縁に配置されている。
【００１１】
また、本発明は、絶縁膜によって覆われた被覆部と、前記被覆部に一体で形成され前記絶縁膜の開口部に露出する接続部とを有する複数の配線リードが前記開口部の外周縁を横切って並んで配置されており、さらに前記複数の配線リードそれぞれの端部が前記絶縁膜の開口部で終端し、前記複数の配線リードの配列方向に隣接する配線リード同士で前記配線リードにおける前記被覆部と前記接続部との境界部が前記開口部の対向する前記外周縁に配置された配線基板を準備する工程と、表面電極上に突起電極が形成された半導体チップを準備する工程と、前記配線基板の主面上に樹脂接着部材を配置する工程と、前記配線基板の前記配線リードの接続部と前記半導体チップの突起電極との位置を合わせた後、熱圧着によって前記配線基板の前記配線リードの接続部を押し込んでフリップチップ接続方向に対して撓ませた状態で前記樹脂接着部材を硬化させることにより、前記配線基板の前記配線リードと前記突起電極とを接続して前記半導体チップをフリップチップ接続する工程とを有している。
【００１２】
【発明の実施の形態】
以下の実施の形態では特に必要なとき以外は同一または同様な部分の説明を原則として繰り返さない。
【００１３】
さらに、以下の実施の形態では便宜上その必要があるときは、複数のセクションまたは実施の形態に分割して説明するが、特に明示した場合を除き、それらはお互いに無関係なものではなく、一方は他方の一部または全部の変形例、詳細、補足説明などの関係にある。
【００１４】
また、以下の実施の形態において、要素の数など（個数、数値、量、範囲などを含む）に言及する場合、特に明示した場合および原理的に明らかに特定の数に限定される場合などを除き、その特定の数に限定されるものではなく、特定の数以上でも以下でも良いものとする。
【００１５】
以下、本発明の実施の形態を図面に基づいて詳細に説明する。なお、実施の形態を説明するための全図において、同一の機能を有する部材には同一の符号を付し、その繰り返しの説明は省略する。
【００１６】
図１は本発明の実施の形態の半導体装置に組み込まれる配線基板の配線パターンと金バンプのレイアウトの一例を示す平面図、図２は図１に示すＡ部の詳細構造を示す拡大部分平面図、図３は本発明の実施の形態の半導体装置の内部構造の一例を樹脂封止体を透過して示す平面図、図４は図３に示すＡ−Ａ線に沿って切断した断面の構造を示す断面図、図５は図３に示すＢ−Ｂ線に沿って切断した断面の構造を示す断面図、図６は図１に示す配線基板の配線パターンに対する変形例の配線パターンを示す拡大部分平面図、図７は本発明の実施の形態の半導体装置の組み立て手順の一例を示す製造プロセスフロー図、図８は本発明の実施の形態の半導体装置の組み立てで用いられるマトリクス基板の構造の一例を示す平面図、図９は本発明の実施の形態の半導体装置に組み込まれる第１の半導体チップの構造の一例を示す平面図、図１０は本発明の実施の形態の半導体装置の組み立てにおける第１の半導体チップの熱圧着時の構造の一例を示す拡大部分断面図である。
【００１７】
本実施の形態は、図４に示すように、半導体チップ（第１の半導体チップ１）と配線基板である個片基板３とを突起電極を介して電気的に接続するフリップチップ接続に関するものである。
【００１８】
フリップチップ接続では、第１の半導体チップ１は個片基板３に対してフェースダウン実装されており、個片基板３の主面であるチップ支持面３ａと第１の半導体チップ１の主面１ｂとが対向して配置され、かつ第１の半導体チップ１のパッド（表面電極）１ａと個片基板３の接続部３ｄとが突起電極である金バンプ１ｄを介して接続されている。
【００１９】
さらに、個片基板３と第１の半導体チップ１との間にはＮＣＦ（非導電フィルム：Non-Conductive Film)１０などの樹脂接着部材が配置されて個片基板３と第１の半導体チップ１を接続するとともに、金バンプ１ｄの周囲に配置されるため、フリップチップ接続部を保護している。
【００２０】
なお、フリップチップ接続では、図１０に示すように、第１の半導体チップ１に荷重および熱を印加した際に、金バンプ１ｄを介して付与される荷重によって個片基板３の配線リード３ｆの接続部３ｄを撓ませて沈み込ませ、この撓んだことによって発生する残留応力によって金バンプ１ｄと接続部３ｄとを接続させ、ＮＣＦ１０の熱硬化により両者の接続を保持している。
【００２１】
本実施の形態は、半導体装置に組み込まれる配線基板である個片基板３において、レジスト膜（絶縁膜）３ｇの開口部３ｈに並んで露出する複数の配線リード３ｆの接続部３ｄのうち、隣接する接続部３ｄのリードピッチを広げて第１の半導体チップ１の熱圧着時に発生する銅マイグレーションによるショート不良を防止するものである。
【００２２】
図１に示す個片基板３には、図２に示すレジスト膜（絶縁膜）３ｇによって覆われた被覆部３ｅと、この被覆部３ｅに一体で繋がって形成され、かつレジスト膜３ｇの開口部３ｈに露出する接続部３ｄとを有する複数の配線リード３ｆが開口部３ｈの外周縁３ｉを横切って並んで配置されている。
【００２３】
さらに、複数の配線リード３ｆそれぞれの端部がレジスト膜３ｇの開口部３ｈにおいて終端しているとともに、複数の金バンプ１ｄの配列方向に隣接する配線リード同士でそれぞれの配線リード３ｆにおける被覆部３ｅと接続部３ｄとの境界部が開口部３ｈの対向する外周縁３ｉに配置されている。
【００２４】
すなわち、金バンプ１ｄの配列方向と同方向に隣接する配線リード同士がそれぞれレジスト膜３ｇの開口部３ｈの向かい合った外周縁３ｉを横切って開口部３ｈ内に延在し、かつそれぞれの配線リード３ｆが開口部３ｈにおいて終端しており、その結果、図２に示すように、レジスト膜３ｇの開口部３ｈにおいて配線リード３ｆの接続部３ｄが開口部３ｈの向かい合う外周縁３ｉからそれぞれ互い違いに開口部３ｈ内に向かって延在し、かつそれぞれ対向する外周縁３ｉに到達する前に開口部３ｈ内で終端している。
【００２５】
したがって、隣接する配線リード３ｆ同士では、接続部３ｄと被覆部３ｅの境界部はそれぞれ向かい合った外周縁３ｉに配置される。
【００２６】
なお、個片基板３の配線リード３ｆは銅合金で形成されているとともに、図１０に示すように、レジスト膜３ｇの開口部３ｈに配置された配線リード３ｆの接続部３ｄの表面にはＮｉ−Ａｕめっき３ｎが形成されている。
【００２７】
このＮｉ−Ａｕめっき３ｎは、フリップチップ接続時に、金バンプ１ｄと銅合金の配線リード３ｆとの間でＡｕ（金）−Ａｕ（金）接続を可能にするためのめっきであり、配線リード３ｆの開口部３ｈに露出する接続部３ｄが、Ｎｉ−Ａｕめっき３ｎで覆われていることにより、金バンプ１ｄと配線リード３ｆとをＡｕ−Ａｕ接続することができる。
【００２８】
なお、ソルダレジスト膜の開口部３ｈに露出する配線リード３ｆの接続部３ｄは、Ｎｉ−Ａｕめっき３ｎで覆われているため、このめっきで覆われた箇所では銅マイグレーションは発生しない。
【００２９】
また、本実施の形態の個片基板３では、金バンプ１ｄが接続されるため、配線リード３ｆの狭ピッチ化が図られており、配線リード３ｆのレジスト膜３ｇの開口部３ｈに配置された接続部３ｄのリードピッチは、１００μｍ以下、例えば、５０〜８５μｍ程度であり、さらに、Ｎｉ−Ａｕめっき３ｎのめっき厚もあるため、個片基板３のレジスト膜３ｇの開口部３ｈにおける隣接する配線リード３ｆ間のスペースは、例えば、２０〜４０μｍとなる。
【００３０】
このようなリード間ピッチの狭ピッチ化が図られた個片基板３を用いて半導体装置の組み立てを行う場合、本実施の形態の個片基板３は銅マイグレーション対策として非常に有効である。
【００３１】
次に、このフリップチップ接続を利用して組み立てられる図３〜図５に示す本実施の形態の半導体装置の一例について説明する。
【００３２】
図３〜図５は、チップ積層構造の小型の半導体パッケージであるＢＧＡ（Ball Grid Array)９を示すものであり、１段目の第１の半導体チップ１が個片基板３に対してフリップチップ接続され、さらに、その上に積層された２段目の第２の半導体チップ２が個片基板３のワイヤボンディング用の接続端子３ｃにワイヤボンディングされている。
【００３３】
また、ＢＧＡ９は、個片基板３のチップ支持面３ａ（主面）側において第１の半導体チップ１とこれに積層された第２の半導体チップ２とが封止用樹脂を用いて封止された樹脂封止形のものである。
【００３４】
さらに、個片基板３のチップ支持面３ａとその反対側の面である裏面３ｂには、外部端子となる複数の半田ボール８がマトリクス配置で設けられている。
【００３５】
ＢＧＡ９の詳細構造を説明すると、主面であるチップ支持面３ａおよび裏面３ｂを有しており、かつチップ支持面３ａ上に図１に示すような複数の接続端子３ｃを有した個片基板３と、個片基板３の裏面３ｂにマトリクス配置で設けられた複数の半田ボール８と、主面１ｂおよび裏面１ｃを有しており、かつ主面１ｂ上に複数のパッド１ａ（表面電極）と複数の半導体素子とを有する第１の半導体チップ１と、主面２ｂおよび裏面２ｃを有しており、かつ主面２ｂ上に複数のパッド２ａと複数の半導体素子とを有する第２の半導体チップ２と、個片基板３のチップ支持面３ａ上に形成されており、かつ第１の半導体チップ１および第２の半導体チップ２を封止する樹脂封止体６と、第２の半導体チップ２のパッド２ａとこれに対応する個片基板３のワイヤボンディング用の接続端子３ｃとを接続する複数の導電性のワイヤ４とからなる。
【００３６】
さらに、第１の半導体チップ１は、個片基板３のチップ支持面３ａ上に第１の半導体チップ１の複数のパッド１ａが個片基板３の接続部３ｄと対向するように、第１の半導体チップ１の主面１ｂと個片基板３のチップ支持面３ａとが向かい合って配置されている。
【００３７】
その際、第１の半導体チップ１の主面１ｂと個片基板３のチップ支持面３ａとの間には、薄膜のＮＣＦ１０などの樹脂接着部材が配置され、ＮＣＦ１０が第１の半導体チップ１と個片基板３とを接続している。
【００３８】
ただし、前記樹脂接着部材としては、ＮＣＦ１０以外のＡＣＦ（異方性導電フィルム：Anisotropic Conductive Film)やペースト状の非導電性の樹脂接着部材などを用いてもよく、あるいは、その他の樹脂接着部材を用いてもよい。
【００３９】
なお、ＮＣＦ１０もしくはＡＣＦは、主に、フリップチップ接続を行う際に用いられる接着部材であり、エポキシ樹脂を主成分とする熱硬化性の樹脂によって形成されたテープ状のフィルムである。
【００４０】
また、第１の半導体チップ１の複数のパッド１ａは、図９に示すように、対向する長辺に沿ってかつその長辺間のほぼ中央部に１列に並んで配置（センタパッド配列）されており、これらに対応する個片基板３の複数のフリップチップ接続用の接続部３ｄとそれぞれ圧接している。その際、第１の半導体チップ１のパッド１ａに設けられた突起電極である金バンプ１ｄと、個片基板３のフリップチップ接続用の接続部３ｄとが圧接されている。
【００４１】
なお、金バンプ１ｄは、金線を用いてワイヤボンディング技術を利用して第１の半導体チップ１のパッド１ａに設けられたスタッドバンプなどと呼ばれる突起電極であり、ＢＧＡ９の組み立てにおいては、予め、第１の半導体チップ１のパッド１ａに設けておく。
【００４２】
一方、第２の半導体チップ２は、図３に示すように、その主面２ｂの４辺にほぼ沿って複数のパッド２ａが設けられた外周パッド配列のものであり、個片基板３のチップ支持面３ａ上に第１の半導体チップ１を介して配置されており、第１の半導体チップ１および第２の半導体チップ２は、ダイボンドフィルム材５を介してお互いの裏面１ｃ，２ｃが向かい合った状態で個片基板３上に配置されている。
【００４３】
したがって、ＢＧＡ９は、スタック構造において、１段目の第１の半導体チップ１が個片基板３に対してフェースダウン実装でフリップチップ接続され、一方、２段目の第２の半導体チップ２は、第１の半導体チップ１の裏面１ｃ上にフェースアップ実装されてワイヤボンディング接続されている。
【００４４】
このような構造のＢＧＡ９において、その個片基板３のチップ支持面３ａには、第１の半導体チップ１のパッド１ａの配列に対応して図１に示すようなフリップチップ接続用の接続部３ｄがレジスト膜３ｇの開口部３ｈに複数個１列に並んで設けられている。
【００４５】
それぞれの配線リード３ｆは、金バンプ１ｄの配列方向と同方向に隣接する配線リード同士がそれぞれレジスト膜３ｇの開口部３ｈの向かい合った外周縁３ｉを横切って開口部３ｈ内に延在し、かつそれぞれ開口部３ｈにおいて終端している。
【００４６】
したがって、図２に示すように、レジスト膜３ｇの開口部３ｈにおいて配線リード３ｆが開口部３ｈの向かい合う外周縁３ｉからそれぞれ互い違いに開口部３ｈ内に向かって延在し、それぞれの接続部３ｄが開口部３ｈに並んで配置されるとともにそれぞれ開口部３ｈ内で終端している。
【００４７】
このような構造でフリップチップ接続を行うと、その熱圧着時に金バンプ１ｄがそれぞれの接続部３ｄを押圧するため、接続部３ｄの残留応力を利用した金バンプ１ｄとのＡｕ−Ａｕ接続が可能となる。
【００４８】
なお、図１に示すように、個片基板３のチップ支持面３ａにおいて、レジスト膜３ｇの開口部３ｈに配置された接続部３ｄは、それぞれ配線部３ｍやスルーホール３ｌを介して接続端子３ｃと接続されている。さらに、個片基板３のチップ支持面３ａの外周端部には、めっき用配線３ｋが形成されている。
【００４９】
また、第１の半導体チップ１および第２の半導体チップ２は、例えば、シリコンなどによって形成されている。
【００５０】
さらに、樹脂封止体６の形成に用いられる樹脂成形用の樹脂は、例えば、熱硬化性のエポキシ樹脂などであり、個片基板３は、例えば、ガラス入りエポキシ基板であり、さらに、ワイヤ４は、例えば、金線である。
【００５１】
次に、本実施の形態のＢＧＡ９の組み立てを図７に示す製造プロセスフロー図を用いて説明する。
【００５２】
まず、ステップＳ１に示す基板準備を行う。
【００５３】
ここでは、図８に示すような複数のデバイス領域３ｊがマトリクス配置で形成された配線基板であるマトリクス基板７を準備する。
【００５４】
なお、各デバイス領域３ｊは、図１に示す個片基板３と同じ構造を有するものである。
【００５５】
すなわち、各デバイス領域３ｊには、隣接する配線リード同士がそれぞれレジスト膜３ｇの開口部３ｈの向かい合った外周縁３ｉを横切って開口部３ｈ内に延在し、かつそれぞれの配線リード３ｆが開口部３ｈにおいて終端しているようなパターンの複数の配線リード３ｆが形成されている。
【００５６】
一方、主面１ｂに半導体集積回路が形成され、かつパッド１ａ上に金バンプ１ｄが形成された図９に示す第１の半導体チップ１を準備する。
【００５７】
その後、ステップＳ２に示すＮＣＦ貼り付けを行う。その際、マトリクス基板７の各デバイス領域３ｊの半導体チップ搭載エリアに第１の半導体チップ１より若干大きめに切断したＮＣＦ１０を配置する。
【００５８】
続いて、ステップＳ３に示す第１の半導体チップ１のダイボンディングを行う。その際、第１の半導体チップ１のパッド１ａがデバイス領域３ｊのフリップチップ接続用の接続部３ｄと対向するように、かつパッド１ａとこれに対応する接続部３ｄとを位置決めして第１の半導体チップ１をデバイス領域３ｊ上に配置して、金バンプ１ｄをＮＣＦ１０に突き刺すことにより、第１の半導体チップ１をデバイス領域３ｊ上に仮固定する。
【００５９】
その後、第１の半導体チップ１の熱圧着を行う。すなわち、第１の半導体チップ１とマトリクス基板７に圧力および熱を加えてフリップチップ接続を行う。
【００６０】
その際、図１０に示すように、第１の半導体チップ１とマトリクス基板７に圧力と熱とを印加して金バンプ１ｄにより配線リード３ｆの接続部３ｄをフリップチップ接続方向に対して押し込んで撓ませた状態を形成し、この状態でＮＣＦ１０を熱硬化させることにより、配線リード３ｆの残留応力を利用してその接続部３ｄと金バンプ１ｄとの接続をＡｕ−Ａｕ接続で行う。
【００６１】
なお、配線リード３ｆを撓ませた状態でＮＣＦ１０を硬化させた場合、配線リード３ｆとレジスト膜３ｇの開口部３ｈの外周縁３ｉには引っ張り応力が発生し、配線リード３ｆとレジスト膜３ｇとは剥がれ易い状態となる。
【００６２】
しかし、本実施の形態では、金バンプ１ｄの配列方向と同方向に隣接する配線リード同士がそれぞれレジスト膜３ｇの開口部３ｈの向かい合った外周縁３ｉを横切って開口部３ｈ内に延在し、かつそれぞれの配線リード３ｆが開口部３ｈにおいて終端しているため、隣接する配線リード３ｆ同士では、接続部３ｄと被覆部３ｅの境界部はそれぞれ向かい合った外周縁３ｉに配置された状態となる。
【００６３】
すなわち、レジスト膜３ｇの開口部３ｈにおいて、隣接する配線リード３ｆ同士のリード間ピッチを十分に広げることができ、したがって、配線リード３ｆとレジスト膜３ｇとが剥がれて銅が流出したとしても電気的ショートの発生は防止できる。
【００６４】
つまり、銅マイグレーションの発生ポテンシャルを低減でき、その結果、ＢＧＡ９の耐湿性の向上を図ることができる。したがって、耐湿性バイアス試験における配線リード３ｆ間での銅マイグレーション不良の発生を防止することができる。
【００６５】
なお、レジスト膜３ｇの開口部３ｈに配置された配線リード３ｆの接続部３ｄの表面にはＮｉ−Ａｕめっき３ｎが形成されているため、開口部３ｈ内での銅の流出は防ぐことができる。
【００６６】
したがって、本実施の形態によれば、例えば、リードピッチ１００μｍ以下程度の配線リード３ｆの狭ピッチ化が図られた配線基板を用いた場合であっても、銅マイグレーションの発生ポテンシャルを低減でき、ＢＧＡ９の耐湿性の向上を図ることができる。
【００６７】
第１の半導体チップ１のダイボンディング終了後、ステップＳ４に示す第２の半導体チップ２のダイボンディングを行う。
【００６８】
すなわち、ダイボンドフィルム材５を介して第１の半導体チップ１上に第２の半導体チップ２をマウントする。
【００６９】
その後、ステップＳ５に示すワイヤボンディングを行う。ここでは、第２の半導体チップ２の複数のパッド２ａとそれぞれに対応するデバイス領域３ｊの複数のワイヤボンディング用の接続端子３ｃとを金線のワイヤ４を介して電気的に接続する。
【００７０】
さらに、ステップＳ６に示す樹脂封止を行う。ここでは、第１の半導体チップ１、第２の半導体チップ２および複数のワイヤ４を樹脂封止して樹脂封止体６を形成する。
【００７１】
その後、ステップＳ７に示すボール付けを行う。ここでは、各デバイス領域３ｊの裏面３ｂ上に、配線リード３ｆの複数のフリップチップ接続用の接続部３ｄやワイヤボンディング用の接続端子３ｃと電気的に接続する複数の半田ボール８を搭載する。
【００７２】
すなわち、各デバイス領域３ｊの裏面３ｂに、半田ボール８をリフローなどによって搭載してＢＧＡ９の外部電極を形成する。
【００７３】
その後、ステップＳ８に示す個片化を行う。ここでは、マトリクス基板７をダイシングによって切断して個片化し、図３に示すＢＧＡ９を取得する。
【００７４】
次に、本実施の形態の変形例の配線基板について説明する。
【００７５】
図６は、変形例の配線パターンを示す図であり、レジスト膜３ｇの開口部３ｈにおいて互い違いに配線リード３ｆを引き出す際に、隣接する配線リード３ｆ同士で同じ方向からしか引き出せない場合に、スルーホール３ｌを介して一端反対側に配線部３ｍを引き回してから配線リード３ｆを開口部３ｈに引き出すようにしたものである。
【００７６】
すなわち、配線部３ｍをスルーホール３ｌ（Ｂ）から内部配線を介してスルーホール３ｌ（Ｃ）に接続し、これにより、反対側から配線リード３ｆを開口部３ｈに引き出しており、同様に、配線部３ｍをスルーホール３ｌ（Ｄ）から内部配線を介してスルーホール３ｌ（Ｅ）に接続し、反対側から配線リード３ｆを開口部３ｈに引き出している。
【００７７】
これにより、レジスト膜３ｇの開口部３ｈ内の配線パターンを図２に示すものと同じにすることができ、同様の効果を得ることができる。
【００７８】
以上、本発明者によってなされた発明を発明の実施の形態に基づき具体的に説明したが、本発明は前記発明の実施の形態に限定されるものではなく、その要旨を逸脱しない範囲で種々変更可能であることは言うまでもない。
【００７９】
前記実施の形態では、半導体装置が、２つの半導体チップを積層したスタック構造のものを説明したが、半導体チップの積層数は３層またはそれ以上であってもよく、フリップチップ接続を行うものであれば単層チップであってもよい。
【００８０】
また、前記実施の形態では、半導体装置がＢＧＡ９の場合について説明したが、前記半導体装置は、フリップチップ接続された少なくとも１つの半導体チップを有するものであれば、ＬＧＡ（Land Grid Array)やＣＳＰ（Chip Size Package)などであってもよく、あるいはＭＣＭ（Multi-Chip-Module)などのように複数の半導体チップを搭載するものであってもよい。
【００８１】
さらに、前記実施の形態では、半導体装置の組み立てとして、マトリクス基板７を用いて行う一括モールドの場合を説明したが、前記組み立ては、マトリクス基板７の各デバイス領域３ｊをモールド金型の別々のキャビティで覆って樹脂モールドを行う個別モールドを採用した組み立てであってもよい。
【００８２】
【発明の効果】
本願において開示される発明のうち、代表的なものによって得られる効果を簡単に説明すれば、以下のとおりである。
【００８３】
配線基板の絶縁膜の開口部において、隣接する配線リード同士のリード間ピッチを広げることができ、これにより、銅マイグレーションの発生ポテンシャルを低減できる。その結果、半導体装置の耐湿性の向上を図ることができる。
【図面の簡単な説明】
【図１】本発明の実施の形態の半導体装置に組み込まれる配線基板の配線パターンと金バンプのレイアウトの一例を示す平面図である。
【図２】図１に示すＡ部の詳細構造を示す拡大部分平面図である。
【図３】本発明の実施の形態の半導体装置の内部構造の一例を樹脂封止体を透過して示す平面図である。
【図４】図３に示すＡ−Ａ線に沿って切断した断面の構造を示す断面図である。
【図５】図３に示すＢ−Ｂ線に沿って切断した断面の構造を示す断面図である。
【図６】図１に示す配線基板の配線パターンに対する変形例の配線パターンを示す拡大部分平面図である。
【図７】本発明の実施の形態の半導体装置の組み立て手順の一例を示す製造プロセスフロー図である。
【図８】本発明の実施の形態の半導体装置の組み立てで用いられるマトリクス基板の構造の一例を示す平面図である。
【図９】本発明の実施の形態の半導体装置に組み込まれる第１の半導体チップの構造の一例を示す平面図である。
【図１０】本発明の実施の形態の半導体装置の組み立てにおける第１の半導体チップの熱圧着時の構造の一例を示す拡大部分断面図である。
【符号の説明】
１ 第１の半導体チップ
１ａ パッド（表面電極）
１ｂ 主面
１ｃ 裏面
１ｄ 金バンプ（突起電極）
２ 第２の半導体チップ
２ａ パッド
２ｂ 主面
２ｃ 裏面
３ 個片基板（配線基板）
３ａ チップ支持面（主面）
３ｂ 裏面
３ｃ 接続端子
３ｄ 接続部
３ｅ 被覆部
３ｆ 配線リード
３ｇ レジスト膜（絶縁膜）
３ｈ 開口部
３ｉ 外周縁
３ｊ デバイス領域
３ｋ めっき用配線
３ｌ スルーホール
３ｍ 配線部
３ｎ Ｎｉ−Ａｕめっき
４ ワイヤ
５ ダイボンドフィルム材
６ 樹脂封止体
７ マトリクス基板（配線基板）
８ 半田ボール
９ ＢＧＡ（半導体装置）
１０ ＮＣＦ（樹脂接着部材）[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor manufacturing technique, and more particularly to a technique effective when applied to flip chip connection.
[0002]
[Prior art]
In the conventional flip chip connection, the electrode (land) of the substrate is arranged corresponding to the surface electrode of the semiconductor chip, and the electrode of the substrate and the surface electrode of the semiconductor chip are connected via a protruding electrode (for example, , See Patent Document 1).
[0003]
[Patent Document 1]
JP 62-49636 A (FIGS. 1 and 2)
[0004]
[Problems to be solved by the invention]
However, in the flip chip connection, in the flip chip connection that employs gold bumps as the protruding electrodes, Ni—Au plating is applied to the copper wiring lead side of the substrate, and the Au—Au connection is made between the gold bump and the wiring lead. In such a case, in the Au-Au connection, there is a case where the connection is performed using a narrow pitch of about 85 μm, for example, as the wiring lead pitch.
[0005]
In this case, the space between the wiring leads on the substrate is very narrow, about 20 to 40 μm.
[0006]
As a result, the copper of the wiring lead on the plating base and the solder resist film, which is the insulating film covering the wiring lead, are hydrolyzed by the moisture resistance bias test and the copper is melted, and the occurrence of Cu (copper) migration An electrical short occurs between the leads, which causes a problem that a defect occurs.
[0007]
An object of the present invention is to provide a semiconductor device and a method for manufacturing the semiconductor device that can improve moisture resistance.
[0008]
The above and other problems, objects, and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.
[0009]
[Means for Solving the Problems]
Of the inventions disclosed in this application, the outline of typical ones will be briefly described as follows.
[0010]
That is, according to the present invention, a plurality of wiring leads having a covering portion covered with an insulating film and a connection portion formed integrally with the covering portion and exposed to the opening portion of the insulating film have an outer peripheral edge of the opening portion. A wiring substrate disposed side by side; a semiconductor chip flip-chip connected to the main surface of the wiring substrate; and a semiconductor chip disposed between the main surface of the wiring substrate and the main surface of the semiconductor chip. A plurality of projecting electrodes that respectively connect the surface electrode of the chip and the connection portion of the wiring lead of the wiring board corresponding to the surface electrode, and the end of each of the plurality of wiring leads on the wiring board Between the wiring leads that terminate in the opening of the insulating film and are adjacent to each other in the arrangement direction of the plurality of protruding electrodes, the boundary between the covering portion and the connecting portion of each wiring lead is a pair of the opening. It is arranged on the outer circumference of.
[0011]
According to the present invention, a plurality of wiring leads having a covering portion covered with an insulating film and a connection portion formed integrally with the covering portion and exposed to the opening portion of the insulating film are provided on the outer peripheral edge of the opening portion. Further, each of the plurality of wiring leads is terminated at an opening of the insulating film, and the wiring leads adjacent to each other in the arrangement direction of the plurality of wiring leads are arranged in the wiring leads. A step of preparing a wiring board in which a boundary portion between a covering portion and the connection portion is disposed on the outer peripheral edge facing the opening, a step of preparing a semiconductor chip in which a protruding electrode is formed on a surface electrode, After the step of arranging a resin adhesive member on the main surface of the wiring board and the position of the connection part of the wiring lead of the wiring board and the protruding electrode of the semiconductor chip, the front of the wiring board is formed by thermocompression bonding. The semiconductor chip is connected by connecting the wiring lead and the protruding electrode of the wiring board by curing the resin adhesive member in a state where the connecting portion of the wiring lead is pushed and bent in the flip chip connecting direction. Flip-chip connection.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
In the following embodiments, the description of the same or similar parts will not be repeated in principle unless particularly necessary.
[0013]
Further, in the following embodiment, when it is necessary for the sake of convenience, the description will be divided into a plurality of sections or embodiments, but they are not irrelevant to each other unless otherwise specified. The other or all of the modifications, details, supplementary explanations, and the like are related.
[0014]
Also, in the following embodiments, when referring to the number of elements (including the number, numerical value, quantity, range, etc.), particularly when clearly indicated and when clearly limited to a specific number in principle, etc. Except for this, it is not limited to the specific number, and may be a specific number or more.
[0015]
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof will be omitted.
[0016]
FIG. 1 is a plan view showing an example of a layout of a wiring pattern and a gold bump of a wiring board incorporated in a semiconductor device according to an embodiment of the present invention, and FIG. 2 is an enlarged partial plan view showing a detailed structure of part A shown in FIG. 3 is a plan view showing an example of the internal structure of the semiconductor device according to the embodiment of the present invention through a resin sealing body, and FIG. 4 is a cross-sectional structure cut along the line AA shown in FIG. FIG. 5 is a cross-sectional view showing the structure of a cross section cut along the line BB shown in FIG. 3, and FIG. 6 is an enlarged view showing a wiring pattern of a modification to the wiring pattern of the wiring board shown in FIG. FIG. 7 is a partial plan view, FIG. 7 is a manufacturing process flow chart showing an example of the assembly procedure of the semiconductor device according to the embodiment of the present invention, and FIG. 8 shows the structure of the matrix substrate used in the assembly of the semiconductor device of the embodiment of the present invention. FIG. 9 is a plan view showing an example, and FIG. FIG. 10 is a plan view showing an example of the structure of a first semiconductor chip incorporated in the semiconductor device of the embodiment, and FIG. 10 shows an example of the structure at the time of thermocompression bonding of the first semiconductor chip in the assembly of the semiconductor device of the embodiment of the present invention. FIG.
[0017]
As shown in FIG. 4, the present embodiment relates to a flip-chip connection in which a semiconductor chip (first semiconductor chip 1) and a single substrate 3 as a wiring substrate are electrically connected via protruding electrodes. is there.
[0018]
In the flip chip connection, the first semiconductor chip 1 is mounted face-down on the individual substrate 3, and the chip support surface 3 a that is the main surface of the individual substrate 3 and the main surface 1 b of the first semiconductor chip 1. Are arranged opposite to each other, and the pad (surface electrode) 1a of the first semiconductor chip 1 and the connection portion 3d of the individual substrate 3 are connected via a gold bump 1d which is a protruding electrode.
[0019]
Further, a resin adhesive member such as NCF (Non-Conductive Film) 10 is disposed between the individual substrate 3 and the first semiconductor chip 1, and the individual substrate 3 and the first semiconductor chip 1. Are connected around the gold bump 1d, so that the flip chip connecting portion is protected.
[0020]
In the flip-chip connection, as shown in FIG. 10, when a load and heat are applied to the first semiconductor chip 1, the load of the wiring lead 3f of the individual substrate 3 is applied by the load applied through the gold bump 1d. The connecting portion 3d is bent and sunk, the gold bump 1d and the connecting portion 3d are connected by the residual stress generated by the bending, and the connection between the two is maintained by thermosetting of the NCF 10.
[0021]
In this embodiment, in the individual substrate 3 which is a wiring substrate incorporated in a semiconductor device, the adjacent ones of the connection portions 3d of the plurality of wiring leads 3f exposed side by side in the opening 3h of the resist film (insulating film) 3g. The lead pitch of the connecting portion 3d to be expanded is widened to prevent a short circuit failure due to copper migration that occurs during thermocompression bonding of the first semiconductor chip 1.
[0022]
The individual substrate 3 shown in FIG. 1 is formed with a covering portion 3e covered with the resist film (insulating film) 3g shown in FIG. 2, and an opening portion of the resist film 3g that is integrally connected to the covering portion 3e. A plurality of wiring leads 3f having connection portions 3d exposed to 3h are arranged side by side across the outer peripheral edge 3i of the opening 3h.
[0023]
Further, the end portions of the plurality of wiring leads 3f terminate in the opening 3h of the resist film 3g, and the wiring leads 3f adjacent to each other in the arrangement direction of the plurality of gold bumps 1d are covered with the covering portions 3e. And the connecting portion 3d are arranged at the outer peripheral edge 3i facing the opening 3h.
[0024]
That is, the wiring leads adjacent in the same direction as the arrangement direction of the gold bumps 1d extend into the opening 3h across the opposing outer peripheral edge 3i of the opening 3h of the resist film 3g, and each wiring lead 3f. 2 terminates in the opening 3h. As a result, as shown in FIG. 2, in the opening 3h of the resist film 3g, the connection portions 3d of the wiring leads 3f are alternately opened from the outer peripheral edge 3i facing the opening 3h. It extends toward the inside of 3h and terminates in the opening 3h before reaching the opposite outer peripheral edges 3i.
[0025]
Therefore, in the adjacent wiring leads 3f, the boundary portion between the connecting portion 3d and the covering portion 3e is disposed on the outer peripheral edge 3i facing each other.
[0026]
The wiring lead 3f of the individual substrate 3 is made of a copper alloy and, as shown in FIG. 10, Ni is formed on the surface of the connecting portion 3d of the wiring lead 3f disposed in the opening 3h of the resist film 3g. -Au plating 3n is formed.
[0027]
The Ni-Au plating 3n is plating for enabling Au (gold) -Au (gold) connection between the gold bump 1d and the copper alloy wiring lead 3f at the time of flip chip connection, and the wiring lead 3f. Since the connecting portion 3d exposed to the opening 3h is covered with the Ni—Au plating 3n, the gold bump 1d and the wiring lead 3f can be Au—Au connected.
[0028]
In addition, since the connection part 3d of the wiring lead 3f exposed to the opening 3h of the solder resist film is covered with the Ni—Au plating 3n, copper migration does not occur in the place covered with the plating.
[0029]
In the individual substrate 3 of the present embodiment, since the gold bumps 1d are connected, the pitch of the wiring leads 3f is reduced, and the wiring leads 3f are arranged in the openings 3h of the resist film 3g. The lead pitch of the connecting portion 3d is 100 μm or less, for example, about 50 to 85 μm, and further, there is a plating thickness of Ni—Au plating 3n, so that adjacent wiring in the opening 3h of the resist film 3g of the individual substrate 3 The space between the leads 3f is, for example, 20 to 40 μm.
[0030]
When assembling a semiconductor device using the individual substrate 3 in which the pitch between leads is reduced, the individual substrate 3 of the present embodiment is very effective as a countermeasure against copper migration.
[0031]
Next, an example of the semiconductor device of the present embodiment shown in FIGS. 3 to 5 assembled using this flip chip connection will be described.
[0032]
3 to 5 show a BGA (Ball Grid Array) 9 which is a small semiconductor package having a chip stacked structure. The first semiconductor chip 1 in the first stage is flip-chip with respect to the individual substrate 3. Further, the second semiconductor chip 2 in the second stage stacked on the second substrate is wire-bonded to the connection terminal 3c for wire bonding of the individual substrate 3.
[0033]
In the BGA 9, the first semiconductor chip 1 and the second semiconductor chip 2 stacked on the first semiconductor chip 1 are sealed on the chip support surface 3a (main surface) side of the individual substrate 3 using a sealing resin. Resin-sealed type.
[0034]
Furthermore, a plurality of solder balls 8 serving as external terminals are provided in a matrix arrangement on the chip support surface 3a of the individual substrate 3 and the back surface 3b opposite to the chip support surface 3a.
[0035]
The detailed structure of the BGA 9 will be described. An individual substrate 3 having a chip support surface 3a and a back surface 3b as main surfaces and a plurality of connection terminals 3c as shown in FIG. 1 on the chip support surface 3a. A plurality of solder balls 8 provided in a matrix arrangement on the back surface 3b of the individual substrate 3, a main surface 1b and a back surface 1c, and a plurality of pads 1a (surface electrodes) on the main surface 1b. A first semiconductor chip 1 having a plurality of semiconductor elements, a second semiconductor chip having a main surface 2b and a back surface 2c, and having a plurality of pads 2a and a plurality of semiconductor elements on the main surface 2b. 2, a resin sealing body 6 which is formed on the chip support surface 3 a of the individual substrate 3 and seals the first semiconductor chip 1 and the second semiconductor chip 2, and the second semiconductor chip 2 Pad 2a and individual pieces corresponding thereto Consisting of a plurality of conductive wires 4 for connecting the third and the connection terminal 3c for wire bonding.
[0036]
Further, the first semiconductor chip 1 is arranged such that the plurality of pads 1 a of the first semiconductor chip 1 are opposed to the connection portions 3 d of the individual substrate 3 on the chip support surface 3 a of the individual substrate 3. The main surface 1b of the semiconductor chip 1 and the chip support surface 3a of the individual substrate 3 are arranged to face each other.
[0037]
At this time, a resin adhesive member such as a thin film NCF 10 is disposed between the main surface 1 b of the first semiconductor chip 1 and the chip support surface 3 a of the individual substrate 3, and the NCF 10 is connected to the first semiconductor chip 1. The individual substrate 3 is connected.
[0038]
However, as the resin adhesive member, an ACF (Anisotropic Conductive Film) other than NCF10, a paste-like non-conductive resin adhesive member, or the like may be used, or other resin adhesive members may be used. It may be used.
[0039]
NCF 10 or ACF is an adhesive member mainly used for flip-chip connection, and is a tape-like film formed of a thermosetting resin whose main component is an epoxy resin.
[0040]
Further, as shown in FIG. 9, the plurality of pads 1a of the first semiconductor chip 1 are arranged in a line along the opposing long sides and at substantially the center between the long sides (center pad arrangement). Each of the individual substrates 3 corresponding thereto is in pressure contact with a plurality of flip chip connecting portions 3d. At this time, the gold bump 1d, which is a protruding electrode provided on the pad 1a of the first semiconductor chip 1, and the connection part 3d for flip chip connection of the individual substrate 3 are pressed against each other.
[0041]
The gold bump 1d is a protruding electrode called a stud bump or the like provided on the pad 1a of the first semiconductor chip 1 using a wire bonding technique using a gold wire. In assembling the BGA 9, It is provided on the pad 1 a of the first semiconductor chip 1.
[0042]
On the other hand, as shown in FIG. 3, the second semiconductor chip 2 has an outer peripheral pad arrangement in which a plurality of pads 2a are provided substantially along the four sides of the main surface 2b. The first semiconductor chip 1 and the second semiconductor chip 2 are arranged on the support surface 3 a via the first semiconductor chip 1, and the back surfaces 1 c and 2 c of the first semiconductor chip 1 and the second semiconductor chip 2 face each other via the die bond film material 5. It is arrange | positioned on the piece board | substrate 3 in the state.
[0043]
Therefore, the BGA 9 has a stack structure in which the first semiconductor chip 1 at the first stage is flip-chip connected to the individual substrate 3 by face-down mounting, while the second semiconductor chip 2 at the second stage is The first semiconductor chip 1 is mounted face up on the back surface 1c and connected by wire bonding.
[0044]
In the BGA 9 having such a structure, the chip support surface 3a of the individual substrate 3 is connected to the flip chip connecting portion 3d as shown in FIG. 1 corresponding to the arrangement of the pads 1a of the first semiconductor chip 1. Are arranged in a line in the opening 3h of the resist film 3g.
[0045]
Each wiring lead 3f extends into the opening 3h, with the wiring leads adjacent in the same direction as the arrangement direction of the gold bumps 1d crossing the opposite outer peripheral edge 3i of the opening 3h of the resist film 3g, respectively. Each ends at the opening 3h.
[0046]
Therefore, as shown in FIG. 2, in the opening 3h of the resist film 3g, the wiring leads 3f are alternately extended into the opening 3h from the outer peripheral edge 3i facing the opening 3h, and the respective connection portions 3d are formed. They are arranged side by side in the opening 3h and each end in the opening 3h.
[0047]
When flip-chip connection is performed with such a structure, the gold bumps 1d press the respective connection portions 3d at the time of thermocompression bonding, so that Au-Au connection with the gold bumps 1d using the residual stress of the connection portions 3d is possible. It becomes.
[0048]
As shown in FIG. 1, on the chip support surface 3a of the individual substrate 3, the connection portion 3d disposed in the opening 3h of the resist film 3g is connected to the connection terminal 3c via the wiring portion 3m and the through hole 3l, respectively. Connected with. Further, a plating wiring 3k is formed at the outer peripheral end of the chip support surface 3a of the individual substrate 3.
[0049]
The first semiconductor chip 1 and the second semiconductor chip 2 are made of, for example, silicon.
[0050]
Further, the resin molding resin used for forming the resin sealing body 6 is, for example, a thermosetting epoxy resin, the individual substrate 3 is, for example, a glass-containing epoxy substrate, and the wire 4 Is, for example, a gold wire.
[0051]
Next, assembly of the BGA 9 according to the present embodiment will be described with reference to a manufacturing process flow chart shown in FIG.
[0052]
First, substrate preparation shown in step S1 is performed.
[0053]
Here, a matrix substrate 7 which is a wiring substrate in which a plurality of device regions 3j as shown in FIG. 8 are formed in a matrix arrangement is prepared.
[0054]
Each device region 3j has the same structure as the individual substrate 3 shown in FIG.
[0055]
That is, in each device region 3j, adjacent wiring leads extend into the opening 3h across the opposite outer peripheral edge 3i of the opening 3h of the resist film 3g, and each wiring lead 3f has an opening. A plurality of wiring leads 3f having a pattern terminating in 3h are formed.
[0056]
On the other hand, the first semiconductor chip 1 shown in FIG. 9 in which a semiconductor integrated circuit is formed on the main surface 1b and a gold bump 1d is formed on the pad 1a is prepared.
[0057]
Then, NCF pasting shown in Step S2 is performed. At this time, the NCF 10 cut slightly larger than the first semiconductor chip 1 is arranged in the semiconductor chip mounting area of each device region 3j of the matrix substrate 7.
[0058]
Subsequently, die bonding of the first semiconductor chip 1 shown in step S3 is performed. At that time, the pad 1a of the first semiconductor chip 1 is opposed to the flip chip connecting connection portion 3d of the device region 3j, and the pad 1a and the corresponding connection portion 3d are positioned to position the first semiconductor chip 1. The first semiconductor chip 1 is temporarily fixed on the device region 3j by placing the semiconductor chip 1 on the device region 3j and piercing the gold bump 1d into the NCF 10.
[0059]
Thereafter, thermocompression bonding of the first semiconductor chip 1 is performed. That is, flip chip connection is performed by applying pressure and heat to the first semiconductor chip 1 and the matrix substrate 7.
[0060]
At that time, as shown in FIG. 10, pressure and heat are applied to the first semiconductor chip 1 and the matrix substrate 7, and the connecting portion 3d of the wiring lead 3f is pushed in the flip chip connecting direction by the gold bump 1d. A bent state is formed, and the NCF 10 is thermally cured in this state, whereby the connection portion 3d and the gold bump 1d are connected by Au-Au connection using the residual stress of the wiring lead 3f.
[0061]
When the NCF 10 is cured with the wiring lead 3f bent, tensile stress is generated at the outer peripheral edge 3i of the opening 3h of the wiring lead 3f and the resist film 3g, and the wiring lead 3f and the resist film 3g It will be in the state where it is easy to peel off.
[0062]
However, in the present embodiment, the wiring leads adjacent in the same direction as the arrangement direction of the gold bumps 1d extend into the opening 3h across the outer peripheral edge 3i facing each other of the opening 3h of the resist film 3g, And since each wiring lead 3f is terminated in the opening 3h, the boundary between the connecting portion 3d and the covering portion 3e is arranged on the outer peripheral edge 3i facing each other between the adjacent wiring leads 3f.
[0063]
That is, in the opening 3h of the resist film 3g, the pitch between the leads of the adjacent wiring leads 3f can be sufficiently widened. Therefore, even if the wiring leads 3f and the resist film 3g are peeled off and copper flows out, The occurrence of a short circuit can be prevented.
[0064]
That is, the occurrence potential of copper migration can be reduced, and as a result, the moisture resistance of the BGA 9 can be improved. Accordingly, it is possible to prevent the occurrence of defective copper migration between the wiring leads 3f in the moisture resistance bias test.
[0065]
In addition, since the Ni—Au plating 3n is formed on the surface of the connection portion 3d of the wiring lead 3f disposed in the opening 3h of the resist film 3g, the outflow of copper in the opening 3h can be prevented. .
[0066]
Therefore, according to the present embodiment, for example, even when a wiring board in which the wiring leads 3f having a lead pitch of about 100 μm or less are narrowed is used, the potential of copper migration can be reduced, and the BGA 9 It is possible to improve the moisture resistance.
[0067]
After die bonding of the first semiconductor chip 1, die bonding of the second semiconductor chip 2 shown in step S4 is performed.
[0068]
That is, the second semiconductor chip 2 is mounted on the first semiconductor chip 1 via the die bond film material 5.
[0069]
Thereafter, wire bonding shown in step S5 is performed. Here, the plurality of pads 2a of the second semiconductor chip 2 and the plurality of wire bonding connection terminals 3c in the corresponding device region 3j are electrically connected via the gold wire 4.
[0070]
Further, resin sealing shown in step S6 is performed. Here, the first semiconductor chip 1, the second semiconductor chip 2, and the plurality of wires 4 are resin-sealed to form the resin sealing body 6.
[0071]
Thereafter, ball attachment shown in step S7 is performed. Here, on the back surface 3b of each device region 3j, a plurality of solder balls 8 that are electrically connected to a plurality of flip chip connection connecting portions 3d and wire bonding connection terminals 3c of the wiring leads 3f are mounted.
[0072]
That is, the solder balls 8 are mounted on the back surface 3b of each device region 3j by reflow or the like to form the external electrodes of the BGA 9.
[0073]
Thereafter, individualization shown in step S8 is performed. Here, the matrix substrate 7 is cut into pieces by dicing, and the BGA 9 shown in FIG. 3 is obtained.
[0074]
Next, a wiring board according to a modification of the present embodiment will be described.
[0075]
FIG. 6 is a diagram showing a wiring pattern of a modified example. When the wiring leads 3f are alternately drawn out in the openings 3h of the resist film 3g, the through-wires can be drawn only when the neighboring wiring leads 3f can be drawn out only from the same direction. The wiring portion 3m is routed to the opposite side through the hole 3l, and then the wiring lead 3f is pulled out to the opening 3h.
[0076]
That is, the wiring part 3m is connected to the through hole 3l (C) from the through hole 3l (B) through the internal wiring, and thereby the wiring lead 3f is drawn out from the opposite side to the opening 3h. The portion 3m is connected from the through hole 3l (D) to the through hole 3l (E) through the internal wiring, and the wiring lead 3f is drawn out from the opposite side to the opening 3h.
[0077]
Thereby, the wiring pattern in the opening 3h of the resist film 3g can be made the same as that shown in FIG. 2, and the same effect can be obtained.
[0078]
Although the invention made by the present inventor has been specifically described based on the embodiments of the invention, the present invention is not limited to the embodiments of the invention, and various modifications can be made without departing from the scope of the invention. It goes without saying that it is possible.
[0079]
In the above embodiment, the semiconductor device has been described as having a stack structure in which two semiconductor chips are stacked. However, the number of stacked semiconductor chips may be three or more, and flip chip connection is performed. A single-layer chip may be used if necessary.
[0080]
In the above-described embodiment, the case where the semiconductor device is the BGA 9 has been described. However, if the semiconductor device has at least one semiconductor chip flip-chip connected, an LGA (Land Grid Array) or CSP (CSP) is used. Chip Size Package) or a plurality of semiconductor chips such as MCM (Multi-Chip-Module) may be mounted.
[0081]
Further, in the above embodiment, the case of collective molding using the matrix substrate 7 as the assembly of the semiconductor device has been described. However, in the assembly, each device region 3j of the matrix substrate 7 is separated into separate cavities of the mold. It may be an assembly employing an individual mold that is covered with a resin mold.
[0082]
【The invention's effect】
Of the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.
[0083]
In the opening of the insulating film of the wiring board, the pitch between the leads of the adjacent wiring leads can be widened, thereby reducing the potential for copper migration. As a result, the moisture resistance of the semiconductor device can be improved.
[Brief description of the drawings]
FIG. 1 is a plan view showing an example of a layout of wiring patterns and gold bumps of a wiring board incorporated in a semiconductor device according to an embodiment of the present invention.
FIG. 2 is an enlarged partial plan view showing a detailed structure of a part A shown in FIG.
FIG. 3 is a plan view showing an example of the internal structure of the semiconductor device according to the embodiment of the present invention through a resin sealing body;
4 is a cross-sectional view showing a cross-sectional structure taken along line AA shown in FIG. 3;
5 is a cross-sectional view showing a cross-sectional structure cut along the line BB shown in FIG. 3;
6 is an enlarged partial plan view showing a wiring pattern of a modification to the wiring pattern of the wiring board shown in FIG. 1; FIG.
FIG. 7 is a manufacturing process flowchart showing an example of the assembly procedure of the semiconductor device according to the embodiment of the present invention;
FIG. 8 is a plan view showing an example of a structure of a matrix substrate used in assembling the semiconductor device according to the embodiment of the present invention.
FIG. 9 is a plan view showing an example of a structure of a first semiconductor chip incorporated in the semiconductor device according to the embodiment of the present invention;
FIG. 10 is an enlarged partial sectional view showing an example of a structure at the time of thermocompression bonding of the first semiconductor chip in the assembly of the semiconductor device according to the embodiment of the present invention;
[Explanation of symbols]
1 1st semiconductor chip 1a Pad (surface electrode)
1b Main surface 1c Back surface 1d Gold bump (projection electrode)
2 Second semiconductor chip 2a Pad 2b Main surface 2c Back surface 3 Single substrate (wiring substrate)
3a Chip support surface (main surface)
3b Back surface 3c Connection terminal 3d Connection portion 3e Cover portion 3f Wiring lead 3g Resist film (insulating film)
3h Opening 3i Outer peripheral edge 3j Device area 3k Plating wiring 3l Through hole 3m Wiring part 3n Ni-Au plating 4 Wire 5 Die bond film material 6 Resin encapsulant 7 Matrix substrate (wiring substrate)
8 Solder balls 9 BGA (semiconductor device)
10 NCF (resin adhesive)

Claims (5)

フリップチップ接続された半導体チップを有する半導体装置であって、
絶縁膜によって覆われた被覆部と、前記被覆部に一体で形成され前記絶縁膜の開口部に露出する接続部とを有する複数の配線リードが前記開口部の外周縁を横切って並んで配置された配線基板と、
前記配線基板の主面上にフリップチップ接続された前記半導体チップと、
前記配線基板の主面と前記半導体チップの主面との間に配置され、前記半導体チップの表面電極とこれに対応する前記配線基板の前記配線リードの接続部とをそれぞれに接続する複数の突起電極とを有し、
前記配線基板における前記複数の配線リードそれぞれの端部が前記絶縁膜の開口部で終端し、前記複数の突起電極の配列方向に隣接する配線リード同士でそれぞれの前記配線リードにおける前記被覆部と前記接続部との境界部が前記開口部の対向する前記外周縁に配置されていることを特徴とする半導体装置。A semiconductor device having a semiconductor chip flip-chip connected,
A plurality of wiring leads having a covering portion covered with an insulating film and a connection portion formed integrally with the covering portion and exposed to the opening portion of the insulating film are arranged side by side across the outer peripheral edge of the opening portion. Wiring board,
The semiconductor chip flip-chip connected to the main surface of the wiring board;
A plurality of protrusions arranged between the main surface of the wiring board and the main surface of the semiconductor chip and respectively connecting the surface electrode of the semiconductor chip and the corresponding connecting portion of the wiring lead of the wiring board. An electrode,
The ends of each of the plurality of wiring leads in the wiring board terminate at the opening of the insulating film, and the wiring leads adjacent to each other in the arrangement direction of the plurality of protruding electrodes and the covering portions of the wiring leads A semiconductor device, wherein a boundary portion with a connection portion is disposed on the outer peripheral edge facing the opening. フリップチップ接続された半導体チップを有する半導体装置であって、
絶縁膜によって覆われた被覆部と、前記被覆部に一体で形成され前記絶縁膜の開口部に露出する接続部とを有する複数の配線リードが前記開口部の外周縁を横切って並んで配置された配線基板と、
前記配線基板の主面上にフリップチップ接続された前記半導体チップと、
前記配線基板の主面と前記半導体チップの主面との間に配置され、前記半導体チップの表面電極とこれに対応する前記配線基板の前記配線リードの接続部とをそれぞれに接続する複数の突起電極とを有し、
前記配線基板の前記配線リードが銅合金で形成されており、前記複数の配線リードそれぞれの端部が前記絶縁膜の開口部で終端し、前記複数の突起電極の配列方向に隣接する配線リード同士でそれぞれの前記配線リードにおける前記被覆部と前記接続部との境界部が前記開口部の対向する前記外周縁に配置されていることを特徴とする半導体装置。A semiconductor device having a semiconductor chip flip-chip connected,
A plurality of wiring leads having a covering portion covered with an insulating film and a connection portion formed integrally with the covering portion and exposed to the opening portion of the insulating film are arranged side by side across the outer peripheral edge of the opening portion. Wiring board,
The semiconductor chip flip-chip connected to the main surface of the wiring board;
A plurality of protrusions arranged between the main surface of the wiring board and the main surface of the semiconductor chip and respectively connecting the surface electrode of the semiconductor chip and the corresponding connecting portion of the wiring lead of the wiring board. An electrode,
The wiring leads of the wiring board are made of a copper alloy, and the ends of each of the plurality of wiring leads terminate at the opening of the insulating film, and the wiring leads adjacent to each other in the arrangement direction of the plurality of protruding electrodes In the semiconductor device, a boundary portion between the covering portion and the connection portion in each of the wiring leads is disposed on the outer peripheral edge facing the opening. フリップチップ接続された半導体チップを有する半導体装置であって、
絶縁膜によって覆われた被覆部と、前記被覆部に一体で形成され前記絶縁膜の開口部に露出する接続部とを有する複数の配線リードが前記開口部の外周縁を横切って並んで配置された配線基板と、
前記配線基板の主面上にフリップチップ接続された前記半導体チップと、
前記配線基板の主面と前記半導体チップの主面との間に配置され、前記半導体チップの表面電極とこれに対応する前記配線基板の前記配線リードの接続部とをそれぞれに接続する複数の突起電極とを有し、
前記配線基板の前記絶縁膜の開口部に配置される前記複数の配線リードの前記接続部において、前記複数の突起電極の配列方向に隣接する前記接続部間の設置ピッチが１００μｍ以下であり、前記複数の配線リードそれぞれの端部が前記絶縁膜の開口部で終端しており、前記複数の突起電極の配列方向に隣接する配線リード同士でそれぞれの前記配線リードにおける前記被覆部と前記接続部との境界部が前記開口部の対向する前記外周縁に配置されていることを特徴とする半導体装置。A semiconductor device having a semiconductor chip flip-chip connected,
A plurality of wiring leads having a covering portion covered with an insulating film and a connection portion formed integrally with the covering portion and exposed to the opening portion of the insulating film are arranged side by side across the outer peripheral edge of the opening portion. Wiring board,
The semiconductor chip flip-chip connected to the main surface of the wiring board;
A plurality of protrusions arranged between the main surface of the wiring board and the main surface of the semiconductor chip and respectively connecting the surface electrode of the semiconductor chip and the corresponding connecting portion of the wiring lead of the wiring board. An electrode,
In the connection portion of the plurality of wiring leads arranged in the opening of the insulating film of the wiring board, an installation pitch between the connection portions adjacent to each other in the arrangement direction of the plurality of protruding electrodes is 100 μm or less, The ends of each of the plurality of wiring leads terminate at the opening of the insulating film, and the wiring leads adjacent to each other in the arrangement direction of the plurality of protruding electrodes are connected to the covering portion and the connecting portion of the wiring leads. A boundary portion of the semiconductor device is disposed on the outer peripheral edge facing the opening. フリップチップ接続された半導体チップを有する半導体装置であって、
絶縁膜によって覆われた被覆部と、前記被覆部に一体で形成され前記絶縁膜の開口部に露出する接続部とを有する複数の配線リードが前記開口部の外周縁を横切って並んで配置された配線基板と、
前記配線基板の主面上にフリップチップ接続された前記半導体チップと、
前記配線基板の主面と前記半導体チップの主面との間に配置され、前記半導体チップの表面電極とこれに対応する前記配線基板の前記配線リードの接続部とをそれぞれに接続する複数の突起電極である金バンプとを有し、
前記配線基板の前記配線リードが銅合金で形成されており、前記配線リードの前記絶縁膜の開口部に配置された前記接続部の表面にＮｉ−Ａｕめっきが形成され、前記複数の配線リードそれぞれの端部が前記開口部で終端し、前記複数の突起電極の配列方向に隣接する配線リード同士でそれぞれの前記配線リードにおける前記被覆部と前記接続部との境界部が前記開口部の対向する前記外周縁に配置されていることを特徴とする半導体装置。A semiconductor device having a semiconductor chip flip-chip connected,
A plurality of wiring leads having a covering portion covered with an insulating film and a connection portion formed integrally with the covering portion and exposed to the opening portion of the insulating film are arranged side by side across the outer peripheral edge of the opening portion. Wiring board,
The semiconductor chip flip-chip connected to the main surface of the wiring board;
A plurality of protrusions arranged between the main surface of the wiring board and the main surface of the semiconductor chip and respectively connecting the surface electrode of the semiconductor chip and the corresponding connecting portion of the wiring lead of the wiring board. Having gold bumps as electrodes,
The wiring lead of the wiring board is formed of a copper alloy, Ni—Au plating is formed on the surface of the connection portion disposed in the opening of the insulating film of the wiring lead, and each of the plurality of wiring leads Of the wiring leads adjacent to each other in the arrangement direction of the plurality of protruding electrodes, the boundary between the covering portion and the connecting portion of each wiring lead is opposed to the opening. A semiconductor device arranged on the outer periphery. 絶縁膜によって覆われた被覆部と、前記被覆部に一体で形成され前記絶縁膜の開口部に露出する接続部とを有する複数の配線リードが前記開口部の外周縁を横切って並んで配置されており、さらに前記複数の配線リードそれぞれの端部が前記絶縁膜の開口部で終端し、前記複数の配線リードの配列方向に隣接する配線リード同士で前記配線リードにおける前記被覆部と前記接続部との境界部が前記開口部の対向する前記外周縁に配置された配線基板を準備する工程と、
表面電極上に突起電極が形成された半導体チップを準備する工程と、
前記配線基板の主面上に樹脂接着部材を配置する工程と、
前記配線基板の前記配線リードの接続部と前記半導体チップの突起電極との位置を合わせた後、熱圧着によって前記配線基板の前記配線リードの接続部を押し込んでフリップチップ接続方向に対して撓ませた状態で前記樹脂接着部材を硬化させることにより、前記配線基板の前記配線リードと前記突起電極とを接続して前記半導体チップをフリップチップ接続する工程とを有することを特徴とする半導体装置の製造方法。A plurality of wiring leads having a covering portion covered with an insulating film and a connection portion formed integrally with the covering portion and exposed to the opening portion of the insulating film are arranged side by side across the outer peripheral edge of the opening portion. Furthermore, the ends of each of the plurality of wiring leads are terminated at the opening of the insulating film, and the wiring leads adjacent to each other in the arrangement direction of the plurality of wiring leads are connected to the covering portion and the connecting portion of the wiring leads. And a step of preparing a wiring board in which the boundary portion is disposed on the outer peripheral edge facing the opening,
Preparing a semiconductor chip having a protruding electrode formed on a surface electrode;
Placing a resin adhesive member on the main surface of the wiring board;
After aligning the connection portion of the wiring lead of the wiring substrate with the protruding electrode of the semiconductor chip, the connection portion of the wiring lead of the wiring substrate is pushed by thermocompression and bent in the flip chip connection direction. A step of connecting the wiring lead of the wiring board and the protruding electrode and curing the semiconductor chip in a flip-chip manner by curing the resin adhesive member in a state Method.
JP2003119256A 2003-04-24 2003-04-24 Semiconductor device and manufacturing method thereof Expired - Fee Related JP3968321B2 (en)

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