TWI343601B - - Google Patents
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- Publication number
- TWI343601B TWI343601B TW95108291A TW95108291A TWI343601B TW I343601 B TWI343601 B TW I343601B TW 95108291 A TW95108291 A TW 95108291A TW 95108291 A TW95108291 A TW 95108291A TW I343601 B TWI343601 B TW I343601B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- etching
- insulating film
- interlayer insulating
- hbr
- Prior art date
Links
- 239000007789 gas Substances 0.000 claims description 106
- 238000005530 etching Methods 0.000 claims description 92
- 239000011229 interlayer Substances 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 35
- 238000001312 dry etching Methods 0.000 claims description 21
- 238000000206 photolithography Methods 0.000 claims description 20
- -1 perfluorocarbon compound Chemical class 0.000 claims description 13
- QLOAVXSYZAJECW-UHFFFAOYSA-N methane;molecular fluorine Chemical class C.FF QLOAVXSYZAJECW-UHFFFAOYSA-N 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 12
- 229910052736 halogen Inorganic materials 0.000 claims description 11
- 150000002367 halogens Chemical class 0.000 claims description 11
- UXPOJVLZTPGWFX-UHFFFAOYSA-N pentafluoroethyl iodide Chemical compound FC(F)(F)C(F)(F)I UXPOJVLZTPGWFX-UHFFFAOYSA-N 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 6
- 229910052770 Uranium Inorganic materials 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- RJCQBQGAPKAMLL-UHFFFAOYSA-N bromotrifluoromethane Chemical compound FC(F)(F)Br RJCQBQGAPKAMLL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 claims description 5
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 2
- 238000005459 micromachining Methods 0.000 claims description 2
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical compound FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 2
- 241000970813 Syntrophomonadaceae Species 0.000 claims 1
- 239000000463 material Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 14
- 150000001875 compounds Chemical class 0.000 description 9
- 229910052740 iodine Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 229910052794 bromium Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 125000001153 fluoro group Chemical group F* 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 150000003254 radicals Chemical class 0.000 description 4
- VPAYJEUHKVESSD-UHFFFAOYSA-N trifluoroiodomethane Chemical compound FC(F)(F)I VPAYJEUHKVESSD-UHFFFAOYSA-N 0.000 description 4
- 150000001722 carbon compounds Chemical class 0.000 description 3
- 239000002305 electric material Substances 0.000 description 3
- 238000003682 fluorination reaction Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910014263 BrF3 Inorganic materials 0.000 description 1
- 229910014271 BrF5 Inorganic materials 0.000 description 1
- 244000132059 Carica parviflora Species 0.000 description 1
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- XHVUVQAANZKEKF-UHFFFAOYSA-N bromine pentafluoride Chemical compound FBr(F)(F)(F)F XHVUVQAANZKEKF-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 230000005426 magnetic field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- FQFKTKUFHWNTBN-UHFFFAOYSA-N trifluoro-$l^{3}-bromane Chemical compound FBr(F)F FQFKTKUFHWNTBN-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW095108291A TW200735206A (en) | 2006-03-10 | 2006-03-10 | Method of dry etching of interlayer insulation film and etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW095108291A TW200735206A (en) | 2006-03-10 | 2006-03-10 | Method of dry etching of interlayer insulation film and etching device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200735206A TW200735206A (en) | 2007-09-16 |
| TWI343601B true TWI343601B (enExample) | 2011-06-11 |
Family
ID=45074892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095108291A TW200735206A (en) | 2006-03-10 | 2006-03-10 | Method of dry etching of interlayer insulation film and etching device |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200735206A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10607850B2 (en) | 2016-12-30 | 2020-03-31 | American Air Liquide, Inc. | Iodine-containing compounds for etching semiconductor structures |
| US11798811B2 (en) | 2020-06-26 | 2023-10-24 | American Air Liquide, Inc. | Iodine-containing fluorocarbon and hydrofluorocarbon compounds for etching semiconductor structures |
-
2006
- 2006-03-10 TW TW095108291A patent/TW200735206A/zh unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10607850B2 (en) | 2016-12-30 | 2020-03-31 | American Air Liquide, Inc. | Iodine-containing compounds for etching semiconductor structures |
| US11430663B2 (en) | 2016-12-30 | 2022-08-30 | American Air Liquide, Inc. | Iodine-containing compounds for etching semiconductor structures |
| US11798811B2 (en) | 2020-06-26 | 2023-10-24 | American Air Liquide, Inc. | Iodine-containing fluorocarbon and hydrofluorocarbon compounds for etching semiconductor structures |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200735206A (en) | 2007-09-16 |
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