TWI334623B - Process for wet-chemical treatment of one side of a silicon wafer using a liquid bath - Google Patents

Process for wet-chemical treatment of one side of a silicon wafer using a liquid bath Download PDF

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Publication number
TWI334623B
TWI334623B TW093107931A TW93107931A TWI334623B TW I334623 B TWI334623 B TW I334623B TW 093107931 A TW093107931 A TW 093107931A TW 93107931 A TW93107931 A TW 93107931A TW I334623 B TWI334623 B TW I334623B
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TW
Taiwan
Prior art keywords
silicon wafer
liquid bath
wet
chemical treatment
liquid
Prior art date
Application number
TW093107931A
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English (en)
Other versions
TW200511422A (en
Inventor
Franck Delahaye
Original Assignee
Rena Gmbh
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Publication date
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Application filed by Rena Gmbh filed Critical Rena Gmbh
Publication of TW200511422A publication Critical patent/TW200511422A/zh
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Publication of TWI334623B publication Critical patent/TWI334623B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Photovoltaic Devices (AREA)

Description

公告本 第093107931號專利申請案 . r-1 中文汝專利此沾替喊不牛/月j) 申請專利範圍： /叫7月f日修(更)正本 -種使用-液槽對矽晶圓進行二個面的濕式化學 方法，该矽晶圓在處理時位於輸送裝置上並以待處理 之底面的整個表面被輸送通過或越過該位於該液槽之液 體，其中該輸送裝置定位於該液槽中，且其中該矽晶圓 之不處理的頂面總是定位在該液體之水平面上，且其中 該矽晶圓的邊緣處形成一彎月面。 . 吻求項1之方法’其特徵為：該矽晶圓之頂面在處理時 不被保護》 士明求項1或2之方法，其特徵為：該矽晶圓之邊緣亦受 到處理。 如請求項1或2之方法，其特徵為：該輸送裝置以帶或滾 筒之形式提供。 如切求項1或2之方法，其特徵為：該矽晶圓在——次通 過式過程中連續地受到加工。 如請求項5之方法，其特徵為：將該等石夕晶圓之底面降低 至该液槽中。
7 ^-I 如明求項1或2之方法，其特徵為：作為一生產線之部分， 將該矽晶圓水平地輸送通過位於該液槽中的處理液體。 如凊求項1或2之方法，其特徵為：所使用的該液槽係一 周邊邊緣低於該處理液體之水平面的槽。 如凊求項1或2之方法，其特徵為；該處理係一蝕刻步驟。 〇’如請求項9之方法，其特徵為：該蝕刻步驟係在一液體組 口物中執行，該液體組合物包含Na〇H、κ〇Η、HF、ΗΝ〇3、 CMOWPCSOUWcdoc 1334623 含03的HF、及/或含氧化劑、諸如氧化酸的hf。 11. 如請求㈣之方法，其特微為：該氧化_氧化酸。 12. 如請求項10之方法，其特徵為：該液體組合物包含用 約束形成於該蝕刻期間的氣體之至少一添加劑。 C920S0PCZ20130?Cdoc
TW093107931A 2003-03-24 2004-03-24 Process for wet-chemical treatment of one side of a silicon wafer using a liquid bath TWI334623B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10313127A DE10313127B4 (de) 2003-03-24 2003-03-24 Verfahren zur Behandlung von Substratoberflächen

Publications (2)

Publication Number Publication Date
TW200511422A TW200511422A (en) 2005-03-16
TWI334623B true TWI334623B (en) 2010-12-11

Family

ID=33304787

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093107931A TWI334623B (en) 2003-03-24 2004-03-24 Process for wet-chemical treatment of one side of a silicon wafer using a liquid bath

Country Status (2)

Country Link
DE (1) DE10313127B4 (zh)
TW (1) TWI334623B (zh)

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DE102007026082A1 (de) * 2007-05-25 2008-11-27 Gebr. Schmid Gmbh & Co. Verfahren zur Behandlung von flachen Substraten sowie Verwendung des Verfahrens
DE102007054093B3 (de) 2007-11-13 2009-07-23 Rena Sondermaschinen Gmbh Vorrichtung und Verfahren zum Transport von flachem Gut in Durchlaufanlagen
WO2009081453A1 (ja) * 2007-12-20 2009-07-02 Teoss Co., Ltd. 増粘エッチング塗布液およびそれを用いた太陽電池用太陽光発電素子基板の選択エッチング方法
DE102008026199B3 (de) 2008-05-30 2009-10-08 Rena Gmbh Vorrichtung und Verfahren zur elektrischen Kontaktierung von ebenem Gut in Durchlaufanlagen
DE102008037404A1 (de) * 2008-09-30 2010-04-01 Schott Solar Ag Verfahren zur chemischen Behandlung eines Substrats
US9512538B2 (en) 2008-12-10 2016-12-06 Novellus Systems, Inc. Plating cup with contoured cup bottom
DE102009036929A1 (de) 2009-08-11 2011-04-21 Rena Gmbh Transportsystem für flache Gegenstände
EP2481080B1 (de) * 2009-09-22 2018-10-24 RENA Technologies GmbH Verfahren und vorrichtung zum rückätzen einer halbleiterschicht
DE102009051847A1 (de) * 2009-10-29 2011-05-19 Gebr. Schmid Gmbh & Co. Verfahren und Vorrichtung zur Behandlung einer Substratoberlfäche eines Substrats
DE102009059704A1 (de) 2009-12-18 2011-06-22 RENA GmbH, 78148 Vorrichtung zum Transportieren von flachen Gegenständen
WO2011072706A1 (de) 2009-12-18 2011-06-23 Rena Gmbh Verfahren zum abtragen von substratschichten
TW201218407A (en) 2010-10-22 2012-05-01 Wakom Semiconductor Corp Method for fabricating a silicon wafer solar cell
US9221081B1 (en) 2011-08-01 2015-12-29 Novellus Systems, Inc. Automated cleaning of wafer plating assembly
US9228270B2 (en) 2011-08-15 2016-01-05 Novellus Systems, Inc. Lipseals and contact elements for semiconductor electroplating apparatuses
US9988734B2 (en) 2011-08-15 2018-06-05 Lam Research Corporation Lipseals and contact elements for semiconductor electroplating apparatuses
US10066311B2 (en) 2011-08-15 2018-09-04 Lam Research Corporation Multi-contact lipseals and associated electroplating methods
CN104272438B (zh) 2012-03-28 2018-01-12 诺发系统公司 用于清洁电镀衬底保持器的方法和装置
KR102092416B1 (ko) 2012-03-30 2020-03-24 노벨러스 시스템즈, 인코포레이티드 역전류 디플레이팅을 이용한 전기도금 기판 홀더의 클리닝
DE102012107372B4 (de) 2012-08-10 2017-03-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Alkalischer Ätzprozess und Vorrichtung zur Durchführung des Verfahrens
US10416092B2 (en) 2013-02-15 2019-09-17 Lam Research Corporation Remote detection of plating on wafer holding apparatus
US9746427B2 (en) 2013-02-15 2017-08-29 Novellus Systems, Inc. Detection of plating on wafer holding apparatus
DE102013221522A1 (de) 2013-10-01 2015-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur kontinuierlichen Herstellung poröser Siliciumschichten
DE102013219886A1 (de) 2013-10-01 2015-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur kontinuierlichen Herstellung poröser Siliciumschichten
DE102014110222B4 (de) 2014-07-21 2016-06-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur Strukturierung von Ober- und Unterseite eines Halbleitersubstrats
US10053793B2 (en) 2015-07-09 2018-08-21 Lam Research Corporation Integrated elastomeric lipseal and cup bottom for reducing wafer sticking
DE102016009499A1 (de) 2016-08-04 2018-02-08 International Solar Energy Research Center Konstanz E.V. Verfahren und Vorrichtung zum Aufbringen einer Flüssigkeitskappe auf einer Substratoberseite als Schutz der Substratoberseite in einseitigen, horizontalen nasschemischen Behandlungsprozessen
DE202018005633U1 (de) 2018-12-08 2019-03-26 H2GEMINI Technology Consulting GmbH Vorrichtung zur selektiven Ätzung von Substraten

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Publication number Publication date
DE10313127A1 (de) 2004-11-18
TW200511422A (en) 2005-03-16
DE10313127B4 (de) 2006-10-12

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