TWI334217B - - Google Patents

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Publication number
TWI334217B
TWI334217B TW093107120A TW93107120A TWI334217B TW I334217 B TWI334217 B TW I334217B TW 093107120 A TW093107120 A TW 093107120A TW 93107120 A TW93107120 A TW 93107120A TW I334217 B TWI334217 B TW I334217B
Authority
TW
Taiwan
Prior art keywords
wafer
active layer
region
single crystal
thickness
Prior art date
Application number
TW093107120A
Other languages
English (en)
Chinese (zh)
Other versions
TW200423378A (en
Original Assignee
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Handotai Kk filed Critical Shinetsu Handotai Kk
Publication of TW200423378A publication Critical patent/TW200423378A/zh
Application granted granted Critical
Publication of TWI334217B publication Critical patent/TWI334217B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H10P14/20—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • H10P90/1908—
    • H10P90/1916—
    • H10W10/181—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
TW093107120A 2003-03-18 2004-03-17 SOI wafer and method for manufacturing same TW200423378A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003073768A JP4854917B2 (ja) 2003-03-18 2003-03-18 Ｓｏｉウェーハ及びその製造方法

Publications (2)

Publication Number Publication Date
TW200423378A TW200423378A (en) 2004-11-01
TWI334217B true TWI334217B (enExample) 2010-12-01

Family

ID=33027796

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093107120A TW200423378A (en) 2003-03-18 2004-03-17 SOI wafer and method for manufacturing same

Country Status (7)

Country Link
US (1) US7518187B2 (enExample)
EP (1) EP1605510B1 (enExample)
JP (1) JP4854917B2 (enExample)
KR (1) KR101007678B1 (enExample)
CN (1) CN100452408C (enExample)
TW (1) TW200423378A (enExample)
WO (1) WO2004084308A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200428637A (en) * 2003-01-23 2004-12-16 Shinetsu Handotai Kk SOI wafer and production method thereof
JP4854917B2 (ja) * 2003-03-18 2012-01-18 信越半導体株式会社 Ｓｏｉウェーハ及びその製造方法
JP2006294737A (ja) * 2005-04-07 2006-10-26 Sumco Corp Ｓｏｉ基板の製造方法及びその製造における剥離ウェーハの再生処理方法。
JP4604889B2 (ja) * 2005-05-25 2011-01-05 株式会社Sumco シリコンウェーハの製造方法、並びにシリコン単結晶育成方法
JP2007067321A (ja) * 2005-09-02 2007-03-15 Sumco Corp Ｓｉｍｏｘ基板およびその製造方法
KR20080086893A (ko) * 2005-12-27 2008-09-26 신에쓰 가가꾸 고교 가부시끼가이샤 Ｓｏｉ 웨이퍼의 제조 방법 및 ｓｏｉ 웨이퍼
JP5121139B2 (ja) * 2005-12-27 2013-01-16 ジルトロニック アクチエンゲゼルシャフト アニールウエハの製造方法
JP4805681B2 (ja) * 2006-01-12 2011-11-02 ジルトロニック アクチエンゲゼルシャフト エピタキシャルウェーハおよびエピタキシャルウェーハの製造方法
FR2938118B1 (fr) 2008-10-30 2011-04-22 Soitec Silicon On Insulator Procede de fabrication d'un empilement de couches minces semi-conductrices
FR3003997B1 (fr) * 2013-03-29 2015-03-20 Soitec Silicon On Insulator Procede de fabrication d'une structure composite
JP7495238B2 (ja) * 2020-02-19 2024-06-04 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの製造方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06204150A (ja) * 1992-12-28 1994-07-22 Sumitomo Sitix Corp 半導体用シリコン単結晶基板の製造方法
EP0691423B1 (en) * 1994-07-06 1999-03-24 Shin-Etsu Handotai Company Limited Method for the preparation of silicon single crystal and fused silica glass crucible therefor
JPH1079498A (ja) 1996-09-03 1998-03-24 Nippon Telegr & Teleph Corp <Ntt> Ｓｏｉ基板の製造方法
US6548382B1 (en) * 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
JPH1140786A (ja) 1997-07-18 1999-02-12 Denso Corp 半導体基板及びその製造方法
US6083324A (en) * 1998-02-19 2000-07-04 Silicon Genesis Corporation Gettering technique for silicon-on-insulator wafers
JP3932369B2 (ja) 1998-04-09 2007-06-20 信越半導体株式会社 剥離ウエーハを再利用する方法および再利用に供されるシリコンウエーハ
DE19823962A1 (de) * 1998-05-28 1999-12-02 Wacker Siltronic Halbleitermat Verfahren zur Herstellung eines Einkristalls
US6224668B1 (en) * 1998-06-02 2001-05-01 Shin-Etsu Handotai Co., Ltd. Method for producing SOI substrate and SOI substrate
US6077343A (en) * 1998-06-04 2000-06-20 Shin-Etsu Handotai Co., Ltd. Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it
JP3762144B2 (ja) * 1998-06-18 2006-04-05 キヤノン株式会社 Ｓｏｉ基板の作製方法
JP2000082679A (ja) * 1998-07-08 2000-03-21 Canon Inc 半導体基板とその作製方法
US6180497B1 (en) * 1998-07-23 2001-01-30 Canon Kabushiki Kaisha Method for producing semiconductor base members
JP4634553B2 (ja) * 1999-06-08 2011-02-16 シルトロニック・ジャパン株式会社 シリコン単結晶ウエーハおよびその製造方法
JP2001044398A (ja) * 1999-07-30 2001-02-16 Mitsubishi Materials Silicon Corp 張り合わせ基板およびその製造方法
JP2001144275A (ja) * 1999-08-27 2001-05-25 Shin Etsu Handotai Co Ltd 貼り合わせｓｏｉウエーハの製造方法および貼り合わせｓｏｉウエーハ
US6653209B1 (en) * 1999-09-30 2003-11-25 Canon Kabushiki Kaisha Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device
JP3994602B2 (ja) * 1999-11-12 2007-10-24 信越半導体株式会社 シリコン単結晶ウエーハおよびその製造方法並びにｓｏｉウエーハ
JP2002134518A (ja) * 2000-10-27 2002-05-10 Mitsubishi Materials Silicon Corp 抵抗率を調整したシリコンウェーハ及びそのウェーハの製造方法
JP3994665B2 (ja) * 2000-12-28 2007-10-24 信越半導体株式会社 シリコン単結晶ウエーハおよびシリコン単結晶の製造方法
US20020084451A1 (en) * 2000-12-29 2002-07-04 Mohr Thomas C. Silicon wafers substantially free of oxidation induced stacking faults
DE10124032B4 (de) * 2001-05-16 2011-02-17 Telefunken Semiconductors Gmbh & Co. Kg Verfahren zur Herstellung von Bauelementen auf einem SOI-Wafer
JP2003204048A (ja) * 2002-01-09 2003-07-18 Shin Etsu Handotai Co Ltd Ｓｏｉウエーハの製造方法及びｓｏｉウエーハ
JP4207577B2 (ja) * 2003-01-17 2009-01-14 信越半導体株式会社 Ｐドープシリコン単結晶の製造方法
JP4854917B2 (ja) * 2003-03-18 2012-01-18 信越半導体株式会社 Ｓｏｉウェーハ及びその製造方法

Also Published As

Publication number Publication date
EP1605510B1 (en) 2011-10-05
JP2004281883A (ja) 2004-10-07
JP4854917B2 (ja) 2012-01-18
EP1605510A4 (en) 2009-09-16
TW200423378A (en) 2004-11-01
US7518187B2 (en) 2009-04-14
KR20050109568A (ko) 2005-11-21
EP1605510A1 (en) 2005-12-14
CN1757115A (zh) 2006-04-05
KR101007678B1 (ko) 2011-01-13
CN100452408C (zh) 2009-01-14
WO2004084308A1 (ja) 2004-09-30
US20060086313A1 (en) 2006-04-27

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees