TWI332996B - Particulate reduction using temperature-controlled chamber shield - Google Patents
Particulate reduction using temperature-controlled chamber shield Download PDFInfo
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- TWI332996B TWI332996B TW093124825A TW93124825A TWI332996B TW I332996 B TWI332996 B TW I332996B TW 093124825 A TW093124825 A TW 093124825A TW 93124825 A TW93124825 A TW 93124825A TW I332996 B TWI332996 B TW I332996B
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/916—Differential etching apparatus including chamber cleaning means or shield for preventing deposits
Description
1332996 九、發明說明: 【發明所屬之技術領域】 本發明係與美國專利第6, 080, 287、6,197,165、6,287 4奶 號、及2001年3月!日提出申請之尚在申請中的美國專利申請案 第09/796,971號相關,於此將前述各美國專利均列入供作參考二 本發明係關於半導體晶圓的製造及減少半導體晶圓造 中的微粒污染;尤有關於遮蔽罩,其設置來保護處 於被沈積、及減少因沈積物從此處理室遮蔽罩剝落所造成的污 【先前技術】 、 鲁 腊·晶圓製造包含,在晶圓基板表面上建構及侧金屬薄 、或金屬層的製程,通常是在真空處理室下,利用化學或電漿製 程,行金屬的沈積或侧。半導體的製造中導致損失最大的原因 t ’ ίΐί!微粒子的污染。隨著半導體設計的愈來愈微型化的 上存在微粒子能夠使整個裝置無法運作。因此,對 於製&程序中之微粒子產生的控制的重要性正不斷增高t。 辟;空製程中,尤其是沈積製程,金屬蒸氣導致在處理室牆 勺霜理媒體接觸刺牆壁其他内部反應零件上形成包覆層, 二:rat成及最後關落,是半導體晶®被微粒子污染的主要 主。、L減少沈積物剝落的傾向,是處理設備和處理設計的 室鋪來阻止沈積物形成於常設的處理室表面上的處理 力的售點粒子麵,職粒子來料防止微粒子污染努 :: 以辦加罩更能抵抗娜,包含努力調整遮蔽罩的表面 清二3=;;=如果沒有經常移除或 判洛終九還是會發生。也有發現一些製程 7 1332996 條件會使祕縣惡化,麵侧、氣流、壓力 都是-些造成包覆频舰罩·_素。熱糾’ 【發明内容】 本發明之目的在於,減少半導體晶圓真空製 ί, ίί 積:r性的處理室零件,在 依據本發明之原理,由於熱應力和製程 此處理室遮蔽罩具有高導熱性的 =來自處理室内進行之處理的能量所造成遮 '蔽罩的溫度和= 溫度===壁蔽罩安裝在 的橫剖面更大’用以與處理室牆 觸比遮蔽罩 面。,,個讀之雜罩構件,料有S導熱性的安裝ϊ :施以介壁表2 一 s 1332996 在穿過該遮蔽罩且垂直於該遮蔽罩之軸線的 積。將此安裝表面崎密接觸方式 少要等於跨過遮蔽罩之橫剖面面積的導ϋ!、、·°構的導熱性,至: tmitZT^ZT具臨界性之處,藉以避免弧 =本發明之前述舰,改 所 直移動’致使晶座相對於處理;落相對於處理室的強制鉛 之臨界尺 尺寸。用於處理室遮蔽 可化成 ^Jz 因此,因熱造成的尺寸變化, 放電的可能性。再者,Μ + 變化,不會增加電弧 BE泌丨.Τ· — ▲ 猎由改善遮蔽罩的冷卻,使遮蔽罩的熱膨 成臨界間 地暖化處理室遮蔽罩構件。冬用';:二’以便均句 善的疏仵田用於對遮蔽罩預熱或除氣時, ==水平而且更為均勻’因此也會減K熱膨脹造成臨界間 ίΐίΐϋ,ί他特徵’配置了燈或其他加熱源, 被改 軸向,使所=?=:例中,將肅設置成沿鉛直方向或 =室的行 ‘4發=前==:’在處理室的預熱、排氣、或 處理空能夠將處理室遮蔽罩加熱到高於 的處理/皿度,藉以促使遮蔽罩的排氣更有效率。 9 1332996 ίΪ,牆壁 14 包” 在下側部32之開朗部的處理室牆 “糊部33座洛 在真; 44, j:^m%^::r^ 座13的外周部免於沈積。 更固見者日日圓12的日日 依據本發明的某一原理,本發明的一實施例設有戚#罝棹 件,它係由例如紹之高導熱性及導電性的材料所構成,1 有足夠的厚度以較低的阻力料熱及電荷 f 上接觸於處理室牆壁14,俾使熱及電荷流向處$ ’爾^ 和RF電性能量接地。 ^敝罩組件40的桶狀遮蔽罩41 4有環狀的向外延伸的巴緣 會將桶狀遮蔽罩41的凸緣部支持在處理室牆壁η之下侧部 巧的環狀肩部36,以具低阻力地熱連接於及電連接於處理室牆°壁 14。例如可以用多數的夾鉗部41a將桶狀遮蔽罩41連接於 部36。夾鉗部41a可以放鬆以便插入或移去桶狀遮蔽罩41 /爽鉗 部41a也可以夾緊以便設成將桶狀遮蔽罩41與處理室牆壁μ下 侧部32的環狀肩部36間,以具低阻力地熱連接及電連另 也可以使用其他扣接裝置來代替。 11 1332996 :具=== 於 ===== 用其他扣接裝置來代替。’、,、運接及電連接。另外,也可以使 下侧遮蔽罩43被支持於環形塊38上農 形塊38將下侧遮蔽罩43連接於處二數:環 便插入或移釘側遮蔽罩43;失至=^可峨鬆以 :=== 底: 室穑Ε43Η二支=二有連接於處理 脹。如㈣潛在的熱膨 源部遮蔽罩42會如箭頭51所罩42〉皿度上升時,上側 蔽罩42的外緣與桶狀遮蔽罩°設=於上侧源部遮 ⑽:下: 12 1332996 間隙57 (圖1)被保持在下側遮蔽罩43與晶座遮蔽罩44之間, 並保留足夠的大的間隙以因應遮蔽罩被加熱來避免弧光放電❶設 置該等間隙52及55-57以便在尺寸較不具臨界性時發生尺寸變 化,藉以避免弧光放電可能性的增加。
藉由改善對本發明所設有之臨界尺寸和臨界間隙的控制,亦 可減少弧光放電的可能性》較佳的情況是,利用對準(aH卯)結 構,在打開或關閉該裝置的處理室時迫使改善它的對準情況 (alignment),而使晶座相對於處理室落在更同心的位置,來改 等尺寸。如圖2A-2E所示,使位在處理室牆壁14頂緣的定位 ,銷61,與位在處理室頂側部33上的對準導引部肋對準,以供 室的源部和頂卿33鑛域理室11崎蝴鉛直移動。’、 置參考登錄點或零登錄,點(無圖示),用以將處理室遮蔽 2 = 在#該#舰罩如域般承受__能夠使臨界 的位置。因此,熱所造成的尺寸改變不會增加弧 或摔整排紅外線燈7〇,俾使燈70在預熱處理 i室罩41_44 ’該燈7〇設置成鉛 ^並以大致相#間距環繞處理室u的中心轴,然 ^的間練供可接受的溫度分佈。把燈7
燈ΐ〇中UBB了所示的位置俾使遮蔽罩44曝露於 面說明的實施例中,朝鉛直方向或軸 中。利用、^ί吏夕數的處理室遮蔽罩構件曝露於執輻射 處理時產以的預熱’以使每批第-片晶圓進行 圖。ί 的概略 上侧源部遮蔽罩42包=:==、安 13 1332996 f兀件440。頂環41〇包含内表面410a、頂表面410b、外表面41〇c。 f斜環42G包含内表面偷,連接於頂環410的内表面她;外 面420c,連接於頂環41〇的外表面41〇c。底環43〇包含内表面 t f,連接於傾斜環420的内表面42以;外表面430c,連接於傾 f裱420的外表面42〇c ;底表面43〇d,連接於内表面43如與外 表面430c。安裝元件440包含配合表面44〇b,連接於傾钭^、42f) 觀外表面連接於安裝元件_二:面: 下侧絲她,連接於安裝元件440的底表面· 和底環430的外表面43〇c。 上側源部遮蔽罩42可以由單一塊狀的材料來製造。例如,可 =使馳(6G61-T6)。也可以使用其他材料替代,也可以使用一 可:源部遮蔽罩42包含高度4〇卜例如,高度401 J至^大約為116. 4mm 〇 延伸包含多數的貫穿孔備,從配合表面働 例如,孔460的直徑可以至少大約為25如 ίίϋ ΐ角移及462可以大約為40· 3度及9〇度。孔460 :一置於直徑大約為560麵的圓464。安裝元件44〇可以包含至 二槽450,從配合表面44〇b延伸至底表面物d。例 ^i U以配置於直徑大約為584. 7_ _ 451,且開槽鬚的角 至少大大約^/1.5度°此外’開槽棚可以具有長度452 iit ί 1 \4i3rn_5mm;彎曲端部似其半徑 L .勺4 2.45麵。再者,安裝元件侧可以包含至少一個孔 置 =1合|表大 延伸至絲面44Gd ^例如,孔謂也可配 、頂=的圓;孔470的直徑大約為5刪。 m 412 or . s κ 可以至少大約為372. 8mm,頂環410的外 二〇以至夕大約為38〇·9πϋη。頂環410可以更包含一钭角特徵 1.5,; Λ1 表面42〇d V人T I1大約為1215度。傾斜環420的外 表面420c可以包含—平坦表面似,此平坦表面似可以配置在 14 1332996 ί装配合表面440b上方一段距離424(至少大約32.— 而舰Hrrf 利用她至少大約為12·7咖的曲表 表鳴°下細她的外徑 的厚約為567mm的外徑427;至少大約為6·3_ !·_表面_可配置在離開配合表面働 少乂約為19 0 為74mm)處。外表面43〇C可以利用半徑至 420c、f為111的表面436,而連接於傾斜環個的外表面 的頂卜徑441可以至少大約為605·0麵。頂環· 約Λ4? 4配置在離開配合表面4她一段距離443(至少大 祕Π 的内表面她、頂表面41此、和至少一部分 面42〇Hi竹砂棚i另外,也可以對傾斜環420的内表 及底表面二d以對底環430的内表面43〇a、外表面43〇c、 it ^ ° ^ W€ 420 Ϊ ^面_ '外表面43〇C、及底表面4謝進 仃電弧喷塗491。例如,電弧喷塗可以包含雙線電弧喷塗(她 ΠΐίίΪ# ί用紹(按照規格115_〇M48)。於另一實施例 喷塗 表面進行喷砂,且也可以對其他表面進行電弧 5A為月一實施例之桶狀遮蔽罩的概略圖。圖 Α為,視圖,圖5Β為侧視圖;圖SC與SD為詳細圖。 表面含凸緣510和本體部520 °凸緣510包含頂 = 及配合表面51〇d。本體部520包含内表 Ϊ面520a。 ,底表面52Gd ’連接於外表面及内 15 1332996 本體部520的内矣而_ 表:=連接於凸緣训的頂徑大約為9·0刪的曲 底表面510d。例如,表面510b延伸至 的角位移555、561及562可以至二少分約為〇. 8細。孔560 21. 2度、大約為9〇度。孔56〇可以配置於=16. 3度、大約為 564。 ;直仏大約為634mm的圓 凸緣510可以包含至少一個 底表面510d。例如,開槽55〇可以 頂表面510b延伸至 ^圓刷上。開槽55〇的角位移挪可|至^^=為6編 外,開槽550可以具有至少大約為 $為16. 3度。另 4. 9咖的寬度553 ;縣徑至少=職,度552 ;至少大約為 者,凸緣5Π)可以包含至少_^= 5475刪=4。再 至底表面510d。例如,對準從頂表面5丨此延伸 的圓。對準孔57。 510b^ 削除部530的角位移534、535可以至少西2=510的外緣。 延伸從頂表面遍 的外緣。對準特徵部_可⑽則 約為17. 9麵的深度573、及半徑大約^ 長度572、大 準特徵部58。的角位移586可以2j33.515;m的圓弧角Μ。對 1332996 喷塗591。例如’電弧倾可以包含雙線電弧喷塗, ίΞ;!^^ 115'01~148) ° t 表面進仃物,且也可⑽其他表面進行電弧嘴塗β 撤本發明一實施例之下側遮蔽罩的概略圖。下 内ί=61()、本體部㈣、底環630。頂環610包含 620b===n61Qb'外表面本體部620包含頂表面 外Ltt 表面61°a和底環63°的内表面隊 Z。。底包含底表面_,連接於内表面咖和的^表面面 妯存^部620可以包含至少一個貫穿孔660,從頂表面620b延 伸至底表面_。例如,孔_的直徑 貝表面曝延 可以配置於半徑大約為241. 5_的_。約為12· G咖。孔刪 頂環610可以包含圓弧尾端612,其半徑 底環630可以包含圓弧尾端631,其半徑至 、;、[' · m: 610 2< ^ 6i; i丰可以利用半徑至少大約為2. G麵的圓弧角632、 及+仨至9大約為2.〇111111的圓弧角633,而連接 ..ΤΙ^< 610 670 〇 徑至少大約為301· 3mm的圓674。孔670的直經至少大/ 頂環610包含多數的貫穿孔奶 頂環610可以具有大約為592 7職 厚=r以具有大約為 頂環_的高度617可以大約為28 _;本體物的厚度 17 1332996 可以二約^ 6. 3刪;底環63。的高度637可以大約為瓜 "實施例中,下側遮蔽罩43包含單一塊的材料。例:下 T6)。或者, 表面_a及底表面630d,進行嘴砂_。甚者以 的内 的至少—部分的底表面_ ; _的内Ϊ表 Ϊ可:_,進行電弧噴塗69卜例如電弧ί 於另一電弧喷塗,其係使用銘(按照規格115-0卜148): ΐ=;塗也可以對其他表面進行喷砂,且也可以對其他 座遮二本7f。明 ™的底表面 的頂表面710b。底環730彳ίίΡ的外表面73〇c和頂環710 和外表面730。底環<730 = 矣底表面,連接於内表面施 面720d。 " 、 面730a連接於本體部720的底表 徑752。頂環的厚度717;大約為298. 0刪的内 大約為306. 〇mm ;内^^度大約為3. 0腿,·外徑741 級部750,其具有大約為3· 包含環形梯 徑淡;大約為298為的内;:==3約為瓢-的外 大約為20度的斜坡75〇 U52,斜面753,該斜面753具有 727 ; 341. δπιπι 長度761;大約為347 〇m 形槽760,其具有大約為7. 5麵的 為347· 〇麵的外捏船大約物.5咖的内徑763。 1332996 727 A; 351- 邻72〇3以1^^3半枚大約為1〇.5麵的圓弧尾端612。本體 i用半徑大:為二=:::Ί725。頂環710可以 謂可晰繼:^===讀謂。底 η 實施例+,晶座遮蔽罩44包含單一塊的材料。例如,下 側遮蔽罩43可以製造成—整塊的材料 :曰:座遮蔽罩44包含大約為82.。咖的高度7〇1。或|鋼晶(座^ 可以^含不_傳導性材料和具有不_高度。可輯外表^ 20c外表面730c、了員表面7l〇b、内表面7l〇a、及底環730之至 >、-部分的底表面73Gd ’進行喷砂79G。例如,該喷砂可以 ,整個表面上賴最小4-5«平均喊(_ghness average, Ra) ° ’ 要製造各遮蔽罩,可以更包含至少如下所述之一種步驟:在 一個或更多個的表面上進行表面陽極處理;在一個或更多個的表 面上進行喷塗(spray coating);對一個或更多個的表面進行電 漿電解氧化。喷塗可以使用ΜΑ、氧化釔(Y2〇3)、Sc2〇3、Sc2F3、 、LaA3、Ce〇2、EmO3、DyOa中之至少一種。處理金屬成分和進 行噴塗的方法,都是熟習表面材料處理的技藝者所習知的。 熟習本項技藝者,都能察知在此所述之本發明的應用是多變 的,在此僅是以示例的實施例來說明本發明,且在不脫離本發明 的原則下,可以對於該等實施例施以添加和改變。因此,以下為 本發明之申請專利範圍。 … 【圖式簡單說明】 圖1為具體化本發明原理的離子化物理沈積處理設備的剖面 圖1A為圖1劃圈部分的放大圖,其圖示圖i裝置之遮蔽罩之 一部分的另一替代結構。 19 1332996 34 :壁邊框 36 :環狀肩部 38 :環形塊 40 :遮敝罩組件 401 :高度 41 :桶狀遮蔽罩 410 :頂環 410a :内表面 410b :頂表面 410c ··外表面 411 :内徑 412 :外徑 41a :夾钳部 42 :上側源部遮蔽罩 420 :傾斜環 420a :内表面 420c :外表面 421 :角位移 422 :平坦表面 424 :距離 425 :曲表面 426 :曲表面 427 :外徑 42a :夾鉗部 43 :下側遮蔽罩 430 :底環 430a :内表面 430c :外表面 430d :底表面 21 1332996 431 :斜角特徵部 431 :厚度 432 :距離 436 :曲表面 43a :夾鉗部 44 :晶座遮蔽罩 440 :安裝元件 440b :配合表面 440c :外表面 440d :底表面 440e :下侧表面 441 :外徑 442 :外徑 443 :距離 450 :開槽 451 :圓 452 :長度 453 :寬度 454 :彎曲端部 455 :角位移 46 :凸緣 460 :孔 461 :角位移 462 :角位移 464 :圓 470 :孔 48 :下側凸緣 490 :喷砂 491 :電弧喷塗 1332996 51 :箭頭 510 :凸緣 510b :頂表面 510c :外表面 510d ··表面 512 :曲表面 52 :間隙 520 :本體部 520a :内表面 520c :外表面 520d :底表面 53 :箭頭 530 :削除部 532 :長度 533 :深度 534 :角位移 535 :角位移 54 :箭頭 55 :間隙 550 :開槽 551 :圓 552 :長度 553 :寬度 554 :彎曲端部 555 :角位移 56 :間隙 560 :孔 561 :角位移 562 :角位移 1332996 564 :圓 57 : 間隙 570 :對準孔 572 i長度 573 •深度 574 圓弧角 580 ‘對準特徵部 586 角位移 590 喷砂 591 電弧喷塗 61 : 定位導銷 610 頂環 610a :内表面 610b :頂表面 610c :外表面 612 申請 612 圓弧尾端 613 圓弧角 615 内徑 616 外徑 617 高度 62 : 對準導引 620 本體部 620b :頂表面 620c :外表面 620d :底表面 630 底環 630a :内表面 630c :外表面 1332996 630d :底表面 631 :圓弧尾端 632 :圓弧角 633 :圓弧角 635 :内徑 636 :厚度 637 :高度 660 :孔 664 :圓 670 :孔 671 :距離 672 :距離 674 :圓 675 :孔 676 :角位移 690 :噴砂 691 :電弧喷塗 70 :燈 701 :高度 710 :頂環 710a :内表面 710b :頂表面 710d :底表面 717 :厚度 720 :本體部 720a :内表面 720c :外表面 720d :底表面 725 :圓弧尾端 1332996 726 :圓弧尾端 727 :外徑 730 :底環 730a :内表面 730c :外表面 730d :底表面 733 :内徑 738 :傾斜邊緣 740 :環形槽 741 :外徑 742 :徑 750 :環形梯級部 751 :高度 752 :内徑 753 :斜面 754 :斜坡 760 :環形槽 761 :長度 762 :外徑 763 :内徑 790 :喷砂
Claims (1)
- |公告本 99年S月'日修正替換頁 93124825fStW) 申請專利範圍: 料源(15)與能量源(20f,隸!^^可移動式頂侧部(33)中之材 該上侧源部遮蔽罩(42)包含保護_多動式棚部(33)免受沈積, 圓柱、截頭圓錐狀(fmSt(>C〇niCal)傾斜環(420)、 回柱,底%(430)、及大致平面狀安裝元件(44〇); 面(4=柱形頂環(41G)具有内表面_a)、頂表面(働) 、及外表 包含内表卿㈣接於該圓 城頭圓雖 ㈣=====包含外表面陶,連接於該圓 狀傾卜外表面(430c)’連接崎 &含了絲叫),繼刻柱形底 ㈣該陳形頂環(41G)之軸表面(她)、該截頭圓錐 ί f ()之該内表面(42〇a)、及該圓柱形底環(43〇)之該内表 面430a)形成連續式内表面,以及利用該圓柱形頂環之該外表 面(41〇c)、該截頭圓錐狀傾斜環(42〇)之該外表面(42〇c)、及該 形底環(430)之該外表面(43〇c)形成連續式外表面;及 該安裝元件(440)係配置於該截頭圓錐狀傾斜環(42〇)之該外表 面(420c)J^,並且具有底表面(44〇d)及配合表面(44%),該安裝元 件(440)之δ亥底表面(44〇d)與該截頭圓錐狀傾斜環("ο)之該外表面 (420c)之下侧部鄰接,該安裝元件(44〇)之該配合表面(44〇b)盥該截 頭圓錐狀傾斜環(420)之該外表面(420c)之上側部鄰接,用於盥該冷 卻和接地的處理室牆壁(14)之該可移動式頂側部(33)形成緊密 27 ' 1332996 99年ό月 <日修正替換頁 93124825Γ 無劏钹) 將Ϊ上側源部遮蔽罩(42)支持於該接地的處 回土 -、中該文裝元件(440)包含多數的貫穿孔(46〇)及 ,鮮貫穿孔(働)及該㈣储該配合表面 (440b)延伸至該底表面(44〇φ。 2.如申請專利範圍第1項之上側源部遮蔽罩(42),且中,該下 係連接於該安裝讀_之該底表面(44Gd)和該圓 柱形底環(430)之該外表面(43〇c)。 3·如申請專利範圍第丨項之上側源部遮蔽罩(42),其中,該上 側源部遮蔽罩(42)係由單一塊的材料所製造。 料係2 第3項之上娜部遮卿2),其中,該材 、5.如申請專利範圍第丨項之上側源部遮蔽罩(42),其中,該上 側源部遮蔽罩(42)包含至少大約為1164111蝴高度(4〇1)二 6. 如申請專利範圍第1項之上側源部遮蔽罩(42),其中,每個 該貫穿孔(460)的直徑至少大約為25 4mm。 7. 如申請專利範圍第6項之上侧源部遮蔽罩(42),其中,該等 貫穿孔(460)係配置在直徑大約為56Qm___圓(464)上,其角位移 (46卜462)為大約40.3度及大約9〇度。 8·如申請專利範圍第1項之上側源部遮蔽罩(42),其中,該開 槽_配置在直徑大約為584.7随的一圓㈣上,並具有大約^ 37.5度的角位移(455)。 28 99年 < 月日修正替換頁 93124825(無劏線) 9.如申请專利範圍第8項之上侧源部遮蔽罩(42),其中,該開 槽(450)具有至少大約為4mm的長度;至少大約為5mm的寬度。 I办1〇.如申請專利範圍第1項之上側源部遮蔽罩(42),其中,該 2牙孔(460)配置在直徑至少大約為586.7mm的一圓(464)上,該貫 牙孔(460)具有大約為5mm的直徑。 〇 Π.如申請專利範圍第1項之上側源部遮蔽罩(42),其中,該 圓柱开/頂環(41〇)包含至少大約為372.8mm的内徑(411)、和至少大 約為380.9mm的外徑(412)。 如申請專利範圍第1項之上側源部遮蔽罩(42),豆中,該 截頭圓錐狀傾斜環(420)包含大約為1245度的角位移(421)/'。 ° .13.如申請專利範圍第1項之上側源部遮蔽罩(42),其中,該 圓柱形底環(430)包含大約為撕咖的外徑(427)、和至^大約為 6.3mm的厚度。 —14.如申請專利範圍第丨項之上側源部遮蔽罩(似),其中,該 包含至少大約為6G5.Gmm的外徑_、和至少大約 兮圓^开範圍第1項之上側源部遮蔽罩(42),其中,對 二„壤(41())的該内表面(41Ga)、該頂表面㈣的、及至少一 (410c);該截頭圓錐狀傾斜環(42〇)的該内表面 兮进1^=申請專利範圍第3項之上側源部遮蔽罩(42),其中,對 錢頭0錐狀傾斜環(420)的該内表面(420a);該圓柱形底環_ “32996 99年6月!^日修正替換頁 _93124825(^»1^ =内表面(43〇a)、該外表面(43〇c)、及該底表面(43〇d)進行電弧 面(430c)、及該底表面(430d)。 a)、該外表十一、圖式: 1332996 4S4IS). 第93124825號專利申請案中文專利說明書及申請專利範 98夺背 七、指定代表圖·· 補充 (一) 本案指定代表圖為:第(1)圖。 (二) 本代表圖之元件符號簡單說明: 10 :裝置 11 :處理室 12 .晶圓 13 .晶座 14 :牆壁 15 :離子化丨賤鑛材料源 % 16 :靶材 17 :開口部 18 :大氣 20 :能量源 21 :線圈 22 :匹配網路 23 :窗部 25 :電漿區域 30 :沈積檔板 31 :開槽32 :下側部 33 :頂側部 34 :壁邊框 36 :環狀肩部 38 :環形塊 40 :遮敝罩組件 41 :桶狀遮蔽罩 41a :爽钳部 42 :上側源部遮蔽罩 42a .炎甜部
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JP2007503118A (ja) | 2007-02-15 |
KR101107909B1 (ko) | 2012-01-25 |
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