TWI330865B - Method and apparatus for cleaning a substrate using non-newtonian fluids - Google Patents

Method and apparatus for cleaning a substrate using non-newtonian fluids Download PDF

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TWI330865B
TWI330865B TW095121227A TW95121227A TWI330865B TW I330865 B TWI330865 B TW I330865B TW 095121227 A TW095121227 A TW 095121227A TW 95121227 A TW95121227 A TW 95121227A TW I330865 B TWI330865 B TW I330865B
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Taiwan
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substrate
flow
newtonian fluid
processing chamber
cleaning
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TW095121227A
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TW200721280A (en
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Larios John M De
Mike Ravkin
Jeffrey Farber
Mikhail Korolik
Fred C Redeker
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Lam Res Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/003—Cleaning involving contact with foam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0014—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by incorporation in a layer which is removed with the contaminants
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Description

1330865 九、發明說明： 【發明所屬之技術領域】 本發明係_清理基板的方法與賴，尤其是 體來清理基韻綠與設備。 、則非牛頓流 【先前技術】 在整個+1體裝置製序+，彳綺半導體 導體晶圓表面移除微粒（例如來自沉積系統之污染）。假如 微ΐ將污染半導體晶圓，造成半導體晶圓上ίΐΐ 中被重多t 步ΐ理操作係定義了在整個製造程序 =半 體== 私序係利用大量水來移除僅極少量之污染物βI體而+ =
t情況係由於水之牛頓性質所致。圖i係水之剪“ C 示，以权t缝補錢力Hi胃m所 =便=㈡ί = 1〇1，因此，施加於水之任何有限剪 應力之’水具有最小或 d pomt)，此降伏點為在水中起始流動所需之最小外力。(y 圖2係就半導體晶圓表面202上之水、ώ& @ 如圖2所示，由於水實際上不且古=水机所繪之速度流輪廓。 表面相接網夕m2 t 有降伏點，與半導體晶圓2〇2之 产辦加命户丨广二2上為〇’且在離該半導體晶圓越遠處速 愈多。因此’在與料體晶圓202之表面接觸點處; 貝上疋停滯不動的。由於恰在半導 ^ Μ 未在移動，HUbimjc流將^ f的水並 機制。因此，吾人需要大導體Ba51表面處之微粒移去之 火仙·，以在半導體晶圓202之表面處 建立任何顯者的速率，以使微粒可自表 ^ 有鑑於前述’有鮮提贱有料地_频來清理半導體 晶圓的方法與設備。 【發明内容】 足這ί:之五藉由提供清理基板用之方法與設備來滿 式_可就包含方法、系統、或裝置之各種方 明。町觀日林發批數個鑛實施例。 方法ΐ，伤第「實施態樣，係提供基板之清理方法。在此 出夷济。y牛頓流财動’其巾至少—部份流動係呈現 現了將微粒自基板表面移除，將該基板表面置放成盘呈 5ΐ流動部分相接觸’使呈現塞流之_部分在ϊί忒 方法it實施態#，係提供基板之清理方法。在此 室中，1'目2 少—部份呈現塞流。將基板置入處理 板上移除ίί 流動部分在基板表面上鷄，而能夠自基 ，據之第二貫施態樣’係提供基板之清理方法。在此 板表 ;,;ϊϊ的部分罐忑流 方法中，係提供雜;：：=：： 暴板之清理方法。在此 面上方。Λ7" ’且觸細單元設置於基板表 方在她用早凡表面與基板表面之間施加一非牛頓流， 在基板表面上移動’而能夠從基板表面移除微粒 第四實施態樣，係提供基板之清理設備。該設 一細用早兀，用以被設置於基板表面上方，且係用以接收 兮ί施用單元能夠將非牛頓流體施加於表面，以在 呈建立非牛頓流體流動。該流動有-部分 粒。机。’瓜在該表面上移動，而能夠自該表面移除微 備包ί據實施紐，係提供基板之清賴備。該設 3處係具有一導管形式之腔室。該導管能夠傳送- 1330865 ^牛頓流體流動’使該流動之—部份呈現塞流^再者，該處 賴基板，俾使該餘在基板表面上移細能夠自基板 t發明之其他實絲樣與優點將由以下詳細之說明、連結所 附圖不、及㈣範例之說明而使本發明之原理變得更加清楚明白。 【實施方式】 清理基板之方法與設備的發l，此將令 j此項技π者h楚明瞭：本發縣可不限於這些特定細節之 i 以實施。在其他例子中，習知處理步驟並未依順序 砰加說明以免不必要地限制本發明。 非床實，係提供清理基板之方法與設備。基本上， fWU具有趙錢動之能力並可利絲清理基板。如 詳細說明者’係提供非伟流體之流動，且職動之至少八 了f理基板，可將基板置放成與呈現塞流之流動： 呈現塞流之流體的部嫩_反表面。在另一實二u 板被浸入呈現塞流之非牛頓流體的流動中。、土 ㈣=明之—實施例之非牛頓流體的剪應力與應變 拉廿;:目脚心1"體係為—流體，當所施加之剪應力趨近於0 =里占30^。Ί而言，如圖3所示，非牛頓流體係由具有一降 ϋΐϋ特跑匕’此降伏點係非牛頓流體中起始流動 固體與液體兩端之間的中間範圍。該軟凝體係可輕f 地變形，且該軟凝體之鮮包含乳化液、膠體、泡料g質。吾 不互溶液體之混合物’例如牙膏、美乃兹二 在水中專，膠體係在水中分散之聚合體，明谬 泡珠係定祕㈣基質巾之氣泡，且刮職可例’ 仅—實酬，在紐室岐料頓流體之 基抓用的連度W輪廓。在此實施射，處理室係為—導管形式， 7 1330865 圖4並顯示該導管之任意區段之速度流輪磨。流經該導管之 頓流體具有一降伏點，其係大於施加至整個導管直徑4〇4之非 f流體的剪應力。因此’該全部流量£現塞流狀態。塞流係藉由 二平面速度流輪廓加以定義，其中該流速為實質上均勻狀態。換 ^之、，由於塞流，大部分非牛頓流體材料以實質上相同之^通 仃經過，管，使得該塞流具有橫跨導管直徑4〇4的均勻速度。因 此，與官壁402接觸之非牛頓流體之速度趨近於導管中間之非牛 頓流體的速度。塞流因此可在或接近管壁4〇2附近產生高速 • 頓流體。 丁 *圖5係根據本發明之一實施例，在處理室内之非牛頓流體之 擊塞的另-速度流輪廓。處理室係為__導管形式，圖5並顯示 ，導管之任意區段之速度流輪廓。在此實施例中，施加至流經導 管之非牛頓流體的剪應力，超過該流體之某些部分的非牛頓流體 ^降伏點。其中剪應力超過該降伏點之流體的部分呈現非塞流狀 態(亦即牛頓流體）。非塞流係藉由速度梯度加以特徵化，其中該流 體速度自塞流之部分遞減至管壁402之區域。換言之，降伏點大 於^應力之流體的部分呈現塞流狀態。如圖5所示，速度流輪廓 ，示非牛頓流體之流動具有不同流體特徵。塞流並未經由全部導 管直，404而加以獲得。具體而言，靠近管壁4〇2之流體的部分 φ 502呈現非基流狀態’其特徵在於具有拋物線形狀之速度流輪廓的 速度梯度。反之，塞流則具有一平坦狀速度流輪廓，且在流速流 梯度之間的部^ 504處呈現出來。圖5顯示：呈現塞流之流體部 分^04的速度高於呈現速度梯度之流體部分5〇2者。因此，在圖5 之實施例中，速度在呈現塞流之流動之該部分5〇4處為最高。 吾人應瞭解：並非所有非牛頓流體皆呈現塞流狀態。多種因素 (如所施加之剪應力、非牛頓流體之性質等)決定非牛頓流體是否以 塞流，動。例如，流動與塌陷迅速之泡沫(非牛頓流體)並未具有任 何顯著機械強度。如此快速排流之泡沫實際上未具有降伏點，且 不太可能以塞流流動。反之，一具有高降伏點之高品質泡沫流動 8 1330865 ’並能不魏地轉其完整度，將能以塞流流動。有許多種 ，用以增高非牛頓流體之降伏點。例如，可湘較^的氣泡以 :尚泡沐之降伏點。此外’以泡珠形式來增加介面活性劑的量及/ ，使用不同介面活性劑，可限舰沫之流動，因而增高泡珠之降 點 巧點。可添加額外之聚合物或其他黏合材料以增高泡珠之降伏 机並降低液體自泡沫流動之速率0 . 圖6係根據本發明之-實施例，清理基板狀方法之高階概 ，的流程®。基板係為任意適合之基底材料^在_示範性實施 j中，基板為-半導體晶圓，其係—薄片半導體材料，如一石夕晶 體’其上之微電路係藉由擴散與各種材料之沉積而加以建構。在 攀示範性實施例中，基板係為—硬碟缝，其係以具有一磁性 μ質塗層之圓、剛性盤所組合而成。自步驟6〇2開始，係提供一 ^牛頓流體之流動，且該流動之至少—部分呈現塞流狀態。在步 $ 604 t祕板表面魏成餘現麵找流紅該部分相接 使祕流在基板表社移動’而_自基板移除微粒。將 二板表面置放，接継現塞流之麟動之該部分，因為該流動之 具有最兩料。實際上，基板表面係設置在該流體具有最 快^速之部分處。該非牛頓越之高速流動，係與在基板表面上 ^微粒較快速碰撞及增大的碰撞頻率相_，因而在基板表面處 • 磨擦力。高速度與所產生之高摩擦 板表面移除微粒。 ^ 圖7係根據本發明之—實補，清理基板狀設備的簡化透 7所示，設備係一施用單元704，用以被設置在基板 2表面上方。在圖7之實施例中，施用單元7〇4並未產生非牛頓 U經由任意適當數目之人口導管接收該非牛頓流體，該入 二、應該非牛頓流體。施用單元704將非牛頓流體施加至 ΪΪ，”面’以在施用單元與基板表面間建立非牛頓流體之 施例中，施用單元可為一近接頭，其用以設置成接 近於基板702之表面。該近接頭在構造上不必然為「頭」的形式， 9 1330865 但可為任意適合之構造、形狀及/或尺寸，例如，氣體歧管、圓形 盤、條狀物、方形物、橢圓盤、管狀、盤狀物等，只要接近程度 能夠施加非牛頓流體即可。在一實施例中，該近接頭可為如圖1 所示之圓形盤的類型。近接頭之尺寸可根據所期望之應用而加以 變化成任意適當尺寸。近接頭上之更多資訊，請參照2002年9月 3〇曰提出申請、美國專利申請案第10/261839號，發明名稱為 「Method and Apparatus for Drying Semiconductor Wafer Surfaces
Using a Plurality of Inlets and held in Close Proximity to the Wafer Surfaces j 〇 〜圖8係圖7所示之施用單元的剖面側圖。如圖8所示， ^兀704之表面係設置於基板7〇2之表面上。施用單元 由二頂，人口料接收非牛頓流體，且該施用單補、在施用單元 ίίίι、基板7G2之表面間施加一非牛頓流體之流動。該非牛頓 施用皁元7〇4之中心至施用單元之外侧邊緣以輕射2 =卜：出’且因此使該流體之方向係實質上平 二加說明者，在施用單元7⑽之表面與基板7〇2 ΐί 部分呈現塞流，俾使該塞流在基板表面上務i 任人表面上移除微粒。該流體速率可為能夠提供夷产之 速率。例* ’在一實施例中，流體速率具有自約o:L / 巧lOOmm/s的範圍。如在此所使用之 :. 疋施加而言，指定之尺寸或參數可在 丄.就-既 在一實施财，可接受之公祕±1〇%。 Α内加以變化。 之：:5==以牛頓流體施加至基請 段。例如，施用單元7G4可夠處理基板之所有區 之邊緣。可採用其他實施例，“ 中爾免移 方式自基板之邊緣移至域杯毐?㈣早70 7〇4可以直線 非直線之移動，例如，反之另—側。可採用其他 4射祕方式、以圓形移動方式、以盤 1330865 =ί;ί形:理固f壁板⑽。處理室 對向設置之於中 处*至/、有輸入端1116及與輸入端呈 第-開口加二ΐ i7°輸入，1116係藉由能夠接收基板702之 加以1 義。輸出端則藉由能夠輸出基板702之第二開口 -開ί ;·=封sn'13°，其係接近於輸入端之第 係用含轉在=1壁+面中之_祕輸入埠1132 -實施例中 之如一圖宽 室t。在圖ΗΑ至C之實施例中，t4 ==== 係設置於處理室之頂邱，而/Ϊ見圖f不輸入埠1132其中-者 於入接頂4另—輸人埠則設置於處理室之底部。 ^體之反向、、ΐ皮此ί對，置’以建立來自頂部與底部之非牛頓 加外力，使i板二在基Ϊ之反向表面上施 可包含一輸入埠或超過兩者以上之輸入Ϊ。 期望之、接近輸人端1116之方式加以設置，因為 輸出端1117。但是應瞭解:輸入琿 適合位置’以建立不同流體特徵。 前A至c ’在將基板702設置於設備ι_之處理室 月」’-非牛頓流體之施用器將非牛頓流體 ^ 中充滿該非牛頓流體。==ΐ 頓机體之後，經由輸入端1116之第一開口二 2中。基板702係以懸浮於非牛頓流體中而加二設置。^士丄处 ίΐΛ2ί浸濕於非牛頓流體中1並未接觸於處理室壁面'今 ϊί Γΐίΐΐϊΐ板702之能力，因此使基板懸浮於處理ϊ 中間。即使在〉又有&動的情形下，非牛頓流體可幾乎不受限地 12 1330865 支撐基板7〇2 ’因為基板之重量小到足以使基板停留在非 上，而不超過該非牛頓流體之降伏點。 _ 在將基板702設置於處理室後，便關閉接近輸入端⑴ 二，口的壁板113G，以便封住第—開σ。非牛頓流體之施用哭^ 著迫使額外之非牛·體進人處理室巾，以建立非牛頓流體^ 2。，於非牛頓流體不能經由輸人端U16之第—開口流出，細= 輸入埠1132所施力之該非牛頓流體將自輸人端流向輸出端^由 以在輸出鈿之第二開口處流出。該流動方向係實質上 7日如以下將詳為說明者，流動之一部份呈現塞 土板係e又置於處理室内’俾使該塞流在基板702表 而能夠自基板雜難。 ㈣上移動 為了使流體在基板702之表面上移動，將基板固定於處 :設備101G之實施例可在處理室中包含更多固定銷⑴2。 ^用固定銷1112接收基板702之邊緣以避免基板之水平移動。 ，圖11AS 11B之實施例中，當非牛頓流體流經處理室時 = 1112設置成接近於輸出端1117’以避免基板7〇2移動通過輸 出^之第二開α處。當促使非牛·體流經料時 2 基板702。為了允許基板7〇2之水平移動，固== ^其Γ㈤基板之固定H以允許料頓流體之流動沿導管移 3基板二並自輸出端m7之第二開口處移出。例如，在—實施 中，固定銷1112會下降以允許基板7〇2之移動。 、 圖12A至12B係根據本發明之一實施例，通過圖1〇 μ 室i非牛頓流體之不同流細的不同速度流。 中流，理室之非牛頓流體具有—降伏點，該降伏點=於 理室之自度1204之所施加至非牛頓流體的剪應力。·因此： 施例中’大量流體呈現塞流。換言之，該塞流延伸達到約 量。因此’如圖以所示’該流體之速度流輪· 圖UB係根據本發明之一實施例，通過處理室之非牛頓流體 13 1330865 金屬將在或靠近表面處產生高速。該高速等同 量傳送，因而減少用來塗佈該表面之流體 現塞流之其中將呈 移除被姓刻之材料。予°。)之^動施加於基板表面上’以 清理面上：方法與設備。為了 動。就相同質量傳壬現塞流之非牛頓流體之流 有較高流速來清理基板^流在基板表面所 ΐ ΐ頓流體所建立之幾可忽略的摩擦力高出約若 使用牛頓t使用呈現塞流之料頓流體來清理基板比 率，因為與牛頓流之使用相較時，可使用較 之非牛頓w體來達成相同清理效應。 有通些實補已詳細制於此’但於此項技藝具 中，以各種盆抽、I月白:本發明可在不脫離本發明之精神或範疇 視為說明性而非實 = 月因故此不”本範例與實施例 ^ ^ β άΓ/-^ ，]|1者且本發明並不限於在此所提供之細 即而疋了在所附專利申請範圍中進行修改與施行者。 【圖式簡單說明】 圖不之相同參考符號代表相同之結構裝置。 圖1係水之剪應力與應變關係圖。 圖2，為半導體晶圓上之水流用的速度流輪磨。 的關Κ係根據本發明之一實施例之非牛頓流體的剪應力與應變 塞流發明之一實施例’在處理室内之非牛頓流體之 塞：一實施例，在處理室内之非牛頓流體之 圖6係根據本發明之一實施例，清理基板用之方法之高階概 15 丄：5JUe50：) 觀流程圖。 視圖?係根據本發日月之—實施例，清理基板用之設備的簡化透 的剖面側視圖。 表面盘其Μ 月貫蝴’在圖7與圖8中所示之設備 ϊ 的料頓流體之流誠之速度流輪靡。 單透視圖、根據本發明之—實施例’清理基板用之另—設備的簡
理美f :1A s c係根據本發明之—實施例而顯示圖10所示之清 理基板用之設備的各種Μ且更詳細之視圖。 SM1圖?】Α至12Β係根據本發明之一實施例，對於通過圖10與 之處理室之不同非牛頓流體之流動的不同速度流輪廊圖。 【主要元件符號說明】 302〜降伏點 402〜管壁 404〜直徑 502〜部分 504〜部分 602〜提供一非牛頓流體之流動 604〜將基板之表面置放成與呈現塞流之該流動之一部分 702〜基板 704〜施用單元 706〜間隙 1010〜設備 1004〜處理室 1112〜固定銷 1116〜輸入端 1117〜輸出端 1130〜壁板 1330865 1132〜輸入埠 1202〜間隙 1204〜高度 1206〜部分

Claims (1)

1330865 99年4月8日修正替換頁 95121227〔無劏绫)' 十、申請專利範圍： 1· 一種基板之清理設備，包含： _ 非具有導管形式之腔室，該導管能夠傳送一 非牛頓飢體之^動’俾使該流動之—部份呈現 該基板，俾使該塞流在該之二:動， 轸面?除Ϊ粒’其中該處理室具有-輸入端與- 端定義能夠輸出該基板之第二開口； 該輸出 -，定銷，位於該處理室中’靠近該第二開口 1该基板之該表面上移動時，定銷制以接收該基& 之邊緣以避免該基板之移動；以及 開口 壁板，接近該第一開口，用以封住該第一 2.如申請專職圍第丨項之基板之清理設備，其巾在 ^之室壁與該基板之該絲間之間隙，其高度在約 10mm之範圍。 κ 3·如申請專利範圍第1項之基板之清理設備，更包含： 一輸入埠，位於該處理室之室壁中，該 該非牛頓流體運送入該處理室内。 干^用以將 4. 一種清潔基板之方法，包含·· 以一非牛頓流體填滿一處理室，該處理室具有一輸入端 與一輸出端；將該基板從該輸入端置入該處理室中， 基板懸浮在該非牛頓流體中； 關閉該輸入端； 迫使額外之非牛頓流體經過該處理室，俾使該非 體之一流動將該基板移動往該輸出端，·及 18 基板ίίΪίΪΐΐ牛頓流體時，啟動一固定銷，以阻擋該 中，該非牛頓，與該基板的—邊緣接觸，其 輸出端C M板的表面’且該非牛頓流體從該 5.如二青專利範圍第4項之清潔基板之方法，更包含： 該處理332伟流體流經過該處理室時，防止該基板在 鲁 99年4月8曰修正替換頁 95121227(無劃線） 6’如申請專利範圍第4項之清潔基板之方法，更包含： 解開該固疋銷，以谷許該基板從該輸出端移出。
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TW200721280A (en) 2007-06-01
MY159175A (en) 2016-12-30
US8043441B2 (en) 2011-10-25
CN1897220A (zh) 2007-01-17
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