TWI317853B - Chemically amplified positive resist composition and patterning process - Google Patents

Chemically amplified positive resist composition and patterning process

Info

Publication number
TWI317853B
TWI317853B TW095105465A TW95105465A TWI317853B TW I317853 B TWI317853 B TW I317853B TW 095105465 A TW095105465 A TW 095105465A TW 95105465 A TW95105465 A TW 95105465A TW I317853 B TWI317853 B TW I317853B
Authority
TW
Taiwan
Prior art keywords
resist composition
patterning process
positive resist
chemically amplified
amplified positive
Prior art date
Application number
TW095105465A
Other languages
English (en)
Other versions
TW200636391A (en
Inventor
Youichi Ohsawa
Kazunori Maeda
Satoshi Watanabe
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of TW200636391A publication Critical patent/TW200636391A/zh
Application granted granted Critical
Publication of TWI317853B publication Critical patent/TWI317853B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW095105465A 2005-02-18 2006-02-17 Chemically amplified positive resist composition and patterning process TWI317853B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005041587A JP4420226B2 (ja) 2005-02-18 2005-02-18 化学増幅ポジ型レジスト材料及びパターン形成方法

Publications (2)

Publication Number Publication Date
TW200636391A TW200636391A (en) 2006-10-16
TWI317853B true TWI317853B (en) 2009-12-01

Family

ID=36913117

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095105465A TWI317853B (en) 2005-02-18 2006-02-17 Chemically amplified positive resist composition and patterning process

Country Status (4)

Country Link
US (1) US7335458B2 (zh)
JP (1) JP4420226B2 (zh)
KR (1) KR100938529B1 (zh)
TW (1) TWI317853B (zh)

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WO2008029673A1 (fr) * 2006-09-08 2008-03-13 Jsr Corporation Composition sensible au rayonnement et procédé de fabrication d'un composé de faible masse moléculaire destiné à être utilisé dans ladite composition
US7569326B2 (en) * 2006-10-27 2009-08-04 Shin-Etsu Chemical Co., Ltd. Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process
JP4854023B2 (ja) * 2007-02-05 2012-01-11 兵庫県 感光性組成物
JP5039622B2 (ja) * 2007-03-30 2012-10-03 富士フイルム株式会社 ポジ型レジスト組成物及びこれを用いたパターン形成方法
JP4905250B2 (ja) * 2007-05-18 2012-03-28 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP5276805B2 (ja) * 2007-07-02 2013-08-28 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP5285897B2 (ja) * 2007-12-11 2013-09-11 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
US8034533B2 (en) * 2008-01-16 2011-10-11 International Business Machines Corporation Fluorine-free heteroaromatic photoacid generators and photoresist compositions containing the same
JP4575479B2 (ja) * 2008-07-11 2010-11-04 信越化学工業株式会社 化学増幅型ポジ型レジスト組成物及びパターン形成方法
JP5290129B2 (ja) * 2008-12-25 2013-09-18 信越化学工業株式会社 化学増幅ポジ型レジスト組成物及びレジストパターン形成方法
JP5658920B2 (ja) * 2009-06-23 2015-01-28 富士フイルム株式会社 化学増幅型レジスト組成物、並びに、これを用いたモールドの作成方法、及び、レジスト膜
GB2501700A (en) * 2012-05-01 2013-11-06 Intelligent Energy Ltd Fuel cell stack assembly
JP5799137B2 (ja) * 2014-06-16 2015-10-21 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物、及び該組成物を用いたパターン形成方法
JP7106654B2 (ja) * 2018-09-01 2022-07-26 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、フォトマスク、電子デバイスの製造方法、及び化合物

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TW562998B (en) * 2000-12-07 2003-11-21 Shinetsu Chemical Co Production method for polymer compound and resist material prepared by using the polymer compound
JP3867778B2 (ja) 2001-07-05 2007-01-10 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP2003114523A (ja) 2001-08-02 2003-04-18 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
JP3907164B2 (ja) 2001-11-02 2007-04-18 富士フイルム株式会社 ポジ型感光性組成物
JP2003173023A (ja) * 2001-12-05 2003-06-20 Fuji Photo Film Co Ltd ポジ型感光性組成物
JP4025162B2 (ja) 2002-09-25 2007-12-19 信越化学工業株式会社 高分子化合物及びポジ型レジスト材料並びにこれを用いたパターン形成方法
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JP4009852B2 (ja) 2003-05-21 2007-11-21 信越化学工業株式会社 塩基性化合物、レジスト材料及びパターン形成方法

Also Published As

Publication number Publication date
KR20060093056A (ko) 2006-08-23
JP2006227331A (ja) 2006-08-31
JP4420226B2 (ja) 2010-02-24
KR100938529B1 (ko) 2010-01-25
US20060188810A1 (en) 2006-08-24
TW200636391A (en) 2006-10-16
US7335458B2 (en) 2008-02-26

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