TWI316095B - Plated substrate - Google Patents

Plated substrate

Info

Publication number
TWI316095B
TWI316095B TW095111454A TW95111454A TWI316095B TW I316095 B TWI316095 B TW I316095B TW 095111454 A TW095111454 A TW 095111454A TW 95111454 A TW95111454 A TW 95111454A TW I316095 B TWI316095 B TW I316095B
Authority
TW
Taiwan
Prior art keywords
plated substrate
plated
substrate
Prior art date
Application number
TW095111454A
Other languages
English (en)
Chinese (zh)
Other versions
TW200643215A (en
Inventor
Akihiro Aiba
Kazumi Kawamura
Hirofumi Takahashi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of TW200643215A publication Critical patent/TW200643215A/zh
Application granted granted Critical
Publication of TWI316095B publication Critical patent/TWI316095B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1646Characteristics of the product obtained
    • C23C18/165Multilayered product
    • C23C18/1651Two or more layers only obtained by electroless plating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/32Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/42Coating with noble metals
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/24Reinforcing the conductive pattern
    • H05K3/244Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0703Plating
    • H05K2203/072Electroless plating, e.g. finish plating or initial plating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0703Plating
    • H05K2203/073Displacement plating, substitution plating or immersion plating, e.g. for finish plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemically Coating (AREA)
  • Laminated Bodies (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
TW095111454A 2005-04-01 2006-03-31 Plated substrate TWI316095B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005105625 2005-04-01

Publications (2)

Publication Number Publication Date
TW200643215A TW200643215A (en) 2006-12-16
TWI316095B true TWI316095B (en) 2009-10-21

Family

ID=37114947

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095111454A TWI316095B (en) 2005-04-01 2006-03-31 Plated substrate

Country Status (6)

Country Link
JP (1) JP4926053B2 (fr)
KR (1) KR20070114391A (fr)
CN (2) CN101151399B (fr)
HK (1) HK1116838A1 (fr)
TW (1) TWI316095B (fr)
WO (1) WO2006112215A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007031740A (ja) * 2005-07-22 2007-02-08 Shinko Electric Ind Co Ltd 電子部品及びその製造方法
JP5288362B2 (ja) * 2007-01-17 2013-09-11 奥野製薬工業株式会社 多層めっき皮膜及びプリント配線板
JP5013077B2 (ja) 2007-04-16 2012-08-29 上村工業株式会社 無電解金めっき方法及び電子部品
DE602008005748D1 (de) * 2008-10-17 2011-05-05 Atotech Deutschland Gmbh Spannungsreduzierte Ni-P/Pd-Stapel für Waferoberfläche
JP5680342B2 (ja) 2009-09-02 2015-03-04 Tdk株式会社 めっき膜、プリント配線板及びモジュール基板
JPWO2011099597A1 (ja) * 2010-02-15 2013-06-17 株式会社Jcu プリント配線板の製造方法
CN102802364B (zh) * 2012-09-11 2014-11-05 深圳市和美精艺科技有限公司 一种在印刷电路板的导电层中设置金属钯层的方法及其层状结构
JP6466521B2 (ja) * 2017-06-28 2019-02-06 小島化学薬品株式会社 無電解めっきプロセス
US11114399B2 (en) * 2017-12-19 2021-09-07 Jx Nippon Mining & Metals Coproration Semiconductor wafer with void suppression and method for producing same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04307736A (ja) * 1991-04-04 1992-10-29 Canon Inc 微細多層構造半導体素子の配線方法
JPH081980B2 (ja) * 1993-11-25 1996-01-10 大日工業株式会社 プリント配線板及びその製造方法
JP2785102B2 (ja) * 1994-03-31 1998-08-13 株式会社ジャパンエナジー 無電解金めっき方法
JP3345529B2 (ja) * 1995-06-20 2002-11-18 日立化成工業株式会社 ワイヤボンディング用端子とその製造方法並びにそのワイヤボンディング端子を用いた半導体搭載用基板の製造方法
JPH09172236A (ja) * 1995-12-20 1997-06-30 Seiichi Serizawa プリント配線板
JPH10287994A (ja) * 1997-04-14 1998-10-27 World Metal:Kk ボンディング部のメッキ構造
JP2001358164A (ja) * 2000-06-13 2001-12-26 Ne Chemcat Corp 無電解多層めっき皮膜が形成された電極及びその製造方法
CN1143656C (zh) * 2001-01-10 2004-03-31 中国科学院上海原子核研究所 一种32p放射性血管支架及其制作方法
JP2003226993A (ja) * 2002-02-01 2003-08-15 Electroplating Eng Of Japan Co 金メッキ液及び金メッキ処理方法

Also Published As

Publication number Publication date
CN101942652A (zh) 2011-01-12
KR20070114391A (ko) 2007-12-03
WO2006112215A1 (fr) 2006-10-26
HK1116838A1 (en) 2009-01-02
CN101151399B (zh) 2010-12-29
JP4926053B2 (ja) 2012-05-09
CN101942652B (zh) 2012-06-27
JPWO2006112215A1 (ja) 2008-12-04
CN101151399A (zh) 2008-03-26
TW200643215A (en) 2006-12-16

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