TWI315584B - Display device and manufacturing method thereof - Google Patents
Display device and manufacturing method thereofInfo
- Publication number
- TWI315584B TWI315584B TW095139414A TW95139414A TWI315584B TW I315584 B TWI315584 B TW I315584B TW 095139414 A TW095139414 A TW 095139414A TW 95139414 A TW95139414 A TW 95139414A TW I315584 B TWI315584 B TW I315584B
- Authority
- TW
- Taiwan
- Prior art keywords
- forming
- electrode
- opening
- channel region
- barrier wall
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 230000004888 barrier function Effects 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/221—Changing the shape of the active layer in the devices, e.g. patterning by lift-off techniques
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050111023A KR20070053060A (ko) | 2005-11-19 | 2005-11-19 | 표시장치와 이의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200721508A TW200721508A (en) | 2007-06-01 |
TWI315584B true TWI315584B (en) | 2009-10-01 |
Family
ID=38052609
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095139414A TWI315584B (en) | 2005-11-19 | 2006-10-25 | Display device and manufacturing method thereof |
Country Status (5)
Country | Link |
---|---|
US (2) | US7638358B2 (zh) |
JP (1) | JP4675871B2 (zh) |
KR (1) | KR20070053060A (zh) |
CN (1) | CN100552924C (zh) |
TW (1) | TWI315584B (zh) |
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KR100870105B1 (ko) | 2007-04-25 | 2008-11-25 | 실리콘 디스플레이 (주) | 이미지 센서가 내장된 디스플레이 장치 및 그 제조 방법 |
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KR101439538B1 (ko) * | 2007-08-14 | 2014-09-12 | 삼성전자주식회사 | 보호막 형성용 조성물 및 이에 의한 보호막을 포함한유기박막 트랜지스터 |
JP2009059975A (ja) | 2007-09-03 | 2009-03-19 | Mitsubishi Electric Corp | フォトセンサーおよびx線撮像装置 |
US7855121B2 (en) * | 2009-03-27 | 2010-12-21 | Samsung Electronics Co., Ltd. | Method of forming organic thin film and method of manufacturing semiconductor device using the same |
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2005
- 2005-11-19 KR KR1020050111023A patent/KR20070053060A/ko not_active Application Discontinuation
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2006
- 2006-10-25 TW TW095139414A patent/TWI315584B/zh not_active IP Right Cessation
- 2006-11-14 CN CNB2006101448006A patent/CN100552924C/zh not_active Expired - Fee Related
- 2006-11-16 JP JP2006310696A patent/JP4675871B2/ja not_active Expired - Fee Related
- 2006-11-17 US US11/601,086 patent/US7638358B2/en not_active Expired - Fee Related
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2009
- 2009-09-16 US US12/561,218 patent/US8258004B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN100552924C (zh) | 2009-10-21 |
CN1967813A (zh) | 2007-05-23 |
KR20070053060A (ko) | 2007-05-23 |
US7638358B2 (en) | 2009-12-29 |
US20070114524A1 (en) | 2007-05-24 |
JP2007142427A (ja) | 2007-06-07 |
US8258004B2 (en) | 2012-09-04 |
TW200721508A (en) | 2007-06-01 |
US20100006832A1 (en) | 2010-01-14 |
JP4675871B2 (ja) | 2011-04-27 |
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