TWI313481B - Adhesive sheet for manufacturing semiconductor device, semiconductor device and manufacturing method using the same - Google Patents

Adhesive sheet for manufacturing semiconductor device, semiconductor device and manufacturing method using the same Download PDF

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Publication number
TWI313481B
TWI313481B TW093107894A TW93107894A TWI313481B TW I313481 B TWI313481 B TW I313481B TW 093107894 A TW093107894 A TW 093107894A TW 93107894 A TW93107894 A TW 93107894A TW I313481 B TWI313481 B TW I313481B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
adhesive sheet
manufacturing
component
adhesive
Prior art date
Application number
TW093107894A
Other languages
English (en)
Chinese (zh)
Other versions
TW200501208A (en
Inventor
Takeshi Sato
Akinori Sei
Original Assignee
Tomoegawa Paper Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tomoegawa Paper Co Ltd filed Critical Tomoegawa Paper Co Ltd
Publication of TW200501208A publication Critical patent/TW200501208A/zh
Application granted granted Critical
Publication of TWI313481B publication Critical patent/TWI313481B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/92—Specific sequence of method steps
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    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Laminated Bodies (AREA)
TW093107894A 2003-03-25 2004-03-24 Adhesive sheet for manufacturing semiconductor device, semiconductor device and manufacturing method using the same TWI313481B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003083795A JP4421204B2 (ja) 2003-03-25 2003-03-25 半導体装置製造用接着シート及びそれを用いた半導体装置並びに製造方法

Publications (2)

Publication Number Publication Date
TW200501208A TW200501208A (en) 2005-01-01
TWI313481B true TWI313481B (en) 2009-08-11

Family

ID=33399169

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093107894A TWI313481B (en) 2003-03-25 2004-03-24 Adhesive sheet for manufacturing semiconductor device, semiconductor device and manufacturing method using the same

Country Status (6)

Country Link
JP (1) JP4421204B2 (ja)
KR (1) KR100596186B1 (ja)
CN (1) CN100492586C (ja)
HK (1) HK1073178A1 (ja)
MY (1) MY140439A (ja)
TW (1) TWI313481B (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4538398B2 (ja) * 2005-10-31 2010-09-08 株式会社巴川製紙所 半導体装置製造用接着シート及び半導体装置の製造方法
JP4654062B2 (ja) * 2005-03-30 2011-03-16 株式会社巴川製紙所 半導体装置製造用接着シート及び半導体装置の製造方法
JP4863690B2 (ja) * 2005-10-31 2012-01-25 株式会社巴川製紙所 半導体装置製造用接着シート及び半導体装置並びにその製造方法
JP4505649B2 (ja) * 2006-03-23 2010-07-21 フジコピアン株式会社 固定シート
JP2009158817A (ja) * 2007-12-27 2009-07-16 Tomoegawa Paper Co Ltd Ｑｆｎ用熱硬化型樹脂組成物及びそれを用いたｑｆｎ用接着シート
KR20110087547A (ko) * 2010-01-26 2011-08-03 도레이첨단소재 주식회사 내열성 점착시트를 이용한 반도체 장치의 제조방법
JP5714349B2 (ja) * 2011-01-31 2015-05-07 ニッタ株式会社 易剥離性粘着シートおよび易剥離性粘着テープ
CN106574163B (zh) * 2014-08-08 2019-12-03 东丽株式会社 临时粘接用粘合剂、粘合剂层、晶片加工体及使用其的半导体器件的制造方法、聚酰亚胺共聚物、聚酰亚胺混合树脂以及树脂组合物
TWI732764B (zh) * 2015-06-01 2021-07-11 日商富士軟片股份有限公司 暫時接著劑、接著膜、接著性支持體、積層體及接著劑套組
CN108922854B (zh) * 2018-06-14 2020-06-05 中国电子科技集团公司第二十四研究所 一种用于封装硅基芯片的瞬态电路封装结构实现方法
JP7187906B2 (ja) * 2018-09-10 2022-12-13 昭和電工マテリアルズ株式会社 半導体装置の製造方法
EP4083159A4 (en) * 2019-12-23 2024-01-10 Nissan Chemical Corp ADHESIVE COMPOSITION, LAMINATE AND METHOD FOR PRODUCING SAME, METHOD FOR PEELING LAMINATE AND METHOD FOR PROCESSING SEMICONDUCTOR FORMING SUBSTRATE

Also Published As

Publication number Publication date
KR100596186B1 (ko) 2006-07-03
CN100492586C (zh) 2009-05-27
CN1622279A (zh) 2005-06-01
JP4421204B2 (ja) 2010-02-24
KR20040084680A (ko) 2004-10-06
JP2004296549A (ja) 2004-10-21
TW200501208A (en) 2005-01-01
HK1073178A1 (en) 2005-09-23
MY140439A (en) 2009-12-31

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