TWI311813B - Field effect transistor and method of manufacturing same - Google Patents

Field effect transistor and method of manufacturing same Download PDF

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Publication number
TWI311813B
TWI311813B TW092118872A TW92118872A TWI311813B TW I311813 B TWI311813 B TW I311813B TW 092118872 A TW092118872 A TW 092118872A TW 92118872 A TW92118872 A TW 92118872A TW I311813 B TWI311813 B TW I311813B
Authority
TW
Taiwan
Prior art keywords
distance
semiconductor substrate
segment
section
conductive
Prior art date
Application number
TW092118872A
Other languages
English (en)
Chinese (zh)
Other versions
TW200409359A (en
Inventor
Brech Helmut
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200409359A publication Critical patent/TW200409359A/zh
Application granted granted Critical
Publication of TWI311813B publication Critical patent/TWI311813B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
TW092118872A 2002-07-31 2003-07-10 Field effect transistor and method of manufacturing same TWI311813B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/209,816 US6870219B2 (en) 2002-07-31 2002-07-31 Field effect transistor and method of manufacturing same

Publications (2)

Publication Number Publication Date
TW200409359A TW200409359A (en) 2004-06-01
TWI311813B true TWI311813B (en) 2009-07-01

Family

ID=31187146

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092118872A TWI311813B (en) 2002-07-31 2003-07-10 Field effect transistor and method of manufacturing same

Country Status (7)

Country Link
US (1) US6870219B2 (https=)
EP (1) EP1525622A2 (https=)
JP (1) JP2005535113A (https=)
CN (1) CN1672263A (https=)
AU (1) AU2003281740A1 (https=)
TW (1) TWI311813B (https=)
WO (1) WO2004012270A2 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7652316B2 (en) * 2003-04-22 2010-01-26 Dsp Group Switzerland Ag Semiconductor transistor (DMOS) device for use as a power amplifier
WO2005022645A2 (en) * 2003-08-27 2005-03-10 Koninklijke Philips Electronics N.V. Electronic device comprising an ldmos transistor
US7501669B2 (en) 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
JP2007505505A (ja) 2004-01-10 2007-03-08 エイチブイブイアイ・セミコンダクターズ・インコーポレイテッド パワー半導体装置およびそのための方法
US9773877B2 (en) * 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
EP1635399B1 (en) * 2004-09-08 2011-05-04 STMicroelectronics Srl Lateral MOS device and method of making the same
US8530963B2 (en) 2005-01-06 2013-09-10 Estivation Properties Llc Power semiconductor device and method therefor
US11791385B2 (en) * 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
EP1921669B1 (en) 2006-11-13 2015-09-02 Cree, Inc. GaN based HEMTs with buried field plates
US8564057B1 (en) * 2007-01-09 2013-10-22 Maxpower Semiconductor, Inc. Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield
JP2009164651A (ja) * 2009-04-24 2009-07-23 Sanyo Electric Co Ltd 半導体装置
US8253198B2 (en) * 2009-07-30 2012-08-28 Micron Technology Devices for shielding a signal line over an active region
CN102237276B (zh) * 2010-04-22 2014-04-16 上海华虹宏力半导体制造有限公司 射频ldmos器件的制造方法
EP2383786B1 (en) * 2010-04-29 2018-08-15 Ampleon Netherlands B.V. Semiconductor transistor comprising two electrically conductive shield elements
JP2011249728A (ja) * 2010-05-31 2011-12-08 Toshiba Corp 半導体装置および半導体装置の製造方法
US20120175679A1 (en) * 2011-01-10 2012-07-12 Fabio Alessio Marino Single structure cascode device
JP5776217B2 (ja) * 2011-02-24 2015-09-09 富士通株式会社 化合物半導体装置
US8680615B2 (en) * 2011-12-13 2014-03-25 Freescale Semiconductor, Inc. Customized shield plate for a field effect transistor
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
JP6242118B2 (ja) * 2013-08-29 2017-12-06 オリンパス株式会社 スイッチ回路、サンプルホールド回路、および固体撮像装置
US9853145B1 (en) * 2016-10-04 2017-12-26 Vanguard International Semiconductor Corporation High-voltage semiconductor device and method of manufacturing the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56169368A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPS56169369A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPS58137256A (ja) 1982-02-10 1983-08-15 Hitachi Ltd 絶縁ゲ−ト半導体装置
US5119149A (en) 1990-10-22 1992-06-02 Motorola, Inc. Gate-drain shield reduces gate to drain capacitance
US5252848A (en) 1992-02-03 1993-10-12 Motorola, Inc. Low on resistance field effect transistor
US5898198A (en) 1997-08-04 1999-04-27 Spectrian RF power device having voltage controlled linearity
US5912490A (en) * 1997-08-04 1999-06-15 Spectrian MOSFET having buried shield plate for reduced gate/drain capacitance
US6001710A (en) 1998-03-30 1999-12-14 Spectrian, Inc. MOSFET device having recessed gate-drain shield and method
US6222229B1 (en) 1999-02-18 2001-04-24 Cree, Inc. Self-aligned shield structure for realizing high frequency power MOSFET devices with improved reliability
KR100282426B1 (ko) * 1999-03-17 2001-02-15 김영환 스마트 파워 소자 및 그의 제조 방법
KR100302611B1 (ko) * 1999-06-07 2001-10-29 김영환 고전압 반도체 소자 및 그 제조방법

Also Published As

Publication number Publication date
EP1525622A2 (en) 2005-04-27
US20040021175A1 (en) 2004-02-05
TW200409359A (en) 2004-06-01
US6870219B2 (en) 2005-03-22
JP2005535113A (ja) 2005-11-17
CN1672263A (zh) 2005-09-21
AU2003281740A1 (en) 2004-02-16
WO2004012270A2 (en) 2004-02-05
WO2004012270A3 (en) 2004-04-15

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