KR100302611B1 - 고전압 반도체 소자 및 그 제조방법 - Google Patents
고전압 반도체 소자 및 그 제조방법 Download PDFInfo
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- KR100302611B1 KR100302611B1 KR1019990020955A KR19990020955A KR100302611B1 KR 100302611 B1 KR100302611 B1 KR 100302611B1 KR 1019990020955 A KR1019990020955 A KR 1019990020955A KR 19990020955 A KR19990020955 A KR 19990020955A KR 100302611 B1 KR100302611 B1 KR 100302611B1
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- oxide film
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 18
- 230000005684 electric field Effects 0.000 abstract description 10
- 238000009826 distribution Methods 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 description 37
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- -1 arsenic ions Chemical class 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (6)
- 제1도전형의 반도체 기판(300)과;상기 반도체 기판(300)내 소정영역에 형성된 제2도전형의 웰(310)과;상기 웰(310) 상면에 액티브 영역(301a)을 제외한 부위에 형성된 다수의 필드산화막(301b)과;상기 웰(310)내에 상기 필드 산화막(301b)의 일측 끝에 위치한 액티브 영역내에 형성되고, 상기 필드 산화막의 에지와 소정 간격 떨어져 형성된 드레인 영역(303a)과;상기 드레인 영역(303a)을 감싸도록 상기 제2도전형 웰(310)내에 형성되고, 상기 드레인 영역(303a)과 같은 도전형의 불순물로 상기 드레인영역의 불순물 농도에 비해 낮게 도핑되어 형성된 드리프트층(304)과;상기 필드산화막(301b)의 다른쪽 끝에 위치한 액티브 영역내에, 상기 필드산화막의 에지와 떨어져 형성된 소스영역(303b)과;상기 필드산화막(301b) 상면 및 상기 필드산화막(301b)과 맞닿아 있는 상기 웰(310) 상면에 걸쳐서 형성된 게이트 전극(302)과;상기 필드산화막(301b)의 상면에 형성되고, 그 한쪽 끝은 제1 절연막을 개재하여 상기 게이트 전극(302)의 상부에까지 뻗어 있고, 또다른쪽 끝은 또 필드산화막(301b)의 에지를 덮고 있으며, 상기 액티브 영역의 상면을 소정부분 덮도록 형성된 필드 플레이트(306)와;상기 필드 플레이트(306)와, 상기 게이트 전극(302)을 덮고 있고 상기 소스(303b) 및 드레인 영역(303a)에서 콘택홀(307)이 형성되어 있는 제2절연막과;상기 콘택홀(303)내에 형성된 소스 전극(308b) 및 드레인 전극(308a)으로 구성되는 고전압 반도체 소자.
- 제1항에 있어서, 상기 필드 플레이트(306)는 도핑된 폴리실리콘 또는 금속으로 된 도전층인 것을 특징으로 하는 고전압 반도체 소자.
- 제1도전형의 반도체 기판(500)내에 제2도전형의 웰(520)을 형성하는 공정과;상기 웰(520)내에 제1도전형의 드리프트층(505)을 형성하는 공정과;상기 드리프트층(505)의 상면 일부에 즉 액티브 영역(506b)을 제외한 영역에 필드산화막(506a)을 형성하는 공정과;상기 웰(520)의 상면 및 상기 드리프트층(505)과 상기 웰(520)이 접하는 정션의 상면 및 상기 필드산화막(506a)의 상면에 게이트 전극(508)을 형성하는 공정과;상기 게이트 전극(508)의 상면 및 측면에 제1 절연막(509)을 형성하는 공정과;상기 필드산화막(505)의 에지부를 포함한 상기 필드산화막(505) 상면에 그리고 상기 게이트 전극(508)의 상면에 까지 뻗도록 필드플레이트(510)를 형성하는 공정과;상기 드리프트층(505)내에 상기 필드 플레이트(510)의 에지와 정합하여 드레인(515)을, 그리고 상기 웰(520)내에 게이트 전극(508)의 에지와 정합하여 소스영역(516)을 동시에 형성하는 공정과;상기 드레인(515) 및 소스(516) 형성공정에서 얻어진 전체 구조위에 제2절연막(516)을 형성하는 공정과;상기 소스(516) 및 드레인(515) 영역을 각각 노출시키도록 상기 제2절연막(5160을 식각하여 콘택홀(517)을 형성하는 공정과;상기 콘택홀(517)내에 도전층을 채워 소스전극(518) 및 드레인전극(519)을 형성하는 공정을 포함하는 고전압 반도체 소자의 제조방법.
- 제3항에 있어서, 상기 필드 플레이트(510)를 형성하는 공정은, 필드산화막의 에지부에서 액티브 영역쪽으로 연장되어 상기 액티브 영역의 상면을 소정 부분 덮도록 형성하는 공정인 것을 특징으로 하는 고전압 반도체 소자의 제조방법.
- 제3항에 있어서 상기 소스 및 드레인을 형성하는 공정전에 또는 공정후에, 상기 웰(520)내에 웰에 전압을 인가하기 위한 웰탭졍선을 형성하는 공정을 추가로 포함하는 것을 특징으로 하는 고전압 반도체 소자의 제조방법.
- 제5항에 있어서 상기 웰 탭 정션을 형성하는 공정은 상기 소스영역과 인접하도록 형성하는 것을 특징으로 하는 고전압 반도체 소자의 제조방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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KR1019990020955A KR100302611B1 (ko) | 1999-06-07 | 1999-06-07 | 고전압 반도체 소자 및 그 제조방법 |
US09/588,546 US6448611B1 (en) | 1999-06-07 | 2000-06-06 | High power semiconductor device and fabrication method thereof |
US10/207,996 US6613633B2 (en) | 1999-06-07 | 2002-07-31 | Method for manufacturing a high power semiconductor device having a field plate extendedly disposed on a gate |
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KR1019990020955A KR100302611B1 (ko) | 1999-06-07 | 1999-06-07 | 고전압 반도체 소자 및 그 제조방법 |
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KR20010001608A KR20010001608A (ko) | 2001-01-05 |
KR100302611B1 true KR100302611B1 (ko) | 2001-10-29 |
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KR100249505B1 (ko) * | 1997-10-28 | 2000-03-15 | 정선종 | 수평형 이중 확산 전력 소자의 제조 방법 |
US5918137A (en) * | 1998-04-27 | 1999-06-29 | Spectrian, Inc. | MOS transistor with shield coplanar with gate electrode |
JP3831602B2 (ja) * | 2000-12-07 | 2006-10-11 | 三洋電機株式会社 | 半導体装置の製造方法 |
-
1999
- 1999-06-07 KR KR1019990020955A patent/KR100302611B1/ko not_active IP Right Cessation
-
2000
- 2000-06-06 US US09/588,546 patent/US6448611B1/en not_active Expired - Lifetime
-
2002
- 2002-07-31 US US10/207,996 patent/US6613633B2/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7935992B2 (en) | 2007-12-03 | 2011-05-03 | Samsung Electronics Co., Ltd. | Transistor, display driver integrated circuit including a transistor, and a method of fabricating a transistor |
US8039905B2 (en) | 2008-03-12 | 2011-10-18 | Samsung Electronics Co., Ltd. | Semiconductor device |
US8652928B2 (en) | 2008-03-12 | 2014-02-18 | Samsung Electronics Co., Ltd. | Method of manufacturing a semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
US6613633B2 (en) | 2003-09-02 |
US20020182810A1 (en) | 2002-12-05 |
US6448611B1 (en) | 2002-09-10 |
KR20010001608A (ko) | 2001-01-05 |
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