TWI311813B - Field effect transistor and method of manufacturing same - Google Patents
Field effect transistor and method of manufacturing same Download PDFInfo
- Publication number
- TWI311813B TWI311813B TW092118872A TW92118872A TWI311813B TW I311813 B TWI311813 B TW I311813B TW 092118872 A TW092118872 A TW 092118872A TW 92118872 A TW92118872 A TW 92118872A TW I311813 B TWI311813 B TW I311813B
- Authority
- TW
- Taiwan
- Prior art keywords
- distance
- semiconductor substrate
- segment
- section
- conductive
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 64
- 238000000034 method Methods 0.000 claims description 42
- 230000000694 effects Effects 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 230000008901 benefit Effects 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000010276 construction Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000005457 optimization Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003389 potentiating effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- HPQRSQFZILKRDH-UHFFFAOYSA-M chloro(trimethyl)plumbane Chemical compound C[Pb](C)(C)Cl HPQRSQFZILKRDH-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003090 exacerbative effect Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910021653 sulphate ion Inorganic materials 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/112—Field plates comprising multiple field plate segments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs
- H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/209,816 US6870219B2 (en) | 2002-07-31 | 2002-07-31 | Field effect transistor and method of manufacturing same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200409359A TW200409359A (en) | 2004-06-01 |
| TWI311813B true TWI311813B (en) | 2009-07-01 |
Family
ID=31187146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092118872A TWI311813B (en) | 2002-07-31 | 2003-07-10 | Field effect transistor and method of manufacturing same |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6870219B2 (enExample) |
| EP (1) | EP1525622A2 (enExample) |
| JP (1) | JP2005535113A (enExample) |
| CN (1) | CN1672263A (enExample) |
| AU (1) | AU2003281740A1 (enExample) |
| TW (1) | TWI311813B (enExample) |
| WO (1) | WO2004012270A2 (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1618607B1 (en) * | 2003-04-22 | 2012-07-25 | DSP Group Switzerland AG | Semiconductor device comprising an ldmos field-effect transistor and method of operating the same |
| EP1661186A2 (en) * | 2003-08-27 | 2006-05-31 | Koninklijke Philips Electronics N.V. | Electronic device comprising an ldmos transistor |
| US7501669B2 (en) | 2003-09-09 | 2009-03-10 | Cree, Inc. | Wide bandgap transistor devices with field plates |
| US20070057289A1 (en) | 2004-01-10 | 2007-03-15 | Davies Robert B | Power semiconductor device and method therefor |
| US9773877B2 (en) * | 2004-05-13 | 2017-09-26 | Cree, Inc. | Wide bandgap field effect transistors with source connected field plates |
| EP1635399B1 (en) * | 2004-09-08 | 2011-05-04 | STMicroelectronics Srl | Lateral MOS device and method of making the same |
| US8530963B2 (en) | 2005-01-06 | 2013-09-10 | Estivation Properties Llc | Power semiconductor device and method therefor |
| US11791385B2 (en) * | 2005-03-11 | 2023-10-17 | Wolfspeed, Inc. | Wide bandgap transistors with gate-source field plates |
| US8283699B2 (en) | 2006-11-13 | 2012-10-09 | Cree, Inc. | GaN based HEMTs with buried field plates |
| US8564057B1 (en) * | 2007-01-09 | 2013-10-22 | Maxpower Semiconductor, Inc. | Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield |
| JP2009164651A (ja) * | 2009-04-24 | 2009-07-23 | Sanyo Electric Co Ltd | 半導体装置 |
| US8253198B2 (en) * | 2009-07-30 | 2012-08-28 | Micron Technology | Devices for shielding a signal line over an active region |
| CN102237276B (zh) * | 2010-04-22 | 2014-04-16 | 上海华虹宏力半导体制造有限公司 | 射频ldmos器件的制造方法 |
| EP2383786B1 (en) * | 2010-04-29 | 2018-08-15 | Ampleon Netherlands B.V. | Semiconductor transistor comprising two electrically conductive shield elements |
| JP2011249728A (ja) * | 2010-05-31 | 2011-12-08 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
| US20120175679A1 (en) * | 2011-01-10 | 2012-07-12 | Fabio Alessio Marino | Single structure cascode device |
| JP5776217B2 (ja) * | 2011-02-24 | 2015-09-09 | 富士通株式会社 | 化合物半導体装置 |
| US8680615B2 (en) | 2011-12-13 | 2014-03-25 | Freescale Semiconductor, Inc. | Customized shield plate for a field effect transistor |
| US9755059B2 (en) | 2013-06-09 | 2017-09-05 | Cree, Inc. | Cascode structures with GaN cap layers |
| US9679981B2 (en) | 2013-06-09 | 2017-06-13 | Cree, Inc. | Cascode structures for GaN HEMTs |
| JP6242118B2 (ja) * | 2013-08-29 | 2017-12-06 | オリンパス株式会社 | スイッチ回路、サンプルホールド回路、および固体撮像装置 |
| US9853145B1 (en) * | 2016-10-04 | 2017-12-26 | Vanguard International Semiconductor Corporation | High-voltage semiconductor device and method of manufacturing the same |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56169368A (en) * | 1980-05-30 | 1981-12-26 | Sharp Corp | High withstand voltage mos field effect semiconductor device |
| JPS56169369A (en) * | 1980-05-30 | 1981-12-26 | Sharp Corp | High withstand voltage mos field effect semiconductor device |
| JPS58137256A (ja) | 1982-02-10 | 1983-08-15 | Hitachi Ltd | 絶縁ゲ−ト半導体装置 |
| US5119149A (en) | 1990-10-22 | 1992-06-02 | Motorola, Inc. | Gate-drain shield reduces gate to drain capacitance |
| US5252848A (en) | 1992-02-03 | 1993-10-12 | Motorola, Inc. | Low on resistance field effect transistor |
| US5898198A (en) | 1997-08-04 | 1999-04-27 | Spectrian | RF power device having voltage controlled linearity |
| US5912490A (en) * | 1997-08-04 | 1999-06-15 | Spectrian | MOSFET having buried shield plate for reduced gate/drain capacitance |
| US6001710A (en) | 1998-03-30 | 1999-12-14 | Spectrian, Inc. | MOSFET device having recessed gate-drain shield and method |
| US6222229B1 (en) | 1999-02-18 | 2001-04-24 | Cree, Inc. | Self-aligned shield structure for realizing high frequency power MOSFET devices with improved reliability |
| KR100282426B1 (ko) * | 1999-03-17 | 2001-02-15 | 김영환 | 스마트 파워 소자 및 그의 제조 방법 |
| KR100302611B1 (ko) * | 1999-06-07 | 2001-10-29 | 김영환 | 고전압 반도체 소자 및 그 제조방법 |
-
2002
- 2002-07-31 US US10/209,816 patent/US6870219B2/en not_active Expired - Lifetime
-
2003
- 2003-06-16 AU AU2003281740A patent/AU2003281740A1/en not_active Abandoned
- 2003-06-16 JP JP2004524517A patent/JP2005535113A/ja active Pending
- 2003-06-16 WO PCT/US2003/018938 patent/WO2004012270A2/en not_active Ceased
- 2003-06-16 CN CN03817910.5A patent/CN1672263A/zh active Pending
- 2003-06-16 EP EP03742012A patent/EP1525622A2/en not_active Withdrawn
- 2003-07-10 TW TW092118872A patent/TWI311813B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| AU2003281740A1 (en) | 2004-02-16 |
| US20040021175A1 (en) | 2004-02-05 |
| EP1525622A2 (en) | 2005-04-27 |
| TW200409359A (en) | 2004-06-01 |
| US6870219B2 (en) | 2005-03-22 |
| CN1672263A (zh) | 2005-09-21 |
| WO2004012270A3 (en) | 2004-04-15 |
| WO2004012270A2 (en) | 2004-02-05 |
| JP2005535113A (ja) | 2005-11-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |