JP2005535113A - 電界効果トランジスタとその製造方法 - Google Patents

電界効果トランジスタとその製造方法 Download PDF

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Publication number
JP2005535113A
JP2005535113A JP2004524517A JP2004524517A JP2005535113A JP 2005535113 A JP2005535113 A JP 2005535113A JP 2004524517 A JP2004524517 A JP 2004524517A JP 2004524517 A JP2004524517 A JP 2004524517A JP 2005535113 A JP2005535113 A JP 2005535113A
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Japan
Prior art keywords
shield structure
conductive shield
semiconductor substrate
effect transistor
field effect
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Pending
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JP2004524517A
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English (en)
Japanese (ja)
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JP2005535113A5 (enExample
Inventor
ブレック、ヘルムート
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NXP USA Inc
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NXP USA Inc
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Publication date
Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of JP2005535113A publication Critical patent/JP2005535113A/ja
Publication of JP2005535113A5 publication Critical patent/JP2005535113A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
JP2004524517A 2002-07-31 2003-06-16 電界効果トランジスタとその製造方法 Pending JP2005535113A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/209,816 US6870219B2 (en) 2002-07-31 2002-07-31 Field effect transistor and method of manufacturing same
PCT/US2003/018938 WO2004012270A2 (en) 2002-07-31 2003-06-16 Field effect transistor and method of manufacturing same

Publications (2)

Publication Number Publication Date
JP2005535113A true JP2005535113A (ja) 2005-11-17
JP2005535113A5 JP2005535113A5 (enExample) 2006-08-10

Family

ID=31187146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004524517A Pending JP2005535113A (ja) 2002-07-31 2003-06-16 電界効果トランジスタとその製造方法

Country Status (7)

Country Link
US (1) US6870219B2 (enExample)
EP (1) EP1525622A2 (enExample)
JP (1) JP2005535113A (enExample)
CN (1) CN1672263A (enExample)
AU (1) AU2003281740A1 (enExample)
TW (1) TWI311813B (enExample)
WO (1) WO2004012270A2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007537596A (ja) * 2004-05-13 2007-12-20 クリー　インコーポレイテッド フィールドプレートに接続されたソース領域を有する、ワイドバンドギャップ電界効果トランジスタ
JP2009164651A (ja) * 2009-04-24 2009-07-23 Sanyo Electric Co Ltd 半導体装置
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
US11791385B2 (en) 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates

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EP1618607B1 (en) * 2003-04-22 2012-07-25 DSP Group Switzerland AG Semiconductor device comprising an ldmos field-effect transistor and method of operating the same
EP1661186A2 (en) * 2003-08-27 2006-05-31 Koninklijke Philips Electronics N.V. Electronic device comprising an ldmos transistor
US7501669B2 (en) 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
US20070057289A1 (en) 2004-01-10 2007-03-15 Davies Robert B Power semiconductor device and method therefor
EP1635399B1 (en) * 2004-09-08 2011-05-04 STMicroelectronics Srl Lateral MOS device and method of making the same
US8530963B2 (en) 2005-01-06 2013-09-10 Estivation Properties Llc Power semiconductor device and method therefor
US8283699B2 (en) 2006-11-13 2012-10-09 Cree, Inc. GaN based HEMTs with buried field plates
US8564057B1 (en) * 2007-01-09 2013-10-22 Maxpower Semiconductor, Inc. Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield
US8253198B2 (en) * 2009-07-30 2012-08-28 Micron Technology Devices for shielding a signal line over an active region
CN102237276B (zh) * 2010-04-22 2014-04-16 上海华虹宏力半导体制造有限公司 射频ldmos器件的制造方法
EP2383786B1 (en) * 2010-04-29 2018-08-15 Ampleon Netherlands B.V. Semiconductor transistor comprising two electrically conductive shield elements
JP2011249728A (ja) * 2010-05-31 2011-12-08 Toshiba Corp 半導体装置および半導体装置の製造方法
US20120175679A1 (en) * 2011-01-10 2012-07-12 Fabio Alessio Marino Single structure cascode device
JP5776217B2 (ja) * 2011-02-24 2015-09-09 富士通株式会社 化合物半導体装置
US8680615B2 (en) 2011-12-13 2014-03-25 Freescale Semiconductor, Inc. Customized shield plate for a field effect transistor
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
JP6242118B2 (ja) * 2013-08-29 2017-12-06 オリンパス株式会社 スイッチ回路、サンプルホールド回路、および固体撮像装置
US9853145B1 (en) * 2016-10-04 2017-12-26 Vanguard International Semiconductor Corporation High-voltage semiconductor device and method of manufacturing the same

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JPS56169368A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPS56169369A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPS58137256A (ja) 1982-02-10 1983-08-15 Hitachi Ltd 絶縁ゲ−ト半導体装置
US5119149A (en) 1990-10-22 1992-06-02 Motorola, Inc. Gate-drain shield reduces gate to drain capacitance
US5252848A (en) 1992-02-03 1993-10-12 Motorola, Inc. Low on resistance field effect transistor
US5898198A (en) 1997-08-04 1999-04-27 Spectrian RF power device having voltage controlled linearity
US5912490A (en) * 1997-08-04 1999-06-15 Spectrian MOSFET having buried shield plate for reduced gate/drain capacitance
US6001710A (en) 1998-03-30 1999-12-14 Spectrian, Inc. MOSFET device having recessed gate-drain shield and method
US6222229B1 (en) 1999-02-18 2001-04-24 Cree, Inc. Self-aligned shield structure for realizing high frequency power MOSFET devices with improved reliability
KR100282426B1 (ko) * 1999-03-17 2001-02-15 김영환 스마트 파워 소자 및 그의 제조 방법
KR100302611B1 (ko) * 1999-06-07 2001-10-29 김영환 고전압 반도체 소자 및 그 제조방법

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JPN6010001807, Ｎ．Ｆｕｊｉｓｈｉｍａ ｅｔ ａｌ．, "Ａ ７００Ｖ Ｌａｔｅｒａｌ Ｐｏｗｅｒ ＭＯＳＦＥＴ ｗｉｔｈ Ｎａｒｒｏｗ Ｇａｐ Ｄｏｕｂｌｅ Ｍｅｔａｌ Ｆｉｅｌｄ Ｐｌａｔｅｓ Ｒｅａｌｉｚｉｎｇ Ｌｏｗ Ｏｎ−ｒｅｓｉｓｔａｎｃｅ ａｎ", Ｐｒｏｃｅｅｄｉｎｇ ｏｆ ｔｈｅ １３ｔｈ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｓｙｍｐｏｓｉｕｍ ｏｎ Ｐｏｗｅｒ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｄｅｖｉｃｅｓ ＆ ＩＣｓ, 2001, Ｐ．２５５−２５８ *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007537596A (ja) * 2004-05-13 2007-12-20 クリー　インコーポレイテッド フィールドプレートに接続されたソース領域を有する、ワイドバンドギャップ電界効果トランジスタ
US9773877B2 (en) 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
US11791385B2 (en) 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
JP2009164651A (ja) * 2009-04-24 2009-07-23 Sanyo Electric Co Ltd 半導体装置
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers

Also Published As

Publication number Publication date
AU2003281740A1 (en) 2004-02-16
US20040021175A1 (en) 2004-02-05
EP1525622A2 (en) 2005-04-27
TW200409359A (en) 2004-06-01
US6870219B2 (en) 2005-03-22
CN1672263A (zh) 2005-09-21
TWI311813B (en) 2009-07-01
WO2004012270A3 (en) 2004-04-15
WO2004012270A2 (en) 2004-02-05

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