CN1672263A - 场效应晶体管及其制造方法 - Google Patents

场效应晶体管及其制造方法 Download PDF

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Publication number
CN1672263A
CN1672263A CN03817910.5A CN03817910A CN1672263A CN 1672263 A CN1672263 A CN 1672263A CN 03817910 A CN03817910 A CN 03817910A CN 1672263 A CN1672263 A CN 1672263A
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CN
China
Prior art keywords
electrically conductive
shield structure
conductive shield
semiconductor substrate
distance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN03817910.5A
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English (en)
Chinese (zh)
Inventor
赫尔穆特·布雷克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of CN1672263A publication Critical patent/CN1672263A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
CN03817910.5A 2002-07-31 2003-06-16 场效应晶体管及其制造方法 Pending CN1672263A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/209,816 US6870219B2 (en) 2002-07-31 2002-07-31 Field effect transistor and method of manufacturing same
US10/209,816 2002-07-31

Publications (1)

Publication Number Publication Date
CN1672263A true CN1672263A (zh) 2005-09-21

Family

ID=31187146

Family Applications (1)

Application Number Title Priority Date Filing Date
CN03817910.5A Pending CN1672263A (zh) 2002-07-31 2003-06-16 场效应晶体管及其制造方法

Country Status (7)

Country Link
US (1) US6870219B2 (enExample)
EP (1) EP1525622A2 (enExample)
JP (1) JP2005535113A (enExample)
CN (1) CN1672263A (enExample)
AU (1) AU2003281740A1 (enExample)
TW (1) TWI311813B (enExample)
WO (1) WO2004012270A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102237410A (zh) * 2010-04-29 2011-11-09 Nxp股份有限公司 包括两个导电屏蔽元件的半导体晶体管
CN102237276A (zh) * 2010-04-22 2011-11-09 上海华虹Nec电子有限公司 射频ldmos器件的制造方法
CN105308954A (zh) * 2013-08-29 2016-02-03 奥林巴斯株式会社 开关电路、采样保持电路以及固体摄像装置

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Publication number Priority date Publication date Assignee Title
EP1618607B1 (en) * 2003-04-22 2012-07-25 DSP Group Switzerland AG Semiconductor device comprising an ldmos field-effect transistor and method of operating the same
EP1661186A2 (en) * 2003-08-27 2006-05-31 Koninklijke Philips Electronics N.V. Electronic device comprising an ldmos transistor
US7501669B2 (en) 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
US20070057289A1 (en) 2004-01-10 2007-03-15 Davies Robert B Power semiconductor device and method therefor
US9773877B2 (en) * 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
EP1635399B1 (en) * 2004-09-08 2011-05-04 STMicroelectronics Srl Lateral MOS device and method of making the same
US8530963B2 (en) 2005-01-06 2013-09-10 Estivation Properties Llc Power semiconductor device and method therefor
US11791385B2 (en) * 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
US8283699B2 (en) 2006-11-13 2012-10-09 Cree, Inc. GaN based HEMTs with buried field plates
US8564057B1 (en) * 2007-01-09 2013-10-22 Maxpower Semiconductor, Inc. Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield
JP2009164651A (ja) * 2009-04-24 2009-07-23 Sanyo Electric Co Ltd 半導体装置
US8253198B2 (en) * 2009-07-30 2012-08-28 Micron Technology Devices for shielding a signal line over an active region
JP2011249728A (ja) * 2010-05-31 2011-12-08 Toshiba Corp 半導体装置および半導体装置の製造方法
US20120175679A1 (en) * 2011-01-10 2012-07-12 Fabio Alessio Marino Single structure cascode device
JP5776217B2 (ja) * 2011-02-24 2015-09-09 富士通株式会社 化合物半導体装置
US8680615B2 (en) 2011-12-13 2014-03-25 Freescale Semiconductor, Inc. Customized shield plate for a field effect transistor
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
US9853145B1 (en) * 2016-10-04 2017-12-26 Vanguard International Semiconductor Corporation High-voltage semiconductor device and method of manufacturing the same

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JPS56169368A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPS56169369A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPS58137256A (ja) 1982-02-10 1983-08-15 Hitachi Ltd 絶縁ゲ−ト半導体装置
US5119149A (en) 1990-10-22 1992-06-02 Motorola, Inc. Gate-drain shield reduces gate to drain capacitance
US5252848A (en) 1992-02-03 1993-10-12 Motorola, Inc. Low on resistance field effect transistor
US5898198A (en) 1997-08-04 1999-04-27 Spectrian RF power device having voltage controlled linearity
US5912490A (en) * 1997-08-04 1999-06-15 Spectrian MOSFET having buried shield plate for reduced gate/drain capacitance
US6001710A (en) 1998-03-30 1999-12-14 Spectrian, Inc. MOSFET device having recessed gate-drain shield and method
US6222229B1 (en) 1999-02-18 2001-04-24 Cree, Inc. Self-aligned shield structure for realizing high frequency power MOSFET devices with improved reliability
KR100282426B1 (ko) * 1999-03-17 2001-02-15 김영환 스마트 파워 소자 및 그의 제조 방법
KR100302611B1 (ko) * 1999-06-07 2001-10-29 김영환 고전압 반도체 소자 및 그 제조방법

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102237276A (zh) * 2010-04-22 2011-11-09 上海华虹Nec电子有限公司 射频ldmos器件的制造方法
CN102237276B (zh) * 2010-04-22 2014-04-16 上海华虹宏力半导体制造有限公司 射频ldmos器件的制造方法
CN102237410A (zh) * 2010-04-29 2011-11-09 Nxp股份有限公司 包括两个导电屏蔽元件的半导体晶体管
US8502311B2 (en) 2010-04-29 2013-08-06 Nxp B.V. Semiconductor transistor comprising two electrically conductive shield elements
CN102237410B (zh) * 2010-04-29 2014-10-22 Nxp股份有限公司 包括两个导电屏蔽元件的半导体晶体管
CN105308954A (zh) * 2013-08-29 2016-02-03 奥林巴斯株式会社 开关电路、采样保持电路以及固体摄像装置
CN105308954B (zh) * 2013-08-29 2018-09-07 奥林巴斯株式会社 开关电路、采样保持电路以及固体摄像装置

Also Published As

Publication number Publication date
AU2003281740A1 (en) 2004-02-16
US20040021175A1 (en) 2004-02-05
EP1525622A2 (en) 2005-04-27
TW200409359A (en) 2004-06-01
US6870219B2 (en) 2005-03-22
TWI311813B (en) 2009-07-01
WO2004012270A3 (en) 2004-04-15
WO2004012270A2 (en) 2004-02-05
JP2005535113A (ja) 2005-11-17

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